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Ono Yukinori  小野 行徳

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ONO Yukinori  小野 行徳

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Researcher Number 80374073
Other IDs
Affiliation (Current) 2025: 静岡大学, 電子工学研究所, 教授
Affiliation (based on the past Project Information) *help 2015 – 2024: 静岡大学, 電子工学研究所, 教授
2013 – 2016: 富山大学, 大学院理工学研究部(工学), 教授
2015: 富山大学, 大学院理工学研究科, 教授
2014 – 2015: 富山大学, その他の研究科, 教授
2014: 富山大学, 理工学研究部(工学), 教授 … More
2013 – 2014: 富山大学, 大学院理工学研究部, 教授
2012: 富山大学, 大学院・工学研究部, 教授
2012: 富山大学, 大学院・理工学研究部, 教授
2012: 富山大学, 理工学教育部, 教授
2012: 富山大学, 理工学研究部, 教授
2011: NTT物性科学基礎研究所, 量子電子物性研究部, 主幹研究員
2009 – 2011: NTT Basic Research Laboratories, 量子電子物性研究部, 主幹研究員
2006 – 2008: NTT, 物性科学基礎研究所, 主任研究員
2004 – 2008: 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 主任研究員
2007: NTT, 物性科学基礎研究所, 研究員
2005: NTT物性科学基礎研究所, 主任研究員
2004: NTT, 物性科学基礎研究所, 主任研究員 Less
Review Section/Research Field
Principal Investigator
Electron device/Electronic equipment / Medium-sized Section 21:Electrical and electronic engineering and related fields / Electrical and electronic engineering and related fields / Nanostructural physics / Microdevices/Nanodevices
Except Principal Investigator
Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related / Nanostructural physics / Nanostructural science / Science and Engineering
Keywords
Principal Investigator
シリコン / MOSトランジスタ / エネルギー消費 / 単一ドーパント / 電子流体 / エネルギー散逸 / フォノン / ドーパント / 単一電子 / 電子スピン共鳴 … More / ドナー / チャージポンピング / 平坦バンド / 2次元超格子 / 超流動 / 超伝導 / 電子電子散乱 / 電子正孔2重層 / クーロンドラッグ / 金属絶縁体転移 / 電子流体効果 / 熱電変換 / 電子・電子散乱 / トランジスタ / 単一フォノン / シリコン酸化膜界面 / single-electron turnstile / acceptor / dopant / single electron / donor / 単電子ターンスタイル / アクセプタ / ドーパントエンジニアリング / 少数電子デバイス / マイクロナノデバイス / 電子デバイス・機器 / トンネル効果 / 局在準位 / 振動分光 / 再結合過程 / 電気的読み出しスピン共鳴 / 非弾性トンネル分光 / 不純物原子 / 電子正孔再結合 / 単一電子転送 / ナノ物性制御 / マイクロ・ナノデバイス / ナノ・マイクロ科学 / 単一電子制御 / シングルドーパント … More
Except Principal Investigator
シリコン / 電子デバイス・機器 / 電子スピン共鳴 / 界面欠陥 / MOSFET / EDMR / ドーパント原子 / トンネル現象 / 量子ドット / マイクロ・ナノデバイス / 少数電子素子 / ランダム・テレグラフ・ノイズ / シリコンMOSトランジスタ / ゲートパルス / 凝縮現象 / ゲート制御 / 電子正孔系 / 励起子 / 再結合 / 電子正孔共存系 / シリコンMOSFET / 不純物原子 / EDMR法 / 半導体物性 / 電子捕獲過程 / 局在準位 / シリコントランジスタ / 電子スピン共鳴法 / チャージポンピング法 / 量子準位 / 表面・界面物性 / 電子デバイス・電子機器 / 抵抗変化メモリ / 量子情報処理デバイス / フレキシブルデバイス / 揺らぎ許容デバイス / 省エネルギーデバイス / 先端機能デバイス / 抵抗変化素子 / 接合ダイオード / トランジスタ / ナノデバイス / シングルドーパント / シュタルク効果 / ELスペクトル / 不純物準位 / IV族半導体 / 谷分離効果 / ELスペクトル / 第一原理計算 / ナノキャパシタ / 誘電率 / IV族半導体 / ナノ構造 / ナノ構造物性 / シリコンナノデバイス / 電子・電気材料 / マルチドット / 単電子デバイス / 走査プローブ顕微鏡 Less
  • Research Projects

    (19 results)
  • Research Products

    (411 results)
  • Co-Researchers

    (22 People)
  •  高感度電子スピン共鳴法の開発とこれを用いたナノMOSトランジスタのRTN欠陥解析

    • Principal Investigator
      堀 匡寛
    • Project Period (FY)
      2024 – 2026
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Shizuoka University
  •  Hydro-electronics based on Si MOS structurePrincipal Investigator

    • Principal Investigator
      小野 行徳
    • Project Period (FY)
      2024 – 2027
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      Shizuoka University
  •  Superconductivity based on Si MOS structurePrincipal Investigator

    • Principal Investigator
      小野 行徳
    • Project Period (FY)
      2022 – 2026
    • Research Category
      Grant-in-Aid for Challenging Research (Pioneering)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      Shizuoka University
  •  Research on emerging devices based on electron-hydrodynamic effectsPrincipal Investigator

    • Principal Investigator
      Ono Yukinori
    • Project Period (FY)
      2020 – 2023
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      Shizuoka University
  •  Electrical control of electron-hole coexisting system at silicon transistors

    • Principal Investigator
      HORI Masahiro
    • Project Period (FY)
      2020 – 2023
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Shizuoka University
  •  Development of high-speed electron-lattice energy-conversion method for future electronicsPrincipal Investigator

    • Principal Investigator
      ONO YUKINORI
    • Project Period (FY)
      2017 – 2021
    • Research Category
      Grant-in-Aid for Challenging Research (Pioneering)
    • Research Field
      Electrical and electronic engineering and related fields
    • Research Institution
      Shizuoka University
  •  Single phonon control by dopant atoms in siliconPrincipal Investigator

    • Principal Investigator
      ONO YUKINORI
    • Project Period (FY)
      2016 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Shizuoka University
  •  Development of sensitive charge-pumping spin-resonance method and its application to spin control in electron-pair recombination processPrincipal Investigator

    • Principal Investigator
      ONO YUKINORI
    • Project Period (FY)
      2015 – 2016
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Shizuoka University
      University of Toyama
  •  Development of detection and characterization techniques of single traps and innovative progress of trap physics

    • Principal Investigator
      Tsuchiya Toshiaki
    • Project Period (FY)
      2014 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Shimane University
  •  Research on high-precision charge transfer using dopant atoms in siliconPrincipal Investigator

    • Principal Investigator
      Ono Yukinori
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Toyama
  •  Research on single-atom inelastic tunneling spectroscopy and atomic scale energy transferPrincipal Investigator

    • Principal Investigator
      ONO Yukinori
    • Project Period (FY)
      2013 – 2014
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Nanostructural physics
    • Research Institution
      University of Toyama
  •  Control of magnetic property in dopant lattice

    • Principal Investigator
      Hori Masahiro
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Young Scientists (A)
    • Research Field
      Nanostructural physics
    • Research Institution
      Shizuoka University
      University of Toyama
  •  Multi-input and multi-output flexible nanodot-array devices operating with multiple valued ReRAM

    • Principal Investigator
      TAKAHASHI Yasuo
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Hokkaido University
  •  Development of dopant atom devices based on silicon nanostructures

    • Principal Investigator
      Tabe Michiharu
    • Project Period (FY)
      2011 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Shizuoka University
  •  Control of dielectric function by making nano-scale structure of IV-group semiconductor

    • Principal Investigator
      KAGESHIMA Hiroyuki
    • Project Period (FY)
      2010 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Nanostructural science
    • Research Institution
      NTT Basic Research Laboratories
  •  Silicon Single-Dopant ElectronicsPrincipal Investigator

    • Principal Investigator
      ONO Yukinori
    • Project Period (FY)
      2008 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Microdevices/Nanodevices
    • Research Institution
      NTT Basic Research Laboratories
  •  Nanoscale-multiple-junctions : Transport control and development of new functions

    • Principal Investigator
      TABE Michiharu
    • Project Period (FY)
      2006 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Shizuoka University
  •  Silicon single-electron devices : Time-space control of transport and development of new functions

    • Principal Investigator
      TABE Michiharu
    • Project Period (FY)
      2004 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Shizuoka University
  •  Control of single electrons using bonor levels in siliconPrincipal Investigator

    • Principal Investigator
      ONO Yukinori
    • Project Period (FY)
      2004 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      NTT Basic Research Laboratories

All 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 Other

All Journal Article Presentation Book Patent

  • [Book] Silicon Single-Electron Devices, in" Device Applications of Silicon Nanocrystals and Nanostructures eds2009

    • Author(s)
      Y. Takahashi, Y. Ono, A. Fujiwara, K. Nishiguchi, and H. Inokaw, N. Koshida
    • Publisher
      Springer
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Book] Device Applications of Silicon Nanocrystals and Nanostructures(Silicon Single-Electron Devices)2009

    • Author(s)
      Y.Takahashi, Y.Ono, A.Fujiwara, K.Nishiguchi, H.Inokawa
    • Publisher
      Springer
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Book] Single-electron transistor and its logic application, in "Information Technology II(volume 4) of Nanotechnology"2008

    • Author(s)
      Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi and A. Fujiwara
    • Publisher
      Wiley-VCH Verlag
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Book] Information Technology II (volume 4) of Nanotechnology2008

    • Author(s)
      Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, A. Fujiwara
    • Total Pages
      23
    • Publisher
      Wiley-VCH Verlag
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Book] Information Technology II (volume 4) of Nanotechnology(Single-electron transistor and its logic application)2008

    • Author(s)
      Y.Ono, K.Nishiguchi, H.Inokawa, Y.Takahashi, A.Fujiwara
    • Publisher
      Wiley-VCH Verlag
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces2023

    • Author(s)
      Masahiro Hori, Jinya Kume, Manjakavahoaka Razanoelina, Hiroyuki Kageshima, Yukinori Ono
    • Journal Title

      Communications Physics

      Volume: 6 Issue: 1

    • DOI

      10.1038/s42005-023-01428-1

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-22K18294, KAKENHI-PROJECT-20H00241, KAKENHI-PROJECT-20H02203
  • [Journal Article] Highly stable Fe/CeO2 catalyst for the reverse water gas shift reaction in the presence of H2S2023

    • Author(s)
      Watanabe Ryo, Karasawa Fumiya, Yokoyama Chikamasa, Oshima Kazumasa, Kishida Masahiro, Hori Masahiro, Ono Yukinori, Satokawa Shigeo, Verma Priyanka, Fukuhara Choji
    • Journal Title

      RSC Advances

      Volume: 13 Issue: 17 Pages: 11525-11529

    • DOI

      10.1039/d3ra01323e

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22K21326, KAKENHI-PROJECT-22K18294, KAKENHI-PROJECT-20H00241, KAKENHI-PROJECT-20H02203
  • [Journal Article] Magnetometry of neurons using a superconducting qubit2023

    • Author(s)
      Hiraku Toida, Koji Sakai, Tetsuhiko F. Teshima, Masahiro Hori, Kosuke Kakuyanagi, Imran Mahboob, Yukinori Ono & Shiro Saito
    • Journal Title

      Communications Physics

      Volume: 6 Issue: 1

    • DOI

      10.1038/s42005-023-01133-z

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-22K18294, KAKENHI-PROJECT-20H00241, KAKENHI-PROJECT-20H02203
  • [Journal Article] Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors2022

    • Author(s)
      T. Teja. Jupalli, A. Debnath, G. Prabhudesai, K. Yamaguchi, P. Jeevan Kumar, Y. Ono, D. Moraru
    • Journal Title

      Applied Physics Express

      Volume: 15 Issue: 6 Pages: 065003-065003

    • DOI

      10.35848/1882-0786/ac68cf

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22K04216, KAKENHI-PROJECT-22K18294, KAKENHI-PROJECT-20H00241
  • [Journal Article] Critical conductance of two-dimensional electron gas in silicon-on-insulator metal-oxide-semiconductor field-effect transistor2021

    • Author(s)
      M. Razanoelina, M. Hori, A. Fujiwara, Y. Ono
    • Journal Title

      Applied Physics Express

      Volume: 14 Issue: 10 Pages: 104003-104003

    • DOI

      10.35848/1882-0786/ac25c4

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20K20289, KAKENHI-PROJECT-18H05258, KAKENHI-PROJECT-20H00241, KAKENHI-PROJECT-20H02203
  • [Journal Article] Detection of arsenic donor electrons using gate-pulse-induced spin-dependent recombination in silicon transistors2021

    • Author(s)
      M. Hori, Y. Ono
    • Journal Title

      Applied Physics Letters

      Volume: 118 Issue: 26

    • DOI

      10.1063/5.0053196

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20K20289, KAKENHI-PROJECT-20H00241, KAKENHI-PROJECT-20H02203
  • [Journal Article] Single-charge band-to-band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes2019

    • Author(s)
      G. Prabhudesai, M. Muruganathan, L. T. Anh, H. Mizuta, M. Hori, Y. Ono, M. Tabe, D. Moraru
    • Journal Title

      Appl. Phys. Lett.

      Volume: 114 Issue: 24

    • DOI

      10.1063/1.5100342

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04529, KAKENHI-PROJECT-16H02339, KAKENHI-PROJECT-20K20289, KAKENHI-PROJECT-16H06087
  • [Journal Article] Charge pumping under spin resonance in Si(100) metal-oxide-semiconductor transistors2019

    • Author(s)
      M. Hori, Y. Ono
    • Journal Title

      Physical Review Applied

      Volume: 11 Issue: 6

    • DOI

      10.1103/physrevapplied.11.064064

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H02339, KAKENHI-PROJECT-20K20289, KAKENHI-PROJECT-16H06087
  • [Journal Article] Coulomb-blockade transport in selectively-doped Si nano-transistors2019

    • Author(s)
      A. Afiff, A. Samanta, A. Udhiarto, H. Sudibyo, M. Hori, Y. Ono, M. Tabe, D. Moraru
    • Journal Title

      Appl. Phys. Express

      Volume: 12 Issue: 8 Pages: 085004-085004

    • DOI

      10.7567/1882-0786/ab2cd7

    • NAID

      210000156539

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04529, KAKENHI-PROJECT-16H02339, KAKENHI-PROJECT-20K20289, KAKENHI-PROJECT-16H06087
  • [Journal Article] Detection of single holes generated by impact ionization in silicon2018

    • Author(s)
      Firdaus Himma、Watanabe Tokinobu、Hori Masahiro、Moraru Daniel、Takahashi Yasuo、Fujiwara Akira、Ono Yukinori
    • Journal Title

      Applied Physics Letters

      Volume: 113 Issue: 16 Pages: 163103-163103

    • DOI

      10.1063/1.5046865

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18H05258, KAKENHI-PROJECT-15H01706, KAKENHI-PROJECT-16H02339, KAKENHI-PROJECT-16H06087, KAKENHI-PROJECT-20K20289
  • [Journal Article] Detection and Characterization of Single Near-Interface Oxide Traps with the Charge Pumping Method2018

    • Author(s)
      T. Tsuchiya, M. Hori, Y. Ono
    • Journal Title

      Proceedings of 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

      Volume: - Pages: 1-4

    • DOI

      10.1109/ipfa.2018.8452495

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H02339, KAKENHI-PROJECT-16H06087, KAKENHI-PROJECT-20K20289
  • [Journal Article] Electron aspirator using electron-electron scattering in nanoscale silicon2018

    • Author(s)
      Firdaus Himma、Watanabe Tokinobu、Hori Masahiro、Moraru Daniel、Takahashi Yasuo、Fujiwara Akira、Ono Yukinori
    • Journal Title

      Nature Communications

      Volume: 9 Issue: 1 Pages: 48131-48131

    • DOI

      10.1038/s41467-018-07278-8

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-18H05258, KAKENHI-PROJECT-16H02339, KAKENHI-PROJECT-16H06087, KAKENHI-PROJECT-20K20289
  • [Journal Article] Time-domain charge pumping on silicon-on-indulator MOS devices2017

    • Author(s)
      T.Watanabe, M.Hori, T.Tsuchiya, A.Fujiwara, Y.Ono
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 56 Issue: 1 Pages: 011303-011303

    • DOI

      10.7567/jjap.56.011303

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H02339, KAKENHI-PROJECT-26289105, KAKENHI-PROJECT-15K13970
  • [Journal Article] Manipulation of single charges using dopant atoms in silicon-Interplay with intervalley phonon emission-2017

    • Author(s)
      Y.Ono, M.Hori, G.P.Lansbergen, A.Fujiwara
    • Journal Title

      Springer Advances in intelligent system and computing

      Volume: 519 Pages: 137-141

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Journal Article] Real-time Monitoring of Charge-pumping Process for SiO2/Si Interface Analysis2017

    • Author(s)
      M. Hori, T. Watanabe and Y. Ono
    • Journal Title

      Intl. Symp. Elec. and Com. Eng

      Volume: - Pages: 52-56

    • DOI

      10.1109/qir.2017.8168450

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H02339, KAKENHI-PROJECT-16H06087, KAKENHI-PROJECT-20K20289
  • [Journal Article] EDMR on recombination process in silicon MOSFETs at room temperature2017

    • Author(s)
      M.Hori, Y.Ono
    • Journal Title

      Springer Advances in intelligent system and computing

      Volume: 519 Pages: 89-93

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Journal Article] Manipulation of Single Charges Using Dopant Atoms in Silicon - Interplay with Intervalley Phonon Emission2017

    • Author(s)
      Y. Ono, M. Hori, G. P. Lansbergen, A. Fujiwara
    • Journal Title

      Springer Series Advances in Intelligent Systems and Computing, Recent Global Research and Education :Technological Challenges

      Volume: 519 Pages: 137-141

    • DOI

      10.1007/978-3-319-46490-9_20

    • ISBN
      9783319464893, 9783319464909
    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-16H06087, KAKENHI-PROJECT-15K13970
  • [Journal Article] Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal-oxide-semiconductor field-effect transistor2017

    • Author(s)
      M.Hori, T.Tsuchiya, Y.Ono
    • Journal Title

      Appl. Phys. Express

      Volume: 10 Issue: 1 Pages: 015701-015701

    • DOI

      10.7567/apex.10.015701

    • NAID

      210000135738

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H02339, KAKENHI-PROJECT-16H06087, KAKENHI-PROJECT-26289105, KAKENHI-PROJECT-15K13970
  • [Journal Article] Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors2017

    • Author(s)
      A.Samanta, M.Muruganathan, M.Hori, Y.Ono, H.Mizuta, M.Tabe, D.Moraru
    • Journal Title

      Appl.Phys.Lett.

      Volume: 110 Issue: 9

    • DOI

      10.1063/1.4977836

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H02339, KAKENHI-PROJECT-16H06087, KAKENHI-PROJECT-15K13970
  • [Journal Article] EDMR on Recombination Process in Silicon MOSFET at Room Temperature2017

    • Author(s)
      M. Hori, Y. Ono
    • Journal Title

      Springer Series Advances in Intelligent Systems and Computing, Recent Global Research and Education :Technological Challenges

      Volume: 519 Pages: 89-93

    • DOI

      10.1007/978-3-319-46490-9_13

    • ISBN
      9783319464893, 9783319464909
    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-16H06087, KAKENHI-PROJECT-15K13970
  • [Journal Article] Electrical activation and electron spin resonance measurements of arsenic implanted in silicon2015

    • Author(s)
      M. Hori, M. Uematsu, A. Fujiwara, Y. Ono
    • Journal Title

      Applied Physics Letters

      Volume: 106 Issue: 14

    • DOI

      10.1063/1.4917295

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25600015, KAKENHI-PROJECT-15K13970, KAKENHI-PROJECT-25289098, KAKENHI-PROJECT-25706003
  • [Journal Article] Fabrication and single-electron-transfer operation of a triple-dot single-electron transistor2015

    • Author(s)
      M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi
    • Journal Title

      J. Appl. Phys.

      Volume: 118 Issue: 21

    • DOI

      10.1063/1.4936790

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13970, KAKENHI-PROJECT-15J01747, KAKENHI-PROJECT-26630141, KAKENHI-PROJECT-25286068, KAKENHI-PROJECT-25289098
  • [Journal Article] Charge pumping current from single Si/SiO2 interface traps: Direct observation of Pb centers and fundamental trap-counting by the charge pumping method2015

    • Author(s)
      T. Tsuchiya, Y. Ono
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 4S Pages: 04DC01-04DC01

    • DOI

      10.7567/jjap.54.04dc01

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25289098
  • [Journal Article] Evaluation of Accuracy of Charge Pumping Current in Time Domain2015

    • Author(s)
      T. Watanabe, M. Hori, T. Tsuchiya, Y. Ono
    • Journal Title

      IEICE Trans. Electron.

      Volume: E98.C Issue: 5 Pages: 390-394

    • DOI

      10.1587/transele.E98.C.390

    • NAID

      130005067742

    • ISSN
      0916-8524, 1745-1353
    • Language
      English
    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15K13970, KAKENHI-PROJECT-25289098, KAKENHI-PROJECT-26289105, KAKENHI-PROJECT-25706003
  • [Journal Article] Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method2015

    • Author(s)
      Toshiaki Tsuchiya, Yukinori Ono
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 54(4S)

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-26289105
  • [Journal Article] Evaluation of accuracy of charge pumping current in time domain2015

    • Author(s)
      T. Watanabe, M. Hori T. Tsuchiya, Y. Ono
    • Journal Title

      IEICE Trans. Electron.

      Volume: Vol. E98-C, No. 5 Pages: 390-394

    • NAID

      130005067742

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Journal Article] Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current2015

    • Author(s)
      M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono
    • Journal Title

      Applied Physics Letters

      Volume: 106 Issue: 4

    • DOI

      10.1063/1.4906997

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24360128, KAKENHI-PROJECT-25289098, KAKENHI-PROJECT-25600015, KAKENHI-PROJECT-25706003, KAKENHI-PROJECT-26289105
  • [Journal Article] Single-electron thermal noise2014

    • Author(s)
      K. Nishiguchi, Y. Ono, A. Fujiwara
    • Journal Title

      Nanotechnology

      Volume: 25 Issue: 27 Pages: 275201-275201

    • DOI

      10.1088/0957-4484/25/27/275201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360128
  • [Journal Article] Analysis of electron capture process in charge pumping sequence using time domain measurements2014

    • Author(s)
      M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono
    • Journal Title

      Applied Physics Letters

      Volume: 105 Issue: 26

    • DOI

      10.1063/1.4905032

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24360128, KAKENHI-PROJECT-25289098, KAKENHI-PROJECT-25600015, KAKENHI-PROJECT-25706003, KAKENHI-PROJECT-26289105
  • [Journal Article] Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting2013

    • Author(s)
      Y. Niida, K. Takashina, Y. Ono, A. Fujiwara, Y. Hirayama
    • Journal Title

      Appllied Physics Letters

      Volume: 102 Issue: 19

    • DOI

      10.1063/1.4803014

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360128, KAKENHI-PROJECT-25289098, KAKENHI-PROJECT-25600015
  • [Journal Article] Electron spin resonance study on pure single crystalline sapphire2013

    • Author(s)
      M. Hori, N. Fukumoto, Y. Ono, R. Chikaoka, S. Moriwaki, N. Mio
    • Journal Title

      Phys. Status Solidi C

      Volume: 10 Issue: 12 Pages: 1681-1683

    • DOI

      10.1002/pssc.201300321

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360128, KAKENHI-PROJECT-25600015, KAKENHI-PROJECT-25706003
  • [Journal Article] X-ray and photoluminescence properties of Sm3+ doped barium sulfide2012

    • Author(s)
      Maeda, K., Kawaida, N.,Tsudome, R., Sakai, K., Ikari, T..
    • Journal Title

      Physica Status Solidi (C)

      Volume: 9(12) Issue: 12 Pages: 93-96

    • DOI

      10.1002/pssc.201200321

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560024, KAKENHI-PROJECT-25289098
  • [Journal Article] Donor-Based Single Electron Pumps with Tunable Donor Binding Energy2012

    • Author(s)
      G. P. Lansbergen, Y. Ono, A. Fujiwara
    • Journal Title

      Nano Letters

      Volume: Vol.12 Pages: 763-768

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Electrical measurements of terphenyl-based molecular devices2011

    • Author(s)
      T. Goto, H. Inokawa, Y. Ono, A. Fujiwara, K. Torimitsu
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: Vol.50, No.7

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors2011

    • Author(s)
      J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara
    • Journal Title

      Appl. Phys. Lett.

      Volume: Vol. 98 Issue: 11

    • DOI

      10.1063/1.3360224

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22310062
  • [Journal Article] Enhancing secondary electron detection efficiency by applying a substrate bias voltage for deterministic single-ion Doping2011

    • Author(s)
      M. Hori, T. Shinada, K. Taira, A. Komatsubara, Y. Ono, T. Tanii, T. Endoh, I. Ohdomari
    • Journal Title

      Appl. Phys. Express

      Volume: Vol.4, No.3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors2011

    • Author(s)
      J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, A. Fujiwara
    • Journal Title

      Appl. Phys. Lett

      Volume: Vol.98, No.3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Carrier transport in indium-doped p-channel silicon-on-insulator transistors doped with indium between 30 to 285 K2011

    • Author(s)
      M. A. H. Khalafalla, Y. Ono, J. Noborisaka, G. P. Lansbergen, A. Fujiwara
    • Journal Title

      J. Appl. Phys

      Volume: Vol.110, No.19

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors2011

    • Author(s)
      Jin-ichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, Akira Fujiwara
    • Journal Title

      Appl.Phys.Lett.

      Volume: 98

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22310062
  • [Journal Article] Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors2011

    • Author(s)
      M. Hori, T. Shinada, Y. Ono, A. Komatsubara, K. Kumagai, T. Tanii, T. Endoh, I. Ohdomari
    • Journal Title

      Appl. Phys. Lett

      Volume: Vol.99, No.6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Bound exciton photoluminescence from ion-implanted phosphorus in thin silicon layers2011

    • Author(s)
      H. Sumikura, K. Nishiguchi, Y. Ono, A. Fujiwara, M. Notomi
    • Journal Title

      Optics Express

      Volume: Vol.19, No.25 Pages: 2525-2562

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Single-electron counting statistics of shot noise in nanowire Si MOSFETs2011

    • Author(s)
      K. Nishiguchi, Y. Ono, A. Fujiwara
    • Journal Title

      Appl. Phys. Lett

      Volume: Vol.98, No.19

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Significance of the interface regarding magnetic properties of Mn-nanosilicide in silicon2011

    • Author(s)
      Y. Ono, Y. Miyazaki, S. Yabuuchi, H. Kageshima, M. Nagase, A. Fujiwara, E. Ohta
    • Journal Title

      Thin Solid Films

      Volume: Vol.519, No.24 Pages: 8505-8508

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor-field-effect transistors2011

    • Author(s)
      J.Noborisaka, K.Nishiguchi, Y.Ono, H.Kageshima, A.Fujiwara
    • Journal Title

      Appl.Phys.Lett. Vol.98

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon2011

    • Author(s)
      Y.Ono
    • Journal Title

      Thin Solid Films

      Volume: Vol.519 Issue: 24 Pages: 8505-8508

    • DOI

      10.1016/j.tsf.2011.05.027

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Single-electron transport through single dopants in a dopant-rich environment Phys2010

    • Author(s)
      M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono, T. Mizuno
    • Journal Title

      Rev. Lett

      Volume: Vol.105, No.1

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors2010

    • Author(s)
      J. Noborisaka, K. Nishiguchi, H. Kageshima, Y. Ono, A. Fujiwara
    • Journal Title

      Appl. Phys. Lett

      Volume: Vol.96, No.11

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Single-electron transport through single dopants in a dopant-rich environment2010

    • Author(s)
      M.Tabe, D.Moraru, M.Ligowski, M.Anwar,R.Jablonski, Y.Ono, T.Mizuno
    • Journal Title

      Phys.Rev.Lett. Vol.105

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Resonant escape over an oscillating barrier in a single-electron ratchet transfer2010

    • Author(s)
      S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, A. Fujiwara
    • Journal Title

      Phys. Rev. B

      Volume: Vol.82, No.3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Electrons and holes in a 40nm thick silicon slab at cryogenic temperatures2009

    • Author(s)
      K.Takashina, K.Nishiguchi, Y.Ono, A.Fujiwara, T.Fujisawa, Y.Hirayama, K.Muraki
    • Journal Title

      Applied Physics Letters Vol.94

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors2009

    • Author(s)
      M.A.H.Khalafalla, Y.Ono, K.Nishiguchi, A.Fujiwara
    • Journal Title

      Appl.Phys.Lett. Vol.94

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors2009

    • Author(s)
      M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, A. Fujiwara
    • Journal Title

      Appl. Phys. Lett

      Volume: Vol.94, No.22

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Electrons and holes in a 40nm thick silicon slab at cryogenic temperatures2009

    • Author(s)
      K. Takashina, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, Y. Hirayama, K. Muraki
    • Journal Title

      Appl. Phys. Lett

      Volume: Vol.94, No.14

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors2009

    • Author(s)
      M.A.H.Khalafalla, Y.Ono, K.Nishiguchi, A.Fujiwara
    • Journal Title

      Applied Physics Letters Vol.94

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] First-principles study on origin of ferromagnetism of MnSil. 7 nanoparticles in Si2008

    • Author(s)
      S. Yabuuchi, H. Kageshima, Y. Ono, M. Nagase, A. Fujiwara, E. Ohta
    • Journal Title

      Phys. Rev. Vol.B78

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Silicon single-charge transfer devices2008

    • Author(s)
      Y. Ono, A. Fujiwara, K. Nishiguchi, Y. Takahashi, and H. Inokawa
    • Journal Title

      J. Phys. Chem. Solids 69

      Pages: 702-707

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Ferromagnetism of manganese-silicide nanopariticles in Silicon2008

    • Author(s)
      S. Yabuuchi, Y. Ono, H. Kageshima, M. Nagase, A. Fujiwara, E. Ohta
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: Vol.47, No.6 Pages: 4487-4450

    • NAID

      40016110965

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] A gate-defined silicon quantum dot molecule2008

    • Author(s)
      H. W. Liu, T. Fujisawa, H. Inokawa, Y. Ono, A. Fujiwara, Y. Hirayama
    • Journal Title

      Appl. Phys. Lett

      Volume: Vol.92, No.22

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] A gate-defined silicon quantum dot molecule2008

    • Author(s)
      H. W. Liu, T. Fujisawa, H. Inokawa, Y. Ono, A. Fujiwara, Y. Hirayama
    • Journal Title

      Appl. Phys. Lett. Vol.92

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor2008

    • Author(s)
      A. Fujiwara, K. Nishiguchi, and Y. Ono
    • Journal Title

      Appl. Phys. Lett. 92

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Stochastic data processing circuit based on single electrons using nano field-effect transistors2008

    • Author(s)
      K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi
    • Journal Title

      Appl. Phys. Lett. 92

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Single-electron-resolution electrometer based on field-effect transistor2008

    • Author(s)
      K. Nishiguchi, C. Koechlin, Y. Ono, A. Fujiwara, H. Inokawa, H. Yamaguchi
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: Vol.47, No.11 Pages: 8305-8310

    • NAID

      40016346937

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metaloxide-semiconductor field-effect transistor2008

    • Author(s)
      S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, A. Fujiwara
    • Journal Title

      Appl. Phys. Lett. Vol.93

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Charge transport in boron-doped nano MOSFETs : Towards single-dopant electronics2008

    • Author(s)
      Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, A. Fujiwara, S. Horiguchi, H. Inokawa, Y. Takahashi
    • Journal Title

      Appl. Sur. Sci

      Volume: Vol.254, No.19 Pages: 6252-6256

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Single-Electron-Resolution Electrometer Based on Field-Effect Transistor2008

    • Author(s)
      2. K. Nishiguchi, C. Koechlin, Y. Ono, A. Fujiwara, H. Inokawa, H. Yamaguchi
    • Journal Title

      Jpn. J. Appl. Phys. Vol.47

      Pages: 8305-8310

    • NAID

      40016346937

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Ferromagnetism of manganese-silicide nanopariticles in Silicon2008

    • Author(s)
      S. Yabuuchi, Y. Ono, H. Kageshima, M. Nagase, A. Fujiwara, E. Ohta
    • Journal Title

      Jpn. J. Appl. Phys. Vol.47

      Pages: 4487-4450

    • NAID

      40016110965

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Pauli-spin-blockade transport through a silicon double quantum dot2008

    • Author(s)
      H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and Y. Hirayama
    • Journal Title

      Phys. Rev. B 77

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] First-principles study on origin of ferromagnetism of MnSi1. 7 nanoparticles in Si2008

    • Author(s)
      S. Yabuuchi, H. Kageshima, Y. Ono, M. Nagase, A. Fujiwara, E. Ohta
    • Journal Title

      Phys. Rev. B

      Volume: Vol.78, No.4

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller(better) than in metal-based ones : Two-level fluctuator stability2008

    • Author(s)
      N. M. Zimmerman, W. H. Huber, B. Simonds, E. Hourdakis, A. Fujiwara, Y. Ono, Y. Takahashi, H. Inokawa, M. Furlan, M. W. Keller
    • Journal Title

      J. Appl. Phys

      Volume: Vol.104, No.

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Silicon single-charge transfer devices2008

    • Author(s)
      Y. Ono
    • Journal Title

      J. Phys. Chem. Solids 69

      Pages: 702-707

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] First-principles study on origin of ferromagnetism of MnSi1.7 nanoparticles in Si2008

    • Author(s)
      S.Yabuuchi, H.Kageshima, Y.Ono, M.Nagase, A.Fujiwara, E.Ohta
    • Journal Title

      Phys.Rev.B Vol.78

    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Silicon single-charge transfer devices2008

    • Author(s)
      Y.Ono
    • Journal Title

      J.Phys.Chem.Solids 69

      Pages: 702-707

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor2008

    • Author(s)
      S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, A. Fujiwara
    • Journal Title

      Appl. Phys. Lett.

      Volume: Vol.93, No.22

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Charge transport in boron-doped nano MOSFETs : Towards single-dopant electronics2008

    • Author(s)
      Y. Ono, M. Khalafalla, K. Nishiguchi, K. Takashina, A. Fujiwara, S. Horiguchi, H. Inokawa, Y. Takahashi
    • Journal Title

      Appl. Sur. Science Vol.254

      Pages: 6252-6256

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Journal Article] Transfer and detection of single electrons using metal-oxide-semiconductor field-effect-transistors2007

    • Author(s)
      W. C. Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, and N. J. Wu
    • Journal Title

      IEICE Trans. Electron. E-90C

      Pages: 943-948

    • NAID

      110007519656

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Low-Temperature Characteristics of Ambipolar SiO_2/Si/SiO_2 Hall-Bar Devices2007

    • Author(s)
      K. Takashina, B. Gaillaed, Y. Ono, and Y. Hirayama
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 2596-2598

    • NAID

      10022546885

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Conductance modulation by individual acceptors in Si nanoscale field-effect transistors2007

    • Author(s)
      Yukinori Ono
    • Journal Title

      Applied Physics Letters vol.90 No.10

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Infrared detection with silicon nano field-effect transistor2007

    • Author(s)
      K. Nishiguch, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi
    • Journal Title

      Appl. Phys. Lett. 90

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Quantized electron transfer through random multiple tunnel junctions in phosphorous-doped silicon nanowires2007

    • Author(s)
      D. Moraru, Y. Ono, H. Inokawa, H. Ikeda, and M. Tabe
    • Journal Title

      Phys. Rev. B 76

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Impact of space-energy correlation on variable-range hopping in transistors2007

    • Author(s)
      J.-F. Morizur, Y. Ono, H. Kageshima, H. Inokawa, and H. Yamaguchi
    • Journal Title

      Phys. Rev. Letts. 98

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Conductance modulation by individual acceptors in Si nanoscale field-effect transistors2007

    • Author(s)
      Yukinori Ono
    • Journal Title

      Applied Physics Ltters Vol.90, No.10

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Quantized electron transfer through random multiple tunnel junctions in phosphorous-doped silicon nanowires2007

    • Author(s)
      D. Moraru, Y. Ono, H. Inokawa and M. Tabe
    • Journal Title

      Phys. Rev. B Vol.76, no.7

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063010
  • [Journal Article] Quantized electron transfer through random multiple tunnel junctions in phosphorousdoped silicon nanowires2007

    • Author(s)
      D. Moraru, Y. Ono, H. Inokawa, M. Tabe
    • Journal Title

      Physical Review B Vol.76,no.7

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063010
  • [Journal Article] Quantized electron transfer through random multiple tunnel junctions in phosphorous-doped silicon nanowires2007

    • Author(s)
      D. Moraru, Y. Ono, H. Inokawa and M. Tabe
    • Journal Title

      Phys. Rev. B Vol.76, no.7

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106006
  • [Journal Article] Identification of single and coupled acceptors in silicon nano field-effect transistors2007

    • Author(s)
      M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, and A. Fujiwara
    • Journal Title

      Appl. Phys. Lett. 91

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Conductance modulation by individual acceptors in Si nanoscale field-effect transistors2007

    • Author(s)
      Yukinori Ono
    • Journal Title

      Applied Physics Letters Vol. 90, No. 10

    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices2007

    • Author(s)
      T. Goto, H. Inokawa, M. Nagase, Y. Ono, K. Sumitomo, and K. Torimitsu
    • Journal Title

      Jpn. J. Appl. Phys. 46

      Pages: 1731-1733

    • NAID

      10022547152

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Anomalous resistance ridges along filling factor v=4i2007

    • Author(s)
      K. Takashima, M. Brun, T. Ota, D. K. Maude, A. Fujiwara, Y. Ono, Y. Takahashi, and Y. Hirayama
    • Journal Title

      Phys. Rev. Letts. 99

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K2006

    • Author(s)
      Yukinori Ono
    • Journal Title

      Physical Review B Vol.74,No.23

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K2006

    • Author(s)
      Yukinori Ono
    • Journal Title

      Physical Review B Vol. 74, No. 23

    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K2006

    • Author(s)
      Yukinori Ono
    • Journal Title

      Physical Review B Vol.74, No.23

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Charge-state control of phosphorus donors in silocon-on-insulator Metal-oxide-semiconductor field-effect transistors2005

    • Author(s)
      Yukinori Ono
    • Journal Title

      Japanese Journal of Applied Physics Vol.44, No.4B

      Pages: 2588-2591

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Charge-state control of phosphorus donors in silicon-on-insulator metal- oxide- semiconductor field-effect transistors2005

    • Author(s)
      Yukinori Ono
    • Journal Title

      Japanese Journal of Applied Physics Vol.44,No.4B

      Pages: 2588-2591

    • NAID

      10015704970

    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Manipulation and detection of single electrons for future information processing2005

    • Author(s)
      Y. Ono
    • Journal Title

      Applied Physics Letters Vol.97, No.3

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Manipulation and detection of single electrons for future information processing2005

    • Author(s)
      Y.Ono
    • Journal Title

      Applied Physics Letters Vol.97,No.3

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Manipulation and detection of single electrons for future information processing2005

    • Author(s)
      Y.Ono, A.Fujiwara, K.Nishiguchi, H.Inokawa, Y.Takahashi
    • Journal Title

      Applied Physics Letters Vol.97, No.3

    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Charge-state control of phosphorus donors in silocon-on-insulator Metal-oxide-semiconductor field-effect transistors2005

    • Author(s)
      Yukinori Ono
    • Journal Title

      Japanese Journal of Applied Physics Vol.44,No.4B

      Pages: 2588-2591

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Charge-state control of phosphorus donors in silicon-on-insulator metal-oxide-semiconductor field-effect transistors2005

    • Author(s)
      Y.Ono, K.Nishiguchi, H.Inokawa, S.Horiguchi, Y.Takahashi
    • Journal Title

      Japanese Journal of Applied Physics Vol.44, No.4B(to be published)

    • NAID

      10015704970

    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices2004

    • Author(s)
      N.M.Zimmerman, E.Hourdakis, Y.Ono, A.Fujiwara, Y.Takahashi
    • Journal Title

      Journal of Applied Physics Vol.96, No.9

      Pages: 5254-5266

    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Real-time observation of single-electron movement through silicon single-electron transistor2004

    • Author(s)
      S.-J Kim, Y.Ono, Y.Takahashi, J.B.Choi
    • Journal Title

      Japanese Journal of Applied Physics Vol.43, No.10

      Pages: 6863-6867

    • NAID

      10013744830

    • Data Source
      KAKENHI-PROJECT-16206038
  • [Journal Article] Multilevel memory using an electrically formed single-electron box2004

    • Author(s)
      K.Nishiguchi, H.Inokawa, Y.Ono, A.Fujiwara, Y.Takahashi
    • Journal Title

      Applied Physics Letters Vol.85, No.7

      Pages: 1277-1279

    • Data Source
      KAKENHI-PROJECT-16206038
  • [Patent] 半導体発光素子2011

    • Inventor(s)
      登坂仁一郎、西口克彦、小野行徳、影島博之、藤原聡
    • Industrial Property Rights Holder
      登坂仁一郎、西口克彦、小野行徳、影島博之、藤原聡
    • Industrial Property Number
      2011-051146
    • Filing Date
      2011-03-09
    • Data Source
      KAKENHI-PROJECT-22310062
  • [Patent] 半導体発光素子2011

    • Inventor(s)
      登坂仁一郎, 西口克彦, 小野行徳, 影島博之, 藤原聡
    • Industrial Property Rights Holder
      登坂仁一郎, 西口克彦, 小野行徳, 影島博之, 藤原聡
    • Industrial Property Number
      2011-051146
    • Filing Date
      2011-03-09
    • Data Source
      KAKENHI-PROJECT-22310062
  • [Patent] 半導体装置2004

    • Inventor(s)
      小野 行徳, 他二名
    • Industrial Property Rights Holder
      NTT
    • Industrial Property Number
      2004-238091
    • Filing Date
      2004-08-18
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Patent] 半導体装置2004

    • Inventor(s)
      小野 行徳, 西口 克彦, 猪川 洋
    • Industrial Property Rights Holder
      NTT
    • Industrial Property Number
      2004-238091
    • Filing Date
      2004-08-18
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (11) - 捕獲電子の再結合課程(Ⅳ) -2024

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] シリコンMOS界面における電子正孔共存系の形成2024

    • Author(s)
      堀匡寛, 小野行徳
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (10) -捕獲電子の再結合過程(Ⅲ)-2024

    • Author(s)
      土屋 敏章、堀 匡寛、小野 行徳
    • Organizer
      2024年 第71回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (11) -捕獲電子の再結合過程(Ⅳ)-2024

    • Author(s)
      土屋 敏章、堀 匡寛、小野 行徳
    • Organizer
      2024年 第71回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (10) - 捕獲電子の再結合課程(Ⅲ) -2024

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] シリコンMOS界面における電子正孔共存系の形成2024

    • Author(s)
      堀 匡寛、小野 行徳
    • Organizer
      2024年 第71回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] Electrical formation of electron-hole bilayer system in Si MOS transistors2023

    • Author(s)
      Masahiro Hori, Jinya Kume, Yukinori Ono
    • Organizer
      2023 International conference on solid state devices and materials (SSDM2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (8) - 捕獲電子の再結合課程(Ⅰ) -2023

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] Silicon Electron Nano-Aspirator - Current enhancement based on electron-electron scattering -2023

    • Author(s)
      Yukinori Ono
    • Organizer
      Silicon Nanoelectronics Workshop 2023 (SNW 2023)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] シリコンMOS界面における電子正孔共存系の形成2023

    • Author(s)
      堀匡寛, 小野行徳
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] 超伝導磁束量子ビットによる神経細胞の磁化測定2023

    • Author(s)
      樋田啓, 酒井洸児, 手島哲彦, 堀匡寛, 角柳孝輔, Imran Mahboob, 小野行徳, 齊藤志郎
    • Organizer
      2023年 日本物理学会 春季大会
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] MOS界面の単一欠陥チャージポンピンによって可能となった両性準位における電子捕獲素過程の直接観測 (6) -欠陥構造緩和(Ⅱ)-2023

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2023年 第70回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (10) - 捕獲電子の再結合課程(Ⅲ) -2023

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (8) - 捕獲電子の再結合課程(Ⅰ) -2023

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] Drag of Electron-Hole Bilayer in Silicon-on-Insulator at Low Temperature2023

    • Author(s)
      Ahmed Nabil, Manjakavahoaka Razanoelina, Masahiro Hori, Akira Fujiwara, Yukinori Ono
    • Organizer
      Silicon Nanoelectronics Workshop 2023 (SNW 2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (9) - 捕獲電子の再結合課程(Ⅱ) -2023

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] 超伝導磁束量子ビットによるシリコン中ビスマス不純物の磁化測定2023

    • Author(s)
      樋田 啓、角柳 孝輔、Leonid V. Abdurakhimov、堀 匡寛、小野 行徳、齊藤 志郎
    • Organizer
      日本物理学会 第78回年次大会(2023年)
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] 超伝導磁束量子ビットによる神経細胞の磁化測定2023

    • Author(s)
      樋田啓, 酒井洸児, 手島哲彦, 堀匡寛, 角柳孝輔, Imran Mahboob, 小野行徳, 齊藤志郎
    • Organizer
      2023年 日本物理学会 春季大会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (11) - 捕獲電子の再結合課程(Ⅳ) -2023

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] Electrical formation of electron-hole bilayer system in Si MOS transistors2023

    • Author(s)
      Masahiro Hori, Jinya Kume, Yukinori Ono
    • Organizer
      2023 International Conference on Solid State Devices and Materials (SSDM2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] Silicon Electron Nano-Aspirator - Current enhancement based on electron-electron scattering -2023

    • Author(s)
      Yukinori Ono
    • Organizer
      Silicon Nanoelectronics Workshop 2023 (SNW 2023)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (8) -捕獲電子の再結合過程(I)-2023

    • Author(s)
      土屋 敏章、堀 匡寛、小野 行徳
    • Organizer
      2023年 第84回 応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] 超伝導磁束量子ビットによる神経細胞の磁化測定2023

    • Author(s)
      樋田啓, 酒井洸児, 手島哲彦, 堀匡寛, 角柳孝輔, Imran Mahboob, 小野行徳, 齊藤志郎
    • Organizer
      2023年 日本物理学会 春季大会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] シリコンMOS構造における電子流体の観測と低消費電力デバイス応用2023

    • Author(s)
      小野行徳
    • Organizer
      第1回研究会「エネルギーの高効率利用を考える革新的システムナノ技術」
    • Invited
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (7) - τDに関する考察 -2023

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2023年 第70回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (7) - τDに関する考察 -2023

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2023年 第70回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (9) - 捕獲電子の再結合課程(Ⅱ) -2023

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] Drag of Electron-Hole Bilayer in Silicon-on-Insulator at Low Temperature2023

    • Author(s)
      Ahmed Nabil, Manjakavahoaka Razanoelina, Masahiro Hori, Akira Fujiwara, Yukinori Ono
    • Organizer
      Silicon Nanoelectronics Workshop 2023 (SNW 2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] Electrical formation of electron-hole bilayer system in Si MOS transistors2023

    • Author(s)
      Masahiro Hori, Jinya Kume, Yukinori Ono
    • Organizer
      2023 International conference on solid state devices and materials (SSDM2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] Drag of Electron-Hole Bilayer in Silicon-on-Insulator at Low Temperature2023

    • Author(s)
      Ahmed Nabil, Manjakavahoaka Razanoelina, Masahiro Hori, Akira Fujiwara, Yukinori Ono
    • Organizer
      Silicon Nanoelectronics Workshop 2023 (SNW 2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (9) -捕獲電子の再結合過程(Ⅱ)-2023

    • Author(s)
      土屋 敏章、堀 匡寛、小野 行徳
    • Organizer
      2023年 第84回 応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (7) - τDに関する考察 -2023

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2023年 第70回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] シリコンMOS構造における電子流体の観測と低消費電力デバイス応用2023

    • Author(s)
      小野行徳
    • Organizer
      第1回研究会「エネルギーの高効率利用を考える革新的システムナノ技術」
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] MOS界面の単一欠陥チャージポンピンによって可能となった両性準位における電子捕獲素過程の直接観測 (6) -欠陥構造緩和(Ⅱ)-2023

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2023年 第70回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] シリコンMOS構造における電子流体の観測と低消費電力デバイス応用2023

    • Author(s)
      小野行徳
    • Organizer
      共同プロジェクト研究(R02/S01) 先端的コヒーレント波技術の基盤構築とその応用 東北大学-静岡大学合同冬季研究会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] シリコンMOS構造における電子流体の観測と低消費電力デバイス応用2023

    • Author(s)
      小野行徳
    • Organizer
      共同プロジェクト研究(R02/S01) 先端的コヒーレント波技術の基盤構築とその応用 東北大学-静岡大学合同冬季研究会
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] MOS界面の単一欠陥チャージポンピンによって可能となった両性準位における電子捕獲素過程の直接観測 (6) -欠陥構造緩和(Ⅱ)-2023

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2023年 第70回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測(1)-両性準位のDOS-2022

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (5) -タイプ4と5の識別-2022

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2022年 第83回 応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (5) -タイプ4と5の識別-2022

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2022年 第83回 応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] Electrical formation of electron-hole coexisting system at Si MOS interfaces2022

    • Author(s)
      Jinya Kume, Yukinori Ono, and Masahiro Hori
    • Organizer
      第24回高柳健次郎記念シンポジウム
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測(3)-ドナー型準位-2022

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Si MOSFETにおける電子スピン共鳴チャージポンピング2022

    • Author(s)
      堀匡寛, 小野行徳
    • Organizer
      東北大学-静岡大学合同冬季研究会 共同プロジェクト研究(R02/S01)先端的コヒーレント波技術の基盤構築とその応用
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] Si MOSFETにおける電子スピン共鳴チャージポンピング2022

    • Author(s)
      堀匡寛, 小野行徳
    • Organizer
      東北大学-静岡大学合同冬季研究会 共同プロジェクト研究(R02/S01)先端的コヒーレント波技術の基盤構築とその応用
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測(3)-ドナー型準位-2022

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (4) -欠陥構造緩和-2022

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2022年 第83回 応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (4) -欠陥構造緩和-2022

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2022年 第83回 応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測(1)-両性準位のDOS-2022

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] Electrical formation of electron-hole coexisting system at Si MOS interfaces2022

    • Author(s)
      Jinya Kume, Yukinori Ono, and Masahiro Hori
    • Organizer
      第24回高柳健次郎記念シンポジウム
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測(2)-アクセプタ型準位-2022

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測(3)-ドナー型準位-2022

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] Control of Electronic Charges and Currents in Nano-scaled Silicon2022

    • Author(s)
      Y. Ono
    • Organizer
      ICTA 2022
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] Control of Electronic Charges and Currents in Nano-scaled Silicon2022

    • Author(s)
      Y. Ono
    • Organizer
      ICTA 2022
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] Si MOSFETにおける電子スピン共鳴チャージポンピング2022

    • Author(s)
      堀匡寛, 小野行徳
    • Organizer
      東北大学-静岡大学合同冬季研究会 共同プロジェクト研究(R02/S01)先端的コヒーレント波技術の基盤構築とその応用
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Electrical formation of electron-hole coexisting system at Si MOS interfaces2022

    • Author(s)
      Jinya Kume, Yukinori Ono, and Masahiro Hori
    • Organizer
      第24回高柳健次郎記念シンポジウム
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (4) -欠陥構造緩和-2022

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2022年 第83回 応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測(1)-両性準位のDOS-2022

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測 (5) -タイプ4と5の識別-2022

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2022年 第83回 応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-22K18294
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測(2)-アクセプタ型準位-2022

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] MOS界面の単一欠陥チャージポンピングによって可能となった両性準位における電子捕獲素過程の直接観測(2)-アクセプタ型準位-2022

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Electron-electron scattering in silicon and its impact on future emerging devices2021

    • Author(s)
      Yukinori Ono
    • Organizer
      6th International Conference on Nanoscience and Nanotechnology(ICONN2021)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] 4端子シリコン・エサキダイオードの作製と低温特性評価2021

    • Author(s)
      金原涼伽, 加藤拓也, 堀匡寛, 小野行徳
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] ナノスケールシリコンにおける電荷と電流の制御2021

    • Author(s)
      小野行徳
    • Organizer
      第23回高柳健次郎記念シンポジウム
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] シリコントランジスタのゲート制御による電子正孔系の形成手法の確立2021

    • Author(s)
      久米仁也, 小野行徳, 堀匡寛
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] シリコンMOSトランジスタにおける電子スピン共鳴下のチャージポンピング2021

    • Author(s)
      堀匡寛, 小野行徳
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] 4端子シリコン・エサキダイオードの作製と低温特性評価2021

    • Author(s)
      金原涼伽, 加藤拓也, 堀匡寛, 小野行徳
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] チャージポンピングEDMRを用いたシリコントランジスタ中のヒ素ドナー電子の検出2021

    • Author(s)
      堀匡寛, 小野行徳
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] チャージポンピングEDMRを用いたシリコントランジスタ中のヒ素ドナー電子の検出2021

    • Author(s)
      堀匡寛, 小野行徳
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] Charge Pumping under Electron Spin Resonance in Si MOSFETs - Identification of Interface Defects and Detection of Donor Electrons -2021

    • Author(s)
      M. Hori, Y. Ono
    • Organizer
      2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (IWDTF 2021)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] ナノスケール・シリコンにおける電子・電子散乱を利用したエレクトロン・アスピレーター2021

    • Author(s)
      小野行徳,フィルダウス ヒンマ, 渡邉時暢, 堀匡寛, モラル ダニエル, 高橋庸夫, 藤原聡
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] Electron aspirator using electron-electron scattering in nanoscale silicon2021

    • Author(s)
      Yukinori Ono
    • Organizer
      東北大学電気通信研究所 令和2年度共同プロジェクト研究発表会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] Charge Pumping under Electron Spin Resonance in Si MOSFETs - Identification of Interface Defects and Detection of Donor Electrons -2021

    • Author(s)
      M. Hori, Y. Ono
    • Organizer
      2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (IWDTF 2021)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] シリコントランジスタのゲート制御による電子正孔系の形成手法の確立2021

    • Author(s)
      久米仁也, 堀匡寛, 小野行徳
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Charge pumping under electron spin resonance in Si MOSFETs-Identification of interface defects and detection of donor electrons-2021

    • Author(s)
      M. Hori, Y. Ono
    • Organizer
      International Workshop on Dielectric Thin Films for Future Electron Devices (2021 IWDTF)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] 4端子シリコン・エサキダイオードの作製と低温特性評価2021

    • Author(s)
      金原涼伽, 加藤拓也, 堀匡寛, 小野行徳
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] Electron aspirator using electron-electron scattering in nanoscale silicon2021

    • Author(s)
      Yukinori Ono
    • Organizer
      東北大学電気通信研究所 令和2年度共同プロジェクト研究発表会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] シリコントランジスタのゲート制御による電子正孔系の形成手法の確立2021

    • Author(s)
      久米仁也, 堀匡寛, 小野行徳
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] ナノスケールシリコンにおける電荷と電流の制御2021

    • Author(s)
      小野行徳
    • Organizer
      第23回高柳健次郎記念シンポジウム
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] チャージポンピングEDMRを用いたシリコントランジスタ中のヒ素ドナー電子の検出2021

    • Author(s)
      堀匡寛, 小野行徳
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] Electron-electron scattering in silicon and its impact on future emerging devices2021

    • Author(s)
      Yukinori Ono
    • Organizer
      6th International Conference on Nanoscience and Nanotechnology(ICONN2021)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00241
  • [Presentation] シリコンMOSトランジスタにおける電子スピン共鳴下のチャージポンピング2020

    • Author(s)
      堀匡寛, 小野行徳
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] チャージポンピング法による単一Pb1センターの検出2020

    • Author(s)
      土屋 敏章, 堀 匡寛, 小野 行徳
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] ナノスケール・シリコンにおける電子・電子散乱を利用したエレクトロン・アスピレーター2020

    • Author(s)
      小野 行徳, ヒンマ フィルダス, 渡邉 時暢, 堀 匡寛, ダニエル モラル, 高橋 庸夫, 藤原 聡
    • Organizer
      第67回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Performance and limitations of Si electron nano-aspirator2020

    • Author(s)
      M. Razanoelina, H. Firdaus, Y. Ono
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Performance and limitations of Si electron nano-aspirator2020

    • Author(s)
      M. Razanoelina, H. Firdaus, Y. Ono
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] シリコンMOSトランジスタにおける電子スピン共鳴下のチャージポンピング2020

    • Author(s)
      堀 匡寛, 小野 行徳
    • Organizer
      第67回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] シリコンMOSトランジスタにおける電子スピン共鳴下のチャージポンピング(再講演)2020

    • Author(s)
      堀 匡寛, 小野 行徳
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] ナノスケール・シリコンにおける電子・電子散乱を利用したエレクトロン・アスピレーター2020

    • Author(s)
      小野 行徳, ヒンマ フィルダス, 渡邉 時暢, 堀 匡寛, ダニエル モラル, 高橋 庸夫, 藤原 聡
    • Organizer
      第67回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] シリコンMOSトランジスタにおける電子スピン共鳴下のチャージポンピング2020

    • Author(s)
      堀 匡寛, 小野 行徳
    • Organizer
      第67回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] チャージポンピング法による単一Pb1センターの検出2020

    • Author(s)
      土屋 敏章, 堀 匡寛, 小野 行徳
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] ナノスケール・シリコンにおける電子・電子散乱を利用したエレクトロン・アスピレーター2020

    • Author(s)
      小野行徳,フィルダウス ヒンマ, 渡邉時暢, 堀匡寛, モラル ダニエル, 高橋庸夫, 藤原聡
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] ナノスケール・シリコンにおける電子・電子散乱を利用したエレクトロン・アスピレーター(再講演)2020

    • Author(s)
      小野 行徳, フィルダス ヒンマ, 渡邉 時暢, 堀 匡寛, モラル ダニエル, 高橋 庸夫, 藤原 聡
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H02203
  • [Presentation] Si Electron Nano-Aspirator towards Emerging Hydro-Electronics2019

    • Author(s)
      M. Razanoelina, H. Firdaus, Y. Takahashi, A. Fujiwara, Y. Ono
    • Organizer
      2019 Silicon Nanoelectronics Workshop
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] 単一 MOS 界面トラップの2電子準位の相関 II -電子捕獲過程-2019

    • Author(s)
      土屋 敏章, 堀 匡寛, 小野 行徳
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Low-Temperature Transport Properties of SOI MOS Transistors2019

    • Author(s)
      K. Zelenska, T. Watanabe, Y. Ono
    • Organizer
      Inter Academia2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Effect of dimensionality on the formation of dopant-induced quantum-dots in heavily doped Si Esaki diodes2019

    • Author(s)
      G.Prabhudesai, M.Manoharan, M.Hori, Y.Ono, H.Mizuta, M.Tabe, D.Moraru
    • Organizer
      2019年 第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Si Electron Nano-Aspirator towards Emerging Hydro-Electronics2019

    • Author(s)
      M. Razanoelina, H. Firdaus, Y. Takahashi, A. Fujiwara, Y. Ono
    • Organizer
      2019 Silicon Nanoelectronics Workshop
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] シリコンMOS界面におけるチャージポンピングEDMR2019

    • Author(s)
      堀匡寛, 土屋敏章, 小野行徳
    • Organizer
      2019年 第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Charge pumping in silicon MOSFETs - towards ultimate control of charges and spins -2019

    • Author(s)
      M. Hori, T. Tsuchiya, Y. Ono
    • Organizer
      8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] 単一 MOS 界面トラップの2電子準位の相関 I -準位密度分布-2019

    • Author(s)
      土屋 敏章, 堀 匡寛, 小野 行徳
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Electron-electron scattering in nano-scaled sillicon2019

    • Author(s)
      Yukinori Ono
    • Organizer
      5th International Conference on Nanoscience and Nanotechnology(ICONN2019)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] シリコンにおける電子-電子散乱を用いたエレクトロン・ナノ・アスピレーター2019

    • Author(s)
      小野 行徳
    • Organizer
      電子情報通信学会 ED・CPM・SDM 共催 平成31年度5月研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Si electron nano-aspirator en-route for energy-efficient hydro-electronic devices2019

    • Author(s)
      M. Razanoelina, H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, Y. Ono
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] シリコンMOS界面におけるチャージポンピングEDMR2019

    • Author(s)
      堀匡寛, 土屋敏章, 小野行徳
    • Organizer
      2019年 第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Electron aspirator using electron-electron scattering in nanoscale silicon2019

    • Author(s)
      H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, Y. Ono
    • Organizer
      The 21st Takayanagi Kenjiro Memorial Symposium
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Electron aspirator using electron-electron scattering in nanoscale silicon2019

    • Author(s)
      H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, Y. Ono
    • Organizer
      The 21st Takayanagi Kenjiro Memorial Symposium
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] シリコンMOS界面のチャージポンピングEDMRにおける信号強度の温度依存性2019

    • Author(s)
      堀 匡寛, 土屋 敏章, 小野 行徳
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Performance Limitations of Nanoscale Si Electron-Aspirator2019

    • Author(s)
      H. Firdaus, M. Razanoelina, Y. Ono
    • Organizer
      Inter-Academia2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Charge pumping EDMR on silicon MOSFETs2019

    • Author(s)
      M. Hori, Y. Ono
    • Organizer
      5th International Conference on Nanoscience and Nanotechnology (ICONN2019)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Electron-electron scattering in nano-scaled sillicon2019

    • Author(s)
      Yukinori Ono
    • Organizer
      5th International Conference on Nanoscience and Nanotechnology(ICONN2019)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Charge pumping in silicon MOSFETs-towards ultimate control of charges and spins -2019

    • Author(s)
      M. Hori, T. Tsuchiya, Y. Ono
    • Organizer
      8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Si electron nano-aspirator en-route for energy-efficient hydro-electronic devices2019

    • Author(s)
      M. Razanoelina, H. Firdaus, T. Watanabe, M. Hori, D. Moraru, Y. Takahashi, A. Fujiwara, Y. Ono
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Effect of dimensionality on the formation of dopant-induced quantum-dots in heavily doped Si Esaki diodes2019

    • Author(s)
      G.Prabhudesai, M.Manoharan, M.Hori, Y.Ono, H.Mizuta, M.Tabe, D.Moraru
    • Organizer
      2019年 第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Performance Limitations of Nanoscale Si Electron-Aspirator2019

    • Author(s)
      H. Firdaus, M. Razanoelina,Y. Ono
    • Organizer
      Inter-Academia2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] シリコンにおける電子-電子散乱を用いたエレクトロン・ナノ・アスピレーター2019

    • Author(s)
      小野 行徳
    • Organizer
      電子情報通信学会 ED・CPM・SDM 共催 平成31年度5月研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] 単一 MOS 界面トラップの2電子準位の相関 II -電子捕獲過程-2019

    • Author(s)
      土屋 敏章, 堀 匡寛, 小野 行徳
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] シリコンMOS界面のチャージポンピングEDMRにおける信号強度の温度依存性2019

    • Author(s)
      堀 匡寛, 土屋 敏章, 小野 行徳
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] 2トラップ間のチャージポンピング相互作用2019

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2019年 第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Low-Temperature Transport Properties of SOI MOS Transistors2019

    • Author(s)
      K. Zelenska, T. Watanabe, Y. Ono
    • Organizer
      Inter Academia2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Charge pumping EDMR on silicon MOSFETs2019

    • Author(s)
      M. Hori, Y. Ono
    • Organizer
      5th International Conference on Nanoscience and Nanotechnology (ICONN)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] 単一 MOS 界面トラップの2電子準位の相関 I -準位密度分布-2019

    • Author(s)
      土屋 敏章, 堀 匡寛, 小野 行徳
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] 2トラップ間のチャージポンピング相互作用2019

    • Author(s)
      土屋敏章, 堀匡寛, 小野行徳
    • Organizer
      2019年 第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] 身近な糖を燃料とするバイオ発電デバイスの開発2018

    • Author(s)
      三宅丈雄、堀匡寛、小野行徳
    • Organizer
      平成29年度生体医歯工学共同研究拠点成果報告会
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] PtHfSi/p-Si(100)ショットキー接合の低温特性2018

    • Author(s)
      渡邉時暢、多胡友、杉浦史悦、堀匡寛、小野行徳、塚本裕也、大見俊一郎
    • Organizer
      平成29年度生体医歯工学共同研究拠点成果報告会
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] チャージポンピングEDMR法を用いたSiO2/Si界面の欠陥検出2018

    • Author(s)
      堀匡寛,小野行徳
    • Organizer
      2018年日本表面真空学会中部支部研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Detection and Characterization of Single Near-Interface Oxide Traps with the Charge Pumping Method2018

    • Author(s)
      T. Tsuchiya, M. Hori, Y. Ono
    • Organizer
      International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] チャージポンピングEDMR法における信号強度の温度異存性評価2018

    • Author(s)
      安藤克哉、堀匡寛、土屋敏章、小野行徳
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] チャージポンピング法によるSi/SiO2界面近傍酸化膜トラップの評価2018

    • Author(s)
      土屋敏章、堀匡寛、小野行徳
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] チャージポンピングEDMR法を用いたシリコン酸化膜界面欠陥の検出2018

    • Author(s)
      堀匡寛、土屋敏章、小野行徳
    • Organizer
      第65回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] チャージポンピングEDMR法を用いたSiO2/Si界面の欠陥検出2018

    • Author(s)
      堀匡寛,小野行徳
    • Organizer
      2018年日本表面真空学会中部支部研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Remote Detection of Holes Generated by Impact Ionization2018

    • Author(s)
      H.Firdaus,M.Hori,Y.Ono
    • Organizer
      17th International Conference on Global Research and Education Inter-Academia 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Silicon-on-insulatorデバイスにおける低温チャージポンピング2018

    • Author(s)
      渡邉時暢、堀匡寛、小野行徳
    • Organizer
      電子情報通信学会 シリコン材料・デバイス研究会
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] チャージポンピング法によるSi/SiO2界面近傍酸化膜トラップの評価2018

    • Author(s)
      土屋敏章、堀匡寛、小野行徳
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] 身近な糖を燃料とするバイオ発電デバイスの開発2018

    • Author(s)
      三宅丈雄、堀匡寛、小野行徳
    • Organizer
      平成29年度生体医歯工学共同研究拠点成果報告会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Remote Detection of Holes Generated by Impact Ionization2018

    • Author(s)
      H.Firdaus,M.Hori,Y.Ono
    • Organizer
      17th International Conference on Global Research and Education Inter-Academia 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] チャージポンピングEDMR法における信号強度の温度異存性評価2018

    • Author(s)
      安藤克哉、堀匡寛、土屋敏章、小野行徳
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] チャージポンピングEDMR法を用いたシリコン酸化膜界面欠陥の検出2018

    • Author(s)
      堀匡寛、土屋敏章、小野行徳
    • Organizer
      第65回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Detection and Characterization of Single Near-Interface Oxide Traps with the Charge Pumping Method2018

    • Author(s)
      T. Tsuchiya, M. Hori, Y. Ono
    • Organizer
      International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] PtHfSi/p-Si(100)ショットキー接合の低温特性2018

    • Author(s)
      渡邉時暢、多胡友、杉浦史悦、堀匡寛、小野行徳、塚本裕也、大見俊一郎
    • Organizer
      平成29年度生体医歯工学共同研究拠点成果報告会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Charge pumping EDMR towards ultimate charge/spin control at room temperature in silicon2017

    • Author(s)
      M.Hori and Y.Ono
    • Organizer
      IV Bilateral Italy-Japan Seminar
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Charge pumping EDMR towards ultimate charge/spin control at room temperature in silicon2017

    • Author(s)
      M.Hori and Y.Ono
    • Organizer
      IV Bilateral Italy-Japan Seminar
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Study of Electron Localization Effects in Donor-Acceptor Pairs in Low-Dimensional Si Tunnel Diodes2017

    • Author(s)
      Prabhudesai Gaurang, Anh Le The, Shibuya Mitsuki, Manoharan Muruganathan, Hori Masahiro, Ono Yukinori, Mizuta Hiroshi, Tabe Michiharu, Moraru Daniel
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Silicon-on-insulatorデバイスにおける低温チャージポンピング2017

    • Author(s)
      渡邉時暢、堀匡寛、小野行徳
    • Organizer
      電子情報通信学会 シリコン材料・デバイス研究会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Silicon-on-insulator MOSデバイスにおける実時間チャージポンピングの応用2017

    • Author(s)
      渡辺時暢,堀 匡寛,土屋敏章,藤原 聡,小野行徳
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜,横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-26289105
  • [Presentation] チャージポンピングEDMR法を用いたシリコン酸化膜界面欠陥の検出2017

    • Author(s)
      堀匡寛、土屋敏章、小野行徳
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] シリコンにおけるチャージポンプー電荷とスピンの室温極限操作に向けてー2017

    • Author(s)
      小野 行徳, 堀匡寛, 土屋敏章
    • Organizer
      第29回シリサイド系半導体研究会
    • Place of Presentation
      八洲学園大学(神奈川県・横浜市)
    • Invited
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Observation of Impact Ionization in Silicon at Low Temperature2017

    • Author(s)
      Y.Ono, H.Firdaus and M.Hori
    • Organizer
      IV Bilateral Italy-Japan Seminar
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Study of Electron Localization Effects in Donor-Acceptor Pairs in Low-Dimensional Si Tunnel Diodes2017

    • Author(s)
      Prabhudesai Gaurang, Anh Le The, Shibuya Mitsuki, Manoharan Muruganathan, Hori Masahiro, Ono Yukinori, Mizuta Hiroshi, Tabe Michiharu, Moraru Daniel
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] SOI MOS p-i-nダイオードの低温チャージポンピング2017

    • Author(s)
      渡邉時暢, 堀匡寛, 小野行徳
    • Organizer
      電子情報通信学会研究会
    • Place of Presentation
      北海道大学(北海道・札幌市)
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Silicon-on-insulator MOS デバイスにおける実時間チャージポンピングの応用2017

    • Author(s)
      渡邉 時暢, 堀 匡寛, 土屋 敏章, 藤原 聡, 小野 行徳
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Charge pump in silicon-Physics and application of charge transfer-2017

    • Author(s)
      Y.Ono
    • Organizer
      16th International Conference on Global Research and Education
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Sensitive Detection of Holes Generated by Impact Lonization in Silicon2017

    • Author(s)
      H.Firdaus,M.Hori, Y.Takahashi, A.Fujiwara and Y.Ono
    • Organizer
      2017 IEEE Silicon Nanoelectronics Workshop
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] Study of Stability of A-few-donor Quantum Dots with Different Configurations for Room-Temperature Single-Electron Tunneling Operation2017

    • Author(s)
      Hasan KM Tarik, Samanta Arup, Affiff Adnan, Anh Le The, Manoharan Muruganathan, Hori Masahiro, Ono Yukinori ,Mizuta Hiroshi,Tabe Michiharu, Moraru Daniel
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Sensitive Detection of Holes Generated by Impact Lonization in Silicon2017

    • Author(s)
      H.Firdaus,M.Hori, Y.Takahashi, A.Fujiwara and Y.Ono
    • Organizer
      2017 Silicon Nanoelectronics Workshop
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Silicon-on-insulator MOS デバイスにおける実時間チャージポンピングの応用2017

    • Author(s)
      渡邉 時暢, 堀 匡寛, 土屋 敏章, 藤原 聡, 小野 行徳
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Charge pump in silicon-Physics and application of charge transfer-2017

    • Author(s)
      Y.Ono
    • Organizer
      16th International Conference on Global Research and Education
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] シリコンにおけるチャージポンプー電荷とスピンの室温極限操作に向けてー2017

    • Author(s)
      小野 行徳, 堀匡寛, 土屋敏章
    • Organizer
      第29回シリサイド系半導体研究会
    • Place of Presentation
      八洲学園大学(神奈川県・横浜市)
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Real-time Monitoring of Charge-pumping Process for SiO2/Si Interface Analysis2017

    • Author(s)
      M.Hori,T.Watanabe and Y.Ono
    • Organizer
      The 15th International Conference on QiR
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K20289
  • [Presentation] チャージポンピングEDMR法を用いたシリコン酸化膜界面欠陥の検出2017

    • Author(s)
      堀匡寛、土屋敏章、小野行徳
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Observation of Impact Ionization in Silicon at Low Temperature2017

    • Author(s)
      Y.Ono,H.Firdaus,and M.Hori
    • Organizer
      IV Bilateral Italy-Japan Seminar
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Study of Stability of A-few-donor Quantum Dots with Different Configurations for Room-Temperature Single-Electron Tunneling Operation2017

    • Author(s)
      Hasan KM Tarik, Samanta Arup, Affiff Adnan, Anh Le The, Manoharan Muruganathan, Hori Masahiro, Ono Yukinori ,Mizuta Hiroshi,Tabe Michiharu, Moraru Daniel
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] SOI MOS p-i-nダイオードの低温チャージポンピング2017

    • Author(s)
      渡邉時暢, 堀匡寛, 小野行徳
    • Organizer
      電子情報通信学会研究会
    • Place of Presentation
      北海道大学(北海道・札幌市)
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Real-time Monitoring of Charge-pumping Process for SiO2/Si Interface Analysis2017

    • Author(s)
      M.Hori,T.Watanabe and Y.Ono
    • Organizer
      The 15th International Conference on QiR
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] 高感度チャージポンピングEDMR法の開発2016

    • Author(s)
      堀 匡寛,成松諒一,土屋敏章,小野行徳
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ,新潟
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-26289105
  • [Presentation] Charge pumping EDMR for MOS interface analysis2016

    • Author(s)
      M.Hori,Y.Ono
    • Organizer
      The 18th Takayanagi Kenjiro Memorial Symposium
    • Place of Presentation
      静岡大学(静岡県・浜松市)
    • Year and Date
      2016-11-15
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Silicon Single Boron Transistor2016

    • Author(s)
      Y.Ono, M.Hori, A.Fujiwara
    • Organizer
      ICNERE EECCiS2016
    • Place of Presentation
      マラン(インドネシア)
    • Year and Date
      2016-10-31
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method by the charge pumping method2016

    • Author(s)
      土屋敏章,小野行徳
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Invited
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] 高感度チャージポンピングEDMR法の開発2016

    • Author(s)
      堀 匡寛, 成松諒一, 土屋敏章, 小野行徳
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Time domain charge pumping on silicon-on-insulator MOS transistors2016

    • Author(s)
      T.Watanabe, M.Hori, Y.Ono
    • Organizer
      2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD2016)
    • Place of Presentation
      函館国際ホテル(北海道・函館市)
    • Year and Date
      2016-06-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] 高感度チャージポンピングEDMR法の開発2016

    • Author(s)
      堀 匡寛, 成松諒一, 土屋敏章, 小野行徳
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Charge pumping EDMR for MOS interface analysis2016

    • Author(s)
      M.Hori,Y.Ono
    • Organizer
      The 18th Takayanagi Kenjiro Memorial Symposium
    • Place of Presentation
      静岡大学(静岡県・浜松市)
    • Year and Date
      2016-11-15
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Novel application of the charge pumping process for charge and spin control2016

    • Author(s)
      M.Hori,Y.Ono
    • Organizer
      EMN Meeting on Quantum 2016
    • Place of Presentation
      プーケット (タイ)
    • Year and Date
      2016-04-08
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Charge pumping EDMR towards charge/spin manipulation in silicon at room temperature2016

    • Author(s)
      M.Hori, R.Narimatsu, Y.Ono
    • Organizer
      2016 IEEE Silicon Nanoelectronics Workshop(SNW2016)
    • Place of Presentation
      ホノルル(米国)
    • Year and Date
      2016-06-12
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] EDMR on recombination process in Silicon MOSFETs at room Temperature2016

    • Author(s)
      M.Hori, Y.Ono
    • Organizer
      Inter Academia2016
    • Place of Presentation
      ワルシャワ(ポーランド)
    • Year and Date
      2016-09-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] シリコン酸化膜界面欠陥の低温 チャージポンピング2016

    • Author(s)
      渡辺時暢、堀匡寛、小野行徳
    • Organizer
      電子情報通信学会 研究会「機能ナノデバイスおよび関連技術」
    • Place of Presentation
      北海道大学 百年記念会館(北海道札幌市)
    • Year and Date
      2016-03-03
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] EDMR on recombination process in Silicon MOSFETs at room Temperature2016

    • Author(s)
      M.Hori, Y.Ono
    • Organizer
      Inter Academia2016
    • Place of Presentation
      ワルシャワ(ポーランド)
    • Year and Date
      2016-09-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method by the charge pumping method2016

    • Author(s)
      土屋敏章,小野行徳
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method2016

    • Author(s)
      土屋敏章,小野行徳
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ,新潟
    • Year and Date
      2016-09-13
    • Invited
    • Data Source
      KAKENHI-PROJECT-26289105
  • [Presentation] Charge pumping EDMR towards charge/spin manipulation in silicon at room temperature2016

    • Author(s)
      M.Hori, R.Narimatsu, Y.Ono
    • Organizer
      2016 IEEE Silicon Nanoelectronics Workshop(SNW2016)
    • Place of Presentation
      ホノルル(米国)
    • Year and Date
      2016-06-12
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Manipulation of Single Charges Using Dopant Atoms in Silicon-Interplay with Intervalley Phonon Emission2016

    • Author(s)
      Y.Ono, M.Hori, G.P.Lansbergen, A.Fujiwara
    • Organizer
      Inter Academia2016
    • Place of Presentation
      ワルシャワ(ポーランド)
    • Year and Date
      2016-09-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Silicon Single Boron Transistor2016

    • Author(s)
      Y.Ono, M.Hori, A.Fujiwara
    • Organizer
      ICNERE EECCiS2016
    • Place of Presentation
      マラン(インドネシア)
    • Year and Date
      2016-10-31
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Single-dopant transistor and pump-interplay with single phonon-2016

    • Author(s)
      小野 行徳
    • Organizer
      フォノンエンジニアリング講演会
    • Place of Presentation
      早稲田大学(東京都・新宿区)
    • Invited
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Time domain charge pumping on silicon-on-insulator MOS transistors2016

    • Author(s)
      T.Watanabe, M.Hori, Y.Ono
    • Organizer
      2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD2016)
    • Place of Presentation
      函館国際ホテル(北海道・函館市)
    • Year and Date
      2016-07-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Single-dopant transistor and pump-interplay with single phonon-2016

    • Author(s)
      小野 行徳
    • Organizer
      フォノンエンジニアリング講演会
    • Place of Presentation
      早稲田大学(東京都・新宿区)
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Manipulation of Single Charges Using Dopant Atoms in Silicon-Interplay with Intervalley Phonon Emission2016

    • Author(s)
      Y.Ono, M.Hori, G.P.Lansbergen, A.Fujiwara
    • Organizer
      Inter Academia2016
    • Place of Presentation
      ワルシャワ(ポーランド)
    • Year and Date
      2016-09-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] Novel application of the charge pumping process for charge and spin control2016

    • Author(s)
      M.Hori,Y.Ono
    • Organizer
      EMN Meeting on Quantum 2016
    • Place of Presentation
      プーケット (タイ)
    • Year and Date
      2016-04-08
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02339
  • [Presentation] ESR measurements of As donor electrons in silicon2015

    • Author(s)
      M. Hori, M. Uematsu, A. Fujiwara, Y. Ono
    • Organizer
      The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
    • Place of Presentation
      TOKI MESSE Niigata Convention Center Niigata, Japan
    • Year and Date
      2015-06-16
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289098
  • [Presentation] ESR measurements of As donor electrons in silicon2015

    • Author(s)
      M. Hori, M. Uematsu, A. Fujiwara, Y. Ono
    • Organizer
      The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
    • Place of Presentation
      TOKI MESSE Niigata Convention Center Niigata, Japan
    • Year and Date
      2015-06-16
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] Low Temperature Charge Pumping in SOI Gated PIN Diode2015

    • Author(s)
      T. Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono
    • Organizer
      2015 Silicon Nanoelectronics Workshop(SNW-2015)
    • Place of Presentation
      Rega Royal Hotel Kyoto, Japan
    • Year and Date
      2015-06-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289098
  • [Presentation] Cryogenic Charge Pumping using Silicon on Insulators2015

    • Author(s)
      T. Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, Y. Ono
    • Organizer
      28th International Microprocesses and Nanotechnology Conference (MNC2015)
    • Place of Presentation
      Toyama International Conference Center, Toyama
    • Year and Date
      2015-11-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] Charge Puming in SOI Gated PIN Diode2015

    • Author(s)
      T. Watanabe, M. Hori, T. Saruwatari, T. Tsuchiya, A. Fujiwara, Y. Ono
    • Organizer
      2015 Silicon Nanoelectronics Workshop (SNW-2015)
    • Place of Presentation
      Rega Royal Hotel Kyoto, Japan
    • Year and Date
      2015-06-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] Charge pumping by point defects - Towards ultimate control of recombination in silicon2015

    • Author(s)
      Y. Ono M. Hori
    • Organizer
      Silicon nanoelectronics for advanced applications
    • Place of Presentation
      Campus Plaza Kyoto, Kyoto
    • Year and Date
      2015-06-16
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289098
  • [Presentation] Electrically detected magnetic resonance study on silicon PN junction2015

    • Author(s)
      Y. Nishiuchi, K. Furuta, T. Mitani, M. Hori, Y. Ono
    • Organizer
      Electrically detected magnetic resonance study on silicon PN junction
    • Place of Presentation
      Jeju Island, Korea
    • Year and Date
      2015-07-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289098
  • [Presentation] Fabrication of triple-dot single-electron transistor and its turnstile operation2015

    • Author(s)
      M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, and Y. Takahashi
    • Organizer
      28th International Microprocesses and Nanotechnology Conference(MNC2015)
    • Place of Presentation
      Toyama International Conference Center, Toyama
    • Year and Date
      2015-11-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289098
  • [Presentation] ESR measurements of As donor electrons in silicon2015

    • Author(s)
      M. Hori, M. Uematsu, A. Fujiwara, Y. Ono
    • Organizer
      The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
    • Place of Presentation
      TOKI MESSE Niigata Convention Center Niigata, Japan
    • Year and Date
      2015-06-16
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Fabrication of triple-dot single-electron transistor and its turnstile operation2015

    • Author(s)
      M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, and Y. Takahashi
    • Organizer
      28th International Microprocesses and Nanotechnology Conference(MNC2015)
    • Place of Presentation
      Toyama International Conference Center, Toyama
    • Year and Date
      2015-11-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Cryogenic Charge Pumping using Silicon on Insulators2015

    • Author(s)
      T. Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono
    • Organizer
      8th International Microprocesses and Nanotechnology Conference(MNC2015)
    • Place of Presentation
      Toyama International Conference Center, Toyama
    • Year and Date
      2015-11-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25289098
  • [Presentation] Charge pumping by point defects - Towards ultimate control of recombination in silicon2015

    • Author(s)
      Y. Ono M. Hori
    • Organizer
      Silicon nanoelectronics for advanced applications
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2015-06-16
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Cryogenic Charge Pumping using Silicon on Insulators2015

    • Author(s)
      T. Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono
    • Organizer
      8th International Microprocesses and Nanotechnology Conference(MNC2015)
    • Place of Presentation
      Toyama International Conference Center, Toyama
    • Year and Date
      2015-11-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Electrically detected magnetic resonance study on silicon PN junction2015

    • Author(s)
      Y. Nishiuchi, K. Furuta, T. Mitani, M. Hori, Y. Ono
    • Organizer
      2015 Asdia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Jeju Island, Korea
    • Year and Date
      2015-07-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Electrically detected magnetic resonance study on silicon PN junction2015

    • Author(s)
      Y. Nishiuchi, K. Furuta, T. Mitani, M. Hori, Y. Ono
    • Organizer
      2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)
    • Place of Presentation
      Jeju Island, Korea
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] Charge pumping by point defects –Towards ultimate control of recombination in silicon-2015

    • Author(s)
      Y. Ono and M. Hori
    • Organizer
      III Bilateral Italy-Japan Seminar
    • Place of Presentation
      Campus Plaza Kyoto, Kyoto Japan
    • Year and Date
      2015-06-16
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] Low Temperature Charge Pumping in SOI Gated PIN Diode2015

    • Author(s)
      T. Watanabe, M. Hori, T. Saruwatari, A. Fujiwara, and Y. Ono
    • Organizer
      2015 Silicon Nanoelectronics Workshop(SNW-2015)
    • Place of Presentation
      Rega Royal Hotel Kyoto, Japan
    • Year and Date
      2015-06-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13970
  • [Presentation] Electron pump by a single atom -Towards ultimate control of electronic charges-2014

    • Author(s)
      Y. Ono, G. P. Lansbergen, M. Hori, A. Fujiwara
    • Organizer
      2014 International Workshop on Advanced Nanovision Science
    • Place of Presentation
      静岡大学 浜松キャンパス、浜松
    • Invited
    • Data Source
      KAKENHI-PROJECT-24360128
  • [Presentation] Time domain measurements of charge pumping current2014

    • Author(s)
      M. Hori, T. Watanabe, T. Tsuchiya and Y. Ono
    • Organizer
      2014 IEEE Silicon Nanoelectronics Workshop
    • Place of Presentation
      Hilton Hawaiian Village, Honolulu, USA
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] Evaluation of accuracy of time-domain charge pumping method2014

    • Author(s)
      T. Watanabe, M. Hori, T. Tsuchiya and Y. Ono
    • Organizer
      2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2014)
    • Place of Presentation
      Kanazawa Bunka Hall, Kanazawa, Japan
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] ESR study on pure single crystalline sapphire2013

    • Author(s)
      M. Hori, N. Fukumoto, Y. Ono, R. Chikaoka, Y. Hayakawa, S. Moriwaki, N. Mio
    • Organizer
      Asia-Pacific Conference on Green Technology with Silicides and Related Materials
    • Place of Presentation
      筑波大学、つくば
    • Data Source
      KAKENHI-PROJECT-24360128
  • [Presentation] ESR study of arsenic in silicon in low ion-implantation-dose regime2013

    • Author(s)
      M. Hori, H. Tanaka, A. Fujiwara, Y. Ono
    • Organizer
      The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
    • Place of Presentation
      Ishikawa Ongakudo、金沢
    • Data Source
      KAKENHI-PROJECT-24360128
  • [Presentation] Electron spin resonance measurement of sapphire for KAGRA mirrors2013

    • Author(s)
      N. Fukumoto, Y. Ono, M. Hori, R. Chikaoka, Y. Hayakawa, S. Moriwaki, and N. Mio
    • Organizer
      The 12th Asia Pacific Physics Conference
    • Place of Presentation
      Makuhari Messe Chiba Japan
    • Data Source
      KAKENHI-PROJECT-24360128
  • [Presentation] Electroluminescence study of phosphorous ionization in silicon-on-insulator metal-oxide-semiconductor field-effect transistors2011

    • Author(s)
      Jin-ichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, Akira Fujiwara
    • Organizer
      The International Symposium on Nanoscale Transport and Technology(ISNTT2011)
    • Place of Presentation
      厚木市
    • Year and Date
      2011-01-11
    • Data Source
      KAKENHI-PROJECT-22310062
  • [Presentation] Electroluminescence study of phosphorous ionization in silicon-on- insulator metal-oxide-semiconductor field-effect transistors2011

    • Author(s)
      J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara
    • Organizer
      The International Symposium on Nanoscale Transport and Technology
    • Place of Presentation
      NTT 厚木研究開発センタ(厚木市)
    • Year and Date
      2011-01-11
    • Data Source
      KAKENHI-PROJECT-22310062
  • [Presentation] Dopants in silicon transistors ; Transport and Photoemission2011

    • Author(s)
      Y.Ono
    • Organizer
      CMOS Emerging Technologies Workshop
    • Place of Presentation
      Whistler, BC, Canada(Invited)
    • Year and Date
      2011-06-16
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Significance of the interface regarding magnetic properties of Mn nanosilicide in silicon2010

    • Author(s)
      Y. Ono
    • Organizer
      Asia-Pacific Conference on Semiconducting Silicides and Related materials Science and Technology Towards Sustainable Optoelectronics
    • Place of Presentation
      Tsukuba
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Strong Stark effect of electroluminescence in thin SOI MOSFETs2010

    • Author(s)
      J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima, and A. Fujiwara
    • Organizer
      2010 International Conference on Solid State Devices and Materials
    • Place of Presentation
      東京大学(東京都)
    • Year and Date
      2010-09-23
    • Data Source
      KAKENHI-PROJECT-22310062
  • [Presentation] Si single-dopant FETs and observation of single-dopant potential by LT-KFM2010

    • Author(s)
      M.Tabe, D.Moraru, M.Anwar, Y.Kawai, S.Miki, Y.Ono, T.Mizuno
    • Organizer
      5th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Si Single-Dopant FETs and Observation of Single -Dopant Potential by LT-KFM2010

    • Author(s)
      M. Tabe, D. Moraru, M. Anwar, Y. Kawai, S. Miki, Y. Ono, T. Mizuno
    • Organizer
      5th Int. Workshop on New Group IV Semiconductor Nanoelectronics (SiGe(C))
    • Place of Presentation
      Sendai
    • Data Source
      KAKENHI-PROJECT-18063010
  • [Presentation] Single dopant effects in silicon nano transistors2010

    • Author(s)
      Y.Ono, M.Khalafalla, K.Nishiguchi, A.Fujiwara
    • Organizer
      Single Dopant Control
    • Place of Presentation
      Leiden, Netherlands(招待講演)
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Single dopant effects in silicon nano transistors2010

    • Author(s)
      Y.Ono, M.Khalafalla, K.Nishiguchi, A.Fujiwara
    • Organizer
      2010 International Symposium on Atom-scale Silicon HybridNanotechnologies for 'More-than-Moore'& 'Beyond CMOS' Era
    • Place of Presentation
      Southampton, UK(招待講演)
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] 薄層SOI-MOSFET の電流注入発光における巨大Stark 効果2010

    • Author(s)
      登坂仁一郎、西口克彦、小野行徳、影島博之、藤原聡
    • Organizer
      2010 年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎市)
    • Year and Date
      2010-09-17
    • Data Source
      KAKENHI-PROJECT-22310062
  • [Presentation] Strong Stark effect of electroluminescence in thin SOI MOSFETs2010

    • Author(s)
      Jin-ichiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, Akira Fujiwara
    • Organizer
      2010 International Conference on Solid State Devices and Materials(SSDM)
    • Place of Presentation
      東京都
    • Year and Date
      2010-09-23
    • Data Source
      KAKENHI-PROJECT-22310062
  • [Presentation] Single dopant effects in silicon nano transistors2010

    • Author(s)
      Y.Ono, M.Khalafalla, K.Nishiguchi, A.Fujiwara
    • Organizer
      Single Dopant Control
    • Place of Presentation
      Leiden, Netherlands
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Single dopant effects in silicon nano transistors2010

    • Author(s)
      Y.Ono, M.Khalafalla, K.Nishiguchi, A.Fujiwara
    • Organizer
      2010 International Symposium on Atom-scale Silicon Hybrid Nanotechnologies for 'More-than-Moore' & 'Beyond CMOS' Era
    • Place of Presentation
      southampton, UK
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] 薄層SOI-MOSFETの電流注入発光における巨大Stark効果2010

    • Author(s)
      登坂仁一郎, 西口克彦, 小野行徳, 影島博之, 藤原聡
    • Organizer
      2010年秋季 第71回応用物理学会学術講演会
    • Place of Presentation
      長崎市
    • Year and Date
      2010-09-17
    • Data Source
      KAKENHI-PROJECT-22310062
  • [Presentation] Significance of the interface regarding magnetic properties of Mn-nanosilicide in silicon2010

    • Author(s)
      Y.Ono
    • Organizer
      Asia-Pacific Conference on Semiconducting Silicides and Related materials Science and Technology Towards Sustainable Ontoelectronies
    • Place of Presentation
      Tsukuba
    • Year and Date
      2010-07-26
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] In-plane transport in a double layer crystalline silicon structure with an SiO2 barrier2009

    • Author(s)
      K. Takashina, M. Nagase, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa, K. Muraki
    • Organizer
      International Symposium on Nanoscale Transport and Technology, (ISNTT-2009)
    • Place of Presentation
      Atsugi, Japan
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Asymmetric mobility of electrons and holes with respect to quantum-well potential in a double gate SIMOX MOSFET2009

    • Author(s)
      Y. Niida, K. Takashina, Y. Ono, A. Fujiwara, Y. Hirayama, K. Muraki
    • Organizer
      International Symposium on Nanoscale Transport and Technology, (ISNTT-2009)
    • Place of Presentation
      Atsugi, Japan
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Detection and position analysis of sinle and coupled acceptors in silicon nano field-effect transistors2009

    • Author(s)
      M. A. H. Khalafalla, Y. Ono, K. Nishiguchi, A. Fujiwara
    • Organizer
      International Symposium on Nanoscale Transport and Technology, (ISNTT-2009)
    • Place of Presentation
      Atsugi, Japan
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Identification of single dopants in nanowire MOSFETs2009

    • Author(s)
      Y.Ono, M.Khalafalla, S.Horiguchi, K.Nishiguchi, A.Fujiwara
    • Organizer
      2009 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Sendai(招待講演)
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Effect of δ-function-like boron charge sheet on p-channel ultra-thin SOI MOSFETs2009

    • Author(s)
      M.Kawachi, Y.Ono, A.Fujiwara, S.Horiguchi
    • Organizer
      2009 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Identification of single dopants in nanowire MOSFETs2009

    • Author(s)
      Y.Ono, M.Khalafalla, S.Horiguchi, K.Nishiguchi, A.Fujiwara :
    • Organizer
      2009 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Detection and position analysis of sinle and coupled acceptors in silicon nano field-effect transistors2009

    • Author(s)
      M.A.H.Khalafalla, Y.Ono, K.Nishiguchi, A.Fujiwara
    • Organizer
      2009 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Single boron detection in nano-scale SOI MOSFETs2008

    • Author(s)
      Y. Ono
    • Organizer
      The 2008 International Meeting for Future of Electron Devices, Kansai (IEEE IMFEDK-2008)
    • Place of Presentation
      Osaka, Japan
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] New functional single-electron devices using nanodot array and multiple input gates2008

    • Author(s)
      Y. Takahashi, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, H. Inokawa : (Invited)
    • Organizer
      The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008)
    • Place of Presentation
      Nagoya, Japan
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Single-electron devices and their circuit applications2008

    • Author(s)
      A. Fujiwara, K. Nishiguchi, Y. Ono, H. Inokawa, Y. Takahashi : (invited)
    • Organizer
      2008 Tera-level nanodevices (TND) Technical Forum
    • Place of Presentation
      Korea
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Single-dopant effect in Si MOSFETs2008

    • Author(s)
      Y. Ono, M. Khalafalla, A. Fujiwara, K. Nishiguchi, K. Takashina, S. Horiguchi, Y. Takahashi, H. Inokawa
    • Organizer
      IEEE Nanotechonology Materials and Devices Conference 2008 (NMDC-2008)
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] In-plane transport in a double layer crystalline silicon structure with an SiO2 barrier2008

    • Author(s)
      K. Takashina, M. Nagase, K. Nishiguchi, Y. Ono, A. Fujiwara, T. Fujisawa
    • Organizer
      IEEE Nanotechonology Materials and Devices Conference 2008 (NMDC-2008)
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Single boron detection in nano-scale SOI MOSFETs2008

    • Author(s)
      Y.Ono
    • Organizer
      The 2008 International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      Osaka, Japan(招待講演)
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Escape dynamics of electron in a single-electron ratchet using silicon nanowire MOSFETs2008

    • Author(s)
      S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Ito, A. Fujiwara
    • Organizer
      IEEE Nanotechonology Materials and Devices Conference 2008 (NMDC-2008)
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Single-dopant effect in Si MOSFETs2008

    • Author(s)
      Y.Ono, M.Khalafalla, A.Fujiwara, K.Nishiguchi, K.Takashina, S.Horiguchi, Y.Takahashi, H.Inokawa
    • Organizer
      IEEE Nanotechonology Materials and Devices Conference 2008
    • Place of Presentation
      Kyoto(招待講演)
    • Data Source
      KAKENHI-PROJECT-20241036
  • [Presentation] Hopping conduction in buried-channel SOI MOSFETs with shallow impurities2007

    • Author(s)
      Y.Ono
    • Organizer
      International Conference on Nanoelectronics, Nanostructures, and Carrier Interaction
    • Place of Presentation
      Atsugi,Kanagawa
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics2007

    • Author(s)
      Y.Ono
    • Organizer
      Fifth International Symposium on Control of Semiconductor Interfaces
    • Place of Presentation
      Tokyo
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] New functional single-electron devices using nanodot array and multiple input gates2007

    • Author(s)
      Y. Takahashi, T. Kaizawa, M. Arita, A. Fujiwara, Y. Ono, and H. Inokawa
    • Organizer
      3rd International Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Dopant-mediated charge transport in boron-doped nano MOSFETs2007

    • Author(s)
      Y.Ono
    • Organizer
      2007 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Kyoto
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Hopping conduction in buried-channel SOI MOSFETs with shallow impurities2007

    • Author(s)
      Y. Ono
    • Organizer
      International Conference on Nanoelectronics, Nanostructures, and Carrier Interaction
    • Place of Presentation
      Atsugi, Kanagawa
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Effects of Parameter Randomness on Quantized-electron transfer in 1D Multiple-Tunnel-Junction Arrays2007

    • Author(s)
      D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, H. Ikeda, M. Tabe
    • Organizer
      2007 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Kyoto
    • Data Source
      KAKENHI-PROJECT-18063010
  • [Presentation] A simple test structure for extracting capacitances in nanometer-scale MOSFETs2007

    • Author(s)
      H. Inokawa, A. Fujiwara, K. Nishiguchi, Y. Ono, and H. Satoh
    • Organizer
      The 6-th annual International Conference on Global Research and Education
    • Place of Presentation
      Inter-Academia, Hamamatsu
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Single-electron ratchet using silicon nanowie MOSFET2007

    • Author(s)
      A. Fujiwara, K. Nishiguchi, and Y. Ono
    • Organizer
      International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures
    • Place of Presentation
      Genova Magazzini del Cotone, Italy
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wires2006

    • Author(s)
      D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, R. Nuryadi, H. Ikeda, M. Tabe
    • Organizer
      Solid State Devices and Materials (SSDM 2006)
    • Place of Presentation
      Yokohama
    • Data Source
      KAKENHI-PROJECT-18063010
  • [Presentation] Impurity conduction and its control in phosphorus-doped SOI MOSFET2006

    • Author(s)
      Y. Ono
    • Organizer
      2006 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Hawaii, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Single-eleclron transfer in silicon2006

    • Author(s)
      Y. Ono
    • Organizer
      The 3rd International Workshop on Ubiquitous Knowledge Network Environment
    • Place of Presentation
      Sapporo, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Single-electron transfer in silicon2006

    • Author(s)
      Y.Ono
    • Organizer
      The 3^<rd> International Workshop on Ubiquitous Knowledge Network Environment
    • Place of Presentation
      Sapporo,Japan
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Impurity conduction and its control in phosphorus-doped SOI MOSFET2006

    • Author(s)
      Y.Ono
    • Organizer
      2006 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Hawaii,USA
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Silicon single-electron pump and turnstile; Interplay with crystalline imperfection2005

    • Author(s)
      Y.Ono
    • Organizer
      2005 Material Research Society Spring Meeting
    • Place of Presentation
      San Francisco,CA,USA
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Single-electron transfer in silicon2005

    • Author(s)
      Y. Ono
    • Organizer
      2005 International Workshop on the Physics semiconductor devices
    • Place of Presentation
      NewDelhi, India
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Silicon single-electron pump and turnstile ; Interplay with crystalline imperfection2005

    • Author(s)
      Y. Ono
    • Organizer
      2005 Material Research Society Spring Meeting
    • Place of Presentation
      San Francisco, CA, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] ingle-electron manipulation Interplay with crystalline imperfection2005

    • Author(s)
      Y.Ono
    • Organizer
      2^<nd> International Symposium on Point Defect and Nonstoichiometry
    • Place of Presentation
      Kaoshiung,Taiwan
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Single-electron transfer in silicon2005

    • Author(s)
      Y.Ono
    • Organizer
      2005 International Workshop on the Physics semiconductor devices
    • Place of Presentation
      NewDelhi,India
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Single-electron manipulation in silicon; Towards single-dopant electronics2005

    • Author(s)
      Y.Ono
    • Organizer
      7^<th> International Conference on New Phenomena in Mesoscopic Structures and 5^<th> International Conference on Surfaces and Interfaces of Mesoscopic Devices
    • Place of Presentation
      Maui,USA
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Room- and low-temperature characteristics of phosphorus-doped SOI MOSFET2005

    • Author(s)
      Y.Ono
    • Organizer
      International Conference on Nanoelectronics, Nanostructures, and Carrier Interaction
    • Place of Presentation
      Atsugi,Kanagawa
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Single-electron manipulation Interplay with crystalline imperfection2005

    • Author(s)
      Y. Ono
    • Organizer
      2nd International Symposium on Point Defect and Nonstoichiometry
    • Place of Presentation
      Kaoshiung, Taiwan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Single-electron transistor and its logic applications2004

    • Author(s)
      Y. Ono
    • Organizer
      ITRS Emerging research logic devices workshop
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2004-09-24
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Charge-state control of phosphorus donors in SOI MOSFET2004

    • Author(s)
      Y.Ono
    • Organizer
      2004 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tokyo
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Single-electron transistor and its logic applications2004

    • Author(s)
      Y.Ono
    • Organizer
      ITRS Emerging research logic devices workshop
    • Place of Presentation
      Leuven,Belgium
    • Year and Date
      2004-09-24
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Charge-state control of phosphorus donors in SOI MOSFET2004

    • Author(s)
      Y. Ono
    • Organizer
      2004 International Conference on Solid-State Devices and Materials
    • Place of Presentation
      Tokyo
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Time domain measurement of the charge pumping current

    • Author(s)
      Masahiro Hori, Tokinobu Watanabe, Toshiaki Tsuchiya, Yukinori Ono
    • Organizer
      Silicon Nanoelectronics Workshop
    • Place of Presentation
      Hilton Hawaiian Village (Honolulu)
    • Year and Date
      2014-06-08 – 2014-06-09
    • Data Source
      KAKENHI-PROJECT-26289105
  • [Presentation] Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method by the charge pumping method

    • Author(s)
      T. Tsuchiya, Y. Ono
    • Organizer
      2014 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba Japan
    • Year and Date
      2014-09-09 – 2014-09-11
    • Data Source
      KAKENHI-PROJECT-25289098
  • [Presentation] Time-domain measurements of charge pimping current

    • Author(s)
      M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono
    • Organizer
      2014 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Honolulu, Hawaii, USA
    • Year and Date
      2014-06-08 – 2014-06-09
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] 単一Si/SiO2界面トラップのチャージポンピング(CP)特性:Pb0センターの電気的直接観測と従来CP理論の原理的改善

    • Author(s)
      土屋敏章,小野行徳
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-26289105
  • [Presentation] Electron spin resonance measurement of sapphire for KAGRA mirrors

    • Author(s)
      N. Fukumoto, Y. Ono, M. Hori, R. Chikaoka, Y. Hayakawa, S. Moriwaki, and N. Mio
    • Organizer
      12th Asia Pacific Physics Conference
    • Place of Presentation
      Chiba, Japan
    • Data Source
      KAKENHI-PROJECT-25289098
  • [Presentation] チャージポンピング電流の実時間計測による電子捕獲過程の解析

    • Author(s)
      堀 匡寛,渡辺時暢,土屋敏章,小野行徳
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-26289105
  • [Presentation] Single-electron manipulation in silicon ; Towards single-dopant electronics

    • Author(s)
      Y. Ono
    • Organizer
      7th International Conference on New Phenomena in Mesoscopic Structures and 5th International Conference on Surfaces and Interfaces of Mesoscopic Devices
    • Place of Presentation
      Maui, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Evaluation of accuracy of time-domain charge pumping

    • Author(s)
      T. Watanabe, M. Hori, T. Tsuchiya, Y. Ono
    • Organizer
      2014 Asdia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Kanazawa, Japan
    • Year and Date
      2014-07-01 – 2014-07-03
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] ESR study of arsenic in silicon in low ion-implantation-dose regime

    • Author(s)
      M. Hori, H. Tanaka, A. Fujiwara, Y. Ono
    • Organizer
      The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
    • Place of Presentation
      Kanazawa, Japan
    • Data Source
      KAKENHI-PROJECT-25600015
  • [Presentation] Time-domain measurements of charge pimping current

    • Author(s)
      M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono
    • Organizer
      2014 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Honolulu, Hawaii, USA
    • Year and Date
      2014-06-08 – 2014-06-09
    • Data Source
      KAKENHI-PROJECT-25600015
  • [Presentation] Single dopant physics and electronics

    • Author(s)
      Y. Ono
    • Organizer
      Silicon nanoelectronics for advanced applications
    • Place of Presentation
      Verona, Italy
    • Invited
    • Data Source
      KAKENHI-PROJECT-25600015
  • [Presentation] Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method

    • Author(s)
      Toshiaki Tsuchiya, Yukinori Ono
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba International Congress Center
    • Year and Date
      2014-09-09 – 2014-09-11
    • Data Source
      KAKENHI-PROJECT-26289105
  • [Presentation] ESR Study of Arsenic in Silicon in Low Ion-implantation-dose Regime

    • Author(s)
      M. Hori, H. Tanaka, A. Fujiwara, and Y. Ono
    • Organizer
      The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013)
    • Place of Presentation
      Ishikawa Ongakudo, Kanazawa, Japan
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] チャージポンピング電流の実時間計測による電子捕獲過程の解析

    • Author(s)
      堀 匡寛、渡辺 時暢、土屋 敏章、小野 行徳
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川県、東海大学
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] ESR study on pure single crystalline sapphire

    • Author(s)
      M. Hori, N. Fukumoto, Y. Ono, R. Chikaoka, Y. Hayakawa, S. Moriwaki, N. Mio
    • Organizer
      Asia-Pacific Conference on Green Technology with Silicides and Related Materials
    • Place of Presentation
      Tsukuba Japan
    • Data Source
      KAKENHI-PROJECT-25289098
  • [Presentation] Room-and low-temperature characteristics of phosphorus-doped SOI MOSFET

    • Author(s)
      Y. Ono
    • Organizer
      International Conference on Nanoelectronics, Nanostructures, and Carrier Interaction
    • Place of Presentation
      Atsugi, Kanagawa
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Electron pump by a single atom -Towards ultimate control of electronic charges-

    • Author(s)
      Y. Ono, G. P. Lansbergen, M. Hori, A. Fujiwara
    • Organizer
      2014 International Workshop on Advanced Nanovision Science
    • Place of Presentation
      Hamamatsu, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-25600015
  • [Presentation] チャージポンピング電流の実時間計測による電子放出,再結合過程の直接観察

    • Author(s)
      堀 匡寛,渡辺時暢,土屋敏章,小野行徳
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-26289105
  • [Presentation] ESR study on pure single crystalline sapphire

    • Author(s)
      M. Hori, N. Fukumoto, Y. Ono, R. Chikaoka, Y. Hayakawa, S. Moriwaki, N. Mio
    • Organizer
      Asia-Pacific Conference on Green Technology with Silicides and Related Materials
    • Place of Presentation
      Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-25600015
  • [Presentation] ESR study on pure single crystalline sapphire

    • Author(s)
      M. Hori, N. Fukumoto, Y. Ono, R. Chikaoka, Y. Hayakawa, S. Moriwaki, N. Mio
    • Organizer
      The Asia-Pacific Conference on Green Technology with Silicides and Related Materials (APAC-SILICIDE 2013)
    • Place of Presentation
      University of Tsukuba, Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] Electron pump by a single atom Towards ultimate control of electronic charges

    • Author(s)
      Y. Ono, G. P. Lansbergen, M. Hori, A. Fujiwara
    • Organizer
      2014 International Workshop on Advanced Nanovision Science
    • Place of Presentation
      Shizuoka University, Shizuoka, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] Evaluation of accuracy of time-domain charge pumping

    • Author(s)
      T. Watanabe, M. Hori, T. Tsuchiya, Y. Ono
    • Organizer
      2014 Asdia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Kanazawa, Japan
    • Year and Date
      2014-07-01 – 2014-07-03
    • Data Source
      KAKENHI-PROJECT-25289098
  • [Presentation] Charge transport in boron-doped nano MOSFETs : Towards single-dopant electronics

    • Author(s)
      Y. Ono
    • Organizer
      Fifth International Symposium on Control of Semiconductor Interfaces
    • Place of Presentation
      Tokyo
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16206038
  • [Presentation] Magnetoresistance and microstructure of Fe-MgF2 single layer granular films

    • Author(s)
      Toshihiro Yokono, Eita Sato, Yosuke Murakami, Masashi Arita, and Yasuo Takahashi
    • Organizer
      The 6th IEEE International Nanoelectronics Conference, (IEEE INEC 2014)
    • Place of Presentation
      Hokkaido Univ., Japan
    • Year and Date
      2014-07-28 – 2014-07-31
    • Data Source
      KAKENHI-PROJECT-24360128
  • [Presentation] Time-domain measurements of charge pimping current

    • Author(s)
      M. Hori, T. Watanabe, T. Tsuchiya, Y. Ono
    • Organizer
      2014 Silicon Nanoelectronics Workshop
    • Place of Presentation
      Honolulu, Hawaii, USA
    • Year and Date
      2014-06-08 – 2014-06-09
    • Data Source
      KAKENHI-PROJECT-25289098
  • [Presentation] Charge Puming in SOI Gated PIN Diode

    • Author(s)
      T. Watanabe, M. Hori, T. Saruwatari, T. Tsuchiya, A. Fujiwara, Y. Ono
    • Organizer
      Silicon Nanoelectronics Workshop 2015
    • Place of Presentation
      Rega Royal Hotel Kyoto, Japan
    • Year and Date
      2015-06-14 – 2015-06-15
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] 実時間チャージポンピングの精度評価

    • Author(s)
      渡辺時暢、堀 匡寛、土屋敏章、小野行徳
    • Organizer
      電子情報通信学会研究会 シリコン材料・デバイス研究会
    • Place of Presentation
      北海道、北海道大学
    • Year and Date
      2015-02-05 – 2015-02-06
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] Electron pump by a single atom -Towards ultimate control of electronic charges-

    • Author(s)
      Y. Ono, G. P. Lansbergen, M. Hori, A. Fujiwara
    • Organizer
      2014 International Workshop on Advanced Nanovision Science
    • Place of Presentation
      Hamamatsu Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-25289098
  • [Presentation] Electron spin resonance measurement of sapphire for KAGRA mirrors

    • Author(s)
      N. Fukumoto, Y. Ono, M. Hori, R. Chikaoka, Y. Hayakawa, S. Moriwaki, N. Mio
    • Organizer
      The 12th Asia Pacific Physics Conference (APPC12)
    • Place of Presentation
      Makuhari Messe, Chiba, Japan
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] 実時間チャージポンピング法の開発

    • Author(s)
      渡辺 時暢,堀 匡寛,土屋 敏章,小野 行徳
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大、神奈川
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] Evaluation of accuracy of time-domain charge pumping

    • Author(s)
      T. Watanabe, M. Hori, T. Tsuchiya, Y. Ono
    • Organizer
      2014 Asdia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Kanazawa, Japan
    • Year and Date
      2014-07-01 – 2014-07-03
    • Data Source
      KAKENHI-PROJECT-25600015
  • [Presentation] Single dopant physics and electronics

    • Author(s)
      Y. Ono
    • Organizer
      Silicon nanoelectronics for advanced applications
    • Place of Presentation
      Verona, Italy
    • Invited
    • Data Source
      KAKENHI-PROJECT-25289098
  • [Presentation] チャージポンピング電流の実時間計測による電子放出、再結合過程の直接観測

    • Author(s)
      堀 匡寛、渡辺 時暢、土屋 敏章、小野 行徳
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川県、東海大学
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] シリコンPN接合における再結合電流のEDMR観察

    • Author(s)
      古田慧梧、小野行徳、西内祐樹、三谷太希、堀匡寛
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川県、東海大学
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] ESR measurements of As donor electrons in silicon

    • Author(s)
      M. Hori, M. Uematsu, A. Fujiwara, Y. Ono
    • Organizer
      The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
    • Place of Presentation
      TOKI MESSE Niigata Convention Center Niigata, Japan
    • Year and Date
      2015-06-16 – 2015-06-19
    • Data Source
      KAKENHI-PROJECT-25706003
  • [Presentation] Evaluation of Accuracy of Time Domain Charge Pumping

    • Author(s)
      Tokinobu Watanabe, Masahiro Hori1, Toshiaki Tsuchiya, Yukinori Ono
    • Organizer
      Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Kanazawa Bunka Hall
    • Year and Date
      2014-07-01 – 2014-07-03
    • Data Source
      KAKENHI-PROJECT-26289105
  • [Presentation] ESR study of arsenic in silicon in low ion-implantation-dose regime

    • Author(s)
      M. Hori, H. Tanaka, A. Fujiwara, Y. Ono
    • Organizer
      The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
    • Place of Presentation
      Kanazawa Japan
    • Data Source
      KAKENHI-PROJECT-25289098
  • 1.  HORI Masahiro (50643269)
    # of Collaborated Projects: 9 results
    # of Collaborated Products: 146 results
  • 2.  FUJIWARA Akira (70393759)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 30 results
  • 3.  TSUCHIYA Toshiaki (20304248)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 18 results
  • 4.  TABE Michiharu (80262799)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 6 results
  • 5.  IKEDA Hiroya (00262882)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 2 results
  • 6.  NISHIGUCHI Katsuhiko (00393760)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 47 results
  • 7.  MORARU Daniel (60549715)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 15 results
  • 8.  RATNO Nuryadi (70402245)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 9.  INOKAWA Hiroshi (50393757)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 17 results
  • 10.  KAGESHIMA Hiroyuki (70374072)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 9 results
  • 11.  TAKAHASHI Yasuo (90374610)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 12 results
  • 12.  AMEMIYA Yoshihito (80250489)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 13.  ISHIKAWA Yasuhiko (60303541)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 14.  HORIGUCHI Seiji (60375219)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 7 results
  • 15.  YAMAGUCHI Toru (30393763)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 16.  MOHAMMED Khalafalla (70463627)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 17.  NOBORISAKA Jinichiro (30515573)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 8 results
  • 18.  SHINADA Takahiro (30329099)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 19.  MIZUTA Hiroshi (90372458)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 20.  ARITA Masashi (20222755)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 21.  IKARI Tetsuo
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 22.  Verma Priyanka
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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