HYUNSEOK Na

… Alternative Names

NA Hyunseok

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Researcher Number	80411239
Affiliation (based on the past Project Information) *help	2010: 立命館大学, COE推進機構, ポストドクトラルフェロー 2008: 立命館大学, COE推進機構, 研究員 2006: 立命館大学, COE推進機構, ポストドクトラルフェロー 2006: 立命館大学, COE推進機構, 研究員
Review Section/Research Field	Except Principal Investigator Applied materials science/Crystal engineering / Science and Engineering
Keywords	Except Principal Investigator p形ドーピング / p型ドーピング / 分子線エピタキシー法 / 窒化インジウム / RF-MBE / InN / 結晶性 / キャリア濃度 / 窒素ラジカル / MIS構造 … More / InGaN / オーミックコンタクト / インターミキシング / ヘテロ界面 / 分子線エピタキシー / エピタキシャル成長 / 無極性 / ナノコラム / 多重量子井戸 / 光反射率 / ラジカルビーム / RHEED / その場観察 / 分子線エビタキシー法 / DERI法 / Seebeck係数 / サーモパワー / 窒化インジウムガリウム / ナノ構造 / 窒化物半導体 Less

RF-MBE Growth of InN and Related Alloys and Fabrication of Quantum Nanostructure
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Ritsumeikan University
Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Ritsumeikan University

All 2011 2010 2009 2008 2007

All Journal Article Presentation Book

[Book] Chapter 1-Molecular-beam epitaxy of InN, Editors : T. D. Veal, C. F. McConville, and W. J. Schaff, CRC Press/Taylor and Francis(in press)2009
- Author(s)
  Y. Nanishi, T. Araki and T. Yamaguchi
- Publisher
  Indium Nitride and Related Alloys
- Data Source
  KAKENHI-PROJECT-18206003
[Book] Chapter : 1-Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys (Editors : T.D.Veal, C.F.McConville, and W.J.Schaff)2009
- Author(s)
  Y.Nanishi, T.Araki, T.Yamaguchi
- Total Pages
  50
- Publisher
  CRC
- Data Source
  KAKENHI-PLANNED-18069012
[Book] Chapter: 1 - Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys2009
- Author(s)
  Y. Nanishi, T. Araki and T. Yamaguchi (Editors: T. D. Veal, C. F. McConville, and W. J. Schaff)
- Data Source
  KAKENHI-PLANNED-18069012
[Book] "Indium Nitride and Related Alloys" Chapter I Molecular-Beam Epitaxy of InN(edited by T.D.Veal, C.F.McConville, and W.J.Schaff)2009
- Author(s)
  Y.Nanishi, T.Araki, T.Yamaguchi
- Publisher
  CRC
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure2011
- Author(s)
  T.Yamaguchi, H.Umeda, T.Araki, Y.Nanishi
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- NAID
  210000070345
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2011
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Journal Title
  
  Jpn.J.Appl.Phys. 50巻
- NAID
  210000138257
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Application of Droplet Elimination Process by Radical -Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure2011
- Author(s)
  T.Yamaguchi, H.Umeda, T.Araki, Y.Nanishi
- Journal Title
  
  Jpn.J.Appl.Phys. 50巻
- NAID
  210000070345
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011
- Author(s)
  K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 98
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011
- Author(s)
  K.Wang, N.Miller, R.Iwamoto, T.Yamaguchi, M.A.Mayer, T.Araki, Y.Nanishi, K.M.Yu, E.E.Haller, W.Walukiewicz, J.W.Ager III
- Journal Title
  
  Appl.Phys.Lett. 98巻
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Proceedings of SPIE photonic West 2011
  
  Volume: 7939 Pages: 793904-793904
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Electronic Structure of Wurtzite and Rocksalt InN Investigated by Optical Absorption under Hydrostatic Pressure2010
- Author(s)
  J.Ibanez, A.Segura, F.J.Manjon, L.Artus, T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 96
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology2010
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(a) 207巻
  
  Pages: 19-23
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(a)
  
  Volume: 207 Pages: 1356-1360
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010
- Author(s)
  T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
- Journal Title
  
  Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
  
  Pages: 92-95
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, T.Kimura, K.Kawashima, T.Araki, Y.Nanishi
- Journal Title
  
  phys.stat.sol.(a) (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Hydrogen in InN : a Ubiquitous Phenomenon in Molecular Beam Epitaxy Grown Material2010
- Author(s)
  V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, B.Monemar, M.Schubert, N.Franco, C.L Hsiao, L.C.Chen, J.Schaff, T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Appl.Phys.Lett. 96
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Structural Anisotropy of Nonpolar and Semipolar InN Epitaxial Layers2010
- Author(s)
  V.Darakchieva, M.-Y.Xie, N.Franco, F.Giuliani, B.Nunes, E.Alues, C.L.Hsiao, L.C.Chen, T.Yamaguchi, Y.Takagi, K.Kawashima, Y.Nanishi
- Journal Title
  
  J.Appl.Phys.
  
  Volume: 108
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2010
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- NAID
  210000138257
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  T.Araki, D.Fukuoka, H.Tamiya, S.Harui, T.Yamaguchi, H.Miyake, K.Hiramatsu, Y.Nanishi
- Journal Title
  
  SPIE Photonics West 2009 Proceedings 7216
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Indium droplet elimination by radical beam irradiation for reproducible and high-quality growth of InN by RF molecular beam epitaxy2009
- Author(s)
  T. Yamaguchi and Y. Nanishi
- Journal Title
  
  Applied Physics Express 2 051001
  
  Pages: 1-3
- NAID
  10025085943
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Journal Title
  
  SPIE Photonics West 2009 Proceedings 7216
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Growth of M-plane(10-10) InN on LiAlO_2(100) Substrate, phys2009
- Author(s)
  Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Journal Title
  
  stat. sol (c)6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Journal Title
  
  SPIE Photonics West 2009 Proceedings 7216
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Growth and characterization of N-polar and In-polar InN films by RF-MBE, J2009
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, and Y. Nanishi
- Journal Title
  
  Cryst. Growth 311
  
  Pages: 2780-2782
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] TEM Characterization of M-plane InN Grown on (100) LiAlO_2 Substrate by RF-MBE, phys2009
- Author(s)
  H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Journal Title
  
  stat. sol (c)6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Photoexcited Carriers and Surface Recombination Velocity in InN Epilayers : A Raman Scattering Study2009
- Author(s)
  R.Cusco, J.Ibanez, E.Alarcon L.Artus, T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Phys.Rev.B. 80
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Raman-Scattering Study of the Long-Wavelength Longitudinal-Optical-Phonon-Plasmon Coupled Modes in High-Mobility InN Layers2009
- Author(s)
  R.Cusco, J.Ibanez, E.Alarcon L.Artus, T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Phys.Rev.B 79
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Electron Accumulation at Nonpolar and Semipolar Surfaces of Wurtzite InN from Generalized Infrared Ellipsometry2009
- Author(s)
  V.Darakchieva, M.Schubert, T.Hofmann, B.Monemar, Ching-Lien Hsiao, Ting-Wei Liu, Li-Chyong Chen, W.J.Schaff, Y.Takagi, Y.Nanishi
- Journal Title
  
  Appl.Phys.Lett. 95
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy2009
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Journal Title
  
  Applied Physics Express 2巻
- NAID
  10025085943
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Growth and characterization of N-polar and In-polar InN films by RF-MBE2009
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, N. Maeda, Y. Nanishi
- Journal Title
  
  J. Cryst. Growth (In press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] TEM Characterization of M-plane InN Grown on (100) LiAlO2 Substrate by RF-MBE2009
- Author(s)
  H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Journal Title
  
  phys. stat. sol. (c) 6(In press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Novel InN growth method under In-rich condition on GaN/Al_2O_3 (0001) templates, phys2009
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, N. Maeda, and Y. Nanishi
- Journal Title
  
  stat. sol (c)6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] TEM Characterization of M-plane InN Grown on (100) LiAlO2 Substrate by RF-MBE2009
- Author(s)
  H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Journal Title
  
  phys. stat. sol. (c) 6(In press)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Journal Title
  
  SPIE Photonics West 2009 Proceedings 7216 72160N
  
  Pages: 1-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Novel InN growth method under In-rich condition on GaN/Al_2O_3(0001) templates2009
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, N. Maeda, and Y. Nanishi
- Journal Title
  
  phys. stat. sol. (c) 6(In press)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Growth of M-plane(10-10) InN on LiAlO_2(100) Substrate2009
- Author(s)
  Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Journal Title
  
  phys. stat. sol. (c) 6(In press)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Indium droplet elimination by radical beam irradiation for reproducible and highquality growth of InN by RF molecular beam epitaxy2009
- Author(s)
  T. Yamaguchi and Y. Nanishi
- Journal Title
  
  Appl. Phys. Express 2
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Growth of M-plane(10-10) InN on LiAlO_2 (100) Substrate2009
- Author(s)
  Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Journal Title
  
  phys. stat. sol. (c) 6(In press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Growth and characterization of N-polar and In-polar InN films by RF-MBE2009
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, N. Maeda, and Y. Nanishi
- Journal Title
  
  J. Cryst. Growth (In press)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Appl. Phys2009
- Author(s)
  T. Yamaguchi and Y. Nanishi
- Journal Title
  
  Express 2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Journal Title
  
  Proc. of SPIE 7216 72160N
  
  Pages: 1-8
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Photoreflectance of InN and InN : Mg layers : An evidence for Fermi level shift to wards the valence band upon Mg doping in InN2008
- Author(s)
  R. Kudrawiec, T. Suski, J. Serafinczuk, J. Misiewicz, D. Muto, and Y. Nanishi
- Journal Title
  
  Appl. Phys. Lett 93
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns, Jpn2008
- Author(s)
  S. Harui, H. Tamiya, T. Akagi, H. Miyake, K. Hiramatsu, T. Araki and Y. Nanishi
- Journal Title
  
  J. Appl. Phys 47
  
  Pages: 5330-5332
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns2008
- Author(s)
  S. Harui, H. Tamiya, T. Akagi, H. Miyake, K. Hiramatsu, T. Araki and Y. Nanishi
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 5330-5332
- NAID
  40016161747
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence2008
- Author(s)
  T. Akagi, K. Kosaka, S. Harui, D. Muto, H. Naoi, T. Araki, Y. Nanishi
- Journal Title
  
  Journal of Electronic Materials 37
  
  Pages: 603-606
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns2008
- Author(s)
  S.Harui, H.Tamiya, T.Akagi, HMiyake, Ii.Hiramatsu, T.Arakiand, Y.Nanishi
- Journal Title
  
  Jpn. J.Appl. Phys.
- NAID
  40016161747
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns2008
- Author(s)
  S. Harui, H. Tamiya, T. Akagi, H. Miyake, K. Hiramatsu, T. Araki, Y. Nanishi
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 5330-5332
- NAID
  40016161747
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Photoreflectance of InN and InN : Mg layers : An evidence for Fermi level shift to wards the valence band upon Mg doping in InN2008
- Author(s)
  R. Kudrawiec, T. Suski, J. Serafinczuk, J. Misiewicz, D. Muto, Y. Nanishi
- Journal Title
  
  Appl. Phys. Lett. 93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoiuminescence2008
- Author(s)
  T.Akagi, K.Kosaka, S.Harui, D.Muto, H.Naoi, T.Araki, Y.Nanishi
- Journal Title
  
  Journal of Electronic Materials 37
  
  Pages: 603-606
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence2008
- Author(s)
  T. Akagi, K. Kosaka, S. Harui, D. Muto, H. Naoi, T. Araki, Y. Nanishi
- Journal Title
  
  Journal of Electronic Materials 37
  
  Pages: 603-606
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns2008
- Author(s)
  S. Harui, H. Tamiya, T. Akagi, H. Miyake, K. Hiramatsu, T. Araki and Y. Nanishi
- Journal Title
  
  Jpn. J. Appl. Phys 47
  
  Pages: 330-5332
- NAID
  40016161747
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence2008
- Author(s)
  T. Akagi, K. Kosaka, S. Harui, D. Muto, H. Naoi, T. Araki, Y. Nanishi
- Journal Title
  
  J. Electronic Materials 37
  
  Pages: 603-606
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Microstructure of a-plane InN grown on r-plane Sapphire by ECR-MBE2007
- Author(s)
  S.Watanabe, Y.Kumagai, A.Tsuyuguchi, H.Na, H.Naoi, T.Araki, Y.Nanishi
- Journal Title
  
  physica status solidi (in press)
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Growth of In-rich InA1N films on(0001) sapphire by RF-MBE and their properties2007
- Author(s)
  H. Naoi, K. Fujishima, S. Takado, M. Kurouchi, D, Muto, T. Araki, H. Na, and Y. Nanishi
- Journal Title
  
  Journal of Electronic Materials 36
  
  Pages: 1313-1319
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Effect of low temperature InGaN interlayers on structural and optical properties of In-rich InGaN, J2007
- Author(s)
  H. Na, S. Takado, S. Sawada, M. Kurouchi, T. Akagi, H. Naoi, T. Araki, and Y. Nanishi
- Journal Title
  
  Cryst. Growth 300
  
  Pages: 177-181
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Growth of In-rich InAIN films on(0001) sapphire by RF-MBE and their properties2007
- Author(s)
  H.Naoi, K.Fuiishima, S.Takado, M.Kurouchi, D.Muto, T.Araki, H.Na, and Y.Nanishi
- Journal Title
  
  Journal of Electronic Materials 36
  
  Pages: 1313-1319
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Microstructure of A-plane InN grown on R-plane Sapphire by ECR-MBE2007
- Author(s)
  S. Watanabe, Y. Kumagai, A. Tsuyuguchi, H. Naoi, T. Araki, Y. Nanishi
- Journal Title
  
  phys. stat. sol.(c) 4
  
  Pages: 2556-2559
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] M.Noda, Y.Kumagai, S.Takado, D.Muto, H.Na, H.Naoi, T.Araki, Y.Nanishi2007
- Author(s)
  M.Noda, Y.Itumagai, S.Takado, D.Muto, H.Na, H.Naoi, T.Araki, Y.Nanishi
- Journal Title
  
  phvs.stat.sol.(c) 4
  
  Pages: 2560-2563
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Thermal and Chemical Stabilities of In-and N-Polar InN Surfaces2007
- Author(s)
  H.Naoi, D.Muto, T.Hioka, Y.Hayakana, A.Suzuki, T.Araki, and Y.Nanishi
- Journal Title
  
  phvs.stat.sol.(b) 224
  
  Pages: 1834-1838
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Mg-doped N-polar InN Grown by RF-MBE, Mater2007
- Author(s)
  D. Muto, H. Naoi, S. Takado, H. Na, T. Araki, and Y. Nanishi
- Journal Title
  
  Res. Soc. Symp. Proc 955
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] M. Noda, Y. Kumagai, S. Takado, D. Muto, H. Na, H. Naoi, T. Araki, Y. Nanishi2007
- Author(s)
  M. Nods, Y. Kumagai, S. Takado, D. Muto, H. Na, H. Naoi, T. Araki, Y. Nanishi
- Journal Title
  
  phys. stat. sol.(c) 4
  
  Pages: 2560-2563
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Mg-doped N-polar InN Grown by RF-MBE2007
- Author(s)
  D. Muto, H. Naoi, S. Takado, H. Na, T. Araki, and Y. Nanishi
- Journal Title
  
  Mater. Res. Soc. Symp. Proc. 955
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Microstructure of A-plane InN grown on R-plane Sapphire by ECR-MBE, phys2007
- Author(s)
  S. Watanabe, Y. Kumagai, A. Tsuyuguchi, H. Naoi, T. Araki, Y. Nanishi
- Journal Title
  
  stat. sol (c)4
  
  Pages: 2556-2559
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Role of localized donor states in transport and photoluminescence of InN revealed by hydrostatic pressure studies2007
- Author(s)
  T.Susuki, A.Kaminska, G.Franssen, H.Teisseyre, L.H.Dmowski, J.A.PlesieNicz, H.L.Lu, W.J.Schaff, M.Iiurouchi, and Y.Nanishi
- Journal Title
  
  phvs.stat.sol.(b) 224
  
  Pages: 1825-1828
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE, Mater. Res2007
- Author(s)
  T. Yamaguchi, H. Naoi, T. Araki, and Y. Nanishi
- Journal Title
  
  Soc. Symp. Proc 955
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Growth of InN nanocolumns by RF-MBE, J2007
- Author(s)
  S. Nishikawa, Y. Nakao, H. Naoi, T. Araki, H. Na, and Y. Nanishi
- Journal Title
  
  Cryst. Growth 301-302
  
  Pages: 490-495
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE2007
- Author(s)
  T.Yamaguchi, T.Araki, H.Naoi, Y.Nanishi
- Journal Title
  
  Material Research Society Symposium Proceedings 955
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Growth of In-rich InAlN films on(0001) sapphire by RF-MBE and their properties2007
- Author(s)
  H. Naoi, K. Fujishima, S. Takado, M. Kurouchi, D, Muto, T. Araki, H. Na, and Y. Nanishi
- Journal Title
  
  Journal of Electronic Materials 36
  
  Pages: 1313-1319
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Thermal and Chemical Stabilities of In-and N-Polar InN Surfaces, phys2007
- Author(s)
  H. Naoi, D. Muto, T. Hioka, Y. Hayakawa, A. Suzuki, T. Araki, and Y. Nanishi
- Journal Title
  
  stat. sol 244
  
  Pages: 1834-1838
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Mg-doped N-polar InN Grown by RF-MBE2007
- Author(s)
  D.Muto, H.Naoi, S.Takado, H.Na, T.Araki, and Y.Nanishi
- Journal Title
  
  Mater.Res.Soc.Symp.Proc 955
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Microstructure of A-plane InN grown on R-plane Sapphire by ECR-MBE2007
- Author(s)
  S.Watanabe,Y.Kumagai,A.Tsuyuguchi,H.Naoi,T.Araki,Y.Nanishi
- Journal Title
  
  phvs.stat.sol.(c) 4
  
  Pages: 2556-2559
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Effect of low-temperature InGaN interlayers on structural and optical properties of In-rich InGaN2007
- Author(s)
  H.Na, S.Takado, S.Sawada, M.Kurouchi, T.Akagi, H.Naoi, T.Araki, Y.Nanishi
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 177-181
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Mg-doped N-polar InN Grown by RF-MBE2007
- Author(s)
  D.Muto, H.Naoi, S.Takado, H.Na, T.Araki, Y.Nanishi
- Journal Title
  
  Material Research Society Symposium Proceedings 955
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Thermal and Chemical Stabilities of In-and N-Polar InN Surfaces2007
- Author(s)
  H. Naoi, D. Muto, T. Hioka, Y. Hayakawa, A. Suzuki, T. Araki, and Y. Nanishi
- Journal Title
  
  phys. stat. sol.(b) 244
  
  Pages: 1834-1838
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE2007
- Author(s)
  T.Yamaguchi, H.Naoi, T.Araki, and Y.Nanishi
- Journal Title
  
  Mater.Res.Soc.Sump.Proc 955
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Growth of a-plane (11-20) In-rich InGaN on r-plane (10-12) sapphire by RF-MBE2007
- Author(s)
  M.Noda, Y.Kumagai, S.Takado, D, Muto, H.Na, H.Naoi, T.Araki, Y.Nanishi
- Journal Title
  
  physica status solidi (in press)
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Growth of A-plane(11-20) In-rich InGaN on r-plane(10-12) sapphire by RF-MBE, phys2007
- Author(s)
  M. Noda, Y. Kumagai, S. Takado, D. Muto, H. Na, H. Naoi, T. Araki, Y. Nanishi
- Journal Title
  
  stat. sol (c)4
  
  Pages: 2560-2563
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206003
[Journal Article] Growth of InN nanocolumns by RF-MBE2007
- Author(s)
  S.Nishikawa, Y.Nakao, H.Naoi, T.Araki, H.Na, Y.Nanishi
- Journal Title
  
  Journal of Crystal Growth 301-302
  
  Pages: 490-495
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE2007
- Author(s)
  T. Yamaguchi, H. Naoi, T. Araki, and Y. Nanishi
- Journal Title
  
  Mater. Res. Soc. Symp. Proc. 955
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Journal Article] Role of localized donor states in transport and photoluminescence of InN revealed by hydrostatic pressure studies2007
- Author(s)
  T. Susuki, A. Kaminska, G. Franssen, H, Teisseyre, L.H. Dmowski, J.A. Plesiewicz, H.L. Lu, W.J. Schaff, M. Kurouchi, and Y. Nanishi
- Journal Title
  
  phys. stat. sol.(b) 244
  
  Pages: 1825-1828
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
- Place of Presentation
  Granada Spain
- Year and Date
  2011-03-17
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Organizer
  SPIE Photonic West 2011
- Place of Presentation
  San Francisco, CA USA
- Year and Date
  2011-01-24
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] TEM Study on Microstructure of Mg-doped InN Grown by RF-MBE Using DERI Method2011
- Author(s)
  T.Araki, T.Sakamoto, R.Iwamoto, T.Yamaguchi, E.Yoon, Y.Nanishi
- Organizer
  3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
- Place of Presentation
  Nagoya institute of technology, Aichi Japan
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Development of Radical Beam Monitoring Techniques in RF-MBE Growth of InN2011
- Author(s)
  T.Yamaguchi, T.Fujishima, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011)
- Place of Presentation
  Nagoya institute of technology, Aichi Japan
- Year and Date
  2011-03-07
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Organizer
  SPIE Photonic West 2011
- Place of Presentation
  サンフランシスコ(アメリカ)(招待講演)
- Year and Date
  2011-01-24
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German-Japanese-Spanish Joint Workshop
- Place of Presentation
  グラナダ(スペイン)(招待講演)
- Year and Date
  2011-03-17
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] In Situ Monitoring of InN Grown by RF-MBE2010
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  ISPlasma2010
- Place of Presentation
  名古屋(日本)
- Year and Date
  2010-03-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Various Application of DERI (Droplet Elimination by Radical-beam Irradiation) Method in Growth of RF-MBE2010
- Author(s)
  T.Yamaguchi, H.Umeda, T.Sakamoto, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  29th Electronic Materials Symposium (EMS29)
- Place of Presentation
  ラフォーレ修善寺静岡県伊豆市
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Dry etching of In-and N-polar InN using inductively-coupled plasma2010
- Author(s)
  T.Fujishima, S.Takahashi, K.Morimoto, R.Iwamoto, N.Uematsu, M.Yutani, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Mg doped InN and search for holes2010
- Author(s)
  K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J W Ager, K.M.Yu, W.Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Characterization of Contact Resistance of Ti/Al/Ti/Au Ohmic Metal on N-polar and In-polar InN Films grown by RF-MBE2010
- Author(s)
  K.Morimoto, S.Kikuchi, N.Maeda, T.Yamaguchi, Y.Nanishi
- Organizer
  29th Electronic Materials Symposium (EMS29)
- Place of Presentation
  ラフォーレ修善寺静岡県伊豆市
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Evidence of Free Holes in Mg Doped InN2010
- Author(s)
  K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, J.W.Ager, K.M.Yu, W.Walukiewicz
- Organizer
  International Symposium on Growth of III-Nitrides 2010
- Place of Presentation
  Montpellier France
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Free Hole Concentration and Mobility in InN : Mg2010
- Author(s)
  N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Japan-Korea Joint Symposium2010
- Author(s)
  Y.Nanishi
- Organizer
  Japan-Korea Joint Symposium
- Place of Presentation
  Daejeon Korea
- Year and Date
  2010-04-21
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy2010
- Author(s)
  F.J.Manjon, J.Ibanez, A.Segura, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
- Organizer
  48th European High Pressure Research Group Conference (EHPRG)
- Place of Presentation
  Uppsala Sweden
- Year and Date
  2010-07-26
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Fabrication of InN/InGaN Multi Quantum Well Structures by Droplet Elimination by Radical-Beam Irradiation2010
- Author(s)
  H.Umeda, T.Yamaguchi, T.Sakamoto, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  ISPlasma2010
- Place of Presentation
  名古屋(日本)
- Year and Date
  2010-03-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Evidence of Rectification in InN pn Junctions2010
- Author(s)
  N.Miller, J.W.Ager III, E.E.Haller, W.Walukiewicz, Ke Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Undoped and Mg-doped InN Grown Using Droplet Elimination by Radical-beam Irradiation Method2010
- Author(s)
  T.Yamaguchi, K.Wang, R.Iwamoto, N.Miller, M.Mayer, J.W.Ager III, K.M.Yu, W.Walukiewicz, T.Araki, Y.Nanishi
- Organizer
  The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
- Place of Presentation
  Beijing China
- Year and Date
  2010-05-18
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Effect of low-temperature InN buffer on A-plane InN growth on nitridated r-plane sapphire by RF-MBE2010
- Author(s)
  T.Araki, K.Kawashima, T.Yamaguchi, Y.Nanishi
- Organizer
  The 16th International Conference on Crystal Growth (ICCG16)
- Place of Presentation
  Beijing China
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] High-Pressure Optical Absorption and Raman Scattering in InN Thin Films Grown by Molecular Beam Epitaxy2010
- Author(s)
  J.Ibanez, A.Segura, F.J.Manjon, R.Cusco, L.Artus, T.Yamaguchi, Y.Nanishi
- Organizer
  2010 E-MRS Spring Meeting
- Place of Presentation
  Strasbourg France
- Year and Date
  2010-06-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Unintentional incorporation of hydrogen in InN : diffusion kinetics and effect of surface orientation2010
- Author(s)
  V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, L.Artus, D.Rogala, H.-W.Becker, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Free-Charge Carrier Properties and Doping Mechanisms of Thin Films of InN and Related Alloys2010
- Author(s)
  V.Darakchieva, M.Schubert, K.Lorenz, N.P.Barradas, E.Alves, T.Hofmann, B.Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
- Organizer
  5th International Conference on Spectroscopic Ellipsometry (ICSE-V)
- Place of Presentation
  Albany, New York USA
- Year and Date
  2010-05-27
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Raman scattering study of the temperature dependence of phonons in InN2010
- Author(s)
  N.Domenech-Amador, L.Artus, R.Cusco, J.Ibanez, T.Yamaguchi, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Hydrogen in InN : Ubiquitous Phenomena in Molecular Beam Epitaxy Grown Material2010
- Author(s)
  V.Darakchieva, K.Lorenz, N.P.Barradas, E.Alves, M.-Y.Xie, B.Monemar, M.Schubert, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.Tu, T.Yamaguchi, Y.Nanishi
- Organizer
  CIMTEC2010 (5th Forum on New Materials)
- Place of Presentation
  Montecatini Terme, Tuscany Italy
- Year and Date
  2010-06-16
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.Ager III, K.M.Yu, W.Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010
- Author(s)
  T.Araki, H.Umeda, T.Yamaguchi, T.Sakamoto, E.Yoon, Y.Nanishi
- Organizer
  22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
- Place of Presentation
  Takamatsu symbol tower, Kagawa Japan
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Investigation on InN mole fraction fluctuation in InGaN films grown by RF-MBE2010
- Author(s)
  T.Kimura, E.Fukumoto, T.Yamaguchi, K.Wang, M.Kaneko, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  International Symposium on Growth of III-Nitrides 2010
- Place of Presentation
  Montpellier France
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] InGaN Growth Using Droplet Elimination by Radical-beam Irradiation Method2010
- Author(s)
  T.Yamaguchi, K.Wang, T.Araki, E.Yoon, Y.Nanishi
- Organizer
  16th International Conference on Molecular Beam Epitaxy (MBE 2010)
- Place of Presentation
  Berlin Germany
- Year and Date
  2010-08-26
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Surface Kinetics of Indium Adlayers and Droplets and Their Roles in InN Growth by Molecular Beam Epitaxy2010
- Author(s)
  K.Wang, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Research Activities in Japan toward Nitride Semiconductor Opto-electronics Frontier2010
- Author(s)
  Y.Nanishi
- Organizer
  Korea Optoelectronic Engineering Society
- Place of Presentation
  Seoul Korea
- Year and Date
  2010-10-08
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010
- Author(s)
  Y.Nanishi, T.Yamaguchi, K.Wang, T.Araki, M.Kaneko, E.Yoon, N.Miller, J.W.Ager III, K.M.Yu, W.Walukiewicz
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  タンパ(アメリカ)(基調講演)
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth and Characterization of InN-Related Materials2010
- Author(s)
  Y.Nanishi
- Organizer
  Rainbow Second Training Workshop
- Place of Presentation
  Madrid Spain
- Year and Date
  2010-08-31
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Wet Etching Process for InN Device Fabrication2010
- Author(s)
  A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  The International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Optical Hall Effect in InN : Bulk Doping Mechanism and Surface Electron Accumulation Properties2010
- Author(s)
  V.Darakchieva, M.Schubert, T.Hofmann, Monemar, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W Tu, T.Yamaguchi, Y.Nanishi
- Organizer
  PLCN10
- Place of Presentation
  Cuernavaca Mexico
- Year and Date
  2010-04-12
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure2010
- Author(s)
  T.Yamaguchi, Y.Nanishi
- Organizer
  2010 International Coference on Solid State Devices and Materials
- Place of Presentation
  Tokyo Univ, Japan
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Wet Etching by KOH for InN Device Fabrication2010
- Author(s)
  A.Miki, K.Morimoto, N.Maeda, T.Yamaguchi, T.Araki, Y.Nanishi
- Organizer
  29th Electronic Materials Symposium (EMS29)
- Place of Presentation
  ラフォーレ修善寺静岡県伊豆市
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Nano-Photonics2010
- Author(s)
  Y.Nanishi
- Organizer
  3rd GIST Information and Mechatronics Week 2010
- Place of Presentation
  Seoul Korea
- Year and Date
  2010-12-02
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth, Monitoring and InN/InGaN MQW Structure Fabrication by DERI Method2010
- Author(s)
  Y.Nanishi, T.Yamaguchi
- Organizer
  IX International Conference of Polish Society for Crystal Growth
- Place of Presentation
  Gdansk-Sobieszewo Poland
- Year and Date
  2010-05-25
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth, Monitoring, P-type doping and MQW Structure Fabrication by DERI Method2010
- Author(s)
  Y.Nanishi
- Organizer
  The international worskshop on modern and advanced phenomena in wurtzite semiconductors
- Place of Presentation
  Montpellier France
- Year and Date
  2010-07-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Potential, Present Status and Future Challenges of InN and Related Alloys for Device Applications2010
- Author(s)
  Y.Nanishi, T.Yamaguchi, E.Yoon
- Organizer
  The second LED domestic conference
- Place of Presentation
  Seoul Korea
- Year and Date
  2010-08-25
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Electronic Materials Conference 2010 (EMC2010)2010
- Author(s)
  K.Wang, R.Iwamoto, T.Yamaguchi, K.Kagawa, T.Araki, Y.Nanishi, N.Miller, M.Mayer, W.Walukiewicz
- Organizer
  Electronic Materials Conference 2010 (EMC2010)
- Place of Presentation
  Notre Dame, Indiana, USA
- Year and Date
  2010-06-25
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Forty years research toward compound semiconductor frontiers-Tributary road from GaAs to InN through GaN-2010
- Author(s)
  Y.Nanishi
- Organizer
  29th Electronic Materials Symposium (EMS29)
- Place of Presentation
  ラフォーレ修善寺静岡県伊豆市
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Raman Scattering by LO-Phonon-Plasmon Coupled Modes in InN Epilayers : Dependence on the Excitation Laser Intensity and Wavelength2009
- Author(s)
  R.Cusco, J.Ibanez, E.Alarcon-Llado, T.Yamaguchi, Y.Nanishi, L.Artus
- Organizer
  2009 MRS Fall Meeting
- Place of Presentation
  ボストン(アメリカ)
- Year and Date
  2009-12-01
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Simple and Reproducible Growth of High-Quality InN by DERI2009
- Author(s)
  T.Yamaguchi, R.Iwamoto, N.Maeda, T.Araki, Y.Nanishi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth and Characterization of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  Y. Nanishi, T. Araki
- Organizer
  PDI Topical workshop on MBE-grown Nitride Nanowires
- Place of Presentation
  Berlin, Germany
- Year and Date
  2009-03-05
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Organizer
  SPIE International Symposium on Integrated Optoelectronic Devices 2009
- Place of Presentation
  San Jose Convention Center (San Jose, USA)
- Year and Date
  2009-01-27
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE Growth and Characterization of M-Plane InN on LiAlO2 with C-Plane Phase Inclusion2009
- Author(s)
  T.Araki, H.Nozawa, Y.Takagi, A.Takeda, T.Sakamoto, K.Kagawa, T.Yamaguchi, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Polarized Photoluminescence from Nonpolar InN Films2009
- Author(s)
  K.Wang, T.Yamaguchi, K.Kawashima, Y.Takagi, T.Araki, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Hydorogen in InN2009
- Author(s)
  V.Darakchieva, K.Lorenz, N. P.Barradas, E.Alves, M.-Y.Xie, B.Monemar, M.Schubert, W.J.Schaff, C.L.Hsiao, L.C.Chen, L.W.Tu, Y. Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors (ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Proposal of New InN Growth Method by MBE and Usefulness of This Method as Nitrogen Radical Beam Monitoring2009
- Author(s)
  Y. Nanishi, T. Yamaguchi
- Organizer
  First International Symposium on Advanced Plasma Science and its Applications (ISPlasma 2009)
- Place of Presentation
  Nagoya University
- Year and Date
  2009-03-10
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Observation of Surface Potential on Polar and Nonpolar InN by Kelvin-Probe Force Microscopy2009
- Author(s)
  M.Kaneko, Y.Takagi, K.Kawashima, T.Yamaguchi, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-23
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Raman Scattering and Phonon-Plasmon Coupled Modes in InN : a Free-Electron Density Study2009
- Author(s)
  R.Cusco, E., Alarcon-Llado, J.Ibanez, T.Yamaguchi, Y.Nanishi, L.Artus
- Organizer
  E-MRS 2009 Spring Meeting(European Materials Research Society Spring Meeting)
- Place of Presentation
  ストラスブルグ(フランス)
- Year and Date
  2009-06-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Present Status and New Challenges of Nitride Semiconductors for Advanced Electronic Devices2009
- Author(s)
  Y.Nanishi, T.Yamaguchi
- Organizer
  2009 E-MRS Fall Meeting
- Place of Presentation
  ワルシャワ(ポーランド)(招待講演)
- Year and Date
  2009-09-16
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Influence of Defects, Dopants and Surface Orientation on Free Carrier Properties of InN2009
- Author(s)
  V.Darakchieva, M.Schubert, E.Alves, K.Lorenz, M.-Y.Xie, T.Hofmann, W.J.Schaff, L.C.Chen, L.W.Tu, Y.Nanishi
- Organizer
  2009 E-MRS Fall Meeting
- Place of Presentation
  ワルシャワ(ポーランド)
- Year and Date
  2009-09-15
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Proposal of Droplet Elimination Process by Radical Beam Irradiation for Reproducible Growth of High-quality InN and InGaN2009
- Author(s)
  T.Yamaguchi, A.Uedono, T.Suski, Y.Nanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Potential and Challenges of InN and Related Alloys for Advanced Electronic Devices2009
- Author(s)
  Y.Nanishi, N.Maeda, T.Yamaguchi, M.Kaneko
- Organizer
  67th Device Research Conference
- Place of Presentation
  ペンシルバニア(アメリカ)
- Year and Date
  2009-06-23
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth and Characterization of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  Y. Nanishi, T. Araki
- Organizer
  PDI Topical workshop on MBE-grown Nitride Nanowires
- Place of Presentation
  Berlin, Germany
- Year and Date
  2009-03-05
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
- Organizer
  The 4th Asia-Pacific Workshop on Wide gap Semiconductors(APWS2009)
- Place of Presentation
  張家界(中国)
- Year and Date
  2009-05-26
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Structural Anisotropy and Free Electron Properties of a-Plane InN2009
- Author(s)
  V.Darakchieva, N.Franco, M.Schubert, B.Monemar, C.-L.Hsiao, T.-W Liu, L.-C.Chen, D.Muto, Y.Nanishi
- Organizer
  E-MRS 2009 Spring Meeting(European Materials Research Society Spring Meeting)
- Place of Presentation
  ストラスブルグ(フランス)
- Year and Date
  2009-06-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Proposal of New InN Growth Method by MBE and Usefulness of This Method as Nitrogen Radical Beam Monitoring2009
- Author(s)
  Y. Nanishi and T. Yamaguchi
- Organizer
  First International Symposium on Advanced Plasma Science and its Applications (ISPlasma 2009)
- Place of Presentation
  Nagoya University
- Year and Date
  2009-03-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Photoluminescence and Raman Spectroscopy Study of InN Films Grown by RF-MBE2009
- Author(s)
  K.Wang, T.Yamaguchi, A.Takeda, D.Muto, M.Kaneko, T.Araki, Y.Nanishi
- Organizer
  第1回窒化物半導体結晶成長講演会(Post-ISGN2)
- Place of Presentation
  東京農工大学(小金井市)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Fabrication of Position-Controlled InN Nanocolumns by ECR-MBE2009
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Organizer
  SPIE International Symposium on Integrated Optoelectronic Devices 2009
- Place of Presentation
  San Jose Convention Center(San Jose, USA)
- Year and Date
  2009-01-27
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Structural Characterization of M-Plane InN Grown on LiAlO2 Substrate with C-Plane Phase Inclusion2009
- Author(s)
  T.Araki, H.Nozawa, Y.Takagi, A.Takeda, K.Kagawa, T.Yamaguchi, Y.Nanishi
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  ラフォーレ琵琶湖(守山市)
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Photoexcited Carriers in InN Layers Observed by Raman Scattering2009
- Author(s)
  R.Cusco, E.Alarcon-Llado, J.Ibanez, T.Yamaguchi, Y.Nanishi, L.Artus
- Organizer
  The 8th International Conference on Nitride Semiconductors(ICNS 2009)
- Place of Presentation
  チェジュ(韓国)
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Fabrication and Electrical Characterization of InN MES and MIS Diode Structures2008
- Author(s)
  S. Kikuchi, T. Sato, A. Hinoki, D. Muto, N. Maeda, T. Araki Y. Nanishi
- Organizer
  27th Electronic Materials Symposium (EMS27)
- Place of Presentation
  ラフォーレ修善寺(静岡県伊豆市)
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Recent Progress of InN and InGaN Growth for Device Applications2008
- Author(s)
  Y.Nanishi, T.Araki, T.Yamaguchi, D.Muto
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  モントルー(スイス)(招待講演)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Photoreflectance and contactless electroreflectancc investigations of the energy gap and band bending for un-doped and Mg-doped InN layers2008
- Author(s)
  R. Kudrawiec, J. Misiewicz, T. Suski, D. Muto, Y. Nanishi
- Organizer
  XXXVII International School on the Physics of Semiconducting Compounds "Jaszowiec 2008"
- Place of Presentation
  Gwarek Hotel (Poland)
- Year and Date
  2008-06-07
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] GaN and InN intermixing during RF-MBE growth observed by XRD2008
- Author(s)
  D. Muto, T. Yamaeuchi, S. Sawada, T. Araki, Y. Nanishi
- Organizer
  2008Electronic Materials Conference
- Place of Presentation
  University of California (Santa Barbara, USA)
- Year and Date
  2008-06-26
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] TEM Characterization of M-plane InN Grown on (100) LiAlO_2 Substrate by RF-MBE2008
- Author(s)
  H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzeland)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Photoreflectance and contactless electroreflectance investigations of the energy gap and band bending for un-doped and Mg-doped InN layers2008
- Author(s)
  R. Kudrawiec, J. Misiewicz, T. Suski, D. Muto, and Y. Nanishi
- Organizer
  XXXVII International School on the Physics of Semiconducting Compounds "Jaszowiec 2008"
- Place of Presentation
  Gwarek Hotel (Poland)
- Year and Date
  2008-06-07
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Potential, Achievements and Issues of InN and Related Alloys for Device Applications2008
- Author(s)
  Y. Nanishi, D. Muto, M. Noda, S. Harui, T. Yamaguchi, T. Araki
- Organizer
  International Conference on Optical, Optoelectronic and Photonic Materials Applications 2008 (ICOOPMA08)
- Place of Presentation
  Edmonton, Canada
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] New insight into the free carrier properties of InN2008
- Author(s)
  V. Darakchieva, T. Hofmann, M. Schubert, B. Monemar, H. Lu, W. J. Schaff, C. -L. Y. Hsiao, T. -W. Liu, L. -C. Chen, D. Muto, Y. Nanishi
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzeland)
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] RF-MBE Growthand Properties of Mg-doped Polar and Non-PoIar InN and In-rich InGaN2008
- Author(s)
  Y.Nanishi
- Organizer
  Topical Workshop on achieving p-type InN
- Place of Presentation
  The Prince HakoneJ(Hakoneapan)
- Year and Date
  2008-03-04
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Growth and characterization of N-polar and In-polar InN films by RF-MBE2008
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, Y. Nanishi
- Organizer
  The Second International Symposium on Growth of III-Nitrides (ISGN-2)
- Place of Presentation
  Laforet Shuzenji (Japan)
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Study on Initial Growth Process of Position-Controlled InN Nanocolumns by ECR-MBE2008
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Organizer
  The Second International Symposium on Growth of III-Nitrides (ISGN-2)
- Place of Presentation
  Laforet Shuzenji(静岡県)
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress of InN and InGaN Growth for Device Applications2008
- Author(s)
  Y. Nanishi, T. Araki, T. Yamaguchi, D. Muto
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux, Switzerland
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Recent Progress of InN and InGaN Growth for Device Applications (Invited)2008
- Author(s)
  Y. Nanishi, T. Araki, T. Yamaguchi, D. Muto
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzeland)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Study on Initial Growth Process of Position-Controlled InN Nanocolumns by ECR-MBE2008
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Organizer
  The Second International Symposium on Growth of III-Nitrides (ISGN-2)
- Place of Presentation
  Laforet Shuzenji (Japan)
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Potential, Achievements and Issues of InN and Related Alloys for Device Applications (Invited), International Conference on Optical2008
- Author(s)
  Y. Nanishi, D. Muto, M. Noda, S. Harui, T. Yamaguchi, T. Araki
- Organizer
  Optoelectronic and Photonic Materials Applications 2008 (ICOOPMA08)
- Place of Presentation
  Edmonton, Canada
- Year and Date
  2008-07-23
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] RF-MBE Growth and Properties of Mg-doped Polar and Non-polar InN and In-rich InGaN2008
- Author(s)
  Y. Nanishi
- Organizer
  Topical Workshop on achieving p-type InN
- Place of Presentation
  The Prince Hakone (Hakone, Japan)
- Year and Date
  2008-03-04
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE Growth and Properties of Mg-doped Polar and Non-polar InN and In-rich InGaN2008
- Author(s)
  Y. Nanishi
- Organizer
  Topical Workshop on achieving p-type InN
- Place of Presentation
  The Prince Hakone (Hakone, Japan)
- Year and Date
  2008-03-04
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Recent Progress of InN and InGaN Growth for Device Applications (Invited)2008
- Author(s)
  Y. Nanishi, T. Araki, T. Yamaguchi, D. Muto
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzerland)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Potential, Achievements and Issues of InN and Related Alloys for Device Applications (Invited)2008
- Author(s)
  Y. Nanishi, D. Muto, M. Noda, S. Harui, T. Yamaguchi, T. Araki
- Organizer
  International Conference on Optical, Optoelectronic and Photonic Materials Applications 2008 (ICOOPMA 08)
- Place of Presentation
  University of ALBERTA (EDMONTON, CANADA)
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth and structura investigation of high-In-com Position InGaN/GaN Nanostructure2008
- Author(s)
  T.Yamaguchi, A.Pretorius, A.Rosenauer, D.Hommel, T.Araki, and Y.Nanishi
- Organizer
  Workshop on Frontie Photonic and Electronic Materials and Devices-2008 JaPanese-German-SPanishpoint Workshop-
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-05
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Growth of M-plane(10-10) InN on LiAlO_2 (100) Substrate2008
- Author(s)
  Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzeland)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Recent Progress of InN and In GaN Growth for Device Applications (Invited)2008
- Author(s)
  Y. Nanishi, T. Araki, T. Yamaguchi, D. Muto
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Fabrication and Electrical Characterization of InN MES and MIS Diode Structures2008
- Author(s)
  S. Kikuchi, T. Sato, A. Hinoki, D. Muto, N. Maeda, T. Araki, and Y. Nanishi
- Organizer
  27th Electronic Materials Symposium (EMS27)
- Place of Presentation
  ラフォーレ修善寺
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] TEM Characterization of M-plane InN Grown on (100) LiAlO_2 Substrate by RF-MBE2008
- Author(s)
  H. Nozawa, Y. Takagi, S. Harui, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzerland)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Novel InN growth method under In-rich condition on GaN/Al2O3(0001) templates2008
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, N. Maeda, and Y. Nanishi
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzerland)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] RF-MBE Growth and Properties of Mg-doped Polar and Non-polar InN and In-rich InGaN (Invited)2008
- Author(s)
  Y. Nanishi
- Organizer
  Topical Workshop on achieving p-type InN
- Place of Presentation
  Hakone, Japan
- Year and Date
  2008-03-04
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Growth of Position-Controlled InN Nanocolumns by ECR-MBE on Hole-Patterned GaN Template2008
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Organizer
  27th Electronic Materials Symposium (EMS27)
- Place of Presentation
  ラフォーレ修善寺(静岡県伊豆市)
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth of Position-Controlled InN Nanocolumns by ECR-MBE on Hole-Pattemed GaN Template2008
- Author(s)
  T. Araki, D. Fukuoka, H. Tamiya, S. Harui, T. Yamaguchi, H. Miyake, K. Hiramatsu, Y. Nanishi
- Organizer
  27th Electronic Materials Symposium (EMS27)
- Place of Presentation
  ラフォーレ修善寺(静岡県伊豆市)
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] New insight into the free carrier properties of InN2008
- Author(s)
  V. Darakchieva, T. Hofmann, M. Schubert, B. Monemar, H. Lu, W. J. Schaff, C.-L.Y. Hsiao, T.-W. Liu, L.-C. Chen, D. Muto, Y. Nanishi
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzerland)
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth and characterization of N-polar and In-polar InN films by RF-MBE2008
- Author(s)
  T. Yamaguchi, D. Muto, T. Araki, and Y. Nanishi
- Organizer
  The Second International Symposium on Growth of III-Nitrides (ISGN-2)
- Place of Presentation
  Laforet Shuzenji(静岡県)
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth and structural investigation of high-In-composition InGaN/GaN Nanostructures2008
- Author(s)
  T. Yamaguchi, A. Pretorius, A. Rosenauer, D. Hommel, T. Araki, and Y. Nanishi
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices -2008 Japanese-German-Spanish joint Workshop-
- Place of Presentation
  The Prince Hakone (Hakone, Japan)
- Year and Date
  2008-03-05
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Potential, Achievements and Issues of InN and Related Alloys for Device Applications (Invited)2008
- Author(s)
  Y. Nanishi, D. Muto, M. Noda, S. Harui, T. Yamaguchi, T. Araki
- Organizer
  International Conference on Optical, Optoelectronic and Photonic Materials Applications 2008 (ICOOPMA08)
- Place of Presentation
  University of ALBERTA (EDMONTON, CANADA)
- Year and Date
  2008-07-23
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] GaN and InN intermixing during RF-MBE growth observed by XRD2008
- Author(s)
  D. Muto, T. Yamaguchi, S. Sawada, T. Araki, and Y. Nanishi
- Organizer
  2008Electronic Materials Conference
- Place of Presentation
  University of California (Santa Barbara, USA)
- Year and Date
  2008-06-26
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growth of M-plane(10-10) InN on LiAlO_2(100) Substrate2008
- Author(s)
  Y. Takagi, D. Muto, T. Yamaguchi, T. Araki, Y. Nanishi
- Organizer
  International Workshop on Nitride semiconductors (IWN2008)
- Place of Presentation
  Montreux Convention Center (Switzerland)
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Electrical Properties of P-type N-polar InN Grown by RF-MBE2007
- Author(s)
  D. Muto, H. Naoi, S. Fukumoto, K. M. Yu, N. Miller, R. E. Jones, J. W. Ager III, E. E. Haller, T. Araki, Y. Nanishi, and W. Walukiewicz
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Study on ECR-MBE Growth and Properties of A-plane InN on R-plane Sapphire2007
- Author(s)
  T.Araki, Y.Iiumagai, S.Watanabe, T.Akagi, H.Naoi, Y.Nanishi
- Organizer
  International Conference on Crystal Growth (ICCG15)
- Place of Presentation
  Grand America and Little America hotels(SaltLake City,USA)
- Year and Date
  2007-08-13
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Study on surface electron accumulation on A-plane InN by electrolyte-based capacitance-voltage measurements2007
- Author(s)
  M. Nods, S. Fukumoto, D. Muto, K. M. Yu, N. Miller, R. E. Jones, J. W. Ager III, E. E. Haller, H. Naoi, T. Araki, Y. Nanishi and W. Walukiewicz
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  MGM GRAND HOTEL (Las Vegas, USA)
- Year and Date
  2007-09-20
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Study on surface electron accumulation on A-plane InN by electrolyte-basedcapacitance-voltage measurements2007
- Author(s)
  M.Noda, S.Fukumoto, D.Muto, k.M.Yu, N.Miller, R.E.Jones, J.W.AltermI, E.E.Haller, H.Naoi, T.Araki, Y.Nanishi and W.Walukiewicz
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  MGM GRAND HOTEL(Las Vegas,USA)
- Year and Date
  2007-09-20
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Growth of InN hexagonal pyramids on hole-patterned GaN templates by ECR-MBE2007
- Author(s)
  D. Fukuoka, T. Yamaguchi, S. Harui, T. Akagi, K. Hiramatsu, H. Miyake, H. Naoi, T. Araki, and Y. Nanishi
- Organizer
  International Conference on Crystal Growth(ICCG15)
- Place of Presentation
  Grand America and Little America hotels(Salt Lake City, USA)
- Year and Date
  2007-08-13
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Study on ECR-MBE Growth and Properties of A-plane InN on R-plane Sapphire2007
- Author(s)
  T. Araki, Y. Kumagai, S. Watanabe, T. Akagi. H. Naoi, Y. Nanishi
- Organizer
  International Conference on Crystal Growth(ICCG15)
- Place of Presentation
  Grand America and Little America hotels(Salt Lake City, USA)
- Year and Date
  2007-08-13
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Polar and Non-polar Growth of InN and InGaN2007
- Author(s)
  Y. Nanishi, H. Naoi, D. Muto, T. Hioka, Y. Hayakawa, Y. Kumagai, M. Noda, and T. Araki
- Organizer
  The 3rd Asia-Pacific Workshop on Widegap Semiconductors(APWS 2007)
- Place of Presentation
  Jeonju, Korea
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Infrared Cathodoluminescence measurements of InN films2007
- Author(s)
  T.Akagi, k.kosaka, S.Harui, H.Naoi, T.Araki, Y.Nanishi
- Organizer
  TMS 2007 ELECTRONIC MATERIALS CONFERENCE
- Place of Presentation
  University of Notre Dame(Indiana,USA)
- Year and Date
  2007-06-21
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Fabrication of patterned InN nano-columns by ECR-MBE2007
- Author(s)
  T. Araki, T. Yamaguchi, S. Harui, H. Miyake, K. Hiramatsu, Y. Nanishi
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  MGM GRAND HOTEL (Las Vegas, USA)
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Growthof InN hexagonal pyramids on hole-patterned GaN templates by ECR-MBE2007
- Author(s)
  D.Fukuoka, T.Yamaguchi, S.Harui, T.Akagi, K.Hiramatsu, H.Miyake, H.Naoi, T.Araki, and Y.Nanishi
- Organizer
  International Conference on Crystal Growth (ICCG15)
- Place of Presentation
  Grand America and Little America hotels(SaltLake City,USA)
- Year and Date
  2007-08-13
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Infrared Cathodoluminescence measurements of InN films2007
- Author(s)
  T. Akagi, K. Kosaka, S. Harui, H. Naoi, T. Araki. Y. Nanishi
- Organizer
  TMS 2007 ELECTRONIC MATERIALS CONFERENCE
- Place of Presentation
  University of Notre Dame(Indiana, USA)
- Year and Date
  2007-06-21
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Electrical Properties of P-type N-polar InN Grown by RF-MBE2007
- Author(s)
  D.Muto, H.Naoi, S.Fukumoto, K.M.Yu, N.Miller, R.E.Jones, J.W.AltermI, E.E.Haller, T.Araki, Y.Nanishi, and W.Walukiewicz
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  MGM GRAND HOTEL(Las Vegas,USA)
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] TEM Characterization of position-controlled InN nanocolumns2007
- Author(s)
  S. Harui, H. Tamiya, T. Araki, H. Miyake, K. Hiramatsu, T. Araki, Y. Nanishi
- Organizer
  2007 MRS Fall MEETING
- Place of Presentation
  Hypes Convention Center & Sheraton Boston Hotel (Boston, MA, USA)
- Year and Date
  2007-11-27
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Electrical Properties of P-type N-polar InN Grown by RF-MBE2007
- Author(s)
  D. Muto, H. Naoi, S. Fukumoto, K. M.Yu, N. Miller, R. E. Jones, J. W. Ager III, E. E. Haller, T. Araki, Y. Nanishi, and W. Walukiewicz
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  MGM GRAND HOTEL (Las Vegas, USA)
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] Study on Growth of Mg-doped InN by RF-MBE and its Electrical Properties2007
- Author(s)
  D. Muto, H. Naoi, S. Takado, T. Araki, and Y. Nanishi
- Organizer
  The 19th Indium Phosphide and Related Materials Conference(IPRM2007)
- Place of Presentation
  Kunibiki Messe(Matsue, Japan)
- Year and Date
  2007-05-15
- Data Source
  KAKENHI-PLANNED-18069012
[Presentation] TEM Characterization of position-controlled InN nanocolumns2007
- Author(s)
  S.Harui, H.Tamiya, T.Araki, H.Mivake, K.Hiramatsu, T.Araki, Y.Nanishi
- Organizer
  2007 MRS Fall MEETING
- Place of Presentation
  Hynes Convention Center&Sheraton Boston Hotel(Boston,MA,USA)
- Year and Date
  2007-11-27
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Study on Growth of Mg-doped InN by RF-MBE and its Electrical Properties2007
- Author(s)
  D.Muto, H.Naoi, S.Takado, T.Araki, and Y.Nanishi
- Organizer
  The 19th Indium Phosphide and Related Materials Conference (IPRM2007)
- Place of Presentation
  kunibiki Messe(Matsue,Japan)
- Year and Date
  2007-05-15
- Data Source
  KAKENHI-PROJECT-18206003
[Presentation] Fabrication of patterned InN nano-columns by ECR-MBE2007
- Author(s)
  T.Araki, T.Yamaguchi, S.Harui, H.Miyake, K.Hiramatsu, Y.Nanishi
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  MGM GRAND HOTEL(Las Vegas,USA)
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PROJECT-18206003

1. YAMAGUCHI Tomohiro (50454517)

# of Collaborated Projects: 3 results

# of Collaborated Products: 124 results
2. NANISHI Yasushi (40268157)

# of Collaborated Projects: 2 results

# of Collaborated Products: 196 results
3. ARAKI Tsutomu (20312126)

# of Collaborated Projects: 2 results

# of Collaborated Products: 141 results
4. NAOI Hiroyuki (10373101)

# of Collaborated Projects: 2 results

# of Collaborated Products: 44 results
5. KANEKO Masamitsu (70374709)

# of Collaborated Projects: 2 results

# of Collaborated Products: 7 results
6. WANG Ke (60532223)

# of Collaborated Projects: 2 results

# of Collaborated Products: 23 results
7. AOYAGI Yoshinobu (70087469)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

HYUNSEOK Na

NA Hyunseok

Research Projects

Research Products

Co-Researchers

RF-MBE Growth of InN and Related Alloys and Fabrication of Quantum Nanostructure

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of advanced RF-MBE growth for InN and related alloys and control of their optoelectronic properties

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Book] Chapter 1-Molecular-beam epitaxy of InN, Editors : T. D. Veal, C. F. McConville, and W. J. Schaff, CRC Press/Taylor and Francis(in press)2009

Author(s)

Publisher

Data Source

[Book] Chapter : 1-Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys (Editors : T.D.Veal, C.F.McConville, and W.J.Schaff)2009

Author(s)

Total Pages

Publisher

Data Source

[Book] Chapter: 1 - Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys2009

Author(s)

Data Source

[Book] "Indium Nitride and Related Alloys" Chapter I Molecular-Beam Epitaxy of InN(edited by T.D.Veal, C.F.McConville, and W.J.Schaff)2009

Author(s)

Publisher

Data Source

[Journal Article] Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure2011

Author(s)

Journal Title

NAID

Data Source

[Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2011

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Application of Droplet Elimination Process by Radical -Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure2011

Author(s)

Journal Title

NAID

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[Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011

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Journal Title

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[Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011

Author(s)

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[Journal Article] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011

Author(s)

Journal Title

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[Journal Article] Electronic Structure of Wurtzite and Rocksalt InN Investigated by Optical Absorption under Hydrostatic Pressure2010

Author(s)

Journal Title

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[Journal Article] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology2010

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[Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010

Author(s)

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[Journal Article] RF-MBE Growth of InN/InGaN MQW Structures by DERI and Their Characterization2010

Author(s)

Journal Title

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[Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010

Author(s)

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