Takeuchi Ken 竹内健

… Alternative Names

竹内健タケウチケン

TAKEUCHI Ken 竹内健

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Researcher Number	80463892
Other IDs
Affiliation (Current)	2025: 東京大学, 大学院工学系研究科(工学部), 教授
Affiliation (based on the past Project Information) *help	2025: 東京大学, 大学院工学系研究科(工学部), 教授 2020 – 2023: 東京大学, 大学院工学系研究科(工学部), 教授 2014 – 2018: 中央大学, 理工学部, 教授 2012: 中央大学, 理工学部・電気電子情報通信工学科, 教授 2011: 中央大学, 理工学部, 教授 2008 – 2010: The University of Tokyo, 大学院・工学系研究科, 准教授
Review Section/Research Field	Principal Investigator Basic Section 60040:Computer system-related / Electron device/Electronic equipment / Sections That Are Subject to Joint Review: Basic Section60040:Computer system-related , Basic Section60090:High performance computing-related / Basic Section 60090:High performance computing-related
Keywords	Principal Investigator 不揮発性メモリ / AI / 3次元LSI / フラッシュメモリ / メモリ / 集積回路 / CiM / ニューラルネットワーク / メモリシステム / Stochastic Resonance … More / 機械学習 / Summing Network / ナノメモリデバイス / ハイパフォーマンスコンピューテイング / ハイパフォーマンスコンピューティング / 情報システム / マイクロナノデバイス / データストレージ / 電子デバイス / 低電圧動作 / 電源回路 / 新機能材料 / 3次元集積回路 / ナノデバイス / アダプティブ / ナノスケール / CMOS / 不揮発メモリ / 強誘電体 / 低消費電力 / 電源 / 3次元 LSI / SSD Less

Research Projects
(4 results)
Research Products
(138 results)

デバイス・回路・エッジAIアルゴリズム融合による極低電力ハイブリッドCiMの研究Principal Investigator
- Principal Investigator
  
  竹内健
- Project Period (FY)
  2025 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 60040:Computer system-related
  Basic Section 60090:High performance computing-related
  Sections That Are Subject to Joint Review: Basic Section60040:Computer system-related , Basic Section60090:High performance computing-related
- Research Institution
  The University of Tokyo
ハードソフト連携・精緻な電子制御による不揮発性メモリシステムのエラー最小化の研究Principal Investigator
- Principal Investigator
  
  竹内健
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 60040:Computer system-related
- Research Institution
  The University of Tokyo
Research on integrated circuit system with new nano-materials for real-time big-data processingPrincipal Investigator
- Principal Investigator
  
  Takeuchi Ken
- Project Period (FY)
  2014 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Chuo University
Research on 3D-integrated Silicon Nano LSI SystemPrincipal Investigator
- Principal Investigator
  
  TAKEUCHI Ken
- Project Period (FY)
  2008 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Chuo University
  The University of Tokyo

[Book] Inside Solid State Drives (SSDs)2012
- Author(s)
  Ken Takeuchi
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-20360152
[Journal Article] Stochastic Resonance Modeling of Floating Gate-based Neurons in Summing Networks for Accurate and Energy Efficient Operations2024
- Author(s)
  Akira Goda, Chihiro Matsui and Ken Takeuchi
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 71 Issue: 3 Pages: 1737-1744
- DOI
  10.1109/ted.2024.3354231
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H04159
[Journal Article] Heterogeneous Integration of Precise and Approximate Storage for Error-Tolerant Workloads2023
- Author(s)
  Chihiro Matsui and Ken Takeuchi
- Journal Title
  
  IEICE Trans. Fundamentals
  
  Volume: E106.A Issue: 3 Pages: 491-503
- DOI
  10.1587/transfun.2022VLP0001
- ISSN
  0916-8508, 1745-1337
- Year and Date
  2023-03-01
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H04159
[Journal Article] A Stochastic Leaky-Integrate-and-Fire Neuron Model With Floating Gate-Based Technology for Fast and Accurate Population Coding2022
- Author(s)
  Akira Goda, Chihiro Matsui and Ken Takeuchi
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 10 Pages: 861-869
- DOI
  10.1109/jeds.2022.3206317
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H04159
[Journal Article] Adaptive Comparator Bias-Current Control of 0.6 V Input Boost Converter for ReRAM Program Voltages in Low Power Embedded Applications2016
- Author(s)
  Tomoya Ishii, Sheyang Ning, Masahiro Tanaka, Kota Tsurumi and Ken Takeuchi
- Journal Title
  
  IEEE J. of Solid-State Circuits
  
  Volume: 51 Pages: 2389-2397
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289110
[Journal Article] Memory System Architecture for the Data Centric Computing2016
- Author(s)
  Ken Takeuchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- NAID
  210000146262
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289110
[Journal Article] 0.6-1.0 V Operation Set/Reset Voltage (3V) Generator for 3D-integrated ReRAM and NAND flash Hybrid Solid-State Drive2016
- Author(s)
  Masahiro Tanaka, Shogo Hachiya, Tomoya Ishii, Sheyang Ning, Kota Tsurumi and Ken Takeuchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289110
[Journal Article] Reset-Check-Reverse-Flag Scheme on NRAM with 50% Bit Error Rate or 35% Parity Overhead and 16% Decoding Latency Reductions for Read-Intensive Storage Class Memory2016
- Author(s)
  Sheyang Ning, Tomoko Ogura Iwasaki, Shuhei Tanakamaru, Darlene Viviani, Henry Huang, Monte Manning, Thomas Rueckes and Ken Takeuchi
- Journal Title
  
  IEEE J. of Solid-State Circuits
  
  Volume: 51 Pages: 1938-1951
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289110
[Journal Article] Carbon Nanotube Memory Cell Array Program Error Analysis and Tradeoff between Reset Voltage and Verify Pulses2016
- Author(s)
  Sheyang Ning, Tomoko Ogura Iwasaki, Shogo Hachiya, Glen Rosendale, Monte Manning, Darlene Viviani, Thomas Rueckes and Ken Takeuchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- NAID
  210000146314
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289110
[Journal Article] Understanding Relation Between Performance and Reliability of NAND Flash / SCM Hybrid Solid-State Drive (SSD)2015
- Author(s)
  Shuhei Tanakamaru, Shogo Hosaka, Koh Johguchi, Hirofumi Takishita and Ken Takeuchi
- Journal Title
  
  IEEE Transactions on VLSI Systems
  
  Volume: 99 Pages: 1-12
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289110
[Journal Article] Design Guidelines of Storage Class Memory Based Solid-State Drives to Balance Performance, Power, Endurance and Cost2015
- Author(s)
  Takahiro Onagi, Chao Sun and Ken Takeuchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54
- NAID
  210000144992
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289110
[Journal Article] Array-level Stability Enhancement of 50nm AlxOy ReRAM2015
- Author(s)
  Tomoko Ogura Iwasaki, Sheyang Ning, Hiroki Yamazawa and Ken Takeuchi
- Journal Title
  
  Solid-State Electronics
  
  Volume: 114 Pages: 1-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289110
[Journal Article] 50 nm AlxOy ReRAM program 31% energy, 1.6× endurance, and 3.6× speed improvement by advanced cell condition adaptive verify-reset2015
- Author(s)
  Sheyang Ning, Tomoko Ogura Iwasaki and Ken Takeuchi
- Journal Title
  
  Solid-State Electronics
  
  Volume: 103 Pages: 64-72
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289110
[Journal Article] Advanced Error-Prediction LDPC with temperature compensation for Highly Reliable SSDs2015
- Author(s)
  Tsukasa Tokutomi, Shuhei Tanakamaru, Tomoko Ogura Iwasaki and Ken Takeuchi
- Journal Title
  
  Solid-State Electronics
  
  Volume: 111 Pages: 129-140
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289110
[Journal Article] Investigation and Improvement of Verify-program in Carbon Nanotube Based Non-volatile Memory2015
- Author(s)
  Sheyang Ning, Tomoko Ogura Iwasaki, Kazuya Shimomura, Koh Johguchi, Eisuke Yanagizawa, Glen Rosendale, Monte Manning, Darlene Viviani, Thomas Rueckes and Ken Takeuchi
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 62 Pages: 2837-2844
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289110
[Journal Article] Highly Reliable, High Speed and Low Power NAND Flash Memory-Based Solid State Drives (SSDs)2012
- Author(s)
  Ken Takeuchi
- Journal Title
  
  IEICE Electronics Express (ELEX)
  
  Volume: vol. 9 Pages: 779-794
- NAID
  130001922730
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360152
[Journal Article] Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in sub-20nm Bulk/SOI NAND Flash Memory2012
- Author(s)
  Kousuke Miyaji, Chinglin Hung and Ken Takeuchi
- Journal Title
  
  Japanese Journal of Applied Physics (JJAP)
  
  Volume: vol. 51, no. 4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360152
[Journal Article] Highly Reliable, High Speed and Low Power NAND Flash Memory-Based Solid State Drives (SSDs)2012
- Author(s)
  Ken Takeuchi, Teruyoshi Hatanaka and Shuhei Tanakamaru
- Journal Title
  
  IEICE Electronics Express (ELEX)
  
  Volume: vol. 9, no. 8 Pages: 779-794
- NAID
  130001922730
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360152
[Journal Article] A 0.5V Operation VTH Loss Compensated DRAM Word-line Booster Circuit for Ultra-Low Power VLSI Systems2011
- Author(s)
  Shuhei Tanakamaru, Ken Takeuchi
- Journal Title
  
  IEEE J.of Solid-State Circuits
  
  Volume: 46 Pages: 2406-2415
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360152
[Journal Article] A 0.5-V 6-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors2010
- Author(s)
  Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi
- Journal Title
  
  Japanese Journal of Applied Physics (JJAP)
  
  Volume: 49 Pages: 121501-121509
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360152
[Journal Article] A 0.5-V 6-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors2010
- Author(s)
  Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai, Ken Takeuchi
- Journal Title
  
  Japanese Journal of Applied Physics (JJAP) 49
  
  Pages: 121501-121509
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360152
[Journal Article] フラッシュメモリの最新技術動向 -SSDへの応用2008
- Author(s)
  竹内健
- Journal Title
  
  情報処理
  
  Volume: vol.49,no.9 Pages: 1090-1098
- NAID
  110006884816
- Data Source
  KAKENHI-PROJECT-20360152
[Journal Article] フラッシュメモリの最新技術動向-SSDへの応用2008
- Author(s)
  竹内健
- Journal Title
  
  情報処理 vol.49, no.9
  
  Pages: 1090-1098
- NAID
  110006884816
- Data Source
  KAKENHI-PROJECT-20360152
[Patent] 不揮発性半導体記憶装置2009
- Inventor(s)
  竹内健、他 4 名
- Industrial Property Rights Holder
  東京大学
- Industrial Property Number
  2010-534730
- Filing Date
  2009-04-17
- Data Source
  KAKENHI-PROJECT-20360152
[Patent] 不揮発性半導体記憶装置2008
- Inventor(s)
  竹内健, 他4名
- Industrial Property Rights Holder
  東京大学
- Filing Date
  2008-10-20
- Data Source
  KAKENHI-PROJECT-20360152
[Patent] 不揮発性半導体記憶装置2008
- Inventor(s)
  竹内健, 他、4名
- Industrial Property Rights Holder
  東京大学
- Filing Date
  2008-10-20
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] 確率的FG 型ニューロンにおけるしきい値ばらつきと電子注入ノイズの確率共鳴特性に及ぼす効果2024
- Author(s)
  合田晃, 松井千尋, 竹内健
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H04159
[Presentation] Revealing Unique Scaling Effects of Random Telegraph Noise and Electron Injection Stochasticity in Stochastic Resonance with Floating Gate-based Neurons2024
- Author(s)
  Akira Goda, Chihiro Matsui and Ken Takeuchi
- Organizer
  8th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H04159
[Presentation] A Beat Signal Processing System with Parabolic Frequency Chirp Radar and Computation-in-Memory2023
- Author(s)
  Kazuhide Higuchi and Ken Takeuchi
- Organizer
  20th European Radar Conference (EuRAD 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H04159
[Presentation] Stochastic Resonance Effects of Floating Gate Technology-based Leaky Integrate-and-Fire (FG LIF) Neurons in Summing Network2023
- Author(s)
  Akira Goda, Chihiro Matsui and Ken Takeuchi
- Organizer
  7th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H04159
[Presentation] Stochastic Computing-based Computation-in-Memory (SC CiM) Architecture for DNNs and Hierarchical Evaluations of Non-volatile Memory Error and Defect Tolerance2023
- Author(s)
  Takuto Nishimura, Yuya Ichikawa, Akira Goda, Naoko Misawa, Chihiro Matsui and Ken Takeuchi
- Organizer
  IEEE International Memory Workshop Poster
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H04159
[Presentation] 確率的FG型ニューロンの内在ノイズモデル化と確率共鳴効果における信号検知精度への影響2023
- Author(s)
  合田晃, 松井千尋, 竹内健
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H04159
[Presentation] 不均一量子化を適用した不揮発性メモリのComputation-in-Memory による量子誤り訂正デコーダ2023
- Author(s)
  市川裕也, 合田晃, 松井千尋, 竹内健
- Organizer
  LSIとシステムのワークショップ2023, ポスターセッション
- Data Source
  KAKENHI-PROJECT-20H04159
[Presentation] Non-volatile Memory Application to Quantum Error Correction with Non-uniformly Quantized CiM2022
- Author(s)
  Yuya Ichikawa, Akira Goda, Chihiro Matsui and Ken Takeuchi
- Organizer
  IEEE International Memory Workshop Poster
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H04159
[Presentation] 半導体長期保存メモリ2022
- Author(s)
  竹内健
- Organizer
  日本写真学会画像保存セミナー
- Invited
- Data Source
  KAKENHI-PROJECT-20H04159
[Presentation] Inter Spike Interval and Stochasticity Engineering of Floating Gate Technology-based Neurons for Spiking Neural Network Hardware2022
- Author(s)
  Akira Goda, Chihiro Matsui and Ken Takeuchi
- Organizer
  6th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H04159
[Presentation] Spiking Neural Network (SNN) ハードウェア向けフローティングゲート型 Stochastic ニューロン2022
- Author(s)
  合田晃, 松井千尋, 竹内健
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H04159
[Presentation] Inter Spike Interval and Stochasticity Engineering of Floating Gate Technology-based Neurons for Spiking Neural Network Hardware2022
- Author(s)
  Akira Goda, Chihiro Matsui and Ken Takeuchi
- Organizer
  International Symposium on Semiconductor Manufacturing (ISSM) 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H04159
[Presentation] Error Suppression of Last-Programmed Word-Line for Real Usage of 3D-NAND Flash Memory2021
- Author(s)
  Daiki Kojima and Ken Takeuchi
- Organizer
  IEEE International Symposium on Circuits and Systems (ISCAS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H04159
[Presentation] BER Evaluation System Considering Device Characteristics of TLC and QLC NAND Flash Memories in Hybrid SSDs with Real Storage Workloads2021
- Author(s)
  Mamoru Fukuchi, Shun Suzuki, Kyosuke Maeda, Chihiro Matsui and Ken Takeuchi
- Organizer
  IEEE International Symposium on Circuits and Systems (ISCAS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H04159
[Presentation] FET型ニューロモルフィック集積回路2018
- Author(s)
  上村公紀, 能美奨, 鈴木健太, 竹内健
- Organizer
  電子情報通信学会総合大会
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] 文字認識向けニューロモルフィック集積回路2018
- Author(s)
  坂東昭太郎, 鶴見洸太, 鈴木健太, 竹内健
- Organizer
  電子情報通信学会総合大会
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] 43 % Reduced Program Time, 23 % Energy Efficient ReRAM Boost Converter with PMOS Switching Transistor and Boosted Buffer Circuit for ReRAM and NAND Flash Hybrid SSDs2018
- Author(s)
  Kenta Suzuki, Masahiro Tanaka, Kota Tsurumi and Ken Takeuchi
- Organizer
  International Conference on Electronic Packageing (ICEP)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] クロスバー型ReRAM向け書き込み電圧生成回路2018
- Author(s)
  能美奨, 鈴木健太, 鶴見洸太, 竹内健
- Organizer
  電子情報通信学会総合大会
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] A 6.8TOPS/W Energy Efficiency, 1.5μW Power Consumption, Pulse Width Modulation Neuromorphic Circuits for Near-Data Computing with SSD2018
- Author(s)
  Kota Tsurumi, Kenta Suzuki and Ken Takeuchi
- Organizer
  IEEE Asian Solid-State Circuits Conference (A-SSCC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] 0.6 V operation, 16 % Faster Set/Reset ReRAM Boost Converter with Adaptive Buffer Voltage for ReRAM and NAND Flash Hybrid Solid-State Drives2017
- Author(s)
  Kota Tsurumi, Masahiro Tanaka and Ken Takeuchi
- Organizer
  The International Symposium on Quality Electronic Design (ISQED)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] ハイブリッドSSD向け0.6V動作抵抗変化型メモリの書き込み電圧生成回路の高速化2017
- Author(s)
  鈴木健太, 鶴見洸太, 田中誠大, 竹内健
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  東京都目黒区　東京工業大学
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] IoTローカルデバイス向けCMOSプロセスとNAND型フラッシュプロセスで構成される1.0 V動作NAND型フラッシュメモリ書き込み電圧生成回路2017
- Author(s)
  鶴見洸太, 田中誠大, 竹内健
- Organizer
  集積回路研究会
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] 0.6V動作ReRAM書き込み電圧生成回路における書き込みデータサイズに応じたバッファ電圧最適化手法2017
- Author(s)
  鶴見洸太, 鈴木健太, 竹内健
- Organizer
  LSIとシステムのワークショップ2017
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] NAND型フラッシュメモリとReRAMで構成されるハイブリッドSSD向け低電力動作可能な昇圧回路2017
- Author(s)
  鈴木健太, 鶴見洸太，竹内健
- Organizer
  集積回路研究会
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] カーボンナノチューブを用いた不揮発性メモリにおける書き換え電圧を変化させたときの耐久性評価2017
- Author(s)
  猪瀬貴史, Tomoko Ogura iwasaki, Sheyang Ning, Darlene Viviani, Monte Manning, X. M. Henry Huang, Thomas Rueckes, 竹内健
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  東京都目黒区　東京工業大学
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] カーボンナノチューブを用いた不揮発性メモリにおける書き換え電圧を変化させたときの耐久性評価2016
- Author(s)
  猪瀬貴史, Tomoko Ogura iwasaki, Sheyang Ning, Darlene Viviani, Monte Manning, X. M. Henry Huang, Thomas Rueckes, 竹内健
- Organizer
  応用物理学関係連合講演会
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] NRAM: high performance, highly reliable emerging memory2016
- Author(s)
  Sheyang Ning, Tomoko Ogura Iwasaki, Darlene Viviani, Henry Huang, Monte Manning, Thomas Rueckes and Ken Takeuchi
- Organizer
  Flash Memory Summit
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] IoTデバイス向けReRAM書き込み電圧生成回路の低電圧化およびコンパレータ回路のバイアス電流最適化手法2016
- Author(s)
  鶴見洸太，田中誠大，石井智也, 竹内健
- Organizer
  集積回路研究会
- Place of Presentation
  東京都港区　機械振興会館
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] ReRAMの書き換え電圧昇圧回路の高速化2016
- Author(s)
  鈴木健太, 田中誠大, 鶴見洸太, 竹内健
- Organizer
  集積回路研究会
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] IoT向け端末に組み込まれるコンパレータ回路のバイアス電流を最適化した0.6V動作ReRAM書き込み電圧生成回路2016
- Author(s)
  田中誠大, 石井智也, 蜂谷尚悟, 寧渉洋, 竹内健
- Organizer
  集積回路研究会
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] ハイブリッドSSD向け0.6V動作抵抗変化型メモリの書き込み電圧生成回路の高速化2016
- Author(s)
  鈴木健太, 鶴見洸太, 田中誠大, 竹内健
- Organizer
  応用物理学関係連合講演会
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] ReRAM reliability characterization and improvement by machine learning2016
- Author(s)
  Tomoko Ogura Iwasaki, Sheyang Ning, Hiroki Yamazawa, Chao Sun, Shuhei Tanakamaru, Ken Takeuchi
- Organizer
  集積回路研究会
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] Heterogeneously Integrated Program Voltage Generator for 1.0V Operation NAND Flash with Best Mix & Match of Standard CMOS Process and NAND Flash Process2016
- Author(s)
  Masahiro Tanaka, Kota Tsurumi, Tomoya Ishii and Ken Takeuchi
- Organizer
  IEEE European Solid-State Circuits Conference Conference (ESSCIRC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] Reliability Study of Carbon Nanotube Memory after Various Cycling Conditions2016
- Author(s)
  Takashi Inose, Tomoko Ogura Iwasaki, Sheyang Ning, Darlene Viviani, Monte Manning, X. M. Henry Huang, Thomas Rueckes and Ken Takeuchi
- Organizer
  Silicon Nanoelectronics Workshop (SNW)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] A 1.0 V Operation, 65% Faster Set/Reset Voltage (3V) Generator for 3D-integrated ReRAM and NAND flash Hybrid Solid-State Drive2015
- Author(s)
  Masahiro Tanaka, Shogo Hachiya, Tomoya Ishii, Sheyang Ning and Ken Takeuchi
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Sapporo Convention Center
- Year and Date
  2015-09-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] 0.6V Operation, 26% Smaller Voltage Ripple, 9% Energy Efficient Boost Converter with Adaptively Optimized Comparator Bias-Current for ReRAM Program in Low Power IoT Embedded Applications2015
- Author(s)
  Tomoya Ishii, Shogo Hachiya, Sheyang Ning, Masahiro Tanaka and Ken Takeuchi
- Organizer
  IEEE Asian Solid-State Circuits Conference
- Place of Presentation
  Xia'men International Conference Center
- Year and Date
  2015-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] 抵抗変化型メモリの書き込み特性の評価2015
- Author(s)
  西川進, 寧渉洋, 蜂谷尚悟, 竹内健
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] Investigation of Carbon Nanotube Memory Cell Array Program Characteristics2015
- Author(s)
  Sheyang Ning, Tomoko Ogura Iwasaki, Eisuke Yanagizawa, Shogo Hachiya, Glen Rosendale, Monte Manning, Darlene Viviani, Thomas Rueckes and Ken Takeuchi
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Sapporo Convention Center
- Year and Date
  2015-09-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] Machine Learning Prediction for 13× Endurance Enhancement in ReRAM SSD System2015
- Author(s)
  Tomoko Ogura Iwasaki, Sheyang Ning, Hiroki Yamazawa, Chao Sun, Shuhei Tanakamaru and Ken Takeuchi
- Organizer
  IEEE International Memory Workshop
- Place of Presentation
  Hyatt Regency Hotel,Monterey,CA
- Year and Date
  2015-05-20
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] カーボンナノチューブを用いた不揮発性メモリデバイスの信頼性評価2015
- Author(s)
  猪瀬貴史, Tomoko Ogura Iwasaki, Sheyang Ning, 竹内健
- Organizer
  集積回路研究会
- Place of Presentation
  京都工芸繊維大学
- Year and Date
  2015-12-17
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] ReRAM for Storage Class Memory Application from Memory Architecture Perspective2015
- Author(s)
  Ken Takeuchi
- Organizer
  5th International Workshop on Resistive Memories
- Place of Presentation
  IMEC,Leuven,Belgium
- Year and Date
  2015-09-25
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] 低電圧動作可能なReRAM向けプログラム電圧生成回路2014
- Author(s)
  田中誠大, 石井智也, 蜂谷尚悟, 竹内健
- Organizer
  集積回路研究会
- Place of Presentation
  機械振興会館
- Year and Date
  2014-12-01
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] Carbon nanotube(CNT)を用いた不揮発性メモリデバイスの信頼性評価2014
- Author(s)
  柳沢英祐, 寧渉洋, 竹内健
- Organizer
  集積回路研究会
- Place of Presentation
  機械振興会館
- Year and Date
  2014-12-01
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] 23% Faster Program and 40% Energy Reduction of Carbon Nanotube Non-volatile Memory with Over 10^11 Endurance2014
- Author(s)
  Sheyang Ning, Tomoko Ogura Iwasaki, Kazuya Shimomura, Koh Johguchi, Glen Rosendale, Monte Manning, Darlene Viviani, Thomas Rueckes and Ken Takeuchi
- Organizer
  IEEE Symp. on VLSI Technology
- Place of Presentation
  Hilton Hawaiian Village, Honolulu, HI
- Year and Date
  2014-06-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] ＳＳＤコントローラーとミドルウェアの協調設計2014
- Author(s)
  荒川飛鳥, 孫超, 曽我あゆみ, 宮地幸祐, 竹内健
- Organizer
  LSIとシステムのワークショップ2014
- Place of Presentation
  北九州国際会議場
- Year and Date
  2014-05-26
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] 抵抗変化型メモリ(ReRAM)の書き込み特性の評価2014
- Author(s)
  西川進, 寧渉洋, 竹内健
- Organizer
  集積回路研究会
- Place of Presentation
  機械振興会館
- Year and Date
  2014-12-01
- Data Source
  KAKENHI-PROJECT-26289110
[Presentation] 不揮発性メモリを使いこなす2012
- Author(s)
  竹内健
- Organizer
  日経エレクトロニクスセミナー
- Place of Presentation
  東京都　化学会館
- Invited
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] NAND & Controller Co-design for SSD2012
- Author(s)
  Ken Takeuchi
- Organizer
  IEEE International Memory Workshop Short Course
- Place of Presentation
  ミラノ
- Year and Date
  2012-05-23
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] BiCS型立体構造NANDフラッシュメモリーにおけるゲート長、ゲート間隔及び積層数の設計指針2012
- Author(s)
  竹内健
- Organizer
  集積回路研究会, 信学技報,
- Place of Presentation
  東京工業大学　蔵前会館
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] 不揮発メモリの低電圧・低電力化技術2012
- Author(s)
  竹内健
- Organizer
  電子情報通信学会ソサイエティ大会
- Place of Presentation
  富山大学
- Invited
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] バルクとSOI NANDフラッシュメモリセルにおける微細化による短チャネル効果と書き込み禁止時チャネル昇圧リークへの影響2012
- Author(s)
  宮地幸祐, 洪慶麟, 竹内健
- Organizer
  応用物理学会
- Place of Presentation
  東京都新宿区早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] NAND & Controller Co-design for SSD2012
- Author(s)
  Ken Takeuchi
- Organizer
  IEEE International Memory Workshop Short Course
- Place of Presentation
  イタリア　ミラノ
- Invited
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Control Gate Length, Spacing and Stacked Layer Number Design for 3D-Stackable NAND Flash Memory2012
- Author(s)
  Yuki Yanagihara, Kousuke Miyaji and Ken Takeuchi
- Organizer
  IEEE International Memory Workshop
- Place of Presentation
  ミラノ
- Year and Date
  2012-05-22
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] SSDとストレージ・クラス・メモリを用いたメモリシステム2012
- Author(s)
  竹内健
- Organizer
  電気学会ナノエレクトロニクス集積化・応用技術調査専門委員会
- Place of Presentation
  早稲田大学研究開発センター
- Invited
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] NAND Flash and Storage Class Memory-integrated Hybrid Solid-State Drive (SSD)2011
- Author(s)
  Ken Takeuchi
- Organizer
  Silicon Nanoelectronics Workshop (SNW)
- Place of Presentation
  Rihga Royal Hotel Kyoto, Japan(招待講演)
- Year and Date
  2011-06-13
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] ReRAM as High-Speed and High Capacity Storage Class Memory2011
- Author(s)
  Ken Takeuchi
- Organizer
  IEEE Symp.on VLSI Circuits
- Place of Presentation
  Rihga Royal Hotel Kyoto, Japan(招待講演)
- Year and Date
  2011-06-17
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] HyENEXSSを用いたバルクとFDSOI基板における極微細浮遊ゲート型NANDフラッシュメモリのスケーリング検討2011
- Author(s)
  宮地幸祐, 竹内健
- Organizer
  TCAD研究会
- Place of Presentation
  神奈川県川崎市東芝研究開発センター
- Year and Date
  2011-05-23
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] BulkとSOI NANDフラッシュメモリセルにおける短チャネル効果とチャネル昇圧リークの微細化限界の検討2011
- Author(s)
  宮地幸祐, 洪慶麟, 竹内健
- Organizer
  集積回路研究会,信学技報
- Place of Presentation
  宮崎県宮崎市ニューウェルシティ宮崎
- Year and Date
  2011-11-29
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Ferroelectric-gate FET for Flash Memory & SRAM application2011
- Author(s)
  Ken Takeuchi
- Organizer
  ITRS Emerging Research Devices and Emerging Research Materials Meeting
- Place of Presentation
  ミラノ
- Year and Date
  2011-04-25
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Green High Performance Storage Class Memory & NAND Flash Memory Hybrid SSD System2011
- Author(s)
  Ken Takeuchi
- Organizer
  IEEE International Symposium on Low Power Electronics and Design (ISLPED)
- Place of Presentation
  Fukuoka, Japan(招待講演)
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Highly reliable Low Power Storage Class Memory & NAND Flash Memory Hybrid Solid-State Drive (SSD)2011
- Author(s)
  Ken Takeuchi
- Organizer
  IEEE Non-Volatile Memory Technology Symposium (NVMTS)
- Place of Presentation
  Shanghai Institute of Microsystem and Information Technology,中国(招待講演)
- Year and Date
  2011-11-08
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] 不揮発性メモリを使いこなす～SSDからストレージ・クラス・メモリまで～2011
- Author(s)
  竹内健
- Organizer
  日経エレクトロニクスセミナー
- Place of Presentation
  東京都港区日経エレクトロニクス本社(招待講演)
- Year and Date
  2011-04-25
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] 強誘電体FETを用いた低電力NANDフラッシュメモリ・SRAM技術2011
- Author(s)
  竹内健
- Organizer
  ゲートスタック研究会材料・プロセス・評価の物理(第16回研究会)
- Place of Presentation
  東京(招待講演)
- Year and Date
  2011-01-22
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] 3次元NANDフラッシュメモリ&SCM2011
- Author(s)
  竹内健
- Organizer
  Electronic Journal第771回Technical Seminar
- Place of Presentation
  東京都文京区東京大学(招待講演)
- Year and Date
  2011-08-02
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Ferroelectric-gate FET for Flash Memory & SRAM application2011
- Author(s)
  Ken Takeuchi
- Organizer
  ITRS Emerging Research Devices and Emerging Research Materials Meeting
- Place of Presentation
  ミラノ/イタリア
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] フラッシュメモリと抵抗変化型メモリの技術動向2011
- Author(s)
  竹内健
- Organizer
  新化学技術推進協会(JACI)電子情報技術部会講演会
- Place of Presentation
  東京都千代田区(社)新化学技術推進協会(招待講演)
- Year and Date
  2011-07-21
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] 高信頼・低電力SSD～メモリコントローラによるデータ変調信号処理技術による高信頼化と低電力化～2011
- Author(s)
  竹内健, 田中丸周平, 洪慶麟
- Organizer
  集積回路研究会,信学技報
- Place of Presentation
  兵庫県神戸市神戸大学(招待講演)
- Year and Date
  2011-04-18
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Storage Class Memory and Memory System Innovation-International Collaboration for Material, Device, Circuit, Signal Processing and OS Integration2011
- Author(s)
  Ken Takeuchi
- Organizer
  The Seventh International Nanotechnology Conferenee on Communication and Cooperation (INC7)
- Place of Presentation
  College of Nanoscale Science and Engineering, Albany, New York, USA(招待講演)
- Year and Date
  2011-05-17
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Ferroelectric-gate FET for Flash Memory & SRAM application2011
- Author(s)
  Ken Takeuchi
- Organizer
  ITRS Emerging Research Devices and Emerging Research Materials Meeting
- Place of Presentation
  ミラノ、イタリア(招待講演)
- Year and Date
  2011-04-05
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Pushing Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage from 13nm to 8nm with SOI NAND Flash Memory Cells2011
- Author(s)
  Kousuke Miyaji, Chinglin Hung, Ken Takeuchi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Nagoya University, Japan
- Year and Date
  2011-09-27
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] 0.5V動作強誘電体6T-SRAM2010
- Author(s)
  田中丸周平, 畑中輝義, 矢島亮児, 高橋光恵, 酒井滋樹, 竹内健
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  平塚
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] グリーンITを目指した極低電力NANDフラッシュメモリ・SRAM2010
- Author(s)
  竹内健
- Organizer
  電気化学会第74回半導体・集積回路技術シンポジウム
- Place of Presentation
  東京(招待講演)
- Year and Date
  2010-07-09
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Current Status and Future Challenge of Fe-NAND/SRAM Cell Technology2010
- Author(s)
  Ken Takeuchi
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  東京
- Year and Date
  2010-09-25
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Current Status and Future Challenge of Fe-NAND/SRAM Cell Technology2010
- Author(s)
  Ken Takeuchi
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  東京(招待講演)
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] しきい値電圧自己調整機能による60%スタティック・ノイズ・マージン(SNM)増加,32%アクティブ電力削減,42%リーク電流削減の強誘電体FETを使用した6T-SRAM2010
- Author(s)
  田中丸周平, 畑中輝義, 矢島亮児, 高橋光恵, 酒井滋樹, 竹内健
- Organizer
  電子情報通信学会集積回路研究会
- Place of Presentation
  藤沢
- Year and Date
  2010-04-15
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] ナノスケールメモリLSI:材料・デバイス・回路・システムを総動員し微細化を極限まで延命する2010
- Author(s)
  竹内健
- Organizer
  VDECデザイナーフォーラム
- Place of Presentation
  東京(招待講演)
- Year and Date
  2010-05-31
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] 0.5V動作,しきい値電圧自己調整機能による60%スタティック・ノイズ・マージン増加,32%アクティブ電力削減,42%リーク電流削減の強誘電体6T-SRAM2010
- Author(s)
  田中丸周平, 畑中輝義, 矢島亮児, 高橋光恵, 酒井滋樹, 竹内健
- Organizer
  電子情報通信学会SDM研究会・応物シリコンテクノロジー分科会ULSIデバイス委員会共催IEDM特集講演会
- Place of Presentation
  東京
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] A Ferroelectric NAND Flash Memory for Low-Power and Highly Reliable Enterprise SSDs and a Ferroelectric 6T-SRAM for 0.5V Low-Power CPU and SoC2010
- Author(s)
  Kosuke Miyaji, Teruyoshi Hatanaka, Shuhei Tanakamaru, Ryoji Yajima, Shinji Noda, Mitsue Takahashi, Shigeki Sakai, Ken Takeuchi
- Organizer
  Materials Research Society (MRS) Spring Meeting
- Place of Presentation
  サンフランシスコ、米国(招待講演)
- Year and Date
  2010-04-08
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] 3次元SSD用20Vブーストコンバータ向けのインダクタ設計2009
- Author(s)
  安福正, 石田光一, 高宮真, 桜井貴康, 竹内健
- Organizer
  電子情報通信学会集積回路研究会
- Place of Presentation
  静岡
- Year and Date
  2009-12-07
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Effect of Resistance of TSV's on Performance of Boost Converter for Low Power 3D SSD with NAND Flash Memories2009
- Author(s)
  Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai and Ken Takeuchi
- Organizer
  IEEE International Conference on 3D System Integration (3D IC)
- Place of Presentation
  サンフランシスコ
- Year and Date
  2009-09-28
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] A 1.8V 30nJ Adaptive Program-Voltage (20V) Generator for 3D-Integrated NAND Flash SSD2009
- Author(s)
  Koichi Ishida, Tadashi Yasufuku, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai and Ken Takeuchi
- Organizer
  IEEE International Solid-State Circuits Conference (ISSCC)
- Place of Presentation
  サンフランシスコ
- Year and Date
  2009-02-10
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] A 0.5V Operation, 32% Lower Active Power, 42% Lower Leakage Current, Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin2009
- Author(s)
  Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai, Ken Takeuchi
- Organizer
  IEEE International Electron Devices Meeting (IEDM)
- Place of Presentation
  ボルチモア、米国
- Year and Date
  2009-12-09
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Effect of Resistance of TSV's on Performance of Boost Converter for Low Power 3D SSD with NAND Flash Memories2009
- Author(s)
  Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi
- Organizer
  IEEE International Conference on 3D System Integration (3D IC)
- Place of Presentation
  サンフランシスコ/USA
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] A 0.5V Operation, 32% Lower Active Power, 42% Lower Leakage Current, Ferroelectric 6T -SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin2009
- Author(s)
  Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi
- Organizer
  IEEE International Electron Devices Meeting (IEDM)
- Place of Presentation
  ボルチモア
- Year and Date
  2009-12-08
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] 不揮発性機能デバイスと新アプリケーション2009
- Author(s)
  竹内健
- Organizer
  新機能素子研究開発協会新機能トランジスタ調査委員会
- Place of Presentation
  東京
- Year and Date
  2009-02-18
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Inductor Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories2009
- Author(s)
  Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi
- Organizer
  IEEE International Symposium on Low Power Electronics and Design (ISLPED)
- Place of Presentation
  サンフランシスコ/USA
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Inductor Design of 20-V BoostConverter for Low Power 3D Solid State Drive with NAND Flash Memories2009
- Author(s)
  Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai and Ken Takeuchi
- Organizer
  IEEE International Symposium on Low Power Electronics and Design (ISLPED)
- Place of Presentation
  サンフランシスコ
- Year and Date
  2009-08-19
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Memory System Innovation with SSD and Emerging Memories2009
- Author(s)
  Ken Takeuchi
- Organizer
  IEEE International Solid-State Circuits Conference (ISSCC), Memory Forum F-1
- Place of Presentation
  サンフランシスコ/USA(招待講演)
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] 3D LSI Design for MEMS Application2009
- Author(s)
  竹内健
- Organizer
  Japan-Taiwan GMOS MEMS Workshop, pp.113-131
- Place of Presentation
  台湾、新竹
- Year and Date
  2009-03-23
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] A 1.8V 30nJ Adaptive Program-Voltage (20V) Generator for 3D-Integrated NAND Flash SSD2009
- Author(s)
  Koichi Ishida, Tadashi Yasufuku, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi
- Organizer
  IEEE International Solid-State Circuits Conference (ISSCC), pp.238-239
- Place of Presentation
  サンフランシスコ/USA
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Memory System Innovation with SSD and Emerging Memories2009
- Author(s)
  竹内健
- Organizer
  IEEE International Solid-State Circuits Conference(ISSCC)Memory Forum F-1
- Place of Presentation
  アメリカ、サンフランシスコ
- Year and Date
  2009-02-08
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] 三次元積層NAND型フラッシュSSD向けプログラム電圧(20V)生成回路2009
- Author(s)
  安福正, 石田光一, 宮本晋示, 中井弘人, 高宮真, 桜井貴康, 竹内健
- Organizer
  システムLSIワークショップ
- Place of Presentation
  北九州
- Year and Date
  2009-05-20
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] A 0.5V Operation, 32% Lower Active Power, 42% Lower Leakage Current, Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin2009
- Author(s)
  Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai, Ken Takeuchi
- Organizer
  IEEE International Electron Devices Meeting (IEDM)
- Place of Presentation
  ボルチモア/USA
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Memory System Innovation with SSD and Emerging Memories2009
- Author(s)
  Ken Takeuchi
- Organizer
  IEEE International Solid-State Circuits Conference (ISSCC)
- Place of Presentation
  サンフランシスコ
- Year and Date
  2009-02-11
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Inductor Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories2009
- Author(s)
  Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi
- Organizer
  IEEE International Symposium on Low Power Electronics and Design (ISLPED)
- Place of Presentation
  サンフランシスコ、米国
- Year and Date
  2009-08-20
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] 三次元SSDの低電力化技術とSSD向けプログラム電圧(20V)生成回路2009
- Author(s)
  安福正, 石田光一, 高宮真, 桜井貴康, 竹内健
- Organizer
  電子情報通信学会集積回路研究会
- Place of Presentation
  仙台(招待講演)
- Year and Date
  2009-04-06
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] NAND型フラッシュSSD向け20Vブーストコンバータの制御方式(その1)(A Control Method of 20V Boost Converter for NAND Flash SSD)2009
- Author(s)
  石田光一, 安福正, 高官真, 桜井貴康, 竹内健
- Organizer
  電子情報通信学会総合大会, C-12-20
- Place of Presentation
  北九州市
- Year and Date
  2009-03-18
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] NAND型フラッシュSSD向け20Vブーストコンバータの制御方式(その2)(A Control Method of 20V Boost Converter for NAND Flash SSD)2009
- Author(s)
  安福正, 石田光一, 高官真, 桜井貴康, 竹内健
- Organizer
  電子情報通信学会総合大会, C-12-21
- Place of Presentation
  北九州市
- Year and Date
  2009-03-18
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Effect of Resistance of TSV's on Performance of Boost Converter for Low Power 3D SSD with NAND Flash Memories2009
- Author(s)
  Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi
- Organizer
  IEEE International Conference on 3D System Integration (3D IC)
- Place of Presentation
  サンフランシスコ、米国
- Year and Date
  2009-09-20
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Emerging 3D-Memory Device2008
- Author(s)
  竹内健
- Organizer
  2008 Taiwan & Japan Semiconductor Technology Forum
- Place of Presentation
  台湾、台北
- Year and Date
  2008-10-18
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] SSD動向とNANDフラッシュメモリ2008
- Author(s)
  竹内健
- Organizer
  電子情報通信学会集積回路研究会, 信学技報, vol.108, no.6, ICD2008-6, pp.31-36
- Place of Presentation
  東京
- Year and Date
  2008-04-17
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] VLSI回路設計手法とMEMSモデリング2008
- Author(s)
  竹内健
- Organizer
  第7回ファインMEMSシステム化設計プラットフォーム検討委員会
- Place of Presentation
  東京
- Year and Date
  2008-12-03
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Solid-State Drive(SSD)and Memory System Innovation2008
- Author(s)
  竹内健
- Organizer
  University of Tokyo-INRIA-Ecole des Mines Paris-INRETS Joint Symposium, pp.111-139
- Place of Presentation
  フランス、パリ
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Novel Co-design of NAND Flash Memory and NAND Flash Controller Circuits for sub-30nm Low-Power High-Speed Solid-State Drives (SSD)2008
- Author(s)
  Ken Takeuchi
- Organizer
  IEEE Symp.on VLSI Circuits, pp.124-125
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Solid-State Drive(SSD)and Memory System Innovation2008
- Author(s)
  竹内健
- Organizer
  Shanghai Jino Tong University-University of Tolcyo Joint Symposium on Electronics, Information Technology, and Electrical Engineering
- Place of Presentation
  中国、上海
- Year and Date
  2008-10-31
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Emerging Nanoscale Non-volatile Semiconductor Memories2008
- Author(s)
  竹内健
- Organizer
  Bilateral Workshop on Nanoscale Systems, pp.6-9
- Place of Presentation
  ドイツ、ミュンヘン
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] HDDの代替を目指すフラッシュメモリの現状と課題2008
- Author(s)
  竹内健
- Organizer
  Electronic Journal 第192回 Technical Symposium フラッシュメモリ/SSD徹底検証
- Place of Presentation
  東京
- Year and Date
  2008-11-26
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] SSDがもたらすメモリシステムの革新とPost NANDフラッシュメモリの技術動向2008
- Author(s)
  竹内健
- Organizer
  JEITAナノエレクトロニクス技術分科会
- Place of Presentation
  東京
- Year and Date
  2008-11-12
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Novel Co-design of NAND Flash Memory and NAND Flash Controller Circuits for sub-30nm Low-Power High-Speed Solid-State Drives (SSD)2008
- Author(s)
  Ken Takeuchi
- Organizer
  IEEE Symp. on VLSI Circuits
- Place of Presentation
  ホノルル
- Year and Date
  2008-06-22
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] VLSI回路設計手法とMEMSモデリング2008
- Author(s)
  竹内健
- Organizer
  電気等価回路から考えるMEMS設計手法研究会
- Place of Presentation
  東京
- Year and Date
  2008-12-01
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] 使い手のためのSSDのすべて2008
- Author(s)
  竹内健
- Organizer
  日経エレクトロニクスメモリ・システム・シンポジウム・モバイル新時代に向けたメモリ技術総覧
- Place of Presentation
  東京
- Year and Date
  2008-12-09
- Data Source
  KAKENHI-PROJECT-20360152
[Presentation] Novel Co-design of NAND Flash Memory and NAND Flash Controller Circuits for sub-30nm Low-Power High-Speed Solid-State Drives(SSD)2008
- Author(s)
  竹内健
- Organizer
  IEEE Symp.on VLSI Circuits, pp.124-125
- Place of Presentation
  京都
- Year and Date
  2008-06-19
- Data Source
  KAKENHI-PROJECT-20360152

Takeuchi Ken 竹内 健

竹内 健 タケウチ ケン

TAKEUCHI Ken 竹内 健

Research Projects

Research Products

デバイス・回路・エッジAIアルゴリズム融合による極低電力ハイブリッドCiMの研究Principal Investigator

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ハードソフト連携・精緻な電子制御による不揮発性メモリシステムのエラー最小化の研究Principal Investigator

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Research on integrated circuit system with new nano-materials for real-time big-data processingPrincipal Investigator

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Research on 3D-integrated Silicon Nano LSI SystemPrincipal Investigator

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[Book] Inside Solid State Drives (SSDs)2012

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[Journal Article] Stochastic Resonance Modeling of Floating Gate-based Neurons in Summing Networks for Accurate and Energy Efficient Operations2024

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[Journal Article] Heterogeneous Integration of Precise and Approximate Storage for Error-Tolerant Workloads2023

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[Journal Article] A Stochastic Leaky-Integrate-and-Fire Neuron Model With Floating Gate-Based Technology for Fast and Accurate Population Coding2022

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[Journal Article] Adaptive Comparator Bias-Current Control of 0.6 V Input Boost Converter for ReRAM Program Voltages in Low Power Embedded Applications2016

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[Journal Article] Memory System Architecture for the Data Centric Computing2016

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NAID

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[Journal Article] 0.6-1.0 V Operation Set/Reset Voltage (3V) Generator for 3D-integrated ReRAM and NAND flash Hybrid Solid-State Drive2016

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[Journal Article] Reset-Check-Reverse-Flag Scheme on NRAM with 50% Bit Error Rate or 35% Parity Overhead and 16% Decoding Latency Reductions for Read-Intensive Storage Class Memory2016

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[Journal Article] Carbon Nanotube Memory Cell Array Program Error Analysis and Tradeoff between Reset Voltage and Verify Pulses2016

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NAID

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[Journal Article] Understanding Relation Between Performance and Reliability of NAND Flash / SCM Hybrid Solid-State Drive (SSD)2015

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[Journal Article] Design Guidelines of Storage Class Memory Based Solid-State Drives to Balance Performance, Power, Endurance and Cost2015

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Takeuchi Ken 竹内健

竹内健タケウチケン

TAKEUCHI Ken 竹内健