imura masataka 井村将隆

… Alternative Names

IMURA Masataka 井村将隆

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Researcher Number	80465971
Other IDs	https://orcid.org/0000-0002-4236-9549
Affiliation (Current)	2025: 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主幹研究員
Affiliation (based on the past Project Information) *help	2023 – 2025: 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主幹研究員 2022 – 2023: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主幹研究員 2016 – 2021: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主任研究員 2017: 国立研究開発法人物質・材料研究機構, 機能性材料拠点, 主任研究員 2017: 物質材料研究機構, 主任研究員 … More 2015 – 2016: 国立研究開発法人物質・材料研究機構, 光・電子材料ユニットワイドバンドギャップ機能材料グループ, 主任研究員 2015: 国立研究開発法人物質・材料研究機構, 環境エネルギー材料部門, 主任研究員 2015: 国立研究開発法人物質・材料研究機構, 環境・エネルギー材料部門, 主任研究員 2014: 国立研究開発法人物質・材料研究機構, 光・電子材料ユニットワイドギャップ機能材料グループ, 主任研究員 2011 – 2014: 独立行政法人物質・材料研究機構, その他部局等, 研究員 2013: 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 主任研究員 2012: 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 研究員 2009 – 2010: National Institute for Materials Science, 国際ナノアーキテクトニクス研究拠点, ICYS-MANA研究員 2008: 独立行政法人物質・材料研究機構, 若手国際研究拠点, NIMSポスドク研究員 2007: 独立行政法人物質・材料研究機構, センサ材料センター, NIMSポスドク研究員 Less
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Structural/Functional materials / Basic Section 30010:Crystal engineering-related / Medium-sized Section 26:Materials engineering and related fields / Crystal engineering / Science and Engineering / Electron device/Electronic equipment
Keywords	Principal Investigator 窒化アルミニウム / ダイヤモンド / 電子デバイス・電子機器 / 電界効果トランジスタ / 高周波パワーデバイス / ヘテロ接合 / 電子デバイス / 窒化物半導体 / 有機金属化合物気相成長法 / 酸化アルミニウム … More / ノーマリオフ型 / 原子層体積成長法 / PIN接合 / 原子層堆積成長法 / 有機金属化合物化合物気相成長法 / 電子エミッタ / ダイオード / ワイドギャップ半導体 / マイクロ波プラズマ気相成長法 / 光デバイス / 酸化物半導体 / スパッタ堆積法 / MPCVD法 / MOCVD法 / パワースイッチングデバイス / 強誘電体 / 酸化ハフニウム / 酸化ジルコニウム / スパッタ法 / パワーデバイス / ゲート絶縁膜 / MOSFET / ヘテロエピタキシャル成長 / III族窒化物半導体 / 環境材料 / 光スイッチ / 電子電気材料 / デバイス設計 / 結晶成長 / 透過型電子顕微鏡 / 転位 / ヘテロ構造 … More Except Principal Investigator ダイヤモンド / ヘテロ接合 / ワイドギャップ半導体 / トランジスタ / III族窒化物 / ナノラミネート構造 / ＩＩＩ族窒化物 / 電界効果トランジスタ / 窒化アルミニウム / 縦型素子 / 不純物ドーピング / ヘテロエピタキシャル成長 / 導電性 / MOCVD / 高品質結晶成長 / AlN / 縦型デバイス / 高温デバイス / 窒化物半導体 / パワーデバイス / ヘテロ構造 / 半導体物性 / 結晶成長 / 超ワイドギャップ半導体 / 酸化アルミニウムガリウム / 超格子 / 混晶 / 酸化ガリウム / II族窒化物 / ナノラミネート薄膜 / Ⅲ族窒化物 / 原子層堆積法 / 誘電率 / ゲート絶縁膜 / 誘電体 / 異種接合 / 高誘電ゲート / 窒化物ゲート / 酸化物ゲート / 分極 / ノーマリオフ動作 / 強誘電体 / ゲート酸化膜 / 論理回路 / 水素終端表面 / ２次元正孔伝導 / 微細構造解析 / 酸化物界面 / 酸化物 / バンド不連続 / p型ドーパント / バンド不連 / MOVPE / ヘテロ接 / 利得 / フォトディテクター / 光応答 / 永続的光伝導 / MSM型 / ショットキー型 / 深紫外線 Less

AlGaN系窒化物半導体と金属性デラフォサイト型酸化物電極を用いたUVC-LEDの高効率化Principal Investigator
- Principal Investigator
  
  井村将隆
- Project Period (FY)
  2025 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  National Institute for Materials Science
Fabrication of vertical AlN devices
- Principal Investigator
  
  奥村宏典
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  University of Tsukuba
Develop a carrier control method for diamond using heterojunction doping technique
- Principal Investigator
  
  Koide Yasuo
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 26:Materials engineering and related fields
- Research Institution
  National Institute for Materials Science
Development of diamond electronic devices using AlN/diamond heterojunctionPrincipal Investigator
- Principal Investigator
  
  IMURA Masataka
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute for Materials Science
Development of diamond electron device using III-nitride nanolaminate singularity structure
- Principal Investigator
  
  KOIDE Yasuo
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  National Institute for Materials Science
Investigation of Ferroelectric Property Based on Nitride/Oxide Stack Structure and Its Application for Diamond FETPrincipal Investigator
- Principal Investigator
  
  Imura Masataka
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute for Materials Science
Fabrication of an ultra-wide-band-gap semiconductor having a 7-eV band gap
- Principal Investigator
  
  Oshima Takayoshi
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Saga University
Development of new diamond electron device using huge polarization charge
- Principal Investigator
  
  Koide Yasuo
- Project Period (FY)
  2013 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute for Materials Science
Energy Saving Normally-off p-Channel Diamond FET with High-Current OperationPrincipal Investigator
- Principal Investigator
  
  Imura Masataka
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute for Materials Science
Development of AlN/Diamond Heterojunction Field Effect TransistorPrincipal Investigator
- Principal Investigator
  
  IMURA Masataka
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute for Materials Science
Realization of ultra violet environment devices by using diamond and AlN hybrid structurePrincipal Investigator
- Principal Investigator
  
  IMURA Masataka
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute for Materials Science
ワイドギャップ半導体ヘテロ接合における電荷移送ドーピング法の開発
- Principal Investigator
  
  小出康夫
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Structural/Functional materials
- Research Institution
  National Institute for Materials Science
Preparation of guideline for sensing deep ultra-violet light using metal/diamond interfaces
- Principal Investigator
  
  KOIDE Yasuo
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Structural/Functional materials
- Research Institution
  National Institute for Materials Science

[Book] Study of Grain Boundary Character, Chapter 32017
- Author(s)
  Banal Ryan G.、Imura Masataka、Koide Yasuo
- Total Pages
  15
- Publisher
  IntechOpen
- ISBN
  9789535128625
- Data Source
  KAKENHI-PLANNED-16H06419
[Book] Study of Grain Boundary Character, Chapter 32016
- Author(s)
  Ryan G. Banal, Masataka Imura and Yasuo Koide
- Publisher
  INTECH
- Data Source
  KAKENHI-PROJECT-25249054
[Book] Study of Grain Boundary Character, Chapter 32016
- Author(s)
  Ryan G. Banal, Masataka Imura and Yasuo Koide
- Publisher
  INTECH open science/open minds
- Data Source
  KAKENHI-PLANNED-16H06419
[Journal Article] Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlOx/TiOy Nanolaminates2023
- Author(s)
  J. W. Liu, M. Okamura, H. Mashiko, M. Imura, M.Y. Liao, R. Kikuchi, M. Suzuka, Y. Koide
- Journal Title
  
  Nanomaterials
  
  Volume: 13 Issue: 7 Pages: 1256-1256
- DOI
  10.3390/nano13071256
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H00313
[Journal Article] Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection2022
- Author(s)
  Masataka Imura, Manabu Togawa, Masaya Miyahara, Hironori Okumura, Jiro Nishinaga, Meiyong Liao, Yasuo Koide
- Journal Title
  
  Functional Diamond
  
  Volume: 2 Issue: 1 Pages: 167-174
- DOI
  10.1080/26941112.2022.2150526
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H00313, KAKENHI-PROJECT-21K18635
[Journal Article] Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal organic vapor phase epitaxy using post-growth annealing with trimethylgallium2022
- Author(s)
  Imura Masataka、Inaba Hideki、Mano Takaaki、Ishida Nobuyuki、Uesugi Fumihiko、Kuroda Yoko、Nakayama Yoshiko、Takeguchi Masaki、Koide Yasuo
- Journal Title
  
  AIP Advances
  
  Volume: 12 Issue: 1 Pages: 015203-015203
- DOI
  10.1063/5.0076706
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K04501, KAKENHI-PROJECT-20H00313
[Journal Article] Thermal mismatch induced stress characterization by dynamic resonance based on diamond MEMS2021
- Author(s)
  Sun Huanying、Shen Xiulin、Sang Liwen、Imura Masataka、Koide Yasuo、You Jianqiang、Li Tie-Fu、Koizumi Satoshi、Liao Meiyong
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 4 Pages: 045501-045501
- DOI
  10.35848/1882-0786/abe7b0
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04501, KAKENHI-PROJECT-20H02212
[Journal Article] Temperature dependence of Young's modulus of single-crystal diamond determined by dynamic resonance2021
- Author(s)
  Shen Xiulin、Wu Kongping、Sun Huanying、Sang Liwen、Huang Zhaohui、Imura Masataka、Koide Yasuo、Koizumi Satoshi、Liao Meiyong
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 116 Pages: 108403-108403
- DOI
  10.1016/j.diamond.2021.108403
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04501, KAKENHI-PROJECT-20H02212
[Journal Article] Integrated TbDyFe Film on a Single‐Crystal Diamond Microelectromechanical Resonator for Magnetic Sensing2021
- Author(s)
  Shen Xiulin、Sun Huanying、Sang Liwen、Imura Masataka、Koide Yasuo、Koizumi Satoshi、Liao Meiyong
- Journal Title
  
  physica status solidi (RRL) Rapid Research Letters
  
  Volume: 15 Issue: 9 Pages: 2100352-2100352
- DOI
  10.1002/pssr.202100352
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04501, KAKENHI-PROJECT-20H02212
[Journal Article] Precise characterization of atomic-scale corrosion of single crystal diamond in H2 plasma based on MEMS/NEMS2020
- Author(s)
  Wu Haihua、Zhang Zilong、Sang Liwen、Li Tiefu、You Jianqiang、Imura Masataka、Koide Yasuo、Liao Meiyong
- Journal Title
  
  Corrosion Science
  
  Volume: 170 Pages: 108651-108651
- DOI
  10.1016/j.corsci.2020.108651
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04501, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-20H02212
[Journal Article] Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors2020
- Author(s)
  Sasama Yosuke、Kageura Taisuke、Komatsu Katsuyoshi、Moriyama Satoshi、Inoue Jun-ichi、Imura Masataka、Watanabe Kenji、Taniguchi Takashi、Uchihashi Takashi、Takahide Yamaguchi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 127 Issue: 18 Pages: 185707-185707
- DOI
  10.1063/5.0001868
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K04501, KAKENHI-PROJECT-20H05621, KAKENHI-PROJECT-19H02592, KAKENHI-PROJECT-19H02605, KAKENHI-PROJECT-19J12696, KAKENHI-PROJECT-19K15030, KAKENHI-PROJECT-20H02707
[Journal Article] Threshold Voltage Instability of Diamond Metal-Oxide-Semiconductor Field-Effect Transistors Based on 2D Hole Gas2019
- Author(s)
  M. Yang, L. Sang, M. Y. Liao, M. Imura, H. Li, Y. Koide
- Journal Title
  
  Physica Status Solidi (A) Applications and Materials Science
  
  Volume: 216 Issue: 24 Pages: 1900538-1900538
- DOI
  10.1002/pssa.201900538
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06419
[Journal Article] Fabrication of coherent γ-Al_2O_3/Ga_2O_3superlattices on MgAl_2O_4substrates2019
- Author(s)
  Y. Kato, M. Imura, Y. Nakayama, M. Takeguchi, and T. Oshima
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 6 Pages: 1-4
- DOI
  10.7567/1882-0786/ab2196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04501
[Journal Article] Energy‐Efficient Metal-Insulator-Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases2019
- Author(s)
  Liao Meiyong、Sang Liwen、Shimaoka Takehiro、Imura Masataka、Koizumi Satoshi、Koide Yasuo
- Journal Title
  
  Advanced Electronic Materials
  
  Volume: 1 Issue: 5 Pages: 1800832-1800832
- DOI
  10.1002/aelm.201800832
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K14141, KAKENHI-PROJECT-15H03999, KAKENHI-PROJECT-19K04501, KAKENHI-PLANNED-16H06419
[Journal Article] Surface and Bulk Electronic Structures of Unintentionally and Mg Doped In0.7Ga0.3N Epilayer by Hard X-ray Photoelectron Spectroscopy2018
- Author(s)
  M. Imura, S. Tsuda, H. Takeda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 123 Issue: 9 Pages: 095701-1
- DOI
  10.1063/1.5016574
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03559, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K06330
[Journal Article] Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal-Organic Vapor Phase Epitaxy2018
- Author(s)
  M. Imura, Y. Ota, R.G. Banal, M. Liao, Y. Nakayama, M. Takeguchi, and Y. Koide
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 215 Issue: 21 Pages: 1800282-8
- DOI
  10.1002/pssa.201800282
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Journal Article] Development of AlN/Diamond heterostructure formation and unique interface property2018
- Author(s)
  井村将隆，バナルライアン，廖梅勇，松本隆夫，熊本明仁，柴田直哉，幾原雄一，小出康夫
- Journal Title
  
  Journal of the Japanese Association for Crystal Growth
  
  Volume: 45 Issue: 1 Pages: n/a
- DOI
  10.19009/jjacg.3-45-1-05
- NAID
  130006727551
- ISSN
  0385-6275, 2187-8366
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06419
[Journal Article] A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface2018
- Author(s)
  Kongping Wu, Meiyong Liao, Liwen Sang, Jiangwei Liu, Masataka Imura, Haitao Ye, Yasuo Koide
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 123 Issue: 16 Pages: 161599-161599
- DOI
  10.1063/1.5002176
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13806, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-15H03999, KAKENHI-PROJECT-16K06330
[Journal Article] Annealing effects on hydrogenated diamond NOR logic circuits2018
- Author(s)
  Jiangwei Liu, Hirotaka, Oosato, Meiyong Liao, Masataka Imura, Eiichiro Watanabe, Yasuo Koide
- Journal Title
  
  Applied Physics Letters
  
  Volume: 112 Issue: 15 Pages: 153501-153501
- DOI
  10.1063/1.5022590
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13806, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K06330
[Journal Article] α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire2018
- Author(s)
  Takayoshi Oshima, Yuji Kato, Masataka Imura, Yoshiko Nakayama, Masaki Takeguchi
- Journal Title
  
  Applied Physics Express
  
  Volume: 印刷中
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K13673
[Journal Article] Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer2018
- Author(s)
  T. Matsumoto, H. Kato, T. Makino, M. Ogura, D. Takeuchi, S. Yamasaki, M. Imura, A. Ueda, T. Inokuma, and N. Tokuda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 4S Pages: 04FR01-04FR01
- DOI
  10.7567/jjap.57.04fr01
- NAID
  210000149007
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330, KAKENHI-PROJECT-17H02786
[Journal Article] Deposition of TiO 2/Al 2O 3bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters2017
- Author(s)
  J.W. Liu, M.Y. Liao, M. Imura, R.G. Banal, and Y. Koide
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 121 Issue: 22 Pages: 224502-11
- DOI
  10.1063/1.4985066
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K18096
[Journal Article] Logic Circuits With Hydrogenated Diamond Field-Effect Transistors2017
- Author(s)
  J. Liu, H. Ohsato, M. Liao, M. Imura, E. Watanabe, and Y. Koide
- Journal Title
  
  Ieee Electron Device Letters
  
  Volume: 38 Issue: 7 Pages: 922-925
- DOI
  10.1109/led.2017.2702744
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K18096
[Journal Article] Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al2O3 Stack Gate2017
- Author(s)
  R.G. Banal, M. Imura, H. Ohata, M. Liao, J. Liu, and Y. Koide
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 214 Issue: 11 Pages: 1700463-1700463
- DOI
  10.1002/pssa.201700463
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K18096
[Journal Article] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy2017
- Author(s)
  M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 121 Issue: 9 Pages: 095703-095703
- DOI
  10.1063/1.4977201
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03559, KAKENHI-PROJECT-26600090, KAKENHI-PROJECT-16K06330, KAKENHI-PLANNED-16H06419
[Journal Article] Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel2017
- Author(s)
  Masataka Imura, Ryan G. Banal, Meiyong Liao, Jiangwei Liu, Takashi Aizawa, Akihiro Tanaka, Hideo Iwai, Takaaki Mano, and Yasuo Koide
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 121 Issue: 2 Pages: 025702-025702
- DOI
  10.1063/1.4972979
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-15H03999, KAKENHI-PROJECT-16K06330, KAKENHI-PROJECT-16K18096
[Journal Article] Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors2016
- Author(s)
  Ryan G. Banal, Masataka Imura, Jiangwei Liu, and Yasuo Koide,
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 120 Issue: 11 Pages: 115307-115307
- DOI
  10.1063/1.4962854
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-16K06330, KAKENHI-PROJECT-16K18096
[Journal Article] High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors2016
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, and Y.Koide
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 120 Issue: 12 Pages: 124504-124504
- DOI
  10.1063/1.4962851
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-16K06330, KAKENHI-PROJECT-16K18096
[Journal Article] Formation Mechanism and Elimination of Small‐Angle Formation Mechanism and Elimination of Small‐Angle Grain Boundary in AlN Grown on (0001) Sapphire Substrate2016
- Author(s)
  R.G. Banal, M. Imura, Y. Koide
- Journal Title
  
  INTECH
  
  Volume: Chapter3 Pages: 43-58
- DOI
  10.5772/66177
- ISBN
  9789535128618, 9789535128625
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Journal Article] Nanometer-thin ALD-Al2O3 for the improvement of structural quality of AlN grown on sapphire substrate by MOVPE2016
- Author(s)
  Ryan G. Banal, Masataka Imura,1, Daiju Tsuya, Hideo Iwai, and Yasuo Koide
- Journal Title
  
  Phys. Status Solidi A
  
  Volume: 217 Issue: 2 Pages: 1600727-1600727
- DOI
  10.1002/pssa.201600727
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-16K06330
[Journal Article] Influence of surface structure of (0001) sapphire substrate on the elimination of small-angle grain boundary in AlN epilayer2015
- Author(s)
  R. G. Banal, M. Imura, and Y. Koide
- Journal Title
  
  Aip Advances
  
  Volume: 5 Issue: 9 Pages: 0971431-8
- DOI
  10.1063/1.4931159
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349
[Journal Article] Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors2015
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, T. Matsumoto, N. Shibata, Y. Ikuhara, and Y. Koide
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 118 Issue: 11 Pages: 1157041-6
- DOI
  10.1063/1.4930294
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349, KAKENHI-PROJECT-26289234, KAKENHI-PLANNED-25106003, KAKENHI-PROJECT-25249054
[Journal Article] Impedance analysis of Al2O3/H-terminated diamond MOS structures2015
- Author(s)
  M.Y. Liao, J.W. Liu, L. W. Sang. D. Coatchup, J. L. Li, M. Imura, Y. Koide, H. Ye
- Journal Title
  
  Appl.Phys. Lett
  
  Volume: 106 Issue: 8 Pages: 083506-083506
- DOI
  10.1063/1.4913597
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03999, KAKENHI-PROJECT-25420349, KAKENHI-PROJECT-25249054
[Journal Article] Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond2015
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 54 Pages: 55-58
- DOI
  10.1016/j.diamond.2014.10.004
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349, KAKENHI-PROJECT-25249054
[Journal Article] Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material2014
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, and Y. Koide
- Journal Title
  
  Journal of Physics D
  
  Volume: 47 Issue: 24 Pages: 245102-15
- DOI
  10.1088/0022-3727/47/24/245102
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420349
[Journal Article] Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor2014
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, and Y. Koide
- Journal Title
  
  Applied Physics Letters
  
  Volume: 105 Issue: 8 Pages: 082110-14
- DOI
  10.1063/1.4894291
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25420349, KAKENHI-PROJECT-25249054
[Journal Article] Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric2014
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, A. Tanaka, H. Iwai, and Y. Koide
- Journal Title
  
  Scientific Reports
  
  Volume: 4 Issue: 1 Pages: 6395-1
- DOI
  10.1038/srep06395
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25420349, KAKENHI-PROJECT-25249054
[Journal Article] Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material2014
- Author(s)
  J. Liu, L. Meiyong, M. Imura, E. Watanabe, H. Oosato, Y. Koide
- Journal Title
  
  J. Phys. D: Appl. Phys.
  
  Volume: 47 Pages: 245102-1
- DOI
  10.1016/j.diamond.2013.06.005
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25249054
[Journal Article] Interfacial chemical bonding state and band alignment of CaF2/hydrogen-terminated diamond heterojunction2013
- Author(s)
  J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, and Y. Koide
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 113
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Normally-off HfO2-gated diamond field effect transistors2013
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 103 Issue: 9 Pages: 929051-3
- DOI
  10.1063/1.4820143
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-25420349
[Journal Article] ＡｌＮ／ダイヤモンドヘテロ接合ＦＥＴとＭＥＭＳスイッチ2013
- Author(s)
  小出　康夫，廖　梅勇，井村　将隆
- Journal Title
  
  応用電子物性分科会誌
  
  Volume: 第19巻 Pages: 7-13
- Data Source
  KAKENHI-PROJECT-25249054
[Journal Article] Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric2013
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide
- Journal Title
  
  Applied Physics Letters
  
  Volume: 102 Issue: 11 Pages: 1129101-4
- DOI
  10.1063/1.4798289
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319, KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-25420349
[Journal Article] Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors2013
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, and Y. Koide
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 114 Issue: 8 Pages: 841081-7
- DOI
  10.1063/1.4819108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-25420349
[Journal Article] Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <11-20> and <1-100> Zone-Axes of AlN for Polarity Determination2013
- Author(s)
  M. Imura, U. Gautam, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] ダイヤモンドを用いた光・電子デバイスの開発2013
- Author(s)
  小出　康夫，廖　梅勇，井村　将隆
- Journal Title
  
  スマートプロセス学会誌
  
  Volume: 第2巻 Pages: 224-229
- NAID
  10031200069
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249054
[Journal Article] Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric2013
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <11-20> and <1-100> Zone-Axes of AlN for Polarity Determination2013
- Author(s)
  M. Imura, U. Gautam, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] ダイヤモンドを用いた光・電子デバイスの開発2013
- Author(s)
  小出康夫、廖梅勇、井村将隆
- Journal Title
  
  スマートプロセス学会誌
  
  Volume: 2 Pages: 224-229
- NAID
  10031200069
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420349
[Journal Article] Interfacial chemical bonding state and band alignment of CaF /hydrogen-terminated diamond heterojunction2013
- Author(s)
  J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, and Y. Koide
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 113 Issue: 12 Pages: 1237061-6
- DOI
  10.1063/1.4798366
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319, KAKENHI-PROJECT-25249054
[Journal Article] 窒化アルミニウム／ダイヤモンドヘテロ接合を用いた電界効果トランジスタ2012
- Author(s)
  井村将隆、廖梅勇、小出康夫
- Journal Title
  
  NEW DIAMOND 105
  
  Volume: 28 Pages: 36-38
- NAID
  40019318460
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond2012
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Journal Title
  
  Applied Physics Letters
  
  Volume: 101 Issue: 25
- DOI
  10.1063/1.4772985
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond2012
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices2012
- Author(s)
  S. H. Cheng, L. W. Sang, M. Y. Liao, J. W. Liu, M. Imura, H. D. Li, and Y. Koide
- Journal Title
  
  Applied Physics Letters
  
  Volume: 101 Issue: 23 Pages: 232907-232907
- DOI
  10.1063/1.4770059
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319, KAKENHI-PROJECT-24760032
[Journal Article] Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices2012
- Author(s)
  S. H. Cheng, L. W. Sang, M. Y. Liao, J. W. Liu, M. Imura, H. D. Li, and Y. Koide
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Development of AlN/diamond heterojunction field effect transistors2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, T. Nagata, M. Y. Liao, Y. Koide, J. Yamamoto, K. Ban, M. Iwaya, and H. Amano
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 5 Pages: 206-209
- DOI
  10.1016/j.diamond.2012.01.020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] 窒化アルミニウム/ダイヤモンドヘテロ接合を用いた電界効果トランジスタ2012
- Author(s)
  井村将隆、廖梅勇、小出康夫
- Journal Title
  
  NEW DIAMOND
  
  Volume: 第105号, Vol. 28 No. 2 Pages: 36-38
- NAID
  40019318460
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Development of AlN/diamond heterojunction field effect transistors2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, T. Nagata, M. Y. Liao, Y. Koide, J. Yamamoto, K. Ban, M. Iwaya, and H. Amano
- Journal Title
  
  Diam. Relat. Mat.
  
  Volume: 24 Pages: 206-209
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Demonstration of Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011
- Author(s)
  M. Imura, R. Hayakawa, E. Watanabe, M. Y. Liao, Y. Koide, and H. Amano
- Journal Title
  
  Physica Status Solidi (RRL)
  
  Volume: 5 Issue: 3 Pages: 125-127
- DOI
  10.1002/pssr.201105024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Demonstration of diamond field effect transistors by AlN/diamond heterostructure2011
- Author(s)
  M. Imura, R. Hayakawa, E. Watanabe, M. Y. Liao, Y. Koide, and H. Amano
- Journal Title
  
  Phys. Status Solidi-Rapid Res. Lett.
  
  Volume: 5 Pages: 125-127
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Demonstration of Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011
- Author(s)
  M.Imura, R.Hayakawa, E.Watanabe, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Physica Status Solidi (RRL) 3
  
  Pages: 125-127
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Demonstration of Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011
- Author(s)
  M.Imura, R.Hayakawa, E.Watanabe, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Physica Status Solidi (RRL)
  
  Volume: 3 Pages: 125-127
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Analysis of polar direction of AlN grown on(0001)sapphire and 6H-Si C substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy2010
- Author(s)
  M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
- Journal Title
  
  Physica Status Solidi(c) (In press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Growth mechanism of c-axis-oriented AlN on(111)diamond substrates by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Journal of Crystal Growth 312
  
  Pages: 1325-1328
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy2010
- Author(s)
  M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
- Journal Title
  
  Physica Status Solidi (c)
  
  Volume: 7 Pages: 2365-2367
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Microstructure of AlN with two-domain structure on(001)diamond substrate grown by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Diamond & Related Materials 10
  
  Pages: 131-133
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Growth mechanism of c-axis oriented AlN on(001)diamond substrates by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Journal of Crystal Growth 312
  
  Pages: 368-372
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 312 Pages: 1325-1328
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy2010
- Author(s)
  M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
- Journal Title
  
  Physica Status Solidi (c) 7
  
  Pages: 2365-2367
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Growth mechanism of c-axis oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Journal of Crystal Growth 312
  
  Pages: 368-372
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Diamond, Related Materials 10
  
  Pages: 131-133
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Diamond & Related Materials
  
  Volume: 10 Pages: 131-133
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Journal of Crystal Growth 312
  
  Pages: 1325-1328
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Growth mechanism of c-axis oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 312 Pages: 368-372
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Ultraviolet Detectors Based on Ultraviolet- Ozone Modified Hydrogenated Diamond Surfaces2009
- Author(s)
  Jose Alvarez, Meiyong Liao, Jean-Paul Kleider, Yasuo Koide, and Masataka Imura
- Journal Title
  
  Appl. Phys. Express vol. 2, No. 6
- NAID
  10025086818
- Data Source
  KAKENHI-PROJECT-18360341
[Journal Article] Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on p+-Diamond Substrates2009
- Author(s)
  M. Imura, M. Y. Liao, J. Alvarez, and Y. Koide.
- Journal Title
  
  Diamond Relat. Mater. vol. 18
  
  Pages: 296-298
- Data Source
  KAKENHI-PROJECT-18360341
[Journal Article] Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on p+-Diamond Substrates2008
- Author(s)
  Masataka Imura
- Journal Title
  
  Diamond Relat. Mater 18
  
  Pages: 296-298
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360341
[Journal Article] Vertical-type Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on Heavily Boron-doped p+-Diamond Substrate2008
- Author(s)
  Masataka Imura
- Journal Title
  
  Diamond Relat. Mater 17
  
  Pages: 1234-1243
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360341
[Journal Article] Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors2008
- Author(s)
  M. Y. Liao, Y. Koide, J. Alvarez, M. Imura, and J. P. Kleider
- Journal Title
  
  Phys. Rev. B vol. 78
- Data Source
  KAKENHI-PROJECT-18360341
[Journal Article] Vertical-type Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on Heavily Boron-doped p+-Diamond Substrate2008
- Author(s)
  M. Imura, M. Y. Liao, J. Alvarez, and Y. Koide
- Journal Title
  
  Diamond Relat. Mater. vol. 17
  
  Pages: 1234-1243
- Data Source
  KAKENHI-PROJECT-18360341
[Journal Article] Submicron metal-semiconductor-metal dia- mond photodiodes toward improving the responsivity2007
- Author(s)
  M. Y. Liao, J. Alvarez, M. Imura, and Y. Koide
- Journal Title
  
  Appl. Phys. Lett. vol. 91
  
  Pages: 163510-163510
- Data Source
  KAKENHI-PROJECT-18360341
[Journal Article] Growth mechanism of c-axis oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy
- Author(s)
  Masataka Imura
- Journal Title
  
  Journal of Crystal Growth
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19656183
[Patent] ノーマリーオフ特性を有する水素化ダイヤモンドＭＩＳＦＥＴの製造方法2015
- Inventor(s)
  劉江偉小出康夫リャオメイヨン井村将隆
- Industrial Property Rights Holder
  劉江偉小出康夫リャオメイヨン井村将隆
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2015-174571
- Filing Date
  2015-09-04
- Data Source
  KAKENHI-PROJECT-25249054
[Patent] 電界効果トランジスタ及びその製造方法2010
- Inventor(s)
  井村将隆、小出康夫、リャオメイヨン、早川竜馬、天野浩
- Industrial Property Rights Holder
  井村将隆
- Industrial Property Number
  2010-231352
- Filing Date
  2010-10-14
- Data Source
  KAKENHI-PROJECT-21760268
[Patent] 電界効果トランジスタ及びその製造方法2010
- Inventor(s)
  井村将隆、早川竜馬、廖梅勇、小出康夫、天野浩
- Industrial Property Rights Holder
  物質・材料研究機構
- Industrial Property Number
  2010-231352
- Filing Date
  2010-10-14
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Super-High Dielectric Constant AlOx/TiOy Nanolaminates: Formation and Mechanism Discussion. STAC2024
- Author(s)
  LIU, Jiangwei, Masayuki Okamura, Naonori Mashiko, IMURA, Masataka, LIAO, Meiyong, Ryousuke Kikuchi, Michio Suzuka, KOIDE, Yasuo.
- Organizer
  D2MatE 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00313
[Presentation] Deposition and mechanism study for super-high dielectric constant AlOx/TiOy nanolaminates2023
- Author(s)
  LIU, Jiangwei, Masayuki Okamura, Naonori Mashiko, IMURA, Masataka, LIAO, Meiyong, Ryousuke Kikuchi, Michio Suzuka, KOIDE, Yasuo.
- Organizer
  6th International Conference on MATERIALS SCIENCE & NANOTECHNOLOGY.
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00313
[Presentation] Effect of post-growth annealing with trimethylgallium on structural quality of AlN layers grown on c-plane sapphire substrate by MOVPE2023
- Author(s)
  IMURA Masataka, INABA hideki, MANO, Takaaki, KOIDE, Yasuo
- Organizer
  The 14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00313
[Presentation] TMGa添加ポストアニール処理によるc面サファイア基板上AlNの結晶品質改善.2022
- Author(s)
  井村将隆, 稲葉英樹, 間野高明, 石田暢之, 上杉文彦, 黒田陽子, 中山佳子, 竹口雅樹, 小出康夫.
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] TMGa添加ポストアニール処理によるc面サファイア基板上AlNの結晶品質改善2022
- Author(s)
  井村将隆, 稲葉英樹, 間野高明, 石田暢之, 上杉文彦, 黒田陽子, 中山佳子, 竹口雅樹, 小出康夫
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00313
[Presentation] Challenge to development of III-nitride Nanolaminates/Diamond Heterojunction devices.2021
- Author(s)
  小出康夫, 井村将隆, 劉江偉, 廖梅勇.
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity. 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] Development of Atomic Layer Deposition Technique of AlxGa1-xN for Hydrogen-terminated diamond MIS-FETs.2021
- Author(s)
  井村将隆, 小出康夫.
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] Development of Atomic Layer Deposition Technique of AlxGa1-xN for Hydrogen-terminated diamond MIS-FETs2021
- Author(s)
  Masataka Imura, Yasuo Koide
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00313
[Presentation] Challenge to development of III-nitride Nanolaminates/Diamond Heterojunction devices2021
- Author(s)
  小出康夫, 井村将隆, 劉江偉, 廖梅勇
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00313
[Presentation] Three-dimensional Raman analysis of single crystal diamond cantilevers.2021
- Author(s)
  シェンシウリン, 市川公善, Zhaohui Huang, 小出康夫, 井村将隆, 小泉聡, 廖梅勇.
- Organizer
  The 14th International Conference on New Diamond and Nano Carbons (NDNC2020/2021) conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] Ⅲ族窒化物ナノラミネート特異構造を用いたダイヤモンド電子デバイスの開発2021
- Author(s)
  小出康夫, 劉江偉, 井村将隆, 廖梅勇
- Organizer
  第68回応用物理学会春季学術講演会. 2021
- Invited
- Data Source
  KAKENHI-PROJECT-20H00313
[Presentation] Ⅲ族窒化物ナノラミネート特異構造を用いたダイヤモンド電子デバイスの開発.2021
- Author(s)
  小出康夫, 劉江偉, 井村将隆, 廖梅勇.
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] Ⅲ族窒化物ナノラミネート特異構造を用いたダイヤモンド電子デバイスの開発2021
- Author(s)
  小出康夫, 劉江偉, 井村将隆, 廖梅勇
- Organizer
  2021年第68回応用物理学会春季学術講演会　シンポジウム「特異構造の結晶科学～学術とエレクトロニクス展開～」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00313
[Presentation] Development of Atomic Layer Deposition Technique of AlxGa1-xN for Hydrogen-terminated diamond MIS-FETs2021
- Author(s)
  井村将隆, 小出康夫
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology. 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00313
[Presentation] Ⅲ族窒化物ナノラミネート特異構造を用いたいたダイヤモンド電子デバイスの開発2021
- Author(s)
  小出康夫、劉江偉、井村将隆、廖梅勇
- Organizer
  2021第68回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] 真空紫外線及び70MeV陽子線に対して高い耐性を有すダイヤモンドSBD2020
- Author(s)
  井村将隆, 外川学, 奥村宏典, 西永慈郎, 宮原正也, 松木武雄, 小出康夫
- Organizer
  第39回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] ワイドギャップ半導体異種接合とデバイス応用2020
- Author(s)
  小出康夫，井村将隆，劉江偉，廖梅勇
- Organizer
  第81回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] ワイドギャップ半導体異種接合とデバイス応用2020
- Author(s)
  小出康夫，井村将隆，劉　江偉，廖　梅勇
- Organizer
  第81回応用物理学会秋季学術講演会　シンポジウム「第3世代異種材料接合と膜成長自在制御：界面ナノ・キベルネテス（舵手）」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00313
[Presentation] Challenge to development of III-nitride Nanolaminates/Diamond Heterojunciton devices2020
- Author(s)
  Y. Koide, M. Imura, J. Liu, and M. Liao
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] 高放射線耐性半導体検出器の開発2020
- Author(s)
  井村将隆
- Organizer
  茨城テックプランター2020
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] ダイヤモンド半導体のこれから2020
- Author(s)
  井村将隆
- Organizer
  第1回ダイヤモンド・DLC関連若手研究会
- Invited
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] InGaNの表面-バルク電子状態評価2019
- Author(s)
  井村将隆, 津田俊輔, 長田貴弘, 山下良之, 吉川英樹, 小林啓介, 小出康夫, 太田優一, 村田秀信, 山口智広, 金子昌充, 荒木努, 名西やすし
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] Electronic structures of InGaN alloys2019
- Author(s)
  M. Imura and Y. Ota
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] メタルマスクを用いた(111)ダイヤモンド選択成長と水素終端ダイヤモンドFETへの応用2019
- Author(s)
  井村将隆, 大里啓孝, 廖梅勇, 小出康夫
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] 原子配列に対するInGaNの電子状態依存性評価2019
- Author(s)
  井村将隆, 太田優一
- Organizer
  第38回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] Selective growth of diamond (111) by metal mask and its application for hydrogen terminated diamond FET2019
- Author(s)
  M. Imura, H. Oosato, M. Y. Liao, and Y. Koide
- Organizer
  13th Conference on New Diamond and Nano Carbons (NDNC2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] InGaN系窒化物半導体の表面ーバルク電子状態評価2018
- Author(s)
  井村将隆, 小出康夫, 荒木努, 名西やすし
- Organizer
  第110回研究会・特別公開シンポジウム「紫外発光デバイスの最前線と将来展望」
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Enhancement-mode hydrogenated diamond MOSFETs,“29th International Conference on Diamond and Carbon Materials2018
- Author(s)
  J. Liu, M. Liao, M. Imura, Y. Koide
- Organizer
  ICDCM 2018
- Invited
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] コヒーレントα-Al2O3/Ga2O3超格子の作製2018
- Author(s)
  加藤勇次，井村将隆，中山佳子，竹口雅樹，大島孝仁
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K13673
[Presentation] 硬X線光電子分光法を用いたアンドープInxGa1-xN(0≦x≦1)の表面ーバルク電子状態評価2018
- Author(s)
  井村将隆, 津田俊輔, 長田貴弘, 吉川英樹, 山下良之, 小林啓介, 小出康夫, 山口智広, 荒木努, 名西やすし
- Organizer
  第37回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Systematic investigation of surface and bulk electronic structures of unintentionally-doped InxGa1-xN (0≦x≦1) epilayers by hard X-ray photoelectron spectroscopy2018
- Author(s)
  M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, Y. Anli, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, T. Araki, and Y. Nanishi
- Organizer
  International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] 窒化アルミニウム成膜時のIn Situ測定2018
- Author(s)
  井村将隆
- Organizer
  第65回応用物理学会春季学術講演会ランチョンセミナー
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] 硬X線光電子分光法を用いたInGaN系窒化物半導体の表面ーバルク電子状態評価2018
- Author(s)
  井村将隆, 小出康夫, 荒木努, 名西やすし
- Organizer
  第10回ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] High-quality diamond epitaxial layer growth and electron devices application2018
- Author(s)
  Y. Koide, J.W. Liu, M. Imura, and M.Y. Liao
- Organizer
  SSDM2018
- Invited
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] Development of AlN/Diamond heterostructure formation and unique interface property2018
- Author(s)
  M. Imura, M. Y. Liao, and Y. Koide
- Organizer
  European Materials Research Society (E-MRS) 2018 Fall Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] III-nitride/diamond heterojunction2018
- Author(s)
  M. Imura, M. Y. Liao, and Y. Koide
- Organizer
  4th JST Sakura Science Workshop
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Electrical properties of H-terminated diamond FETs with AlN gate2018
- Author(s)
  Y. Koide, R. G. Banal, M. Imura, J.W. Liu, and M.Y. Liao
- Organizer
  4th E-MRS & MRS-J, Symposium
- Invited
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] Mgドーピングによる高In組成InGaNの表面-バルク電子状態変化2018
- Author(s)
  井村将隆, 津田俊輔, 長田貴弘, 山下良之, 吉川英樹, 小林啓介, 小出康夫, 山口智広, 金子昌充, 上松尚, 荒木努, 名西やすし
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Microstructure of In0.20Ga0.80N nanowires on Si (111) substrate evaluated by aberration-corrected scanning transmission electron microscopy2017
- Author(s)
  M. Imura, R. G. Banal, Y. Koide, Y. Nakayama, M. Takeguchi, S. Mizutani, T. Tabata, S. Nakagawa, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel2017
- Author(s)
  M. Imura, R. G. Ryan, M. Liao, J. Liu, T. Aizawa, A. Tanaka, H. Iwai, T. Mano, Y. Koide
- Organizer
  The 11th Conference on New Diamond and Nano Carbons (NDNC2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] High-current triple-gate H-diamond MOSFET2017
- Author(s)
  KOIDE, Yasuo, LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka.
- Organizer
  New Diamond and Nano Carbon Conference, (NDNC2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] Vacuum-Ultra-Violet Diamond-based Photodetector for high-power excimer lamp2017
- Author(s)
  M. Imura, M. Liao, and Y. Koide
- Organizer
  International Workshop on UV Materials and Devices 2017 (IWUMD2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Normally-on/off control of diamond FETs and logic circuit demonstration2017
- Author(s)
  Y. Koide, J.W. Liu, M. Imura, and M.Y. Liao
- Organizer
  E-MRS, Symposium O, Diamond for electron devices II, (Warsaw, Poland)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] Microstructure and electrical property of AlN/Diamond(111) heterojunction2017
- Author(s)
  M. Imura, M. Liao, and Y. Koide
- Organizer
  OIST Diamond WS2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy2017
- Author(s)
  M. Imura, S. Tsuda, T. Nagata, A. L. Yang, Y. Yamashita, H. Yoshikawa,Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS12)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Improvement on electrical properties of H-terminated diamond FETs using sputter deposition AlN/ atomic layer deposition Al2O3 stack gate structure2017
- Author(s)
  M. Imura, R. G. Banal, J. Liu, M. Liao, and Y. Koide
- Organizer
  28th International Conference on Diamond and Carbon Materials (ICDCM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Microstructure of Boron-doped AlN Epitaxial Layer Grown by Metal-Organic Vapor Phase Epitaxy2017
- Author(s)
  M. Imura, Y. Ota, R. G. Banal, and Y. Koide
- Organizer
  29th International Conference on Defects in Semiconductors (ICDS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] III-nitride/diamond hybrid systems2017
- Author(s)
  M. Imura, M. Liao, and Y. Koide
- Organizer
  3N-Lab Workshop Tsukuba-Grenoble for Diamond and GaN
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Structural Property of Boron-doped AlN grown by Metal-Organic Vapor Phase Epitaxy2016
- Author(s)
  M. Imura, Y. Ota, R. G. Banal, Y. Koide
- Organizer
  International workshop on UV materials and devices (IWUMD-2016)
- Place of Presentation
  Peking University, Beijing, China
- Year and Date
  2016-07-27
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Microstructure and Hole Accumulation Mechanism of AlN/Diamond(111) Het erojunctions Prepared by MOVPE2016
- Author(s)
  M. Imura, R. G. Banal, M. Y. Liao, J. W. Liu, Y. Koide, T. Matsumoto, N. Shibata, Y. Ikuhara
- Organizer
  International Conference on Diamond and Carbon Materials 2016 (ICDCM2016)
- Place of Presentation
  Le Corum, Montpellier, France
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Microstructure and hole accumulation mechanism of AlN/Diamond(111) heterojunctions prepared by MOVPE2016
- Author(s)
  M. Imura, R.G. Banal, M.Y. Liao, J. Liu, Y.Koide , T. Matsumoto, N. Shibata, Y. Ikuhara
- Organizer
  10th International International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
- Place of Presentation
  Xi'an, China
- Year and Date
  2016-09-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] MOVPE法により成長させたボロンドープAlNの構造評価2016
- Author(s)
  井村将隆, 太田優一, R. G. Banal, 小出康夫
- Organizer
  第35回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖
- Year and Date
  2016-07-06
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Sputter deposition AlN and atomic layer deposition Al2O3 as bilayer gate materials for Hterminated diamond field effect transistors2016
- Author(s)
  R.G. Banal, M. Imura, J. Liu, M. Liao, and Y.Koide
- Organizer
  International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
- Place of Presentation
  Montpelier, France
- Year and Date
  2016-09-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] Sputter deposition AlN and atomic layer deposition Al2O3 as bilayer gate materials for Hterminated diamond field effect transistors2016
- Author(s)
  R.G. Banal, M. Imura, J. Liu, M. Liao, and Y.Koide
- Organizer
  International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
- Place of Presentation
  Montpelier, France
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249054
[Presentation] Microstructure and hole accumulation mechanism of AlN/Diamond(111) heterojunctions prepared by MOVPE,2016
- Author(s)
  M. Imura, R.G. Banal, M.Y. Liao, J. Liu, Y.Koide , T. Matsumoto, N. Shibata, Y. Ikuhara
- Organizer
  International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
- Place of Presentation
  Montpelier, France
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249054
[Presentation] ALD-Al2O3/SD-AlN as Bilayer Gate Material for Diamond FET2015
- Author(s)
  R.G.Banal、井村将隆、劉江偉、小出康夫
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Effect of Boron incorporation on the structural quality of AlBN layer s grown by MOVPE2015
- Author(s)
  M. Imura, Y. Ota, R. G. Banal, and Y. Koide
- Organizer
  The 6th International Symposium on Growth of III-Nitrides(ISGN-6)
- Place of Presentation
  Act City, Hamamatsu, Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Low-temperature AlN Buffer Layer Technique to Eliminate the Small-angle Grain Boundary in AlN Grown on Sapphire Substrate2015
- Author(s)
  R. G. Banal, M. Imura, and Y. Koide
- Organizer
  The 6th International Symposium on Growth of III-Nitrides(ISGN-6)
- Place of Presentation
  Act City, Hamamatsu, Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] AlN/ダイヤモンド及びダイヤモンド/AlN/サファイア上のヘテロエピタキシャル成長2015
- Author(s)
  井村将隆、R.G.Banal、劉江偉、廖梅勇、小出康夫
- Organizer
  第29回ダイヤモンドシンポジウム
- Place of Presentation
  東京理科大学葛飾キャンパス
- Year and Date
  2015-11-17
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] 半導体の基礎II:窒化物半導体を用いた光・電子デバイス2015
- Author(s)
  井村将隆
- Organizer
  ソディック－未踏科学技術協会企業内セミナー(招待講演)
- Place of Presentation
  ソディック株式会社
- Year and Date
  2015-11-24
- Invited
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Control of normally-on/off in hydrogenated-diamond MISFET2015
- Author(s)
  劉江偉、廖梅勇、井村将隆、小出康夫
- Organizer
  第29回ダイヤモンドシンポジウム
- Place of Presentation
  東京理科大学葛飾キャンパス
- Year and Date
  2015-11-17
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] ZrO2 on hydrogenated-diamond: breakdown electric field interfacial band configuration and gate-drain distance scaling effect for electrical property of MISFET2015
- Author(s)
  劉江偉、M.Y.Liao、井村将隆、小出康夫
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Impedance Spectroscopy of Diamond MOS Structure2015
- Author(s)
  . Y. Liao, J. W. Liu, S. Liwen, D. Coatchup, J. L. Li, M. Imura, H. Ye, and Y. Koide
- Organizer
  9th International Conference on New Diamond and Nano Carbons (NDNC2015)
- Place of Presentation
  Shizuoka Granship, Shizuoka, Japan
- Year and Date
  2015-05-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Hydrogenated-diamond MISFET logic inverter2015
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  9th International Conference on New Diamond and Nano Carbons (NDNC2015)
- Place of Presentation
  Shizuoka Granship, Shizuoka, Japan
- Year and Date
  2015-05-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Hole channel formation mechanism in AlN/diamond heterojunction and high-k oxide gate diamond FETs2015
- Author(s)
  Y. Koide, M. Imura, J. W. Liu, M. Y. Liao, R. G. Banal, T. Matsumoto, N. Shibata, and Y. Ikuhara
- Organizer
  26th International Conference on Diamond and Carbon Materials (ICDCM2015)
- Place of Presentation
  Bad Homburg, Germany
- Year and Date
  2015-09-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Normally-off HfO2/diamond field effect transistors fabrication2014
- Author(s)
  劉江偉、M.Y.Liao、井村将隆、小出康夫
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] MOVPE法による(111)面ダイヤモンド基板上のAlNの高品質化2014
- Author(s)
  井村将隆、劉江偉、廖梅勇、小出康夫
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Al2O3 および HfO2/水素終端ダイヤモンド界面の周波数分散特性2014
- Author(s)
  小出康夫、劉江偉、M.Y.Liao、井村将隆、大里啓孝、渡辺英一郎、津谷大樹
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Band Configuration of HfO2/hydrogen-terminated Diamond Heterojunction Correlated with Electrical Properties of Metal/HfO2/hydrogen-terminated Diamond Diodes2013
- Author(s)
  J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano carbon conference (NDNC2013)
- Place of Presentation
  National University, Singapore.
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Atomic Layer Deposition Technique for Diamond-based Field Effect Transistors2013
- Author(s)
  M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
- Organizer
  NIMS Confrence 2013
- Place of Presentation
  Epochal Tsukuba, Japan.
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Interfacial Electronic Band Alignment of Ta2O5/hydrogen-terminated Diamond Heterojunction Determined by X-ray Photoelectron Spectroscopy2013
- Author(s)
  J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano carbon conference (NDNC2013)
- Place of Presentation
  National University, Singapore
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] AlN/ダイヤモンドヘテロ接合FETとMEMSスイッチ2013
- Author(s)
  小出康夫、廖梅勇、井村将隆
- Organizer
  応用物理学会応用電子物性分科会研究例会
- Place of Presentation
  金沢工業大学大学院虎ノ門キャンパス
- Invited
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Band configuration of HfO2/hydrogen-terminated diamond heterointerface correlated with electrical properties of metal/HfO2/hydrogen-terminated diamond diodes2013
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano Carbons Conference (NDNC 2013)
- Place of Presentation
  Novotel Singapore Clarke Quay, Singapole
- Data Source
  KAKENHI-PROJECT-25249054
[Presentation] nterfacial Electronic Band Alignment of Ta2O5/hydrogen-terminated Diamond Heterojunction Determined by X-ray Photoelectron Spectroscopy2013
- Author(s)
  J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano carbon conference (NDNC2013)
- Place of Presentation
  National University, Singapore.
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Combination with Atomic Layer Deposition Technique for Fabrication of High-performance HfO2/diamond Metal-oxide-insulator Field Effect Transistors2013
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  NIMS conference 2013
- Place of Presentation
  Epochal Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] 原子層堆積法による水素終端ダイヤモンド上のAl2O3とHfO2の電子構造2013
- Author(s)
  劉. 江偉、廖梅勇、井村将隆、小出康夫
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Diamond Field Effect Transistors using Al2O3 Insulator/Surface p-Channel Diamond Prepared by Thermal Treatment with Hydrogen and Ammonia Atmosphere2013
- Author(s)
  M. Imura, H. Ohsato, E. Watanabe, D. Tsuya, J. Liu, M. Y. Liao, Y. Koide
- Organizer
  International Conference on Diamond and Carbon Materials 2013 (ICDCM 2013)
- Place of Presentation
  Riva del Garda, Italy
- Data Source
  KAKENHI-PROJECT-25249054
[Presentation] 次世代パワーデバイス用ダイヤモンド電界効果トランジスタ2013
- Author(s)
  井村将隆、小出康夫
- Organizer
  Nano tech 2013
- Place of Presentation
  つくば国際会議場
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] HfO2/Hydrogenated-diamond field effect transistors for power devices2013
- Author(s)
  劉江偉、M.Y.Liao、井村将隆、小出康夫
- Organizer
  第13回 NIMSフォーラム
- Place of Presentation
  東京国際フォーラム
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] AlN/ダイヤモンドヘテロ接合を用いた電子デバイス2013
- Author(s)
  井村将隆、廖梅勇、小出康夫
- Organizer
  第43回結晶成長国内会議
- Place of Presentation
  長野市生涯学習センター
- Invited
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Interfacial electronic band alignment of Ta2O5/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy2013
- Author(s)
  J. W. Liu, S. H. Cheng, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano Carbons Conference (NDNC 2013)
- Place of Presentation
  Novotel Singapore Clarke Quay, Singapole
- Data Source
  KAKENHI-PROJECT-25249054
[Presentation] 次世代パワーデバイス用ダイヤモンド電界効果トランジスタ2013
- Author(s)
  井村将隆、小出康夫
- Organizer
  つくばテクノロジー・ショーケース2013
- Place of Presentation
  つくば国際会議場
- Year and Date
  2013-01-22
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] 原子層堆積法による水素終端ダイヤモンド上のAl2O3とHfO2の電子構造2013
- Author(s)
  劉. 江偉、廖梅勇、井村将隆、小出康夫
- Organizer
  第 60 回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] HfO2/diamond電界効果トランジスタの作成2013
- Author(s)
  劉江偉、M.Y.Liao、井村将隆、小出康夫
- Organizer
  第27回ダイヤモンドシンポジウム
- Place of Presentation
  日本工業大学
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Diamond field effect transistors using Al2O3 insulator / surface p-channel diamond prepared by thermal treatment with hydrogen and ammonia atmosphere2013
- Author(s)
  M. Imura, H. Ohsato, E. Watanabe, D. Tsuya, J. W. Liu, M. Y. Liao, and Y. Koide
- Organizer
  International Conference on Diamond and Carbon Materials 2013 (ICDCM2013)
- Place of Presentation
  Riva del Garda-Fierecongressi S.p.A.,Riva del Garda,Italy.
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Band Configuration of HfO2/hydrogen-terminated Diamond Heterojunction Correlated with Electrical Properties of Metal/HfO2/hydrogen-terminated Diamond Diodes2013
- Author(s)
  J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano carbon conference (NDNC2013)
- Place of Presentation
  National University, Singapore
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Fabrication of HfO2/hydrogenated diamond metal-oxide-semiconductor field effect transistors2013
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  International Conference on Diamond and Carbon Materials 2013 (ICDCM2013)
- Place of Presentation
  Riva del Garda-Fierecongressi S.p.A.,Riva del Garda,Italy.
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] 高濃度キャリアの電界制御を目指した強誘電体薄膜／ダイヤモンド接合2012
- Author(s)
  小出康夫、G.C.Chen、廖梅勇、井村将隆
- Organizer
  第72回応用応用物理学会学術講演会
- Place of Presentation
  愛媛大学&松山大学
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Metal/insulator/p-diamond Structure with Large-permittivity Insulator for Gate Field Controlling2012
- Author(s)
  Y. Koide, M. Y. Liao, M. Imura, and G. C. Chen
- Organizer
  New Diamond and Nano Carbons 2012 (NDNC2012)
- Place of Presentation
  Conrad San Juan Condado Plaza,San Juan,Puerto Rico
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] pチャネルAlN/Diamondヘテロ接合電界効果トランジスタ2012
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、MeiyongLiao、小出康夫、天野浩、松本翼、山崎聡
- Organizer
  第31回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Al2O3/Diamond Field Effect Transistors using Surface p-Channel Prepared by Thermal Treatment with Hydrogen and Ammonia Atmosphere2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano:
- Organizer
  IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] High dielectric constant oxide on diamond for high power devices2012
- Author(s)
  S. H. Cheng, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] 次世代パワーデバイス用ダイヤモンド電界効果トランジスタ2012
- Author(s)
  井村将隆、小出康夫
- Organizer
  第12回NIMSフォーラム
- Place of Presentation
  東京国際フォーラム
- Year and Date
  2012-10-25
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Field Effect Transistors by AlN/Diamond Heterostructure - past & future -2012
- Author(s)
  M.Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  Hasselt Diamond Workshop 2012 SBDD XVII
- Place of Presentation
  The cultuurcentrum Hasselt ,Hasselt,Belgium
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] TEM-CBED法を用いたAlNの極性決定評価2012
- Author(s)
  井村将隆、中島清美、小出康夫、天野浩、津田健治
- Organizer
  第31回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Electrical Transport Mechanism of Field Effect Transistors by AlN/Diamond Heterostructure2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  International Conference on Diamond and Carbon Materials (Diamond2012)
- Place of Presentation
  The Granada Congress and Exhibitions Centre, Granada, Spain
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] High-k insulator/p-diamond structure for gate voltage controlling / High-k insulator/p-diamond structure for gate voltage controlling2012
- Author(s)
  Y. Koide, G. C. Chen, M. Y. Liao and M. Imura
- Organizer
  International Conference on Diamond and Carbon Materials (Diamond2012)
- Place of Presentation
  The Granada Congress and Exhibitions Centre, Granada, Spain
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Diamond-FET using AlN/diamond heterojunction2012
- Author(s)
  M. Imura, M. Y. Liao, and Y. Koide
- Organizer
  IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Electrical property of high-k insulator/p-diamond diodes for electric field controlling2012
- Author(s)
  Y. Koide, G. C. Chen, M. Y. Liao, and M. Imura
- Organizer
  IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] 原子層堆積法により成膜したアルミナゲート表面チャネルダイヤモンドFETの特性評価2012
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、MeiyongLiao、小出康夫、天野浩、松本翼、山崎聡
- Organizer
  第26回ダイヤモンドシンポジウム
- Place of Presentation
  青山学院大学青山キャンパス
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] High-k insulator/p-diamond structure for gate voltage controlling / High-k insulator/p-diamond structure for gate voltage controlling2012
- Author(s)
  Y. Koide, G. C. Chen, M. Y. Liao, and M. Imura
- Organizer
  International Conference on Diamond and Carbon Materials (Diamond2012)
- Place of Presentation
  the Granada Congress and Exhibitions Centre, Granada, Spain
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] 高濃度キャリアの電界制御を目指した強誘電体薄膜/ダイヤモンド接合2012
- Author(s)
  小出康夫、G.C.Chen、廖梅勇、井村将隆
- Organizer
  第72回応用応用物理学会学術講演会
- Place of Presentation
  愛媛大学&松山大学
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Electrical Transport Mechanism of Field Effect Transistors by AlN/Diamond Heterostructure2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  International Conference on Diamond and Carbon Materials (Diamond2012)
- Place of Presentation
  the Granada Congress and Exhibitions Centre, Granada, Spain
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Field Effect Transistors by AlN/Diamond Heterostructure - past & future -.2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  Hasselt Diamond Workshop 2012 SBDD XVII(招待講演)
- Place of Presentation
  The cultuurcentrum Hasselt ,Hasselt,Belgium
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Polarity determination of AlN by convergent beam electron diffraction method based on transmission electron microscopy2012
- Author(s)
  M. Imura, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN 2012)
- Place of Presentation
  Sapporo Convention Center,Sapporo,Japan
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Development of Diamond Field Effect Transistors by AlN / Diamond Heterostructure2011
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  22nd European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes and Nitrides (Diamond2011)
- Place of Presentation
  Garmisch - Partenkirchen,Bavaria,German
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Demonstration of AlN/Diamond Heterostructure Field Effect Transistors2011
- Author(s)
  M. Imura, R. Hayakawa, H. Oosato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  MANA International Symposium 2011 (MANA Sympo. 2011)
- Place of Presentation
  Epochal Tsukuba, Tsukuba, Japan
- Year and Date
  2011-03-03
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  International Conference on New Diamond and Nano Carbons 2011 (NDNC2011)
- Place of Presentation
  Kunibiki Messe, Matsue, Japan
- Year and Date
  2011-05-19
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Development of Diamond Field Effect Transistors by AlN / Diamond Heterostructure2011
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  22nd European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes and Nitrides(Diamond2011)
- Place of Presentation
  Garmisch - Partenkirchen,Bavaria,German
- Year and Date
  2011-09-07
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Demonstration of AlN/Diamond Heterostructure Field Effect Transistors2011
- Author(s)
  M.Imura, R.Hayakawa, H.Oosato, E.Watanabe, D.Tsuya, M.Y.Liao, Y.Koide, H.Amano
- Organizer
  MANA International Symposium 2011
- Place of Presentation
  Epochal Tsukuba, Japan
- Year and Date
  2011-03-03
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] AlN/ダイヤモンドヘテロ構造トランジスタ2011
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] AlN/Diamondヘテロ接合型ダイヤモンド電界効果トランジスタ2011
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
- Organizer
  第72回応用応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011
- Author(s)
  M.Imura, R.Hayakawa, H.Oosato, E.Watanabe, D.Tsuya, M.Y.Liao, Y.Koide, H.Amanol.
- Organizer
  International Conference on New Diamond and Nano Carbons 2011 (NDNC2011)
- Place of Presentation
  Kunibiki Nesse, Matsue, Japan.
- Year and Date
  2011-05-19
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] AlN/Diamondヘテロ接合型電界効果トランジスタの開発2011
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
- Organizer
  日本金属学会2011年秋
- Place of Presentation
  沖縄コンベンセンションセンター
- Year and Date
  2011-11-06
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] AlN/Diamondヘテロ接合型ダイヤモンド電界効果トランジスタの開発2011
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
- Organizer
  第25回ダイヤモンドシンポジウム
- Place of Presentation
  産業技術総合研究所共用講堂
- Year and Date
  2011-12-07
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Demonstration of AlN/Diamond Heterostructure Field Effect Transistors2011
- Author(s)
  M.Imura, R.Hayakawa, H.Oosato, E.Watanabe, D.Tsuya, M.Y.Liao, Y.Koide, H.Amanol.
- Organizer
  MANA International Symposium 2011 (MANA Sympo.2011)
- Place of Presentation
  Epochal Tsukuba, Tsukuba, Japan.
- Year and Date
  2011-03-03
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Microstructure of AlN layer on (001) and (111) diamond substrates by metal organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Organizer
  MANA International Symposium 2010 (MANA Sympo.2010)
- Place of Presentation
  Epochal Tsukuba, Tsukuba, Japan.
- Year and Date
  2010-03-04
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] 様々な面のダイヤモンド基板上への窒化アルミニウム結晶成長2010
- Author(s)
  井村将隆、中島清美、廖梅勇、小出康夫、天野浩
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学.
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Microstructure of AlN layer on(001)and(111)diamond substrates by metal organic vapor phase epitaxy2010
- Author(s)
  井村将隆, 中島清美, 廖梅勇, 小出康夫, 天野浩
- Organizer
  MANA International Symposium 2010(MANA Sympo.2010)
- Place of Presentation
  Epochal Tsukuba, Tsukuba, Japan
- Year and Date
  2010-03-04
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] 様々な面のダイヤモンド基板上への窒化アルミニウム結晶成長2010
- Author(s)
  井村将隆、中島清美、廖梅勇、小出康夫、天野浩
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Growth of AlN on (001), (110), and (111) diamond substrates2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Organizer
  The 4th International Conference on New Diamond and Nano Carbons
- Place of Presentation
  Garden hotel, Suzhou, China
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Growth of AlN on (001), (110), and (111) diamond substrates2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Organizer
  The 4th International Conference on New Diamond and Nano Carbons (NDNC2010)
- Place of Presentation
  the Garden hotel, Suzhou, China.
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Growth of AlN on(001)diamond substrate by metal-organic vapor phase epitaxy2009
- Author(s)
  井村将隆, 中島清美, 廖梅勇, 小出康夫, 天野浩
- Organizer
  3rd International Conference on New Diamond and Nano Carbons(NDNC2009)
- Place of Presentation
  Traverse City, Michigan, USA
- Year and Date
  2009-06-09
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Microstructure analysis for growth process of AlN layer on (001) and (111) diamond substrates by a metal-organic vapor phase epitaxy2009
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Organizer
  The 17th American Conference on Crystal Growth and Epitaxy (ACCGE17)
- Place of Presentation
  Lake Geneva, Wisconsin, USA.
- Year and Date
  2009-08-12
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Analysis of polar direction of AlN grown by metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy2009
- Author(s)
  M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
- Organizer
  The 36th International Symposium on Compound Semiconductors (ISCS2009)
- Place of Presentation
  University of California, Santa Barbara, USA.
- Year and Date
  2009-09-01
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Microstructure analysis for growth process of AlN layer on(001)and(111)diamond substrates by a metal-organic vapor phase epitaxy2009
- Author(s)
  井村将隆, 中島清美, 廖梅勇, 小出康夫, 天野浩
- Organizer
  The 17th American Conference on Crystal Growth and Epitaxy(ACCGE17)
- Place of Presentation
  Lake Geneva, Wisconsin, USA
- Year and Date
  2009-08-12
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] MOVPE法による(001)面ダイヤモンド基板上の窒化アルミニウムの成長2009
- Author(s)
  井村将隆、中島清美、廖梅勇、小出康夫、天野浩
- Organizer
  第28回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖.
- Year and Date
  2009-07-10
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Analysis of polar direction of AlN grown by metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy2009
- Author(s)
  M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
- Organizer
  The 36th International Symposium on Compound Semiconductors(ISCS2009)
- Place of Presentation
  University of California, Santa Barbara, USA
- Year and Date
  2009-09-01
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] MOVPE法によるダイヤモンド基板上の窒化アルミニウムの成長2009
- Author(s)
  井村将隆
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学,茨城県つくば市
- Data Source
  KAKENHI-PROJECT-19656183
[Presentation] MOVPE法による(001)面ダイヤモンド基板上の窒化アルミニウムの成長2009
- Author(s)
  井村将隆、中島清美、廖梅勇、小出康夫、天野浩
- Organizer
  第28回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖
- Year and Date
  2009-07-10
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Growth of AlN on (001) diamond substrate by metal-organic vapor phase epitaxy2009
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Organizer
  The 3rd International Conference on New Diamond and Nano Carbons (NDNC2009)
- Place of Presentation
  Traverse City, Michigan, USA.
- Year and Date
  2009-06-09
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] ダイヤモンド基板によるショットキーフォトダイオード特性への影響2008
- Author(s)
  井村将隆
- Organizer
  第22回ダイヤモンドシンポジウム
- Place of Presentation
  早稲田大学大久保キャンパス,東京都
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] Vertical-type Schottky-Barrier Photodiode using p- / p+-Diamond Substrates2008
- Author(s)
  井村将隆
- Organizer
  2nd International Conference on New Diamond and Nano Carbons
- Place of Presentation
  Grand Hotel, Taipei, Taiwan
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] Devices design in solar-blind diamond photodetectors2008
- Author(s)
  M. Y. Liao, J. Alvarez, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano Carbons (NDNC2008)
- Place of Presentation
  Taipei, Taiwan(Outstanding Poster Award)
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] Development of flame sensor using diamond visible-blind ultraviolet photo- diode2008
- Author(s)
  Y. Koide, M. Y. Liao, J. Alvarez, M. Imura, K. Sueishi, and F. Yoshifusa
- Organizer
  New Diamond and Nano Carbons (NDNC2008)
- Place of Presentation
  Taipei, Taiwan
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] Diamond deep-UV photo- detector with high sensitivity and thermal stability2008
- Author(s)
  Y. Koide, M. Y. Liao, M. Imura, and J. Alvarez
- Organizer
  The 19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, (Diamond 2008), Abst. 13.1
- Place of Presentation
  Sitges, Spain
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] Schottky-barrier photodiode using p-diamond epilayer grown on p+-diamond substrates2008
- Author(s)
  井村将隆
- Organizer
  EMS27
- Place of Presentation
  ラフォーレ修善寺,静岡県伊豆市
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] Vertical-type Schottcky-Barrie Photodiode using p-Diamond Epilayer Grown on Heavily Boron-doped p+-Diamond Substrate2008
- Author(s)
  M. Imura, Y. Koide, M. Y. Liao, and J. Alvarez
- Organizer
  New Diamond and Nano Carbons (NDNC2008)
- Place of Presentation
  Taipei, Taiwan
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] 導電性p+-ダイヤモンド基板を用いたショットキーフォトダイオード2008
- Author(s)
  井村将隆
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学,愛知県春日井市
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] Fabrication of low on-resistance diamond field effect transistors
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano Carbons Conference (NDNC 2014)
- Place of Presentation
  Hyatt Regency Chicago, Chicago, Illinois, USA,
- Year and Date
  2014-05-25 – 2014-05-29
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] ウェットアニールダイヤモンド(111)上 ALD-Al2O3 膜を用いたMOS キャパシタの電気的特性
- Author(s)
  上田諒浩、宮田大輔、徳田規夫、井村将隆、小出康夫、小倉政彦、山崎聡、猪熊孝夫
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス.
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Frequency dispersion properties at Al2O3 and HfO2/H-terminated diamond interfaces
- Author(s)
  Y. Koide, J. Liu, M. Y. Liao, M. Imura, H. Oosato, and E. Watanabe
- Organizer
  New Diamond and Nano Carbons Conference (NDNC 2014)
- Place of Presentation
  Hyatt Regency Chicago, Chicago, Illinois, USA,
- Year and Date
  2014-05-25 – 2014-05-29
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] High-k/hydrogenated-diamond metal-insulator-semiconductor field effect transistors fabrication
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  International Conference on Diamond and Carbon Materials (ICDCM2014)
- Place of Presentation
  Melia Castilla, Madrid, Spain.
- Year and Date
  2014-09-07 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Hydrogenated-diamond logic inverter fabrication with enhancement-mode metal-insulator-semiconductor field effect transistor
- Author(s)
  劉江偉、M.Y.Liao、井村将隆、小出康夫
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス.
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] AlN/ (111)面ダイヤモンドヘテロ接合界面の微細構造観察と電気的特性評価
- Author(s)
  井村将隆、劉江偉、廖梅勇、小出康夫、松元隆夫、柴田直哉、幾原雄一
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス.
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano Carbons Conference (NDNC 2014)
- Place of Presentation
  Hyatt Regency Chicago, Chicago, Illinois, USA,
- Year and Date
  2014-05-25 – 2014-05-29
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Energy-Band Offset of AlN/Diamond(111) Heterojunction Determined by X- ray Photoelectron Spectroscopy
- Author(s)
  M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
- Organizer
  International Conference on Solid State Devices and Materials 2014 (SSDM2014)
- Place of Presentation
  Epochal Tsukuba, Tsukuba, Japan.
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Recent progress of field effect transistors by AlN/Diamond Heterostructure
- Author(s)
  M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
- Organizer
  The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014)
- Place of Presentation
  Fukuoka University, Fukuoka, Japan.
- Year and Date
  2014-08-24 – 2014-08-30
- Invited
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] 窒化物半導体の界面制御とナノラミネート特異構造を用いた電子デバイスの開発
- Author(s)
  小出康夫、井村将隆、劉江偉、M.Y.Liao
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス.
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] X線光電子分光法によるAlN/(111)ダイヤモンドヘテロ接合のエネルギーバンドオフセット評価
- Author(s)
  井村将隆、田中彰博、岩井秀夫、劉江偉、廖梅勇、小出康夫
- Organizer
  第33回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Year and Date
  2014-07-07 – 2014-07-09
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Atomically controlled diamond surfaces and interfaces
- Author(s)
  N. Tokuda, D. Miyata, A. Ueda, T. Chonan, T. Minamiyama, T. Inokuma, M. Imura, Y. Koide, M. Ogura, T. Makino, D. Takeuchi, and S. Yamsaki
- Organizer
  25th International Conference on Diamond and Carbon Materials
- Place of Presentation
  Melia Castilla, Madrid, Spain., (2014),
- Year and Date
  2014-09-07 – 2014-09-11
- Invited
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] HfO2 on hydrogenated-diamond for field effect transistors
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014)
- Place of Presentation
  Fukuoka University, Fukuoka, Japan.
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Atomic layer deposited Al2O3/diamond field effect transistors using surface p-channel prepared by thermal treatment with H2+NH3 gases
- Author(s)
  M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
- Organizer
  14th International Conference on Atomic Layer Deposition (ALD2014)
- Place of Presentation
  Hotel Granvia Kyoto, Kyoto, Japan.
- Year and Date
  2014-06-15 – 2014-06-18
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] “Diamond metal-insulator-semiconductor field effect transistor logic inverters
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  International Symposium on Single Crystal Diamond Electronics and the Fourth Chinese Vacuum Forum (SCDE 2014)
- Place of Presentation
  Xian China high-speed Le Grand Large Hotel, Xian, China.
- Year and Date
  2014-06-12 – 2014-06-17
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Atomic Layer Deposited HfO2/Al2O3 Multi-nano-layer on Diamond for Field Effect Transistor
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  The 4th Annual World Congress of Nano-S&T
- Place of Presentation
  Qingdao, Qingdao, China.
- Year and Date
  2014-10-29 – 2014-10-30
- Data Source
  KAKENHI-PROJECT-25420349

1. KOIDE Yasuo (70195650)

# of Collaborated Projects: 8 results

# of Collaborated Products: 167 results
2. 廖梅勇 (70528950)

# of Collaborated Projects: 3 results

# of Collaborated Products: 31 results
3. AMANO Hiroshi (60202694)

# of Collaborated Projects: 2 results

# of Collaborated Products: 23 results
4. 劉江偉 (30732119)

# of Collaborated Projects: 2 results

# of Collaborated Products: 22 results
5. MEIYONG Liao (00425555)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
6. TSUYA DAIJU (10469760)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
7. Oshima Takayoshi (60583151)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
8. TAKAHASHI Kazutoshi (30332183)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 奥村宏典 (80756750)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 堀田昌宏 (50549988)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. ALVAREZ Jose

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
12. KATO Yuji

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
13. NANISHI Yasushi

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
14. YAMAGUCHI Tomohiro

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
15. SUDA Jun

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
16. 荒木努

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
17. SANG Liwen

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

imura masataka 井村 将隆

IMURA Masataka 井村 将隆

Research Projects

Research Products

Co-Researchers

AlGaN系窒化物半導体と金属性デラフォサイト型酸化物電極を用いたUVC-LEDの高効率化Principal Investigator

Principal Investigator

Project Period (FY)

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Review Section

Research Institution

Fabrication of vertical AlN devices

Principal Investigator

Project Period (FY)

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Review Section

Research Institution

Develop a carrier control method for diamond using heterojunction doping technique

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of diamond electronic devices using AlN/diamond heterojunctionPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of diamond electron device using III-nitride nanolaminate singularity structure

Principal Investigator

Project Period (FY)

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Review Section

Research Institution

Investigation of Ferroelectric Property Based on Nitride/Oxide Stack Structure and Its Application for Diamond FETPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fabrication of an ultra-wide-band-gap semiconductor having a 7-eV band gap

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of new diamond electron device using huge polarization charge

Principal Investigator

Project Period (FY)

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Research Field

Research Institution

Energy Saving Normally-off p-Channel Diamond FET with High-Current OperationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of AlN/Diamond Heterojunction Field Effect TransistorPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Realization of ultra violet environment devices by using diamond and AlN hybrid structurePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

ワイドギャップ半導体ヘテロ接合における電荷移送ドーピング法の開発

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Preparation of guideline for sensing deep ultra-violet light using metal/diamond interfaces

Principal Investigator

Project Period (FY)

imura masataka 井村将隆

IMURA Masataka 井村将隆