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imura masataka  井村 将隆

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IMURA Masataka  井村 将隆

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Researcher Number 80465971
Other IDs
Affiliation (Current) 2022: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主任研究員
Affiliation (based on the past Project Information) *help 2016 – 2022: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主任研究員
2017: 国立研究開発法人物質・材料研究機構, 機能性材料拠点, 主任研究員
2017: 物質材料研究機構, 主任研究員
2015 – 2016: 国立研究開発法人物質・材料研究機構, 光・電子材料ユニットワイドバンドギャップ機能材料グループ, 主任研究員
2015: 国立研究開発法人物質・材料研究機構, 環境エネルギー材料部門, 主任研究員 … More
2015: 国立研究開発法人物質・材料研究機構, 環境・エネルギー材料部門, 主任研究員
2014: 国立研究開発法人物質・材料研究機構, 光・電子材料ユニットワイドギャップ機能材料グループ, 主任研究員
2011 – 2014: 独立行政法人物質・材料研究機構, その他部局等, 研究員
2013: 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 主任研究員
2012: 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 研究員
2009 – 2010: National Institute for Materials Science, 国際ナノアーキテクトニクス研究拠点, ICYS-MANA研究員
2008: 独立行政法人物質・材料研究機構, 若手国際研究拠点, NIMSポスドク研究員
2007: 独立行政法人物質・材料研究機構, センサ材料センター, NIMSポスドク研究員 Less
Review Section/Research Field
Principal Investigator
Electron device/Electronic equipment / Basic Section 21050:Electric and electronic materials-related
Except Principal Investigator
Structural/Functional materials / Electron device/Electronic equipment / Science and Engineering / Crystal engineering / Medium-sized Section 26:Materials engineering and related fields
Keywords
Principal Investigator
ダイヤモンド / 窒化アルミニウム / 電界効果トランジスタ / 電子デバイス・電子機器 / 電子デバイス / ヘテロ接合 / 高周波パワーデバイス / 窒化物半導体 / 原子層体積成長法 / ノーマリオフ型 … More / 酸化アルミニウム / 有機金属化合物気相成長法 / ヘテロ構造 / 転位 / 透過型電子顕微鏡 / 結晶成長 / デバイス設計 / 電子電気材料 / 光スイッチ / 環境材料 / III族窒化物半導体 / ヘテロエピタキシャル成長 / MOSFET / ゲート絶縁膜 / パワーデバイス / スパッタ法 / 酸化ジルコニウム / 酸化ハフニウム / 強誘電体 / パワースイッチングデバイス / MOCVD法 / MPCVD法 / スパッタ堆積法 / 酸化物半導体 / ダイオード / 電子エミッタ / マイクロ波プラズマ気相成長法 / 原子層堆積成長法 / PIN接合 … More
Except Principal Investigator
ダイヤモンド / ヘテロ接合 / 窒化アルミニウム / 電界効果トランジスタ / III族窒化物 / ナノラミネート構造 / III族窒化物 / トランジスタ / 深紫外線 / ショットキー型 / MSM型 / 永続的光伝導 / 光応答 / フォトディテクター / 利得 / ヘテロ接 / MOVPE / バンド不連 / p型ドーパント / バンド不連続 / 酸化物 / 酸化物界面 / 微細構造解析 / 2次元正孔伝導 / 水素終端表面 / 論理回路 / ゲート酸化膜 / 強誘電体 / ノーマリオフ動作 / 分極 / 酸化物ゲート / 窒化物ゲート / 高誘電ゲート / 異種接合 / 誘電体 / ゲート絶縁膜 / 誘電率 / 原子層堆積法 / Ⅲ族窒化物 / ナノラミネート薄膜 / II族窒化物 / 酸化ガリウム / 混晶 / 超格子 / 酸化アルミニウムガリウム / 超ワイドギャップ半導体 / 結晶成長 / 半導体物性 / ワイドギャップ半導体 / ヘテロ構造 Less
  • Research Projects

    (11 results)
  • Research Products

    (221 results)
  • Co-Researchers

    (23 People)
  •  Develop a carrier control method for diamond using heterojunction doping technique

    • Principal Investigator
      小出 康夫
    • Project Period (FY)
      2020 – 2023
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 26:Materials engineering and related fields
    • Research Institution
      National Institute for Materials Science
  •  AlN/ダイヤモンドpin接合を用いたダイヤモンド電子デバイスの高性能化Principal Investigator

    • Principal Investigator
      井村 将隆
    • Project Period (FY)
      2019 – 2021
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      National Institute for Materials Science
  •  Development of diamond electron device using III-nitride nanolaminate singularity structure

    • Principal Investigator
      KOIDE Yasuo
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      National Institute for Materials Science
  •  Investigation of Ferroelectric Property Based on Nitride/Oxide Stack Structure and Its Application for Diamond FETPrincipal Investigator

    • Principal Investigator
      Imura Masataka
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      National Institute for Materials Science
  •  Fabrication of an ultra-wide-band-gap semiconductor having a 7-eV band gap

    • Principal Investigator
      Oshima Takayoshi
    • Project Period (FY)
      2016 – 2017
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Crystal engineering
    • Research Institution
      Saga University
  •  Development of new diamond electron device using huge polarization charge

    • Principal Investigator
      Koide Yasuo
    • Project Period (FY)
      2013 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      National Institute for Materials Science
  •  Energy Saving Normally-off p-Channel Diamond FET with High-Current OperationPrincipal Investigator

    • Principal Investigator
      Imura Masataka
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      National Institute for Materials Science
  •  Development of AlN/Diamond Heterojunction Field Effect TransistorPrincipal Investigator

    • Principal Investigator
      IMURA Masataka
    • Project Period (FY)
      2011 – 2012
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      National Institute for Materials Science
  •  Realization of ultra violet environment devices by using diamond and AlN hybrid structurePrincipal Investigator

    • Principal Investigator
      IMURA Masataka
    • Project Period (FY)
      2009 – 2010
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      National Institute for Materials Science
  •  ワイドギャップ半導体ヘテロ接合における電荷移送ドーピング法の開発

    • Principal Investigator
      小出 康夫
    • Project Period (FY)
      2007 – 2008
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Structural/Functional materials
    • Research Institution
      National Institute for Materials Science
  •  Preparation of guideline for sensing deep ultra-violet light using metal/diamond interfaces

    • Principal Investigator
      KOIDE Yasuo
    • Project Period (FY)
      2006 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Structural/Functional materials
    • Research Institution
      National Institute for Materials Science

All 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 Other

All Journal Article Presentation Book Patent

  • [Book] Study of Grain Boundary Character, Chapter 32017

    • Author(s)
      Banal Ryan G.、Imura Masataka、Koide Yasuo
    • Total Pages
      15
    • Publisher
      IntechOpen
    • ISBN
      9789535128625
    • Data Source
      KAKENHI-PLANNED-16H06419
  • [Book] Study of Grain Boundary Character, Chapter 32016

    • Author(s)
      Ryan G. Banal, Masataka Imura and Yasuo Koide
    • Publisher
      INTECH
    • Data Source
      KAKENHI-PROJECT-25249054
  • [Book] Study of Grain Boundary Character, Chapter 32016

    • Author(s)
      Ryan G. Banal, Masataka Imura and Yasuo Koide
    • Publisher
      INTECH open science/open minds
    • Data Source
      KAKENHI-PLANNED-16H06419
  • [Journal Article] Precise characterization of atomic-scale corrosion of single crystal diamond in H2 plasma based on MEMS/NEMS2020

    • Author(s)
      Wu Haihua、Zhang Zilong、Sang Liwen、Li Tiefu、You Jianqiang、Imura Masataka、Koide Yasuo、Liao Meiyong
    • Journal Title

      Corrosion Science

      Volume: 170 Pages: 108651-108651

    • DOI

      10.1016/j.corsci.2020.108651

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04501, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-20H02212
  • [Journal Article] Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors2020

    • Author(s)
      Sasama Yosuke、Kageura Taisuke、Komatsu Katsuyoshi、Moriyama Satoshi、Inoue Jun-ichi、Imura Masataka、Watanabe Kenji、Taniguchi Takashi、Uchihashi Takashi、Takahide Yamaguchi
    • Journal Title

      Journal of Applied Physics

      Volume: 127 Pages: 185707-185707

    • DOI

      10.1063/5.0001868

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K04501, KAKENHI-PROJECT-20H05621, KAKENHI-PROJECT-19H02592, KAKENHI-PROJECT-19H02605, KAKENHI-PROJECT-19J12696, KAKENHI-PROJECT-19K15030
  • [Journal Article] Threshold Voltage Instability of Diamond Metal-Oxide-Semiconductor Field-Effect Transistors Based on 2D Hole Gas2019

    • Author(s)
      M. Yang, L. Sang, M. Y. Liao, M. Imura, H. Li, Y. Koide
    • Journal Title

      Physica Status Solidi (A) Applications and Materials Science

      Volume: 216 Pages: 1900538-1900538

    • DOI

      10.1002/pssa.201900538

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06419
  • [Journal Article] Fabrication of coherent <i>γ</i>-Al<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> superlattices on MgAl<sub>2</sub>O<sub>4</sub> substrates2019

    • Author(s)
      Y. Kato, M. Imura, Y. Nakayama, M. Takeguchi, and T. Oshima
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 6 Pages: 065503-065503

    • DOI

      10.7567/1882-0786/ab2196

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K04501
  • [Journal Article] Energy‐Efficient Metal?Insulator?Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases2019

    • Author(s)
      Liao Meiyong、Sang Liwen、Shimaoka Takehiro、Imura Masataka、Koizumi Satoshi、Koide Yasuo
    • Journal Title

      Advanced Electronic Materials

      Volume: 1 Pages: 1800832-1800832

    • DOI

      10.1002/aelm.201800832

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18K14141, KAKENHI-PROJECT-15H03999, KAKENHI-PROJECT-19K04501, KAKENHI-PLANNED-16H06419
  • [Journal Article] Surface and bulk electronic structures of unintentionally and Mg-dopedIn0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy2018

    • Author(s)
      M. Imura, S. Tsuda, H. Takeda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
    • Journal Title

      Journal of Applied Physics

      Volume: 123 Pages: 095701-1

    • DOI

      10.1063/1.5016574

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K06330
  • [Journal Article] Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal-Organic Vapor Phase Epitaxy2018

    • Author(s)
      M. Imura, Y. Ota, R.G. Banal, M. Liao, Y. Nakayama, M. Takeguchi, and Y. Koide
    • Journal Title

      Physica Status Solidi A

      Volume: 215 Pages: 1800282-8

    • DOI

      10.1002/pssa.201800282

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Journal Article] A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO 2/diamond interface2018

    • Author(s)
      Kongping Wu, Meiyong Liao, Liwen Sang, Jiangwei Liu, Masataka Imura, Haitao Ye, Yasuo Koide
    • Journal Title

      J. Appl. Phys.

      Volume: 123 Pages: 161599-1

    • DOI

      10.1063/1.5002176

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K13806, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-15H03999, KAKENHI-PROJECT-16K06330
  • [Journal Article] Annealing effects on hydrogenated diamond NOR logic circuits2018

    • Author(s)
      Jiangwei Liu, Hirotaka, Oosato, Meiyong Liao, Masataka Imura, Eiichiro Watanabe, Yasuo Koide
    • Journal Title

      Appl. Phys. Lett.

      Volume: 112 Pages: 153501-153501

    • DOI

      10.1063/1.5022590

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K13806, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K06330
  • [Journal Article] Development of AlN/Diamond heterostructure formation and unique interface property2018

    • Author(s)
      井村将隆,バナルライアン,廖梅勇,松本隆夫,熊本明仁,柴田直哉,幾原雄一,小出康夫
    • Journal Title

      JJACG

      Volume: 45 Issue: 1 Pages: 1-9

    • DOI

      10.19009/jjacg.3-45-1-05

    • NAID

      130006727551

    • ISSN
      0385-6275, 2187-8366
    • Language
      Japanese
    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06419
  • [Journal Article] α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire2018

    • Author(s)
      Takayoshi Oshima, Yuji Kato, Masataka Imura, Yoshiko Nakayama, Masaki Takeguchi
    • Journal Title

      Applied Physics Express

      Volume: 印刷中

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K13673
  • [Journal Article] Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer2018

    • Author(s)
      T. Matsumoto, H. Kato, T. Makino, M. Ogura, D. Takeuchi, S. Yamasaki, M. Imura, A. Ueda, T. Inokuma, and N. Tokuda
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 4S Pages: 04FR01-04FR01

    • DOI

      10.7567/jjap.57.04fr01

    • NAID

      210000149007

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330, KAKENHI-PROJECT-17H02786
  • [Journal Article] Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters2017

    • Author(s)
      J.W. Liu, M.Y. Liao, M. Imura, R.G. Banal, and Y. Koide
    • Journal Title

      JOURNAL OF APPLIED PHYSICS

      Volume: 121 Pages: 224502-11

    • DOI

      10.1063/1.4985066

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K18096
  • [Journal Article] Logic circuits with hydrogenated diamond field-effect transistors2017

    • Author(s)
      J. Liu, H. Ohsato, M. Liao, M. Imura, E. Watanabe, and Y. Koide
    • Journal Title

      IEEE ELECTRON DEVICE LETTERS

      Volume: 38 Pages: 922-925

    • DOI

      10.1109/led.2017.2702744

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K18096
  • [Journal Article] Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al2O3 Stack Gate2017

    • Author(s)
      R.G. Banal, M. Imura, H. Ohata, M. Liao, J. Liu, and Y. Koide
    • Journal Title

      PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

      Volume: 214 Pages: 1700463-1700463

    • DOI

      10.1002/pssa.201700463

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K18096
  • [Journal Article] Nanometer-thin ALD-Al2O3 for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE2017

    • Author(s)
      Ryan G. Banal, Masataka Imura,1, Daiju Tsuya, Hideo Iwai, and Yasuo Koide
    • Journal Title

      Physica Status Solidi A

      Volume: 217 Pages: 1600727-1600727

    • DOI

      10.1002/pssa.201600727

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-16K06330
  • [Journal Article] Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy2017

    • Author(s)
      M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
    • Journal Title

      Journal of Applied Physics

      Volume: 121 Pages: 095703-095703

    • DOI

      10.1063/1.4977201

    • Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03559, KAKENHI-PROJECT-26600090, KAKENHI-PROJECT-16K06330, KAKENHI-PLANNED-16H06419
  • [Journal Article] Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel,2017

    • Author(s)
      Masataka Imura, Ryan G. Banal, Meiyong Liao, Jiangwei Liu, Takashi Aizawa, Akihiro Tanaka, Hideo Iwai, Takaaki Mano, and Yasuo Koide
    • Journal Title

      JOURNAL OF APPLIED PHYSICS

      Volume: 121 Pages: 025702-025702

    • DOI

      10.1063/1.4972979

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-15H03999, KAKENHI-PROJECT-16K06330, KAKENHI-PROJECT-16K18096
  • [Journal Article] Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors2016

    • Author(s)
      Ryan G. Banal, Masataka Imura, Jiangwei Liu, and Yasuo Koide,
    • Journal Title

      Journal of Applied Physics

      Volume: 120 Pages: 115307-115307

    • DOI

      10.1063/1.4962854

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-16K06330, KAKENHI-PROJECT-16K18096
  • [Journal Article] High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors,2016

    • Author(s)
      J. W. Liu, M. Y. Liao, M. Imura, and Y.Koide
    • Journal Title

      Journal of Applied Physics

      Volume: 120 Pages: 124504-124504

    • DOI

      10.1063/1.4962851

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-16K06330, KAKENHI-PROJECT-16K18096
  • [Journal Article] Formation Mechanism and Elimination of Small‐Angle Formation Mechanism and Elimination of Small‐Angle Grain Boundary in AlN Grown on (0001) Sapphire Substrate2016

    • Author(s)
      R.G. Banal, M. Imura, Y. Koide
    • Journal Title

      INTECH

      Volume: Chapter3 Pages: 43-58

    • DOI

      10.5772/66177

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Journal Article] Influence of surface structure of (0001) sapphire substrate on the elimination of small-angle grain boundary in AlN epilayer2015

    • Author(s)
      R. G. Banal, M. Imura, and Y. Koide
    • Journal Title

      Aip Advances

      Volume: 5 Pages: 0971431-8

    • DOI

      10.1063/1.4931159

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Journal Article] Control of normally-on/off in hydrogenated-diamond metal-insulator-semiconductor filed effect transistor2015

    • Author(s)
      J. W. Liu, M. Y. Liao, M. Imura, T. Matsumoto, N. Shibata, Y. Ikuhara, and Y. Koide
    • Journal Title

      J. Appl. Phys.

      Volume: 118 Pages: 115704-115704

    • DOI

      10.1063/1.4930294

    • Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420349, KAKENHI-PROJECT-26289234, KAKENHI-PLANNED-25106003, KAKENHI-PROJECT-25249054
  • [Journal Article] Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures2015

    • Author(s)
      M.Y. Liao, J.W. Liu, L. W. Sang. D. Coatchup, J. L. Li, M. Imura, Y. Koide, H. Ye
    • Journal Title

      Appl. Phys. Lett.

      Volume: 106 Pages: 083506-083506

    • DOI

      10.1063/1.4913597

    • Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03999, KAKENHI-PROJECT-25420349, KAKENHI-PROJECT-25249054
  • [Journal Article] Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond2015

    • Author(s)
      J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide
    • Journal Title

      Dia. Relat. Mater.

      Volume: 54 Pages: 5558-5558

    • DOI

      10.1016/j.diamond.2014.10.004

    • Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420349, KAKENHI-PROJECT-25249054
  • [Journal Article] Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material2014

    • Author(s)
      J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, and Y. Koide
    • Journal Title

      Journal of Physics D

      Volume: 47 Pages: 245102-15

    • DOI

      10.1088/0022-3727/47/24/245102

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Journal Article] Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor2014

    • Author(s)
      J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, and Y. Koide
    • Journal Title

      Appl. Phys. Lett.

      Volume: 105 Pages: 082110-1

    • DOI

      10.1063/1.4894291

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-25420349, KAKENHI-PROJECT-25249054
  • [Journal Article] Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric2014

    • Author(s)
      J. W. Liu, M. Y. Liao, M. Imura, A. Tanaka, H. Iwai, and Y. Koide
    • Journal Title

      Sci. Reports

      Volume: 4 Pages: 6395-1

    • DOI

      10.1038/srep06395

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-25420349, KAKENHI-PROJECT-25249054
  • [Journal Article] Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material2014

    • Author(s)
      J. Liu, L. Meiyong, M. Imura, E. Watanabe, H. Oosato, Y. Koide
    • Journal Title

      J. Phys. D: Appl. Phys.

      Volume: 47 Pages: 245102-1

    • DOI

      10.1016/j.diamond.2013.06.005

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-25249054
  • [Journal Article] Interfacial chemical bonding state and band alignment of CaF2/hydrogen-terminated diamond heterojunction2013

    • Author(s)
      J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, and Y. Koide
    • Journal Title

      J. Appl. Phys.

      Volume: 113

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Journal Article] Normally-off HfO2-gated diamond field effect transistors2013

    • Author(s)
      J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
    • Journal Title

      Applied Physics Letters

      Volume: 103 Pages: 929051-3

    • DOI

      10.1063/1.4820143

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-25420349
  • [Journal Article] AlN/ダイヤモンドヘテロ接合FETとMEMSスイッチ2013

    • Author(s)
      小出 康夫,廖 梅勇,井村 将隆
    • Journal Title

      応用電子物性分科会誌

      Volume: 第19巻 Pages: 7-13

    • Data Source
      KAKENHI-PROJECT-25249054
  • [Journal Article] Interfacial electronic band alignment of Ta2O5/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy2013

    • Author(s)
      J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide
    • Journal Title

      Diamond and Related Materials

      Volume: 102 Pages: 24-27

    • DOI

      10.1063/1.4798289

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23760319, KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-25420349
  • [Journal Article] Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors2013

    • Author(s)
      J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, and Y. Koide
    • Journal Title

      Journal of Applied Physics

      Volume: 114 Pages: 841081-7

    • DOI

      10.1063/1.4819108

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-25420349
  • [Journal Article] Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <11-20> and <1-100> Zone-Axes of AlN for Polarity Determination2013

    • Author(s)
      M. Imura, U. Gautam, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Journal Article] ダイヤモンドを用いた光・電子デバイスの開発2013

    • Author(s)
      小出 康夫,廖 梅勇,井村 将隆
    • Journal Title

      スマートプロセス学会誌

      Volume: 第2巻 Pages: 224-229

    • NAID

      10031200069

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249054
  • [Journal Article] Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric2013

    • Author(s)
      J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide
    • Journal Title

      Appl. Phys. Lett.

      Volume: 102

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Journal Article] Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <11-20> and <1-100> Zone-Axes of AlN for Polarity Determination2013

    • Author(s)
      M. Imura, U. Gautam, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Journal Article] ダイヤモンドを用いた光・電子デバイスの開発2013

    • Author(s)
      小出康夫、廖梅勇、井村将隆
    • Journal Title

      スマートプロセス学会誌

      Volume: 2 Pages: 224-229

    • NAID

      10031200069

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Journal Article] Interfacial chemical bonding state and band alignment of CaF2 hydrogenterminated diamond heterojunction2013

    • Author(s)
      J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, and Y. Koide
    • Journal Title

      J. Appl. Phys.

      Volume: 113 Pages: 1237061-6

    • DOI

      10.1063/1.4798366

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23760319, KAKENHI-PROJECT-25249054
  • [Journal Article] 窒化アルミニウム/ダイヤモンドヘテロ接合を用いた電界効果トランジスタ2012

    • Author(s)
      井村将隆、廖梅勇、小出康夫
    • Journal Title

      NEW DIAMOND 105

      Volume: 28 Pages: 36-38

    • NAID

      40019318460

    • Data Source
      KAKENHI-PROJECT-23760319
  • [Journal Article] Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond2012

    • Author(s)
      J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
    • Journal Title

      Applied Physics Letters

      Volume: 101

    • DOI

      10.1063/1.4772985

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Journal Article] Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond2012

    • Author(s)
      J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
    • Journal Title

      Appl. Phys. Lett.

      Volume: 101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Journal Article] Integration of high-dielectric constant Ta2O5 oxides on diamond for power2012

    • Author(s)
      S. H. Cheng, L. W. Sang, M. Y. Liao, J. W. Liu, M. Imura, H. D. Li, and Y. Koide
    • Journal Title

      Applied Physics Letter

      Volume: 101 Pages: 232907-232907

    • DOI

      10.1063/1.4770059

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23760319, KAKENHI-PROJECT-24760032
  • [Journal Article] Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices2012

    • Author(s)
      S. H. Cheng, L. W. Sang, M. Y. Liao, J. W. Liu, M. Imura, H. D. Li, and Y. Koide
    • Journal Title

      Appl. Phys. Lett.

      Volume: 101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Journal Article] Development of AlN/diamond heterojunction field effect transistors2012

    • Author(s)
      M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, T. Nagata, M. Y. Liao, Y. Koide, J. Yamamoto, K. Ban, M. Iwaya, and H. Amano
    • Journal Title

      Diamond and Related Materials

      Volume: 5 Pages: 206-209

    • DOI

      10.1016/j.diamond.2012.01.020

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Journal Article] 窒化アルミニウム/ダイヤモンドヘテロ接合を用いた電界効果トランジスタ2012

    • Author(s)
      井村将隆、廖梅勇、小出康夫
    • Journal Title

      NEW DIAMOND

      Volume: 第105号, Vol. 28 No. 2 Pages: 36-38

    • NAID

      40019318460

    • Data Source
      KAKENHI-PROJECT-23760319
  • [Journal Article] Development of AlN/diamond heterojunction field effect transistors2012

    • Author(s)
      M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, T. Nagata, M. Y. Liao, Y. Koide, J. Yamamoto, K. Ban, M. Iwaya, and H. Amano
    • Journal Title

      Diam. Relat. Mat.

      Volume: 24 Pages: 206-209

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Journal Article] Demonstration of Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011

    • Author(s)
      M. Imura, R. Hayakawa, E. Watanabe, M. Y. Liao, Y. Koide, and H. Amano
    • Journal Title

      Physica Status Solidi (RRL)

      Volume: 5 Pages: 125-127

    • DOI

      10.1002/pssr.201105024

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Journal Article] Demonstration of diamond field effect transistors by AlN/diamond heterostructure2011

    • Author(s)
      M. Imura, R. Hayakawa, E. Watanabe, M. Y. Liao, Y. Koide, and H. Amano
    • Journal Title

      Phys. Status Solidi-Rapid Res. Lett.

      Volume: 5 Pages: 125-127

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Journal Article] Demonstration of Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011

    • Author(s)
      M.Imura, R.Hayakawa, E.Watanabe, M.Y.Liao, Y.Koide, H.Amano
    • Journal Title

      Physica Status Solidi (RRL) 3

      Pages: 125-127

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Journal Article] Demonstration of Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011

    • Author(s)
      M.Imura, R.Hayakawa, E.Watanabe, M.Y.Liao, Y.Koide, H.Amano
    • Journal Title

      Physica Status Solidi (RRL)

      Volume: 3 Pages: 125-127

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Journal Article] Analysis of polar direction of AlN grown on(0001)sapphire and 6H-Si C substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy2010

    • Author(s)
      M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
    • Journal Title

      Physica Status Solidi(c) (In press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Journal Article] Growth mechanism of c-axis-oriented AlN on(111)diamond substrates by metal-organic vapor phase epitaxy2010

    • Author(s)
      M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
    • Journal Title

      Journal of Crystal Growth 312

      Pages: 1325-1328

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Journal Article] Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy2010

    • Author(s)
      M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
    • Journal Title

      Physica Status Solidi (c)

      Volume: 7 Pages: 2365-2367

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Journal Article] Microstructure of AlN with two-domain structure on(001)diamond substrate grown by metal-organic vapor phase epitaxy2010

    • Author(s)
      M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
    • Journal Title

      Diamond & Related Materials 10

      Pages: 131-133

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Journal Article] Growth mechanism of c-axis oriented AlN on(001)diamond substrates by metal-organic vapor phase epitaxy2010

    • Author(s)
      M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
    • Journal Title

      Journal of Crystal Growth 312

      Pages: 368-372

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Journal Article] Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy2010

    • Author(s)
      M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
    • Journal Title

      Journal of Crystal Growth

      Volume: 312 Pages: 1325-1328

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Journal Article] Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy2010

    • Author(s)
      M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
    • Journal Title

      Physica Status Solidi (c) 7

      Pages: 2365-2367

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Journal Article] Growth mechanism of c-axis oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy2010

    • Author(s)
      M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
    • Journal Title

      Journal of Crystal Growth 312

      Pages: 368-372

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Journal Article] Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy2010

    • Author(s)
      M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
    • Journal Title

      Diamond, Related Materials 10

      Pages: 131-133

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Journal Article] Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy2010

    • Author(s)
      M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
    • Journal Title

      Diamond & Related Materials

      Volume: 10 Pages: 131-133

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Journal Article] Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy2010

    • Author(s)
      M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
    • Journal Title

      Journal of Crystal Growth 312

      Pages: 1325-1328

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Journal Article] Growth mechanism of c-axis oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy2010

    • Author(s)
      M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
    • Journal Title

      Journal of Crystal Growth

      Volume: 312 Pages: 368-372

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Journal Article] Ultraviolet Detectors Based on Ultraviolet- Ozone Modified Hydrogenated Diamond Surfaces2009

    • Author(s)
      Jose Alvarez, Meiyong Liao, Jean-Paul Kleider, Yasuo Koide, and Masataka Imura
    • Journal Title

      Appl. Phys. Express vol. 2, No. 6

    • NAID

      10025086818

    • Data Source
      KAKENHI-PROJECT-18360341
  • [Journal Article] Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on p+-Diamond Substrates2009

    • Author(s)
      M. Imura, M. Y. Liao, J. Alvarez, and Y. Koide.
    • Journal Title

      Diamond Relat. Mater. vol. 18

      Pages: 296-298

    • Data Source
      KAKENHI-PROJECT-18360341
  • [Journal Article] Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on p+-Diamond Substrates2008

    • Author(s)
      Masataka Imura
    • Journal Title

      Diamond Relat. Mater 18

      Pages: 296-298

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360341
  • [Journal Article] Vertical-type Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on Heavily Boron-doped p+-Diamond Substrate2008

    • Author(s)
      Masataka Imura
    • Journal Title

      Diamond Relat. Mater 17

      Pages: 1234-1243

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360341
  • [Journal Article] Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors2008

    • Author(s)
      M. Y. Liao, Y. Koide, J. Alvarez, M. Imura, and J. P. Kleider
    • Journal Title

      Phys. Rev. B vol. 78

    • Data Source
      KAKENHI-PROJECT-18360341
  • [Journal Article] Vertical-type Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on Heavily Boron-doped p+-Diamond Substrate2008

    • Author(s)
      M. Imura, M. Y. Liao, J. Alvarez, and Y. Koide
    • Journal Title

      Diamond Relat. Mater. vol. 17

      Pages: 1234-1243

    • Data Source
      KAKENHI-PROJECT-18360341
  • [Journal Article] Submicron metal-semiconductor-metal dia- mond photodiodes toward improving the responsivity2007

    • Author(s)
      M. Y. Liao, J. Alvarez, M. Imura, and Y. Koide
    • Journal Title

      Appl. Phys. Lett. vol. 91

      Pages: 163510-163510

    • Data Source
      KAKENHI-PROJECT-18360341
  • [Journal Article] Growth mechanism of c-axis oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy

    • Author(s)
      Masataka Imura
    • Journal Title

      Journal of Crystal Growth

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19656183
  • [Patent] ノーマリーオフ特性を有する水素化ダイヤモンドMISFETの製造方法2015

    • Inventor(s)
      劉江偉 小出康夫 リャオメイヨン 井村将隆
    • Industrial Property Rights Holder
      劉江偉 小出康夫 リャオメイヨン 井村将隆
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2015-174571
    • Filing Date
      2015-09-04
    • Data Source
      KAKENHI-PROJECT-25249054
  • [Patent] 電界効果トランジスタ及びその製造方法2010

    • Inventor(s)
      井村将隆、小出康夫、リャオメイヨン、早川竜馬、天野浩
    • Industrial Property Rights Holder
      井村将隆
    • Industrial Property Number
      2010-231352
    • Filing Date
      2010-10-14
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Patent] 電界効果トランジスタ及びその製造方法2010

    • Inventor(s)
      井村将隆、早川竜馬、廖梅勇、小出康夫、天野浩
    • Industrial Property Rights Holder
      物質・材料研究機構
    • Industrial Property Number
      2010-231352
    • Filing Date
      2010-10-14
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] Development of Atomic Layer Deposition Technique of AlxGa1-xN for Hydrogen-terminated diamond MIS-FETs2021

    • Author(s)
      Masataka Imura, Yasuo Koide
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H00313
  • [Presentation] Ⅲ族窒化物ナノラミネート特異構造を用いたダイヤモンド電子デバイスの開発2021

    • Author(s)
      小出康夫, 劉江偉, 井村将隆, 廖梅勇
    • Organizer
      2021年第68回応用物理学会春季学術講演会 シンポジウム「特異構造の結晶科学~学術とエレクトロニクス展開~」
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00313
  • [Presentation] Ⅲ族窒化物ナノラミネート特異構造を用いたいたダイヤモンド電子デバイスの開発2021

    • Author(s)
      小出 康夫、劉 江偉、井村 将隆、廖 梅勇
    • Organizer
      2021第68回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06419
  • [Presentation] 真空紫外線及び70MeV陽子線に対して高い耐性を有すダイヤモンドSBD2020

    • Author(s)
      井村 将隆, 外川 学, 奥村 宏典, 西永 慈郎, 宮原 正也, 松木 武雄, 小出 康夫
    • Organizer
      第39回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-19K04501
  • [Presentation] ワイドギャップ半導体異種接合とデバイス応用2020

    • Author(s)
      小出康夫,井村将隆,劉 江偉,廖 梅勇
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06419
  • [Presentation] ワイドギャップ半導体異種接合とデバイス応用2020

    • Author(s)
      小出康夫,井村将隆,劉 江偉,廖 梅勇
    • Organizer
      第81回応用物理学会秋季学術講演会 シンポジウム「第3世代異種材料接合と膜成長自在制御:界面ナノ・キベルネテス(舵手)」
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00313
  • [Presentation] Challenge to development of III-nitride Nanolaminates/Diamond Heterojunciton devices2020

    • Author(s)
      Y. Koide, M. Imura, J. Liu, and M. Liao
    • Organizer
      Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06419
  • [Presentation] 高放射線耐性半導体検出器の開発2020

    • Author(s)
      井村 将隆
    • Organizer
      茨城テックプランター2020
    • Data Source
      KAKENHI-PROJECT-19K04501
  • [Presentation] ダイヤモンド半導体のこれから2020

    • Author(s)
      井村 将隆
    • Organizer
      第1回ダイヤモンド・DLC関連若手研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-19K04501
  • [Presentation] InGaNの表面-バルク電子状態評価2019

    • Author(s)
      井村将隆, 津田俊輔, 長田貴弘, 山下良之, 吉川英樹, 小林啓介, 小出康夫, 太田優一, 村田秀信, 山口智広, 金子昌充, 荒木努, 名西やすし
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04501
  • [Presentation] Electronic structures of InGaN alloys2019

    • Author(s)
      M. Imura and Y. Ota
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04501
  • [Presentation] メタルマスクを用いた(111)ダイヤモンド選択成長と水素終端ダイヤモンドFETへの応用2019

    • Author(s)
      井村将隆, 大里啓孝, 廖梅勇, 小出康夫
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] 原子配列に対するInGaNの電子状態依存性評価2019

    • Author(s)
      井村将隆, 太田優一
    • Organizer
      第38回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-19K04501
  • [Presentation] Selective growth of diamond (111) by metal mask and its application for hydrogen terminated diamond FET2019

    • Author(s)
      M. Imura, H. Oosato, M. Y. Liao, and Y. Koide
    • Organizer
      13th Conference on New Diamond and Nano Carbons (NDNC2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04501
  • [Presentation] InGaN系窒化物半導体の表面ーバルク電子状態評価2018

    • Author(s)
      井村将隆, 小出康夫, 荒木努, 名西やすし
    • Organizer
      第110回研究会・特別公開シンポジウム 「紫外発光デバイスの最前線と将来展望」
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] Enhancement-mode hydrogenated diamond MOSFETs,“29th International Conference on Diamond and Carbon Materials2018

    • Author(s)
      J. Liu, M. Liao, M. Imura, Y. Koide
    • Organizer
      ICDCM 2018
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06419
  • [Presentation] コヒーレントα-Al2O3/Ga2O3超格子の作製2018

    • Author(s)
      加藤勇次,井村将隆,中山佳子,竹口雅樹,大島孝仁
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K13673
  • [Presentation] 硬X線光電子分光法を用いたアンドープInxGa1-xN(0≦x≦1)の表面ーバルク電子状態評価2018

    • Author(s)
      井村将隆, 津田俊輔, 長田貴弘, 吉川英樹, 山下良之, 小林啓介, 小出康夫, 山口智広, 荒木努, 名西やすし
    • Organizer
      第37回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] Systematic investigation of surface and bulk electronic structures of unintentionally-doped InxGa1-xN (0≦x≦1) epilayers by hard X-ray photoelectron spectroscopy2018

    • Author(s)
      M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, Y. Anli, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, T. Araki, and Y. Nanishi
    • Organizer
      International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] 窒化アルミニウム成膜時のIn Situ測定2018

    • Author(s)
      井村将隆
    • Organizer
      第65回応用物理学会春季学術講演会ランチョンセミナー
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] 硬X線光電子分光法を用いたInGaN系窒化物半導体の表面ーバルク電子状態評価2018

    • Author(s)
      井村将隆, 小出康夫, 荒木努, 名西やすし
    • Organizer
      第10回ナノ構造・エピタキシャル成長講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] High-quality diamond epitaxial layer growth and electron devices application2018

    • Author(s)
      Y. Koide, J.W. Liu, M. Imura, and M.Y. Liao
    • Organizer
      SSDM2018
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06419
  • [Presentation] Development of AlN/Diamond heterostructure formation and unique interface property2018

    • Author(s)
      M. Imura, M. Y. Liao, and Y. Koide
    • Organizer
      European Materials Research Society (E-MRS) 2018 Fall Meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] III-nitride/diamond heterojunction2018

    • Author(s)
      M. Imura, M. Y. Liao, and Y. Koide
    • Organizer
      4th JST Sakura Science Workshop
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] Electrical properties of H-terminated diamond FETs with AlN gate2018

    • Author(s)
      Y. Koide, R. G. Banal, M. Imura, J.W. Liu, and M.Y. Liao
    • Organizer
      4th E-MRS & MRS-J, Symposium
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06419
  • [Presentation] Mgドーピングによる高In組成InGaNの表面-バルク電子状態変化2018

    • Author(s)
      井村将隆, 津田俊輔, 長田貴弘, 山下良之, 吉川英樹, 小林啓介, 小出康夫, 山口智広, 金子昌充, 上松尚, 荒木努, 名西やすし
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] Microstructure of In0.20Ga0.80N nanowires on Si (111) substrate evaluated by aberration-corrected scanning transmission electron microscopy2017

    • Author(s)
      M. Imura, R. G. Banal, Y. Koide, Y. Nakayama, M. Takeguchi, S. Mizutani, T. Tabata, S. Nakagawa, Y. Honda, M. Yamaguchi, and H. Amano
    • Organizer
      The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel2017

    • Author(s)
      M. Imura, R. G. Ryan, M. Liao, J. Liu, T. Aizawa, A. Tanaka, H. Iwai, T. Mano, Y. Koide
    • Organizer
      The 11th Conference on New Diamond and Nano Carbons (NDNC2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] High-current triple-gate H-diamond MOSFET2017

    • Author(s)
      KOIDE, Yasuo, LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka.
    • Organizer
      New Diamond and Nano Carbon Conference, (NDNC2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06419
  • [Presentation] Vacuum-Ultra-Violet Diamond-based Photodetector for high-power excimer lamp2017

    • Author(s)
      M. Imura, M. Liao, and Y. Koide
    • Organizer
      International Workshop on UV Materials and Devices 2017 (IWUMD2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] Normally-on/off control of diamond FETs and logic circuit demonstration2017

    • Author(s)
      Y. Koide, J.W. Liu, M. Imura, and M.Y. Liao
    • Organizer
      E-MRS, Symposium O, Diamond for electron devices II, (Warsaw, Poland)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06419
  • [Presentation] Microstructure and electrical property of AlN/Diamond(111) heterojunction2017

    • Author(s)
      M. Imura, M. Liao, and Y. Koide
    • Organizer
      OIST Diamond WS2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy2017

    • Author(s)
      M. Imura, S. Tsuda, T. Nagata, A. L. Yang, Y. Yamashita, H. Yoshikawa,Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
    • Organizer
      12th International Conference on Nitride Semiconductors (ICNS12)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] Improvement on electrical properties of H-terminated diamond FETs using sputter deposition AlN/ atomic layer deposition Al2O3 stack gate structure2017

    • Author(s)
      M. Imura, R. G. Banal, J. Liu, M. Liao, and Y. Koide
    • Organizer
      28th International Conference on Diamond and Carbon Materials (ICDCM2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] Microstructure of Boron-doped AlN Epitaxial Layer Grown by Metal-Organic Vapor Phase Epitaxy2017

    • Author(s)
      M. Imura, Y. Ota, R. G. Banal, and Y. Koide
    • Organizer
      29th International Conference on Defects in Semiconductors (ICDS2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] III-nitride/diamond hybrid systems2017

    • Author(s)
      M. Imura, M. Liao, and Y. Koide
    • Organizer
      3N-Lab Workshop Tsukuba-Grenoble for Diamond and GaN
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] Structural Property of Boron-doped AlN grown by Metal-Organic Vapor Phase Epitaxy2016

    • Author(s)
      M. Imura, Y. Ota, R. G. Banal, Y. Koide
    • Organizer
      International workshop on UV materials and devices (IWUMD-2016)
    • Place of Presentation
      Peking University, Beijing, China
    • Year and Date
      2016-07-27
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] Microstructure and Hole Accumulation Mechanism of AlN/Diamond(111) Het erojunctions Prepared by MOVPE2016

    • Author(s)
      M. Imura, R. G. Banal, M. Y. Liao, J. W. Liu, Y. Koide, T. Matsumoto, N. Shibata, Y. Ikuhara
    • Organizer
      International Conference on Diamond and Carbon Materials 2016 (ICDCM2016)
    • Place of Presentation
      Le Corum, Montpellier, France
    • Year and Date
      2016-09-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] Microstructure and hole accumulation mechanism of AlN/Diamond(111) heterojunctions prepared by MOVPE2016

    • Author(s)
      M. Imura, R.G. Banal, M.Y. Liao, J. Liu, Y.Koide , T. Matsumoto, N. Shibata, Y. Ikuhara
    • Organizer
      10th International International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
    • Place of Presentation
      Xi'an, China
    • Year and Date
      2016-09-04
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06419
  • [Presentation] MOVPE法により成長させたボロンドープAlNの構造評価2016

    • Author(s)
      井村将隆, 太田優一, R. G. Banal, 小出康夫
    • Organizer
      第35回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2016-07-06
    • Data Source
      KAKENHI-PROJECT-16K06330
  • [Presentation] Sputter deposition AlN and atomic layer deposition Al2O3 as bilayer gate materials for Hterminated diamond field effect transistors2016

    • Author(s)
      R.G. Banal, M. Imura, J. Liu, M. Liao, and Y.Koide
    • Organizer
      International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
    • Place of Presentation
      Montpelier, France
    • Year and Date
      2016-09-04
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06419
  • [Presentation] Sputter deposition AlN and atomic layer deposition Al2O3 as bilayer gate materials for Hterminated diamond field effect transistors2016

    • Author(s)
      R.G. Banal, M. Imura, J. Liu, M. Liao, and Y.Koide
    • Organizer
      International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
    • Place of Presentation
      Montpelier, France
    • Year and Date
      2016-09-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249054
  • [Presentation] Microstructure and hole accumulation mechanism of AlN/Diamond(111) heterojunctions prepared by MOVPE,2016

    • Author(s)
      M. Imura, R.G. Banal, M.Y. Liao, J. Liu, Y.Koide , T. Matsumoto, N. Shibata, Y. Ikuhara
    • Organizer
      International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
    • Place of Presentation
      Montpelier, France
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25249054
  • [Presentation] ALD-Al2O3/SD-AlN as Bilayer Gate Material for Diamond FET2015

    • Author(s)
      R.G.Banal、井村将隆、劉江偉、小出康夫
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Effect of Boron incorporation on the structural quality of AlBN layer s grown by MOVPE2015

    • Author(s)
      M. Imura, Y. Ota, R. G. Banal, and Y. Koide
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides(ISGN-6)
    • Place of Presentation
      Act City, Hamamatsu, Japan
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Low-temperature AlN Buffer Layer Technique to Eliminate the Small-angle Grain Boundary in AlN Grown on Sapphire Substrate2015

    • Author(s)
      R. G. Banal, M. Imura, and Y. Koide
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides(ISGN-6)
    • Place of Presentation
      Act City, Hamamatsu, Japan
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] AlN/ダイヤモンド及びダイヤモンド/AlN/サファイア上のヘテロエピタキシャル成長2015

    • Author(s)
      井村将隆、R.G.Banal、劉江偉、廖梅勇、小出康夫
    • Organizer
      第29回ダイヤモンドシンポジウム
    • Place of Presentation
      東京理科大学葛飾キャンパス
    • Year and Date
      2015-11-17
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] 半導体の基礎II:窒化物半導体を用いた光・電子デバイス2015

    • Author(s)
      井村将隆
    • Organizer
      ソディック-未踏科学技術協会 企業内セミナー(招待講演)
    • Place of Presentation
      ソディック株式会社
    • Year and Date
      2015-11-24
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Control of normally-on/off in hydrogenated-diamond MISFET2015

    • Author(s)
      劉江偉、廖梅勇、井村将隆、小出康夫
    • Organizer
      第29回ダイヤモンドシンポジウム
    • Place of Presentation
      東京理科大学葛飾キャンパス
    • Year and Date
      2015-11-17
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] ZrO2 on hydrogenated-diamond: breakdown electric field interfacial band configuration and gate-drain distance scaling effect for electrical property of MISFET2015

    • Author(s)
      劉江偉、M.Y.Liao、井村将隆、小出康夫
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Impedance Spectroscopy of Diamond MOS Structure2015

    • Author(s)
      . Y. Liao, J. W. Liu, S. Liwen, D. Coatchup, J. L. Li, M. Imura, H. Ye, and Y. Koide
    • Organizer
      9th International Conference on New Diamond and Nano Carbons (NDNC2015)
    • Place of Presentation
      Shizuoka Granship, Shizuoka, Japan
    • Year and Date
      2015-05-24
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Hydrogenated-diamond MISFET logic inverter2015

    • Author(s)
      J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      9th International Conference on New Diamond and Nano Carbons (NDNC2015)
    • Place of Presentation
      Shizuoka Granship, Shizuoka, Japan
    • Year and Date
      2015-05-24
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Hole channel formation mechanism in AlN/diamond heterojunction and high-k oxide gate diamond FETs2015

    • Author(s)
      Y. Koide, M. Imura, J. W. Liu, M. Y. Liao, R. G. Banal, T. Matsumoto, N. Shibata, and Y. Ikuhara
    • Organizer
      26th International Conference on Diamond and Carbon Materials (ICDCM2015)
    • Place of Presentation
      Bad Homburg, Germany
    • Year and Date
      2015-09-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Normally-off HfO2/diamond field effect transistors fabrication2014

    • Author(s)
      劉江偉、M.Y.Liao、井村将隆、小出康夫
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] MOVPE法による(111)面ダイヤモンド基板上のAlNの高品質化2014

    • Author(s)
      井村将隆、劉江偉、廖梅勇、小出康夫
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Al2O3 および HfO2/水素終端ダイヤモンド界面の周波数分散特性2014

    • Author(s)
      小出康夫、劉江偉、M.Y.Liao、井村将隆、大里啓孝、渡辺英一郎、津谷大樹
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Band Configuration of HfO2/hydrogen-terminated Diamond Heterojunction Correlated with Electrical Properties of Metal/HfO2/hydrogen-terminated Diamond Diodes2013

    • Author(s)
      J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      New Diamond and Nano carbon conference (NDNC2013)
    • Place of Presentation
      National University, Singapore.
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Atomic Layer Deposition Technique for Diamond-based Field Effect Transistors2013

    • Author(s)
      M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
    • Organizer
      NIMS Confrence 2013
    • Place of Presentation
      Epochal Tsukuba, Japan.
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Interfacial Electronic Band Alignment of Ta2O5/hydrogen-terminated Diamond Heterojunction Determined by X-ray Photoelectron Spectroscopy2013

    • Author(s)
      J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      New Diamond and Nano carbon conference (NDNC2013)
    • Place of Presentation
      National University, Singapore
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] AlN/ダイヤモンドヘテロ接合FETとMEMSスイッチ2013

    • Author(s)
      小出康夫、廖梅勇、井村将隆
    • Organizer
      応用物理学会応用電子物性分科会研究例会
    • Place of Presentation
      金沢工業大学大学院虎ノ門キャンパス
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Band configuration of HfO2/hydrogen-terminated diamond heterointerface correlated with electrical properties of metal/HfO2/hydrogen-terminated diamond diodes2013

    • Author(s)
      J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      New Diamond and Nano Carbons Conference (NDNC 2013)
    • Place of Presentation
      Novotel Singapore Clarke Quay, Singapole
    • Data Source
      KAKENHI-PROJECT-25249054
  • [Presentation] nterfacial Electronic Band Alignment of Ta2O5/hydrogen-terminated Diamond Heterojunction Determined by X-ray Photoelectron Spectroscopy2013

    • Author(s)
      J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      New Diamond and Nano carbon conference (NDNC2013)
    • Place of Presentation
      National University, Singapore.
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Combination with Atomic Layer Deposition Technique for Fabrication of High-performance HfO2/diamond Metal-oxide-insulator Field Effect Transistors2013

    • Author(s)
      J. Liu, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      NIMS conference 2013
    • Place of Presentation
      Epochal Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] 原子層堆積法による水素終端ダイヤモンド上のAl2O3とHfO2の電子構造2013

    • Author(s)
      劉. 江偉、廖梅勇、井村将隆、小出康夫
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Diamond Field Effect Transistors using Al2O3 Insulator/Surface p-Channel Diamond Prepared by Thermal Treatment with Hydrogen and Ammonia Atmosphere2013

    • Author(s)
      M. Imura, H. Ohsato, E. Watanabe, D. Tsuya, J. Liu, M. Y. Liao, Y. Koide
    • Organizer
      International Conference on Diamond and Carbon Materials 2013 (ICDCM 2013)
    • Place of Presentation
      Riva del Garda, Italy
    • Data Source
      KAKENHI-PROJECT-25249054
  • [Presentation] 次世代パワーデバイス用ダイヤモンド電界効果トランジスタ2013

    • Author(s)
      井村将隆、小出康夫
    • Organizer
      Nano tech 2013
    • Place of Presentation
      つくば国際会議場
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] HfO2/Hydrogenated-diamond field effect transistors for power devices2013

    • Author(s)
      劉江偉、M.Y.Liao、井村将隆、小出康夫
    • Organizer
      第13回 NIMSフォーラム
    • Place of Presentation
      東京国際フォーラム
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] AlN/ダイヤモンドヘテロ接合を用いた電子デバイス2013

    • Author(s)
      井村将隆、廖梅勇、小出康夫
    • Organizer
      第43回結晶成長国内会議
    • Place of Presentation
      長野市生涯学習センター
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Interfacial electronic band alignment of Ta2O5/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy2013

    • Author(s)
      J. W. Liu, S. H. Cheng, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      New Diamond and Nano Carbons Conference (NDNC 2013)
    • Place of Presentation
      Novotel Singapore Clarke Quay, Singapole
    • Data Source
      KAKENHI-PROJECT-25249054
  • [Presentation] 次世代パワーデバイス用ダイヤモンド電界効果トランジスタ2013

    • Author(s)
      井村将隆、小出康夫
    • Organizer
      つくばテクノロジー・ショーケース2013
    • Place of Presentation
      つくば国際会議場
    • Year and Date
      2013-01-22
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] 原子層堆積法による水素終端ダイヤモンド上のAl2O3とHfO2の電子構造2013

    • Author(s)
      劉. 江偉、廖梅勇、井村将隆、小出康夫
    • Organizer
      第 60 回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] HfO2/diamond電界効果トランジスタの作成2013

    • Author(s)
      劉江偉、M.Y.Liao、井村将隆、小出康夫
    • Organizer
      第27回ダイヤモンドシンポジウム
    • Place of Presentation
      日本工業大学
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Diamond field effect transistors using Al2O3 insulator / surface p-channel diamond prepared by thermal treatment with hydrogen and ammonia atmosphere2013

    • Author(s)
      M. Imura, H. Ohsato, E. Watanabe, D. Tsuya, J. W. Liu, M. Y. Liao, and Y. Koide
    • Organizer
      International Conference on Diamond and Carbon Materials 2013 (ICDCM2013)
    • Place of Presentation
      Riva del Garda-Fierecongressi S.p.A.,Riva del Garda,Italy.
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Band Configuration of HfO2/hydrogen-terminated Diamond Heterojunction Correlated with Electrical Properties of Metal/HfO2/hydrogen-terminated Diamond Diodes2013

    • Author(s)
      J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      New Diamond and Nano carbon conference (NDNC2013)
    • Place of Presentation
      National University, Singapore
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Fabrication of HfO2/hydrogenated diamond metal-oxide-semiconductor field effect transistors2013

    • Author(s)
      J. Liu, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      International Conference on Diamond and Carbon Materials 2013 (ICDCM2013)
    • Place of Presentation
      Riva del Garda-Fierecongressi S.p.A.,Riva del Garda,Italy.
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] 高濃度キャリアの電界制御を目指した強誘電体薄膜/ダイヤモンド接合2012

    • Author(s)
      小出康夫、G.C.Chen、廖梅勇、井村将隆
    • Organizer
      第72回応用応用物理学会学術講演会
    • Place of Presentation
      愛媛大学&松山大学
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Metal/insulator/p-diamond Structure with Large-permittivity Insulator for Gate Field Controlling2012

    • Author(s)
      Y. Koide, M. Y. Liao, M. Imura, and G. C. Chen
    • Organizer
      New Diamond and Nano Carbons 2012 (NDNC2012)
    • Place of Presentation
      Conrad San Juan Condado Plaza,San Juan,Puerto Rico
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] pチャネルAlN/Diamondヘテロ接合電界効果トランジスタ2012

    • Author(s)
      井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、MeiyongLiao、小出康夫、天野浩、松本翼、山崎聡
    • Organizer
      第31回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Al2O3/Diamond Field Effect Transistors using Surface p-Channel Prepared by Thermal Treatment with Hydrogen and Ammonia Atmosphere2012

    • Author(s)
      M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano:
    • Organizer
      IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
    • Place of Presentation
      Pacifico Yokohama, Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] High dielectric constant oxide on diamond for high power devices2012

    • Author(s)
      S. H. Cheng, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
    • Place of Presentation
      Pacifico Yokohama, Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] 次世代パワーデバイス用ダイヤモンド電界効果トランジスタ2012

    • Author(s)
      井村将隆、小出康夫
    • Organizer
      第12回NIMSフォーラム
    • Place of Presentation
      東京国際フォーラム
    • Year and Date
      2012-10-25
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Field Effect Transistors by AlN/Diamond Heterostructure - past & future -2012

    • Author(s)
      M.Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
    • Organizer
      Hasselt Diamond Workshop 2012 SBDD XVII
    • Place of Presentation
      The cultuurcentrum Hasselt ,Hasselt,Belgium
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] TEM-CBED法を用いたAlNの極性決定評価2012

    • Author(s)
      井村将隆、中島清美、小出康夫、天野浩、津田健治
    • Organizer
      第31回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Electrical Transport Mechanism of Field Effect Transistors by AlN/Diamond Heterostructure2012

    • Author(s)
      M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
    • Organizer
      International Conference on Diamond and Carbon Materials (Diamond2012)
    • Place of Presentation
      The Granada Congress and Exhibitions Centre, Granada, Spain
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] High-k insulator/p-diamond structure for gate voltage controlling / High-k insulator/p-diamond structure for gate voltage controlling2012

    • Author(s)
      Y. Koide, G. C. Chen, M. Y. Liao and M. Imura
    • Organizer
      International Conference on Diamond and Carbon Materials (Diamond2012)
    • Place of Presentation
      The Granada Congress and Exhibitions Centre, Granada, Spain
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Diamond-FET using AlN/diamond heterojunction2012

    • Author(s)
      M. Imura, M. Y. Liao, and Y. Koide
    • Organizer
      IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
    • Place of Presentation
      Pacifico Yokohama, Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Electrical property of high-k insulator/p-diamond diodes for electric field controlling2012

    • Author(s)
      Y. Koide, G. C. Chen, M. Y. Liao, and M. Imura
    • Organizer
      IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
    • Place of Presentation
      Pacifico Yokohama, Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] 原子層堆積法により成膜したアルミナゲート表面チャネルダイヤモンドFETの特性評価2012

    • Author(s)
      井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、MeiyongLiao、小出康夫、天野浩、松本翼、山崎聡
    • Organizer
      第26回ダイヤモンドシンポジウム
    • Place of Presentation
      青山学院大学青山キャンパス
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] High-k insulator/p-diamond structure for gate voltage controlling / High-k insulator/p-diamond structure for gate voltage controlling2012

    • Author(s)
      Y. Koide, G. C. Chen, M. Y. Liao, and M. Imura
    • Organizer
      International Conference on Diamond and Carbon Materials (Diamond2012)
    • Place of Presentation
      the Granada Congress and Exhibitions Centre, Granada, Spain
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] 高濃度キャリアの電界制御を目指した強誘電体薄膜/ダイヤモンド接合2012

    • Author(s)
      小出康夫、G.C.Chen、廖梅勇、井村将隆
    • Organizer
      第72回応用応用物理学会学術講演会
    • Place of Presentation
      愛媛大学&松山大学
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Electrical Transport Mechanism of Field Effect Transistors by AlN/Diamond Heterostructure2012

    • Author(s)
      M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
    • Organizer
      International Conference on Diamond and Carbon Materials (Diamond2012)
    • Place of Presentation
      the Granada Congress and Exhibitions Centre, Granada, Spain
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Field Effect Transistors by AlN/Diamond Heterostructure - past & future -.2012

    • Author(s)
      M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
    • Organizer
      Hasselt Diamond Workshop 2012 SBDD XVII(招待講演)
    • Place of Presentation
      The cultuurcentrum Hasselt ,Hasselt,Belgium
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Polarity determination of AlN by convergent beam electron diffraction method based on transmission electron microscopy2012

    • Author(s)
      M. Imura, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda
    • Organizer
      International Workshop on Nitride Semiconductors 2012 (IWN 2012)
    • Place of Presentation
      Sapporo Convention Center,Sapporo,Japan
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Development of Diamond Field Effect Transistors by AlN / Diamond Heterostructure2011

    • Author(s)
      M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
    • Organizer
      22nd European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes and Nitrides (Diamond2011)
    • Place of Presentation
      Garmisch - Partenkirchen,Bavaria,German
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Demonstration of AlN/Diamond Heterostructure Field Effect Transistors2011

    • Author(s)
      M. Imura, R. Hayakawa, H. Oosato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
    • Organizer
      MANA International Symposium 2011 (MANA Sympo. 2011)
    • Place of Presentation
      Epochal Tsukuba, Tsukuba, Japan
    • Year and Date
      2011-03-03
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011

    • Author(s)
      M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
    • Organizer
      International Conference on New Diamond and Nano Carbons 2011 (NDNC2011)
    • Place of Presentation
      Kunibiki Messe, Matsue, Japan
    • Year and Date
      2011-05-19
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Development of Diamond Field Effect Transistors by AlN / Diamond Heterostructure2011

    • Author(s)
      M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
    • Organizer
      22nd European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes and Nitrides(Diamond2011)
    • Place of Presentation
      Garmisch - Partenkirchen,Bavaria,German
    • Year and Date
      2011-09-07
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Demonstration of AlN/Diamond Heterostructure Field Effect Transistors2011

    • Author(s)
      M.Imura, R.Hayakawa, H.Oosato, E.Watanabe, D.Tsuya, M.Y.Liao, Y.Koide, H.Amano
    • Organizer
      MANA International Symposium 2011
    • Place of Presentation
      Epochal Tsukuba, Japan
    • Year and Date
      2011-03-03
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] AlN/ダイヤモンドヘテロ構造トランジスタ2011

    • Author(s)
      井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-26
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] AlN/Diamondヘテロ接合型ダイヤモンド電界効果トランジスタ2011

    • Author(s)
      井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
    • Organizer
      第72回応用応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011

    • Author(s)
      M.Imura, R.Hayakawa, H.Oosato, E.Watanabe, D.Tsuya, M.Y.Liao, Y.Koide, H.Amanol.
    • Organizer
      International Conference on New Diamond and Nano Carbons 2011 (NDNC2011)
    • Place of Presentation
      Kunibiki Nesse, Matsue, Japan.
    • Year and Date
      2011-05-19
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] AlN/Diamondヘテロ接合型電界効果トランジスタの開発2011

    • Author(s)
      井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
    • Organizer
      日本金属学会2011年秋
    • Place of Presentation
      沖縄コンベンセンションセンター
    • Year and Date
      2011-11-06
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] AlN/Diamondヘテロ接合型ダイヤモンド電界効果トランジスタの開発2011

    • Author(s)
      井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
    • Organizer
      第25回ダイヤモンドシンポジウム
    • Place of Presentation
      産業技術総合研究所 共用講堂
    • Year and Date
      2011-12-07
    • Data Source
      KAKENHI-PROJECT-23760319
  • [Presentation] Demonstration of AlN/Diamond Heterostructure Field Effect Transistors2011

    • Author(s)
      M.Imura, R.Hayakawa, H.Oosato, E.Watanabe, D.Tsuya, M.Y.Liao, Y.Koide, H.Amanol.
    • Organizer
      MANA International Symposium 2011 (MANA Sympo.2011)
    • Place of Presentation
      Epochal Tsukuba, Tsukuba, Japan.
    • Year and Date
      2011-03-03
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] Microstructure of AlN layer on (001) and (111) diamond substrates by metal organic vapor phase epitaxy2010

    • Author(s)
      M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
    • Organizer
      MANA International Symposium 2010 (MANA Sympo.2010)
    • Place of Presentation
      Epochal Tsukuba, Tsukuba, Japan.
    • Year and Date
      2010-03-04
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] 様々な面のダイヤモンド基板上への窒化アルミニウム結晶成長2010

    • Author(s)
      井村将隆、中島清美、廖梅勇、小出康夫、天野浩
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学.
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] Microstructure of AlN layer on(001)and(111)diamond substrates by metal organic vapor phase epitaxy2010

    • Author(s)
      井村将隆, 中島清美, 廖梅勇, 小出康夫, 天野浩
    • Organizer
      MANA International Symposium 2010(MANA Sympo.2010)
    • Place of Presentation
      Epochal Tsukuba, Tsukuba, Japan
    • Year and Date
      2010-03-04
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] 様々な面のダイヤモンド基板上への窒化アルミニウム結晶成長2010

    • Author(s)
      井村将隆、中島清美、廖梅勇、小出康夫、天野浩
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] Growth of AlN on (001), (110), and (111) diamond substrates2010

    • Author(s)
      M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
    • Organizer
      The 4th International Conference on New Diamond and Nano Carbons
    • Place of Presentation
      Garden hotel, Suzhou, China
    • Year and Date
      2010-05-17
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] Growth of AlN on (001), (110), and (111) diamond substrates2010

    • Author(s)
      M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
    • Organizer
      The 4th International Conference on New Diamond and Nano Carbons (NDNC2010)
    • Place of Presentation
      the Garden hotel, Suzhou, China.
    • Year and Date
      2010-05-17
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] Growth of AlN on(001)diamond substrate by metal-organic vapor phase epitaxy2009

    • Author(s)
      井村将隆, 中島清美, 廖梅勇, 小出康夫, 天野浩
    • Organizer
      3rd International Conference on New Diamond and Nano Carbons(NDNC2009)
    • Place of Presentation
      Traverse City, Michigan, USA
    • Year and Date
      2009-06-09
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] Microstructure analysis for growth process of AlN layer on (001) and (111) diamond substrates by a metal-organic vapor phase epitaxy2009

    • Author(s)
      M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
    • Organizer
      The 17th American Conference on Crystal Growth and Epitaxy (ACCGE17)
    • Place of Presentation
      Lake Geneva, Wisconsin, USA.
    • Year and Date
      2009-08-12
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] Analysis of polar direction of AlN grown by metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy2009

    • Author(s)
      M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
    • Organizer
      The 36th International Symposium on Compound Semiconductors (ISCS2009)
    • Place of Presentation
      University of California, Santa Barbara, USA.
    • Year and Date
      2009-09-01
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] Microstructure analysis for growth process of AlN layer on(001)and(111)diamond substrates by a metal-organic vapor phase epitaxy2009

    • Author(s)
      井村将隆, 中島清美, 廖梅勇, 小出康夫, 天野浩
    • Organizer
      The 17th American Conference on Crystal Growth and Epitaxy(ACCGE17)
    • Place of Presentation
      Lake Geneva, Wisconsin, USA
    • Year and Date
      2009-08-12
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] MOVPE法による(001)面ダイヤモンド基板上の窒化アルミニウムの成長2009

    • Author(s)
      井村将隆、中島清美、廖梅勇、小出康夫、天野浩
    • Organizer
      第28回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖.
    • Year and Date
      2009-07-10
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] Analysis of polar direction of AlN grown by metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy2009

    • Author(s)
      M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
    • Organizer
      The 36th International Symposium on Compound Semiconductors(ISCS2009)
    • Place of Presentation
      University of California, Santa Barbara, USA
    • Year and Date
      2009-09-01
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] MOVPE法によるダイヤモンド基板上の窒化アルミニウムの成長2009

    • Author(s)
      井村将隆
    • Organizer
      2009年春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学,茨城県つくば市
    • Data Source
      KAKENHI-PROJECT-19656183
  • [Presentation] MOVPE法による(001)面ダイヤモンド基板上の窒化アルミニウムの成長2009

    • Author(s)
      井村将隆、中島清美、廖梅勇、小出康夫、天野浩
    • Organizer
      第28回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2009-07-10
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] Growth of AlN on (001) diamond substrate by metal-organic vapor phase epitaxy2009

    • Author(s)
      M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
    • Organizer
      The 3rd International Conference on New Diamond and Nano Carbons (NDNC2009)
    • Place of Presentation
      Traverse City, Michigan, USA.
    • Year and Date
      2009-06-09
    • Data Source
      KAKENHI-PROJECT-21760268
  • [Presentation] ダイヤモンド基板によるショットキーフォトダイオード特性への影響2008

    • Author(s)
      井村将隆
    • Organizer
      第22回 ダイヤモンドシンポジウム
    • Place of Presentation
      早稲田大学 大久保キャンパス,東京都
    • Data Source
      KAKENHI-PROJECT-18360341
  • [Presentation] Vertical-type Schottky-Barrier Photodiode using p- / p+-Diamond Substrates2008

    • Author(s)
      井村将隆
    • Organizer
      2nd International Conference on New Diamond and Nano Carbons
    • Place of Presentation
      Grand Hotel, Taipei, Taiwan
    • Data Source
      KAKENHI-PROJECT-18360341
  • [Presentation] Devices design in solar-blind diamond photodetectors2008

    • Author(s)
      M. Y. Liao, J. Alvarez, M. Imura, and Y. Koide
    • Organizer
      New Diamond and Nano Carbons (NDNC2008)
    • Place of Presentation
      Taipei, Taiwan(Outstanding Poster Award)
    • Data Source
      KAKENHI-PROJECT-18360341
  • [Presentation] Development of flame sensor using diamond visible-blind ultraviolet photo- diode2008

    • Author(s)
      Y. Koide, M. Y. Liao, J. Alvarez, M. Imura, K. Sueishi, and F. Yoshifusa
    • Organizer
      New Diamond and Nano Carbons (NDNC2008)
    • Place of Presentation
      Taipei, Taiwan
    • Data Source
      KAKENHI-PROJECT-18360341
  • [Presentation] Diamond deep-UV photo- detector with high sensitivity and thermal stability2008

    • Author(s)
      Y. Koide, M. Y. Liao, M. Imura, and J. Alvarez
    • Organizer
      The 19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, (Diamond 2008), Abst. 13.1
    • Place of Presentation
      Sitges, Spain
    • Data Source
      KAKENHI-PROJECT-18360341
  • [Presentation] Schottky-barrier photodiode using p-diamond epilayer grown on p+-diamond substrates2008

    • Author(s)
      井村将隆
    • Organizer
      EMS27
    • Place of Presentation
      ラフォーレ修善寺,静岡県伊豆市
    • Data Source
      KAKENHI-PROJECT-18360341
  • [Presentation] Vertical-type Schottcky-Barrie Photodiode using p-Diamond Epilayer Grown on Heavily Boron-doped p+-Diamond Substrate2008

    • Author(s)
      M. Imura, Y. Koide, M. Y. Liao, and J. Alvarez
    • Organizer
      New Diamond and Nano Carbons (NDNC2008)
    • Place of Presentation
      Taipei, Taiwan
    • Data Source
      KAKENHI-PROJECT-18360341
  • [Presentation] 導電性p+-ダイヤモンド基板を用いたショットキーフォトダイオード2008

    • Author(s)
      井村将隆
    • Organizer
      2008年秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学,愛知県春日井市
    • Data Source
      KAKENHI-PROJECT-18360341
  • [Presentation] Fabrication of low on-resistance diamond field effect transistors

    • Author(s)
      J. Liu, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      New Diamond and Nano Carbons Conference (NDNC 2014)
    • Place of Presentation
      Hyatt Regency Chicago, Chicago, Illinois, USA,
    • Year and Date
      2014-05-25 – 2014-05-29
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] ウェットアニールダイヤモンド(111)上 ALD-Al2O3 膜を用いたMOS キャパシタ の電気的特性

    • Author(s)
      上田諒浩、宮田大輔、徳田規夫、井村将隆、小出康夫、小倉政彦、山崎聡、猪熊孝夫
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス.
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Frequency dispersion properties at Al2O3 and HfO2/H-terminated diamond interfaces

    • Author(s)
      Y. Koide, J. Liu, M. Y. Liao, M. Imura, H. Oosato, and E. Watanabe
    • Organizer
      New Diamond and Nano Carbons Conference (NDNC 2014)
    • Place of Presentation
      Hyatt Regency Chicago, Chicago, Illinois, USA,
    • Year and Date
      2014-05-25 – 2014-05-29
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] High-k/hydrogenated-diamond metal-insulator-semiconductor field effect transistors fabrication

    • Author(s)
      J. Liu, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      International Conference on Diamond and Carbon Materials (ICDCM2014)
    • Place of Presentation
      Melia Castilla, Madrid, Spain.
    • Year and Date
      2014-09-07 – 2014-09-11
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Hydrogenated-diamond logic inverter fabrication with enhancement-mode metal-insulator-semiconductor field effect transistor

    • Author(s)
      劉江偉、M.Y.Liao、井村将隆、小出康夫
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス.
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] AlN/ (111)面ダイヤモンドヘテロ接合界面の微細構造観察と電気的特性評価

    • Author(s)
      井村将隆、劉江偉、廖梅勇、小出康夫、松元隆夫、柴田直哉、幾原雄一
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス.
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond

    • Author(s)
      J. Liu, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      New Diamond and Nano Carbons Conference (NDNC 2014)
    • Place of Presentation
      Hyatt Regency Chicago, Chicago, Illinois, USA,
    • Year and Date
      2014-05-25 – 2014-05-29
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Energy-Band Offset of AlN/Diamond(111) Heterojunction Determined by X- ray Photoelectron Spectroscopy

    • Author(s)
      M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
    • Organizer
      International Conference on Solid State Devices and Materials 2014 (SSDM2014)
    • Place of Presentation
      Epochal Tsukuba, Tsukuba, Japan.
    • Year and Date
      2014-09-08 – 2014-09-11
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Recent progress of field effect transistors by AlN/Diamond Heterostructure

    • Author(s)
      M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
    • Organizer
      The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014)
    • Place of Presentation
      Fukuoka University, Fukuoka, Japan.
    • Year and Date
      2014-08-24 – 2014-08-30
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] 窒化物半導体の界面制御とナノラミネート特異構造を用いた電子デバイスの開発

    • Author(s)
      小出康夫、井村将隆、劉江偉、M.Y.Liao
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス.
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] X線光電子分光法によるAlN/(111)ダイヤモンドヘテロ接合のエネルギーバンド オフセット評価

    • Author(s)
      井村将隆、田中彰博、岩井秀夫、劉江偉、廖梅勇、小出康夫
    • Organizer
      第33回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2014-07-07 – 2014-07-09
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Atomically controlled diamond surfaces and interfaces

    • Author(s)
      N. Tokuda, D. Miyata, A. Ueda, T. Chonan, T. Minamiyama, T. Inokuma, M. Imura, Y. Koide, M. Ogura, T. Makino, D. Takeuchi, and S. Yamsaki
    • Organizer
      25th International Conference on Diamond and Carbon Materials
    • Place of Presentation
      Melia Castilla, Madrid, Spain., (2014),
    • Year and Date
      2014-09-07 – 2014-09-11
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] HfO2 on hydrogenated-diamond for field effect transistors

    • Author(s)
      J. Liu, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014)
    • Place of Presentation
      Fukuoka University, Fukuoka, Japan.
    • Year and Date
      2014-08-24 – 2014-08-30
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Atomic layer deposited Al2O3/diamond field effect transistors using surface p-channel prepared by thermal treatment with H2+NH3 gases

    • Author(s)
      M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
    • Organizer
      14th International Conference on Atomic Layer Deposition (ALD2014)
    • Place of Presentation
      Hotel Granvia Kyoto, Kyoto, Japan.
    • Year and Date
      2014-06-15 – 2014-06-18
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] “Diamond metal-insulator-semiconductor field effect transistor logic inverters

    • Author(s)
      J. Liu, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      International Symposium on Single Crystal Diamond Electronics and the Fourth Chinese Vacuum Forum (SCDE 2014)
    • Place of Presentation
      Xian China high-speed Le Grand Large Hotel, Xian, China.
    • Year and Date
      2014-06-12 – 2014-06-17
    • Data Source
      KAKENHI-PROJECT-25420349
  • [Presentation] Atomic Layer Deposited HfO2/Al2O3 Multi-nano-layer on Diamond for Field Effect Transistor

    • Author(s)
      J. Liu, M. Y. Liao, M. Imura, and Y. Koide
    • Organizer
      The 4th Annual World Congress of Nano-S&T
    • Place of Presentation
      Qingdao, Qingdao, China.
    • Year and Date
      2014-10-29 – 2014-10-30
    • Data Source
      KAKENHI-PROJECT-25420349
  • 1.  KOIDE Yasuo (70195650)
    # of Collaborated Projects: 8 results
    # of Collaborated Products: 175 results
  • 2.  廖 梅勇 (70528950)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 39 results
  • 3.  AMANO Hiroshi (60202694)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 23 results
  • 4.  劉 江偉 (30732119)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 20 results
  • 5.  MEIYONG Liao (00425555)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 6.  TSUYA DAIJU (10469760)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 7.  Oshima Takayoshi (60583151)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 8.  TAKAHASHI Kazutoshi (30332183)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  ALVAREZ Jose
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 9 results
  • 10.  KATO Yuji
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 11.  NANISHI Yasushi
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 2 results
  • 12.  YAMAGUCHI Tomohiro
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 3 results
  • 13.  SUDA Jun
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 3 results
  • 14.  UCHIHASHI Takashi
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 15.  TOKUDA Norio
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 16.  荒木 努
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 2 results
  • 17.  柴田 直哉
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 18.  幾原 雄一
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 19.  SANG Liwen
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 2 results
  • 20.  山口 明
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 21.  山口 尚秀
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 22.  蔭浦 泰資
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 23.  加藤 宙光
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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