imura masataka 井村将隆

… Alternative Names

Researcher Number	80465971
Other IDs
Affiliation (Current)	2021: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主任研究員
Affiliation (based on the past Project Information) *help	2016 – 2021: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主任研究員 2017: 国立研究開発法人物質・材料研究機構, 機能性材料拠点, 主任研究員 2017: 物質材料研究機構, 主任研究員 2015 – 2016: 国立研究開発法人物質・材料研究機構, 光・電子材料ユニットワイドバンドギャップ機能材料グループ, 主任研究員 2015: 国立研究開発法人物質・材料研究機構, 環境エネルギー材料部門, 主任研究員 … More
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Structural/Functional materials / Electron device/Electronic equipment / Science and Engineering / Crystal engineering / Medium-sized Section 26:Materials engineering and related fields
Keywords	Principal Investigator ダイヤモンド / 窒化アルミニウム / 電界効果トランジスタ / 電子デバイス・電子機器 / 電子デバイス / ヘテロ接合 / 高周波パワーデバイス / 窒化物半導体 / 原子層体積成長法 / ノーマリオフ型 … More Except Principal Investigator ダイヤモンド / ヘテロ接合 / 窒化アルミニウム / 電界効果トランジスタ / ＩＩＩ族窒化物 / III族窒化物 / ナノラミネート構造 / トランジスタ / 深紫外線 / ショットキー型 / MSM型 / 永続的光伝導 / 光応答 / フォトディテクター / 利得 / ヘテロ接 / MOVPE / バンド不連 / p型ドーパント / バンド不連続 / 酸化物 / 酸化物界面 / 微細構造解析 / ２次元正孔伝導 / 水素終端表面 / 論理回路 / ゲート酸化膜 / 強誘電体 / ノーマリオフ動作 / 分極 / 酸化物ゲート / 窒化物ゲート / 高誘電ゲート / 異種接合 / 誘電体 / ゲート絶縁膜 / 誘電率 / 原子層堆積法 / ナノラミネート薄膜 / II族窒化物 / 酸化ガリウム / 混晶 / 超格子 / 酸化アルミニウムガリウム / 超ワイドギャップ半導体 / 結晶成長 / 半導体物性 / ワイドギャップ半導体 / ヘテロ構造 Less

Develop a carrier control method for diamond using heterojunction doping technique
- Principal Investigator
  
  小出康夫
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 26:Materials engineering and related fields
- Research Institution
  National Institute for Materials Science
AlN／ダイヤモンドpin接合を用いたダイヤモンド電子デバイスの高性能化Principal Investigator
- Principal Investigator
  
  井村将隆
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute for Materials Science
Development of diamond electron device using III-nitride nanolaminate singularity structure
- Principal Investigator
  
  小出康夫
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  National Institute for Materials Science
Investigation of Ferroelectric Property Based on Nitride/Oxide Stack Structure and Its Application for Diamond FETPrincipal Investigator
- Principal Investigator
  
  Imura Masataka
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute for Materials Science
Fabrication of an ultra-wide-band-gap semiconductor having a 7-eV band gap
- Principal Investigator
  
  Oshima Takayoshi
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Saga University
Development of new diamond electron device using huge polarization charge
- Principal Investigator
  
  Koide Yasuo
- Project Period (FY)
  2013 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute for Materials Science
Energy Saving Normally-off p-Channel Diamond FET with High-Current OperationPrincipal Investigator
- Principal Investigator
  
  Imura Masataka
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute for Materials Science
Development of AlN/Diamond Heterojunction Field Effect TransistorPrincipal Investigator
- Principal Investigator
  
  IMURA Masataka
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute for Materials Science
Realization of ultra violet environment devices by using diamond and AlN hybrid structurePrincipal Investigator
- Principal Investigator
  
  IMURA Masataka
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute for Materials Science
ワイドギャップ半導体ヘテロ接合における電荷移送ドーピング法の開発
- Principal Investigator
  
  小出康夫
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Structural/Functional materials
- Research Institution
  National Institute for Materials Science
Preparation of guideline for sensing deep ultra-violet light using metal/diamond interfaces
- Principal Investigator
  
  KOIDE Yasuo
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Structural/Functional materials
- Research Institution
  National Institute for Materials Science

[Book] Study of Grain Boundary Character, Chapter 32017
- Author(s)
  Banal Ryan G.、Imura Masataka、Koide Yasuo
- Total Pages
  15
- Publisher
  IntechOpen
- ISBN
  9789535128625
- Data Source
  KAKENHI-PLANNED-16H06419
[Book] Study of Grain Boundary Character, Chapter 32016
- Author(s)
  Ryan G. Banal, Masataka Imura and Yasuo Koide
- Publisher
  INTECH
- Data Source
  KAKENHI-PROJECT-25249054
[Book] Study of Grain Boundary Character, Chapter 32016
- Author(s)
  Ryan G. Banal, Masataka Imura and Yasuo Koide
- Publisher
  INTECH open science/open minds
- Data Source
  KAKENHI-PLANNED-16H06419
[Journal Article] Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates2019
- Author(s)
  Y. Kato, M. Imura, Y. Nakayama, M. Takeguchi, and T. Oshima
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 6 Pages: 065503-065503
- DOI
  10.7567/1882-0786/ab2196
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04501
[Journal Article] Energy‐Efficient Metal?Insulator?Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases2019
- Author(s)
  Liao Meiyong、Sang Liwen、Shimaoka Takehiro、Imura Masataka、Koizumi Satoshi、Koide Yasuo
- Journal Title
  
  Advanced Electronic Materials
  
  Volume: 1 Pages: 1800832-1800832
- DOI
  10.1002/aelm.201800832
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K14141, KAKENHI-PROJECT-15H03999, KAKENHI-PROJECT-19K04501
[Journal Article] Surface and bulk electronic structures of unintentionally and Mg-dopedIn0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy2018
- Author(s)
  M. Imura, S. Tsuda, H. Takeda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 123 Pages: 095701-1
- DOI
  10.1063/1.5016574
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03559, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K06330
[Journal Article] Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal-Organic Vapor Phase Epitaxy2018
- Author(s)
  M. Imura, Y. Ota, R.G. Banal, M. Liao, Y. Nakayama, M. Takeguchi, and Y. Koide
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 215 Pages: 1800282-8
- DOI
  10.1002/pssa.201800282
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Journal Article] A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO 2/diamond interface2018
- Author(s)
  Kongping Wu, Meiyong Liao, Liwen Sang, Jiangwei Liu, Masataka Imura, Haitao Ye, Yasuo Koide
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 123 Pages: 161599-1
- DOI
  10.1063/1.5002176
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13806, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-15H03999, KAKENHI-PROJECT-16K06330
[Journal Article] Annealing effects on hydrogenated diamond NOR logic circuits2018
- Author(s)
  Jiangwei Liu, Hirotaka, Oosato, Meiyong Liao, Masataka Imura, Eiichiro Watanabe, Yasuo Koide
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 112 Pages: 153501-153501
- DOI
  10.1063/1.5022590
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13806, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K06330
[Journal Article] Development of AlN/Diamond heterostructure formation and unique interface property2018
- Author(s)
  井村将隆，バナルライアン，廖梅勇，松本隆夫，熊本明仁，柴田直哉，幾原雄一，小出康夫
- Journal Title
  
  JJACG
  
  Volume: 45 Issue: 1 Pages: 1-9
- DOI
  10.19009/jjacg.3-45-1-05
- NAID
  130006727551
- ISSN
  0385-6275, 2187-8366
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06419
[Journal Article] α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire2018
- Author(s)
  Takayoshi Oshima, Yuji Kato, Masataka Imura, Yoshiko Nakayama, Masaki Takeguchi
- Journal Title
  
  Applied Physics Express
  
  Volume: 印刷中
- NAID
  210000136256
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K13673
[Journal Article] Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer2018
- Author(s)
  T. Matsumoto, H. Kato, T. Makino, M. Ogura, D. Takeuchi, S. Yamasaki, M. Imura, A. Ueda, T. Inokuma, and N. Tokuda
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57 Issue: 4S Pages: 04FR01-04FR01
- DOI
  10.7567/jjap.57.04fr01
- NAID
  210000149007
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330, KAKENHI-PROJECT-17H02786
[Journal Article] Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters2017
- Author(s)
  J.W. Liu, M.Y. Liao, M. Imura, R.G. Banal, and Y. Koide
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS
  
  Volume: 121 Pages: 224502-11
- DOI
  10.1063/1.4985066
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K18096
[Journal Article] Logic circuits with hydrogenated diamond field-effect transistors2017
- Author(s)
  J. Liu, H. Ohsato, M. Liao, M. Imura, E. Watanabe, and Y. Koide
- Journal Title
  
  IEEE ELECTRON DEVICE LETTERS
  
  Volume: 38 Pages: 922-925
- DOI
  10.1109/led.2017.2702744
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K18096
[Journal Article] Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al2O3 Stack Gate2017
- Author(s)
  R.G. Banal, M. Imura, H. Ohata, M. Liao, J. Liu, and Y. Koide
- Journal Title
  
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
  
  Volume: 214 Pages: 1700463-1700463
- DOI
  10.1002/pssa.201700463
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330, KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-16K18096
[Journal Article] Nanometer-thin ALD-Al2O3 for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE2017
- Author(s)
  Ryan G. Banal, Masataka Imura,1, Daiju Tsuya, Hideo Iwai, and Yasuo Koide
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 217 Pages: 1600727-1600727
- DOI
  10.1002/pssa.201600727
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-16K06330
[Journal Article] Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy2017
- Author(s)
  M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 121 Pages: 095703-095703
- DOI
  10.1063/1.4977201
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03559, KAKENHI-PROJECT-26600090, KAKENHI-PROJECT-16K06330, KAKENHI-PLANNED-16H06419
[Journal Article] Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel,2017
- Author(s)
  Masataka Imura, Ryan G. Banal, Meiyong Liao, Jiangwei Liu, Takashi Aizawa, Akihiro Tanaka, Hideo Iwai, Takaaki Mano, and Yasuo Koide
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS
  
  Volume: 121 Pages: 025702-025702
- DOI
  10.1063/1.4972979
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-15H03999, KAKENHI-PROJECT-16K06330, KAKENHI-PROJECT-16K18096
[Journal Article] Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors2016
- Author(s)
  Ryan G. Banal, Masataka Imura, Jiangwei Liu, and Yasuo Koide,
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 120 Pages: 115307-115307
- DOI
  10.1063/1.4962854
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-16K06330, KAKENHI-PROJECT-16K18096
[Journal Article] High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors,2016
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, and Y.Koide
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 120 Pages: 124504-124504
- DOI
  10.1063/1.4962851
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419, KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-16K06330, KAKENHI-PROJECT-16K18096
[Journal Article] Formation Mechanism and Elimination of Small‐Angle Formation Mechanism and Elimination of Small‐Angle Grain Boundary in AlN Grown on (0001) Sapphire Substrate2016
- Author(s)
  R.G. Banal, M. Imura, Y. Koide
- Journal Title
  
  INTECH
  
  Volume: Chapter3 Pages: 43-58
- DOI
  10.5772/66177
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Journal Article] Influence of surface structure of (0001) sapphire substrate on the elimination of small-angle grain boundary in AlN epilayer2015
- Author(s)
  R. G. Banal, M. Imura, and Y. Koide
- Journal Title
  
  Aip Advances
  
  Volume: 5 Pages: 0971431-8
- DOI
  10.1063/1.4931159
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349
[Journal Article] Control of normally-on/off in hydrogenated-diamond metal-insulator-semiconductor filed effect transistor2015
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, T. Matsumoto, N. Shibata, Y. Ikuhara, and Y. Koide
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 118 Pages: 115704-115704
- DOI
  10.1063/1.4930294
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349, KAKENHI-PROJECT-26289234, KAKENHI-PLANNED-25106003, KAKENHI-PROJECT-25249054
[Journal Article] Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures2015
- Author(s)
  M.Y. Liao, J.W. Liu, L. W. Sang. D. Coatchup, J. L. Li, M. Imura, Y. Koide, H. Ye
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 106 Pages: 083506-083506
- DOI
  10.1063/1.4913597
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03999, KAKENHI-PROJECT-25420349, KAKENHI-PROJECT-25249054
[Journal Article] Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond2015
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide
- Journal Title
  
  Dia. Relat. Mater.
  
  Volume: 54 Pages: 5558-5558
- DOI
  10.1016/j.diamond.2014.10.004
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349, KAKENHI-PROJECT-25249054
[Journal Article] Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material2014
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, and Y. Koide
- Journal Title
  
  Journal of Physics D
  
  Volume: 47 Pages: 245102-15
- DOI
  10.1088/0022-3727/47/24/245102
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420349
[Journal Article] Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor2014
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, and Y. Koide
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 105 Pages: 082110-1
- DOI
  10.1063/1.4894291
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25420349, KAKENHI-PROJECT-25249054
[Journal Article] Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric2014
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, A. Tanaka, H. Iwai, and Y. Koide
- Journal Title
  
  Sci. Reports
  
  Volume: 4 Pages: 6395-1
- DOI
  10.1038/srep06395
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25420349, KAKENHI-PROJECT-25249054
[Journal Article] Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material2014
- Author(s)
  J. Liu, L. Meiyong, M. Imura, E. Watanabe, H. Oosato, Y. Koide
- Journal Title
  
  J. Phys. D: Appl. Phys.
  
  Volume: 47 Pages: 245102-1
- DOI
  10.1016/j.diamond.2013.06.005
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25249054
[Journal Article] Interfacial chemical bonding state and band alignment of CaF2/hydrogen-terminated diamond heterojunction2013
- Author(s)
  J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, and Y. Koide
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 113
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Normally-off HfO2-gated diamond field effect transistors2013
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Journal Title
  
  Applied Physics Letters
  
  Volume: 103 Pages: 929051-3
- DOI
  10.1063/1.4820143
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-25420349
[Journal Article] ＡｌＮ／ダイヤモンドヘテロ接合ＦＥＴとＭＥＭＳスイッチ2013
- Author(s)
  小出　康夫，廖　梅勇，井村　将隆
- Journal Title
  
  応用電子物性分科会誌
  
  Volume: 第19巻 Pages: 7-13
- Data Source
  KAKENHI-PROJECT-25249054
[Journal Article] Interfacial electronic band alignment of Ta2O5/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy2013
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 102 Pages: 24-27
- DOI
  10.1063/1.4798289
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319, KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-25420349
[Journal Article] Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors2013
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, and Y. Koide
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 114 Pages: 841081-7
- DOI
  10.1063/1.4819108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249054, KAKENHI-PROJECT-25420349
[Journal Article] Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <11-20> and <1-100> Zone-Axes of AlN for Polarity Determination2013
- Author(s)
  M. Imura, U. Gautam, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] ダイヤモンドを用いた光・電子デバイスの開発2013
- Author(s)
  小出　康夫，廖　梅勇，井村　将隆
- Journal Title
  
  スマートプロセス学会誌
  
  Volume: 第2巻 Pages: 224-229
- NAID
  10031200069
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249054
[Journal Article] Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric2013
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <11-20> and <1-100> Zone-Axes of AlN for Polarity Determination2013
- Author(s)
  M. Imura, U. Gautam, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] ダイヤモンドを用いた光・電子デバイスの開発2013
- Author(s)
  小出康夫、廖梅勇、井村将隆
- Journal Title
  
  スマートプロセス学会誌
  
  Volume: 2 Pages: 224-229
- NAID
  10031200069
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420349
[Journal Article] Interfacial chemical bonding state and band alignment of CaF2 hydrogenterminated diamond heterojunction2013
- Author(s)
  J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, and Y. Koide
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 113 Pages: 1237061-6
- DOI
  10.1063/1.4798366
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319, KAKENHI-PROJECT-25249054
[Journal Article] 窒化アルミニウム／ダイヤモンドヘテロ接合を用いた電界効果トランジスタ2012
- Author(s)
  井村将隆、廖梅勇、小出康夫
- Journal Title
  
  NEW DIAMOND 105
  
  Volume: 28 Pages: 36-38
- NAID
  40019318460
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond2012
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Journal Title
  
  Applied Physics Letters
  
  Volume: 101
- DOI
  10.1063/1.4772985
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond2012
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Integration of high-dielectric constant Ta2O5 oxides on diamond for power2012
- Author(s)
  S. H. Cheng, L. W. Sang, M. Y. Liao, J. W. Liu, M. Imura, H. D. Li, and Y. Koide
- Journal Title
  
  Applied Physics Letter
  
  Volume: 101 Pages: 232907-232907
- DOI
  10.1063/1.4770059
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319, KAKENHI-PROJECT-24760032
[Journal Article] Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices2012
- Author(s)
  S. H. Cheng, L. W. Sang, M. Y. Liao, J. W. Liu, M. Imura, H. D. Li, and Y. Koide
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Development of AlN/diamond heterojunction field effect transistors2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, T. Nagata, M. Y. Liao, Y. Koide, J. Yamamoto, K. Ban, M. Iwaya, and H. Amano
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 5 Pages: 206-209
- DOI
  10.1016/j.diamond.2012.01.020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] 窒化アルミニウム/ダイヤモンドヘテロ接合を用いた電界効果トランジスタ2012
- Author(s)
  井村将隆、廖梅勇、小出康夫
- Journal Title
  
  NEW DIAMOND
  
  Volume: 第105号, Vol. 28 No. 2 Pages: 36-38
- NAID
  40019318460
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Development of AlN/diamond heterojunction field effect transistors2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, T. Nagata, M. Y. Liao, Y. Koide, J. Yamamoto, K. Ban, M. Iwaya, and H. Amano
- Journal Title
  
  Diam. Relat. Mat.
  
  Volume: 24 Pages: 206-209
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Demonstration of Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011
- Author(s)
  M. Imura, R. Hayakawa, E. Watanabe, M. Y. Liao, Y. Koide, and H. Amano
- Journal Title
  
  Physica Status Solidi (RRL)
  
  Volume: 5 Pages: 125-127
- DOI
  10.1002/pssr.201105024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Demonstration of diamond field effect transistors by AlN/diamond heterostructure2011
- Author(s)
  M. Imura, R. Hayakawa, E. Watanabe, M. Y. Liao, Y. Koide, and H. Amano
- Journal Title
  
  Phys. Status Solidi-Rapid Res. Lett.
  
  Volume: 5 Pages: 125-127
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Demonstration of Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011
- Author(s)
  M.Imura, R.Hayakawa, E.Watanabe, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Physica Status Solidi (RRL) 3
  
  Pages: 125-127
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Demonstration of Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011
- Author(s)
  M.Imura, R.Hayakawa, E.Watanabe, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Physica Status Solidi (RRL)
  
  Volume: 3 Pages: 125-127
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Analysis of polar direction of AlN grown on(0001)sapphire and 6H-Si C substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy2010
- Author(s)
  M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
- Journal Title
  
  Physica Status Solidi(c) (In press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Growth mechanism of c-axis-oriented AlN on(111)diamond substrates by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Journal of Crystal Growth 312
  
  Pages: 1325-1328
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy2010
- Author(s)
  M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
- Journal Title
  
  Physica Status Solidi (c)
  
  Volume: 7 Pages: 2365-2367
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Microstructure of AlN with two-domain structure on(001)diamond substrate grown by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Diamond & Related Materials 10
  
  Pages: 131-133
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Growth mechanism of c-axis oriented AlN on(001)diamond substrates by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Journal of Crystal Growth 312
  
  Pages: 368-372
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 312 Pages: 1325-1328
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy2010
- Author(s)
  M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
- Journal Title
  
  Physica Status Solidi (c) 7
  
  Pages: 2365-2367
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Growth mechanism of c-axis oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Journal of Crystal Growth 312
  
  Pages: 368-372
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Diamond, Related Materials 10
  
  Pages: 131-133
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Diamond & Related Materials
  
  Volume: 10 Pages: 131-133
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Journal of Crystal Growth 312
  
  Pages: 1325-1328
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Growth mechanism of c-axis oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 312 Pages: 368-372
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760268
[Journal Article] Ultraviolet Detectors Based on Ultraviolet- Ozone Modified Hydrogenated Diamond Surfaces2009
- Author(s)
  Jose Alvarez, Meiyong Liao, Jean-Paul Kleider, Yasuo Koide, and Masataka Imura
- Journal Title
  
  Appl. Phys. Express vol. 2, No. 6
- NAID
  10025086818
- Data Source
  KAKENHI-PROJECT-18360341
[Journal Article] Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on p+-Diamond Substrates2009
- Author(s)
  M. Imura, M. Y. Liao, J. Alvarez, and Y. Koide.
- Journal Title
  
  Diamond Relat. Mater. vol. 18
  
  Pages: 296-298
- Data Source
  KAKENHI-PROJECT-18360341
[Journal Article] Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on p+-Diamond Substrates2008
- Author(s)
  Masataka Imura
- Journal Title
  
  Diamond Relat. Mater 18
  
  Pages: 296-298
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360341
[Journal Article] Vertical-type Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on Heavily Boron-doped p+-Diamond Substrate2008
- Author(s)
  Masataka Imura
- Journal Title
  
  Diamond Relat. Mater 17
  
  Pages: 1234-1243
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360341
[Journal Article] Persistent positive and transient absolute negative photoconductivity observed in diamond photodetectors2008
- Author(s)
  M. Y. Liao, Y. Koide, J. Alvarez, M. Imura, and J. P. Kleider
- Journal Title
  
  Phys. Rev. B vol. 78
- Data Source
  KAKENHI-PROJECT-18360341
[Journal Article] Vertical-type Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on Heavily Boron-doped p+-Diamond Substrate2008
- Author(s)
  M. Imura, M. Y. Liao, J. Alvarez, and Y. Koide
- Journal Title
  
  Diamond Relat. Mater. vol. 17
  
  Pages: 1234-1243
- Data Source
  KAKENHI-PROJECT-18360341
[Journal Article] Submicron metal-semiconductor-metal dia- mond photodiodes toward improving the responsivity2007
- Author(s)
  M. Y. Liao, J. Alvarez, M. Imura, and Y. Koide
- Journal Title
  
  Appl. Phys. Lett. vol. 91
  
  Pages: 163510-163510
- Data Source
  KAKENHI-PROJECT-18360341
[Journal Article] Growth mechanism of c-axis oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy
- Author(s)
  Masataka Imura
- Journal Title
  
  Journal of Crystal Growth
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19656183
[Patent] ノーマリーオフ特性を有する水素化ダイヤモンドＭＩＳＦＥＴの製造方法2015
- Inventor(s)
  劉江偉小出康夫リャオメイヨン井村将隆
- Industrial Property Rights Holder
  劉江偉小出康夫リャオメイヨン井村将隆
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2015-174571
- Filing Date
  2015-09-04
- Data Source
  KAKENHI-PROJECT-25249054
[Patent] 電界効果トランジスタ及びその製造方法2010
- Inventor(s)
  井村将隆、小出康夫、リャオメイヨン、早川竜馬、天野浩
- Industrial Property Rights Holder
  井村将隆
- Industrial Property Number
  2010-231352
- Filing Date
  2010-10-14
- Data Source
  KAKENHI-PROJECT-21760268
[Patent] 電界効果トランジスタ及びその製造方法2010
- Inventor(s)
  井村将隆、早川竜馬、廖梅勇、小出康夫、天野浩
- Industrial Property Rights Holder
  物質・材料研究機構
- Industrial Property Number
  2010-231352
- Filing Date
  2010-10-14
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] InGaNの表面-バルク電子状態評価2019
- Author(s)
  井村将隆, 津田俊輔, 長田貴弘, 山下良之, 吉川英樹, 小林啓介, 小出康夫, 太田優一, 村田秀信, 山口智広, 金子昌充, 荒木努, 名西やすし
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] Electronic structures of InGaN alloys2019
- Author(s)
  M. Imura and Y. Ota
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] メタルマスクを用いた(111)ダイヤモンド選択成長と水素終端ダイヤモンドFETへの応用2019
- Author(s)
  井村将隆, 大里啓孝, 廖梅勇, 小出康夫
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] 原子配列に対するInGaNの電子状態依存性評価2019
- Author(s)
  井村将隆, 太田優一
- Organizer
  第38回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] Selective growth of diamond (111) by metal mask and its application for hydrogen terminated diamond FET2019
- Author(s)
  M. Imura, H. Oosato, M. Y. Liao, and Y. Koide
- Organizer
  13th Conference on New Diamond and Nano Carbons (NDNC2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04501
[Presentation] InGaN系窒化物半導体の表面ーバルク電子状態評価2018
- Author(s)
  井村将隆, 小出康夫, 荒木努, 名西やすし
- Organizer
  第110回研究会・特別公開シンポジウム「紫外発光デバイスの最前線と将来展望」
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Enhancement-mode hydrogenated diamond MOSFETs,“29th International Conference on Diamond and Carbon Materials2018
- Author(s)
  J. Liu, M. Liao, M. Imura, Y. Koide
- Organizer
  ICDCM 2018
- Invited
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] コヒーレントα-Al2O3/Ga2O3超格子の作製2018
- Author(s)
  加藤勇次，井村将隆，中山佳子，竹口雅樹，大島孝仁
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K13673
[Presentation] 硬X線光電子分光法を用いたアンドープInxGa1-xN(0≦x≦1)の表面ーバルク電子状態評価2018
- Author(s)
  井村将隆, 津田俊輔, 長田貴弘, 吉川英樹, 山下良之, 小林啓介, 小出康夫, 山口智広, 荒木努, 名西やすし
- Organizer
  第37回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Systematic investigation of surface and bulk electronic structures of unintentionally-doped InxGa1-xN (0≦x≦1) epilayers by hard X-ray photoelectron spectroscopy2018
- Author(s)
  M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, Y. Anli, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, T. Araki, and Y. Nanishi
- Organizer
  International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] 窒化アルミニウム成膜時のIn Situ測定2018
- Author(s)
  井村将隆
- Organizer
  第65回応用物理学会春季学術講演会ランチョンセミナー
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] 硬X線光電子分光法を用いたInGaN系窒化物半導体の表面ーバルク電子状態評価2018
- Author(s)
  井村将隆, 小出康夫, 荒木努, 名西やすし
- Organizer
  第10回ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] High-quality diamond epitaxial layer growth and electron devices application2018
- Author(s)
  Y. Koide, J.W. Liu, M. Imura, and M.Y. Liao
- Organizer
  SSDM2018
- Invited
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] Development of AlN/Diamond heterostructure formation and unique interface property2018
- Author(s)
  M. Imura, M. Y. Liao, and Y. Koide
- Organizer
  European Materials Research Society (E-MRS) 2018 Fall Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] III-nitride/diamond heterojunction2018
- Author(s)
  M. Imura, M. Y. Liao, and Y. Koide
- Organizer
  4th JST Sakura Science Workshop
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Electrical properties of H-terminated diamond FETs with AlN gate2018
- Author(s)
  Y. Koide, R. G. Banal, M. Imura, J.W. Liu, and M.Y. Liao
- Organizer
  4th E-MRS & MRS-J, Symposium
- Invited
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] Mgドーピングによる高In組成InGaNの表面-バルク電子状態変化2018
- Author(s)
  井村将隆, 津田俊輔, 長田貴弘, 山下良之, 吉川英樹, 小林啓介, 小出康夫, 山口智広, 金子昌充, 上松尚, 荒木努, 名西やすし
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Microstructure of In0.20Ga0.80N nanowires on Si (111) substrate evaluated by aberration-corrected scanning transmission electron microscopy2017
- Author(s)
  M. Imura, R. G. Banal, Y. Koide, Y. Nakayama, M. Takeguchi, S. Mizutani, T. Tabata, S. Nakagawa, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel2017
- Author(s)
  M. Imura, R. G. Ryan, M. Liao, J. Liu, T. Aizawa, A. Tanaka, H. Iwai, T. Mano, Y. Koide
- Organizer
  The 11th Conference on New Diamond and Nano Carbons (NDNC2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] High-current triple-gate H-diamond MOSFET2017
- Author(s)
  KOIDE, Yasuo, LIU, Jiangwei, LIAO, Meiyong, IMURA, Masataka.
- Organizer
  New Diamond and Nano Carbon Conference, (NDNC2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] Vacuum-Ultra-Violet Diamond-based Photodetector for high-power excimer lamp2017
- Author(s)
  M. Imura, M. Liao, and Y. Koide
- Organizer
  International Workshop on UV Materials and Devices 2017 (IWUMD2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Normally-on/off control of diamond FETs and logic circuit demonstration2017
- Author(s)
  Y. Koide, J.W. Liu, M. Imura, and M.Y. Liao
- Organizer
  E-MRS, Symposium O, Diamond for electron devices II, (Warsaw, Poland)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] Microstructure and electrical property of AlN/Diamond(111) heterojunction2017
- Author(s)
  M. Imura, M. Liao, and Y. Koide
- Organizer
  OIST Diamond WS2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy2017
- Author(s)
  M. Imura, S. Tsuda, T. Nagata, A. L. Yang, Y. Yamashita, H. Yoshikawa,Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS12)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Improvement on electrical properties of H-terminated diamond FETs using sputter deposition AlN/ atomic layer deposition Al2O3 stack gate structure2017
- Author(s)
  M. Imura, R. G. Banal, J. Liu, M. Liao, and Y. Koide
- Organizer
  28th International Conference on Diamond and Carbon Materials (ICDCM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Microstructure of Boron-doped AlN Epitaxial Layer Grown by Metal-Organic Vapor Phase Epitaxy2017
- Author(s)
  M. Imura, Y. Ota, R. G. Banal, and Y. Koide
- Organizer
  29th International Conference on Defects in Semiconductors (ICDS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] III-nitride/diamond hybrid systems2017
- Author(s)
  M. Imura, M. Liao, and Y. Koide
- Organizer
  3N-Lab Workshop Tsukuba-Grenoble for Diamond and GaN
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Structural Property of Boron-doped AlN grown by Metal-Organic Vapor Phase Epitaxy2016
- Author(s)
  M. Imura, Y. Ota, R. G. Banal, Y. Koide
- Organizer
  International workshop on UV materials and devices (IWUMD-2016)
- Place of Presentation
  Peking University, Beijing, China
- Year and Date
  2016-07-27
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Microstructure and Hole Accumulation Mechanism of AlN/Diamond(111) Het erojunctions Prepared by MOVPE2016
- Author(s)
  M. Imura, R. G. Banal, M. Y. Liao, J. W. Liu, Y. Koide, T. Matsumoto, N. Shibata, Y. Ikuhara
- Organizer
  International Conference on Diamond and Carbon Materials 2016 (ICDCM2016)
- Place of Presentation
  Le Corum, Montpellier, France
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Microstructure and hole accumulation mechanism of AlN/Diamond(111) heterojunctions prepared by MOVPE2016
- Author(s)
  M. Imura, R.G. Banal, M.Y. Liao, J. Liu, Y.Koide , T. Matsumoto, N. Shibata, Y. Ikuhara
- Organizer
  10th International International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
- Place of Presentation
  Xi'an, China
- Year and Date
  2016-09-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] MOVPE法により成長させたボロンドープAlNの構造評価2016
- Author(s)
  井村将隆, 太田優一, R. G. Banal, 小出康夫
- Organizer
  第35回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖
- Year and Date
  2016-07-06
- Data Source
  KAKENHI-PROJECT-16K06330
[Presentation] Sputter deposition AlN and atomic layer deposition Al2O3 as bilayer gate materials for Hterminated diamond field effect transistors2016
- Author(s)
  R.G. Banal, M. Imura, J. Liu, M. Liao, and Y.Koide
- Organizer
  International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
- Place of Presentation
  Montpelier, France
- Year and Date
  2016-09-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06419
[Presentation] Sputter deposition AlN and atomic layer deposition Al2O3 as bilayer gate materials for Hterminated diamond field effect transistors2016
- Author(s)
  R.G. Banal, M. Imura, J. Liu, M. Liao, and Y.Koide
- Organizer
  International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
- Place of Presentation
  Montpelier, France
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249054
[Presentation] Microstructure and hole accumulation mechanism of AlN/Diamond(111) heterojunctions prepared by MOVPE,2016
- Author(s)
  M. Imura, R.G. Banal, M.Y. Liao, J. Liu, Y.Koide , T. Matsumoto, N. Shibata, Y. Ikuhara
- Organizer
  International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
- Place of Presentation
  Montpelier, France
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249054
[Presentation] ALD-Al2O3/SD-AlN as Bilayer Gate Material for Diamond FET2015
- Author(s)
  R.G.Banal、井村将隆、劉江偉、小出康夫
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Effect of Boron incorporation on the structural quality of AlBN layer s grown by MOVPE2015
- Author(s)
  M. Imura, Y. Ota, R. G. Banal, and Y. Koide
- Organizer
  The 6th International Symposium on Growth of III-Nitrides(ISGN-6)
- Place of Presentation
  Act City, Hamamatsu, Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Low-temperature AlN Buffer Layer Technique to Eliminate the Small-angle Grain Boundary in AlN Grown on Sapphire Substrate2015
- Author(s)
  R. G. Banal, M. Imura, and Y. Koide
- Organizer
  The 6th International Symposium on Growth of III-Nitrides(ISGN-6)
- Place of Presentation
  Act City, Hamamatsu, Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] AlN/ダイヤモンド及びダイヤモンド/AlN/サファイア上のヘテロエピタキシャル成長2015
- Author(s)
  井村将隆、R.G.Banal、劉江偉、廖梅勇、小出康夫
- Organizer
  第29回ダイヤモンドシンポジウム
- Place of Presentation
  東京理科大学葛飾キャンパス
- Year and Date
  2015-11-17
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] 半導体の基礎II:窒化物半導体を用いた光・電子デバイス2015
- Author(s)
  井村将隆
- Organizer
  ソディック－未踏科学技術協会企業内セミナー(招待講演)
- Place of Presentation
  ソディック株式会社
- Year and Date
  2015-11-24
- Invited
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Control of normally-on/off in hydrogenated-diamond MISFET2015
- Author(s)
  劉江偉、廖梅勇、井村将隆、小出康夫
- Organizer
  第29回ダイヤモンドシンポジウム
- Place of Presentation
  東京理科大学葛飾キャンパス
- Year and Date
  2015-11-17
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] ZrO2 on hydrogenated-diamond: breakdown electric field interfacial band configuration and gate-drain distance scaling effect for electrical property of MISFET2015
- Author(s)
  劉江偉、M.Y.Liao、井村将隆、小出康夫
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Impedance Spectroscopy of Diamond MOS Structure2015
- Author(s)
  . Y. Liao, J. W. Liu, S. Liwen, D. Coatchup, J. L. Li, M. Imura, H. Ye, and Y. Koide
- Organizer
  9th International Conference on New Diamond and Nano Carbons (NDNC2015)
- Place of Presentation
  Shizuoka Granship, Shizuoka, Japan
- Year and Date
  2015-05-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Hydrogenated-diamond MISFET logic inverter2015
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  9th International Conference on New Diamond and Nano Carbons (NDNC2015)
- Place of Presentation
  Shizuoka Granship, Shizuoka, Japan
- Year and Date
  2015-05-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Hole channel formation mechanism in AlN/diamond heterojunction and high-k oxide gate diamond FETs2015
- Author(s)
  Y. Koide, M. Imura, J. W. Liu, M. Y. Liao, R. G. Banal, T. Matsumoto, N. Shibata, and Y. Ikuhara
- Organizer
  26th International Conference on Diamond and Carbon Materials (ICDCM2015)
- Place of Presentation
  Bad Homburg, Germany
- Year and Date
  2015-09-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Normally-off HfO2/diamond field effect transistors fabrication2014
- Author(s)
  劉江偉、M.Y.Liao、井村将隆、小出康夫
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] MOVPE法による(111)面ダイヤモンド基板上のAlNの高品質化2014
- Author(s)
  井村将隆、劉江偉、廖梅勇、小出康夫
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Al2O3 および HfO2/水素終端ダイヤモンド界面の周波数分散特性2014
- Author(s)
  小出康夫、劉江偉、M.Y.Liao、井村将隆、大里啓孝、渡辺英一郎、津谷大樹
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Band Configuration of HfO2/hydrogen-terminated Diamond Heterojunction Correlated with Electrical Properties of Metal/HfO2/hydrogen-terminated Diamond Diodes2013
- Author(s)
  J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano carbon conference (NDNC2013)
- Place of Presentation
  National University, Singapore.
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Atomic Layer Deposition Technique for Diamond-based Field Effect Transistors2013
- Author(s)
  M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
- Organizer
  NIMS Confrence 2013
- Place of Presentation
  Epochal Tsukuba, Japan.
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Interfacial Electronic Band Alignment of Ta2O5/hydrogen-terminated Diamond Heterojunction Determined by X-ray Photoelectron Spectroscopy2013
- Author(s)
  J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano carbon conference (NDNC2013)
- Place of Presentation
  National University, Singapore
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] AlN/ダイヤモンドヘテロ接合FETとMEMSスイッチ2013
- Author(s)
  小出康夫、廖梅勇、井村将隆
- Organizer
  応用物理学会応用電子物性分科会研究例会
- Place of Presentation
  金沢工業大学大学院虎ノ門キャンパス
- Invited
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Band configuration of HfO2/hydrogen-terminated diamond heterointerface correlated with electrical properties of metal/HfO2/hydrogen-terminated diamond diodes2013
- Author(s)
  J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano Carbons Conference (NDNC 2013)
- Place of Presentation
  Novotel Singapore Clarke Quay, Singapole
- Data Source
  KAKENHI-PROJECT-25249054
[Presentation] nterfacial Electronic Band Alignment of Ta2O5/hydrogen-terminated Diamond Heterojunction Determined by X-ray Photoelectron Spectroscopy2013
- Author(s)
  J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano carbon conference (NDNC2013)
- Place of Presentation
  National University, Singapore.
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Combination with Atomic Layer Deposition Technique for Fabrication of High-performance HfO2/diamond Metal-oxide-insulator Field Effect Transistors2013
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  NIMS conference 2013
- Place of Presentation
  Epochal Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] 原子層堆積法による水素終端ダイヤモンド上のAl2O3とHfO2の電子構造2013
- Author(s)
  劉. 江偉、廖梅勇、井村将隆、小出康夫
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Diamond Field Effect Transistors using Al2O3 Insulator/Surface p-Channel Diamond Prepared by Thermal Treatment with Hydrogen and Ammonia Atmosphere2013
- Author(s)
  M. Imura, H. Ohsato, E. Watanabe, D. Tsuya, J. Liu, M. Y. Liao, Y. Koide
- Organizer
  International Conference on Diamond and Carbon Materials 2013 (ICDCM 2013)
- Place of Presentation
  Riva del Garda, Italy
- Data Source
  KAKENHI-PROJECT-25249054
[Presentation] 次世代パワーデバイス用ダイヤモンド電界効果トランジスタ2013
- Author(s)
  井村将隆、小出康夫
- Organizer
  Nano tech 2013
- Place of Presentation
  つくば国際会議場
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] HfO2/Hydrogenated-diamond field effect transistors for power devices2013
- Author(s)
  劉江偉、M.Y.Liao、井村将隆、小出康夫
- Organizer
  第13回 NIMSフォーラム
- Place of Presentation
  東京国際フォーラム
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] AlN/ダイヤモンドヘテロ接合を用いた電子デバイス2013
- Author(s)
  井村将隆、廖梅勇、小出康夫
- Organizer
  第43回結晶成長国内会議
- Place of Presentation
  長野市生涯学習センター
- Invited
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Interfacial electronic band alignment of Ta2O5/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy2013
- Author(s)
  J. W. Liu, S. H. Cheng, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano Carbons Conference (NDNC 2013)
- Place of Presentation
  Novotel Singapore Clarke Quay, Singapole
- Data Source
  KAKENHI-PROJECT-25249054
[Presentation] 次世代パワーデバイス用ダイヤモンド電界効果トランジスタ2013
- Author(s)
  井村将隆、小出康夫
- Organizer
  つくばテクノロジー・ショーケース2013
- Place of Presentation
  つくば国際会議場
- Year and Date
  2013-01-22
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] 原子層堆積法による水素終端ダイヤモンド上のAl2O3とHfO2の電子構造2013
- Author(s)
  劉. 江偉、廖梅勇、井村将隆、小出康夫
- Organizer
  第 60 回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] HfO2/diamond電界効果トランジスタの作成2013
- Author(s)
  劉江偉、M.Y.Liao、井村将隆、小出康夫
- Organizer
  第27回ダイヤモンドシンポジウム
- Place of Presentation
  日本工業大学
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Diamond field effect transistors using Al2O3 insulator / surface p-channel diamond prepared by thermal treatment with hydrogen and ammonia atmosphere2013
- Author(s)
  M. Imura, H. Ohsato, E. Watanabe, D. Tsuya, J. W. Liu, M. Y. Liao, and Y. Koide
- Organizer
  International Conference on Diamond and Carbon Materials 2013 (ICDCM2013)
- Place of Presentation
  Riva del Garda-Fierecongressi S.p.A.,Riva del Garda,Italy.
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Band Configuration of HfO2/hydrogen-terminated Diamond Heterojunction Correlated with Electrical Properties of Metal/HfO2/hydrogen-terminated Diamond Diodes2013
- Author(s)
  J. Liu, S. Cheng, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano carbon conference (NDNC2013)
- Place of Presentation
  National University, Singapore
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Fabrication of HfO2/hydrogenated diamond metal-oxide-semiconductor field effect transistors2013
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  International Conference on Diamond and Carbon Materials 2013 (ICDCM2013)
- Place of Presentation
  Riva del Garda-Fierecongressi S.p.A.,Riva del Garda,Italy.
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] 高濃度キャリアの電界制御を目指した強誘電体薄膜／ダイヤモンド接合2012
- Author(s)
  小出康夫、G.C.Chen、廖梅勇、井村将隆
- Organizer
  第72回応用応用物理学会学術講演会
- Place of Presentation
  愛媛大学&松山大学
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Metal/insulator/p-diamond Structure with Large-permittivity Insulator for Gate Field Controlling2012
- Author(s)
  Y. Koide, M. Y. Liao, M. Imura, and G. C. Chen
- Organizer
  New Diamond and Nano Carbons 2012 (NDNC2012)
- Place of Presentation
  Conrad San Juan Condado Plaza,San Juan,Puerto Rico
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] pチャネルAlN/Diamondヘテロ接合電界効果トランジスタ2012
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、MeiyongLiao、小出康夫、天野浩、松本翼、山崎聡
- Organizer
  第31回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Al2O3/Diamond Field Effect Transistors using Surface p-Channel Prepared by Thermal Treatment with Hydrogen and Ammonia Atmosphere2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano:
- Organizer
  IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] High dielectric constant oxide on diamond for high power devices2012
- Author(s)
  S. H. Cheng, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] 次世代パワーデバイス用ダイヤモンド電界効果トランジスタ2012
- Author(s)
  井村将隆、小出康夫
- Organizer
  第12回NIMSフォーラム
- Place of Presentation
  東京国際フォーラム
- Year and Date
  2012-10-25
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Field Effect Transistors by AlN/Diamond Heterostructure - past & future -2012
- Author(s)
  M.Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  Hasselt Diamond Workshop 2012 SBDD XVII
- Place of Presentation
  The cultuurcentrum Hasselt ,Hasselt,Belgium
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] TEM-CBED法を用いたAlNの極性決定評価2012
- Author(s)
  井村将隆、中島清美、小出康夫、天野浩、津田健治
- Organizer
  第31回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Electrical Transport Mechanism of Field Effect Transistors by AlN/Diamond Heterostructure2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  International Conference on Diamond and Carbon Materials (Diamond2012)
- Place of Presentation
  The Granada Congress and Exhibitions Centre, Granada, Spain
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] High-k insulator/p-diamond structure for gate voltage controlling / High-k insulator/p-diamond structure for gate voltage controlling2012
- Author(s)
  Y. Koide, G. C. Chen, M. Y. Liao and M. Imura
- Organizer
  International Conference on Diamond and Carbon Materials (Diamond2012)
- Place of Presentation
  The Granada Congress and Exhibitions Centre, Granada, Spain
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Diamond-FET using AlN/diamond heterojunction2012
- Author(s)
  M. Imura, M. Y. Liao, and Y. Koide
- Organizer
  IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Electrical property of high-k insulator/p-diamond diodes for electric field controlling2012
- Author(s)
  Y. Koide, G. C. Chen, M. Y. Liao, and M. Imura
- Organizer
  IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] 原子層堆積法により成膜したアルミナゲート表面チャネルダイヤモンドFETの特性評価2012
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、MeiyongLiao、小出康夫、天野浩、松本翼、山崎聡
- Organizer
  第26回ダイヤモンドシンポジウム
- Place of Presentation
  青山学院大学青山キャンパス
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] High-k insulator/p-diamond structure for gate voltage controlling / High-k insulator/p-diamond structure for gate voltage controlling2012
- Author(s)
  Y. Koide, G. C. Chen, M. Y. Liao, and M. Imura
- Organizer
  International Conference on Diamond and Carbon Materials (Diamond2012)
- Place of Presentation
  the Granada Congress and Exhibitions Centre, Granada, Spain
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] 高濃度キャリアの電界制御を目指した強誘電体薄膜/ダイヤモンド接合2012
- Author(s)
  小出康夫、G.C.Chen、廖梅勇、井村将隆
- Organizer
  第72回応用応用物理学会学術講演会
- Place of Presentation
  愛媛大学&松山大学
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Electrical Transport Mechanism of Field Effect Transistors by AlN/Diamond Heterostructure2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  International Conference on Diamond and Carbon Materials (Diamond2012)
- Place of Presentation
  the Granada Congress and Exhibitions Centre, Granada, Spain
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Field Effect Transistors by AlN/Diamond Heterostructure - past & future -.2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  Hasselt Diamond Workshop 2012 SBDD XVII(招待講演)
- Place of Presentation
  The cultuurcentrum Hasselt ,Hasselt,Belgium
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Polarity determination of AlN by convergent beam electron diffraction method based on transmission electron microscopy2012
- Author(s)
  M. Imura, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN 2012)
- Place of Presentation
  Sapporo Convention Center,Sapporo,Japan
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Development of Diamond Field Effect Transistors by AlN / Diamond Heterostructure2011
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  22nd European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes and Nitrides (Diamond2011)
- Place of Presentation
  Garmisch - Partenkirchen,Bavaria,German
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Demonstration of AlN/Diamond Heterostructure Field Effect Transistors2011
- Author(s)
  M. Imura, R. Hayakawa, H. Oosato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  MANA International Symposium 2011 (MANA Sympo. 2011)
- Place of Presentation
  Epochal Tsukuba, Tsukuba, Japan
- Year and Date
  2011-03-03
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  International Conference on New Diamond and Nano Carbons 2011 (NDNC2011)
- Place of Presentation
  Kunibiki Messe, Matsue, Japan
- Year and Date
  2011-05-19
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Development of Diamond Field Effect Transistors by AlN / Diamond Heterostructure2011
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  22nd European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes and Nitrides(Diamond2011)
- Place of Presentation
  Garmisch - Partenkirchen,Bavaria,German
- Year and Date
  2011-09-07
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Demonstration of AlN/Diamond Heterostructure Field Effect Transistors2011
- Author(s)
  M.Imura, R.Hayakawa, H.Oosato, E.Watanabe, D.Tsuya, M.Y.Liao, Y.Koide, H.Amano
- Organizer
  MANA International Symposium 2011
- Place of Presentation
  Epochal Tsukuba, Japan
- Year and Date
  2011-03-03
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] AlN/ダイヤモンドヘテロ構造トランジスタ2011
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] AlN/Diamondヘテロ接合型ダイヤモンド電界効果トランジスタ2011
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
- Organizer
  第72回応用応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011
- Author(s)
  M.Imura, R.Hayakawa, H.Oosato, E.Watanabe, D.Tsuya, M.Y.Liao, Y.Koide, H.Amanol.
- Organizer
  International Conference on New Diamond and Nano Carbons 2011 (NDNC2011)
- Place of Presentation
  Kunibiki Nesse, Matsue, Japan.
- Year and Date
  2011-05-19
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] AlN/Diamondヘテロ接合型電界効果トランジスタの開発2011
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
- Organizer
  日本金属学会2011年秋
- Place of Presentation
  沖縄コンベンセンションセンター
- Year and Date
  2011-11-06
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] AlN/Diamondヘテロ接合型ダイヤモンド電界効果トランジスタの開発2011
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
- Organizer
  第25回ダイヤモンドシンポジウム
- Place of Presentation
  産業技術総合研究所共用講堂
- Year and Date
  2011-12-07
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Demonstration of AlN/Diamond Heterostructure Field Effect Transistors2011
- Author(s)
  M.Imura, R.Hayakawa, H.Oosato, E.Watanabe, D.Tsuya, M.Y.Liao, Y.Koide, H.Amanol.
- Organizer
  MANA International Symposium 2011 (MANA Sympo.2011)
- Place of Presentation
  Epochal Tsukuba, Tsukuba, Japan.
- Year and Date
  2011-03-03
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Microstructure of AlN layer on (001) and (111) diamond substrates by metal organic vapor phase epitaxy2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Organizer
  MANA International Symposium 2010 (MANA Sympo.2010)
- Place of Presentation
  Epochal Tsukuba, Tsukuba, Japan.
- Year and Date
  2010-03-04
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] 様々な面のダイヤモンド基板上への窒化アルミニウム結晶成長2010
- Author(s)
  井村将隆、中島清美、廖梅勇、小出康夫、天野浩
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学.
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Microstructure of AlN layer on(001)and(111)diamond substrates by metal organic vapor phase epitaxy2010
- Author(s)
  井村将隆, 中島清美, 廖梅勇, 小出康夫, 天野浩
- Organizer
  MANA International Symposium 2010(MANA Sympo.2010)
- Place of Presentation
  Epochal Tsukuba, Tsukuba, Japan
- Year and Date
  2010-03-04
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] 様々な面のダイヤモンド基板上への窒化アルミニウム結晶成長2010
- Author(s)
  井村将隆、中島清美、廖梅勇、小出康夫、天野浩
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Growth of AlN on (001), (110), and (111) diamond substrates2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Organizer
  The 4th International Conference on New Diamond and Nano Carbons
- Place of Presentation
  Garden hotel, Suzhou, China
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Growth of AlN on (001), (110), and (111) diamond substrates2010
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Organizer
  The 4th International Conference on New Diamond and Nano Carbons (NDNC2010)
- Place of Presentation
  the Garden hotel, Suzhou, China.
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Growth of AlN on(001)diamond substrate by metal-organic vapor phase epitaxy2009
- Author(s)
  井村将隆, 中島清美, 廖梅勇, 小出康夫, 天野浩
- Organizer
  3rd International Conference on New Diamond and Nano Carbons(NDNC2009)
- Place of Presentation
  Traverse City, Michigan, USA
- Year and Date
  2009-06-09
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Microstructure analysis for growth process of AlN layer on (001) and (111) diamond substrates by a metal-organic vapor phase epitaxy2009
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Organizer
  The 17th American Conference on Crystal Growth and Epitaxy (ACCGE17)
- Place of Presentation
  Lake Geneva, Wisconsin, USA.
- Year and Date
  2009-08-12
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Analysis of polar direction of AlN grown by metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy2009
- Author(s)
  M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
- Organizer
  The 36th International Symposium on Compound Semiconductors (ISCS2009)
- Place of Presentation
  University of California, Santa Barbara, USA.
- Year and Date
  2009-09-01
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Microstructure analysis for growth process of AlN layer on(001)and(111)diamond substrates by a metal-organic vapor phase epitaxy2009
- Author(s)
  井村将隆, 中島清美, 廖梅勇, 小出康夫, 天野浩
- Organizer
  The 17th American Conference on Crystal Growth and Epitaxy(ACCGE17)
- Place of Presentation
  Lake Geneva, Wisconsin, USA
- Year and Date
  2009-08-12
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] MOVPE法による(001)面ダイヤモンド基板上の窒化アルミニウムの成長2009
- Author(s)
  井村将隆、中島清美、廖梅勇、小出康夫、天野浩
- Organizer
  第28回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖.
- Year and Date
  2009-07-10
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Analysis of polar direction of AlN grown by metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy2009
- Author(s)
  M.Imura, T.Ohnishi, M.Sumiya, M.Y.Liao, Y.Koide, H.Amano, M.Lippmaa
- Organizer
  The 36th International Symposium on Compound Semiconductors(ISCS2009)
- Place of Presentation
  University of California, Santa Barbara, USA
- Year and Date
  2009-09-01
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] MOVPE法によるダイヤモンド基板上の窒化アルミニウムの成長2009
- Author(s)
  井村将隆
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学,茨城県つくば市
- Data Source
  KAKENHI-PROJECT-19656183
[Presentation] MOVPE法による(001)面ダイヤモンド基板上の窒化アルミニウムの成長2009
- Author(s)
  井村将隆、中島清美、廖梅勇、小出康夫、天野浩
- Organizer
  第28回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖
- Year and Date
  2009-07-10
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] Growth of AlN on (001) diamond substrate by metal-organic vapor phase epitaxy2009
- Author(s)
  M.Imura, K.Nakajima, M.Y.Liao, Y.Koide, H.Amano
- Organizer
  The 3rd International Conference on New Diamond and Nano Carbons (NDNC2009)
- Place of Presentation
  Traverse City, Michigan, USA.
- Year and Date
  2009-06-09
- Data Source
  KAKENHI-PROJECT-21760268
[Presentation] ダイヤモンド基板によるショットキーフォトダイオード特性への影響2008
- Author(s)
  井村将隆
- Organizer
  第22回ダイヤモンドシンポジウム
- Place of Presentation
  早稲田大学大久保キャンパス,東京都
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] Vertical-type Schottky-Barrier Photodiode using p- / p+-Diamond Substrates2008
- Author(s)
  井村将隆
- Organizer
  2nd International Conference on New Diamond and Nano Carbons
- Place of Presentation
  Grand Hotel, Taipei, Taiwan
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] Devices design in solar-blind diamond photodetectors2008
- Author(s)
  M. Y. Liao, J. Alvarez, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano Carbons (NDNC2008)
- Place of Presentation
  Taipei, Taiwan(Outstanding Poster Award)
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] Development of flame sensor using diamond visible-blind ultraviolet photo- diode2008
- Author(s)
  Y. Koide, M. Y. Liao, J. Alvarez, M. Imura, K. Sueishi, and F. Yoshifusa
- Organizer
  New Diamond and Nano Carbons (NDNC2008)
- Place of Presentation
  Taipei, Taiwan
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] Diamond deep-UV photo- detector with high sensitivity and thermal stability2008
- Author(s)
  Y. Koide, M. Y. Liao, M. Imura, and J. Alvarez
- Organizer
  The 19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide, (Diamond 2008), Abst. 13.1
- Place of Presentation
  Sitges, Spain
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] Schottky-barrier photodiode using p-diamond epilayer grown on p+-diamond substrates2008
- Author(s)
  井村将隆
- Organizer
  EMS27
- Place of Presentation
  ラフォーレ修善寺,静岡県伊豆市
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] Vertical-type Schottcky-Barrie Photodiode using p-Diamond Epilayer Grown on Heavily Boron-doped p+-Diamond Substrate2008
- Author(s)
  M. Imura, Y. Koide, M. Y. Liao, and J. Alvarez
- Organizer
  New Diamond and Nano Carbons (NDNC2008)
- Place of Presentation
  Taipei, Taiwan
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] 導電性p+-ダイヤモンド基板を用いたショットキーフォトダイオード2008
- Author(s)
  井村将隆
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学,愛知県春日井市
- Data Source
  KAKENHI-PROJECT-18360341
[Presentation] Fabrication of low on-resistance diamond field effect transistors
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano Carbons Conference (NDNC 2014)
- Place of Presentation
  Hyatt Regency Chicago, Chicago, Illinois, USA,
- Year and Date
  2014-05-25 – 2014-05-29
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] ウェットアニールダイヤモンド(111)上 ALD-Al2O3 膜を用いたMOS キャパシタの電気的特性
- Author(s)
  上田諒浩、宮田大輔、徳田規夫、井村将隆、小出康夫、小倉政彦、山崎聡、猪熊孝夫
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス.
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Frequency dispersion properties at Al2O3 and HfO2/H-terminated diamond interfaces
- Author(s)
  Y. Koide, J. Liu, M. Y. Liao, M. Imura, H. Oosato, and E. Watanabe
- Organizer
  New Diamond and Nano Carbons Conference (NDNC 2014)
- Place of Presentation
  Hyatt Regency Chicago, Chicago, Illinois, USA,
- Year and Date
  2014-05-25 – 2014-05-29
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] High-k/hydrogenated-diamond metal-insulator-semiconductor field effect transistors fabrication
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  International Conference on Diamond and Carbon Materials (ICDCM2014)
- Place of Presentation
  Melia Castilla, Madrid, Spain.
- Year and Date
  2014-09-07 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Hydrogenated-diamond logic inverter fabrication with enhancement-mode metal-insulator-semiconductor field effect transistor
- Author(s)
  劉江偉、M.Y.Liao、井村将隆、小出康夫
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス.
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] AlN/ (111)面ダイヤモンドヘテロ接合界面の微細構造観察と電気的特性評価
- Author(s)
  井村将隆、劉江偉、廖梅勇、小出康夫、松元隆夫、柴田直哉、幾原雄一
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス.
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  New Diamond and Nano Carbons Conference (NDNC 2014)
- Place of Presentation
  Hyatt Regency Chicago, Chicago, Illinois, USA,
- Year and Date
  2014-05-25 – 2014-05-29
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Energy-Band Offset of AlN/Diamond(111) Heterojunction Determined by X- ray Photoelectron Spectroscopy
- Author(s)
  M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
- Organizer
  International Conference on Solid State Devices and Materials 2014 (SSDM2014)
- Place of Presentation
  Epochal Tsukuba, Tsukuba, Japan.
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Recent progress of field effect transistors by AlN/Diamond Heterostructure
- Author(s)
  M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
- Organizer
  The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014)
- Place of Presentation
  Fukuoka University, Fukuoka, Japan.
- Year and Date
  2014-08-24 – 2014-08-30
- Invited
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] 窒化物半導体の界面制御とナノラミネート特異構造を用いた電子デバイスの開発
- Author(s)
  小出康夫、井村将隆、劉江偉、M.Y.Liao
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス.
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] X線光電子分光法によるAlN/(111)ダイヤモンドヘテロ接合のエネルギーバンドオフセット評価
- Author(s)
  井村将隆、田中彰博、岩井秀夫、劉江偉、廖梅勇、小出康夫
- Organizer
  第33回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Year and Date
  2014-07-07 – 2014-07-09
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Atomically controlled diamond surfaces and interfaces
- Author(s)
  N. Tokuda, D. Miyata, A. Ueda, T. Chonan, T. Minamiyama, T. Inokuma, M. Imura, Y. Koide, M. Ogura, T. Makino, D. Takeuchi, and S. Yamsaki
- Organizer
  25th International Conference on Diamond and Carbon Materials
- Place of Presentation
  Melia Castilla, Madrid, Spain., (2014),
- Year and Date
  2014-09-07 – 2014-09-11
- Invited
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] HfO2 on hydrogenated-diamond for field effect transistors
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014)
- Place of Presentation
  Fukuoka University, Fukuoka, Japan.
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Atomic layer deposited Al2O3/diamond field effect transistors using surface p-channel prepared by thermal treatment with H2+NH3 gases
- Author(s)
  M. Imura, J. W. Liu, M. Y. Liao, and Y. Koide
- Organizer
  14th International Conference on Atomic Layer Deposition (ALD2014)
- Place of Presentation
  Hotel Granvia Kyoto, Kyoto, Japan.
- Year and Date
  2014-06-15 – 2014-06-18
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] “Diamond metal-insulator-semiconductor field effect transistor logic inverters
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  International Symposium on Single Crystal Diamond Electronics and the Fourth Chinese Vacuum Forum (SCDE 2014)
- Place of Presentation
  Xian China high-speed Le Grand Large Hotel, Xian, China.
- Year and Date
  2014-06-12 – 2014-06-17
- Data Source
  KAKENHI-PROJECT-25420349
[Presentation] Atomic Layer Deposited HfO2/Al2O3 Multi-nano-layer on Diamond for Field Effect Transistor
- Author(s)
  J. Liu, M. Y. Liao, M. Imura, and Y. Koide
- Organizer
  The 4th Annual World Congress of Nano-S&T
- Place of Presentation
  Qingdao, Qingdao, China.
- Year and Date
  2014-10-29 – 2014-10-30
- Data Source
  KAKENHI-PROJECT-25420349

1. KOIDE Yasuo (70195650)

# of Collaborated Projects: 8 results

# of Collaborated Products: 167 results
2. 廖梅勇 (70528950)

# of Collaborated Projects: 3 results

# of Collaborated Products: 32 results
3. AMANO Hiroshi (60202694)

# of Collaborated Projects: 2 results

# of Collaborated Products: 23 results
4. 劉江偉 (30732119)

# of Collaborated Projects: 2 results

# of Collaborated Products: 15 results
5. MEIYONG Liao (00425555)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
6. TSUYA DAIJU (10469760)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
7. Oshima Takayoshi (60583151)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
8. TAKAHASHI Kazutoshi (30332183)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. ALVAREZ Jose

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
10. KATO Yuji

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
11. NANISHI Yasushi

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
12. YAMAGUCHI Tomohiro

# of Collaborated Projects: 0 results

# of Collaborated Products: 3 results
13. SUDA Jun

# of Collaborated Projects: 0 results

# of Collaborated Products: 3 results
14. TOKUDA Norio

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
15. 荒木努

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
16. 柴田直哉

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
17. 幾原雄一

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
18. SANG Liwen

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
19. 加藤宙光

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

imura masataka 井村 将隆

IMURA Masataka 井村 将隆

Research Projects

Research Products

Co-Researchers

Develop a carrier control method for diamond using heterojunction doping technique

Principal Investigator

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AlN／ダイヤモンドpin接合を用いたダイヤモンド電子デバイスの高性能化Principal Investigator

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Development of diamond electron device using III-nitride nanolaminate singularity structure

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Investigation of Ferroelectric Property Based on Nitride/Oxide Stack Structure and Its Application for Diamond FETPrincipal Investigator

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Fabrication of an ultra-wide-band-gap semiconductor having a 7-eV band gap

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Development of new diamond electron device using huge polarization charge

Principal Investigator

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Energy Saving Normally-off p-Channel Diamond FET with High-Current OperationPrincipal Investigator

Principal Investigator

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Development of AlN/Diamond Heterojunction Field Effect TransistorPrincipal Investigator

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Realization of ultra violet environment devices by using diamond and AlN hybrid structurePrincipal Investigator

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ワイドギャップ半導体ヘテロ接合における電荷移送ドーピング法の開発

Principal Investigator

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Preparation of guideline for sensing deep ultra-violet light using metal/diamond interfaces

Principal Investigator

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[Book] Study of Grain Boundary Character, Chapter 32017

Author(s)

Total Pages

Publisher

ISBN

Data Source

[Book] Study of Grain Boundary Character, Chapter 32016

Author(s)

Publisher

imura masataka 井村将隆

IMURA Masataka 井村将隆