WAKEJIMA Akio 分島彰男

… Alternative Names

分島彰男ワケジマアキオ

Wakejima Akio 分島彰男

Less

Researcher Number	80588575
Other IDs
Affiliation (Current)	2025: 熊本大学, 半導体・デジタル研究教育機構, 教授
Affiliation (based on the past Project Information) *help	2024: 熊本大学, 半導体・デジタル研究教育機構, 教授 2019 – 2021: 名古屋工業大学, 工学(系)研究科(研究院), 准教授 2015 – 2017: 名古屋工業大学, 工学(系)研究科(研究院), 准教授
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment Except Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Medium-sized Section 21:Electrical and electronic engineering and related fields
Keywords	Principal Investigator 透過型電子顕微鏡 / 原子間力顕微鏡 / 転位 / 欠陥 / AlGaN/GaN HEMT / 電流AFM / AFM / リーク電流 / トランジスタ / 窒化物半導体 … More Except Principal Investigator … More HEMT / モンテカルロシミュレーション / ドレイン電流密度 / 二次元電子ガス / GaN / 耐圧 / 電力増幅 / 高電子移動度トランジスタ / 高出力 / 窒化物半導体 / トランジスタ / 電力利得 / 破壊電界 / 無線電力伝送 / 電力増幅器 / AlGaN/GaN / 準ミリ波 Less

Study on drain current conduction mechanism in high-Al content AlGaN/GaN HEMTs
- Principal Investigator
  
  葛原正明
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Kwansei Gakuin University
Study on high-voltage and high-power nitrided-based transistor amplifiers operated at quasi-millimeter wave frequencies
- Principal Investigator
  
  Kuzuhara Masaaki
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Kwansei Gakuin University
  University of Fukui
Identification of Local Current Leakage Location for Mechanism of Leak Current in GaN TransistorsPrincipal Investigator
- Principal Investigator
  
  Wakejima Akio
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya Institute of Technology

All 2021 2016

All Journal Article Presentation

[Journal Article] Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs2021
- Author(s)
  Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Yoshio Honda, Sourajeet Roy, Hiroshi Amano, Biplab Sarkar
- Journal Title
  
  IEEE Journal of Electron Devices
  
  Volume: 9 Pages: 570-581
- DOI
  10.1109/jeds.2021.3081463
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04528, KAKENHI-PROJECT-19H00761
[Journal Article] 1. Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions2021
- Author(s)
  Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Sourajeet Roy, Biplab Sarkar
- Journal Title
  
  EEE Transactions on Electron Devices
  
  Volume: 68 Issue: 12 Pages: 6059-6064
- DOI
  10.1109/ted.2021.3119528
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04528, KAKENHI-PROJECT-19H00761
[Journal Article] Observation of 8600 K electron temperature in AlGaN/GaN high electron mobility transistors on Si substrate2016
- Author(s)
  Tomotaka Narita, Yuichi Fujimoto, Akio Wakejima and Takashi Egawa
- Journal Title
  
  Semicond. Sci. Technol.
  
  Volume: 31 Issue: 3 Pages: 035007-035007
- DOI
  10.1088/0268-1242/31/3/035007
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K06014
[Journal Article] Local gate leakage current induced by inhomogeneous epitaxial growth in AlGaN/GaN high-electron-mobility transistors2016
- Author(s)
  Tomotaka Narita, Akio Wakejima and Takashi Egawa
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 9 Issue: 3 Pages: 031002-031002
- DOI
  10.7567/apex.9.031002
- NAID
  210000137805
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K06014
[Presentation] Enhanced gain characteristics of AlGaN/GaN MOS-HEMTs with Al2O3 gate dielectric2021
- Author(s)
  K. Shibata, K. C. Herbert, A. Baratov, J. T. Asubar, A. Wakejima, M. Kuzuhara
- Organizer
  2021 IEEE International Meeting for Future of Electron Devices, Kansai
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00761

1. Kuzuhara Masaaki (20377469)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
2. ASUBAR JOEL (10574220)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
3. 只友一行 (10379927)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

WAKEJIMA Akio 分島 彰男

分島 彰男 ワケジマ アキオ

Wakejima Akio 分島 彰男

Research Projects

Research Products

Co-Researchers

Study on drain current conduction mechanism in high-Al content AlGaN/GaN HEMTs

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study on high-voltage and high-power nitrided-based transistor amplifiers operated at quasi-millimeter wave frequencies

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Identification of Local Current Leakage Location for Mechanism of Leak Current in GaN TransistorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] 1. Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Observation of 8600 K electron temperature in AlGaN/GaN high electron mobility transistors on Si substrate2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Local gate leakage current induced by inhomogeneous epitaxial growth in AlGaN/GaN high-electron-mobility transistors2016

Author(s)

Journal Title

DOI

NAID

Data Source

[Presentation] Enhanced gain characteristics of AlGaN/GaN MOS-HEMTs with Al2O3 gate dielectric2021

Author(s)

Organizer

Data Source

WAKEJIMA Akio 分島彰男

分島彰男ワケジマアキオ

Wakejima Akio 分島彰男