Yamane Keisuke 山根啓輔

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YAMANE Keisuke 山根啓輔

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Researcher Number	80610815
Other IDs
Affiliation (Current)	2025: 豊橋技術科学大学, 工学(系)研究科(研究院), 准教授
Affiliation (based on the past Project Information) *help	2023 – 2024: 豊橋技術科学大学, 工学(系)研究科(研究院), 准教授 2019 – 2021: 豊橋技術科学大学, 工学(系)研究科(研究院), 助教 2014 – 2016: 豊橋技術科学大学, 工学(系)研究科(研究院), 助教 2012 – 2013: 山口大学, 理工学研究科, 助教 2011 – 2012: 山口大学, 大学院・理工学研究科, 助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Medium-sized Section 21:Electrical and electronic engineering and related fields / Crystal engineering / Electronic materials/Electric materials Except Principal Investigator Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials
Keywords	Principal Investigator 第一原理計算 / 結晶成長 / 点欠陥 / 化合物太陽電池 / 希薄窒化物結晶 / GaN基板 / 転位 / 非極性面 / ハイドライド気相成長 / ハフニウム … More / 希薄窒化物半導体 / ウエハ接合 / ヘテロ成長 / 分子線エピタキシー / GaAsPN / 太陽電池 / 結晶欠陥抑制 / 反り / 結晶欠陥 / ＧａＮ基板 / 窒化ガリウム(GaN) / 半極性面 / 窒化物半導体基板 / 窒化ガリウム基板 … More Except Principal Investigator Nonlinear Material / Group-IV Nitride / Reactive Sputtering / Nonlinear Optics / Silicon Photonics / Nitride materials / 研磨 / GaN基板 / 積層欠陥 / サファイア基板 / 転位 / HVPE / MOVPE / 半極性面 / GaN Less

Development of III-IV-V compounds for one-chip infrared analysis systemPrincipal Investigator
- Principal Investigator
  
  山根啓輔
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Toyohashi University of Technology
半導体への放射線照射により発現する超特異現象の解明と宇宙用デバイスへの応用Principal Investigator
- Principal Investigator
  
  山根啓輔
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Toyohashi University of Technology
Novel group-IV nitride films by reactive sputtering as potential nonlinear optical materials in Si photonics
- Principal Investigator
  
  PiedraLorenzana JoseAlberto
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Toyohashi University of Technology
Growth of GaAsPN alloys for flexible efficient photovoltaicsPrincipal Investigator
- Principal Investigator
  
  Yamane Keisuke
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Toyohashi University of Technology
Development of high quality semipolar-GaN substrates by HVPE with improved source-utilization efficiencyPrincipal Investigator
- Principal Investigator
  
  YAMANE KEISUKE
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Toyohashi University of Technology
Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substrate
- Principal Investigator
  
  Tadatomo Kazuyuki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University
Development of low defect density semipolar GaN substrates by hydride vapor phase epitaxyPrincipal Investigator
- Principal Investigator
  
  YAMANE Keisuke
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Yamaguchi University

All 2024 2023 2022 2021 2020 2019 2017 2016 2015 2014 2013 2012 2011 Other

All Journal Article Presentation Patent

[Journal Article] Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing2024
- Author(s)
  Pavelescu E.-M., Ticos D., Ligor O., Romanitan C., Matei A., Comanescu F., Tucureanu V., Spanulescu S.I., Ticos C., Ohshima T., Nakamura T., Imaizumi M., Goldman R.S., Wakahara A., Yamane K.
- Journal Title
  
  Optical Materials
  
  Volume: 149 Pages: 115075-115075
- DOI
  10.1016/j.optmat.2024.115075
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K17746
[Journal Article] Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing2022
- Author(s)
  Yamane Keisuke、Futamura Ryo、Genjo Shigeto、Hamamoto Daiki、Maki Yuito、Pavelescu Emil Mihai、Ohshima Takeshi、Sumita Taishi、Imaizumi Mitsuru、Wakahara Akihiro
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: 2 Pages: 020907-020907
- DOI
  10.35848/1347-4065/ac4a06
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04488
[Journal Article] Growth of phosphide-based type-II stacked quantum dots for III-V/Si photovoltaic applications2021
- Author(s)
  Jose Alberto Piedra Lorenzana, Kesuke Yamane, Akihito Hori and Akihiro Wakahara
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04488
[Journal Article] Alternately double-sided growth of low-curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy2016
- Author(s)
  N. Okada, H. Ihara, K. Yamane, K. Tadatomo
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: 253 Issue: 5 Pages: 819-813
- DOI
  10.1002/pssb.201552783
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26790044
[Journal Article] Growth of Semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate2016
- Author(s)
  Y. Hashimoto, K. Yamane, N. Okada, and K. Tadatomo,
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 253 Issue: 1 Pages: 36-45
- DOI
  10.1002/pssb.201552271
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Growth of Semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate2016
- Author(s)
  Y. Hashimoto, K. Yamane, N.Okada, K. Tadatomo
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: 253 Pages: 36-44
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26790044
[Journal Article] Positional dependence of defect distribution in semipolar (20-21) hydride vapor phase epitaxy-GaN films grown on (22-43) patterned sapphire substrates2016
- Author(s)
  T. Uchiyama, S. Takeuchi, S. Kamada, T. Arauchi, Y. Hashimoto, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, and A. Sakai
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FA07-05FA07
- DOI
  10.7567/jjap.55.05fa07
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Origin of lattice bowing of freestanding GaN substrates grown by HVPE2016
- Author(s)
  K. Yamane, T. Matsubara, T. Yamamoto, N. Okada, A. Wakahara, K. Tadatomo
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 119 Pages: 045707-045711
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26790044
[Journal Article] Positional dependence of defect distribution in semipolar (20-21) HVPE-GaN films grown on (22-43) patterned sapphire substrates2016
- Author(s)
  T. Uchiyama, S. Takeuchi, S. Kamada, T. Arauchi, Y. Hashimoto, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, A. Sakai
- Journal Title
  
  Japanese Journal of Applied Phyisics
  
  Volume: 55
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26790044
[Journal Article] Alternately-double-sided growth of low curvature GaN templates on sapphire substrate using hydride vapor phase epitaxy2015
- Author(s)
  N.Okada, T. Yamamoto, H. Ihara, K. Yamane, K. Tadatomo
- Journal Title
  
  Applied Physics Express
  
  Volume: 未定
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26790044
[Journal Article] Thickness and Growth Condition Dependence of Crystallinity in Semipolar (20-21) GaN Films Grown on (22-43) Patterned Sapphire Substrate2015
- Author(s)
  S. Takeuchi, T. Uchiyama, T. Arauchi, Y. Nakamura, K. Yamane, N. Okada, K. Tadatomo, A. Sakai
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: 未定 Issue: 5 Pages: 1142-1148
- DOI
  10.1002/pssb.201451562
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26790044, KAKENHI-PROJECT-25289088
[Journal Article] Crystalline property analysis of semipolar (20-21) GaN on (22-43) patterned sapphire substrate by X-ray microdiffraction2015
- Author(s)
  T. Arauchi, S. Takeuchi, Y. Nakamura, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, A. Sakai
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: 未定 Issue: 5 Pages: 1149-1154
- DOI
  10.1002/pssb.201451564
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26790044, KAKENHI-PROJECT-25289088
[Journal Article] Fabrication of free standing {20-21} GaN substrates by HVPE using SiO2 masked GaN templates2014
- Author(s)
  K. Yamane, Y. Hashimoto, H. Furuya, T. Inagaki, N. Okada, and K. Tadatomo
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 11 Issue: 3-4 Pages: 401-404
- DOI
  10.1002/pssc.201300484
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Characterization of Structural Defects in Semipolar {20-21} GaN Layers Grown on {22-43} Patterned Sapphire Substrates2014
- Author(s)
  K. Yamane, Y. Hashimoto, H. Furuya, T. Inagaki, N. Okada, and K. Tadatomo,
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 3 Pages: 035502-035502
- DOI
  10.7567/jjap.53.035502
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Evaluation of Heteroepitaxially Grown Semipolar {20-21} GaN on Patterned Sapphire Substrate2014
- Author(s)
  Y. Hashimoto, M. Koyama, T. Inagaki, K. Yamane, N. Okada, K. Tadatomo
- Journal Title
  
  Lecture Notes in Electrical Engineering
  
  Volume: 306 Pages: 23-30
- DOI
  10.1007/978-3-319-05711-8_3
- ISBN
  9783319057101, 9783319057118
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Characterization of Structural Defects in Semipolar {20-21} GaN Layers Grown on {22-43} Patterned Sapphire Substrates2014
- Author(s)
  K. Yamane, Y. Hashimoto, H. Furuya, T. Inagaki, N. Okada, and K. Tadatomo
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289088
[Journal Article] Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxy2013
- Author(s)
  K. Yamane
- Journal Title
  
  Proc. of SPIE
  
  Volume: 8625 Pages: 8625031-7
- DOI
  10.1117/12.2007376
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23860033, KAKENHI-PROJECT-24760012
[Journal Article] Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxy2013
- Author(s)
  K. Yamane, N. Okada, H. Furuya, K. Tadatomo
- Journal Title
  
  Proc. SPIE 8625 (2013)
  
  Volume: 862503-1 Pages: 7-7
- Data Source
  KAKENHI-PROJECT-23860033
[Journal Article] Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy2012
- Author(s)
  K. Yamane
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 9 Pages: 95503-95505
- DOI
  10.1143/apex.5.095503
- NAID
  40019425389
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23860033
[Journal Article] Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates2012
- Author(s)
  K. Yamane
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 358 Pages: 1-4
- DOI
  10.1016/j.jcrysgro.2012.07.038
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23860033
[Journal Article] Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy2012
- Author(s)
  K. Yamane, M. Ueno, K. Uchida, H. Furuya, N. Okada, K. Tadatomo
- Journal Title
  
  Applied Physics Express 5
  
  Volume: 095503. Pages: 3-3
- NAID
  40019425389
- Data Source
  KAKENHI-PROJECT-23860033
[Journal Article] Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates2012
- Author(s)
  K. Yamane, M. Ueno, H. Furuya, N. Okada, K. Tadatomo
- Journal Title
  
  Journal of Crystal Growth 358
  
  Volume: 1 Pages: 4-4
- Data Source
  KAKENHI-PROJECT-23860033
[Patent] 縦型構造半導体の製造方法2023
- Inventor(s)
  山根啓輔, 若原昭浩, 餅田湖, 平井健登, 今泉充, 中村徹哉
- Industrial Property Rights Holder
  山根啓輔, 若原昭浩, 餅田湖, 平井健登, 今泉充, 中村徹哉
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2023-188035
- Filing Date
  2023
- Data Source
  KAKENHI-PROJECT-23K17746
[Patent] 窒化ガリウム結晶自立基板の製造方法2014
- Inventor(s)
  橋本健宏, 古家大士, 只友一行, 岡田成仁, 山根啓輔
- Industrial Property Rights Holder
  国立大学法人山口大学, 株式会社トクヤマ
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-033208
- Filing Date
  2014-02-24
- Data Source
  KAKENHI-PROJECT-25289088
[Patent] 半導体装置の製造方法及びIII-IV族半導体の結晶成長方法2013
- Inventor(s)
  山根啓輔, 只友一行, 岡田成仁
- Industrial Property Rights Holder
  山口大学
- Industrial Property Number
  2013-047175
- Filing Date
  2013-03-08
- Data Source
  KAKENHI-PROJECT-23860033
[Patent] 半導体装置の製造方法及びIII―V族半導体の結晶成長方法2013
- Inventor(s)
  山根啓輔, 只友一行, 岡田成仁
- Industrial Property Rights Holder
  山口大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-047175
- Filing Date
  2013-03-08
- Data Source
  KAKENHI-PROJECT-23860033
[Patent] 自立基板の製造方法2013
- Inventor(s)
  古家大士, 東正信, 只友一行, 岡田成仁, 山根啓輔.
- Industrial Property Rights Holder
  山口大学
- Filing Date
  2013-02-26
- Overseas
- Data Source
  KAKENHI-PROJECT-23860033
[Patent] 窒化ガリウム結晶自立基板およびその製造方法2013
- Inventor(s)
  古家大士, 東正信, 只友一行, 岡田成仁, 山根啓輔
- Industrial Property Rights Holder
  山口大学
- Industrial Property Rights Type
  特許
- Filing Date
  2013-03-13
- Overseas
- Data Source
  KAKENHI-PROJECT-23860033
[Patent] 自立基板の製造方法2013
- Inventor(s)
  古家大士, 東正信, 只友一行, 岡田成仁, 山根啓輔
- Industrial Property Rights Holder
  山口大学
- Industrial Property Rights Type
  特許
- Filing Date
  2013-02-26
- Overseas
- Data Source
  KAKENHI-PROJECT-23860033
[Patent] 窒化ガリウム結晶自立基板の製造方法2013
- Inventor(s)
  橋本健宏, 古家大士, 只友一行, 岡田成仁, 山根啓輔
- Industrial Property Rights Holder
  山口大学、株式会社トクヤマ
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-046913
- Filing Date
  2013-03-08
- Data Source
  KAKENHI-PROJECT-23860033
[Patent] 半導体装置の製造方法2013
- Inventor(s)
  古家大士, 東正信, 只友一行, 岡田成仁, 山根啓輔
- Industrial Property Rights Holder
  山口大学
- Industrial Property Rights Type
  特許
- Filing Date
  2013-02-26
- Overseas
- Data Source
  KAKENHI-PROJECT-23860033
[Patent] 半導体装置の製造方法2012
- Inventor(s)
  只友一行、岡田成仁、山根啓輔、古家大士、東正信
- Industrial Property Rights Holder
  株式会社トクヤマ,国立大学法人山口大学
- Filing Date
  2012-02-27
- Data Source
  KAKENHI-PROJECT-23860033
[Patent] 自立基板の製造方法2012
- Inventor(s)
  古家大士, 東正信, 只友一行, 岡田成仁, 山根啓輔
- Industrial Property Rights Holder
  山口大学・株式会社トクヤマ
- Industrial Property Number
  2012-039485
- Filing Date
  2012-02-27
- Data Source
  KAKENHI-PROJECT-23860033
[Patent] 自立基板の製造方法2012
- Inventor(s)
  只友一行、岡田成仁、山根啓輔、古家大士、東正信
- Industrial Property Rights Holder
  株式会社トクヤマ,国立大学法人山口大学
- Filing Date
  2012-02-27
- Data Source
  KAKENHI-PROJECT-23860033
[Presentation] III-V希薄窒化物混晶の成長過程におけるアンチモンサーファクタント効果2024
- Author(s)
  山根啓輔, 彦坂昌志, 若原昭浩
- Organizer
  第71 回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K17746
[Presentation] GaAsPN太陽電池材料中における窒素起因点欠陥の形成に関する第一原理計算2022
- Author(s)
  中川竜希, 山根啓輔, 大根駿, 若原昭浩
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04488
[Presentation] 陽子線および電子線照射がリン系希薄窒化物太陽電池の光起電力特性に与える効果2022
- Author(s)
  山根啓輔, 大島武, 中村徹哉, 今泉充, 若原昭浩
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04488
[Presentation] 陽子線・電子線照射されたGaAsPN太陽電池の光起電力特性の解析2022
- Author(s)
  平井健登, 山根啓輔, 今泉充, 大島武, 若原昭浩
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04488
[Presentation] GaPN混晶中の空孔型欠陥と窒素起因点欠陥の反応・消滅メカニズムの理論的解析2022
- Author(s)
  大根駿, 山根啓輔, 牧唯人, 若原昭浩
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04488
[Presentation] GaPN混晶でのリン空孔を介した窒素起因点欠陥の消滅に関する理論的解析(2)2021
- Author(s)
  大根駿、山根啓輔、若原昭浩
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04488
[Presentation] Si基板上格子整合系GaAsPN太陽電池の作製(2)2021
- Author(s)
  新井智也、山根啓輔、江湖俊仁、濱本大輝、若原昭浩
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04488
[Presentation] 高効率III-V/Si多接合太陽電池実現に向けたType II InP/GaAsPN量子ドットの設計2020
- Author(s)
  堀礼人, 山根啓輔, Jose A.Piedra-Lorenzana, 若原昭浩
- Organizer
  第3回結晶工学xISYSE合同研究会
- Data Source
  KAKENHI-PROJECT-19K04488
[Presentation] III-V/Siタンデム型太陽電池の実現に向けたGaAsPNサブセルの設計2020
- Author(s)
  江湖俊仁, 山根啓輔, 新井智也, 濱本大輝, 若原昭浩
- Organizer
  第30回日本MRS年次大会
- Data Source
  KAKENHI-PROJECT-19K04488
[Presentation] 希薄窒化物混晶の新規n型ドーパント開拓に向けた窒素－IV族ドーパント結合に関する理論的検討2019
- Author(s)
  牧唯人, 山根啓輔, 若原昭浩
- Organizer
  第2回結晶工学xISYSE合同研究会
- Data Source
  KAKENHI-PROJECT-19K04488
[Presentation] Si基板上格子整合系GaAsPN太陽電池の作製2019
- Author(s)
  高地俊貴, 山根啓輔, 彦坂宗, 若原昭浩
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04488
[Presentation] HVPE-grown GaN substrate with overall low dislocation density and relation between lattice bowing and defects2017
- Author(s)
  N. Okada, K. Yamane, T. Matsubara, S. Goubara, H. Ihara, K. Yukizane, T. Ezaki, S. Fujimoto, R. Inomoto, K. Tadatomo
- Organizer
  12th International Conference on Nitride Semiconductores
- Place of Presentation
  Strasbourg, France
- Year and Date
  2017-07-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] Structural origin of lattice bowing of freestanding GaN substrates grown by hydride vapor phase epitaxy2016
- Author(s)
  K. Yamane, T. Matsubara, N. Okada, A. Wakahara, K. Tadatomo
- Organizer
  European Materials Research Society 2016 Fall Meeting
- Place of Presentation
  Warsaw University of Technology, Warsaw, Poland
- Year and Date
  2016-09-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] Bulk GaN substrate with overall dislocation density in the order of 104-105/cm2 by Hydride Vapor Phase Epitaxy2016
- Author(s)
  S. Goubara, K. Yukizane, N. Arita, T. Matsubara, K. Yamane, R. Inomoto, N. Okada, K. Tadatomo
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Orlando Florida USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] PECVD法により成膜したSiO2マスクの品質がHVPE成長におけるGaNの選択成長に与える影響2015
- Author(s)
  板垣憲広, 河原慎, 山根啓輔, 岡田成仁, 井本良, 本山慎一, 小林貴之, 只友一行
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場, 愛知県名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] X線マイクロ回折法による半極性面(20-21)GaN厚膜の欠陥分布評価2015
- Author(s)
  内山星郎，竹内正太郎，荒内琢士，橋本健宏，山根啓輔，岡田成仁，今井康彦，木村滋，只友一行，酒井朗
- Organizer
  2015年秋季第76回応用物理学会関係連合学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Growth of Semipolar GaN substrates by Hydride Vapor Phase Epitaxy2015
- Author(s)
  K. Tadatomo, T. Inagaki, N. Okada, K. Yamane, Y. Hashimoto, H. Furuya
- Organizer
  The Conference on Lasers and Electro-Optics Pacific Rim 2015 (CLEO-PR2015)
- Place of Presentation
  韓国釜山
- Year and Date
  2015-08-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] ハイドライド気相成長法におけるGaNファセット制御2015
- Author(s)
  河原慎, 井原洋, 傳寶裕晶, 岡田成仁, 山根啓輔, 只友一行
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場, 愛知県名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] 半極性自立GaN基板の作製2015
- Author(s)
  只友一行, 岡田成仁, 山根啓輔, 古家大士, 橋本健宏
- Organizer
  日本結晶成長学会ナノエピ分科会第７回窒化物半導体結晶成長講演会
- Place of Presentation
  東北大学（宮城県仙台市）
- Year and Date
  2015-05-07
- Invited
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Alternately-double-sided growth of low-curvature GaN template on sapphire substrate by hydride vapor phase epitaxy2015
- Author(s)
  N.Okada, T. Yamamoto, H. Ihara, K. Yamane, K. Tadatomo
- Organizer
  11th International Conference on Nitride Semiconductors (ICNS-11)
- Place of Presentation
  中国北京
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] HVPEによるGaN非極性基板作製2015
- Author(s)
  只友一行, 岡田成仁, 山根啓輔
- Organizer
  日本学術振興会第162委員会第94回研究会
- Place of Presentation
  主婦会館（東京都千代田区）
- Year and Date
  2015-07-24
- Invited
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Fabrication of semipolar free standing GaN substrate2015
- Author(s)
  K. Tadatomo, N. Okada, K. Yamane
- Organizer
  German-Japanese-Spanish Joint Workshop
- Place of Presentation
  京都
- Year and Date
  2015-07-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] Positional dependence of defect distribution in semipolar (20-21) HVPE-GaN films grown on (22-43) patterned sapphire substrates2015
- Author(s)
  T. Uchiyama, S. Takeuchi, S. Kamada, T. Arauchi, Y. Hashimoto, K. Yamane, N. Okada, Y. Imai, S. Kimura, K. Tadatomo, A. Sakai
- Organizer
  The 6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  アクトシティ浜松、　静岡県浜松市
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] Fabrication of semipolar free standing GaN Substrate2015
- Author(s)
  K. Tadatomo, N. Okada, and K. Yamane
- Organizer
  German-Japanese-Spanish Joint Workshop on Frontier Photonics and Electronic Materials and Devices 2015
- Place of Presentation
  京都大学芝蘭会館（京都府京都市）
- Year and Date
  2015-07-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] X線マイクロ回折法による半極性面(20-21)GaN厚膜の欠陥分布評価2015
- Author(s)
  内山星郎, 竹内正太郎, 荒内琢士, 橋本健宏, 山根啓輔, 岡田成仁, 今井康彦, 木村滋, 只友一行, 酒井朗
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場, 愛知県名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] Growth of Semipolar GaN Substrates by Hydride Vapor Phase Epitaxy on Patterned Sapphire Substrate2015
- Author(s)
  K. Tadatomo, N. Okada, and K. Yamane
- Organizer
  CLEO-PR 2015
- Place of Presentation
  Busan, Korea
- Year and Date
  2015-08-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] HVPEの成長条件が厚膜{20-21}GaNの結晶性に与える影響2014
- Author(s)
  橋本健宏, 山根啓輔, 岡田成仁, 只友一行
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（相模原市）
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Fabrication of semipolar freestanding GaN substrates2014
- Author(s)
  K.Tadatomo, N. Okada, K. Yamane, H. Furuya, Y. hashimoto
- Organizer
  Summer School of PolarCoN
- Place of Presentation
  Bensheim Germany
- Year and Date
  2014-09-25
- Invited
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] 流量変調法を用いたハイドライド気相成長によるGaNの平坦性の改善2013
- Author(s)
  山根啓輔
- Organizer
  平成25年春季第60回応用物理学会関係連合学術講演会
- Place of Presentation
  神奈川工科大学，神奈川
- Data Source
  KAKENHI-PROJECT-23860033
[Presentation] Evaluation of Heteroepitaxially Grown Semipolar {20-21} GaN on Patterned Sapphire Substrate2013
- Author(s)
  Y. Hashimoto, M. Koyama, T. Inagaki, K. Yamane, N. Okada, and K. Tadatomo
- Organizer
  International Symposium on Optomechatronic Technologies 2013 (ISOT2013)
- Place of Presentation
  Jeju Island, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Fabrication of freestanding {20-21} GaN substrates by HVPE and LED application2013
- Author(s)
  K. Yamane, Y. Hashimoto, N. Okada, K. Tadatomo
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Advancement in future applications with III-Nitrides by fusion technology between epitaxy and prosessing2013
- Author(s)
  K. Tadatomo, N. Okada, K. Yamane, H. Furuya, Y. Hashimoto
- Organizer
  Workshop on Ultra-Precision Processing for III-Nitride (WUPP for III-Nitride)
- Place of Presentation
  Santa Barbara, USA
- Invited
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Improvement in semipolar {11-22} GaN grown by Hydride Vapor Phase Epitaxy2013
- Author(s)
  Y. Hashimoto, H. Furuya, M. Ueno, K. Yamane, N. Okada, ａｎｄ K. Tadatomo
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] サファイア加工基板上非極性面GaN厚膜のハイドライド気相成長2012
- Author(s)
  山根啓輔
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学，東京
- Data Source
  KAKENHI-PROJECT-23860033
[Presentation] Hydride Vapor Phase Epitaxy growth of Semipolar GaN on Patterned Sapphire Substrates2012
- Author(s)
  K. Yamane
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo Convention Center, Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23860033
[Presentation] Behavior of Hydride Vapor Phase Epitaxy-Grown GaN Layers on Sapphire Substrates in Successful Natural Stress-Induced Separation2012
- Author(s)
  K. Yamane, M. Ueno, H. Furuya, N. Okada, K. Tadatomo
- Organizer
  39th International Symposium on Compound Semiconductors
- Place of Presentation
  University of California, California, USA
- Data Source
  KAKENHI-PROJECT-23860033
[Presentation] Fabrication of large freestanding semipolar {11-22} GaN lms using r-plane patterned sapphire substrates2012
- Author(s)
  H. Furuya, K. Yamane, N. Okada, K. Tadatomo
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23860033
[Presentation] ハイドライド気相成長したGaNの熱応力を利用した自発分離2012
- Author(s)
  山根啓輔
- Organizer
  第59回応用物理学会学術講演会
- Place of Presentation
  早稲田大学早稲田キャンパス(東京都)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-23860033
[Presentation] Hydride Vapor Phase Epitaxy growth of Semipolar GaN on Patterned Sapphire Substrates2012
- Author(s)
  K. Yamane, M. Ueno, K. Uchida, H. Furuya, N. Okada, K. Tadatomo
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23860033
[Presentation] n面サファイア加工基板上{10-11}GaNのハイドライド気相成長2011
- Author(s)
  山根啓輔
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス(山形市)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-23860033
[Presentation] ハイドライド気相成長したサファイア加工基板上{10-11}GaNの結晶性評価2011
- Author(s)
  山根啓輔
- Organizer
  結晶工学分科会主催2011年・年末講演会
- Place of Presentation
  学習院創立百周年記念会館(東京都)
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-23860033
[Presentation] Thickness and Growth Condition Dependence of Crystallinity in Semipolar (20-21) GaN Films Grown on (22-43) Patterned Sapphire Substrate
- Author(s)
  T. Uchiyama, S. Takeuchi, T Arauchi, Y. Nakamura, K. Yamane, N. Okada, K. Tadatomo, A. Sakai
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2014)
- Place of Presentation
  WROCŁAW, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] 半極性面GaN基板のHVPE成長とLED応用
- Author(s)
  只友一行, 岡田成仁, 山根啓輔
- Organizer
  第55回真空に関する連合講演会
- Place of Presentation
  大阪府立大学, 大阪
- Year and Date
  2014-11-18 – 2014-11-20
- Invited
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] Crystalline Property Analysis of Semipolar (20-21) GaN on (22-43) Patterned Sapphire Substrate by X-ray Microdiffraction
- Author(s)
  T. Arauchi, S. Takeuchi, Y. Nakamura, Y. Imai, K. Yamane, N. Okada, K. Tadatomo, A. Sakai
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2014)
- Place of Presentation
  WROCŁAW, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] 周期溝加工(22-43)サファイア基板上半極性面(20-21)GaNの微視的結晶構造解析
- Author(s)
  [63]荒内琢士, 竹内正太郎, 橋本健宏, 中村芳明, 今井康彦, 山根啓輔, 岡田成仁, 木村滋, 只友一行, 酒井朗
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] Free standing GaN substrate grown on patterned sapphire substrate
- Author(s)
  K. Tadatomo K. Yamane, N. Okada
- Organizer
  PolarCoN Summer Seminar 2014
- Place of Presentation
  Bensheim, Germany
- Year and Date
  2014-09-24 – 2014-09-26
- Invited
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] Origin of Lattice Bowing of Freestanding GaN Substrates
- Author(s)
  K. Yamane, T. Yamamoto, T. Inagaki, N. Okada, K. Tadatomo
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2014)
- Place of Presentation
  WROCŁAW, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] HVPE成長した半極性{20-21}面と{20-2-1}面GaNの結晶性比較
- Author(s)
  [62]橋本健宏，稲垣卓志, 中尾洸太, 山根啓輔，岡田成仁，只友一行
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] ハイドライド気相成長法を用いた両面成長によるGaNテンプレートの反り低減
- Author(s)
  山本健志, 井原洋, 山根啓輔, 岡田成仁, 只友一行
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学, 神奈川
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26790044
[Presentation] HVPE成長した半極性｛20-21｝面GaNと｛20-2-1｝面GaNの結晶性比較
- Author(s)
  橋本健宏，稲垣卓志，中尾洸太，山根啓輔，岡田成仁，只友一行
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 札幌市, 北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25289088
[Presentation] X線回折法による半極性(20-21)GaN膜の膜厚・成長条件依存性評価
- Author(s)
  内山星郎, 竹内正太郎, 荒内琢士, 橋本健宏, 中村芳明, 山根啓輔, 岡田成仁, 只友一行, 酒井朗
- Organizer
  2014年第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26790044

1. 石川靖彦 (60303541)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
2. Tadatomo Kazuyuki (10379927)

# of Collaborated Projects: 1 results

# of Collaborated Products: 18 results
3. YAMADA Youichi (00251033)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. SAKAI Akira (20314031)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
5. OKADA Narihito (70510684)

# of Collaborated Projects: 1 results

# of Collaborated Products: 18 results
6. PiedraLorenzana JoseAlberto (80909747)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Yamane Keisuke 山根 啓輔

YAMANE Keisuke 山根 啓輔

Research Projects

Research Products

Co-Researchers

Development of III-IV-V compounds for one-chip infrared analysis systemPrincipal Investigator

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半導体への放射線照射により発現する超特異現象の解明と宇宙用デバイスへの応用Principal Investigator

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Novel group-IV nitride films by reactive sputtering as potential nonlinear optical materials in Si photonics

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Growth of GaAsPN alloys for flexible efficient photovoltaicsPrincipal Investigator

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Development of high quality semipolar-GaN substrates by HVPE with improved source-utilization efficiencyPrincipal Investigator

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Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substrate

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Development of low defect density semipolar GaN substrates by hydride vapor phase epitaxyPrincipal Investigator

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[Journal Article] Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing2024

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[Journal Article] Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing2022

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[Journal Article] Growth of phosphide-based type-II stacked quantum dots for III-V/Si photovoltaic applications2021

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[Journal Article] Alternately double-sided growth of low-curvature GaN templates on sapphire substrates using hydride vapor phase epitaxy2016

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DOI

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[Journal Article] Growth of Semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate2016

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[Journal Article] Growth of Semipolar {20-21} GaN and {20-2-1} GaN for GaN substrate2016

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[Journal Article] Positional dependence of defect distribution in semipolar (20-21) hydride vapor phase epitaxy-GaN films grown on (22-43) patterned sapphire substrates2016

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Yamane Keisuke 山根啓輔

YAMANE Keisuke 山根啓輔