JIAO Sai 焦賽

Researcher Number	80710475
Affiliation (based on the past Project Information) *help	2013 – 2015: 東北大学, 電気通信研究所, 教育研究支援者
Review Section/Research Field	Except Principal Investigator Thin film/Surface and interfacial physical properties
Keywords	Except Principal Investigator 表面化学反応 / 転位 / 積層欠陥 / グラフェン / ヘテロエピタキシ / 3C-SiC

Innovative betterment of epitaxial graphene on Si substrate that accelerates realization of graphene electronics
- Principal Investigator
  
  Suemitsu Maki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University

All 2016 2015 2014 Other

All Journal Article Presentation

[Journal Article] Evaluations of crystal defects of 3C-SiC(-1-1-1) film on Si(110) substrate2016
- Author(s)
  Shota Sambonsuge, Shun Ito, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, and Maki Suemitsu
- Journal Title
  
  Phys. Status Solidi A
  
  Volume: 印刷中 Issue: 5 Pages: 1125-1129
- DOI
  10.1002/pssa.201532675
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110)2015
- Author(s)
  Shota Sambonsuge, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, Maki Suemitsu
- Journal Title
  
  Diamond & Related Materials
  
  Volume: 67 Pages: 51-53
- DOI
  10.1016/j.diamond.2016.02.020
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-23000008
[Journal Article] Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact2014
- Author(s)
  Hirokazu Fukidome, Masato Kotsugi, Kosuke Nagashio, Ryo Sato, Takuo Ohkochi, Takashi Itoh, Akira Toriumi, Maki Suemitsu, and Toyohiko Kinoshita
- Journal Title
  
  Scientific Report
  
  Volume: 4 Issue: 9 Pages: 37131-5
- DOI
  10.1088/0022-3727/47/9/094016
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23000008, KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-25600091
[Journal Article] High quality graphene formation on 3C-SiC/4H-AIN/Si heterostructure2014
- Author(s)
  Sai Jiao, Yuya Murakami, Hiroyuki Nagasawa, Hirokazau Fukidome, Isao Makabe, Yasunori Tateno, Takashi Nakabayashi, Maki Suemitsu
- Journal Title
  
  Materials Science Forum
  
  Volume: 806 Pages: 89-93
- DOI
  10.4028/www.scientific.net/msf.806.89
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25286053, KAKENHI-PROJECT-25600091, KAKENHI-PROJECT-23000008
[Presentation] Epitaxial Graphene Formation on 3C-SiC(111)/4H-AlN(0001) Double Layer Stacking on Si(111) Substrates
- Author(s)
  S. Jiao, H. Fukidome, H. Nagasawa, S. Filimonov, M. Tateno, I. Makabe, T. Nakabayashi, and M. Suemitsu
- Organizer
  The International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  宮崎
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Surface Energy Anisotropy of Clean and Hydrodgen Covered 3C-SiC Surfaces
- Author(s)
  S.N. Filimonov, Yu.Yu. Hervieu, S. Jiao, S. Sambonsuge and M. Suemitsu
- Organizer
  ACSIN-12&ICSPM21
- Place of Presentation
  つくば
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] Epitaxial Graphene on Silicon Substrates: Current Status and Perspective
- Author(s)
  Sai JIAO, Maki Suemitsu
- Organizer
  Energy Materials Nanotechnology(EMN) East Workshop
- Place of Presentation
  Beijing, China
- Invited
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] High quality graphene formation on 3C-SiC/4H-AlN/Si heterostructure
- Author(s)
  S. Jiao, Y. Murakami, Y. Tateno, T. Nakabayashi, H. Fukidome, and M. Suemitsu
- Organizer
  HeteroSic-WASMPE2013
- Place of Presentation
  Nice, France
- Data Source
  KAKENHI-PROJECT-25286053
[Presentation] From 3C-SiC growth to graphene formation using 4H-AlN(0001)/Si(111) heterostructure
- Author(s)
  Sai Jiao, Hirokazu Fukidome, Yasunori Tateno, Takashi Nakabayashi and Maki Suemitsu
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-25286053

1. Suemitsu Maki (00134057)

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
2. FUKIDOME Hirokazu (10342841)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
3. NAGASAWA Hiroyuki (60649367)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
4. SUEMITSU Tetsuya

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

JIAO Sai 焦 賽

Research Projects

Research Products

Co-Researchers

Innovative betterment of epitaxial graphene on Si substrate that accelerates realization of graphene electronics

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Evaluations of crystal defects of 3C-SiC(-1-1-1) film on Si(110) substrate2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110)2015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] High quality graphene formation on 3C-SiC/4H-AIN/Si heterostructure2014

Author(s)

Journal Title

DOI

Data Source

[Presentation] Epitaxial Graphene Formation on 3C-SiC(111)/4H-AlN(0001) Double Layer Stacking on Si(111) Substrates

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Surface Energy Anisotropy of Clean and Hydrodgen Covered 3C-SiC Surfaces

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Epitaxial Graphene on Silicon Substrates: Current Status and Perspective

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] High quality graphene formation on 3C-SiC/4H-AlN/Si heterostructure

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] From 3C-SiC growth to graphene formation using 4H-AlN(0001)/Si(111) heterostructure

Author(s)

Organizer

Place of Presentation

Data Source

JIAO Sai 焦賽