Liang Jianbo 梁剣波

Researcher Number	80757013
Affiliation (Current)	2025: 大阪公立大学, 大学院工学研究科 , 准教授
Affiliation (based on the past Project Information) *help	2022 – 2024: 大阪公立大学, 大学院工学研究科, 准教授 2019 – 2021: 大阪市立大学, 大学院工学研究科, 准教授 2018: 大阪市立大学, 大学院工学研究科, 講師
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Basic Section 30010:Crystal engineering-related / Basic Section 21050:Electric and electronic materials-related / Medium-sized Section 30:Applied physics and engineering and related fields
Keywords	Principal Investigator 高温耐熱性 / GaN/ダイヤモンド直接接合 / 構造相転移 / 導電性ダイヤモンド / 直接接合界面 / 耐熱性 / 界面構造 / 結合状態 / ヘテロ構造 / 電流－電圧特性 … More / Si/ダイヤモンドヘテロ接合 / 中間層 / ダイヤモンドの再結晶 / 接合界面構造 / ヘテロ接合 / 高耐熱性 / 直接接合 / Ga2O3 / 放熱問題 / GaN / ダイヤモンド … More Except Principal Investigator シリコン / 表面活性化接合 / 界面熱抵抗 / 熱処理 / 直接接合 / ダイヤモンド / X線回折 / EDX / HAADF-STEM / ダイヤモンド//シリコン接合 / 立方晶SiC中間層 / ダイヤモンド//Si接合界面 / ヘテロエピタキシャル成長 / ダイヤモンド//3C-SiC接合界面 / 耐熱性 / 中間層 / 接合界面 / シリコンカーバイド / 酸化ガリウム / シリコンカーバイド (SiC) / シリコン (Si) / 表面活性化 / 酸化ガリウム (Ga2O3) / 固相固相界面 / Cu / Al / Si / 界面中間層 / 熱処理効果 / ワイドギャップ半導体 Less

Elucidation of structural phase transition from amorphous carbon to diamond at low temperature and low pressure using bonding methodPrincipal Investigator
- Principal Investigator
  
  梁剣波
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Osaka Metropolitan University
Control of nanostructures of directly-bonded Si/diamond interfaces by annealing
- Principal Investigator
  
  重川直輝
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Osaka Metropolitan University
  Osaka City University
Heterojunction formation of conductive diamond and GaN, Ga2O3 for vertical device applicationsPrincipal Investigator
- Principal Investigator
  
  Liang Jianbo
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Osaka Metropolitan University
  Osaka City University
Formation of directly-bonded interface between gallium oxide and group-IV semiconductor for power device application
- Principal Investigator
  
  Higashiwaki Masataka
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute of Information and Communications Technology
Direct bonding of widegap semiconductors and diamond for high-efficiency devices and investigation of bonding interface characteristics
- Principal Investigator
  
  Shigekawa Naoteru
- Project Period (FY)
  2018 – 2019
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Osaka City University

All 2023 2022 2021 2020 2019 2018 Other

All Journal Article Presentation Book Patent Other

[Book] ラマン分光スペクトルデータ解析事例集2022
- Author(s)
  梁　剣波（担当：第７章3節）
- Total Pages
  405
- Publisher
  技術情報協会
- Data Source
  KAKENHI-PROJECT-20K04581
[Journal Article] Electrical properties and energy band alignments of p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding2023
- Author(s)
  Zhenwei Wang, Takahiro Kitada, Daiki Takatsuki, Jianbo Liang, Naoteru Shigekawa, and Masataka Higashiwaki
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 133 Issue: 19
- DOI
  10.1063/5.0128554
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02182
[Journal Article] Fabrication of β-Ga2O3/Si heterointerface and characterization of interfacial structures for high power device applications2022
- Author(s)
  Liang Jianbo、Takatsuki Daiki、Higashiwaki Masataka、Shimizu Yasuo、Ohno Yutaka、Nagai Yasuyoshi、Shigekawa Naoteru
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SF Pages: SF1001-SF1001
- DOI
  10.35848/1347-4065/ac4c6c
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00359, KAKENHI-PROJECT-19H02182
[Journal Article] Electrical properties of Si/diamond heterojunction diodes fabricated by using surface activated bonding2022
- Author(s)
  Uehigashi Yota、Ohmagari Shinya、Umezawa Hitoshi、Yamada Hideaki、Liang Jianbo、Shigekawa Naoteru
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 130 Pages: 109425-109425
- DOI
  10.1016/j.diamond.2022.109425
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04581
[Journal Article] Heterojunctions fabricated by surface activated bonding?dependence of their nanostructural and electrical characteristics on thermal process2022
- Author(s)
  Shigekawa Naoteru、Liang Jianbo、Ohno Yutaka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: 12 Pages: 120101-120101
- DOI
  10.35848/1347-4065/ac993f
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K21083
[Journal Article] Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties2022
- Author(s)
  Zhenwei Wang, Daiki Takatsuki, Jianbo Liang, Takahiro Kitada, Naoteru Shigekawa, and Masataka Higashiwaki
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 131 Issue: 7 Pages: 074501-074501
- DOI
  10.1063/5.0080734
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02182
[Journal Article] ダイヤモンドと異種材料の直接接合による超耐熱マテリアルの開発とその応用について2022
- Author(s)
  梁剣波、重川直輝
- Journal Title
  
  月刊マテリアルステージ
  
  Volume: 3 Pages: 67-70
- Data Source
  KAKENHI-PROJECT-20K04581
[Journal Article] Room-temperature bonding of GaN and diamond via a SiC layer2022
- Author(s)
  Kobayashi Ayaka、Tomiyama Hazuki、Ohno Yutaka、Shimizu Yasuo、Nagai Yasuyoshi、Shigekawa Naoteru、Liang Jianbo
- Journal Title
  
  Functional Diamond
  
  Volume: 2 Issue: 1 Pages: 142-150
- DOI
  10.1080/26941112.2022.2145508
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K21083
[Journal Article] Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding2022
- Author(s)
  Ohno Yutaka、Liang Jianbo、Yoshida Hideto、Shimizu Yasuo、Nagai Yasuyoshi、Shigekawa Naoteru
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SF Pages: SF1006-SF1006
- DOI
  10.35848/1347-4065/ac5d11
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H00359, KAKENHI-PROJECT-23K21083
[Journal Article] Comparison of thermal stabilities of p<sup>+</sup>-Si/p-diamond heterojunction and Al/p-diamond Schottky barrier diodes2022
- Author(s)
  Uehigashi Yota、Ohmagari Shinya、Umezawa Hitoshi、Yamada Hideaki、Liang Jianbo、Shigekawa Naoteru
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SF Pages: SF1009-SF1009
- DOI
  10.35848/1347-4065/ac6480
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04581
[Journal Article] Fabrication of p+-Si/p-diamond heterojunction diodes and effects of thermal annealing on their electrical properties2021
- Author(s)
  Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, and Naoteru Shigekawa
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 120 Pages: 108665-108665
- DOI
  10.1016/j.diamond.2021.108665
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04581
[Journal Article] Fabrication of diamond/Cu direct bonding interface for power device applications2020
- Author(s)
  S. Kanda, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa, and J. Liang
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SB Pages: SBBB03-SBBB03
- DOI
  10.7567/1347-4065/ab4f19
- NAID
  210000157393
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616, KAKENHI-PROJECT-18K19034
[Journal Article] 半導体基板の常温直接接合技術2020
- Author(s)
  重川直輝、梁　剣波
- Journal Title
  
  電子情報通信学会和文論文誌C
  
  Volume: J103-C
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K19034
[Patent] 特許権2023
- Inventor(s)
  重川直輝、梁　剣波
- Industrial Property Rights Holder
  重川直輝、梁　剣波
- Industrial Property Rights Type
  特許
- Filing Date
  2023
- Overseas
- Data Source
  KAKENHI-PROJECT-23K21083
[Patent] 特許権2022
- Inventor(s)
  重川直輝、梁　剣波
- Industrial Property Rights Holder
  重川直輝、梁　剣波
- Industrial Property Rights Type
  特許
- Filing Date
  2022
- Data Source
  KAKENHI-PROJECT-23K21083
[Patent] 特許権2019
- Inventor(s)
  梁剣波、重川直輝
- Industrial Property Rights Holder
  梁剣波、重川直輝
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2019-125039
- Filing Date
  2019
- Data Source
  KAKENHI-PROJECT-18K19034
[Patent] 知的財産権2018
- Inventor(s)
  梁剣波、重川直輝、嘉数誠
- Industrial Property Rights Holder
  梁剣波、重川直輝、嘉数誠
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2018-094186
- Filing Date
  2018
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] n+-Si/p-ダイヤモンドヘテロ接合ダイオードの耐熱性評価2023
- Author(s)
  上東洋太、大曲新矢、梅沢仁、山田英明、梁剣波、重川直輝
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04581
[Presentation] High Performance GaN-on-Diamond Devices Fabrication using Diamond Wafer Bonding Technology2023
- Author(s)
  Jianbo Liang, Yutaka Ohno, Naoteru Shigekawa
- Organizer
  Hasselt Diamond Workshop 2023
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04581
[Presentation] GaN HEMT on-diamond構造の作製及び特性評価2023
- Author(s)
  早川譲稀 , 大野裕 , 永井康介 , 重川直輝 , 梁剣波
- Organizer
  第７０回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04581
[Presentation] Investigation of conduction band offset at n-Si/n-Ga2O3 heterojunction fabricated by surface-activated bonding2022
- Author(s)
  Zhenwei Wang, Daiki Takatsuki, Jianbo Liang, Takahiro Kitada, Naoteru Shigekawa, and Masataka Higashiwaki
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02182
[Presentation] Investigation of capacitance-voltage characteristics of p-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding2022
- Author(s)
  Zhenwei Wang, Daiki Takatsuki, Jianbo Liang, Takahiro Kitada, Naoteru Shigekawa, and Masataka Higashiwaki
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02182
[Presentation] n+-Si/p-ダイヤモンドヘテロ接合ダイオードの作製と電気特性評価2022
- Author(s)
  上東洋太、大曲新矢、梅沢仁、山田英明、梁剣波、重川直輝
- Organizer
  第６９回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04581
[Presentation] Fabrication of High-Thermal-Stability GaN/Diamond Junctions via Intermediate Layers2022
- Author(s)
  Jianbo Liang, Yutaka Ohno, Yasuo Shimizu, Yasuyoshi Nagai and Naoteru Shigekawa
- Organizer
  Conference on Wafer Bonding for Microsystems, 3D- and Wafer Level Integration (WaferBond '22)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K21083
[Presentation] Ga2O3 device technologies: Power switching and high-frequency applications, and beyond2022
- Author(s)
  Masataka Higashiwaki, Takafumi Kamimura, Sandeep Kumar, Zhenwei Wang, Takahiro Kitada, Jianbo Liang, Naoteru Shigekawa, Hisashi Murakami, and Yoshinao Kumagai
- Organizer
  The 5th U.S. Gallium Oxide Workshop (GOX 2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02182
[Presentation] Ga2O3 device physics and engineering for power electronics and new directions2022
- Author(s)
  Masataka Higashiwaki, Takafumi Kamimura, Sandeep Kumar, Zhenwei Wang, Takahiro Kitada, Jianbo Liang, Naoteru Shigekawa, Hisashi Murakami, and Yoshinao Kumagai
- Organizer
  The 15th Asia Pacific Physics Conference (APPC15)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02182
[Presentation] GaN/ダイヤモンド接合界面の特性評価2022
- Author(s)
  梁剣波、清水康雄、大野裕、永井康介、重川直輝
- Organizer
  第６９回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04581
[Presentation] p-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding2022
- Author(s)
  Zhenwei Wang, Daiki Takatsuki, Jianbo Liang, Takahiro Kitada, Naoteru Shigekawa, and Masataka Higashiwaki
- Organizer
  The 4th International Workshop on Gallium Oxide and Related Materials (IWGO-4)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02182
[Presentation] Development of surface-activated bonding technologies to compensate for shortcomings of Ga2O3 devices2022
- Author(s)
  Masataka Higashiwaki, Zhenwei Wang, Takahiro Kitada, Naoki Hatta, Kuniaki Yagi, Jianbo Liang, and Naoteru Shigekawa,
- Organizer
  2022 MRS Spring Meeting and Exhibit
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02182
[Presentation] High Temperature Stability of p+-Si/p-Diamond Heterojunction diodes2021
- Author(s)
  Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Jianbo Liang, and Naoteru Shigekawa
- Organizer
  2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04581
[Presentation] Fabrication and Characterization of GaN/Diamond Boding Interface2021
- Author(s)
  Ayaka Kobayashi, Yasuo Shimizu, Yutaka Ohno, Seong-Woo Kim, Koji Koyama, Makoto Kasu, Yasuyoshi Nagai, Naoteru Shigekawa, and Jianbo Liang
- Organizer
  2021 IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04581
[Presentation] Fabrication of Ga2O3/Si direct bonding interface for high power device applications2021
- Author(s)
  Jianbo Liang, Daiki Takatsuki, Shimizu Yasuo, Masataka Higashiwaki, Yutaka Ohno, Yasuyoshi Nagai, and Naoteru Shigekawa
- Organizer
  The 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02182
[Presentation] Structural analysis of diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature2021
- Author(s)
  Ohno Yutaka、Liang Jianbo、Yoshida Hideto、Shimizu Yasuo、Nagai Yasuyoshi、Shigekawa Naoteru
- Organizer
  2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K21083
[Presentation] Electrical characteristics of n-Ga2O3/n-Si heterojunction formed by surface-activated bonding2021
- Author(s)
  Zhenwei Wang, Daiki Takatsuki, Jianbo Liang, Naoteru Shigekawa, and Masataka Higashiwaki
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02182
[Presentation] GaN/多結晶ダイヤモンド直接接合の作製及び特性評価2020
- Author(s)
  小林礼佳、清水康雄、大野裕、金聖祐、小山浩司、嘉数誠、重川直輝、梁剣波
- Organizer
  2020年第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] ラマン分光法によるGa2O3ショットキーバリアダイオードの自己発熱評価2020
- Author(s)
  万澤欣、高月大輝、林家弘、梁剣波、東脇正高、重川直輝
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02182
[Presentation] Direct bonding of diamond and Cu at room temperature for power device application2019
- Author(s)
  J. Liang, N. Shigekawa
- Organizer
  13th New Diamond and Nano Carbons Conference (NDNC 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] Direct Bonding of GaN and Diamond Without an Intermediate Layer at Room Temperature2019
- Author(s)
  Jianbo Liang, Makoto Kasu, Martin Kuball and Naoteru Shigekawa
- Organizer
  13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] Fabrication of GaAs/diamond direct bonding for high power device applications2019
- Author(s)
  Y. Nakamura, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, M. Kasu, N. Shigekawa, and J. Liang
- Organizer
  13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] 高出力パワーデバイス応用に向けたGaN/Diamond直接接合の作製2019
- Author(s)
  梁剣波、清水康雄、大野裕、白崎謙次、永井康介、嘉数誠、金聖祐、Kuball Martin、重川直輝
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] Fabrication of Diamond/Cu Direct Bonding for Power Device Application2019
- Author(s)
  S. Kanda, S. Masuya, M. Kasu, N. Shigekawa, and J. Liang
- Organizer
  2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] 高出力デバイス応用に向けたGaAs/Diamond直接接合の作製2019
- Author(s)
  中村祐志、桝谷聡士、嘉数誠、重川直輝、梁剣波
- Organizer
  2019年第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] パワーデバイス応用に向けたダイヤモンド/Cu直接接合の形成2019
- Author(s)
  梁剣波、神田進司、桝谷聡士、嘉数誠、重川直輝
- Organizer
  2019年第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] Effect of annealing temperature on diamond/Si interfacial structure2019
- Author(s)
  J. Liang, Y. Zhou, S. Masuya ; F. Gucmann, M. Singh, J. Pomeroy, S. Kim, M. Kuball, M. Kasu, N. Shigekawa
- Organizer
  2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] Interfacial characterization of GaN/diamond heterostructures prepared by room temperature bonding for high power device applications2019
- Author(s)
  J. Liang, Y. Shimizu, Y. Ohno, K. Shirasaki, Y. Nagai, S. Kim, M. Kasu, M. Kuball, and N. Shigekawa
- Organizer
  13th Topical Workshop on Heterostructure Microelectronics (TWHM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] GaAs/Diamond直接接合の界面評価2019
- Author(s)
  中村祐志、清水康雄、大野裕、詹天卓、山下雄一郎、白崎謙次、永井康介、渡邊孝信、嘉数誠、重川直輝、梁剣波
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] Siと接合したダイヤモンド基板上のFETの作製2018
- Author(s)
  神田進司、山條翔二、Martin Kuball、重川直輝、梁剣波
- Organizer
  2018年第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] Room-Temperature Direct Bonding of Diamond to Aluminum2018
- Author(s)
  Jianbo Liang, Shoji Yamajo, Martin Kuball and Naoteru Shigekawa
- Organizer
  New Diamond and Nano Carbons Conference (NDNC 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19034
[Presentation] The combination of Diamond devices with Si LSI by surface activated bonding2018
- Author(s)
  Jianbo Liang, Satoshi Masuya, Seongwoo Kim, Toshiyuki Oishi, Makoto Kasu, and Naoteru Shigekawa
- Organizer
  29th International Conference on Diamond and Carbon Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19034
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1. Shigekawa Naoteru (60583698)

# of Collaborated Projects: 5 results

# of Collaborated Products: 41 results
2. 嘉数誠 (50393731)

# of Collaborated Projects: 2 results

# of Collaborated Products: 12 results
3. 大野裕 (80243129)

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
4. Higashiwaki Masataka (70358927)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
5. SHIMIZU Yasuo

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
6. YOSHIDA Kenta

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
7. 永井康介

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

Liang Jianbo 梁 剣波

Research Projects

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Elucidation of structural phase transition from amorphous carbon to diamond at low temperature and low pressure using bonding methodPrincipal Investigator

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Control of nanostructures of directly-bonded Si/diamond interfaces by annealing

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Heterojunction formation of conductive diamond and GaN, Ga2O3 for vertical device applicationsPrincipal Investigator

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Formation of directly-bonded interface between gallium oxide and group-IV semiconductor for power device application

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Direct bonding of widegap semiconductors and diamond for high-efficiency devices and investigation of bonding interface characteristics

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[Book] ラマン分光スペクトルデータ解析事例集2022

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[Journal Article] Electrical properties and energy band alignments of p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding2023

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[Journal Article] Fabrication of β-Ga2O3/Si heterointerface and characterization of interfacial structures for high power device applications2022

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[Journal Article] Electrical properties of Si/diamond heterojunction diodes fabricated by using surface activated bonding2022

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[Journal Article] Heterojunctions fabricated by surface activated bonding?dependence of their nanostructural and electrical characteristics on thermal process2022

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[Journal Article] Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties2022

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[Journal Article] ダイヤモンドと異種材料の直接接合による超耐熱マテリアルの開発とその応用について2022

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[Journal Article] Room-temperature bonding of GaN and diamond via a SiC layer2022

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[Journal Article] Variation in atomistic structure due to annealing at diamond/silicon heterointerfaces fabricated by surface activated bonding2022

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[Journal Article] Comparison of thermal stabilities of p<sup>+</sup>-Si/p-diamond heterojunction and Al/p-diamond Schottky barrier diodes2022

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Liang Jianbo 梁剣波