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Zhang Kexiong  Zhang Kexiong

ORCIDConnect your ORCID iD *help
Researcher Number 80774463
Affiliation (based on the past Project Information) *help 2020 – 2022: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 産総研特別研究員
2017 – 2018: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 産総研特別研究員
2016: 名古屋工業大学, 工学(系)研究科(研究院), 研究員
Review Section/Research Field
Principal Investigator
Optical engineering, Photon science
Except Principal Investigator
Basic Section 21050:Electric and electronic materials-related
Keywords
Principal Investigator
結晶成長 / 電子・電気材料 / 電子デバイス・機器 / 量子井戸 / エピタキシャル / 2-dimensional hole gas / Semiconductor Device / Polarization Effect / Long Wavelength / tunneling junction … More / polarization / Tunneling Junction / Polarization Engineering / LED / GaN … More
Except Principal Investigator
MOCVD / InGaN / 有機金属化学気相成長法 / 有機金属気相成長法 / 選択成長 / マイクロLED / 窒化物半導体 Less
  • Research Projects

    (2 results)
  • Research Products

    (9 results)
  • Co-Researchers

    (3 People)
  •  Realization of directional micro-LED by bottom-up technique

    • Principal Investigator
      Kumagai Naoto
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
  •  High brightness yellow and red LEDs with p-side down structure by using polarization-induced tunneling junctionPrincipal Investigator

    • Principal Investigator
      Zhang Kexiong
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Optical engineering, Photon science
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
      Nagoya Institute of Technology

All 2019 2018 2017 2016

All Journal Article Presentation

  • [Journal Article] Demonstration of fully vertical GaN-on-Si Schottky diode2017

    • Author(s)
      Zhang K.、Mase S.、Nakamura K.、Hamada T.、Egawa T.
    • Journal Title

      Electronics Letters

      Volume: 53 Issue: 24 Pages: 1610-1611

    • DOI

      10.1049/el.2017.3166

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K17533
  • [Journal Article] The investigation of interfacial chemical state and band alignment in sputter-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy2016

    • Author(s)
      Kexiong Zhang, Meiyong Liao, Masatomo Sumiya, Yasuo Koide, Liwen Sang
    • Journal Title

      Journal of Applied Physics

      Volume: 120 Issue: 18 Pages: 185305-185305

    • DOI

      10.1063/1.4967394

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17533
  • [Journal Article] Electrical hysteresis in p-GaN metal-oxide- semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric2016

    • Author(s)
      Kexiong Zhang, Meiyong Liao, Masataka Imura, Toshihide Nabatame, Akihiko Ohi, Masatomo Sumiya, Yasuo Koide, and Liwen Sang
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 12 Pages: 121002-121002

    • DOI

      10.7567/apex.9.121002

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17533
  • [Journal Article] P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas2016

    • Author(s)
      Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Liwen Sang
    • Journal Title

      Scientific Reports

      Volume: 6 Issue: 1

    • DOI

      10.1038/srep23683

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17533
  • [Presentation] Fabrication of InGaN/GaN Nanopillars byNeutral Beam Etching: Towards Directional Micro-LED in Top-down Structure2019

    • Author(s)
      Kexiong Zhang
    • Organizer
      JSAP 2019 spring meeting
    • Data Source
      KAKENHI-PROJECT-16K17533
  • [Presentation] Nanocolumns of InGaN/GaN MQWs Fabricated by Neutral Beam Etching for Directional Micro-LEDs2018

    • Author(s)
      Kexiong Zhang
    • Organizer
      The International Workshop on Nitride Semiconductors 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17533
  • [Presentation] Nanocolumns of InGaN/GaN MQWs Fabricated by Neutral Beam Etching for Directional Micro-LEDs2018

    • Author(s)
      Kexiong Zhang
    • Organizer
      JSAP 2018 autumn meeting
    • Data Source
      KAKENHI-PROJECT-16K17533
  • [Presentation] InGaN/GaN Heterostructure P-Channel Metal-Oxide-Semiconductor Field Effect Transistor by Using Polarization-Induced Two-Dimensional Hole Gas2016

    • Author(s)
      Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, and Liwen Sang
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Orlando, Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17533
  • [Presentation] The investigation of GaN-based P-Channel Metal-Oxide-Semiconductor Field Effect Transistor2016

    • Author(s)
      Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, and Liwen Sang
    • Organizer
      The international workshop on UV materials and devices (IWUMD-2016)
    • Place of Presentation
      Peking University, Beijing, China.
    • Year and Date
      2016-07-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17533
  • 1.  Kumagai Naoto (40732152)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 2.  王 学論 (80356609)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 3.  山田 寿一 (20358261)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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