Zhang Kexiong Zhang Kexiong

Researcher Number	80774463
Affiliation (based on the past Project Information) *help	2020 – 2022: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 産総研特別研究員 2017 – 2018: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 産総研特別研究員 2016: 名古屋工業大学, 工学(系)研究科(研究院), 研究員
Review Section/Research Field	Principal Investigator Optical engineering, Photon science Except Principal Investigator Basic Section 21050:Electric and electronic materials-related
Keywords	Principal Investigator 結晶成長 / 電子・電気材料 / 電子デバイス・機器 / 量子井戸 / エピタキシャル / 2-dimensional hole gas / Semiconductor Device / Polarization Effect / Long Wavelength / tunneling junction … More / polarization / Tunneling Junction / Polarization Engineering / LED / GaN … More Except Principal Investigator MOCVD / InGaN / 有機金属化学気相成長法 / 有機金属気相成長法 / 選択成長 / マイクロLED / 窒化物半導体 Less

Realization of directional micro-LED by bottom-up technique
- Principal Investigator
  
  Kumagai Naoto
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
High brightness yellow and red LEDs with p-side down structure by using polarization-induced tunneling junctionPrincipal Investigator
- Principal Investigator
  
  Zhang Kexiong
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Optical engineering, Photon science
- Research Institution
  National Institute of Advanced Industrial Science and Technology
  Nagoya Institute of Technology

All 2019 2018 2017 2016

All Journal Article Presentation

[Journal Article] Demonstration of fully vertical GaN-on-Si Schottky diode2017
- Author(s)
  Zhang K.、Mase S.、Nakamura K.、Hamada T.、Egawa T.
- Journal Title
  
  Electronics Letters
  
  Volume: 53 Issue: 24 Pages: 1610-1611
- DOI
  10.1049/el.2017.3166
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K17533
[Journal Article] The investigation of interfacial chemical state and band alignment in sputter-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy2016
- Author(s)
  Kexiong Zhang, Meiyong Liao, Masatomo Sumiya, Yasuo Koide, Liwen Sang
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 120 Issue: 18 Pages: 185305-185305
- DOI
  10.1063/1.4967394
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17533
[Journal Article] Electrical hysteresis in p-GaN metal-oxide- semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric2016
- Author(s)
  Kexiong Zhang, Meiyong Liao, Masataka Imura, Toshihide Nabatame, Akihiko Ohi, Masatomo Sumiya, Yasuo Koide, and Liwen Sang
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 12 Pages: 121002-121002
- DOI
  10.7567/apex.9.121002
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17533
[Journal Article] P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas2016
- Author(s)
  Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Liwen Sang
- Journal Title
  
  Scientific Reports
  
  Volume: 6 Issue: 1
- DOI
  10.1038/srep23683
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17533
[Presentation] Fabrication of InGaN/GaN Nanopillars byNeutral Beam Etching: Towards Directional Micro-LED in Top-down Structure2019
- Author(s)
  Kexiong Zhang
- Organizer
  JSAP 2019 spring meeting
- Data Source
  KAKENHI-PROJECT-16K17533
[Presentation] Nanocolumns of InGaN/GaN MQWs Fabricated by Neutral Beam Etching for Directional Micro-LEDs2018
- Author(s)
  Kexiong Zhang
- Organizer
  The International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17533
[Presentation] Nanocolumns of InGaN/GaN MQWs Fabricated by Neutral Beam Etching for Directional Micro-LEDs2018
- Author(s)
  Kexiong Zhang
- Organizer
  JSAP 2018 autumn meeting
- Data Source
  KAKENHI-PROJECT-16K17533
[Presentation] InGaN/GaN Heterostructure P-Channel Metal-Oxide-Semiconductor Field Effect Transistor by Using Polarization-Induced Two-Dimensional Hole Gas2016
- Author(s)
  Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, and Liwen Sang
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Orlando, Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17533
[Presentation] The investigation of GaN-based P-Channel Metal-Oxide-Semiconductor Field Effect Transistor2016
- Author(s)
  Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, and Liwen Sang
- Organizer
  The international workshop on UV materials and devices (IWUMD-2016)
- Place of Presentation
  Peking University, Beijing, China.
- Year and Date
  2016-07-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17533

1. Kumagai Naoto (40732152)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
2. 王学論 (80356609)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. 山田寿一 (20358261)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Zhang Kexiong Zhang Kexiong

Research Projects

Research Products

Co-Researchers

Realization of directional micro-LED by bottom-up technique

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

High brightness yellow and red LEDs with p-side down structure by using polarization-induced tunneling junctionPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Demonstration of fully vertical GaN-on-Si Schottky diode2017

Author(s)

Journal Title

DOI

Data Source

[Journal Article] The investigation of interfacial chemical state and band alignment in sputter-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Electrical hysteresis in p-GaN metal-oxide- semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric2016

Author(s)

Journal Title

DOI

Data Source

[Journal Article] P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas2016

Author(s)

Journal Title

DOI

Data Source

[Presentation] Fabrication of InGaN/GaN Nanopillars byNeutral Beam Etching: Towards Directional Micro-LED in Top-down Structure2019

Author(s)

Organizer

Data Source

[Presentation] Nanocolumns of InGaN/GaN MQWs Fabricated by Neutral Beam Etching for Directional Micro-LEDs2018

Author(s)

Organizer

Data Source

[Presentation] Nanocolumns of InGaN/GaN MQWs Fabricated by Neutral Beam Etching for Directional Micro-LEDs2018

Author(s)

Organizer

Data Source

[Presentation] InGaN/GaN Heterostructure P-Channel Metal-Oxide-Semiconductor Field Effect Transistor by Using Polarization-Induced Two-Dimensional Hole Gas2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] The investigation of GaN-based P-Channel Metal-Oxide-Semiconductor Field Effect Transistor2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source