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NITTA Shoji  仁田 昌二

ORCIDConnect your ORCID iD *help
… Alternative Names

仁田 昌二  ニツタ シヨウジ

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Researcher Number 90021584
External Links
Affiliation (based on the past Project Information) *help 1998 – 2002: 岐阜大学, 工学部, 教授
1993 – 1994: 岐阜大学, 工学部, 教授
1990: 岐阜大学, 工学部, 教授
1988: 岐阜大学, 工学部, 教授
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering / 電子材料工学 / Applied materials
Except Principal Investigator
Electronic materials/Electric materials / 核・宇宙線・素粒子
Keywords
Principal Investigator
ESR / FSM-16 / TEOS / TICS / PLAS / 光ルミネッセンス / detection of heavy particles / layer-by-layer method / low dielectric constant media / photoconductor … More / oxynitride carbon / carbon nitride / amorphous semiconductors / carbon related materials / 酸素プラズマ / 薄膜 / 光感度 / 重粒子の検出 / レイヤー・バイ・レイヤー法 / 低誘電率媒体 / 光伝導体 / 酸化窒化炭素 / 窒化炭素 / アモルファス半導体 / 炭素系材料 / X-ray small angle scattering / luminescence / C_<70> / C_<60> / quantum size effect / embed / 近視場顕微鏡 / ナノ構造 / フラーレン / メゾ・ポーラス / ゼオライト / X線小角散乱 / ルミネッセンス / C70 / C60 / 量子サイズ効果 / 閉じ込め / a-SiO2 / a-Si3N4+x : H / absorption coefficient / photoluminescence / amorphous silicon a-Si : H / ITO / スパッタ金属 / シミュレーション / 光導波路 / アモルファス・シリコン / a-SiO_2 / a-Si_3N_4:H / 吸収係数 / アモルファスシリコンa-Si:H / 基板回転型グロー放電アモルファス超格子作製装置 / 障壁層の酸化 / 高真空化 / 多重反射 / 井戸層ゆらぎ / アモルファス半導体超格子 / 原子状水素 / 界面欠陥 / aーSiO_2 / aーSi_3N_4 / aーSi:H / 低エネルギ光吸収 / PLAS法 … More
Except Principal Investigator
Coefficient of linear expansion / Microcrystalline silicon / Initial stress / Amorphous lattice relaxzation / Laser optical-lever bending method / Photodegradation / Hydrogenated amorphous silicon / Light-induced expansion / 格子緩和 / 可逆現象 / アモルファス構造変化 / ベンディング法 / 線膨張係数 / 微結晶シリコン / 初期応力 / アモルファス格子緩和 / レーザー光てこベンディング法 / 光劣化 / 水素化アモルファスシリコン / 光誘起膨張 / 測定器開発 / 素粒子実験 / Radiation damage / 放射線検出器 / アモルファスシリコン半導体 Less
  • Research Projects

    (7 results)
  • Co-Researchers

    (7 People)
  •  Preparation and photoconductive application of amorphous carbon nitride semiconductors made by a nitrogen radical sputter methodPrincipal Investigator

    • Principal Investigator
      NITTA Shoji
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Gifu Universay
  •  PREPARATION OF ONE DIMENSIONAL SEMICONDUCTORS C_<60> AND C_<70> IN MESOPOROUS FSM-16, ELECTRONIC PROPERTIES AS NANO-STRUCTURES AND APPLICATIONSPrincipal Investigator

    • Principal Investigator
      NITTA Shoji
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      GIFU UNIVERSITY
  •  The Study of Light-induced Expansion in Hydrogenated Amorphous Silicon with Photodegradation

    • Principal Investigator
      NONOMURA Shuichi
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Gifu University
  •  Studies on the Dynamical Properties of a-Si : H/a-Si3N4+x : H Interfaces by PLAS(Phptoluminescence Absorption Spectroscopy)Principal Investigator

    • Principal Investigator
      NITTA Shoji
    • Project Period (FY)
      1993 – 1994
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Gifu University
  •  PLAS法によるアモルファス半導体超格子の膜面方向の光学的性質の研究Principal Investigator

    • Principal Investigator
      仁田 昌二
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials
    • Research Institution
      Gifu University
  •  荷電粒子検出用高感度アモルファスシリコン半導体の開発

    • Principal Investigator
      田坂 茂樹
    • Project Period (FY)
      1988
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      核・宇宙線・素粒子
    • Research Institution
      Gifu University
  •  アモルファス半導体超格子の電気伝導とその改良Principal Investigator

    • Principal Investigator
      仁田 昌二
    • Project Period (FY)
      1988 – 1989
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Gifu University
  • 1.  NONOMURA Shuichi (80164721)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 2.  ITOH Takashi (00223157)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 3.  田坂 茂樹 (60155059)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  中澤 和馬 (60198059)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  中島 一久 (80164177)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  荻原 千聡 (90233444)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  YOSHIDA Norimitsu (70293545)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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