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SARAIE Junji  更家 淳司

ORCIDConnect your ORCID iD *help
… Alternative Names

更家 淳司  サライエ ジュンジ

SARAIE Junnji  更家 淳司

実家 淳司  サライエ ジュンジ

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Researcher Number 90026154
Other IDs
External Links
Affiliation (based on the past Project Information) *help 1999 – 2000: 京都工芸繊維大学, 工芸学部, 教授
1997: Kyoto Inst.Tech., Faculty of Engneering & Design, Professor, 工芸学部, 教授
1995: 京都工芸繊維大学, 工芸学部, 教授
1988 – 1992: 京都工芸繊維大学, 工芸学部, 教授
1987: Technical College, Kyoto Institute of Technology Professor, 工業短期大学部, 教授
1986: 京工繊大, 大学併設短期大学部, 助教授
Review Section/Research Field
Principal Investigator
電子材料工学 / Applied physics, general
Except Principal Investigator
Applied materials / Applied materials science/Crystal engineering / Electronic materials/Electric materials
Keywords
Principal Investigator
MBE法 / ワイドギャップ材料 / ZnSe / アルキルひ素・燐 / 光CVD / アルミナ膜 / 有機金属原料 / 堆積速度 / ヘテロエピタキシャル成長 / 格子整合 … More / OMーVPE法 / AlN / GaP / ALE法 / 低圧水銀灯 / tandδ / ZnSSe / Nアクセプタ / Liアクセプタ / 光照射MBE成長 / ALE成長 / OMVPE法 / 窒化アルミニウム / 界面準位 / 半導体混晶 / 極微領域ホトルミネセンス像 / 極低温測定 / 極微領域電子構造 / レーザー顕微鏡 / 半導体極微構造 / ピエゾアクチュエータ / 半導体特性マッピング / photoluminescence / high spatial resolution / low temperature / confocal microscope / electronic structure / piezo actuator / photoluminescence image / nano structure / ZnSSe混晶 / GaAs基板 / 窒素ドーピング / 短波長半導体レーザ材料 / ZnSSe mixed crystal / Lattice-matching / GaAs substrate / Nitrogen doping / MBE / 光CVD法 / 誘電損失 / 誘電特性 / 屈折率 / Al_2O_3 films / Photo-CVD method / Deposition rate / Dielectric loss factor … More
Except Principal Investigator
結晶成長 / プラズマCVD / 立方晶SiC / 3C-SiC / ZnSe / 単結晶SiC / 3CーSiC / ヘテロエピタキシ- / 化合物半導体 / VPE法 / MBE法 / AlN / CuGaS_2 / 減圧CVD / エピタキシヤル成長 / 光CVD / 低温成長 / 昇華法 / 結晶多形 / ヘテロ接合 / MOーCVD法 / p型GaN / ヘテロエピタキシャル / SiC on Si / βーSiC / アルミナ膜 / 高量子収率 / SiMIS構造 / GaAsMIS構造 / 低界面準位密度 / 常結晶SiC / ラジカルビ-ム / 原子層エピタキシー / CdSe超格子 / セレン化亜鉛 / 光援助MBE法 / 窒化アルミニウム / MOCVD / アルキルV族OMVPE / AlP / GaP超格子 / バルク成長 / 炭化珪素 / 6H-SiC / 多形制御 / シリコンカーバイド / 近接法 / バクル成長 / エピタキシャル成長 / MO-CVP法 / GaN / ZnS / 混晶半導体 / β-SiC / SiC / Si / Plsama CVD / Photo-CVD, / LPCVD / Cubic sic / Low Temperature Growth / Heteroepitaxy, / Crystal Growth, / 窒化インジウム / シリコン / 分子線エピタキシー / バンドオフセット / 光電子分光法 / 窒化シリコン / 分子線ユピタキシー / 窒化イリジウム / indium nitride / heterojunction / silicon / crystal growth / band-offset / X-ray photoemission spectroscopy / silicon nitride / molecular beam epitaxy Less
  • Research Projects

    (20 results)
  • Co-Researchers

    (14 People)
  •  Fabrication of III-V semiconductor/Si heterojunctions without disturbance of inter-diffusion toward high frequency devices

    • Principal Investigator
      YOSHIMOTO Masahiro
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyoto Institute of Technology
  •  Topographic analyzer for electronic structures of semiconductorsPrincipal Investigator

    • Principal Investigator
      SARAIE Junji, YOSHIMOTO Masahiro
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied physics, general
    • Research Institution
      KYOTO INSTITUTE OF TECHNOLOGY
      Kyoto University
  •  昇華法による立方晶SiCインゴットの単結晶成長

    • Principal Investigator
      西野 茂弘
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto Institute of Technology
  •  結晶成長の原子レベル制御

    • Principal Investigator
      松本 俊
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      University of Yamanashi
  •  バルク状単結晶SiCの育成と結晶多形の制御

    • Principal Investigator
      西野 茂弘
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials
    • Research Institution
      Kyoto Institute of Technology
  •  結晶成長の原子レベル制御Principal Investigator

    • Principal Investigator
      更家 淳司
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto Institute of Technology
  •  光CVD法によるアルミナ絶縁膜の低温堆積の研究

    • Principal Investigator
      松村 信男
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto Institute of Technology
  •  ラジカムビ-ル励起による半導体SiCの結晶成長

    • Principal Investigator
      西野 茂弘
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials
    • Research Institution
      Kyoto Institute of Technology
  •  結晶成長の原子レベル制御Principal Investigator

    • Principal Investigator
      更家 淳司
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto Institute of Technology
  •  単結晶SiCのプラズマCVDにおける励起種の表面反応の研究

    • Principal Investigator
      西野 茂弘
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto Institute of Technology
  •  光CVP法によるアルミナ絶緑膜の低温堆積の研究Principal Investigator

    • Principal Investigator
      更家 淳司
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto Institute of Technology
  •  MBE法による青色発光用格子整合混晶へのアクセプタ添加の研究Principal Investigator

    • Principal Investigator
      更家 淳司
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Kyoto Institute of Technology
  •  化合物半導体薄膜結晶の成長とその制御に関する研究

    • Principal Investigator
      御子柴 宣夫
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Tohoku University
  •  単結晶SiCのプラズマCVDにおける励起種の表面反応の研究

    • Principal Investigator
      NISHINO Shigehiro
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto Institute of Technology
  •  Low Temperature Growth of Semiconductor Sic by Photo-Plasma Double Excitation

    • Principal Investigator
      NISHINO Shigehiro
    • Project Period (FY)
      1989 – 1990
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials
    • Research Institution
      Kyoto Institute of Technology
  •  化合物半導体薄膜結晶の成長とその制御に関する研究

    • Principal Investigator
      御子柴 宣夫
    • Project Period (FY)
      1988
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Tohoku University
  •  単結晶SiCのプラズマCVDにおける励起種の表面反応の研究

    • Principal Investigator
      西野 茂弘
    • Project Period (FY)
      1988
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto Institute of Technology
  •  Low temperature deposition of Al_2O_3 insulating thin films by photo-CVDPrincipal Investigator

    • Principal Investigator
      SARAIE Junji
    • Project Period (FY)
      1988 – 1989
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Kyoto Institute of Technology
  •  短波長発光用II-VI族半導体混晶のMBE成長Principal Investigator

    • Principal Investigator
      更家 淳司
    • Project Period (FY)
      1987
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto Institute of Technology
  •  MBE growth of a semiconductin gmaterial for blue light lasersPrincipal Investigator

    • Principal Investigator
      SARAIE Junji
    • Project Period (FY)
      1986 – 1987
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Kyoto Institute of Technology
  • 1.  MATSUMURA Nobuo (60107357)
    # of Collaborated Projects: 16 results
    # of Collaborated Products: 0 results
  • 2.  NISHINO Shigehiro (30089122)
    # of Collaborated Projects: 12 results
    # of Collaborated Products: 0 results
  • 3.  坪内 和夫 (30006283)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 4.  松本 俊 (00020503)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 5.  YOSHIMOTO Masahiro (20210776)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 6.  御子柴 宣夫 (70006279)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 7.  飯田 誠之 (90126467)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 8.  今井 哲二 (50143714)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 9.  赤崎 勇 (20144115)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 10.  若原 昭浩 (00230912)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 11.  野田 進 (10208358)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 12.  木本 恒暢 (80225078)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 13.  冬木 隆 (10165459)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 14.  松波 弘之 (50026035)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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