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Yamamoto Akio  山本 あき勇

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… Alternative Names

山本 あき勇  ヤマモト アキオ

YAMAMOTO Akio  山本 あき勇

山本 [アキ]勇  ヤマモト アキオ

山本 あき男  ヤマモト アキオ

山本 〓勇  ヤマモト アキオ

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Researcher Number 90210517
Other IDs
External Links
Affiliation (Current) 2025: 福井大学, 学術研究院工学系部門, 客員教授
Affiliation (based on the past Project Information) *help 2018: 福井大学, 学術研究院工学系部門, 特命教授
2017: 福井大学, 工学(系)研究科(研究院), その他
2016: 福井大学, 産学官連携本部, 客員教授
2014: 福井大学, 産学官連携本部, 客員教授
2013: 福井大学, 工学(系)研究科(研究院), 特命教授 … More
2012: 福井大学, 大学院・工学研究科, 教授
2012: 福井大学, 工学(系)研究科(研究院), その他
2011: 福井大学, 工学研究科, 教授
2007 – 2010: University of Fukui, Graduate School ofEngineering, Professor
2006 – 2008: University of Fukui, Department of Electrical and Electronics Engineering, Professor, 工学研究科, 教授
2006: 福井大学, 大学院工学研究科, 教授
2005: 福井大学, 工学部, 教授
2002 – 2003: 福井大学, 工学部, 教授
1994 – 1999: 福井大学, 工学部, 教授
1996 – 1997: 福井大学, 工学部・電子工学科, 教授
1991 – 1992: 福井大学, 工学部, 教授
1990: 福井大学, 工学部, 助教授 Less
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / Electronic materials/Electric materials / Science and Engineering
Except Principal Investigator
Electron device/Electronic equipment / 電子デバイス・機器工学 / Electronic materials/Electric materials / Electronic materials/Electric materials
Keywords
Principal Investigator
GaN / タンデム太陽電池 / GaAs / 窒化インジウム(InN) / InN / 窒化物半導体 / アンモニア / Mg doping / MOVPE / 有機金属気相成長(OMVPE) … More / ヘテロエピタキシャル成長 / シリコン(Si) / キャリア濃度 / InAs / 窒化 / Si / MOCVD / Mgドーピング / 光電変換効率 / Si substrate / two-dimensional electron gas / indium nitride (InN) / III比 / V / 残留キャリア濃度 / N面劣化 / twist / tilt / 電子移動度 / 抵抗率 / CP_2Mg / Si基板 / 二次元電子ガス / Selective area growth / Low temperature growth / Photolysis / Ammonia(NH_3) / ArF excier laser / Indium nitride(InN) / エピタキシー / トリメチルインジウム(TMI) / 光分解 / エキシマレーザ / 光化学反応 / 選択成長 / 低温成長 / 光分解反応 / アンモニア(NH_3) / ArFエキシマレーザ / detection of dislocations / needle-like hillocks / photo-electrochemistry / hole injection / electrochemical etching / 結晶欠陥 / 紫外光照射 / 正孔 / 電流密度-電解電位曲線 / サファイア基板 / 剥離 / 紫外線照射効果 / 陽極溶解反応 / 光電気化学エッチング / 転位 / 貫通転位 / 針状ヒロック / 光電気化学的エッチング / 不均一性 / 電気化学的エッチング / Ga metal / SSD method / ammonia / GaP / Nitridation / GaAs基板 / SSD法 / ウルツ鉱構造 / 閃亜鉛鉱構造 / 金属ガリウム / 合成溶質拡散(SSD)法 / CaAs / バルク結晶 / tandem solar cell / MOCVD growth / heteroepitaxy / nitridation / MOCVD成長 / MOCVD / MOVPE成長 / アンモニア分解触媒 / 触媒 / 窒化インジウム / フォトルミネッセンス / X線ロッキングカーブ半値幅 / 相分離 / SNOM / Raman scattering / Parasitic reaction / Growth pressure / 半導体物性 / 結晶成長 / Pt catalyst / NH3 cracking / hetero-structure / 白金族触媒援用MOVPE / 光起電力 / Cp_2Mg / InAlN/InGaNヘテロ構造 / ヘテロ構造 / InGaN / InAlN / 高効率太陽光発電材料・素子 / ヘテロエピタキシャル成津 … More
Except Principal Investigator
窒化物半導体 / GaN / 耐圧 / トランジスタ / HEMT / 電界効果トランジスタ / 電子デバイス・機器 / 高電子移動度トランジスタ / 基板 / パワーデバイス / 漏れ電流 / 破壊電界 / 半絶縁性 / 抵抗率 / バッファ層 / 半絶縁性基板 / リーク電流 / 絶縁破壊 / on resistance / breakdown voltage / p-type semiconductor / field effect transistor / diode / p-n junction / nitride semiconductor / アニール / 正孔濃度 / 高耐圧 / pnダイオード / オン抵抗 / p形半導体 / ダイオード / pn接合 / Indium Nitride / Gallium Nitride / Indium Gallium Phosphide / Indium Gallium Arsenide / Gallium Arsenide / Photovoltaic Effect / Solar Cell / Quantum Well Structure / 窒化ガリウム / 窒化インジウム / リン化インジウムガリウム / ヒ化インジウムガリウム / ヒ化ガリウム / 光起電力効果 / 太陽電池 / 量子井戸構造 / HIGHLY LATTICE MISMATCHED HETEROEPITAXY / Si / InGaN / III-V NITRIDES / ALTERNATING SOURCE SUPPLY MBE / 格子不整合ヘテロエピタクシー / 格子不整合ヘテロエピタキシ- / シリコン / 窒化インジウムガリウム / III族窒化物半導体 / 交互供給MBE法 / 絶縁膜 / FET / MIS / 電子デバイス・集積回路 / 電子デバイス・電子機器 / 集積回路 / 電子デバイス / A1N単結晶薄膜 / 固相C60薄膜 / AlN単結晶薄膜 / SiC基板 / 炭素系デバイス / グラフェン / 固相C_<60>薄膜 / 電気・電子材料(半導体、誘電体、磁性体、超誘電体、有機物、絶縁体、超伝導体など) / フォトニックバンドギャップ / 非周期性 / 強局在状態 / 光バンドギャップ / メソスコピック光導波路 / 光局在 Less
  • Research Projects

    (17 results)
  • Research Products

    (122 results)
  • Co-Researchers

    (13 People)
  •  Study on lateral breakdown field in GaN-based transistors

    • Principal Investigator
      Kuzuhara Masaaki
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Fukui
  •  Study on MOCVD growth of InN-based semiconductors using NH3 decomposition catalystsPrincipal Investigator

    • Principal Investigator
      YAMAMOTO Akio
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      University of Fukui
  •  Study on High-Temperature and High-Frequency Electronic Devices

    • Principal Investigator
      KUZUHARA Masaaki
    • Project Period (FY)
      2010 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Fukui
  •  Basic Research for Carbon Electronics Devices using Solid C_<60> and/or Graphene

    • Principal Investigator
      HASHIMOTO Akihiro
    • Project Period (FY)
      2007 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      University of Fukui
  •  A research on InAlN-based tandem solar cellsPrincipal Investigator

    • Principal Investigator
      YAMAMOTO Akio
    • Project Period (FY)
      2006 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      University of Fukui
  •  High quality InN grown by MOVPE and its electron transport propertiesPrincipal Investigator

    • Principal Investigator
      YAMAMOTO Akio
    • Project Period (FY)
      2005 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      University of Fukui
  •  High-Voltage GaN p-n Junction Diodes with Low Leakage Current

    • Principal Investigator
      KUZUHARA Masaaki
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Fukui
  •  MOCVD Growth of InN using ArF Excier LaserPrincipal Investigator

    • Principal Investigator
      YAMAMOTO Akio
    • Project Period (FY)
      2002 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      University of Fukui
  •  Photovoltaic Effects of Low-Dimensional Structures

    • Principal Investigator
      YAMAGUCHI Masafumi
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for international Scientific Research
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Toyota Technological Institute
  •  Study on bulk crystal growth for nitide semiconductorsPrincipal Investigator

    • Principal Investigator
      YAMAMOTO Akio
    • Project Period (FY)
      1997 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Fukui University
  •  Study on electrochemical etching of nitride semiconductorsPrincipal Investigator

    • Principal Investigator
      YAMAMOTO Akio
    • Project Period (FY)
      1997 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Fukui University
  •  InGaN CRYSTAL GROWTH ON Si SUBSTRATE BY ALTERNATING SOURCE SUPPLY MBE

    • Principal Investigator
      HASHIMOTO Akihiro
    • Project Period (FY)
      1995 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      FUKUI UNIVERSITY
  •  光の局在領域における電子及び光子の量子相互作用に関する理論的研究

    • Principal Investigator
      大高 眞人
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      University of Fukui
  •  Study on thin-film growth and solar-cell application on InNPrincipal Investigator

    • Principal Investigator
      YAMAMOTO Akio
    • Project Period (FY)
      1994 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Fukui University
  •  InN/Siモノリシックタンデム太陽電池の研究Principal Investigator

    • Principal Investigator
      山本 あき男
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      University of Fukui
  •  InN/Siモノリシックタンデム太陽電池の研究Principal Investigator

    • Principal Investigator
      山本 あき勇
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      University of Fukui
  •  InN/Siモノリシックタンデム太陽電池の研究Principal Investigator

    • Principal Investigator
      山本 〓勇
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      University of Fukui

All 2018 2017 2015 2013 2012 2011 2010 2009 2008 2007 2006 2005 Other

All Journal Article Presentation Book Patent

  • [Book] 日本学術振興会第175委員会監修 小長井、山口、近藤編著「太陽電池の基礎と応用」2010

    • Author(s)
      山本あき勇
    • Total Pages
      484
    • Publisher
      (株)培風館
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Book] 太陽電池の基礎と応用(分担執筆)(日本学術振興会第175委員会監修 小長井 誠・山口真史・近藤道雄 編著)2010

    • Author(s)
      山本あき勇
    • Publisher
      培風館
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article] AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2/Vs)2018

    • Author(s)
      A. Yamamoto, S. Makino, K. Kanatani, and M. Kuzuhara
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 4 Pages: 045502-045502

    • DOI

      10.7567/jjap.57.045502

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Journal Article] Growth temperature dependent critical thickness for phase separation in thick (~1 μm) InxGa1-xN (x = 0.2~0.4)2015

    • Author(s)
      A. Yamamoto, Tanvir Md Hasan, K. Kodama, N. Shigekawa, M. Kuzuhara
    • Journal Title

      Journal of Crystal Growth

      Volume: 419 Pages: 64-68

    • DOI

      10.1016/j.jcrysgro.2015.02.100

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560370
  • [Journal Article] A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate In Compositions Grown on GaN/Sapphire Template and AlN/Si(111) Substrate2013

    • Author(s)
      A. Yamamoto, A. Mihara, Y. Zheng, N. Shigekawa
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 8S Pages: 08JB19-08JB19

    • DOI

      10.7567/jjap.52.08jb19

    • NAID

      210000142613

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560370
  • [Journal Article] Catalyst Temperature Dependence of NH3 Decomposition for InN Grown by Metal Organic Vapor Phase Epitaxy2013

    • Author(s)
      K. Sugita, D. Hironaga, A. Mihara, A. Hashimoto, A. Yamamoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 8S Pages: 08JD04-08JD04

    • DOI

      10.7567/jjap.52.08jd04

    • NAID

      210000142639

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560370
  • [Journal Article] Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures2012

    • Author(s)
      M. Hatano, N. Yafune, H. Tokuda, Y. Yamamoto, S. Hashimoto, K. Akita, and M. Kuzuhara
    • Journal Title

      IEICE Trans. Electron.

      Volume: Vol.E95-C Pages: 1332-1336

    • NAID

      10031126695

    • Data Source
      KAKENHI-PROJECT-22560327
  • [Journal Article] Superconducting Properties of InN with Low Carrier Density near the Mott Transition2012

    • Author(s)
      T.Inushima, S.Kimura, 他6名
    • Journal Title

      Journal of the Physical Society of Japan

      Volume: 81 Issue: 4 Pages: 44704-44704

    • DOI

      10.1143/jpsj.81.044704

    • NAID

      210000109495

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22340107, KAKENHI-PROJECT-22560304, KAKENHI-PROJECT-24560370
  • [Journal Article] MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content2011

    • Author(s)
      K.Sugita, M.Tanaka, K.Sasamoto, A.G.Bhuiyan, A.Hashimoto, A.Yamamoto
    • Journal Title

      J.Cryst.Growth Vol.318

      Pages: 505-508

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article] Platinum-catalyst- assisted metalorganic vapor phase epitaxy of InN2011

    • Author(s)
      K.Sasamoto, K.Sugita, A.Hashimoto, A.Yamamoto
    • Journal Title

      J.Cryst.Growth Vol.314

      Pages: 62-65

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article] Recent Advances in InN-based Solar Cells ; Status and Challenges in InGaN and InAlN Solar Cells2010

    • Author(s)
      A.Yamamoto, Md.R.Islam, T.T.Kang, A.Hashimoto
    • Journal Title

      Phys.Stat.Sol.(c) Vol.7

      Pages: 1309-1316

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article] Recent Advances in InN-based Solar Cells ; Status and Challenges in InGaN and InAiN Solar Cells2010

    • Author(s)
      A.Yamamoto
    • Journal Title

      Physics Status Solidi (c) 7

      Pages: 1309-1316

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article] High Al composition AlGaN-channel high-electron-mobility transistor on AlN substrate2010

    • Author(s)
      H. Tokuda, M. Hatano, N. Yafune, S. Hashimoto, K. Akita, Y. Yamamoto, and M. Kuzuhara
    • Journal Title

      Appl. Phys. Express

      Volume: 3 Pages: 121003-121003

    • NAID

      10027618216

    • Data Source
      KAKENHI-PROJECT-22560327
  • [Journal Article] Elucidation of factors obstructing quality improvement of MOVPE-grown InN2009

    • Author(s)
      A.Yamamoto
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 4636-4640

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article]2009

    • Author(s)
      A. Hashimoto, H. Terasaki, A. Yamamoto, S. Tanaka
    • Journal Title

      Diamond & Related Materials 18

      Pages: 388-391

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article] Electron Beam Irradiation Effect for Solid C_<60> Epitaxy on Graphene2009

    • Author(s)
      Akihiro Hashimoto, Hiromitsu Terasaki, Akio Yamamoto, Satoru Tanaka
    • Journal Title

      Diamond & Related Materials 18

      Pages: 388-391

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article] Raman scattering of In-rich AlxIn1-xN : Unexpected two-mode behavior of A1(LO)2009

    • Author(s)
      T.T.Kang, A.Hashimoto, A.Yamamoto
    • Journal Title

      Phys.Rev.B Vol.79

      Pages: 33301-33301

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article]2009

    • Author(s)
      M. Horie, K. Sugita, A. Hashimoto, A. Yamamoto
    • Journal Title

      Solar Energy Materials and Solar Cells 93

      Pages: 1013-1015

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article] Raman scattering of In-rich Al_xIn_<1-x>N : Unexpected two-mode behavior of A_1(LO)2009

    • Author(s)
      T. T. Kang, A, Hashimoto, A. Yamamoto
    • Journal Title

      Physical revew B 79

      Pages: 33301-33301

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article] MOVPE growth and Mg doping of InxGa1-xN (x-0.4) for solar cell2009

    • Author(s)
      M.Horie, K.Sugita, A.Hashimoto, A.Yamamoto
    • Journal Title

      Solar Energy Materials and solar cells Vol.93

      Pages: 1013-1015

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article]2009

    • Author(s)
      T.T. Kang, M. Yamamoto, M. Tanaka, A. Hashimoto, A. Yamamoto
    • Journal Title

      J. Appl. Phys 106

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article] Elucidation of factors obstructing quality improvement of MOVPE-grown InN2009

    • Author(s)
      A.Yamamoto, K.Sugita, A.Hashimoto
    • Journal Title

      J.Cryst.Growth Vol.311

      Pages: 4636-4640

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article]2009

    • Author(s)
      T.T. Kang, M. Yamamoto, M. Tanaka, A. Hashimoto, A. Yamamoto
    • Journal Title

      Optics Letters 34

      Pages: 2507-2509

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article] Terahertz characterization of semiconductor alloy AlInN : negative imaginary conductivity and its meaning2009

    • Author(s)
      T.T.Kang, M.Yamamoto, M.Tanaka, A.Hashimoto, A.Yamamoto, R.Sudo, A.Noda, D.W.Liu, K.Yamamoto
    • Journal Title

      OPTICSLETTER Vol.34

      Pages: 2507-2509

    • NAID

      120001493899

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article]2009

    • Author(s)
      K. Sugita, A. Hashimoto, A. Yamamoto
    • Journal Title

      Phys. Status Sol 6

      Pages: 389-392

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article] Effect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition2009

    • Author(s)
      T.T.Kang, M.Yamamoto, M.Tanaka, A.Hashimoto, A.Yamamoto
    • Journal Title

      J.Appl.Phys. Vol.106

      Pages: 53525-53525

    • NAID

      120001631795

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article] Mg doping behavior of MOVPE InxGa1-xN (x-0.4)2009

    • Author(s)
      Md.R.Islam, K.Sugita, M.Horie, A.Hashimoto, A.Yamamoto
    • Journal Title

      J.Cryst.Growth Vol.311

      Pages: 2817-2820

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article]2009

    • Author(s)
      K. Sugita, A. Hashimoto, A. Yamamoto
    • Journal Title

      Phys. Status Sol 6

      Pages: 393-396

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article]2009

    • Author(s)
      T.T. Kang, A. Hashimoto, A. Yamamoto
    • Journal Title

      Phys. Rev. B 79

      Pages: 33301-33301

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article]2009

    • Author(s)
      Md. R. Islam, K. Sugita, M. Horie, A. Hashimoto, A. Yamamoto
    • Journal Title

      J. Cryst. Growth 31

      Pages: 2817-2820

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article]2008

    • Author(s)
      A. Yamamoto, K. Sugita, Y. Nagai, A. Hashimoto
    • Journal Title

      Phys. Sta. Sol. 5

      Pages: 1762-1764

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article] Marked improvements in electrical and optical properties for MOVPE InN annealed at a low temperature (300℃) in O_2 atmosphere2008

    • Author(s)
      K. Sugita, Y. Nagai, D. Matsuoka, A. Hashimoto, H. Harima, A. Yamamoto
    • Journal Title

      physica status solidi (c) 5

      Pages: 1765-1767

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Journal Article]2008

    • Author(s)
      T.T. Kang, A. Hashimoto, A. Yamamoto
    • Journal Title

      Applied Physics Letters 92

      Pages: 110902-110902

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article] Etching and optical deterioration of nitrogen-face of wurtzite InN in NH_3 ambient2008

    • Author(s)
      A. Yamamoto
    • Journal Title

      physica status solidi c 5

      Pages: 1762-1764

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article] Two dimensional electron gas in InN-based heterostructures : Effects of spontaneous and piezoelectric polarization2008

    • Author(s)
      Md. Tanvir, Hasan, Ashraful, G. Bhuiyan, A. Yamamoto
    • Journal Title

      Solid-State Electronics 52

      Pages: 134-139

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Journal Article]2008

    • Author(s)
      A. Hashimoto, K. Iwao, A. Yamamoto
    • Journal Title

      Phys. Status Sol. 5

      Pages: 1876-1878

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article]2008

    • Author(s)
      K. Sugita, Y. Nagai, D. Matsuoka, A. Hashimoto, H. Harima, A. Yamamoto
    • Journal Title

      Phys. Status Sol 5

      Pages: 1765-1767

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article] Atmospheric-pressure MOVPE growth of In-rich InAlN2008

    • Author(s)
      Y.Houchin, A.Hashimoto, A.Yamamoto
    • Journal Title

      Phys.Stat.Sol.(c) Vol.5

      Pages: 1571-1574

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article] Atmospheric-pressure MOVPE growth of In-rich InAlN2008

    • Author(s)
      Y. Houchin, A. Hashimoto, A. Yamamoto
    • Journal Title

      physica status solidi (c) 5

      Pages: 1571-1574

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article]2008

    • Author(s)
      K. Iwao, A. Yamamoto, A. Hashimoto
    • Journal Title

      Phys. Status Sol. 5

      Pages: 1771-1773

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article]2008

    • Author(s)
      Y. Houchin, A. Hashimoto, A. Yamamoto
    • Journal Title

      Phys. Status Sol 5

      Pages: 1571-1574

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article] New nitridation technique for mosaicity control in RF-MBE InN growth2008

    • Author(s)
      K.Iwao, A.Yamamoto, A.Hashimoto
    • Journal Title

      Phys.Stat.Sol.(c) Vol.5

      Pages: 1771-1773

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Journal Article]2008

    • Author(s)
      A. Hashimoto, K. Iwao, S. Tanaka, A. Yamamoto
    • Journal Title

      Diamond & Related Materials 17

      Pages: 1622-1624

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article]2007

    • Author(s)
      Y. Nagai, H. Niwa, A. Hashimoto, A. Yamamoto
    • Journal Title

      Phys. Status Sol. 4

      Pages: 2457-2460

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article] Characterization of MOVPE InN films grown on 3_c-SiC/Si(LLL) templates2007

    • Author(s)
      M. S. Cho, N. Sawazaki, K. Sugita, A. Hashimoto, A. Yamamoto, Y. Ito
    • Journal Title

      physica status solidi (c) 4

      Pages: 2441-2444

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Journal Article] High-resolution X-ray diffraction analysis of InN films grown by metalorganic vapor phase epitaxy2007

    • Author(s)
      W. J. Wang, K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, A. Yamamoto
    • Journal Title

      Powder Diffraction 22

      Pages: 219-222

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Journal Article]2007

    • Author(s)
      K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, A. Yamamoto
    • Journal Title

      Phys. Sta. Sol. 4

      Pages: 2461-2464

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article]2007

    • Author(s)
      M.S. Cho, N. Sawazaki, A. Hashimoto, A. Yamamoto
    • Journal Title

      Phys. Status Sol. 4

      Pages: 2441-2444

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article]2007

    • Author(s)
      A. Hashimoto, K. Matsumoto, A. Yamamoto
    • Journal Title

      J. Cryst. Growth 301/302

      Pages: 1021-1024

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article]2007

    • Author(s)
      K. Iwao, A. Yamamoto, A. Hashimoto
    • Journal Title

      Phys. Status Sol. 4

      Pages: 2453-2456

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article] Electrical and optical properties of MOVPE InN doped with Mg using CP_2Mg2007

    • Author(s)
      A. Yamamoto, Y. Nagai, H. Niwa, H. Miwa, A. Hashimoto
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 399-402

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Journal Article]2007

    • Author(s)
      A. Hashimoto, K. Iwao, A. Yamamoto
    • Journal Title

      J. Cryst. Growth 301/302

      Pages: 500-503

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article]2007

    • Author(s)
      W.J. Wang, K. Sugita, Y. Nagai, Y. Houchin, A. Hashi-moto, A. Yamamoto
    • Journal Title

      Powder Diffraction 22

      Pages: 219-222

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article] Electrical and optical properties of MOVPE InN doped with Mg using CP_2Mg2007

    • Author(s)
      A. Yamamoto
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 399-402

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Journal Article] Phys. Status Sol.2007

    • Author(s)
      K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, A. Yamamoto
    • Journal Title

      4

      Pages: 2461-2464

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article]2007

    • Author(s)
      W.J. Wang, Y. Nagai, Y. Houchin, A. Hashimoto, A. Yamamoto
    • Journal Title

      Phys. Status Sol. 4

      Pages: 2415-2418

    • Data Source
      KAKENHI-PROJECT-19360141
  • [Journal Article] A comparative study on MOVPE InN films grown on 3_c-SiC/Si(LLL) and sapphire2006

    • Author(s)
      T. Kobayashi, M. S. Cho, N. Sawazaki, A. Hashimoto, A. Yamamoto, Y. Ito
    • Journal Title

      physica status solidi (a) 203

      Pages: 127-130

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Journal Article] The most possible donor in InN grown by metalorganic vapor-phase epitaxy2006

    • Author(s)
      A.Yamamoto ほか3名
    • Journal Title

      Thin Solid Films 464

      Pages: 74-78

    • Data Source
      KAKENHI-PROJECT-17560278
  • [Journal Article] MOVPE InN on a 3_c-SiC/Si(LLL) template formed by C^+-ion implantation into Si(LLL)2005

    • Author(s)
      A. Yamamoto, T. Kobayashi, T. Yamauchi, M. Sasase, A. Hashimoto, Y. Ito
    • Journal Title

      physica status solidi (c) 2

      Pages: 2281-2284

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Journal Article] MOVPE InN on a 3c-SiC/Si(111)template formed by C^+-ion implantation into Si(111)2005

    • Author(s)
      A. Yamamoto
    • Journal Title

      physica status solidi(c) 2

      Pages: 2281-2284

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Journal Article] Low temperature growth of GaN using catalyst-assisted MOVPE

    • Author(s)
      K.Sasamoto, T.Hotta, M.Tanaka, K.Sugita, A.G.Bhuiyan, A.Hashimoto, A.Yamamoto
    • Journal Title

      Phys.Stat.Sol.(c) in press

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Patent] In系III族元素窒化物の製造方法およびその装置2009

    • Inventor(s)
      山本あき勇, 橋本明弘
    • Industrial Property Rights Holder
      福井大学
    • Industrial Property Number
      2009-077643
    • Filing Date
      2009-03-26
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Patent] In系III族元素窒化物の製造方法及びその装置2009

    • Inventor(s)
      山本あき勇、橋本明弘
    • Industrial Property Rights Holder
      福井大学
    • Industrial Property Number
      2009-077643
    • Filing Date
      2009-03-26
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] Characterization of AlGaN/GaN HEMTs with directly regrown AlGaN barrier layer2017

    • Author(s)
      K. Kanatani, S. Yoshida, A. Yamamoto, and M. Kuzuhara
    • Organizer
      IMFEDK2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Reduction of In incorporation by Si-doping in MOVPE-grown InxGa1-xN (x~0.3)2013

    • Author(s)
      A. Mihara, N. Shigekawa, A. Yamamoto
    • Organizer
      10th International Conference on Nitride Semiconductors
    • Place of Presentation
      Washington DC (USA)
    • Data Source
      KAKENHI-PROJECT-24560370
  • [Presentation] Growth of InN by the conventional, ArF excimer laser-assisted, and Pt catalyst-assisted MOCVD methods2012

    • Author(s)
      Akio Yamamoto and Ken-ichi Sugita
    • Organizer
      Intensive Discussion on Growth of Nitride Semiconductors
    • Place of Presentation
      Sendai, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560370
  • [Presentation] Catalyst temperature (RT-1000ºC) dependence of NH3 decomposition for MOVPE growth of InN2012

    • Author(s)
      K. Sugita, D. Hironaga, A. Mihara, A. Hashimoto, A. Yamamoto
    • Organizer
      International Workshop on Nitride Semiconductors 2012
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-24560370
  • [Presentation] Catalyst-assisted MOVPE growth of InN and GaN2011

    • Author(s)
      A.Yamamoto, K.Sasamoto, K.Sugita, A.Hashimoto
    • Organizer
      European Materials Research Society 2011 Spring Meeting
    • Place of Presentation
      Nice, France(招待講演)
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] High-Temperature RF Characterization of AlGaN-Channel HEMTs2011

    • Author(s)
      M. Hatano, J. Yamazaki, N. Yafune, S. Hashimoto, K. Akita, Y. Yamamoto, and M. Kuzuhara
    • Organizer
      9th Topical Workshop on Heterostructure Microelectronics (TWHM 2011)
    • Place of Presentation
      Gifu
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] RF-MBE法によるHOPG基板上InN成長2010

    • Author(s)
      小竹弘倫, 田畑裕行, 下辻康広, 朴木博則, 山本嵩勇, 橋本明弘
    • Organizer
      2010年春季・第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学、平塚、日本
    • Year and Date
      2010-03-19
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] MOVPE growth of InAlN/InGaN heterostructures with an intermediate In composition range2010

    • Author(s)
      K.Sugita, M.Tanaka, K.Sasamoto, A.G.Bhuiyan, A.Hashimoto, A.Yamamoto
    • Organizer
      16th International Conference on Crystal Growth
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] Growth temperature dependence of Cp_2Mg supply effects on MOVPE InN growth2010

    • Author(s)
      K.Sugita, K.Sasamoto, A.Hashimoto, A.Yamamoto
    • Organizer
      2010 International Workshop on Nitride Semiconductors
    • Place of Presentation
      Tampa, USA
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] Comparative hightemperature DC characterization of HEMTs with GaN and AlGaN channel layers2010

    • Author(s)
      M. Hatano, N. Kunishio, H. Chikaoka, J. Yamazaki, Z. B. Makhzani, N. Yafune, K. Sakuno, S. Hashimoto, K. Akita, Y. Yamamoto, and M. Kuzuhara
    • Organizer
      CS-MANTECH
    • Place of Presentation
      Portland
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] ZnO基板上皿面GaN成長の低温MEEバッファ層による効果2010

    • Author(s)
      下辻康広, 朴木博則, 田畑裕行, 山本嵩勇, 橋本明弘
    • Organizer
      2010年春季・第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学、平塚、日本
    • Year and Date
      2010-03-19
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] Adducts formation in MOCVD growth of InAlN : Growth pressure dependence2009

    • Author(s)
      M.Tanaka, M.Yamamoto, T.T.Kang, A.Hashimoto, A.Yamamoto
    • Organizer
      The 51st TMS Electronic Materials Conference
    • Place of Presentation
      Pennsylvania, USA
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] Characterization of InN grown by Pt catalyst-assisted MOVPE2009

    • Author(s)
      K. Sasamoto, K. Sugita, A. Hashimoto, A. Yamamoto
    • Organizer
      Abstract book of 8th Int'l Conference of Nitride Semiconductors (ICNS8)
    • Place of Presentation
      Jeju, Korea
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] Step-graded Interlayers for the improvement of MOVPE InxGa1-xN (x ~ 0. 4) Epi-layer Quality2009

    • Author(s)
      Md. R. Islam, Y. Ohmura, A. Hashimoto, A. Yamamoto, K. Kinoshita, Y. Koji
    • Organizer
      Abstract book of 8th Int'l Conference of Nitride Semiconductors (ICNS8)
    • Place of Presentation
      Jeju, Korea
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] 招待講演:Recent Advances in InN-based Solar Cells ; Status and Challenges in InGaN and InAiN Solar Cells2009

    • Author(s)
      A.Yamamoto
    • Organizer
      European Materials Research Society 2009 Fall Meeting
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      2009-09-15
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] Gas flow engineering in metalorganic chemical vapor deposition growth of In-rich AlInN2009

    • Author(s)
      M.Yamamoto
    • Organizer
      The 8th International Conference on Nitride Semiconductors (ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-22
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] Pt catalyst-assisted metalorganic vapor phase epitaxy of InN2009

    • Author(s)
      K.Sasamoto, K.Sugita, A.Hashimoto, A.Yamamoto
    • Organizer
      The 51st TMS Electronic Materials Conference
    • Place of Presentation
      Pennsylvania, USA
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] Recent Advances in InN-based Solar Cells2009

    • Author(s)
      A.Yamamoto, Md R.Islam, T.- T.Kang, A.Hashimoto
    • Organizer
      Status and Challenges in InGaN and InAlN Solar Cells, European Materials Research Society 2009 Fall Meeting Warsaw
    • Place of Presentation
      Poland(招待講演)
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] RF-MBE Growth on Vicinal Sapphire Substrate using Migration Enhanced Epitaxy2009

    • Author(s)
      下辻康広, 山本嵩勇, 橋本明弘
    • Organizer
      Abstract book of 8th Int'l Conference of NitrideSemicon ductors (ICNS8), ThP-32
    • Place of Presentation
      ICC Jeju, Korea
    • Year and Date
      2009-10-23
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] RF-MBE Growth on Vicinal Sapphire Substrate using Migration Enhanced Epitaxy2009

    • Author(s)
      M. Yamamoto, Ting-Ting Kang, M. Tanaka, A. Hashimoto, A. Yamamoto
    • Organizer
      Abstract book of 8th Int'l Conference of Nitride Semiconductors (ICNS8)
    • Place of Presentation
      Jeju, Korea
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] Recent advances in MOVPE growth of InN: status and difficulties2008

    • Author(s)
      A. Yamamoto
    • Organizer
      2008 International Symposium on the Physics of Nitride Semiconductors
    • Place of Presentation
      Hsinchu, Taiwan
    • Year and Date
      2008-01-29
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] Direct Measurements of Van der Waals Force in HOPG H. Terasaki2008

    • Author(s)
      A. Yamamoto, T. Honda, A. Hashi-moto
    • Organizer
      Program Book of 2nd Conference on New Diamond & Nano Carbons 2008 (NDNC2008)
    • Place of Presentation
      Taipei, Taiwan
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] Elucidation of obstructing factors in improving MOVPE-grown InN quality2008

    • Author(s)
      A. Yamamoto, K. Sugita, A. Hashimoto
    • Organizer
      International Workshop on Nitride Semiconductors 2008
    • Place of Presentation
      Montreux, Suitzerland
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] Elucidation of obstracting factors in improving MOVPE-grown InN quality2008

    • Author(s)
      A. Yamamoto
    • Organizer
      International Workshop on Nitride Semiconductors 2008
    • Place of Presentation
      Montreux, Switzerland
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] Electron Beam Irradiation Effect for Solid C60 Epitaxy on Graphene2008

    • Author(s)
      A. Hashimoto, H. Terasaki, A. Yamamoto, S. Tanaka
    • Organizer
      Program Book of 2nd Conference on New Diamond & Nano Carbons 2008 (NDNC2008)
    • Place of Presentation
      Taipei, Taiwan
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] Λ study on near-field photoluminescence inhomogeneity in In-rich InAlN2008

    • Author(s)
      T. T. Kang, Y. Houchin, A. Hashimoto, A. Yamamoto
    • Place of Presentation
      Montreux Switzerland
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] A Study of Mg-doping Behaviour of RF-MBE InN using Homo-junction Structure2008

    • Author(s)
      A. Hashi- moto, K. Iwao H. Honoki, A. Yamamoto
    • Organizer
      Abstract Book of 15th Int'l Conference on Molecular Beam Epitaxy (MBE2008)
    • Place of Presentation
      Vancouver, Canada
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] RF-MBE Growth of In-rich InGaN for Tandem Solar Cell2008

    • Author(s)
      A. Hashimoto, K. Iwao H. Hohnoki, A. Yamamoto
    • Organizer
      Abstract Book of 15th Int'l Conference on Molecular Beam Epitaxy (MBE2008)
    • Place of Presentation
      Vancouver, Canada
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] Recent advances in MOVPE growth of InN : status and difficulties2008

    • Author(s)
      A.Yamamoto
    • Organizer
      2008 International Symposium on the Physics of Nitride Semiconductors
    • Place of Presentation
      Hsinchu, Taiwan(招待講演)
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] Status and substrate-related issues for MOVPE InN2007

    • Author(s)
      A. Yamamoto
    • Organizer
      European Materials Research Society 2007 Spring Meeting
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2007-05-29
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Presentation] RF-MBE Growth of In-rich InGaN for Tandem Solar Cell2007

    • Author(s)
      A. Hashimoto, K. Iwao, A. Yamamoto
    • Organizer
      Extended Abstract of 17th Int'l Photovoltaic Science and Engineering Conference (PVSEC-17)
    • Place of Presentation
      Fukuoka, Japan
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] A Trade-off Relation between Tilt and Twist Angle Fluctuations in InN Grown by RF-MBE2007

    • Author(s)
      A. Hashimoto, A. Yamamoto, K. Iwao
    • Organizer
      Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
    • Place of Presentation
      Las Vegas, USA
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] Low-temperature annealing effects of MOVPE InN : Improvement of photoluminescence properties (in Japanese)2007

    • Author(s)
      Y. Nagai, K. Sugita, A. Hashimoto, A. Yamamoto
    • Organizer
      The 54th Spring Meeting of the Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Kanagawa, Japan
    • Year and Date
      2007-03-27
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Presentation] MOVPE GROWTH OF In-RICH InAlN FOR InAlN TANDEM SOLAR CELL2007

    • Author(s)
      Y. Houchin, A. Hashimoto, A. Yamamoto
    • Organizer
      17th Internatoinal Photovoltaic Science and Engineering Conference
    • Year and Date
      2007-12-05
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] Van der Waals Epitaxy of Solid Fullerene on Graphene Sheet2007

    • Author(s)
      A. Hashimoto, K. Iwao, S. Tanaka, A. Yamamoto
    • Organizer
      Abstract book of The 18th Europian Diamond and Related Mterials
    • Place of Presentation
      Berlin
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] Atmospheric-Pressure MOVPE Growth of In-Rich InAlN2007

    • Author(s)
      Y. Houchin, A. Hashimoto, A. Yamamoto
    • Organizer
      Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
    • Place of Presentation
      Las Vegas, USA
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] Mosaicity Control of In-rich InGaN in RF-MBE Growth by Template Technique2007

    • Author(s)
      K. Iwao, Y. Yamada, A. Yamamoto, A. Hashimoto
    • Organizer
      Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
    • Place of Presentation
      Las Vegas, USA
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] MOVPE growth of In-rich InAlN for InAlN tandem solar cell2007

    • Author(s)
      Y.Houchin, A.Hashimoto, A.Yamamoto
    • Organizer
      17th International Photovoltaic Science and Engineering Conference (PVSEC-17)
    • Place of Presentation
      Fukuoka, Japan
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] MOVPE Growth and Mg-doping of InxGa1-xN (x~0. 4) for Tandem Solar Cell2007

    • Author(s)
      M. Horie, A. Hashimoto, A. Yamamoto
    • Organizer
      Extended Abstract of 17th Int'l Photovoltaic Science and Engineering Conference (PVSEC-17)
    • Place of Presentation
      Fukuoka, Japan
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] Marked Improvements in Electrical and Optical Properties for MOVPE InN Annealed at a Low Temperature (~300 C) in O2 Atmosphere2007

    • Author(s)
      Y. Nagai, K. Sugita, A. Hashimoto, A. Yamamoto
    • Organizer
      Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
    • Place of Presentation
      Las Vegas, USA
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] Status and substrate-related issues for MOVPE InN2007

    • Author(s)
      A.Yamamoto, K.Sugita, A.Hashimoto
    • Organizer
      European Materials Research Society 2007 Spring Meeting
    • Place of Presentation
      Strasbourg, France(招待講演)
    • Data Source
      KAKENHI-PLANNED-18069005
  • [Presentation] The Importanve of Reducing Strain for the Improvement of Crystalline Quality of MOVPE InN2007

    • Author(s)
      K. Sugita, A. Hashimoto, A. Yamamoto
    • Organizer
      Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
    • Place of Presentation
      Las Vegas, USA
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] Etching and Optical Deterioration of Nitrogen-Fa Face of Wultzite InN in NH3 Ambient2007

    • Author(s)
      A. Yamamoto, K. Sugita, Y. Nagai, A. Hashimoto
    • Organizer
      Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
    • Place of Presentation
      Las Vegas, USA
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] New Nitridation Technique for Mosaicity Control in RF-MBE InN Growth2007

    • Author(s)
      K. Iwao, A. Yamamoto, A. Hashimoto
    • Organizer
      Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
    • Place of Presentation
      Las Vegas, USA
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] A New Formation Method of Large Area Graphene on SiO2/Si Substrate2007

    • Author(s)
      A. Hashimoto, K. Iwao, S. Tanaka, A. Yamamoto
    • Organizer
      Abstract book of The 18th Europian Diamond and Related Mterials
    • Place of Presentation
      Berlin
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] MOVPE Growth of In-rich InAlN for InAlN Tandem Solar Cell2007

    • Author(s)
      Y. Houchin, A. Hashimoto, A. Yamamoto
    • Organizer
      Extended Abstract of 17th Int'l Photovoltaic Science and Engineering Conference (PVSEC-17)
    • Place of Presentation
      Fukuoka, Japan
    • Data Source
      KAKENHI-PROJECT-19360141
  • [Presentation] Mg-doping of MOVPE InN using CP_2Mg (LL) (in Japanese)2006

    • Author(s)
      Y. Nagai, K. Niwa, H. Miwa, A. Hashimoto, A. Yamamoto
    • Organizer
      The 53th Spring Meeting of the Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2006-03-22
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Presentation] Mg-doping of MOVPE InN using CP_2Mg (L)"(in Japanese)2006

    • Author(s)
      Y. Nagai, K. Niwa, H. Miwa, A. Hashimoto, A. Yamamoto
    • Organizer
      The 53th Spring Meeting of the Japan Society of Applied Physics and Related Societies
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2006-03-22
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Presentation] Adduct Formation of CP_2Mg with NH_3 in MOVPE Growth of Mg-doped InN2006

    • Author(s)
      Y. Nagai, H. Miwa, A. Hashimoto, A. Yamamoto
    • Organizer
      International Workshop on Nitride Semiconductors 2006
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2006-10-22
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Presentation] Crystalline quality of MOVPE InN grown on 3_c-SiC/Si(LLL) substrates(in Japanese)2006

    • Author(s)
      M.S. Cho, N. Sawazaki, K. Sugita, A. Hashimoto, A. Yamamoto, Y. Ito
    • Organizer
      The 67th Fall Meeting of the Japan Society of Applied Physics
    • Place of Presentation
      Kusatsu, Japan
    • Year and Date
      2006-08-29
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Presentation] Electrical and optical properties of MOVPE InN doped with Mg using CP_2Mg2006

    • Author(s)
      A. Yamamoto
    • Organizer
      13th International Conference on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      2006-05-26
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Presentation] Characterization of MOVPE InN films grown on 3_c-SiC/Si(LLL) templates2006

    • Author(s)
      M. S. Cho, N. Sawazaki, K. Sugita, A. Hashimoto, A. Yamamoto, Y. Ito
    • Organizer
      International Workshop on Nitride Semiconductors 2006
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2006-10-22
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Presentation] Metalorganic vapor phase epitaxial (MOVPE) growth of InN2005

    • Author(s)
      A. Yamamoto, H. Miwa, A. Hashimoto
    • Organizer
      INTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS AND THIN FILMS 2005
    • Place of Presentation
      San Diego, USA
    • Year and Date
      2005-05-30
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Presentation] MOVPE growth of high quality InN on 3_c-SiC/Si(LLL) substrates(in Japanese)2005

    • Author(s)
      M.S. Cho, N. Sawazaki, K. Sugita, A. Hashimoto, A. Yamamoto, Y. Ito
    • Organizer
      Technical Reports of the Institute of Electronics, Information and CommunicationEngineers
    • Place of Presentation
      Fukui, Japan
    • Year and Date
      2005-11-13
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Presentation] "Mg-doping effects of MOVPE InN using CP_2Mg" (in Japanese)2005

    • Author(s)
      Y. Nagai, K. Niwa, H. Miwa, A. Hashimoto, A. Yamamoto
    • Organizer
      Technical Reports of the Institute of Electronics, Information and Communication Engineers
    • Place of Presentation
      Fukui, Japan
    • Year and Date
      2005-11-13
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Presentation] "MOVPE growth of high quality InN on Si(LLL) substrates" (in Japanese)2005

    • Author(s)
      M.S. Cho, N. Sawazaki, K. Sugita, A. Hashimoto, A. Yamamoto, Y, Ito
    • Organizer
      The 67th Fall Meeting of the Japan Society of Applied Physics
    • Place of Presentation
      Tokushima, Japan
    • Year and Date
      2005-09-09
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Presentation] Metalorganic vapor phase epitaxial(MOVPE)growth of InN2005

    • Author(s)
      A. Yamamoto
    • Organizer
      INTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS AND THIN FILMS 2005
    • Place of Presentation
      San Diego, USA
    • Year and Date
      2005-05-30
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Presentation] A comparative study on MOVPE InN films grow on 3c-SiC/Si(LLL) and sapphire substrates2005

    • Author(s)
      T. Kobayashi, M. S. Cho, N. Sawazaki, A. Hashimoto, A. Yamamoto, Y. Ito
    • Organizer
      European Materials Research Society 2005 FALL MEETING
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      2005-09-05
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560278
  • [Presentation] アンモニア分解触媒援用MOVPE法によるInNの低温成長

    • Author(s)
      山本あき勇,児玉和樹,野村裕之,葛原正明
    • Organizer
      第7回窒化物半導体結晶成長講演会(プレISGN-6)
    • Place of Presentation
      仙台市
    • Year and Date
      2015-05-07 – 2015-05-08
    • Data Source
      KAKENHI-PROJECT-24560370
  • 1.  HASHIMOTO Akihiro (10251985)
    # of Collaborated Projects: 10 results
    # of Collaborated Products: 86 results
  • 2.  KUZUHARA Masaaki (20377469)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 6 results
  • 3.  FUKUI Kazutoshi (80156752)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 4.  SHIOJIMA Kenji (70432151)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  OHKUBO Mitugu (80260561)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  YAMAGUCHI Masafumi (50268033)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  大高 眞人 (60108248)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  只友 一行 (10379927)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  ASUBAR JOEL (10574220)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  BAMHAM Keith
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  TAKAOKA Hidetoshi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 12.  KEITH Barnha
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 13.  木村 真一
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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