HIROSE Nobumitsu 広瀬信光

… Alternative Names

広瀬信光ヒロセノブミツ

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Researcher Number	90212175
Affiliation (Current)	2025: 国立研究開発法人情報通信研究機構, ネットワーク研究所, 嘱託
Affiliation (based on the past Project Information) *help	2017 – 2021: 国立研究開発法人情報通信研究機構, 未来ICT研究所企画室, エキスパート
Review Section/Research Field	Except Principal Investigator Basic Section 21050:Electric and electronic materials-related / Electron device/Electronic equipment
Keywords	Except Principal Investigator 量子効果デバイス / 半導体 / RTD / ラマン分光法 / 結晶成長 / ヘテロ接合 / スパッタエピタキシー / Sn析出 / Sn拡散 / スパッタエピタキシー法 … More / GeSn / GeSiSn / 電子デバイス・機器 / 共鳴トンネルダイオード / 量子エレクトロニクス / 電子デバイイス・機器 Less

Development of high-frequency devices using GeSiSn/GeSn quantum wells
- Principal Investigator
  
  TSUKAMOTO TAKAHIRO
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  The University of Electro-Communications
High-performance Si/SiGe RTD with fully compressively strained SiGe of high Ge composition ratio formed by sputtering method
- Principal Investigator
  
  Suda Yoshiyuki
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Agriculture and Technology

All 2024 2022 2021 2020 2019 2017

All Journal Article Presentation Patent

[Journal Article] Hole-tunneling S♪i_<0.82>♪G♪e_<0.18>♪/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/c♪m^2♪ fabricated by sputter epitaxy2024
- Author(s)
  Yoshiyuki Suda, Nobumitsu Hirose, Takahiro Tsukamoto, Minoru Wakiya, Ayaka Shinkawa, Akifumi Kasamatsu, Toshiaki Matsui
- Journal Title
  
  Applied Physics Letters
  
  Volume: 124 Issue: 9
- DOI
  10.1063/5.0180934
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03245
[Journal Article] Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy2021
- Author(s)
  Tsukamoto Takahiro、Hirose Nobumitsu、Kasamatsu Akifumi、Matsui Toshiaki、Suda Yoshiyuki
- Journal Title
  
  Thin Solid Films
  
  Volume: 726 Pages: 138646-138646
- DOI
  10.1016/j.tsf.2021.138646
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04487
[Journal Article] Direct Growth of Patterned Ge on Insulators Using Graphene2021
- Author(s)
  Tsukamoto Takahiro、Hirose Nobumitsu、Kasamatsu Akifumi、Matsui Toshiaki、Suda Yoshiyuki
- Journal Title
  
  The Journal of Physical Chemistry C
  
  Volume: 125 Issue: 25 Pages: 14117-14121
- DOI
  10.1021/acs.jpcc.1c03567
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04487
[Journal Article] Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth2020
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Journal Title
  
  Electronic Materials Letters
  
  Volume: 16 Issue: 1 Pages: 9-13
- DOI
  10.1007/s13391-019-00179-y
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03245, KAKENHI-PROJECT-19K04487
[Journal Article] Increase in Current Density at Metal/GeO2/n-Ge Structure by Using Laminated Electrode2020
- Author(s)
  Tsukamoto Takahiro、Kurihara Shota、Hirose Nobumitsu、Kasamatsu Akifumi、Matsui Toshiaki、Suda Yoshiyuki
- Journal Title
  
  Electronic Materials Letters
  
  Volume: 16 Issue: 1 Pages: 41-46
- DOI
  10.1007/s13391-019-00185-0
- Data Source
  KAKENHI-PROJECT-19K04487
[Patent] Manufacturing Method for Semiconductor Laminated Film, and Semiconductor Laminated Film2022
- Inventor(s)
  須田良幸、塚本貴広、本橋叡、出蔵恭平、大久保克己、八木拓馬、笠松章史、広瀬信光、松井敏明
- Industrial Property Rights Holder
  東京農工大学、情報通信研究機構
- Industrial Property Rights Type
  特許
- Acquisition Date
  2022
- Overseas
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] スパッタエピタキシー法により作製したGe/GeSnヘテロ構造におけるSn拡散2022
- Author(s)
  塚本貴広, 池野憲人, 広瀬信光, 笠松章史, 松井敏明, 須田良幸
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04487
[Presentation] グラフェンを用いた絶縁膜上におけるGe選択形成技術2021
- Author(s)
  塚本貴広，広瀬信光，笠松章史，松井敏明，須田良幸
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04487
[Presentation] Direct growth of patterned Ge on insulators using graphene2021
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  ISSS-9
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04487
[Presentation] スパッタエピキシー法を用いた Ge/GeSiSnヘテロ構造形成2020
- Author(s)
  塚本貴広，広瀬信光，笠松章史，松井敏明，須田良幸
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] スパッタエピタキシー法を用いたGe/GeSiSnヘテロ構造形成2020
- Author(s)
  塚本貴広，広瀬信光，笠松章史，松井敏明，須田良幸
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04487
[Presentation] Lattice-matched GeSiSn/Ge double-barrier resonant tunneling diodes2019
- Author(s)
  Takahiro Tsukamoto, Minoru Wakiya, Kazuaki Haneda, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  E-MRS Conference Fall meeting 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] Lattice-matched GeSiSn/Ge double-barrier resonant tunneling diodes2019
- Author(s)
  Takahiro Tsukamoto, Shota Kurihara, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  The 17th E-MRS Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04487
[Presentation] スパッタエピタキシー法を&用いたSiGe HEMTの製造技術と特性制御2019
- Author(s)
  青柳耀介、本橋叡、出蔵恭平、大久保克己、広瀬信光、笠松章史、松井敏明、塚本貴広、須田良幸
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] スパッタエピタキシー法を用いた完全圧縮歪SiGe薄膜形成技術2019
- Author(s)
  野崎翔太、青柳耀介、広瀬信光、笠松章史、松井敏明、須田良幸
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] Epitaxial growth of GeSn and GeSiSn by sputter epitaxy method2017
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  Energy Materials Nanotechnology Meeting on Epitaxy
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] Formation of Lattice-Matched GeSiSn/Ge Quantum Well Structure by Sputter Epitaxy2017
- Author(s)
  Takahiro Tsukamoto, Kazuaki Haneda, Hiroto Iwamori, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  2017 Material Research Society Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03245
[Presentation] Effects of low-temperature GeSn buffer layer on Sn surface segregation during GeSn epitaxial growth2017
- Author(s)
  Takahiro Tsukamoto, Nobumitsu Hirose, Akifumi Kasamatsu, Toshiaki Matsui, Yoshiyuki Suda
- Organizer
  10th. International Conference On Silicon Epitaxy and Heterostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03245

1. Suda Yoshiyuki (10226582)

# of Collaborated Projects: 2 results

# of Collaborated Products: 17 results
2. TSUKAMOTO TAKAHIRO (50640942)

# of Collaborated Projects: 2 results

# of Collaborated Products: 16 results

HIROSE Nobumitsu 広瀬 信光

広瀬 信光 ヒロセ ノブミツ

Research Projects

Research Products

Co-Researchers

Development of high-frequency devices using GeSiSn/GeSn quantum wells

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

High-performance Si/SiGe RTD with fully compressively strained SiGe of high Ge composition ratio formed by sputtering method

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Hole-tunneling S♪i_<0.82>♪G♪e_<0.18>♪/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/c♪m^2♪ fabricated by sputter epitaxy2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Direct Growth of Patterned Ge on Insulators Using Graphene2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Increase in Current Density at Metal/GeO2/n-Ge Structure by Using Laminated Electrode2020

Author(s)

Journal Title

DOI

Data Source

[Patent] Manufacturing Method for Semiconductor Laminated Film, and Semiconductor Laminated Film2022

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Acquisition Date

Data Source

[Presentation] スパッタエピタキシー法により作製したGe/GeSnヘテロ構造におけるSn拡散2022

Author(s)

Organizer

Data Source

[Presentation] グラフェンを用いた絶縁膜上におけるGe選択形成技術2021

Author(s)

Organizer

Data Source

[Presentation] Direct growth of patterned Ge on insulators using graphene2021

Author(s)

Organizer

Data Source

[Presentation] スパッタエピキシー法を用いた Ge/GeSiSnヘテロ構造形成2020

Author(s)

Organizer

Data Source

[Presentation] スパッタエピタキシー法を用いたGe/GeSiSnヘテロ構造形成2020

Author(s)

Organizer

Data Source

[Presentation] Lattice-matched GeSiSn/Ge double-barrier resonant tunneling diodes2019

Author(s)

Organizer

Data Source

[Presentation] Lattice-matched GeSiSn/Ge double-barrier resonant tunneling diodes2019

Author(s)

Organizer

Data Source

[Presentation] スパッタエピタキシー法を&用いたSiGe HEMTの製造技術と特性制御2019

Author(s)

Organizer

Data Source

HIROSE Nobumitsu 広瀬信光

広瀬信光ヒロセノブミツ