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Shimomura Kazuhiko  下村 和彦

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… Alternative Names

SHIMOMURA Kazuhiko  下村 和彦

下村 和彦  シモムラ カズヒコ

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Researcher Number 90222041
Other IDs
External Links
Affiliation (Current) 2025: 上智大学, 理工学部, 教授
Affiliation (based on the past Project Information) *help 2015 – 2023: 上智大学, 理工学部, 教授
2008 – 2013: Sophia University, 理工学部, 教授
2002 – 2006: Sophia University, Faculty of Science and Technology Dept. Electrical and Electronics Engineering, Professor, 理工学部, 教授
2001: 上智大学, 理工学部, 助教授
2000: 上智大, 理工学部, 助教授
1997 – 1998: 上智大学, 理工学部, 助教授
1995: 上智大学, 理工学部, 助教授
Review Section/Research Field
Principal Investigator
Electron device/Electronic equipment / Electronic materials/Electric materials / Basic Section 21060:Electron device and electronic equipment-related / Science and Engineering
Except Principal Investigator
Electron device/Electronic equipment
Keywords
Principal Investigator
有機金属気相成長 / 量子ドット / InP / 選択成長 / 光スイッチ / 集積化技術 / 半導体レーザ / シリコンフォトニクス / MOVPE / 自己組織化 … More / InP基板 / アレイ導波路 / 量子井戸構造 / InAs / Selective Area Growth / InAs Quantum Dots / Low Dimensional Quantum Well / 低次元量子井戸構造 / 光デバイス / 有機金属気相成長法 / 屈折率変化 / 光偏向器 / 集積化 / 集積技術 / 直接貼付 / シリコン / 変調器 / Refractive Index Change / InP Substrate / Self-Organized / Wavelength Switching / 光クロスコネクト / 波長スイッチング / InAs量子ドット / Mach-Zehnder / All optical switch / Stranski-Krastanow / Self-assembled / InP substrate / Quantum dots / 二モード干渉型 / マッハツェンダー干渉型 / 全光スイッチ / Stranski-Krastanow成長 / Nonlinear Optical Effect / Self-Assembled / Wavelength Converter / 半導体光増幅器 / 並列導波路 / 非線形効果 / Stranski-Kranstanowモード / 波長変換 / 非線形光学効果 / InAsドット / 波長変換器 / 広帯域光通信 / 光増幅器 / 波長スイッチ / 光回路 / 多モード干渉導波路 / 波長分割 / 量子井戸 / 波長多重通信 / 波長分波器 / 多重量子井戸構造 / GaInAs / 四光波混合 / 半導体増幅器 / 有限差分法 / FFT / ビーム伝搬法 / 並列処理 / 半導体 … More
Except Principal Investigator
国際研究者交流(ドイツ) / 国際情報交換(ドイツ) / ドイツ / 国際情報交換 / 電子デバイス・機器 / 化合物半導体 / ナノワイヤ / 半導体超微細化 / 集積回路 / 先端機能デバイス Less
  • Research Projects

    (13 results)
  • Research Products

    (336 results)
  • Co-Researchers

    (2 People)
  •  Fabrication of optical transceiver using hybrid silicon integrated circuitsPrincipal Investigator

    • Principal Investigator
      Shimomura Kazuhiko
    • Project Period (FY)
      2021 – 2023
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Sophia University
  •  Hybrid integration technique on silicon platform and crystal growth on InP/Si bonding substratePrincipal Investigator

    • Principal Investigator
      Shimomura Kazuhiko
    • Project Period (FY)
      2018 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Sophia University
  •  Integration of III-V quatum dots laser on silicon photonic circuitsPrincipal Investigator

    • Principal Investigator
      SHIMOMURA Kazuhiko
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Sophia University
  •  Broadband optical devices using QDs array waveguidesPrincipal Investigator

    • Principal Investigator
      SHIMOMURA Kazuhiko
    • Project Period (FY)
      2011 – 2013
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Sophia University
  •  Ultra-High Speed Analog/Digital Integrated Circuits Using InAs Nanowires

    • Principal Investigator
      WAHO Takao
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Sophia University
  •  Reconfigurable optical add/drop multiplexer with a function of optical reamplification, retiming and reshapingPrincipal Investigator

    • Principal Investigator
      SHIMOMURA Kazuhiko
    • Project Period (FY)
      2008 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Sophia University
  •  New Functional Optical Cross Connect using Quantum Dots StructurePrincipal Investigator

    • Principal Investigator
      SHINOMURA Kazuhiko
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Sophia University
  •  Study of all optical switch using quantum dots structurePrincipal Investigator

    • Principal Investigator
      SHIMOMURA Kazuhiko
    • Project Period (FY)
      2003 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Sophia University
  •  半導体光偏向器の波長分割光スイッチへの応用に関する研究Principal Investigator

    • Principal Investigator
      下村 和彦
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Sophia University
  •  Study of Wide Bandwidth All Optical Wavelength Converter using Low Dimensional Quantum Well StructurePrincipal Investigator

    • Principal Investigator
      SHIMOMURA Kazuhiko
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Sophia University
  •  低次元量子井戸構造を用いた超並列光導波路の作製と全光交換器への応用に関する研究Principal Investigator

    • Principal Investigator
      下村 和彦
    • Project Period (FY)
      2000
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Sophia University
  •  自己組織化低次元量子井戸構造の作製と波長変換素子への応用に関する研究Principal Investigator

    • Principal Investigator
      下村 和彦
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Sophia University
  •  半導体面型光偏向素子に関する基礎研究Principal Investigator

    • Principal Investigator
      下村 和彦
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Sophia University

All 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 Other

All Journal Article Presentation Book

  • [Book] 次世代高速通信に対応する光回路実装、デバイスの開発2022

    • Author(s)
      下村 和彦、並木 周、小田 拓弥、村上 雅之、辻川 恭三、佐藤 昭、乗木 暁博、村田 博司、冨木 政宏、那須 秀行、牧 英之、梶 貴博、庄司 雄哉、岡田 修司、松本 怜典、平山 智之、神野 正彦、鈴木 浩文、磯野 秀樹、平尾 朋三 他
    • Total Pages
      628
    • Publisher
      技術情報協会
    • ISBN
      9784861049019
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Book] 量子ドット材料の技術と応用展開2017

    • Author(s)
      長谷川雅樹, 村瀬至生, 福田武司, 中村彰一, 伊藤義文, 小俣孝久, 磯由樹, 磯部徹彦, 森良平, 杉本泰, 藤井稔, 立間徹, 北原洋明, 齋藤健一, 大庭英樹, 下村和彦, 岡田至崇
    • Total Pages
      210
    • Publisher
      株式会社 情報機構
    • ISBN
      9784865021349
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Book] 「量子ドットエレクトロニクスの最前線」第2章第5節分担2011

    • Author(s)
      下村和彦
    • Publisher
      株式会社エヌ・ティー・エス
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Book] 量子ドットエレクトロニクスの最前線(第2章第5節)2011

    • Author(s)
      下村和彦
    • Publisher
      株式会社エヌ・ティー・エス
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Journal Article] Gain coefficient comparison between Silicon and InP laser diode substrate2024

    • Author(s)
      G.K. Periyanayagam and K. Shimomura
    • Journal Title

      Physica Status Solidi A

      Volume: 2300677 Issue: 9

    • DOI

      10.1002/pssa.202300677

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Journal Article] Numerical analysis and lasing characteristics of GaInAsP double heterostructure lasers on InP/Si substrate2022

    • Author(s)
      G.K. Perlyanayagam and K. Shimomura
    • Journal Title

      J. Electronic Materials

      Volume: 51 Issue: 9 Pages: 5110-5119

    • DOI

      10.1007/s11664-022-09737-x

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Journal Article] Characteristics of multi-quantum-well laser diodes with surface electrode structure directly bonded to InP template on SiO2/Si substrate2021

    • Author(s)
      X. Han, K. Tsushima, T. Shirai, T. Ishizaki, and K. Shimomura
    • Journal Title

      Physica Status Solidi A

      Volume: 218 Issue: 10 Pages: 20007671-6

    • DOI

      10.1002/pssa.202000767

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18H01503, KAKENHI-PROJECT-21K04199
  • [Journal Article] MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly- bonded InP/Si substrate2019

    • Author(s)
      H. Sugiyama, K. Uchida, X. Han, P. Gandhi Kallarasan, M.Aikawa, N. Hayasaka, K. Shimomura
    • Journal Title

      J. Crystal Growth

      Volume: 507 Pages: 93-97

    • DOI

      10.1016/j.jcrysgro.2018.10.024

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Journal Article] Lasing characteristics of 1.2 μm GaInAsP LD on InP/Si substrate2018

    • Author(s)
      P. Gandhi Kallarasan, T. Nishiyama, N. Kamada, Y. Onuki, and K. Shimomura
    • Journal Title

      Physica Status Solidi A

      Volume: 215 Issue: 8

    • DOI

      10.1002/pssa.201700357

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Journal Article] Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate2018

    • Author(s)
      M. Aikawa, Y. Onuki, N. Hayasaka, T. Nishiyama, N. Kamada, X. Han, P. Gandhi Kallarasan, K. Uchida, H. Sugiyama and K. Shimomura
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 2S1 Pages: 02BB04-02BB04

    • DOI

      10.7567/jjap.57.02bb04

    • NAID

      210000148623

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Journal Article] 化合物半導体と異種材料との接合技術2016

    • Author(s)
      下村和彦
    • Journal Title

      O plus E

      Volume: 38 Pages: 139-147

    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Journal Article] Novel integration method for III-V semiconductor devices on silicon platform2016

    • Author(s)
      K. Matsumoto, J. Kishikawa, T. Nishiyama, Y. Onuki, and K. Shimomura
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 11 Pages: 1122011-7

    • DOI

      10.7567/jjap.55.112201

    • NAID

      210000147227

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Journal Article] Emission wavelength control of self-catalytic InP/GaInAs/InP core-multishell nanowire on InP substrate grown by MOVPE2016

    • Author(s)
      T. Ogino, K. Asakura, K. Takano, T. Waho, and K. Shimomura
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 3 Pages: 031201-031201

    • DOI

      10.7567/jjap.55.031201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Journal Article] Room-temperature operation of GaInAsP lasers epitaxially grown on wafer-bonded InP/Si substrate2016

    • Author(s)
      K. Matsumoto, J. Kishikawa, T. Nishiyama, T. Kanke, Y. Onuki, and K. Shimomura
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 6 Pages: 0627011-3

    • DOI

      10.7567/apex.9.062701

    • NAID

      210000137931

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Journal Article] Au-assisted growth of InAs nanowires on GaAs(111)B, GaAs(100), InP(111)B, InP(100) by MOVPE2013

    • Author(s)
      S. Murakami , H. Funayama , K. Shimomura and T. Waho
    • Journal Title

      Phys. Staus Solidi C

      Volume: 10 Issue: 5 Pages: 761-764

    • DOI

      10.1002/pssc.201200593

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] Current injected spectrum change in flat-topped InAs/InP QDs arrayed waveguide LED with different QD heights2013

    • Author(s)
      S. Yoshikawa, M. Yamauchi, Y. Yamamoto, K. Shimomura
    • Journal Title

      Phys. Staus Solidi C

      Volume: vol.10, no.11 Pages: 1438-1441

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] Growth of GaInAs/InP MQW using MOVPE on directly-bonded InP/Si substrate2013

    • Author(s)
      K. Matsumoto, T. Makino, K. Kimura, K. Shimomura
    • Journal Title

      J. Crystal Growth

      Volume: 370 Pages: 133-135

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] Selective MOVPE growth of GaInAs/InP MQW on directly-bonded InP/Si substrate2013

    • Author(s)
      K. Matsumoto, X. Zhang, Y. Kanaya, and K. Shimomura
    • Journal Title

      Phys. Staus Solidi C

      Volume: 10 Issue: 11 Pages: 1357-1360

    • DOI

      10.1002/pssc.201300227

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] Growth of GaInAs/InP MQW using MOVPE on directly-bonded InP/Si substrate2013

    • Author(s)
      K. Matsumoto, T. Makino, K. Kimura, and K. Shimomura
    • Journal Title

      J. Crystal Growth

      Volume: 10 Pages: 133-135

    • DOI

      10.1016/j.jcrysgro.2012.09.063

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] Current injected spectrum change in flat-topped InAs/InP QDs arrayed waveguide LED with different QD heights2013

    • Author(s)
      S. Yoshikawa, M. Yamauchi, Y. Yamamoto, and K. Shimomura
    • Journal Title

      Phys. Staus Solidi C

      Volume: 10 Issue: 11 Pages: 1438-1441

    • DOI

      10.1002/pssc.201300226

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] Extremely improved InP template and GaInAsP system growth on directly- bonded InP/SiO2-Si and InP/glass substrate2013

    • Author(s)
      K. Matsumoto, T. Makino, K. Kimura, K. Shimomura
    • Journal Title

      Phys. Staus Solidi C

      Volume: 10 Issue: 5 Pages: 782-785

    • DOI

      10.1002/pssc.201200592

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] InAs/InP QDs grown by selective MOVPE growth using double-cap procedure for broadband LED improved p-cladding layer2012

    • Author(s)
      Y. Iwane, F. Kawashima, M. Hirooka, T. Saegusa, and K. Shimomura
    • Journal Title

      Phys. Staus Solidi C

      Volume: 9 Pages: 210-213

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] Numerical calculation of wavelength demultiplexd light switching using variable index arrayed waveguide2012

    • Author(s)
      T. Makino, T. Tanimura, S. Yanagi, K. Shimomura
    • Journal Title

      IEICE Trans. Electron.

      Volume: vol.E95-C, no. 7 Pages: 1258-1264

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] Switching characteristics in variable index arrayed waveguides using thin film heater2012

    • Author(s)
      S. Yanagi, Y. Murakami, Y. Yamazaki, K.Shimomura
    • Journal Title

      IEICE Trans. Electron.

      Volume: vol.E95-C, no. 7 Pages: 1265-1271

    • NAID

      10031023386

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] Flat-topped emission with spectral width above 500 nm from InAs/InP QD waveguide array light-emitting diode2012

    • Author(s)
      S.Yoshikawa, T.Saegusa, Y.Iwane, M.Yamauchi, K.Shimomura
    • Journal Title

      Applied Physics Express

      Volume: Vol.5 Pages: 92103-92103

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] Flat-topped emission with spectral width above 500 nm from InAs/InP QD waveguide array light-emitting diode2012

    • Author(s)
      S. Yoshikawa, T. Saegusa, Y. Iwane, M. Yamauchi and K. Shimomura
    • Journal Title

      Applied Physics Express

      Volume: 5 Issue: 9 Pages: 092103-092103

    • DOI

      10.1143/apex.5.092103

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] Numerical calculation of wavelength demultiplexd light switching using variable index arrayed waveguide2012

    • Author(s)
      T. Makino, T. Tanimura, S. Yanagi, and K. Shimomura
    • Journal Title

      IEICE Trans. Electron.

      Volume: E95-C Pages: 1258-1264

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] InAs/InP QDs grown by selective MOVPE growth using double-cap procedure for broadband LED improved p-cladding layer2012

    • Author(s)
      Y. Iwane, F. Kawashima, M. Hirooka, T. Saegusa, K. Shimomura
    • Journal Title

      Phys. Staus Solidi C

      Volume: vol.9, no.2 Pages: 210-213

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] Switching characteristics in variable index arrayed waveguides using thin film heater2012

    • Author(s)
      S. Yanagi, Y. Murakami, Y. Yamazaki and K. Shimomura
    • Journal Title

      IEICE Trans. Electron.

      Volume: E95-C Pages: 1265-1271

    • NAID

      10031023386

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] Selective MOVPE growth of InAs QDs using double-cap procedure2011

    • Author(s)
      F.Kawashima, R.Kobie, Y.Suzuki, K.Shimomura
    • Journal Title

      J.Crystal Growth

      Volume: 318 Pages: 1109-1112

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Journal Article] Selective MOVPE growth of InAs QDs using double-cap procedure2011

    • Author(s)
      F.Kawashima, R.Kobie, Y.Suzuki, K.Shimomura
    • Journal Title

      J.Crystal Growth vol.318

      Pages: 1109-1112

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Journal Article] Selective MOVPE growth of InAs QDs using double-cap procedure2011

    • Author(s)
      F. Kawashima, R. Kobie, Y. Suzuki, K. Shimomura
    • Journal Title

      J. Crystal Growth

      Volume: Vol.318 Pages: 1109-1112

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] Selective MOVPE growth of InAs QDs using double-cap procedure2011

    • Author(s)
      F. Kawashima, R. Kobie, Y. Suzuki, and K. Shimomura
    • Journal Title

      J. Crystal Growth

      Volume: 318 Pages: 1109-1112

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Journal Article] Wideband wavelength electroluminescence from InAs/InP QDs using double-cap procedure by MOVPE selective area growth2008

    • Author(s)
      Y.Saito, T.Okawa, M.Akaishi, K.Shimomura
    • Journal Title

      J.Crystal Growth vol.310 issue 23

      Pages: 5073-5076

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Journal Article] Wavelength switching using GaInAs/InP MQW variable refractive-index arrayed waveguides by thermo-optic effect2008

    • Author(s)
      Y. Shimizu, S. Kawabe, H. Iwasaki, T. Sugio, K. Shimomura
    • Journal Title

      IEICE Trans. Electron E91-C

      Pages: 1110-1116

    • NAID

      10026818682

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Journal Article] InAs/InP QDs with GaxInl-xAs cap layer by a double-cap procedure using MOVPE selective area growth2008

    • Author(s)
      M. Akaishi, T. Okawa, Y. Saito, K. Shimomura
    • Journal Title

      J. Crystal Growth 310

      Pages: 5069-5072

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Journal Article] Wide emission wavelength InAs/InP quantum dots grown by double-capped procedure using MOVPE selective area growth2008

    • Author(s)
      M. Akaishi, T. Okawa, Y. Saito, K. Shimomura
    • Journal Title

      IEEE Journal on Selected Topics in Quantum Electronics 14

      Pages: 1197-1203

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Journal Article] InAs/InP QDs with GaxIn1-xAs cap layer by a double-cap procedure using MOVPE selective area growth2008

    • Author(s)
      M.Akaishi, T.Okawa, Y.Saito, K.Shimomura
    • Journal Title

      J.Crystal Growth vol.310, issue 23

      Pages: 5069-5072

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Journal Article] Wide emission wavelength InAs/InP quantum dots grown by double-capped procedure using MOVPE selective area growth2008

    • Author(s)
      M.Akaishi, T.Okawa, Y.Saito, K.Shimomura
    • Journal Title

      IEEE Journal on Selected Topics in Quantum Electronics vol.14, no.4

      Pages: 1197-1203

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Journal Article] Wavelength switching using GaInAs/InP MQW variable refractive-index arrayed waveguides by thermo-optic effect2008

    • Author(s)
      Y.Shimizu, S.Kawabe, H.Iwasaki, T.Sugio, K.Shimomura
    • Journal Title

      IEICE Trans.Electron. vol.E91-C, no.7

      Pages: 1110-1116

    • NAID

      10026818682

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Journal Article] Wideband wavelength electroluminescence from InAs/InP QDsusing double-cap procedure by MOVPE selective area growth2008

    • Author(s)
      Y. Saito, T. Okawa, M. Akaishi, K. Shimomura
    • Journal Title

      J. Crystal Growth 310

      Pages: 5073-5076

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Journal Article] Controlling emission wavelength of double-capped InAs quantum dots by selective MOVPE employing stripe mask array2007

    • Author(s)
      Y.Yamauchi, S.Okamoto, T.Okawa, Y.Kawakita, J.Yoshida, K.Shimomura
    • Journal Title

      Journal Crystal Growth 298

      Pages: 578-581

    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Simple estimation of strain distribution in narrow-stripe waveguide array fabricated by selective MOVPE2007

    • Author(s)
      T.Yoshioka, Y.Kawakita, A.Kawai, T.Okawa, K.Shimomura
    • Journal Title

      J. Crystal Growth 298

      Pages: 676-681

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Growth temperature and InAs supply dependences of InAs quantum dots on InP (0 0 1) substrate2007

    • Author(s)
      T.Okawa, Y.Yamauchi, J.Yamamoto, J.Yoshida, K.Shimomura
    • Journal Title

      J.Crystal Growth vol.298

      Pages: 562-566

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Growth temperature and InAs supply dependences of InAs quantum dots on InP (001) substrate2007

    • Author(s)
      T.Okawa, Y.Yamauchi, J.Yamamoto, J Yoshida, K.Shimomura
    • Journal Title

      J. Crystal Growth 298

      Pages: 562-566

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Simple estimation of strain distribution in narrow-stripe waveguide array fabricated by selective MOVPE2007

    • Author(s)
      T.Yoshioka, Y.Kawakita, A.Kawai, T., Okawa, K.Shimomura
    • Journal Title

      J.Crystal Growth vol.298

      Pages: 676-681

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Controlling emission wavelength of double-capped InAs quantum dots by selective MOVPE employing stripe mask array2007

    • Author(s)
      Y.Yamauchi, S.Okamoto, T.Okawa, Y.Kawakita, J.Yoshida, K.Shimomura
    • Journal Title

      J.Crystal Growth vol.298

      Pages: 578-581

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Simple estimation of strain distribution in narrow-stripe waveguide array fabricated by selective MOVPE2007

    • Author(s)
      T.Yoshiokaa, Y.Kawakita, A.Kawai, T.Okawa, K.Shimomura
    • Journal Title

      Journal Crystal Growth 298

      Pages: 676-681

    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Controlling emission wavelength of double-capped InAs quantum dots by selective MOVPE employing stripe mask array2007

    • Author(s)
      Y.Yamauchi, S.Okamoto, T.Okawa, Y.Kawakita, J.Yoshida, K.Shimomura
    • Journal Title

      J. Crystal Growth 298

      Pages: 578-581

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Growth temperature and InAs supply dependences of InAs quantum dots on InP (0 0 1) substrate2007

    • Author(s)
      T.Okawa, Y.Yamauchi, J.Yamamoto, T.Yoshida, K.Shimomura
    • Journal Title

      Journal Crystal Growth 298

      Pages: 562-566

    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Controlling emission wavelength of double-capped InAs quantum dots by selective MOVPE employing stripe mask array2006

    • Author(s)
      Y.Yamauchi, S.Okamoto, T.Okawa, Y.Kawakita, J.Yoshida, K.Shimomura
    • Journal Title

      13th International Conference on Metal Organic Vapor Phase Epitaxy

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Controlling emission wavelength of double-capped InAs quantum dots by selective MOVPE employing stripe mask array2006

    • Author(s)
      Y.Yamauchi, S.Okamoto, T.Okawa, Y.Kawakita, J.Yoshida, K.Shimomura
    • Journal Title

      13th International Conference on Metal Organic Vapor Phase Epitaxy Tu-P.90

      Pages: 225-225

    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Size fluctuation dependence on growth temperature and supply of InAs quantum dots on InP(001) substrates2006

    • Author(s)
      T.Okawa, Y.Yamauchi, J.Yamamoto, J.Yoshida, K.Shimomura
    • Journal Title

      13th International Conference on Metal Organic Vapor Phase Epitaxy Tu-P.86

      Pages: 217-217

    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Improvements of crosstalk in variable-refractive index waveguide array demultiplexer2006

    • Author(s)
      T.Yoshioka, Y.Kawakita, D.Machida, K.Shimomura
    • Journal Title

      Conference on Lasers and Electro-Optics (CLEO 2006) (Long Beach, California, USA) CWK4

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Improvements of crosstalk in variable-refractive index waveguide array demultiolexer2006

    • Author(s)
      T.Yoshioka, Y.Kawakita, D.Machida, K.Shimomura
    • Journal Title

      Conference on Lasers and Electro-Optics (CLEO 2006)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Improvements of crosstalk in variable-refractive index waveguide array demultiplexe2006

    • Author(s)
      T.Yoshioka, Y.Kawakita, D.Machida, K.Shimomura
    • Journal Title

      Conference on Lasers and Electro-Optics (CLEO 2006) CWK4(CD-ROM)

    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Controlling emission wavelength of double-capped InAs quantum dots by selective MOVPE employing stripe mask array2006

    • Author(s)
      Y.Yamauchi, S.Okamoto, T.Okawa, Y.Kawakita, J.Yoshida, K.Shimomura
    • Journal Title

      13th International Conference on Metal Organic Vapor Phase Epitaxy (Miyazaki, Japan) Tu-P.90

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Wavelength demultiplexer using GaInAs-InP MQW-based variable refractive-index arrayed waveguides fabricated by selective MOVPE2005

    • Author(s)
      Y.Kawakita, S.Shimotaya, A.Kawai, D.Machida, K.Shimomura
    • Journal Title

      IEEE Journal of Selected Topics in Quantum Electronics Vol.11,no1

      Pages: 211-215

    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Size and Density Control of InAs Quantum Dots by Selective MOVPE Growth Employing Stripe Mask Array and Composition-Varied GaInAs Layer2005

    • Author(s)
      Y.Yamauchi, Y.Kawakita, S.Okamoto, J.Yoshida, K.Shimomura
    • Journal Title

      Proceeding of LEOS 2005

    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Size and Density Control of InAs Quantum Dots by Selective MOVPE Growth Using Narrow Stripe Mask Array2005

    • Author(s)
      S.Okamoto, Y.Kawakita, K.Hirose, Y.Yamauchi, K.Shimomura
    • Journal Title

      Proceeding of IQEC and CLEO-PR 2005

    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Wavelength selective switch using arrayed waveguides with linearly varing refractive index distribution2005

    • Author(s)
      K.Shimomura, Y.Kawakita
    • Journal Title

      Photonics Based on Wavelength Integration and Manipulation, IPAP Books 2

      Pages: 341-354

    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] 組成変化GaInAs層を用いた選択成長InAs量子ドットの形状・密度に関する検討2005

    • Author(s)
      山内 雄介, 川北 泰雅, 岡本 理志, 吉田 順自, 下村 和彦
    • Journal Title

      第65回応用物理学学術講演会講演予稿集

    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Wavelength demultiplexer using GaInAs-InP MQW-based variablel refractive-index arrayed waveguides fabricated by slective MOVPE2005

    • Author(s)
      Y.Kawakita, S.Shimotaya, A.Kawai, D.Machida, K.Shimomura
    • Journal Title

      IEEE Journal on Selected Topics in Quantum Electronics vol.11 no.1

      Pages: 211-216

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Wavelength demultiplexing and optical deflector in variable refractive-index waveguide array based on selectively grown GaInAs/InP MQW structure2005

    • Author(s)
      Y.Kawakita, S.Shimotaya, D.Machida, K.Shimomura
    • Journal Title

      IEICE Trans. Electron E88-C

      Pages: 1013-1019

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Wavelength demultiplexer using GaInAs-InP MQW-based variable refractive-index arrayed waveguides fabricated by selective MOVPE2005

    • Author(s)
      Y.Kawakita, S.Shimotaya, A.Kawai, D.Machida, K.Shimomura
    • Journal Title

      IEEE Journal on Selected Topics in Quantum Electronics 11

      Pages: 211-216

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Wavelength demultiplexer using GaInAs-InP MQW-based variable refractive-index arrayed waveguides fabricated by selective MOVPE2005

    • Author(s)
      Y.Kawakita, S.Shimotaya, A.Kawai, D.Machida, K.Shimomura
    • Journal Title

      IEEE Journal on Selected Topics in Quantum Electronics vol.11, no.1

      Pages: 211-216

    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Wavelength demultiplexing and optical deflector in variable refractive-index waveguide array based on selectively grown GaInAs/InP MQW structure2005

    • Author(s)
      Y.Kawakita, S.Shimotaya, D.Machida, K.Shimomura
    • Journal Title

      IEICE Trans.Electron. vol.E88-C, no.5,

      Pages: 1013-1019

    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Wavelength demultiplexing and optical deflector in variable refractive-index waveguide array based on selectively grown GaInAs/InP MQW structure,2005

    • Author(s)
      Y.Kawakita, S.Shimotaya, D.Machida, K.Shimomura
    • Journal Title

      IEICE Trans.Electron. vol.E88-C, no.5

      Pages: 1013-1019

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360169
  • [Journal Article] Arrayed waveguides with linearly varying refractive index distribution and its application for wavelength demultiplexer2004

    • Author(s)
      Y.Kawakita, T.Saitoh, A.Kawai, S.Shimotaya, K.Shimomura
    • Journal Title

      J.Crystal Growth vol.272

      Pages: 582-587

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Selective MOVPE growth of tilted arrayed waveguides from [011] direction2004

    • Author(s)
      Y.Kawakita, A.Kawai, S.Shimotaya, K.Shimomura
    • Journal Title

      12th International Conference on Metal Organic Vapor Phase Epitaxy, Lahaina, Maui, Hawaii Growth Issues Poster Session (30)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Four-channel wavelength demultiplexing with 25-nm spacing in variable refractive-index arrayed waveguides2004

    • Author(s)
      Y.Kawakita, S.Shimotaya, D.Machida, K.Shimomura
    • Journal Title

      Electron.Lett vol.40,no.14

      Pages: 900-901

    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] A novel straight arrayed waveguide grating with linearly varying refractive indexdistribution2004

    • Author(s)
      Y.Kawakita, T.Saitoh, S.Shimotaya, K.Shimomura
    • Journal Title

      IEEE Photon.Tech.Lett. vol.16 no.1

      Pages: 144-146

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Flatsurface growth conditions of InP capping layer over InAs Quantum Dots on(001)InP Substrate2004

    • Author(s)
      K.Hirose, S.Okamoto, J.Yamamoto, T.Shioda, K.Shimomura
    • Journal Title

      12th International Conference on Metal Organic Vapor Phase Epitaxy, Lahaina, Maui, Hawaii Quantum Structures Poster Session (11)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Four-channel wavelength demultiplexing with 25-nm spacing in variable refractive-index arrayed waveguides2004

    • Author(s)
      Y.Kawakita, S.Shimotaya, D.Machida, K.Shimomura
    • Journal Title

      Electron.Lett 40

      Pages: 900-901

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Wavelength demultiplexer using arrayed waveguides with linearly varying refractiveindex distribution2004

    • Author(s)
      Y.Kawakita, S.Shimotaya, T.Saitoh, K.Shimomura
    • Journal Title

      2004 Conference on Lasers & Electro-Optics, San Francisco, California, USA CThT8

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Wavelength demultiplexing characteristic in Two-mode interference opticaldevice by MOVPE selective area growth2004

    • Author(s)
      H.Fukuda, T.Yuuki, T.Kurihashi, Y.Iwabuchi, K.Shimomura
    • Journal Title

      9th OptoElectronics and Communications Conference / 3rd Conference on Optical Internet (OECC/C01N2004) Kanagawa, Japan 13P-17

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Arrayed waveguides with linearly varying refractive index distribution and its application for wavelength demultiplexer2004

    • Author(s)
      Y.Kawakita, T.Saitoh, A.Kawai, S.Shimotaya, K.Shimomura
    • Journal Title

      J.Crystal Growth 272

      Pages: 582-587

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] A novel straight arrayed waveguide grating with linearly varying refractive index distribution2004

    • Author(s)
      Y.Kawakita, T.Saitoh, S.shimotaya, K.Shimomura
    • Journal Title

      IEEE Photon.Tech.Lett. vol.16,no.1

      Pages: 144-146

    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Arrayed waveguides with linearly varying refractive index distribution and its a plication far wavelength demultiplexer2004

    • Author(s)
      Y.Kawakita, T.Saitoh, A.Kawai, S.Shimotaya, K.Shimomura
    • Journal Title

      2004 International Conference on Indium Phosphide and Related Materials, Kagoshima, Japan WA2-5

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Selective MOVPE growth of tilted arrayed waveguides from [011] direction2004

    • Author(s)
      Y.Kawakita, A.Kawai, S.Shimotaya, K.Shimomura
    • Journal Title

      12th International Conference on Metal Organic Vapor Phase Epitaxy

    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Opticaldeflector using arrayed waveguides fabricated by MOVPE selective area growth2004

    • Author(s)
      Y.Kawakita, S.Shimotaya, D.Machida, K.Shimomura
    • Journal Title

      9th OptoElectronics and Communications Conference / 3rd Conference on Optical Internet (OECC/COIN2004) Kanagawa, Japan 13P-118

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Flat surface growth conditions of InP capping layer over InAs Quantum Dots on (001)InP Substrate2004

    • Author(s)
      K.Hirose, S.Okamoto, J.Yamamoto, T.Shioda, K.Shimomura
    • Journal Title

      12th International Conference on Metal Organic Vapor Phase Epitaxy

    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] 4-channel wavelength demultiplexing in GaInAs/1nP MQW based arrayed waveguides2004

    • Author(s)
      Y.Kawakita, S.Shimotaya, D.Machida, K.Shimomura
    • Journal Title

      9th OptoElectronics and Communications Conference / 3rd Conference on Optical Internet (OECC/COIN2004) Kanagawa, Japan 14F1-4

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] A novel straight arrayed waveguide grating with linearly varying refractive index distribution2004

    • Author(s)
      Y.Kawakita, T.Saitoh, S.Shimotaya, K.Shimomura
    • Journal Title

      IEEE Photon.Tech.Lett. 16

      Pages: 144-146

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Four-channel wavelength demultiplexing with 25-nm spacing in variable refractive-indexarrayed waveguides2004

    • Author(s)
      Y.Kawakita, S.Shimotaya, D.Machida, K.Shimomura
    • Journal Title

      Electron.Lett. vol.40 no.14

      Pages: 900-901

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Numerical analysis of 1.55 um wavelength optical deflector using arrayed waveguide with staircaselike refractive index distribution2003

    • Author(s)
      K.Miki, Y.Kawakita, T.Kihara, K.Shimomura
    • Journal Title

      Electronics and Communications in Japan, Part2 vol.86 no.4

      Pages: 1-9

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] High growth enhancement factor in arrayed waveguides by MOVPE selective area growth2003

    • Author(s)
      Y.Moriguchi, T.Kihara, K.Shimomura
    • Journal Title

      J.Crystal Growth 248

      Pages: 395-399

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Numerical analysis of 1.55 um wavelength optical deflector using arrayed waveguide with staircase like refractive index distribution2003

    • Author(s)
      K.Miki, Y.Kawakita, T.Kihara, K.Shimomura
    • Journal Title

      Electronics and Communications in Japan, Part2 86

      Pages: 1-9

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] Wavelength demultiplexing in straight arrayed waveguides with staircase-like refractive index distribution2003

    • Author(s)
      Y.Kawakita, Y.Moriguchi, K.Shimomura
    • Journal Title

      Conference on Lasers and Electro-Optics(CLEO 2003), Baltimore, Maryland, USA CWA44

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Journal Article] High growth enhancement factor in arrayed waveguides by MOVPE selective areagrowth2003

    • Author(s)
      Y.Moriguchi, T.Kihara, K.Shimomura
    • Journal Title

      J.Crystal Growth vol.248

      Pages: 395-399

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15560304
  • [Presentation] ガスアウトチャネルを有する直接貼付InP/Si基板上GaInAsP系半導体レーザの発振特性(Ⅱ)2024

    • Author(s)
      趙亮, G.K.Periyanayagam, Zhang Junyu, 矢田涼介, 下村和彦
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] InP/Si基板上GaInAsP半導体レーザの利得特性の測定2024

    • Author(s)
      Junyu Zhang, G.K.Periyanayagam, 趙亮, 下村和彦
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] InP/Si基板上SCH - MQW レーザの散乱損失を考慮した低しきい値構造の検討2024

    • Author(s)
      黒井瑞生, 趙 亮, 下村和彦
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] ガスアウトチャネルを有する直接貼付InP/Si基板上GaInAsP系半導体レーザの発振特性2024

    • Author(s)
      趙 亮, G.K. Periyanayagam, Zhang Junyu, 矢田涼介, 下村和彦
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] Numerical simulation of waveguide propagation loss on directly bonded InP/Si substrate2023

    • Author(s)
      L. Zhao, K. Agata, R. Yada, J. Zhang, and K. Shimomura
    • Organizer
      Compound Semiconductor Week 2023 (CSW 2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] 直接貼付 InP/Si基板上 GaInAsP/GaInAsP MQWレーザの歪量依存性の検討Ⅱ2022

    • Author(s)
      阿形幸二, 渋川航大, 趙 亮, 佐藤元就, 伊藤慎吾, 下村和彦
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] 直接貼付 InP/Si基板上 GaInAsP SCH-MQW埋込レーザの発振特性改善2022

    • Author(s)
      青木彩絵, 澁川航大, 韓 旭, 佐藤元就, 伊藤慎吾, 阿形幸二, 矢田涼介, 下村和彦
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] 自己触媒VLS法を用いた再成長InPコアシェルナノワイヤのフォトルミネッセンス特性2022

    • Author(s)
      香取祐太, 陳 深, 下村和彦
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] 直接貼付InP/Si基板のボイドによる導波損失の数値計算(Ⅱ)2022

    • Author(s)
      趙 亮, 阿形幸二, 伊藤慎吾, 矢田涼介, 下村和彦
    • Organizer
      第70回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] 直接貼付 InP/Si基板の加熱処理シーケンスの依存性について2022

    • Author(s)
      趙 亮, 佐藤元就, 澁川航大, 伊藤慎吾, 阿形幸二, 下村和彦
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] 直接貼付InP/Si基板上GaInAsP SCH-MQWレーザの井戸層厚と閾値電流密度に関する検討2022

    • Author(s)
      矢田涼介, 阿形幸二, 趙亮,伊藤慎吾,青木彩絵, 下村和彦
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] 直接貼付InP/Si基板のボイドによる導波損失の数値計算2022

    • Author(s)
      趙 亮, 阿形幸二, 伊藤慎吾,矢田涼介,下村和彦
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] Annealing sequence dependence of directly bonded InP/Si substrate for GaInAsP LDs on silicon platform2022

    • Author(s)
      L. Zhao, M. Sato, K. Shibukawa, S. Ito, K. Agata, and K. Shimomura
    • Organizer
      Conference on Lasers and Electro-Optics PacificRim 2022
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] 選択成長MOVPEによる直接貼付InP/Si基板上GaInAsP/GaInAsP MQW構造のフォトルミネッセンス特性2021

    • Author(s)
      澁川航大, 対馬幸樹, 伊藤慎吾, 石崎隆浩, 阿形幸二, 白井琢人, 佐藤元就, 小谷桃子, 韓旭, 下村和彦
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] ガスアウトチャネルを用いた直接貼付InP/Si基板のボイド占有率比較2021

    • Author(s)
      佐藤元就, 韓旭, 白井琢人, 石﨑隆浩, 対馬幸樹, 澁川航大, 小谷桃子, 伊藤慎吾, 阿形幸二, 下村和彦
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] Buried hetero structure laser diode on directly bonded InP/Si substrate2021

    • Author(s)
      X. Han, K. Tsushima, M. Sato, T. Shirai, M. Sato, S. Ito, T. Ishizaki, K. Shibukawa, K. Agata and K. Shimomura
    • Organizer
      27th International Semiconductor Laser Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] 直接貼付 InP/Si 基板上 GaInAsP/GaInAsP MQW レーザの歪量依存性の検討2021

    • Author(s)
      阿形幸二, 石崎隆浩, 韓旭, 対馬幸樹, 白井琢人, 佐藤元就, 渋川航大, 伊藤慎吾,下村和彦
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] Selective regrown core-shell nanowires using self-catalytic VLS mode2021

    • Author(s)
      K. Kuwahara, R. Ishihara, Y. Katori, and K. Shimomura
    • Organizer
      26th Optoelectronics and Communications Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] MQW laser with surface electrodes on directly bonded InP/SiO2/Si substrates2021

    • Author(s)
      X. Han, K. Tsushima, T. Shirai, M. Sato, S. Ito, T. Ishizaki, K. Shibukawa, K. Agata, M. Kotani and K. Shimomura
    • Organizer
      26th Optoelectronics and Communications Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] 直接貼付InP/Si基板上GaInAsP SCH-MQW埋込レーザの発振特性改善2021

    • Author(s)
      澁川航大,韓旭,対馬幸樹,石崎隆浩,白井琢人,佐藤元就,伊藤慎吾, 阿形幸二, 小谷桃子, 青木彩絵, 矢田涼介, 下村和彦
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-21K04199
  • [Presentation] 直接貼付 InP/SiO2/Si 基板上 GaInAsP/GaInAsP SCH-MQW レーザの電界分布特性2021

    • Author(s)
      伊藤慎吾, 韓旭, 澁川航大, 対馬幸樹, 石崎隆浩, 白井琢人, 佐藤元就, 阿形幸二, 小谷桃子, 下村和彦
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付 InP/SiO2/Si 基板上表面二電極構造 MQW レーザの発振特性2021

    • Author(s)
      韓旭, 対馬幸樹, 石崎隆浩, 白井琢人, 佐藤元就, 澁川航大, 伊藤慎吾, 阿形幸二, 小谷桃子, 下村和彦
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上GaInAsP/GaInAsP SCH-MQW埋込レーザ構造の室温発振特性2020

    • Author(s)
      対馬幸樹, 韓旭,石崎隆浩,松浦正樹,白井琢人,澁川航大,藤原啓太,佐藤元就,下村和彦
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] Selective MOVPE growth of GAInAsP MQW structure on wafer bonded InP/Si and InP/SiO2/Si substrate2020

    • Author(s)
      K. Shibukawa, X. Han, T. Ishizaki, K. Tsushima, T. Shirai, M. Matsuura, K. Fujiwara, M. Sato, and K. Shimomura
    • Organizer
      25th Optoelectronics and Communications Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上GaInAsP/GaInAsP歪MQWレーザの発振特性2020

    • Author(s)
      石崎隆浩, 韓旭, 松浦正樹, 対馬幸樹, 白井琢人, 藤原啓太, 佐藤元就, 渋川航大, 下村和彦
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板の加熱処理プロセスの依存性について2020

    • Author(s)
      佐藤元就, 韓旭, 松浦正樹, 白井琢人, 石﨑隆浩, 対馬幸樹, 澁川航大, 藤原啓太, 下村和彦
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] Buried heterostructure laser diodes using directly bonded InP thin film on silicon substrate2020

    • Author(s)
      K. Tsushima, T. Shirai, K. Fujiwara, X. Han, M. Matsuura, M. Sato, T. Ishizaki, K. Shibukawa, and K. Shimomura
    • Organizer
      25th Optoelectronics and Communications Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上選択成長GaInAsP/GaInAsP MQW構造のフォトルミネッセンス特性2020

    • Author(s)
      澁川航大, 対馬幸樹, 石崎隆浩,白井琢人,佐藤元就,藤原啓太,韓旭,松浦正樹,下村和彦
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] Double capped InAs Quantum Dots with strain compensation layer grown on InP/Si substrate2020

    • Author(s)
      T. Shirai, X. Han, T. Ishizaki, K. Tsushima, M. Matsuura, K. Shibukawa, K. Fujiwara, M. Sato, and K. Shimomura
    • Organizer
      25th Optoelectronics and Communications Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 歪み緩衝層を導入したInP/Si基板上InAs量子ドット構造2020

    • Author(s)
      白井琢人, 韓旭, 石崎隆浩, 対馬幸樹, 佐藤元就, 下村和彦
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/SiO2/Si基板上表面二電極構造MQW レーザの発振特性2020

    • Author(s)
      韓旭, 松浦正樹, 対馬幸樹, 石崎隆浩, 白井琢人, 下村和彦
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上GaInAsP/GaInAsP SCH-MQWレーザ構造のX線回折評価2019

    • Author(s)
      対馬幸樹, 杉山滉一, 内田和希, 韓旭, 相川政輝, 早坂夏樹, 松浦正樹, 石崎隆浩, 白井琢人, 下村和彦
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上GaInAsP/GaInAsP SCH-MQW レーザの発振特性2019

    • Author(s)
      石崎隆浩, 杉山滉一, 内田和希, 韓旭, 相川政輝, 早坂夏樹, 松浦正樹, 対馬幸樹, 白井琢人, 下村和彦
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上MQWレーザにおける電流電圧特性のInP膜厚依存性について2019

    • Author(s)
      白井琢人, 早坂夏樹, 相川政輝, 韓 旭, 杉山滉一, 内田和希, 松浦正樹, 石崎隆浩, 対馬幸樹, 下村和彦
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] Lasing characteristics of GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate2019

    • Author(s)
      T. Ishizaki, K. Uchida, H. Sugiyama, X. Han, N. Hayasaka, M. Aikawa, M. Matsuura, K. Tsushima, T. Shirai, and K. Shimomura
    • Organizer
      24th OptoElectronics and Communications Conference (OECC/PSC 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] Template thickness dependence of GaInAsP MQW laser diode grown on directly bonded InP/Si substrate2019

    • Author(s)
      T. Shirai, X. Han, M. Matsuura, T. Ishizaki, K. Tsushima, and K. Shimomura
    • Organizer
      24th OptoElectronics and Communications Conference (OECC/PSC 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上GaInAsP/GaInAsP SCH-MQW レーザの温度依存性2019

    • Author(s)
      石崎隆浩, 韓旭, 松浦正樹, 対馬幸樹, 白井琢人, 下村和彦
    • Organizer
      第80回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上表面二電極構造MQWレーザの発振特性2019

    • Author(s)
      韓旭, 松浦正樹, 対馬幸樹, 石崎隆浩, 白井琢人, 下村和彦
    • Organizer
      第80回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板における発振特性のアニール時間依存性2019

    • Author(s)
      松浦正樹, 早坂夏樹, 韓旭,相川政輝,内田和希,杉山滉一, 石崎隆浩, 対馬幸樹, 白井琢人,下村和彦
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上MQWレーザにおける発振特性のInPテンプレート膜厚依存性2019

    • Author(s)
      韓旭, 内田和希,相川政輝,杉山滉一, 早坂夏樹,松浦正樹, 対馬幸樹, 石崎隆浩, 白井琢人,下村和彦
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上選択成長GaInAs/InP MQW構造のフォトルミネッセンス解析2019

    • Author(s)
      対馬幸樹, 石崎隆浩, 韓旭, 松浦正樹, 白井琢人, 下村和彦
    • Organizer
      第80回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] Lasing characteristics of GaInAsP SCH MQW high-mesa laser on silicon substrate2019

    • Author(s)
      K. Tsushima, K. Uchida, X. Han, H. Sugiyama, M. Aikawa, N. Hayasaka, M. Matsuura, T. Ishizaki, T. Shirai, and K. Shimomura
    • Organizer
      24th OptoElectronics and Communications Conference (OECC/PSC 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] InP基板及び直接貼付InP/Si基板上自己形成InAs量子ドットのPL特性について2019

    • Author(s)
      白井琢人, 韓旭, 松浦正樹, 石崎隆浩, 対馬幸樹, 下村和彦
    • Organizer
      第80回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] Hybrid integration of GaInAsP LD on silicon platform by epitaxial growth using directly bonded InP/Si substrate2018

    • Author(s)
      K. Shimomura
    • Organizer
      SPIE Photonics Europe 2018
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 親水性直接貼付InP/Si基板のInP膜厚の検討2018

    • Author(s)
      矢田拓夢, 相川政輝 , 早坂夏樹, P. Gandhi Kallarasan, 韓旭, 内田和希, 杉山滉一, 下村和彦
    • Organizer
      電子情報通信学会技術研究報告
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate2018

    • Author(s)
      H. Sugiyama, N. Kamada, Y. Onuki, X. Han, P. Gandhi Kallarasan, M. Aikawa, N. Hayasaka, K. Uchida, and K. Shimomura
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 1.5 μm GaInAsP stripe laser comparison between InP substrate and directly bonded InP/Si substrate2018

    • Author(s)
      P. Gandhi Kallarasan, N. Kamada, Y. Onuki, K. Uchida, H. Sugiyama, X. Han, N. Hayasaka, M. Aikawa, and K. Shimomura
    • Organizer
      Conference on Lasers and Electro-Optics 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上1.5μm帯GaInAsPリッジレーザの室温発振特性2018

    • Author(s)
      内田和希, 鎌田直樹, 大貫雄也, 韓旭, P. Gandhi Kallarasan, 杉山滉一, 相川政輝, 早坂夏樹, 下村和彦
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板におけるボイド占有率のアニール時間依存性 (2)2018

    • Author(s)
      早坂夏樹, 韓旭, P. Gandhi Kallarasan, 相川政輝, 内田和希, 杉山滉一, 松浦正樹, 矢田拓夢, 下村和彦
    • Organizer
      第79回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] ダブルキャップ法を用いたInAs量子ドット構造のPL特性の比較2018

    • Author(s)
      矢田拓夢, 内田和希, 杉山滉一, 韓旭, 相川政輝, 早坂夏樹, 松浦正樹, 下村和彦
    • Organizer
      第79回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板へのMOVPE成長によるGaInAsP系半導体レーザの発振特性2018

    • Author(s)
      下村和彦
    • Organizer
      電気学会 光・量子デバイス研究会, パワー光源及び応用システム研究会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上1.5µm帯GaInAsPストライプレーザの閾値電流密度の共振器長依存性2018

    • Author(s)
      矢田拓夢, 鎌田直樹, 大貫雄也, 韓旭, P. Gandhi Kallarasan, 相川政輝, 内田和希, 杉山滉一, 早坂夏樹, 佐藤栄成, 松浦正樹, 下村和彦
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 1.5 um GaInAsP high mesa laser diode on directly bonded InP/Si substrate2018

    • Author(s)
      P. Gandhi Kallarasan, K. Uchida, H. Sugiyama, X. Han, N. Hayasaka, M. Aikawa, H. Yada and K. Shimomura
    • Organizer
      26th International Semiconductor Laser Conference (ISLC2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上GaInAsPレーザのInPテンプレート膜厚依存性2018

    • Author(s)
      相川政輝, 早坂夏樹, 韓 旭, 松浦正樹, Gandhi Kallarasan Periyanayagam, 内田和希, 杉山滉一, 矢田拓夢, 下村和彦
    • Organizer
      電子情報通信学会 光エレクトロニクス研究会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板におけるInP薄膜の表面状態の評価2018

    • Author(s)
      松浦正樹, 早坂夏樹, 韓旭,相川政輝,内田和希,杉山滉一, 矢田拓夢,下村和彦
    • Organizer
      第79回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上GaInAsP/GaInAsP SCH-MQW レーザ構造の検討2018

    • Author(s)
      杉山滉一, 鎌田直樹, 大貫雄也, 韓旭, P. Gandhi Kallarasan, 相川政輝, 早坂夏樹, 内田和希,下村和彦
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上1.5um帯GaInAsPハイメサレーザの室温発振特性2018

    • Author(s)
      内田和希, 韓 旭, P. Gandhi Kallarasan, 杉山滉一, 相川政輝, 早坂夏樹, 矢田拓夢, 松浦正樹, 下村和彦
    • Organizer
      第79回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上GaInAsP/GaInAsP SCH-MQW レーザ構造の発振特性2018

    • Author(s)
      杉山滉一, 内田和希, 韓 旭, 矢田拓夢, P. Gandhi Kallarasan, 相川政輝, 早坂夏樹, 松浦正樹, 下村和彦
    • Organizer
      第79回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] Lasing characteristics of 1.5μm GaInAsP ridge laser diode on directly bonded inP/Si substrate2018

    • Author(s)
      P. Gandhi Kallarasan, N. Kamada, Y. Onuki, K. Uchida, H. Sugiyama, X. Han, N. Hayasaka, M. Aikawa, and K. Shimomura
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] MOVPE growth of GaInAsP system on directly bonded InP/Si substrate2018

    • Author(s)
      P. Gandhi Kallarasan and K. Shimomura
    • Organizer
      EMN Vienna Meeting 2018
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] Lasing characteristics of GaInAsP/InP ridge waveguide laser diode grown on InP/Si substrate2018

    • Author(s)
      K. Uchida, N. Kamada, Y. Onuki, X. Han, P. Gandhi Kallarasan, H. Sugiyama, M. Aikawa, N. Hayasaka, and K. Shimomura
    • Organizer
      19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 直接貼付InP/Si基板上GaInAsPレーザにおける電気特性のInPテンプレート膜厚依存性2018

    • Author(s)
      韓旭, P. Gandhi Kallarasan, 内田和希,相川政輝,杉山滉一, 早坂夏樹,松浦正樹,矢田拓夢,下村和彦
    • Organizer
      第79回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] 親水性直接貼付InP/Si基板上GaInAsPレーザとInP基板上レーザの発振特性比較2018

    • Author(s)
      矢田拓夢, 内田和希, 杉山滉一, P. Gandhi Kallarasan, 韓旭, 相川政輝, 早坂夏樹, 下村和彦
    • Organizer
      電子情報通信学会技術研究報告
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] Successful fabrication of GaInAsP ridge waveguide laser diode using hydrophilic bonded InP/Si substrate2018

    • Author(s)
      H. Yada, N. Kamada, Y. Onuki, X. Han, P. Gandhi Kallarasan, K. Uchida, H. Sugiyama, M. Aikawa, N. Hayasaka, and K. Shimomura
    • Organizer
      The 13th Pacific Rim Conference on Lasers and Electro-Optics (CLEO-PR 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18H01503
  • [Presentation] Novel integration method for III-V semiconductor devices on silicon platform based on direct bonding and MOVPE growth2017

    • Author(s)
      K. Shimomura
    • Organizer
      2017 5th International Workshop on Low Temperature Bonding for 3D Integration,
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上1.5μm帯GaInAsPダブルヘテロレーザの電気特性2017

    • Author(s)
      韓旭, 西山哲央, 鎌田直樹, 大貫雄也, Gandhi Kallarasan, 内田和希, 相川政輝,杉山滉一, 早坂夏樹,下村和彦
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 神奈川
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] Bonding temperature dependence of GaInAsP/InP wafer grown on directly bonded InP/Si substrate2017

    • Author(s)
      M. Aikawa, T. Nishiyama, Y. Onuki, N. Kamada, X. Han, Gandhi Kallarasan P., K. Uchida, H. Sugiyama, N. Hayasaka, and K. Shimomura
    • Organizer
      2017 5th International Workshop on Low Temperature Bonding for 3D Integration
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上1.5µm帯GaInAsPダブルヘテロレーザ閾値電流密度共振器長依存性2017

    • Author(s)
      鎌田直樹, 大貫雄也, 韓旭, P. Gandhi Kallarasan, 相川政輝, 内田和希, 杉山滉一, 早坂夏樹, 下村和彦
    • Organizer
      第78回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] Lasing characteristics and temperature dependence of 1.5µm GaInAsP laser diode grown on directly bonded InP/Si substrate2017

    • Author(s)
      N. Kamada, T. Nishiyama, Y. Onuki, X. Han, Gandhi Kallarasan P., M. Aikawa, K. Uchida, H. Sugiyama, N. Hayasaka, and K. Shimomura
    • Organizer
      Compound Semiconductor Week 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上GaInAsPレーザの貼付アニール温度依存性2017

    • Author(s)
      相川政輝, 大貫雄也, 早坂夏樹, 鎌田直樹, 韓旭, Gandhi Kallarasan P., 内田和希, 杉山滉一, 下村和彦
    • Organizer
      第78回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上1.5μm帯GaInAsPレーザの電気特性2017

    • Author(s)
      韓旭, 鎌田直樹, 大貫雄也, P. Gandhi Kallarasan, 内田和希, 相川政輝, 杉山滉一, 早坂夏樹, 下村和彦
    • Organizer
      第78回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上1.5μm帯GaInAsPレーザの低温発振特性2017

    • Author(s)
      内田和希, 西山哲央, 鎌田直樹, 大貫雄也, 韓旭, Periyanayagam Gandhi Kallarasan, 杉山滉一, 相川政輝, 早坂夏樹,下村和彦
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 神奈川
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 高機能・高集積光デバイスを支える異種材料貼り合わせ技術2017

    • Author(s)
      下村和彦
    • Organizer
      電子情報通信学会2017年ソサイエティ大会
    • Invited
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上1.5µm帯GaInAsPダブルヘテロレーザの発振特性2017

    • Author(s)
      鎌田直樹, 西山哲央, 大貫雄也, 韓旭, Periyanayagam Gandhi Kallarasan, 相川政輝, 内田和希, 杉山滉一, 早坂夏樹, 下村和彦
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 神奈川
    • Year and Date
      2017-03-16
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上1.5μm帯GaInAsPストライプレーザの室温発振特性2017

    • Author(s)
      内田和希, 鎌田直樹, 大貫雄也, 韓旭, P. Gandhi Kallarasan, 杉山滉一, 相川政輝, 早坂夏樹, 下村和彦
    • Organizer
      第78回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 1.5μm laser diode on InP/Si substrate by epitaxial growth using direct bonding method2017

    • Author(s)
      Gandhi Kallarasan P., T. Nishiyama, N. Kamada, Y. Onuki, and K. Shimomura
    • Organizer
      Conference on Lasers and Electro-Optics 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] Fabrication of 1.5μm GaInAsP LD on InP/Si substrate using hydrophilic wafer bonding technique2017

    • Author(s)
      P. Gandhi Kallarasan, T. Nishiyama, N. Kamada, Y. Onuki and K. Shimomura
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 神奈川
    • Year and Date
      2017-03-16
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上GaInAsPレーザの基板加熱温度依存性2017

    • Author(s)
      大貫雄也, 西山哲央, 鎌田直樹, 韓旭, Periyanayagam Gandhi Kallarasan, 相川政輝, 内田和希, 杉山滉一, 早坂夏樹, 下村和彦
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 神奈川
    • Year and Date
      2017-03-16
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] シリコン基板上InP系半導体デバイス集積化技術2017

    • Author(s)
      下村和彦
    • Organizer
      2017年電子情報通信学会総合大会
    • Place of Presentation
      名城大学, 天白キャンパス, 名古屋
    • Year and Date
      2017-03-24
    • Invited
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付けInP/Si基板上レーザ構造における電圧電流特性のアニール温度依存性2017

    • Author(s)
      早坂夏樹, 西山哲央,大貫雄也, 鎌田直樹, 韓旭, Gandhi Kallarasan Periyanayagam,相川政輝,内田和希,杉山滉一,下村和彦
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 神奈川
    • Year and Date
      2017-03-15
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] Lasing characteristics of GaInAsP stripe laser integrated on InP/Si substrate2017

    • Author(s)
      K. Uchida, T. Nishiyama, N. Kamada, Y. Onuki, X. Han, Gandhi Kallarasan P., H. Sugiyama, M. Aikawa, N. Hayasaka, and K. Shimomura
    • Organizer
      The 22nd OptoElectronics and Communications Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上GaInAsPレーザの低閾値構造の検討2017

    • Author(s)
      杉山滉一, 鎌田直樹, 大貫雄也, 韓旭, P. Gandhi Kallarasan, 相川政輝, 早坂夏樹, 内田和希, 下村和彦
    • Organizer
      第78回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] Low threshold current of GaInAsP laser grown on directly bonded InP/Si substrate2017

    • Author(s)
      H. Sugiyama, T. Nishiyama, N. Kamada, Y. Onuki, X. Han, Gandhi Kallarasan P., M. Aikawa, N. Hayasaka, K. Uchida, and K. Shimomura
    • Organizer
      The 22nd OptoElectronics and Communications Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板におけるボイド占有率のアニール時間依存性2017

    • Author(s)
      早坂夏樹, 大貫雄也, 鎌田直樹, 韓旭, P. Gandhi Kallarasan, 相川政輝, 内田和希, 杉山滉一, 松浦正樹, 矢田拓夢, 下村和彦
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上レーザ構造のアニール温度依存性評価2017

    • Author(s)
      相川政輝,西山哲央, 鎌田直樹, 大貫雄也, 杉山滉一, 早坂夏樹,内田和希,韓旭, Gandhi Kallarasan P., 下村 和彦
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 神奈川
    • Year and Date
      2017-03-15
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上GaInAsPレーザ構造のX線回折評価2017

    • Author(s)
      杉山滉一, 西山哲央, 鎌田直樹, 大貫雄也, 韓旭, Periyanayagam Gandhi Kallarasan, 相川政輝, 早坂夏樹, 内田和希, 下村和彦
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜, 神奈川
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] Annealing temperature dependence of GaInAsP LD characteristics on InP/Si substrate fabricated by wafer direct bonding2017

    • Author(s)
      Y. Onuki, T. Nishiyama, N. Kamada, X. Han, Gandhi Kallarasan P., M. Aikawa, K. Uchida, H. Sugiyama, N. Hayasaka, and K. Shimomura
    • Organizer
      Compound Semiconductor Week 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] Lasing characteristics of MOVPE grown 1.5µm GaInAsP LD using directly bonded InP/Si substrate2017

    • Author(s)
      N. Hayasaka, T. Nishiyama, Y. Onuki, N. Kamada, X. Han, Gandhi Kallarasan P., K. Uchida, H. Sugiyama, M. Aikawa, and K. Shimomura
    • Organizer
      2017 5th International Workshop on Low Temperature Bonding for 3D Integration
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] Room temperature lasing operation of 1.5µm GaInAsP LD on InP/Si substrate2017

    • Author(s)
      P. Gandhi Kallarasan, N. Kamada, Y. Onuki, K. Uchida, H. Sugiyama, N. Hayasaka, M. Aikawa, and K. Shimomura
    • Organizer
      第78回応用物理学秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板を用いたGaInAsPレーザの試作2016

    • Author(s)
      西山哲央, 松本恵一, 岸川純也, 大貫雄也, 鎌田直樹, 下村和彦
    • Organizer
      電子情報通信学会技術研究報告
    • Place of Presentation
      機械振興会館, 東京
    • Year and Date
      2016-06-17
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] Integration of GaInAsP Laser Diode on Direct-Bonded Thin Film InP-Si Substrate2016

    • Author(s)
      G. Kallarasan, T. Nishiyama, K. Naoki, Y. Onuki and K. Shimomura
    • Organizer
      第77回応用物理学学術講演会
    • Place of Presentation
      朱鷺メッセ, 新潟
    • Year and Date
      2016-09-16
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 自己触媒VLS法によるn-InP/i-GaInAs/p-InPコアシェルナノワイヤの電気特性評価2016

    • Author(s)
      朝倉啓太, 荻野雄大, 高野紘平, 和保孝夫, 下村和彦
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] Low temperature lasing characteristics of GaInAsP double-hetero laser integrated on InP/Si substrate using direct wafer bonding2016

    • Author(s)
      T. Nishiyama, K. Matsumoto, J. Kishikawa, T. Sukigara, Y. Onuki, N. Kamada, T. Kanke, and K. Shimomura
    • Organizer
      21st Optoelectonics and Communications Conference (OECC/PS 2016)
    • Place of Presentation
      TOKI Messe Niigata Convention Center, Japan
    • Year and Date
      2016-07-05
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上結晶成長膜のInPテンプレート膜厚依存性2016

    • Author(s)
      大貫雄也, 西山哲央, 鎌田直樹, 韓旭, 相川政輝, 内田和希, 杉山滉一, 下村和彦
    • Organizer
      第77回応用物理学学術講演会
    • Place of Presentation
      朱鷺メッセ, 新潟
    • Year and Date
      2016-09-14
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上InAs量子ドットの成長2016

    • Author(s)
      鎌田直樹, 鋤柄俊樹, 西山哲央, 大貫雄也, 松本恵一, 下村 和彦
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス
    • Year and Date
      2016-03-21
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上GaInAsPダブルヘテロレーザの発振特性2016

    • Author(s)
      鎌田直樹, 西山哲央, 大貫雄也, 韓旭, 下村和彦
    • Organizer
      第77回応用物理学学術講演会
    • Place of Presentation
      朱鷺メッセ, 新潟
    • Year and Date
      2016-09-14
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上結晶成長膜の接合強度およびPL強度の圧力依存性評価2016

    • Author(s)
      大貫雄也, 松本恵一, 岸川純也, 西山哲央, 鎌田直樹, 下村和彦
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス
    • Year and Date
      2016-03-21
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板上GaInAsP-InPダブルヘテロレーザの低温発振特性2016

    • Author(s)
      西山哲央, 松本恵一, 岸川純也, 鋤柄俊樹, 大貫雄也, 鎌田直樹, 菅家智一,下村和彦
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス
    • Year and Date
      2016-03-20
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 自己触媒VLS法によるInP/GaInAs/InPコアマルチシェルナノワイヤの光学特性評価2016

    • Author(s)
      高野紘平, 荻野雄大, 朝倉啓太, 和保孝夫, 下村和彦
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス
    • Year and Date
      2016-03-20
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] Lasing characteristics of GaInAsP laser diode grown on directly bonded InP/Si substrate2016

    • Author(s)
      T. Nishiyama, K. Matsumoto, J. Kishikawa, Y. Onuki, N. Kamada, and K. Shimomura
    • Organizer
      The 25th International Semiconductor Laser Conference (ISLC2016)
    • Place of Presentation
      Kobe Meriken Park Oriental Hotel, Japan
    • Year and Date
      2016-09-15
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] InP薄膜-シリコン基板への半導体結晶成長を用いた光デバイス集積化技術の検討2016

    • Author(s)
      下村和彦
    • Organizer
      第4回集積光デバイスと応用技術研究会
    • Place of Presentation
      NTT厚木研究開発センタ, 神奈川
    • Year and Date
      2016-08-05
    • Invited
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] S-K Growth of InAs quantum dots on directly-bonded InP/Si substrate using MOVPE2016

    • Author(s)
      N. Kamada, T. Sukigara, K. Matsumoto, J. Kishikawa, T. Nishiyama, Y. Onuki and K. Shimomura
    • Organizer
      21st Optoelectonics and Communications Conference (OECC/PS 2016)
    • Place of Presentation
      TOKI Messe Niigata Convention Center, Japan
    • Year and Date
      2016-07-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si基板接合界面における電気特性評価2015

    • Author(s)
      岸川純也, 松本恵一, 下村 和彦
    • Organizer
      第76回応用物理学学術講演会
    • Place of Presentation
      名古屋国際会議場, 名古屋
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 自己触媒VLS法によるInP/GaInAs/InPコアシェルナノワイヤのTMI供給量依存性2015

    • Author(s)
      朝倉啓太, 荻野雄大, 高野紘平, 和保孝夫, 下村和彦
    • Organizer
      第76回応用物理学学術講演会
    • Place of Presentation
      名古屋国際会議場, 名古屋
    • Year and Date
      2015-09-15
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] Characteristics of film InP layer and Si substrate bonded interface bonded by wafer direct bonding2015

    • Author(s)
      K. Matsumoto, Y. Kanaya, J. Kishikawa, and K. Shimomura
    • Organizer
      11th Conference on Lasers and Electro-Optics (CLEO-PR 2015)
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2015-08-25
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] p変調ドープInAs/InPダブルキャップ量子ドット構造のドーピング濃度依存性2015

    • Author(s)
      鋤柄俊樹, 山元雄太, 西山哲央, 下村和彦
    • Organizer
      第76回応用物理学学術講演会
    • Place of Presentation
      名古屋国際会議場, 名古屋
    • Year and Date
      2015-09-16
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP層を用いた異種基板上III-V族半導体発光デバイスの集積2015

    • Author(s)
      松本恵一, 金谷佳則, 岸川純也, 下村和彦
    • Organizer
      電子情報通信学会技術研究報告
    • Place of Presentation
      機械振興会館, 東京
    • Year and Date
      2015-06-19
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] GaInAs/InP MQW light-emitting diode fabricated on wafer bonded InP/Quartz substrate2015

    • Author(s)
      K. Matsumoto, M. Takasu, Y. Kanaya, J. Kishikawa, and K. Shimomura
    • Organizer
      Conference on Lasers and Electro-Optics (CLEO 2015)
    • Place of Presentation
      San Jose, CA, USA
    • Year and Date
      2015-05-15
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] Cavity length dependence on lasing characteristics of double-capped QDs laser2015

    • Author(s)
      T. Sukigara, Y. Yamamoto, T. Nishiyama, and K. Shimomura
    • Organizer
      11th Conference on Lasers and Electro-Optics (CLEO-PR 2015)
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2015-08-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 直接貼付InP/Si 基板上MOVPE 法によるGaInAsP-InP ダブルヘテロレーザの集積2015

    • Author(s)
      松本恵一, 金谷佳則, 岸川純也, 山元雄太, 鋤柄俊樹, 西山哲央, 下村和彦
    • Organizer
      第76回応用物理学学術講演会
    • Place of Presentation
      名古屋国際会議場, 名古屋
    • Year and Date
      2015-09-16
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] Epitaxial Grown GaInAsP-InP laser on wafer bonded InP/Si substrate2015

    • Author(s)
      K. Matsumoto, Y. Kanaya, J. Kishikawa, Y. Yamamoto, T. Sukigara, T. Nishiyama, and K. Shimomura
    • Organizer
      42nd International Symposium on Compound Semiconductors (ISCS 2015)
    • Place of Presentation
      Santa Barbara, CA, USA
    • Year and Date
      2015-07-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] 自己触媒VLS法によるInP/GaInAs/InPコアシェルナノワイヤの光学特性評価2015

    • Author(s)
      荻野雄大, 朝倉啓太, 高野紘平, 和保孝夫, 下村和彦
    • Organizer
      第76回応用物理学学術講演会
    • Place of Presentation
      名古屋国際会議場, 名古屋
    • Year and Date
      2015-09-14
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] InP/Si直接貼付基板上へのInP系光デバイス集積化に関する研究2015

    • Author(s)
      下村和彦, 松本恵一
    • Organizer
      第23回シリコンフォトニクス研究会
    • Place of Presentation
      石川県政記念しいのき迎賓館, 金沢
    • Year and Date
      2015-12-10
    • Invited
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] InAs/InPダブルキャップ量子ドットレーザの閾値電流密度共振器長依存性2015

    • Author(s)
      西山哲央, 鋤柄俊樹, 鎌田直樹, 下村和彦
    • Organizer
      第76回応用物理学学術講演会
    • Place of Presentation
      名古屋国際会議場, 名古屋
    • Year and Date
      2015-09-14
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] PL emission of InP/GaInAs/InP core-multishell NWs grown by self-catalytic VLS mode2015

    • Author(s)
      T. Ogino, K. Asakura, T. Waho, and K. Shimomura
    • Organizer
      11th Conference on Lasers and Electro-Optics (CLEO-PR 2015)
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2015-08-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06029
  • [Presentation] nAs積層量子ドットLEDにおける各層のピーク波長制御による広帯域化2014

    • Author(s)
      鋤柄俊樹, 吉川翔平, 山内雅之, 山元雄太, 下村和彦
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(17p-PA2-3)
    • Year and Date
      2014-03-17
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] InAs積層量子ドットLEDの注入電流に対する各層の発光特性の評価2013

    • Author(s)
      吉川翔平, 山内雅之, 山元雄太, 下村和彦
    • Organizer
      第74回応用物理学学術講演会
    • Place of Presentation
      同志社大学(19a-P2-2)
    • Year and Date
      2013-09-19
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] Broadband and flat-topped spectrum of InAs/InP QDs arrayed waveguide LED2013

    • Author(s)
      S. Yoshikawa, T. Saegusa, Y. Iwane, M. Yamauchi, K.Shimomura
    • Organizer
      40th International Symposium on Compound Semiconductors
    • Place of Presentation
      Kobe, Japan(TuC1-6)
    • Year and Date
      2013-05-21
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] Wide energy level control of InAs QDs using double-capping procedure by MOVPE2013

    • Author(s)
      M. Yamauchi, Y. Iwane, S. Yoshikawa, Y. Yamamoto, K. Shimomura
    • Organizer
      25th International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Kobe, Japan(MoPI-5)
    • Year and Date
      2013-05-20
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 選択成長およびダブルキャップ法を用いたInAs量子ドットアレイLEDのフラットトップスペクトル2013

    • Author(s)
      吉川翔平, 三枝知充, 岩根優人, 山内雅之, 下村和彦
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(29p-B4-9)
    • Year and Date
      2013-03-29
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 選択成長およびダブルキャップ法を用いたInAs量子ドットアレイLEDのPL特性2012

    • Author(s)
      三枝知充, 岩根優人, 吉田圭佑, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第73回応用物理学学術講演会
    • Place of Presentation
      愛媛大学(13a-PA8-4)
    • Year and Date
      2012-09-13
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] V/III ratio of Ga0.7In0.3As buffer layer dependence on InAs/InP QDs structure2012

    • Author(s)
      Y.Iwane, T. Saegusa, K. Yoshida, M. Yamauchi, S.Yoshikawa, K. Shimomura
    • Organizer
      16th International Conferenece on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      Busan, Korea(WeP049)
    • Year and Date
      2012-05-23
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 3層InAs量子ドットアレイLEDのELスペクトルの解析2012

    • Author(s)
      三枝知充, 岩根優人, 吉田圭佑, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(17p-GP12-5)
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] GaAs(111) B, GaAs(100), InP(111) B, InP(100)基板におけるAu微粒子を用いたInAsナノワイヤ成長2012

    • Author(s)
      村上新, 船山裕晃, 下村和彦, 和保孝夫
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      東京
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21560362
  • [Presentation] MOVPE選択成長およびダブルキャップ法を用いたアレイ導波路型InAs量子ドットLEDのスペクトル特性2012

    • Author(s)
      吉川翔平, 三枝知充, 岩根優人, 下村和彦
    • Organizer
      2012年電子情報通信学会ソサイエティ大会
    • Place of Presentation
      富山大学(C-4-26)
    • Year and Date
      2012-09-12
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] GaAs(111)B,GaAs(100),InP(111)B,InP(100)基板におけるAu微粒子を用いたInAsナノワイヤ成長2012

    • Author(s)
      村上新、船山裕晃、下村和彦、和保孝夫
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      東京
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21560362
  • [Presentation] Random switching of wavelength demultiplexed light in variable arrayed waveguide2011

    • Author(s)
      T. Makino, T. Tanimura, S. Yanagi, K. Shimomura
    • Organizer
      16th OptoElectronics and Communications Conference
    • Place of Presentation
      Kaohsiung, Taiwan(7P3_097)
    • Year and Date
      2011-07-07
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] InP基板上Ga0.69In0.31Asバッファー層を用いた選択成長InAs量子ドットの発光特性2011

    • Author(s)
      三枝知充, 川島史裕, 廣岡雅人, 下村和彦
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] GaxIn1-xAsセカンドキヤップ層を用いたダブルキャップ法InAs/InP量子ドットの発光特性および形状2011

    • Author(s)
      岩根優人, 三枝知充, 廣岡雅人, 川島史裕, 小冷亮太, 下村和彦
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] 階段型屈折率分布アレイ導波路構造におけるランダムスイッチング動作の数値解析2011

    • Author(s)
      牧野辰則, 谷村昂, 村上洋介, 青柳孝典, 下村和彦
    • Organizer
      第58回応用物理学関係連合講演会(24p-KA-2)
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Strain control using GaxIn1-xAs second cap layer during double-cap procedure in InAs / InP QDs structure2011

    • Author(s)
      M. Hirooka, F. Kawashima, Y.Iwane, T.Saegusa, K. Shimomura
    • Organizer
      23rd International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2011-05-24
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] InP基板上Ga0.69In0.31Asバッファー層を用いた選択成長InAs量子ドットの発光特性2011

    • Author(s)
      三枝知充, 川島史裕, 廣岡雅人, 下村和彦
    • Organizer
      第58回応用物理学関係連合講演会(27a-P8-6)
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Field-Assisted Self-Assembly of InAs Naonwires on Si substrate2011

    • Author(s)
      E. Takashima, H. Funayama, T. Waho, K. Shimomura, and W. Prost
    • Organizer
      9th Topical Workshop on Heterostructure Microelectronics (TWHM 2011)
    • Place of Presentation
      Gifu, Japan
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 階段型屈折率分布アレイ導波路構造におけるランダムスイッチング動作の数値解析2011

    • Author(s)
      牧野辰則, 谷村昂, 村上洋介, 青柳孝典, 下村和彦
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] GaxIn1-xAsセカンドキャップ層を用いたダブルキャップ法InAs/InP量子ドットの発光特性および形状2011

    • Author(s)
      岩根優人, 三枝知充, 廣岡雅人, 川島史裕, 小冷亮太, 下村和彦
    • Organizer
      第58回応用物理学関係連合講演会(24p-BQ-12)
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Wavelength demultiplexing and carrier induced switching in variable index arrayed waveguides2011

    • Author(s)
      T. Aoyagi, T. Tanimura, S. Yanagi, Y. Yamazaki and K. Shimomura
    • Organizer
      16th OptoElectronics and Communications Conference (OECC2011)
    • Place of Presentation
      Kaohsiung, Taiwan
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] Broadband QDs array LED using selective MOVPE growth2011

    • Author(s)
      K. Shimomura
    • Organizer
      BIT's 1st Annual World Congress of Nano-S&T
    • Place of Presentation
      Dalian, China
    • Year and Date
      2011-10-23
    • Invited
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] Field-Assisted Self-Assembly of InAs Naonwires on Si substrate2011

    • Author(s)
      Eisuke Takashima, Hiroaki Funayama, Takao Waho, Kazuhiko Shimomura, Werner Prost
    • Organizer
      9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)
    • Place of Presentation
      Gifu, Japan
    • Data Source
      KAKENHI-PROJECT-21560362
  • [Presentation] Broadband QDs array LED using selective MOVPE growth2011

    • Author(s)
      K. Shimomura
    • Organizer
      BIT's 1st Annual World Congress of Nano-S&T(招待講演)
    • Place of Presentation
      Dalian, China
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] Switching characteristics in variable index arrayed waveguides using triangular heater2011

    • Author(s)
      S. Yanagi, Y. Murakami, T. Aoyagi, Y. Yamazaki and K. Shimomura
    • Organizer
      16th OptoElectronics and Communications Conference (OECC2011)
    • Place of Presentation
      Kaohsiung, Taiwan
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 三角ヒーターを用いたGaInAs/InP MQW波長光スイッチの消費電力低減2011

    • Author(s)
      柳智史, 山崎勇輝, 村上洋介, 下村和彦
    • Organizer
      第58回応用物理学関係連合講演会(24p-KA-3)
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Switching characteristics in variable index arrayed waveguides using triangular heater2011

    • Author(s)
      S. Yanagi, Y. Murakami, T. Aoyagi, Y. Yamazaki K. Shimomura
    • Organizer
      16th OptoElectronics and Communications Conference
    • Place of Presentation
      Kaohsiung, Taiwan(7E2_3)
    • Year and Date
      2011-07-07
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] Random switching of wavelength demultiplexed light in variable arrayed waveguide2011

    • Author(s)
      T. Makino, T. Tanimura, S. Yanagi, and K. Shimomura
    • Organizer
      16th OptoElectronics and Communications Conference (OECC2011)
    • Place of Presentation
      Kaohsiung, Taiwan
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] Strain control using GaxIn1-xAs second cap layer during double-cap procedure in InAs / InP QDs structure2011

    • Author(s)
      M. Hirooka, F. Kawashima, Y.Iwane, T.Saegusa, and K. Shimomura
    • Organizer
      23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011)
    • Place of Presentation
      Berlin, Germany
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 三角ヒーターを用いたGaInAs/InP MQW波長光スイッチの消費電力低減2011

    • Author(s)
      柳智史, 山崎勇輝, 村上洋介, 下村和彦
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] キャリア注入型アレイ導波路におけるスイッチング特性(II)2011

    • Author(s)
      青柳孝典, 谷村昂, 村上洋介, 下村和彦
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] キャリア注入型アレイ導波路におけるスイッチング特性(II)2011

    • Author(s)
      青柳孝典, 谷村昂, 村上洋介, 下村和彦
    • Organizer
      第58回応用物理学関係連合講演会(24p-KA-1)
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] InAs/InP QDs grown by selective MOVPE growth using double-cap procedure for broadband LED improved p-cladding layer2011

    • Author(s)
      Y. Iwane, F. Kawashima, M. Hirooka, T. Saegusa, and K. Shimomura
    • Organizer
      38th International Symposium on Compound Semiconductors (ISCS 2011)
    • Place of Presentation
      Berlin, Germany
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] InAs/InP QDs grown by selective MOVPE growth using double-cap procedure for broadband LED improved p-cladding layer2011

    • Author(s)
      Y. Iwane, F. Kawashima, M. Hirooka, T. Saegusa, K. Shimomura
    • Organizer
      38th International Symposium on Compound Semiconductors
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2011-05-23
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] Field-Assisted Self-Assembly of InAs Naonwires on Si substrate2011

    • Author(s)
      Eisuke Takashima, Hiroaki Funayama, Takao Waho, Kazuhiko Shimomura, and Werner Prost
    • Organizer
      9th Topical Workshop on Heterostructure Microelectronics(TWHM2011)
    • Place of Presentation
      Gifu, Japan
    • Data Source
      KAKENHI-PROJECT-21560362
  • [Presentation] Numerical calculation of wavelength switching in index-varied array waveguide2010

    • Author(s)
      T.Tanimura, T.Sugio, Y.Murakami,T.Aoyagi, K.Shimomura
    • Organizer
      15th OptoElectronics and Communications Conference (OECC2010)(7P-64)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Selective MOVPE growth of InAs QDs using double-cap procedure2010

    • Author(s)
      F.Kawashima, R.Kobie, Y.Suzuki, K.Shimomura
    • Organizer
      The 16th International Conference on Crystal Growth (ICCG-16)
    • Place of Presentation
      Beijing, China(Invited)
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] キャリア注入による階段型屈折率分布アレイ導波路のスイッチング特性2010

    • Author(s)
      杉尾崇行, 青柳孝典, 谷村昂, 下村和彦
    • Organizer
      第57回応用物理学関係連合講演会(17a-N-3)
    • Place of Presentation
      東海大学
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] InAs/InP QDs broadband LED using selective MOVPE growth and double-cap procedure2010

    • Author(s)
      K.Shimomura, Y.Suzuki, Y.Saito, F.Kawashima
    • Organizer
      22nd Indium Phosphide and Related Materials conference (IPRM 2010)
    • Place of Presentation
      Takamatsu, Japan(Invited)
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Ti/Auヒーターを用いた選択成長アレイ導波路における波長スイッチング特性2010

    • Author(s)
      村上洋介, 谷村昂, 青柳孝典, 下村和彦
    • Organizer
      第71回応用物理学学術講演会(14p-G-2)
    • Place of Presentation
      長崎大学
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] キャリア注入による階段型屈折率分布アレイ導波路のスイッチング特性2010

    • Author(s)
      杉尾崇行, 青柳孝典, 谷村昂, 下村和彦
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学、神奈川
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Wavelength switching in variable index arrayed waveguides using Ti/Au thin film heater2010

    • Author(s)
      Y.Murakami, T.Sugio, T.Tanimura, T.Makino, K.Shimomura
    • Organizer
      15th OptoElectronics and Communications Conference (OECC2010)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] witching characteristics in variable refractive-index waveguide array by carrier injection2010

    • Author(s)
      T.Sugio, T.Aoyagi, T.Tanimura, Y.Murakami, K.Shimomura
    • Organizer
      22nd Indium Phosphide and Related Materials conference (IPRM 2010)(WeP21)
    • Place of Presentation
      Takamatsu,Japan
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Switching characteristics in variable refractive-index waveguide array by carrier injection2010

    • Author(s)
      T.Sugio, T.Aoyagi, T.Tanimura, Y.Murakami, K.Shimomura
    • Organizer
      22nd Indium Phosphide and Related Materials conference (IPRM 2010)
    • Place of Presentation
      Takamatsu, Japan
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Numerical calculation of wavelength switching in index-varied array waveguide2010

    • Author(s)
      T.Tanimura, T.Sugio, Y.Murakami, T.Aoyagi, K.Shimomura
    • Organizer
      15th OptoElectronics and Communications Conference (OECC2010)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Wavelength switching in variable index arrayed waveguides using Ti/Au thin film heater2010

    • Author(s)
      Y.Murakami, T.Sugio, T.Tanimura, T.Makino, K.Shimomura
    • Organizer
      15th OptoElectronics and Communications Conference (OECC2010)(8E1-5)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Selective MOVPE growth of InAs QDs using double-cap procedure2010

    • Author(s)
      F.Kawashima, R.Kobie, Y.Suzuki, K.Shimomura
    • Organizer
      The 16th International Conference on Crystal Growth (ICCG-16)(HJ1)
    • Place of Presentation
      Beijing, China(Invited)
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] InAs/InP QDs broadband LED using selective MOVPE growth and double-cap procedure2010

    • Author(s)
      K.Shimomura, Y.Suzuki, Y.Saito, F.Kawashima
    • Organizer
      22nd Indium Phosphide and Related Materials conference (IPRM 2010)(TuA2-3)
    • Place of Presentation
      Takamatsu, Japan(Invited)
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] LP-MOVPEによる選択成長とダブルキャップ法およびバッファ層組成変化を用いた広帯域量子ドットLEDの作製2010

    • Author(s)
      川島史裕, 鈴木勇介, 井上朋紀, 下村和彦
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学、神奈川
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] LP-MOVPEによる選択成長とダブルキャップ法およびバッファ層組成変化を用いた広帯域量子ドットLEDの作製2010

    • Author(s)
      川島史裕, 鈴木勇介, 井上朋紀, 下村和彦
    • Organizer
      第57回応用物理学関係連合講演会(19p-E-18)
    • Place of Presentation
      東海大学
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Growth of InAs Nanowires by MOVPE2010

    • Author(s)
      下村和彦
    • Organizer
      NW-CMOS Workshop
    • Place of Presentation
      Toyama University
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] 階段型屈折率分布アレイ導波路構造波長選択スイッチにおけるスイッチング動作の数値解析2010

    • Author(s)
      谷村昂, 杉尾崇行, 村上洋介, 青柳孝典, 下村和彦
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学、神奈川
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] 階段型屈折率分布アレイ導波路構造波長選択スイッチにおけるスイッチング動作の数値解析2010

    • Author(s)
      谷村昂, 杉尾崇行, 村上洋介, 青柳孝典, 下村和彦
    • Organizer
      第57回応用物理学関係連合講演会(17a-N-2)
    • Place of Presentation
      東海大学
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] 熱光学効果型GaInAs/InP MQW波長選択スイッチの消費電力低減2010

    • Author(s)
      村上洋介, 杉尾崇行, 谷村昂, 下村和彦
    • Organizer
      第57回応用物理学関係連合講演会(17a-N-1)
    • Place of Presentation
      東海大学
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] 熱光学効果型GaInAs/InP MQW波長選択スイッチの消費電力低減2010

    • Author(s)
      村上洋介, 杉尾崇行, 谷村昂, 下村和彦
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学、神奈川
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] 屈折率分布導波路アレイを用いた電流注入型波長選択スイッチの作製2009

    • Author(s)
      杉尾崇行, 岩崎寛弥, 谷村昴, 津布久正浩, 下村和彦
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学、茨城
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] 熱光学効果型GaInAs/InP MQW波長選択スイッチの4波長スイッチング特性2009

    • Author(s)
      村上洋介, 清水優, 朱蕾, 杉尾崇行, 下村和彦
    • Organizer
      電子情報通信学会技術研究報告
    • Place of Presentation
      機械振興会館、東京
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] 熱光学効果型波長選択スイッチのスイッチング特性2009

    • Author(s)
      村上洋介, 清水優, 朱蕾, 竹内孝太朗, 下村和彦
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学、茨城
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Wavelength selective switch using GaInAs/InP MQW variable index arrayed waveguides2009

    • Author(s)
      Y.Shimizu, H.Iwasaki, T.Sugio, Y.Murakami, K.Shimomura
    • Organizer
      Conference on Lasers and Electro-Optics International Quantum Electronics Conference (CLEO/IQEC 2009)(JTuD48)
    • Place of Presentation
      Baltimore, USA
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] 熱光学効果型GaInAs/InP MQW波長選択スイッチの偏波依存性2009

    • Author(s)
      村上洋介, 杉尾崇行, 谷村昴, 下村和彦
    • Organizer
      第70回応用物理学学術講演会
    • Place of Presentation
      富山大学、富山
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Waveguide design of variable refractive-index waveguide array demultiplexer and wavelength selective switch2009

    • Author(s)
      H.Iwasaki, T.Sugio, T.Tanimura, K.Takeuchi, K.Shimomura
    • Organizer
      The 14th OptoElectronics and Communications Conference (OECC 2009)(ThLP31)
    • Place of Presentation
      Hong Kong
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Waveguide design of variable refractive-index waveguide array demultiplexer and wavelength selective switch2009

    • Author(s)
      H.Iwasaki, T.Sugio, T.Tanimura, K.Takeuchi, K.Shimomura
    • Organizer
      The 14th OptoElectronics and Communications Conference(OECC 2009)
    • Place of Presentation
      Hong Kong
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] ダブルキャップ法を用いたMOVPE選択成長によるInAs量子ドット広帯域LED2009

    • Author(s)
      鈴木勇介, 川島史裕, 斉藤泰仁, 下村和彦
    • Organizer
      電子情報通信学会技術研究報告
    • Place of Presentation
      機械振興会館、東京
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Wavelength selective switch using GaInAs/InP MQW variable index arrayed waveguides2009

    • Author(s)
      Y.Shimizu, H.Iwasaki, T.Sugio, Y.Murakami, K.Shimomura
    • Organizer
      The 14th OptoElectronics and Communications Conference(OECC 2009)
    • Place of Presentation
      Hong Kong
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] ダブルキャップ法lnAs/lnP量子ドットの歪制御層Ga組成依存性2009

    • Author(s)
      廣岡 雅人, 赤石 昌隆, 斉藤 泰仁, 下村 和彦
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学、茨城
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] InP(001)基板上におけるMOVPE選択成長とダブルキャップ法を用いた広帯域量子ドットLEDの作製2009

    • Author(s)
      鈴木勇介, 井上朋紀, 川島史裕, 広岡雅人, 下村和彦
    • Organizer
      第70回応用物理学学術講演会
    • Place of Presentation
      富山大学、富山
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] 屈折率分布アレイ型波長選択スイッチにおけるクロストーク特性の改善2009

    • Author(s)
      杉尾崇行, 谷村昴, 村上洋介, 下村和彦
    • Organizer
      第70回応用物理学学術講演会
    • Place of Presentation
      富山大学、富山
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] 階段型屈折率分布アレイ導波路を用いた波長選択スイッチの光導波解析2009

    • Author(s)
      谷村昴, 杉尾崇行, 村上洋介, 下村和彦
    • Organizer
      第70回応用物理学学術講演会
    • Place of Presentation
      富山大学、富山
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] InAs/InP QDs using selective MOVPE and double-cap procedure2009

    • Author(s)
      下村和彦
    • Organizer
      NW-CMOS Workshop
    • Place of Presentation
      Sophia University
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] InAs QDs broadband LED using double-cap procedure and selective MOVPE growth2009

    • Author(s)
      Y.Saito, M.Akaishi, T.Inoue, Y.Suzuki, F.Kawashima, K.Shimomura
    • Organizer
      The 14th OptoElectronics and Communications Conference(OECC 2009)
    • Place of Presentation
      Hong Kong
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Switching characteristics in variable index arrayed waveguide wavelength selective switch2009

    • Author(s)
      村上洋介, 清水優, 杉尾崇行, 下村和彦
    • Organizer
      The 14th OptoElectronics and Communications Conference(OECC 2009)
    • Place of Presentation
      Hong Kong
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] 階段型屈折率分布アレイ導波路を用いた波長選択スイッチのBPM解析と試作2009

    • Author(s)
      杉尾崇行, 岩崎寛弥, 谷村昂, 村上洋介, 下村和彦
    • Organizer
      電子情報通信学会技術研究報告
    • Place of Presentation
      機械振興会館、東京
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] InAs QDs broadband LED using double-cap procedure and selective MOVPE growth2009

    • Author(s)
      Y.Saito, M.Akaishi, T.Inoue, Y.Suzuki, F. Kawashima, K.Shimomura
    • Organizer
      The 14th OptoElectronics and Communications Conference (OECC 2009)(WI1)
    • Place of Presentation
      Hong Kong
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Switching characteristics in variable index arrayed waveguide wavelength selective switch2009

    • Author(s)
      Y.Murakami, Y.Shimizu, T.Sugio, K.Shimomura
    • Organizer
      The 14th OptoElectronics and Communications Conference (OECC 2009)(ThA3)
    • Place of Presentation
      Hong Kong
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] lnP(001)基板上におけるInAs量子ドットの電流注入による屈折率変化量2008

    • Author(s)
      杉尾崇行, 岩崎寛弥, 清水優, 茂木瑞穂, 下村和彦
    • Organizer
      第69回応用物理学学術講演会
    • Place of Presentation
      中部大学、愛知
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Wideband wavelength electro luminescence from InAs/InP QDs using double-cap procedure by MOVPE selective area growth2008

    • Author(s)
      Y. Saito, T. Okawa, M. Akaishi, K. Shimomura
    • Organizer
      14th International Conference on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      Metz, France
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] ダブルキャップ法におけるInAs量子ドットのGaxInl-xAsセカンドキャップ層依存性2008

    • Author(s)
      赤石昌隆, 斉藤泰仁, 下村和彦
    • Organizer
      第69回応用物理学学術講演会
    • Place of Presentation
      中部大学、愛知
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Carrier induced refractive index change in InAs quantum dots on InP (001) substrates2008

    • Author(s)
      T.Sugio, M.Akaishi, K.Shimomura
    • Organizer
      2008 International Nano-Optoelectronics Workshop (iNOW 2008)(P28)
    • Place of Presentation
      Lake Saiko, Japan(Poster Session 4)
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Carrier induced refractive index change in InAs quantum dots on InP (001) substrates2008

    • Author(s)
      T. Sugio, M. Akaishi, K. Shimomura
    • Organizer
      2008 International Nano-Optoelectronics Workshop (iNOW 2008)
    • Place of Presentation
      Lake Saiko, Japan
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Selective MOVPE grown semiconductor optical waveguide array and its application for optical devices2008

    • Author(s)
      下村和彦
    • Organizer
      2008 International Nano-Optoelectronics Workshop (iNOW 2008)
    • Place of Presentation
      Lake Saiko, Japan(Session Sa1)(Invited)
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Dependency of InAs QDs using GaxIn1-xAs second cap layer in the Double-cap procedure2008

    • Author(s)
      M.Akaishi, Y.Saito, K.Shimomura
    • Organizer
      2008 International Nano-Optoelectronics Workshop (iNOW 2008)(P14)
    • Place of Presentation
      Lake Saiko, Japan(Poster Session 3)
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Wideband wavelength electro luminescence from InAs/InP QDs using double-cap procedure by MOVPE selective area growth2008

    • Author(s)
      Y.Saito, T.Okawa, M.Akaishi, K.Shimomura
    • Organizer
      14th International Conference on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      Metz, France(Th-B1.2)
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] InAs/InP QDs using GaxIn1-xAs cap layer in double-cap procedure by MOVPE selective area growth2008

    • Author(s)
      M.Akaishi, T.Okawa, Y.Saito, K.Shimomura
    • Organizer
      14th International Conference on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      Metz, France(Tu-P.1)
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Selective MOVPE grown semiconductor optical waveguide array and its application for optical devices2008

    • Author(s)
      K. Shimomura
    • Organizer
      2008 International Nano-Optoelectronics Worksho (iNOW 2008)
    • Place of Presentation
      Lake Saiko, Japan
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] 量子ドットアレイ導波路の作製とデバイス応用2008

    • Author(s)
      斉藤泰仁, 赤石昌隆, 大川達也, 下村 和彦
    • Organizer
      電子情報通信学会光エレクトロニクス研究会
    • Place of Presentation
      東京
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] InAs/InP QDs using GaxInl-xAs cap layer in double-cap procedure by MOVPE selective area growth2008

    • Author(s)
      M. Akaishi, T. Okawa, Y. Sai to, K. Shimomura
    • Organizer
      14th International Conference on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      Metz, France
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] 選択成長導波路アレイを用いた熱光学効果型波長スイッチのスイッチング特性2008

    • Author(s)
      清水優, 岩崎寛弥, 杉尾崇行, 下村和彦
    • Organizer
      第69回応用物理学学術講演会
    • Place of Presentation
      中部大学、愛知
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Dependency of InAs QDs using GaxInl-xAs second cap layer in the Double-cap procedure2008

    • Author(s)
      M. Akaishi, Y. Saito., K. Shimomura
    • Organizer
      2008 International Nano-Optoelectronics Workshop (iNOW 2008)
    • Place of Presentation
      Lake Saiko, Japan
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Switching characteristics in wavelength switch using selectively grown waveguide array by thermooptic effect2008

    • Author(s)
      H. Iwasaki, Y. Shimizu, K. Shimomura
    • Organizer
      2008 International Nano-Optoelectronics Workshop (iNOW 2008)
    • Place of Presentation
      Lake Saiko, Japan
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] Switching characteristics in wavelength switch using selectively grown waveguide array by thermooptic effect2008

    • Author(s)
      11.H. Iwasaki, Y.Shimizu, K.Shimomura
    • Organizer
      2008 International Nano-Optoelectronics Workshop (iNOW 2008)(P30)
    • Place of Presentation
      Lake Saiko,Japan(Poster Session 3)
    • Data Source
      KAKENHI-PROJECT-20560334
  • [Presentation] 選択成長3層InAs量子ドットアレイLEDのPLスペクトルの解析

    • Author(s)
      三枝知充, 岩根優人, 吉田圭佑, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第71回応用物理学学術講演会
    • Place of Presentation
      山形大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] MOVPEによるGa間欠供給GaInAs量子ドットの発光特性

    • Author(s)
      山内雅之, 吉川翔平, 山元雄太, 下村和彦
    • Organizer
      第74回応用物理学学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 電界効果GaInAs/InP MQW波長スイッチの2ポート間スイッチング特性

    • Author(s)
      柳智史,青柳孝典,谷村昂,下村和彦
    • Organizer
      第71回応用物理学学術講演会
    • Place of Presentation
      山形大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] GaInAsP系結晶再成長のための直接貼付InP/Si基板接合界面における電気特性評価

    • Author(s)
      金谷佳則, 松本恵一, Zhang Xinxin, 下村和彦,
    • Organizer
      第74回応用物理学学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] MOVPE growth of InAs/InP QDs on directlybonded InP/Si substrate

    • Author(s)
      K. Matsumoto, X. Zhang, Y. Kanaya, and K. Shimomura
    • Organizer
      25th International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Kobe, Japan
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 選択成長およびダブルキャップ法を用いたInAs量子ドットアレイLEDのPL特性

    • Author(s)
      三枝知充, 岩根優人, 吉田圭佑, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第73回応用物理学学術講演会
    • Place of Presentation
      愛媛大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] GaAs(111)B,GaAs(100),InP(111)B,InP(100)基板におけるAu微粒子を用いたInAsナノワイヤ成長

    • Author(s)
      村上 新,船山 裕晃,下村 和彦,和保 孝夫
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 3元,4元キャップ層によるInAs/InP量子ドットの長波長発光

    • Author(s)
      山元雄太, 山内雅之, 吉川翔平, 鋤柄俊樹, 下村和彦
    • Organizer
      第74回応用物理学学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] InAs積層量子ドットLEDの注入電流に対する各層の発光特性の評価

    • Author(s)
      吉川翔平, 山内雅之, 山元雄太, 下村和彦
    • Organizer
      第74回応用物理学学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 直接貼付InPテンプレートを用いた異種基板上MOVPE結晶成長

    • Author(s)
      松本 恵一, 張 きんきん, 金谷 佳則, 下村 和彦
    • Organizer
      電子情報通信学会技術研究報告
    • Place of Presentation
      機械振興会館,東京
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 3層InAs量子ドットアレイLEDのELスペクトルの解析

    • Author(s)
      三枝知充, 岩根優人, 吉田圭佑, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 直接貼付InP/Si基板上InAs積層量子ドット構造

    • Author(s)
      岸川純也, 松本恵一, Zhang Xinxin, 金谷佳則, 下村和彦
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] MOVPE による低テーパを目指したInAs ナノワイヤのVLS 成長

    • Author(s)
      山内雅之, 村上新, 松本恵一, 船山裕晃, 下村和彦, 和保孝夫
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] Wide energy level control of InAs QDs using double-capping procedure by MOVPE

    • Author(s)
      M. Yamauchi, Y. Iwane, S. Yoshikawa, Y. Yamamoto, and K. Shimomura
    • Organizer
      25th International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Kobe, Japan
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] GaInAs/InP MQW選択成長アレイ導波路のキャリア注入時の屈折率変化量

    • Author(s)
      青柳 孝典,吉岡 政洋,柳 智史, 下村和彦
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] Selective MOVPE growth of GaInAs/InP MQW on directly-bonded InP/Si substrate

    • Author(s)
      K. Matsumoto, X. Zhang, Y. Kanaya, and K. Shimomura
    • Organizer
      Selective MOVPE growth of GaInAs/InP MQW on directly-bonded InP/Si substrate
    • Place of Presentation
      Kobe, Japan
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] ファーストキャップ層厚変化によるInAs/InPダブルキャップ量子ドットの長波長発光

    • Author(s)
      岩根優人, 三枝知充, 吉田圭佑, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第73回応用物理学学術講演会
    • Place of Presentation
      愛媛大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 電界効果GaInAs/InP MQWアレイ導波路型波長スイッチの動作特性と解析

    • Author(s)
      柳智史, 吉岡政洋, 下村和彦
    • Organizer
      2012年電子情報通信学会ソサイエティ大会
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] GaInAsP system growth on InP/SiO2-Si and SiO2 templates fabricated by direct wafer bonding

    • Author(s)
      K. Matsumoto , T. Makino , K. Kimura and K. Shimomura
    • Organizer
      39th International Symposium on Compound Semiconductors
    • Place of Presentation
      Santa Barbara, CA, USA
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] MOVPE選択成長およびダブルキャップ法を用いたアレイ導波路型InAs量子ドットLEDのスペクトル特性

    • Author(s)
      吉川翔平, 三枝知充, 岩根優人, 下村和彦
    • Organizer
      2012年電子情報通信学会ソサイエティ大会
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] InAs積層量子ドットLEDにおける各層のピーク波長制御による広帯域化

    • Author(s)
      鋤柄俊樹, 吉川翔平, 山内雅之, 山元雄太, 下村和彦
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 直接貼付InP/GaAs基板上GaInAsP系MOVPE成長

    • Author(s)
      金谷佳則, 松本恵一, 小冷亮太, 岸川純也, 下村和彦
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 直接貼付InP/Si基板上におけるGaInAs/InP系MOVPE結晶成長

    • Author(s)
      松本恵一,牧野辰則,喜村勝矢, 下村和彦
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] p-変調ドープInAs/InP量子ドット構造のEL特性

    • Author(s)
      山元 雄太, 山内 雅之, 吉川 翔平, 下村 和彦
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] V/III ratio of Ga0.7In0.3As buffer layer dependence on InAs/InP QDs structure

    • Author(s)
      Y.Iwane, T.Saegusa, K.Yoshida, M.Yamauchi, S.Yoshikawa, and K.Shimomura
    • Organizer
      16th International Conferenece on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI)
    • Place of Presentation
      Busan, Korea
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] Broadband and flat-topped spectrum of InAs/InP QDs arrayed waveguide LED

    • Author(s)
      S. Yoshikawa, T. Saegusa, Y. Iwane, M. Yamauchi, and K. Shimomura
    • Organizer
      40th International Symposium on Compound Semiconductors
    • Place of Presentation
      Kobe, Japan
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 自己触媒VLS法によるInPナノワイヤの成長温度依存性

    • Author(s)
      荻野雄大, 山内雅之, 山元雄太, 下村和彦, 和保孝夫
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] InAs 供給量増加によるInAs/InP ダブルキャップ量子ドットの長波長発光

    • Author(s)
      山元雄太, 岩根優人, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] GaInAs/InP MOVPE growth on directly bonded InP/Si substrate

    • Author(s)
      K. Matsumoto, T. Makino, K. Kimura, and K. Shimomura
    • Organizer
      16th International Conferenece on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI)
    • Place of Presentation
      Busan, Korea
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 直接貼付InP/SiO2-Si基板上におけるMOVPE結晶成長表面の面粗さ測定

    • Author(s)
      松本恵一, 牧野辰則, 喜村勝矢, 下村和彦
    • Organizer
      第73回応用物理学学術講演会
    • Place of Presentation
      愛媛大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] Au-assisted growth of InAs nanowires on GaAs(111)B,GaAs(100),InP(111)B,InP(100) by MOVPE

    • Author(s)
      S. Murakami , A. Funayama , K. Shimomura and T. Waho
    • Organizer
      39th International Symposium on Compound Semiconductors
    • Place of Presentation
      Santa Barbara, CA, USA
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] Si基板上直接貼付InP層の平坦性向上

    • Author(s)
      松本恵一, 小冷亮太,岸川純也, 下村和彦,
    • Organizer
      第61回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] Au微粒子を用いたGaAs(111)B基板上InAsナノワイヤのV/III比依存性

    • Author(s)
      村上新, 船山裕晃, 下村和彦, 和保孝夫
    • Organizer
      第73回応用物理学学術講演会
    • Place of Presentation
      愛媛大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 直接貼付InP/Si基板上GaInAs/InP MQW構造選択MOVPEにおけるPL波長シフト

    • Author(s)
      松本恵一, Zhang Xinxin, 金谷佳則, 下村和彦
    • Organizer
      第74回応用物理学学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] ヒーター長変化によるGaInAs/InP MQW波長光スイッチのスイッチング特性

    • Author(s)
      山崎勇輝, 村上洋介, 下村和彦
    • Organizer
      第71回応用物理学学術講演会
    • Place of Presentation
      山形大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 直接貼付InP/glass 基板上におけるGaInAs/InP 層のMOVPE 結晶成長

    • Author(s)
      松本恵一, Xinxin Zhang, 金谷佳則, 下村和彦
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] Ga0.9In0.1Asバッファ層を用いたInAs/InP量子ドットの発光特性

    • Author(s)
      岩根優人, 三枝知充, 吉田圭佑, 山内雅之, 吉川翔平, 下村和彦
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 電界効果GaInAs/InP MQW波長スイッチの電極構造改善

    • Author(s)
      柳 智史,青柳 孝典,谷村 昂,下村 和彦
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 選択成長InAs量子ドットアレイLEDのスペクトル解析

    • Author(s)
      山内雅之,三枝知充,岩根優人, 吉川翔平, 下村和彦
    • Organizer
      電子情報通信学会技術研究報告
    • Place of Presentation
      機械振興会館、東京
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 直接貼付InP/Si基板上へのGa0.2In0.8As量子ドット成長

    • Author(s)
      Xinxin Zhang, 松本恵一, 金谷佳則, 山内雅之, 下村和彦
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • [Presentation] 選択成長およびダブルキャップ法を用いたInAs量子ドットアレイLEDのフラットトップスペクトル

    • Author(s)
      吉川翔平, 三枝知充, 岩根優人, 山内雅之, 下村和彦
    • Organizer
      第60回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-23560412
  • 1.  WAHO Takao (90317511)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 4 results
  • 2.  YOSHIDA Junji (80393594)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 12 results

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