YANO Koji 矢野浩司

… Alternative Names

矢野浩司ヤノコウジ

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Researcher Number	90252014
Other IDs
Affiliation (Current)	2025: 山梨大学, 大学院総合研究部, 教授
Affiliation (based on the past Project Information) *help	2017 – 2023: 山梨大学, 大学院総合研究部, 教授 2014 – 2016: 山梨大学, 総合研究部, 教授 2012 – 2013: 山梨大学, 医学工学総合研究部, 教授 2010 – 2011: 山梨大学, 大学院・医学工学総合研究部, 教授 2007 – 2009: University of Yamanashi, 大学院・医学工学総合研究部, 准教授 … More 2006: 山梨大学, 医学工学総合研究部, 助教授 1999: 山梨大, 工学部, 助手 1997 – 1998: 山梨大学, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Power engineering/Power conversion/Electric machinery / Basic Section 21010:Power engineering-related / 電力工学・電気機器工学 / 電力工学・電気機器工学 Except Principal Investigator Basic Section 21050:Electric and electronic materials-related / Crystal engineering / Applied materials science/Crystal engineering
Keywords	Principal Investigator パワーデバイス / ワイドバンドギャップ / SiC / ワイドバンドギャップ半導体 / 電力工学 / パワーエレクトロニクス / 静電誘導トランジスタ / シリコンデバイス / スーパージャンクション / パワー半導体 … More / 半導体工学 / 実装 / パワーモジュール / JFET / SIT / 高速半導体スイッチ / パルスパワー / 炭化硅素 / 省エネルギー / 炭化珪素 / シリコンカーバイド / 半導体シミュレーション / パルスパワー電源 / 静電誘導型半導体デバイス … More Except Principal Investigator ｐｎ接合ダイオード / 酸化ニッケル / 酸化ガリウム / 高耐圧 / 電子デバイス / 電子・電気材料 / 結晶工学 / ヘテロ構造 / スイッチング / ヘテロ接合ダイオード / 結晶配向性 / 結晶配向 / infrared imaging / remote sensing / Joule's heat / Biot-Savart Law / inverse problem / eddy current / melt growth / Magnetic Czochralski method / ビオ・サバ-ルの法則 / ガリウム / 運動導体 / 非接触測定 / 誘起磁場 / 誘起電流 / 磁場卯加 / 融液からの成長 / 渦電流 / 赤外線画像 / 非接触計測 / ジュール熱 / ビオ・サバールの法則 / 逆問題 / 滑電流 / 融液成長 / 磁場印加成長 Less

シリコン超低損失スーパージャンクションダーリントン型パワーデバイスの研究開発Principal Investigator
- Principal Investigator
  
  矢野浩司
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21010:Power engineering-related
- Research Institution
  University of Yamanashi
全て酸化物からなる新規ワイドバンドギャップヘテロｐｎ接合ダイオードの特性改善
- Principal Investigator
  
  中込真二
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Ishinomaki Senshu University
Optically-driven SiC power switchesPrincipal Investigator
- Principal Investigator
  
  Yano Koji
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21010:Power engineering-related
- Research Institution
  University of Yamanashi
Development of the Basic technology to fabricate new wide-bandgap hetero pn junction based on all oxide
- Principal Investigator
  
  NAKAGOMI Shinji
- Project Period (FY)
  2017 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Ishinomaki Senshu University
3D stacked assembly of SiC cascode power devicesPrincipal Investigator
- Principal Investigator
  
  YANO Koji
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Power engineering/Power conversion/Electric machinery
- Research Institution
  University of Yamanashi
Pulse power application of SiC power devices with ultra-low loss and high switching speedPrincipal Investigator
- Principal Investigator
  
  YANO Koji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Power engineering/Power conversion/Electric machinery
- Research Institution
  University of Yamanashi
A new opwerating mode of SiC-buried gate static induction transistor with untra-low on-resistancePrincipal Investigator
- Principal Investigator
  
  YANO Koji
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Power engineering/Power conversion/Electric machinery
- Research Institution
  University of Yamanashi
Improvement in th e reli ability of super low power loss SiC static induction devicesPrincipal Investigator
- Principal Investigator
  
  YAN0 Koji
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Power engineering/Power conversion/Electric machinery
- Research Institution
  University of Yamanashi
Research on the maximum performance of silicon carbide static induction devicesPrincipal Investigator
- Principal Investigator
  
  YANO Koji
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電力工学・電気機器工学
- Research Institution
  University of Yamanashi
静電誘導型半導体デバイスの高速パルスパワー応用Principal Investigator
- Principal Investigator
  
  矢野浩司
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  電力工学・電気機器工学
- Research Institution
  University of Yamanashi
Remote sensing of Induced Current in Magnetic Czochralski Crystal Growth
- Principal Investigator
  
  KASUGA Masanobu
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Yamanashi University

All 2023 2022 2019 2018 2017 2014 2013 2012 2011 2009 2008 2007 Other

All Journal Article Presentation

[Journal Article] Extremely Low ON-Resistance SiC Cascode Configuration Using Buried-Gate Static Induction Transistor2018
- Author(s)
  Koi Yano, Yasunori Tanaka, and Masayuki Yamamoto
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 39 Issue: 12 Pages: 1892-1895
- DOI
  10.1109/led.2018.2878933
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03214
[Journal Article] 3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)2014
- Author(s)
  A. Takatsuka,Y.Tanaka,K.Yano,N.Matsumoto,T.Yatsuo,and K.Arai
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 899-902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560327
[Journal Article] 1270V, 1.21mΩcm2 SiC buried gate static induction transistors (SiC-BGSITs)2009
- Author(s)
  Y. Tanaka, K. Yano, M. Okamoto, A. Tanaka, K. Arai, T. Yatsuo
- Journal Title
  
  Materials Science Forum 600-603
  
  Pages: 1071-1074
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Journal Article] Three dimensional analysis of turnoff operation of SiC buried gate static induction transistors (BG-SITs)2009
- Author(s)
  K.Yano, Y.Tanaka, T.Yatsuo,A.Takatsuka, M.Okamoto, and K. Arai
- Journal Title
  
  Materials Science Forum
  
  Pages: 1075-1078
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Journal Article] Three dimensional analysis of furnoff operation of SiC buried gate static induction transistors (BG-SITs)2009
- Author(s)
  K. Yano, Y. Tanaka, T. Yatsuo, A. Takatsuka, M. Okamoto, K. Arai
- Journal Title
  
  Materials Science Forum 600-603
  
  Pages: 1075-1078
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Journal Article] 1270V, 1.21mΩ cm^2 SiC buried gate static induction transistors (SiC-BGSITs)2009
- Author(s)
  Y.Tanaka, K.Yano, M.Okamoto, A.Tanaka, K.Arai, and T.Yatsuo
- Journal Title
  
  Materials Science Forum
  
  Pages: 1071-1074
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Journal Article] 1270V, 1.21mΩcm2 SiC Buried gate static induction transistors(SiC-BGSITs)2007
- Author(s)
  Y. Tanaka, K. Yano, M. Okamoto, A. Takatsuka, K. Arai, T. Yatsuo
- Journal Title
  
  Tech. Dig., Int. Conf. Silicon Carbide and Related Materials 2007
  
  Pages: 227-228
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Journal Article] Three dimensional analysis of turnoff operation of SiC buried gate static induction transistors(BG-SITs)2007
- Author(s)
  K. Yano, Y. Tanaka, T. Yatsuo, A. Takatsuka, M. Okamoto, K. Fukuda, K. Arai
- Journal Title
  
  Tech. Dig., Int. Conf. Silicon Carbide and Related Materials 2007
  
  Pages: 170-171
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Presentation] Siフルスーパージャンクションバイポーラダーリントンパワースイッチ2023
- Author(s)
  三井大樹、矢野浩司
- Organizer
  電気学会産業応用部門大会
- Data Source
  KAKENHI-PROJECT-23K03814
[Presentation] Si-SJBJT / SiC-MOSFET ダーリントンスイッチ2023
- Author(s)
  涌井　翔真、矢野　浩司
- Organizer
  電気学会　EDD/SPC 合同研究会　パワーデバイス・電力変換器とその制御
- Data Source
  KAKENHI-PROJECT-23K03814
[Presentation] p-NiO/n-Ga2O3ヘテロダイオードのFLR構造の耐圧シミュレーション2023
- Author(s)
  池上啓太, 唐澤直輝, 矢野浩司, 中込真二
- Organizer
  令和5年電気学会全国大会、講演論文集 221-B1 4-009
- Data Source
  KAKENHI-PROJECT-22K04190
[Presentation] 光駆動SiCカスコードスイッチによるハーフブリッジインバータ2022
- Author(s)
  鈴木　惇哉、松本　俊、矢野　浩司
- Organizer
  電気学会産業応用部門
- Data Source
  KAKENHI-PROJECT-20K04415
[Presentation] 光駆動SiCパワースイッチを用いたハーフブリッジインバータ回路の検証2022
- Author(s)
  鈴木　惇哉、松本　俊、矢野　浩司
- Organizer
  電気学会静岡東部支所、山梨支所研究発表会
- Data Source
  KAKENHI-PROJECT-20K04415
[Presentation] Stress test of cascode switch using SiC static induction transistor2019
- Author(s)
  T. Matsumoto, Y. Tanaka, K. Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03214
[Presentation] NiO/β-Ga2O3ヘテロ接合ダイオードのスイッチング応答の温度依存性2018
- Author(s)
  中込真二，菊地賢太郎，矢野浩司, 國分義弘
- Organizer
  第79回応用物理学会秋季学術講演会, 21p-331-1
- Data Source
  KAKENHI-PROJECT-17K05042
[Presentation] A novel gate drive circuit for high speed turn-on switching of ultra-low feedback capacitance SiC-VJFET2017
- Author(s)
  N. Kikuchi, T. Ishikawa, Y. Tanaka, K. Yano
- Organizer
  Proceedings of International conference on Eeectrical machines and systems (ICEMS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13927
[Presentation] SiC埋め込みゲート型SITにおけるオン抵抗の温度特性2014
- Author(s)
  望月雄貴、田中保宣、八尾勉、高塚章夫、山本真幸、矢野浩司
- Organizer
  先進パワー半導体分科会第１回講演会
- Place of Presentation
  ウインクあいち、名古屋市
- Year and Date
  2014-11-19
- Data Source
  KAKENHI-PROJECT-24560327
[Presentation] 3kVノーマリーオフ型SiC-BGSITの設計2014
- Author(s)
  飯塚大臣、田中保宣、八尾勉、高塚章夫、山本真幸、矢野浩司
- Organizer
  先進パワー半導体分科会第１回講演会
- Place of Presentation
  ウインクあいち、名古屋市
- Year and Date
  2014-11-19
- Data Source
  KAKENHI-PROJECT-24560327
[Presentation] ゲートオーバードライブによるノーマリーオフ型SiC-BGSITのターンオン性能の改善2013
- Author(s)
  勝俣公貴、田中保宣、八尾勉、高塚章夫、山本真幸、矢野浩司
- Organizer
  SiC及び関連半導体研究台22回講演会
- Place of Presentation
  埼玉会館
- Data Source
  KAKENHI-PROJECT-24560327
[Presentation] ゲートオーバードライブによるノーマリーオフSiC埋め込みゲートSITのスイッチング特性改善2012
- Author(s)
  中嶋　竜基、矢野　浩司、田中　保宣、八尾　勉、高塚　章夫
- Organizer
  SIC及び関連ワイドギャップ半導体研究会第２１回講演会
- Place of Presentation
  大阪市中央公会堂（大阪府）
- Data Source
  KAKENHI-PROJECT-24560327
[Presentation] SiC-静電誘導トランジスタの高温逆バイアス試験2011
- Author(s)
  矢野浩司・田中保宣・八尾勉・高塚章夫
- Organizer
  平成23年電気学会全国大会
- Year and Date
  2011-03-01
- Data Source
  KAKENHI-PROJECT-21560294
[Presentation] SiC-静電誘導トランジスタの高温逆バイアス試験2011
- Author(s)
  矢野浩司・田中保宣・八尾勉・高塚章夫
- Organizer
  平成23年電気学会全国大会(本大会は東日本震災のため中止になりましたが、予稿集は震災前に公表されています)
- Place of Presentation
  大阪大学
- Year and Date
  2011-03-01
- Data Source
  KAKENHI-PROJECT-21560294
[Presentation] Application of SiC-BGSITs for DC-DC converters2008
- Author(s)
  Y. Tanaka, K. Yano, A. Takatsuka, K. Arai, T. Yatsuo
- Organizer
  European Silicon Carbide and Related Matterials
- Place of Presentation
  バルセロナ
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-18560274
[Presentation] AraiShort circuit operation of SiC buried gate static induction transistors (SiC BGSITs)2008
- Author(s)
  K.Yano, Y.Tanaka, T.Yatsuo,A.Takatsuka, and K.
- Organizer
  European Silicon Carbide and Related Matterials
- Year and Date
  2008-09-09
- Data Source
  KAKENHI-PROJECT-18560274
[Presentation] Short circuit operation of SiC buried gate static induction transistors (SiC BGSITs)2008
- Author(s)
  K. Yano, Y. Tanaka, T. Yatsuo, A. Takatsuka, K. Arai
- Organizer
  European Silicon Carbide and Related Matterials
- Place of Presentation
  バルセロナ
- Year and Date
  2008-09-09
- Data Source
  KAKENHI-PROJECT-18560274
[Presentation] Application of SiC-BGSITs for DC-DC converters, European Silicon Carbide and Related Matterials2008
- Author(s)
  Y.Tanaka, K.Yano, A.Takatsuka, K.Arai, and T.Yatsuo
- Organizer
  Barcelona
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-18560274
[Presentation] 3.3 kV SiC Buried Gate Static Induction Transistors (SiC-BGSITs) With Ultra Low Specific On-Resistance
- Author(s)
  Yasunori TANAKA , Akio TAKATSUKA, Koji YANO, Norio MATSUMOTO, Tsutomu YATSUO
- Organizer
  European Conference Silicon Carbide & Related Materials
- Place of Presentation
  Grenoble,France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-24560327

1. TANAKA Yasunori (20357453)

# of Collaborated Projects: 5 results

# of Collaborated Products: 19 results
2. YATSUO Tsutomu (10399503)

# of Collaborated Projects: 5 results

# of Collaborated Products: 18 results
3. YAMAMOTO Masayuki (00511320)

# of Collaborated Projects: 3 results

# of Collaborated Products: 4 results
4. 松本俊 (00020503)

# of Collaborated Projects: 3 results

# of Collaborated Products: 3 results
5. NAKAGOMI Shinji (60172285)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
6. 安田隆 (90182336)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. KASUGA Masanobu (30023170)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

YANO Koji 矢野 浩司

矢野 浩司 ヤノ コウジ

Research Projects

Research Products

Co-Researchers

シリコン超低損失スーパージャンクションダーリントン型パワーデバイスの研究開発Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

全て酸化物からなる新規ワイドバンドギャップヘテロｐｎ接合ダイオードの特性改善

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Optically-driven SiC power switchesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of the Basic technology to fabricate new wide-bandgap hetero pn junction based on all oxide

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

3D stacked assembly of SiC cascode power devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Pulse power application of SiC power devices with ultra-low loss and high switching speedPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

A new opwerating mode of SiC-buried gate static induction transistor with untra-low on-resistancePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Improvement in th e reli ability of super low power loss SiC static induction devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Research on the maximum performance of silicon carbide static induction devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

静電誘導型半導体デバイスの高速パルスパワー応用Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Remote sensing of Induced Current in Magnetic Czochralski Crystal Growth

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Extremely Low ON-Resistance SiC Cascode Configuration Using Buried-Gate Static Induction Transistor2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] 3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)2014

Author(s)

Journal Title

Data Source

YANO Koji 矢野浩司

矢野浩司ヤノコウジ

[Presentation] Siフルスーパージャンクションバイポーラダーリントンパワースイッチ2023

[Presentation] 光駆動SiCパワースイッチを用いたハーフブリッジインバータ回路の検証2022