Yoshida Haruhiko 吉田晴彦

… Alternative Names

吉田晴彦ヨシダハルヒコ

YOSHIDA Haruhiko 吉田晴彦

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Researcher Number	90264837
Other IDs
Affiliation (Current)	2025: 兵庫県立大学, 工学研究科, 准教授
Affiliation (based on the past Project Information) *help	2018 – 2020: 兵庫県立大学, 工学研究科, 准教授 2006: University of Hyogo, Graduate School of Engineering, Associate Professor, 大学院工学研究科, 准教授 2006: 兵庫県立大学, 大学院工学研究科, 助教授 2005: 兵庫県立大学, 大学院・工学研究科, 助教授 2002: Himeji Institute of Technology, Graduate School of Engineering , Associate Professor, 大学院・工学研究科, 助教授 … More 2001: 姫路工業大学, 工学部, 講師 1999: Himeji Institute of Technology, Faculty of Engineering, Assistant Professor, 工学部, 講師 1998 – 1999: 姫路工業大学, 工学部, 助手 1995 – 1996: 姫路工業大学, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related / Applied materials science/Crystal engineering / Applied materials science/Crystal engineering Except Principal Investigator Applied materials science/Crystal engineering
Keywords	Principal Investigator 走査型容量顕微鏡 / 過渡容量分光法 / 非接触評価 / 界面特性 / パッシベーション / キャリアライフタイム / 表面反射率 / シリコンナノワイヤ / シリコン系太陽電池 / interface trap … More / capacitance-voltage method / scanning capacitance microscopy / contactless characterization / high-k gate insulator / フェルミピニング / 界面トラップ / C-V法 / High-k絶縁膜 / SOI Wafer / Water Mapping / Capacitance-frequency Method / Capacitance Transient / Capacitance-Voltage Method / Lifetime / Localized States / ContactLess Characterization / SOI / 局在凖位 / 容量-周波数特性 / 容量-電圧特性 / SOIウェーハ / ウェーハマッピング / 容量-周波数法 / 容量-電圧法 / ライフタイム / 局在準位 … More Except Principal Investigator SPV / ICTS / localized state / 局在準位 / contactless measurement / MOS diode / carrier lifetime / interface trap / SPV法 / ICTS法 / 再結合ライフタイム / 生成ライフタイム / 非接触測定 / MOSダイオード / キャリアライフタイム / 界面トラップ / variable hopping conduction / proximity effect / oxide high temperature superconductor / ホッピング伝導 / 近接効果 / 酸化物高温超伝導体 Less

Development of high conversion efficiency silicon solar cells with silicon nanowire surfacePrincipal Investigator
- Principal Investigator
  
  Yoshida Haruhiko
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related
- Research Institution
  University of Hyogo
Investigation of high-k gate insulator and its interface property by contactless capacitance transient spectroscopyPrincipal Investigator
- Principal Investigator
  
  YOSHIDA Haruhiko
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  University of Hyogo
Development of Scanning Capacitance Transient Spectroscopy and Characterization of Ultrathin Oxide/Silicon InterfacePrincipal Investigator
- Principal Investigator
  
  YOSHIDA Haruhiko
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Himeji Institute of Technology
Correlation between carrier lifetime and interface trap density in MOS devices
- Principal Investigator
  
  KISHINO Seigo
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C).
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Himeji Institute of Technology
Study on the formation mechanism of long-distance proximity effect
- Principal Investigator
  
  KISHINO Seigo
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Himeji Institute of Techology

All 2019 2007 2006

All Journal Article Presentation

[Journal Article] Local Characterization of Interface Properties of High-k Gate Stacks by Scanning Capacitance Microscopy.2007
- Author(s)
  S.Kuge, H.Yoshida, M.Inoue, S.Satoh
- Journal Title
  
  Proc. of The 2007 International Meeting for Future of Electron Devices, Kansai, IEEE
  
  Pages: 111-112
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560012
[Journal Article] Local Characterization of Interface Properties of High-k Gate Stacks by Scanning Capacitance Microscopy2007
- Author(s)
  S.Kuge, H.Yoshida, M.Inoue, S.Satoh
- Journal Title
  
  Proc. of The 2007 International Meeting for Future of Electron Devices, Kansai, IEEE
  
  Pages: 111-112
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560012
[Journal Article] Local Characterization of Interface Properties of High-k Gate Stacks by Scanning Capacitance Microscopy2007
- Author(s)
  S.Kuge, H.Yoshida, M.Inoue, S.Satoh
- Journal Title
  
  Proc. of The 2007 International Meeting for Future of Electron Devices, Kansai, IEEE (in press)
- Data Source
  KAKENHI-PROJECT-17560012
[Journal Article] Electrical Characterization of High-k Dielectrics/Si Interface by Contactless C-V Method2006
- Author(s)
  K.Fukano, H.Yoshida, M.Inoue, S.Satoh
- Journal Title
  
  Proc. of The 2006 International Meeting for Future of Electron Devices, Kansai, IEEE
  
  Pages: 63-64
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560012
[Journal Article] Electrical Characterization of High-k Dielectrics/Si Interface by Contactless C-V Method.2006
- Author(s)
  K.Fukano, H.Yoshida, M.Inoue, S.Satoh
- Journal Title
  
  Proc. of The 2006 International Meeting for Future of Electron Devices, Kansai, IEEE
  
  Pages: 63-64
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560012
[Presentation] ミストCVD法により成膜したGaOx膜のアニール効果（Ⅱ）2019
- Author(s)
  松田紘明、森英喜、新船幸二、吉田晴彦
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K03498
[Presentation] Optical and Electrical Properties of Si Nanowire for Si Solar Cells2019
- Author(s)
  Masaya Kuriyama, Hidenobu Mori, and Haruhiko Yoshida
- Organizer
  The 2019 IMFEDK, IEEE
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K03498
[Presentation] ミストCVD法により成膜したGaOx膜のアニール効果2019
- Author(s)
  松田紘明、森英喜、新船幸二、佐藤真一、吉田晴彦
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K03498

1. KISHINO Seigo (50201455)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
2. MATSUDA Tetsuro (10047582)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. SATOH Shinichi (80382258)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
4. 内橋貴之 (30326300)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 森英喜 (50364039)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
6. SOHRODER D.K

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Yoshida Haruhiko 吉田 晴彦

吉田 晴彦 ヨシダ ハルヒコ

YOSHIDA Haruhiko 吉田 晴彦

Research Projects

Research Products

Co-Researchers

Development of high conversion efficiency silicon solar cells with silicon nanowire surfacePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Investigation of high-k gate insulator and its interface property by contactless capacitance transient spectroscopyPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of Scanning Capacitance Transient Spectroscopy and Characterization of Ultrathin Oxide/Silicon InterfacePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Correlation between carrier lifetime and interface trap density in MOS devices

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study on the formation mechanism of long-distance proximity effect

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Local Characterization of Interface Properties of High-k Gate Stacks by Scanning Capacitance Microscopy.2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Local Characterization of Interface Properties of High-k Gate Stacks by Scanning Capacitance Microscopy2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Local Characterization of Interface Properties of High-k Gate Stacks by Scanning Capacitance Microscopy2007

Author(s)

Journal Title

Data Source

[Journal Article] Electrical Characterization of High-k Dielectrics/Si Interface by Contactless C-V Method2006

Author(s)

Journal Title

Description

Data Source

[Journal Article] Electrical Characterization of High-k Dielectrics/Si Interface by Contactless C-V Method.2006

Author(s)

Journal Title

Description

Data Source

[Presentation] ミストCVD法により成膜したGaOx膜のアニール効果（Ⅱ）2019

Author(s)

Organizer

Data Source

[Presentation] Optical and Electrical Properties of Si Nanowire for Si Solar Cells2019

Author(s)

Organizer

Data Source

[Presentation] ミストCVD法により成膜したGaOx膜のアニール効果2019

Author(s)

Organizer

Data Source

Yoshida Haruhiko 吉田晴彦

吉田晴彦ヨシダハルヒコ

YOSHIDA Haruhiko 吉田晴彦