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Sano Nobuyuki  佐野 伸行

… Alternative Names

SANO Nobuyuki  佐野 伸行

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Researcher Number 90282334
Other IDs
  • ORCIDhttps://orcid.org/0000-0002-6143-2080
External Links
Affiliation (Current) 2025: 筑波大学, 数理物質系(名誉教授), 名誉教授
Affiliation (based on the past Project Information) *help 2022 – 2025: 筑波大学, 数理物質系, 教授
2011 – 2017: 筑波大学, 数理物質系, 教授
2007 – 2010: University of Tsukuba, 大学院・数理物質科学研究科, 教授
2008: University of Tsukuba, 大学院数理物質科学研究科, 教授
2006: 筑波大学, 大学院数理物質科学研究科, 助教授 … More
2003: Univ.of Tsukuba, Institute of Applied Physics, Associate Professor, 物質工学系, 助教授
2000 – 2003: Univ. of Tsukuba, Institute of Applied Physics, Associate Professor, 物理工学系, 助教授
1997 – 1999: 筑波大学, 物理工学系, 講師 Less
Review Section/Research Field
Principal Investigator
Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related / 電子デバイス・機器工学 / Science and Engineering
Except Principal Investigator
Electronic materials/Electric materials / Science and Engineering
Keywords
Principal Investigator
モンテカルロ法 / MOSFET / クーロン相互作用 / 半導体デバイス / 電子輸送 / デバイスシミュレーション / 半導体物性 / 特性ばらつき / ボルツマン輸送方程式 / デバイス・シミュレーション … More / 集積回路 / 電子デバイス / 離散不純物 / semiconductor device / Monte Carlo method / シミュレーション / 電子デバイス・機器 / 計算物理 / ボルツマン方程式 / ポアソン方程式 / ハートリー近似 / 不純物散乱 / ポテンシャル揺らぎ / 非平衡統計物理 / 非平衡統 計物理 / ボツルマン輸送方程式 / 非平衡グリーン関数 / デバイスモデリング / 低次元系 / ナノ構造 / マイクロ・ナノデバイス / FET / 高電界効果 / 単原子層 / 先端機能デバイス / device simulation / device fluctuation / Drift-Diffusion simulation / impurity fluctuation / ドリフト拡散法 / 不純物ゆらぎ / current noise / hot carrier / device lifetime / simulation / impact ionization / 弾道輸送 / 電流ノイズ / ホットキャリア / 素子寿命 / 衝突イオン化 / トランジスター / ジャンクションレスFET / スケーリング / トランジスタ / 量子輸送 / 非平衡グリーン関数法 / 半導体特性 … More
Except Principal Investigator
Mesoscopic device / Ultra-small device / Single electron transistor / Resonant tunneling / Quantum dot / メゾスコピック・デバイス / 極微細素子 / 単一電子トランジスタ / 共鳴トンネル効果 / 量子ドット / 集積エレクトロニクス / ナノメータ・スケール / トランスポート / 第一原理計算 / ナノテクノロジー / シリコン集積回路 / 理論的アセスメント / 微細化限界 / ナノメータ・スケール素子 Less
  • Research Projects

    (11 results)
  • Research Products

    (152 results)
  • Co-Researchers

    (11 People)
  •  不純物離散性を初めて導入した非平衡グリーン関数法による現実的ナノデバイス特性予測Principal Investigator

    • Principal Investigator
      佐野 伸行
    • Project Period (FY)
      2025 – 2027
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      University of Tsukuba
  •  Nanoscale device simulation that properly includes local potential fluctuationsPrincipal Investigator

    • Principal Investigator
      佐野 伸行
    • Project Period (FY)
      2022 – 2024
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      University of Tsukuba
  •  Coulomb Interaction in Atomic-Layer FET Devices and Realistic Prediction of Device CharacteristicsPrincipal Investigator

    • Principal Investigator
      SANO Nobuyuki
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Tsukuba
  •  Effects of the Coulomb Interaction and Realistic Device Analyses in 3D Nanoscale Semiconductor DevicesPrincipal Investigator

    • Principal Investigator
      SANO Nobuyuki
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Tsukuba
  •  Simulation Study of Long-Range Coulomb Interaction in Nano-Scale DevicesPrincipal Investigator

    • Principal Investigator
      SANO Nobuyuki
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Tsukuba
  •  Microscopic Fluctuations and Transport Mechanism of Few Electron SystemsPrincipal Investigator

    • Principal Investigator
      SANO Nobuyuki
    • Project Period (FY)
      2006 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      University of Tsukuba
  •  Study of High-Density Electron Transport by Three-Dimensional Particle-Based Simulations under Nano-Scale DevicesPrincipal Investigator

    • Principal Investigator
      SANO Nobuyuki
    • Project Period (FY)
      2006 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Tsukuba
  •  Device Modeling of Discrete Impurities for the Analyses of Threshold Voltage Fluctuations in Ultrasmall Semiconductor DevicesPrincipal Investigator

    • Principal Investigator
      SANO Nobuyuki
    • Project Period (FY)
      2002 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      University of Tsukuba
  •  ナノメータ・スケール集積エレクトロニクスの理論的構築

    • Principal Investigator
      NATORI Kenji
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      University of Tsukuba
  •  Study on Device Lifetime Uncertainty asscociated with Substrate Current Fluctuation in Ultrasmall Semiconductor DevicesPrincipal Investigator

    • Principal Investigator
      SANO Nobuyuki
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (B).
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      University of Tsukuba
  •  The Resonant Tunneling Electron Transport through a Quantum Dot and Its Application

    • Principal Investigator
      NATORI Kenji
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      University of Tsukuba

All 2024 2023 2022 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 Other

All Journal Article Presentation

  • [Journal Article] Shallow p-n Junctions under Discrete Impurities in Semiconductor Devices2024

    • Author(s)
      Nobuyuki Sano
    • Journal Title

      IEEE Trans. Electron Dev.

      Volume: ED-71 Issue: 2 Pages: 965-970

    • DOI

      10.1109/ted.2023.3341839

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23K22809
  • [Journal Article] Variability and self-average of impurity-limited resistance in quasi-one dimensional nanowires2017

    • Author(s)
      Sano Nobuyuki
    • Journal Title

      Solid State Electronics

      Volume: 128 Pages: 25-30

    • DOI

      10.1016/j.sse.2016.10.016

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Journal Article] Determination of band profiles in GaN films using hard X-ray photoelectron spectroscopy2017

    • Author(s)
      Shinji Saito, Masahiko Yoshiki, Shinya Nunoue and Nobuyuki Sano
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 56 Issue: 2 Pages: 021003-021003

    • DOI

      10.7567/jjap.56.021003

    • NAID

      210000147416

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Journal Article] Self-consistent device simulation of a-Si pin solar cells and energy resolution analyses of capture and emission processes2016

    • Author(s)
      Suzuki Azuma、Yoshida Katsuhisa、Sano Nobuyuki
    • Journal Title

      J. Comp. Electron.

      Volume: 15 Issue: 4 Pages: 1554-1562

    • DOI

      10.1007/s10825-016-0915-1

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Journal Article] Phase interference due to multiple impurities and space-average resistance in quasi-one-dimensional nanowires2016

    • Author(s)
      Nobuyuki Sano and Akiko Ueda
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 2 Pages: 025001-025001

    • DOI

      10.7567/apex.9.025001

    • NAID

      120007129616

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Journal Article] Impurity-limited resistance and phase interference of localized impurities under quasi-one dimensional nano-structures2015

    • Author(s)
      Nobuyuki Sano
    • Journal Title

      J. Appl. Phys.

      Volume: 118 Issue: 24

    • DOI

      10.1063/1.4938392

    • NAID

      120007129773

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Journal Article] Conduction and Spin Transport via Edge States in Randomly Hydrogenated Graphene Nano-Ribbon2015

    • Author(s)
      K. Inuzuka, S. Honda, and N. Sano
    • Journal Title

      JPS Conference Proceedings

      Volume: 5

    • DOI

      10.7566/jpscp.5.011016

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-25820135, KAKENHI-PROJECT-15H03983
  • [Journal Article] Correlation effects of localized impurities on electron transport under 1-D nanostructures2015

    • Author(s)
      N. Sano, M. R. Zulhidza, Y. Kaneno, S. Honda, A. Ueda, and K. Yoshida
    • Journal Title

      Journal of Physics: Conference Series

      Volume: 647 Pages: 012028-012028

    • DOI

      10.1088/1742-6596/647/1/012028

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Journal Article] Enhanced impurity-limited mobility in ultra-scaled Si nanowire junctionless field-effect transistors2015

    • Author(s)
      Akiko Ueda, Mathieu Luisier, and Nobuyuki Sano
    • Journal Title

      Appl. Phys. Lett.

      Volume: 107 Issue: 25

    • DOI

      10.1063/1.4937901

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Journal Article] Magnetization and Conductance of Asymmetrically Hydrogenated Graphene Nanoribbons2014

    • Author(s)
      Syuta Honda, Kouhei Inuzuka, Norio Ota, Nobuyuki Sano, Takeshi Inoshita
    • Journal Title

      J. Phys. D: Appl. Phys.

      Volume: 47 Issue: 48 Pages: 485004-485004

    • DOI

      10.1088/0022-3727/47/48/485004

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-24360130, KAKENHI-PROJECT-25820135
  • [Journal Article] Self-Consistent Monte Carlo Simulation of Junctionless Transistor including Dynamical Coulomb Interaction2014

    • Author(s)
      Katsuhisa Yoshida, Toru Shibamiya, Nobuyuki Sano
    • Journal Title

      Appl. Phys. Lett.

      Volume: 105 Issue: 3

    • DOI

      10.1063/1.4890695

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-24360130
  • [Journal Article] ジャンクションレストランジスタにおけるNEGF法を用いたデバイスシミュレーション2013

    • Author(s)
      植田暁子, Mathieu Luisier, 吉田勝尚, 本多周太, 佐野伸行
    • Journal Title

      信学技報

      Volume: 113 Pages: 61-64

    • Data Source
      KAKENHI-PROJECT-24360130
  • [Journal Article] Surface Potential-Based Polycrystalline-Silicon Thin-Film Transistors Compact Model by Non-Equilibrium Approach2013

    • Author(s)
      Hiroyuki Ikeda, Nnobuyuki Sano
    • Journal Title

      IEEE Trans. Electron Dev

      Volume: 60 Issue: 10 Pages: 3417-3423

    • DOI

      10.1109/ted.2013.2278274

    • NAID

      120007136798

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360130
  • [Journal Article] One-Flux Theory of Saturated Drain Current in Nanoscale Transistors2012

    • Author(s)
      T-w.Tang, M.V.Fischetti, S.Jin, N.Sano
    • Journal Title

      Solid State Electron

      Volume: (In press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] One-Flux Theory of Saturated Drain Current in Nanoscale Transistors2012

    • Author(s)
      T-w. Tang, M. V. Fischetti, S. Jin and N. Sano
    • Journal Title

      Solid State Electron.

      Volume: 78 Pages: 115-120

    • DOI

      10.1109/isdrs.2011.6135197

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360130
  • [Journal Article] Multi-Scale Monte Carlo Simulation of Soft Errors Using PHITS-HyENEXSS Code System2012

    • Author(s)
      S. Abe, Y. Watanabe, N. Shibano, N. Sano, H. Furuta, M. Tsutsui, T. Uemura, and T.Arakawa
    • Journal Title

      IEEE Transactions on Nuclear Science

      Volume: 59 Issue: 4 Pages: 965-970

    • DOI

      10.1109/tns.2012.2187215

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360130
  • [Journal Article] Device simulation of intermediate band solar cells: Effects of doping and concentration2012

    • Author(s)
      K. Yoshida, Y. Okada and N. Sano
    • Journal Title

      Journal of Applied Physics

      Volume: 112 Issue: 8 Pages: 814510-814510

    • DOI

      10.1063/1.4759134

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22241035, KAKENHI-PROJECT-24360130
  • [Journal Article] Monte Carlo Study of the Coulomb Interaction in Nano-Scale Silicon Devices2011

    • Author(s)
      Nobuyuki Sano
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 50

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] Impact of the Coulomb Interaction on Nano-Scale Silicon Device Characteristics2011

    • Author(s)
      Nobuyuki Sano
    • Journal Title

      J.Comp.Electron.

      Volume: 98 Pages: 98-103

    • NAID

      120007130717

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] Quasi-Ballistic Transport in Nano-Scale Devices : Boundary Layer, Potential Fluctuation, and Coulomb Interaction2011

    • Author(s)
      N.Sano, T.Karasawa
    • Journal Title

      Key Engineering Materials

      Volume: 470 Pages: 207-213

    • DOI

      10.4028/www.scientific.net/kem.470.207

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] Impact of the Coulomb Interaction on Nano-Scale Silicon Device Characteristics2011

    • Author(s)
      N. Sano
    • Journal Title

      J. Comp. Electron

      Volume: 10 Issue: 1-2 Pages: 98-103

    • DOI

      10.1007/s10825-010-0327-6

    • NAID

      120007130717

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] Self-Consistent Simulation of Intermediate Band Solar Cell : Effect of Occupation Rate on Device Characteristics2010

    • Author(s)
      K. Yoshida, Y. Okada and N. Sano
    • Journal Title

      Appl. Phys. Lett

      Volume: 97 Issue: 13

    • DOI

      10.1063/1.3488815

    • NAID

      120007137892

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] Pinch-off Voltage Lowering in Polycrystalline-Silicon Thin-Film Transistors2010

    • Author(s)
      H. Ikeda and N. Sano
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 50 Issue: 1R Pages: 014301-014301

    • DOI

      10.1143/jjap.50.014301

    • NAID

      40017446836

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] Monte Carlo Study of the Coulomb Interaction in Nano-Scale Silicon Devices2010

    • Author(s)
      N. Sano
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 50 Issue: 1R Pages: 010108-010108

    • DOI

      10.1143/jjap.50.010108

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] Self-Consistent Simulation of Intermediate Band Solar Ce-Effect of Occupation Rate on Device Characteristics2010

    • Author(s)
      Katsuhisa Yoshida, Yoshitaka Okada, Nobuyuki Sano
    • Journal Title

      Appl.Phys.Lett.

      Volume: 97

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors2009

    • Author(s)
      H. Ikeda and N. Sano
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 48 Issue: 10 Pages: 101201-101201

    • DOI

      10.1143/jjap.48.101201

    • NAID

      40016796029

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors2009

    • Author(s)
      H.Ikeda, N.Sano
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • NAID

      40016796029

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] 最先端デバイスのモンテカルロ法2009

    • Author(s)
      佐野伸行
    • Journal Title

      電気学会誌

      Volume: 12月号 Pages: 796-799

    • NAID

      10026224039

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] Scaling FETs to 10nm : Coulomb Effects, Source Starvation, and Virtual Source2009

    • Author(s)
      M.V.Fischetti, S.Jin, T.-w.Tang, P.Asbeck, Y.Taur, S.E.Laux, N.Sano
    • Journal Title

      J.Comp.Electron. 2

      Pages: 60-77

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors2009

    • Author(s)
      H. Ikeda, N. Sano
    • Journal Title

      Jpn. J. Appl. Phys. 48

    • NAID

      40016796029

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors2009

    • Author(s)
      F.Ootsuka, A.Katakami, K.Shirai, H.i Nakata, T.Eimori, Y.Nara, Y.Ohji, K.Shimura, S.Horii, N.Sano, K.Yamabe
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • NAID

      40016796029

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] Scaling FETs to 10 nm : Coulomb Effects, Source Starvation, and Virtual Source2009

    • Author(s)
      M. V. Fischetti, S. Jin, T.-w. Tang, P. Asbeck, Y. Taur, S. E. Laux, and N. Sano
    • Journal Title

      J. Comp. Electron

      Volume: 2 Issue: 2 Pages: 60-77

    • DOI

      10.1007/s10825-009-0277-z

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] 最先端デバイスのモンテカルロ法2009

    • Author(s)
      佐野伸行
    • Journal Title

      電気学会誌 12

      Pages: 796-799

    • NAID

      10026224039

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-k pFETs using Ion-Beam W2009

    • Author(s)
      F. Ootsuka, A. Katakami, K. Shirai, H. Nakata, T. Eimori, Y. Nara, Y. Ohji, K.Shimura, S. Horii, N. Sano, K. Yamabe
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 48 Issue: 5R Pages: 056502-056502

    • DOI

      10.1143/jjap.48.056502

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source2009

    • Author(s)
      M.V. Fischetti, S. Jin, T. -w. Tang, P. Asbeck, Y. Taur, S.E. Laux, N. Sano
    • Journal Title

      J. Comp. Electron. 2

      Pages: 60-77

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Scaling FETs to 10nm : Coulomb Effects, Source Starvation, and Virtua 1 Source2009

    • Author(s)
      M.V.Fischetti, S.Jin, T.-w.Tang, P.Asbeck, Y.Taur, S.E.Laux, N.Sano
    • Journal Title

      J.Comp.Electron. 2

      Pages: 60-77

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Journal Article] Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors2009

    • Author(s)
      H.Ikeda, N.Sano
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • NAID

      40016796029

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors2009

    • Author(s)
      F.Ootsuka, A.Katakami, K.Shirai, H.i Nakata, T.Eimori, Y.Nara, Y.Ohji, K.Shimura, S.Horii, N.Sano, K.Yamabe
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • NAID

      40016796029

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Consistency of Boundary Conditions in Nonequilibrium Green's Function Simulations2008

    • Author(s)
      Suguru Sato and Nobuyuki Sano
    • Journal Title

      Journal of Computational Electronics 7

      Pages: 240-243

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Consistency of Boundary Conditions in Non- equilibrium Green's Function Simulations2008

    • Author(s)
      S.Sato and N.Sano
    • Journal Title

      J. Comp. Electron 7

      Pages: 301-304

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Three-dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction2008

    • Author(s)
      Takayuki Fukui, Tadayoshi Uechi, and Nobuyuki Sano
    • Journal Title

      Applied Physics Express 1

    • NAID

      10025080337

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Schottky Barrier MOSFETs as Resonant Tunneling Devices2008

    • Author(s)
      Shuichi, Toriyama・Nobuyuki, Sano
    • Journal Title

      J.Comp.Phys. 7(In press)

    • NAID

      10022548097

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Schottky Barrier MOSFETs as Resonant Tunneling Devices2008

    • Author(s)
      Shuichi Toriyama and Nobuyuki Sano
    • Journal Title

      Journal of Computational Electronics 7

      Pages: 471-474

    • NAID

      10022548097

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Journal Article] 3D Monte Carlo Analysis of potential Fluctuations under High Electron Concentrations2008

    • Author(s)
      T. Uechi, T. Fukui, N. Sano
    • Journal Title

      J. Comp. Electron. 7

      Pages: 240-243

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Three-dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction2008

    • Author(s)
      T.Fukui, T.Uechi, and N.Sano
    • Journal Title

      Appl. Phys. Exp 1

    • NAID

      10025080337

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Journal Article] 3D Monte Carlo Analysis of potential Fluctuations under High Electron Concentrations2008

    • Author(s)
      Tadayoshi Uechi, Takayuki Fukui, and Nobuyuki Sano
    • Journal Title

      J. Comp. Phys. 7(in press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Journal Article] 3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes2008

    • Author(s)
      Tadayoshi Uechi, Takayuki Fukui, and Nobuyuki Sano
    • Journal Title

      Phys. stat. sol.(c) 5

      Pages: 102-106

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] 3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes2008

    • Author(s)
      T.Uechi, T.Fukui, and N.Sano
    • Journal Title

      Phys.stat.sol.(c) 5

      Pages: 102-106

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Journal Article] Schottky Barrier MOSFETs as Resonant Tunneling Devices2008

    • Author(s)
      Shuichi Toriyama and Nobuyuki Sano
    • Journal Title

      J. Comp. Phys. 7(in press)

    • NAID

      10022548097

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Journal Article] Three -dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction2008

    • Author(s)
      T.Fukui, T.Uechi, and N.Sano
    • Journal Title

      Appl. Phys. Exp 1

    • NAID

      10025080337

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] 3D Monte Carlo Analysis of potential Fluctuations under High Electron Concentrations2008

    • Author(s)
      T.Uechi, T.Fukui, and N.Sano
    • Journal Title

      J. Comp. Electron 7

      Pages: 240-243

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Journal Article] Consistency of Boundary Conditions in Nonequilibrium Green's Function Simulations2008

    • Author(s)
      Suguru, Sato・Nobuyuki, Sano
    • Journal Title

      J.Comp.Phys. 7(In press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Schottky Barrier MOSFETs as Resonant Tunneling Devices2008

    • Author(s)
      S.Toriyama and N.Sano
    • Journal Title

      J. Comp. Electron 7

      Pages: 471-474

    • NAID

      10022548097

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Journal Article] Consistency of Boundary Conditions in Nonequilibrium Green's Function Simulations2008

    • Author(s)
      Suguru Sato and Nobuyuki Sano
    • Journal Title

      J. Comp. Phys. 7(in press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Journal Article] Consistency of Boundary Conditions in Nonequilibrium Green's Function Simulations2008

    • Author(s)
      S.Sato, and N.Sano
    • Journal Title

      J. Comp. Electron 7

      Pages: 301-304

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Journal Article] 3D Monte Carlo Analysis of potential Fluctuations under High Electron Concentrations2008

    • Author(s)
      Tadayoshi Uechi, Takayuki Fukui, and Nobuyuki Sano
    • Journal Title

      Journal of Computational Electronics 7

      Pages: 240-243

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Journal Article] Three-dimensional Monte Carlo Simulation of Electron Transport in SiIncluding Full Coulomb Interaction2008

    • Author(s)
      Takayuki Fukui, Tadayoshi Uechi, and Nobuyuki Sano
    • Journal Title

      Applied Physics Express 1

    • NAID

      10025080337

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Journal Article] 3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes2008

    • Author(s)
      Tadayoshi, Uechi・Takayuki, Fukui・Nobuyuki, Sano
    • Journal Title

      Phys.stat.sol.(c) 5

      Pages: 102-106

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] 3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes2008

    • Author(s)
      T. Uechi, T. Fukui, N. Sano
    • Journal Title

      Phys. stat. sol. (c) 5

      Pages: 102-106

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Schottky Barrier MOSFETs as Resonant Tunneling Devices2008

    • Author(s)
      S. Toriyama, N. Sano
    • Journal Title

      J. Comp. Electron 7

      Pages: 471-474

    • NAID

      10022548097

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Consistency of Boundary Conditions in Nonequilibrium Green's Function Simulations2008

    • Author(s)
      S. Sato, N. Sano
    • Journal Title

      J. Comp. Electron. 7

      Pages: 301-304

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] ナノスケール半導体構造における準弾道電子輸送2007

    • Author(s)
      佐野伸行
    • Journal Title

      応用物理学会誌 10月号

      Pages: 1135-1141

    • NAID

      10019956738

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Journal Article] ナノスケール半導体構造における準弾道電子輸送2007

    • Author(s)
      佐野伸行
    • Journal Title

      応用物理学会誌 10

      Pages: 1135-1141

    • NAID

      10019956738

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] ナノスケール半導体構造における準弾道電子輸送2007

    • Author(s)
      佐野伸行
    • Journal Title

      応用物理学会誌 10月号

      Pages: 1135-1141

    • NAID

      10019956738

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Kinetic Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices2006

    • Author(s)
      Nobuyuki Sano
    • Journal Title

      Electronic Communications in Japan 88

      Pages: 1-9

    • NAID

      10016599142

    • Data Source
      KAKENHI-PROJECT-18063004
  • [Journal Article] Kinetic Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices2006

    • Author(s)
      Nobuyuki Sano
    • Journal Title

      Electronic Communications in Japan 88

      Pages: 1-9

    • NAID

      10016599142

    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] Self-Consistent Monte Carlo Device Simulation of Capture-Excitation Processes of Carriers2023

    • Author(s)
      F. Hashimoto, T. Suzuki, H. Minari, N. Nakazaki, J. Komachi, N. Sano
    • Organizer
      2023 International Conference on Simulation Semiconductor Processes and Devices (SISPAD2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K22809
  • [Presentation] キャリアの捕獲・励起過程を導入した自己無撞着モンテカルロデバイスシミュレーション2023

    • Author(s)
      橋本風渡、鈴木刀真、三成英樹、中﨑暢也、小町潤、佐野伸行
    • Organizer
      電子情報通信学会 シリコン材料・デバイス(SDM)研究会集会
    • Invited
    • Data Source
      KAKENHI-PROJECT-23K22809
  • [Presentation] 半導体デバイスにおける物理モデリングとシミュレーションの現状とその意味2022

    • Author(s)
      佐野伸行
    • Organizer
      ソニー特別講演
    • Invited
    • Data Source
      KAKENHI-PROJECT-23K22809
  • [Presentation] 半導体デバイスモデリング講座2022

    • Author(s)
      佐野伸行
    • Organizer
      ソニーエンジニア向け集中講義
    • Invited
    • Data Source
      KAKENHI-PROJECT-23K22809
  • [Presentation] 不純物の離散性に伴った半導体デバイスモデリングの基本的側面 -ランダム不純物ばらつきと自己平均化-2017

    • Author(s)
      佐野伸行
    • Organizer
      電子情報通信学会 シリコン材料・デバイス(SDM)研究会集会
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Presentation] Fundamental Aspects of Discrete Impurity Model for Nano-Scale Device Simulations2017

    • Author(s)
      Nobuyuki Sano
    • Organizer
      Seminar on Noise and Reliability in Silicon Electronics (NCTU)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Presentation] Variability and Self-Average of Impurity-limited Resistance in Semiconductor Nanowires2017

    • Author(s)
      Nobuyuki Sano
    • Organizer
      7th Annual World Congress of Nano Science & Technology-2017 (Nano S&T-2017),
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Presentation] モンテカルロ・デバイスシミュレーションの基本的側面と応用2017

    • Author(s)
      佐野伸行
    • Organizer
      第3回CDMSI(ポスト「京」重点課題(7))シンポジウム
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Presentation] Physical Issues in Device Modeling: Length-Scale, Disorder, and Phase Interference2017

    • Author(s)
      Nobuyuki Sano
    • Organizer
      International Conference on Simulation Semiconductor Processes and Devices (SISPAD2017)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Presentation] 微細構造デバイスシミュレーションにおける局所的な乱れによるポテンシャルゆらぎの物理的側面2017

    • Author(s)
      佐野伸行
    • Organizer
      第65回応用物理学会春季学術講演会 シンポジウム「デバイスシミュレーション技術の活用と将来展望」
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Presentation] Self-Consistent Monte-Carlo Simulations for Modern Electron Devices2016

    • Author(s)
      Nobuyuki Sano
    • Organizer
      International Conference on Solid State Materials and Devices (SSDM-2016), Short Course
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Presentation] フルバンドモンテカルロ法によるアバランシェ破壊解析2016

    • Author(s)
      鎌倉良成, 藤田流星, 小長晃輔, 上岡良季, 小谷岳生, 森伸也, 鍾菁廣, 小田中紳二, 廣木彰, 佐野伸行
    • Organizer
      第2回CDMSI シンポジウム
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Presentation] Large Mobility Modulation Due to Discrete Impurities in Nanowires2016

    • Author(s)
      Nobuyuki Sano
    • Organizer
      230th Electrochemical Society Meeting (PRiME 2016/230th ECS Meeting)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Presentation] Space-Average Impurity-Limited Resistance and Self-Averaging in Quasi-1D Nanowires2016

    • Author(s)
      Nobuyuki Sano
    • Organizer
      2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2016)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Presentation] A New Departure in Graduate Honors Program at University of Tsukuba2015

    • Author(s)
      Nobuyuki Sano
    • Organizer
      Eleventh International Nanotechnology Conference on Communication and Cooperation (INC 11)
    • Place of Presentation
      Hilton Fukuoka Sea Hawk, Fukuoka Fukuoka
    • Year and Date
      2015-05-11
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Presentation] ナノワイヤ構造におけるイオン化不純物散乱:結合定数と位相干渉2015

    • Author(s)
      金野有治、植田暁子、佐野伸行
    • Organizer
      秋季第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場, 愛知県名古屋市
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Presentation] Correlation effects of localized impurities on electron transport under 1-D nanostructures2015

    • Author(s)
      N. Sano, M. R. Zulhidza, Y. Kaneno, S. Honda, A. Ueda, and K. Yoshida
    • Organizer
      19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON-19)
    • Place of Presentation
      Salamanca, Spain
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Presentation] 量子ドット中間バンド型太陽電池における連続トンネルの影響2015

    • Author(s)
      吉田勝尚、岡田至崇、佐野伸行
    • Organizer
      秋季第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場, 愛知県名古屋市
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Presentation] ジャンクションレスナノワイヤFETにおける移動度2015

    • Author(s)
      植田暁子、Mathieu Luisier、佐野伸行
    • Organizer
      秋季第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場, 愛知県名古屋市
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03983
  • [Presentation] ナノ構造での電子輸送と界面:理論的見地から2014

    • Author(s)
      佐野伸行
    • Organizer
      日本学術振興会 産学協力研究委員会 半導体界面制御技術第154委員会, 第91回研究会
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2014-05-08
    • Invited
    • Data Source
      KAKENHI-PROJECT-24360130
  • [Presentation] 3D structural dependence of carrier transport for intermediate band solar cells2013

    • Author(s)
      K. Yoshida, Y. Okada, and N. Sano
    • Organizer
      The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON-18)
    • Place of Presentation
      Kunibiki Messe, Matsue
    • Data Source
      KAKENHI-PROJECT-24360130
  • [Presentation] Effect of Sigma-band for Conduction of Metal/Graphene/Metal Junctions2013

    • Author(s)
      S. Honda, K. Inuduka, and N. Sano
    • Organizer
      2013 International Workshop on Computational Electronics (IWCE-16)
    • Place of Presentation
      Nara Prefectural New Public Hall, Nara
    • Data Source
      KAKENHI-PROJECT-24360130
  • [Presentation] Tunnel Conduction and Density of States in Shallow PN Junction of Si Nanowire2013

    • Author(s)
      R. Ooi, S. Honda, A. Ueda, and N. Sano
    • Organizer
      The 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON-18)
    • Place of Presentation
      Kunibiki Messe, Matsue
    • Data Source
      KAKENHI-PROJECT-24360130
  • [Presentation] ナノデバイスのシミュレーョン:なぜ、モンテカルロ法か?2013

    • Author(s)
      佐野 伸行
    • Organizer
      第60回応用物理学会春季学術講演会シンポジウム
    • Place of Presentation
      神奈川工科大学、厚木市
    • Invited
    • Data Source
      KAKENHI-PROJECT-24360130
  • [Presentation] A New Generation of Surface Potential-Based poly-Si TFTs Compact Model2012

    • Author(s)
      H. Ikeda and N. Sano
    • Organizer
      IEEE International Electron Devices Meeting (IEDM-2012)
    • Place of Presentation
      San Francisco Hilton, San Francisco, U.S.A.
    • Data Source
      KAKENHI-PROJECT-24360130
  • [Presentation] A New Departure in Graduate Program with TIA-nano at University of Tsukuba2012

    • Author(s)
      N. Sano, K. Murakami
    • Organizer
      IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
    • Place of Presentation
      Pacifico Yokohama, Yokohama
    • Invited
    • Data Source
      KAKENHI-PROJECT-24360130
  • [Presentation] The Role of High-Doped Source and Drain on Device Performance in Nano-Scale Si-MOSFETs2011

    • Author(s)
      Nobuyuki Sano
    • Organizer
      2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
    • Place of Presentation
      Kansai Univ.(Osaka)(INVITED)
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] The Role of High-Doped Source and Drain on Device Performance in Nano-Scale Si-MOSFETs2011

    • Author(s)
      (INVITED) N. Sano
    • Organizer
      2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
    • Place of Presentation
      Kansai Univ
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Self-Consistent Monte Carlo Study of the Coulomb Interaction under Nano-Scale Device Structures2011

    • Author(s)
      N. Sano
    • Organizer
      The American Physica Society March Meeting
    • Place of Presentation
      Dallas, U.S.A
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Quasi-Ballistic Transport in Nano-Scale Devices : Boundary Layer, Potential Fluctuation, and Coulomb Interaction2010

    • Author(s)
      Nobuyuki Sano
    • Organizer
      International Conference on Simulation of Semiconductor Processes and Devices(SISPAD-2010)
    • Place of Presentation
      Bologna, Italy(招待講演)
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Quasi-Ballistic Transport in Nano-Scale Devices : Boundary Layer, Potential Fluctuation, and Coulomb Interaction2010

    • Author(s)
      (INVITED) N. Sano
    • Organizer
      International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2010)
    • Place of Presentation
      Bologna, Italy
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Quasi-Ballistic Transport in Nano-Scale Devices : Boundary Layer, Potential Fluctuation, and Coulomb Interaction2010

    • Author(s)
      N. Sano and T. Karasawa
    • Organizer
      International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE)
    • Place of Presentation
      Tokyo Institute of Technology
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Scaling FETs to 10 nm : Coulomb Effects, Source Starvation, and Virtual Source2010

    • Author(s)
      (INVITED) M. V. Fischetti, S. Jin, T.-w. Tang, P. Asbeck, Y. Taur, S. E. Laux, N. Sano, and M. Rodwell
    • Organizer
      217th ECS Meeting
    • Place of Presentation
      Vancouver, Canada
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Model-Comparison Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices2010

    • Author(s)
      T-w. Tang, I. Yoon, N. Sano, S. Jin, M. Fischetti, and Y. J. Park
    • Organizer
      International Workshop on Computational Electronics (IWCE-14)
    • Place of Presentation
      Pisa, Italy
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Validation of nuclear reaction models relevant to cosmic-ray neutron induced single-event effects in microelectronics2010

    • Author(s)
      S. Abe, Y. Watanabe, S. Hirayama, N. Sano, Y. Tosaka, M. Tsutsui, H. Furuta and T. Imamura
    • Organizer
      International Nuclear Physics Conference (INPC 2010)
    • Place of Presentation
      Vancouver, Canada
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Self-Consistent Drift-Diffusion Approach for Analysis of Intermediate Band Solar Cells with Multi-Stacked Quantum Dots2010

    • Author(s)
      K. Yoshida, Y. Okada, and N. Sano
    • Organizer
      25th European Photovoltaic Solar Energy Conference and Exhibition (25thEUPVSEC)
    • Place of Presentation
      Valencia, Spain
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Discrete Impurity and Mobility in Drift- Diffusion Simulations for Device Characteristics Variability2009

    • Author(s)
      N. Shibano, N. Sano
    • Organizer
      2009 International Semiconductor Device Research Symposium (ISDRS 2009)
    • Place of Presentation
      College Park, USA
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Scaling FETs to 10 nm : Coulomb Effects, Source Starvation, and Virtual Source2009

    • Author(s)
      (INVITED) M. V. Fischetti, S. Jin, T.-w. Tang, P. Asbeck, Y. Taur, S. E. Laux, and N. Sano
    • Organizer
      International Workshop on Computational Electronics (IWCE-13)
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Self-Consistent Monte Carlo Device Simulations under Nano-Scale Device Structures : Role of Coulomb interaction, Degeneracy, and Boundary Condition2009

    • Author(s)
      Kohei Nakanishi, Tadayoshi Uechi, Nobuyuki Sano
    • Organizer
      IEEE International Electron Devices Meeting(IEDM-2009)
    • Place of Presentation
      Baltimore, MD, U.S.A
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Impact of the Coulomb Interaction on Nano-scale Device Characteristics: A Monte Carlo Study2009

    • Author(s)
      N.Sano
    • Organizer
      IEEE EDS Mini-colloquium for Nano CMOS and Nanowire
    • Place of Presentation
      東京工業大学、横浜市
    • Year and Date
      2009-02-21
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Physical Model and Mesh-Size Dependence in Drift-Diffusion Simulations for Single-Event Effects by Heavy Ions2009

    • Author(s)
      N. Shibano, N. Sano, Y. Tosaka, H. Furuta, M. Tsutsui, and K. Imamura
    • Organizer
      2009 International Semiconductor Device Research Symposium (ISDRS 2009)
    • Place of Presentation
      College Park, U.S.A
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Discrete Impurity and Mobility in Drift-Diffusion Simulations for Device Characteristics Variability2009

    • Author(s)
      T. Karasawa, K. Nakanishi, N. Sano
    • Organizer
      2009 International Semiconductor Device Research Symposium (ISDRS 2009)
    • Place of Presentation
      College Park, USA
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Simulation of Electron Transport in Si Nano Devices2009

    • Author(s)
      Nobuyuki Sano
    • Organizer
      International Symposium on Silicon Nano Devices in 2030 -Prospects by World's Leading Scientists
    • Place of Presentation
      東工大蔵前ホール
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Impact of the Coulomb Interaction on Nano-scale Device Characteristics: A Monte Carlo Study2009

    • Author(s)
      N. Sano
    • Organizer
      IEEE EDS Mini-colloquium for Nano CMOS and Nanowire
    • Place of Presentation
      東工大、横浜市
    • Year and Date
      2009-02-21
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Discrete Impurity and Mobility in Drift-Diffusion Simulations for Device Characteristics Variability2009

    • Author(s)
      T. Karasawa, K. Nakanishi, and N.Sano
    • Organizer
      2009 International Semiconductor Device Research Symposium (ISDRS 2009)
    • Place of Presentation
      College Park, U.S.A
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source2009

    • Author(s)
      M.V. Fischetti, S. Jin, T. -w. Tang, P. Asbeck, Y. Taur, S.E. Laux, N. Sano
    • Organizer
      International Workshop on Computational Electronics (IWCE-13)
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Impact of the Coulomb Interaction on Nano-scale Device Characteristics : A Monte Carlo Study2009

    • Author(s)
      N.Sano
    • Organizer
      IEEE EDS Mini-colloquium for Nano CMOS and Nanowire
    • Place of Presentation
      東工大, 横浜市
    • Year and Date
      2009-02-21
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] Numerical Analysis of Electron Transport in Quasi Quantum Dot Superlattice2009

    • Author(s)
      K. Yoshida, Y. Okada and N. Sano
    • Organizer
      Workshop on Information, Nano and Photonics Technology 2009 (WINPTech2009)
    • Place of Presentation
      Kobe University
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Simulation of Electron Transport in Si Nano Devices2009

    • Author(s)
      (INVITED) N. Sano
    • Organizer
      G-COE PICE International Symposium on Silicon Nano Devices in 2030-Prospects by World's Leading Scientists
    • Place of Presentation
      Tokyo Institute of Technology, Tokyo
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Self-Consistent Monte Carlo Device Simulations under Nano-Scale Device Structures : Role of Coulomb interaction, Degeneracy, and Boundary Condition2009

    • Author(s)
      K. Nakanishi, T. Uechi, and N. Sano
    • Organizer
      IEEE International Electron Devices Meeting (IEDM-2009)
    • Place of Presentation
      Baltimore
    • Data Source
      KAKENHI-PROJECT-21360160
  • [Presentation] Impact of the Coulomb Interaction on Nano-scale Device Characteristics: A Monte Carlo Study2009

    • Author(s)
      Nobuyuki Sano
    • Organizer
      IEEE EDS Mini-colloquium for Nano-CMOS and Nano-wire
    • Place of Presentation
      Tokyo Inst. Tech, Yokohama
    • Year and Date
      2009-02-21
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] Simulation of Electron Transport in Si Nano Devices2009

    • Author(s)
      N. Sano
    • Organizer
      G-COE PICE International Symposium on Silicon Nano Devices in 2030 - Prospects by World's Leading Scientists
    • Place of Presentation
      Tokyo Institute of Technology
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Numerical Analysis of Electron Transport in Quasi Quantum Dot Superlattice2009

    • Author(s)
      K. Yoshida, Y. Okada, N. Sano
    • Organizer
      Workshop on Information, Nano and Photonics Technology 2009 (WINPTech2009)
    • Place of Presentation
      Kobe University
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Self-Consistent Monte Carlo Device Simulations under Nano-Scale Device Structures: Role of Coulomb interaction, Degeneracy, and Boundary Condition2009

    • Author(s)
      K. Nakanishi, T. Uechi, N. Sano
    • Organizer
      IEEE International Electron Devices Meeting (IEDM-2009)
    • Place of Presentation
      Baltimore, USA
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] 3D Monte Carlo Simulations of Nano-scale Devices: Impact of Coulomb Interaction on Device Characteristics2008

    • Author(s)
      N. Sano, T. Uechi, T. Fukui
    • Organizer
      Technical Seminar, International Conference on Solid State Materials and Devices (SSDM-2008)
    • Place of Presentation
      Tsukuba
    • Year and Date
      2008-09-23
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] 3D Monte Carlo Simulations of Nano-scale Devices : Impact of Coulomb Interaction on Device Characteristics2008

    • Author(s)
      N.Sano, T.Uechi, and T.Fukui
    • Organizer
      Technical Seminar, International Conference on Solid State Materials and Devices (SSDM-2008)
    • Place of Presentation
      Tsukuba
    • Year and Date
      2008-09-23
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] Impacts of Random Dopant Fluctuation on Transient Characteristics in CMOS Inverters : A Device Simulation Study2008

    • Author(s)
      S.Toriyama, K.Matsuzawa, and N.Sano
    • Organizer
      International Conference on Solid State Materials and Devices (SSDM-2008)
    • Place of Presentation
      Tsukuba (Proc. SSDM, pp.892-893 (2008))
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] Impacts of Random Dopant Fluctuation on Transient Characteristics in CMOS Inverters: A Device Simulation Study2008

    • Author(s)
      S. Toriyama, K. Matsuzawa, N. Sano
    • Organizer
      International Conference on Solid State Materials and Devices (SSDM-2008)
    • Place of Presentation
      Tsukuba
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Scaling Dependence of Electron Transport in Nano-scale Shottky Barrier MOSFETs. International Conference on Solid State Materials and Devices (SSDM-2008)2008

    • Author(s)
      Shuichi Toriyama and Nobuyuk Sano
    • Organizer
      September 24-26, 2008
    • Place of Presentation
      Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Scaling Dependence of Electron Transport in Nano-scale Shottky Barrier MOSFETs2007

    • Author(s)
      S.Toriyama and N.Sano
    • Organizer
      International Workshop on Computational Electronics (IWCE-12)
    • Place of Presentation
      Amherst (Proc. IWCE, pp.141-142 (2007))
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] Electron Transport Simulations Including Full Coulomb Interaction in Si2007

    • Author(s)
      T. Fukui, T. Uechi, N. Sano
    • Organizer
      International Workshop on Computational Electronics (IWCE-12)
    • Place of Presentation
      Amherst, USA
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Electron Transport Simulations Including Full Coulomb Interaction in Si2007

    • Author(s)
      Takayuki, Fukui・Tadayoshi, Uechi・Nobuyuki, Sano
    • Organizer
      International Workshop on Computational Electronics (IWCE-12)
    • Place of Presentation
      Amherst, MA, USA
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Schottky Barrier MOSFETs as Resonant Tunneling Devices2007

    • Author(s)
      S. Toriyama, N. Sano
    • Organizer
      International Conference on Solid State Materials and Devices (SSDM-2007)
    • Place of Presentation
      Tsukuba
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Scaling Dependence of Electron Transport in Nano-scale Shottky Barrier MOSFETs2007

    • Author(s)
      S. Toriyama, N. Sano
    • Organizer
      International Workshop on Computational Electronics (IWCE-12)
    • Place of Presentation
      Amherst, USA
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Schottky Barrier MOSFETs as Resonant Tunneling Devices2007

    • Author(s)
      S.Toriyama, and N.Sano
    • Organizer
      International Conference on Solid State Materials and Devices (SSDM-2007)
    • Place of Presentation
      Tsukuba (Proc. SSDM, pp.48-49 (2007))
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] 3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes2007

    • Author(s)
      Takayuki Fukui, Tadayoshi Uechi, and Nobuyuki Sano
    • Organizer
      15-th International Conference on Nonequilibrium Carrier Transport in Semiconductors(HCIS-15)
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] Effects of Gate-Edge Metamorphoses (GEM) on Device Characteristics of Scaled MOSFETs2007

    • Author(s)
      T.Yamada and N.Sano
    • Organizer
      2007 International Semiconductor Device Research Symposium (ISDRS 2007)
    • Place of Presentation
      College Park (Proc. ISDRS, p.WP8-01 (2007))
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] 3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes2007

    • Author(s)
      T.Uechi, T.Fukui, and N.Sano
    • Organizer
      15-th International Conference on Nonequilibrium Carrier Transport in Semiconductors (HCIS-15)
    • Place of Presentation
      Tokyo (Proc. HCIS-15, p.89 (2007))
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] 3D Monte Carlo Analysis ofpotential Fluctuations under High Electron Concentrations2007

    • Author(s)
      T. Uechi, T. Fukui, N. Sano
    • Organizer
      International Workshop on Computational Electronics (IWCE-12)
    • Place of Presentation
      Amherst, USA
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] 3D Monte Carlo Analysis ofpotential Fluctuations under High Electron Concentrations2007

    • Author(s)
      T.Uechi, T.Fukui, and N.Sano
    • Organizer
      International Workshop on Computational Electronics (IWCE-12)
    • Place of Presentation
      Amherst (Proc. IWCE, pp.128-129 (2007))
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] Consistency of Boundary Conditions in Nonequilibrium Green's Function Simulations2007

    • Author(s)
      S.Sato, H.Kusaka, and N.Sano
    • Organizer
      International Workshop on Computational Electronics (IWCE-12)
    • Place of Presentation
      Amherst (Proc. IWCE, pp.102-103 (2007))
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] Effects of Gate-Edge Metamorphoses (GEM) on Device Characteristics of Scaled MOSFETs2007

    • Author(s)
      T. Yamada, N. Sano
    • Organizer
      2007 International Semiconductor Device Research Symposium (ISDRS 2007)
    • Place of Presentation
      College Park, USA
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Electron Transport Simulations Including Full Coulomb Interaction in Si2007

    • Author(s)
      T.Fukui, T.Uechi, and N.Sano
    • Organizer
      International Workshop on Computational Electronics (IWCE-12)
    • Place of Presentation
      Amherst (Proc. IWCE, pp.102-103 (2007))
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] 3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes2007

    • Author(s)
      T. Uechi, T. Fukui, N. Sano
    • Organizer
      15-th International Conference on Nonequilibrium Carrier Transport in Semiconductors (HCIS-15)
    • Place of Presentation
      Tokyo
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Consistency of Boundary Conditions in Nonequilibrium Green's Function Simulations2007

    • Author(s)
      S. Sato, H. Kusaka, N. Sano
    • Organizer
      International Workshop on Computational Electronics (IWCE-12)
    • Place of Presentation
      Amherst, USA
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Hot Electrons Associated with the Long-Range Coulomb Interaction under the High-Density Regime2006

    • Author(s)
      T. Uechi, N. Sano
    • Organizer
      2006 VLSI-TSA Technology Symposium
    • Place of Presentation
      Hsinshu, Taiwan
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Device Simulation of Random Dopant Effects in Ultra- small MOSFETs Based on Advanced Physical Models2006

    • Author(s)
      S. Toriyama, D. Hagishima, K. Matsuzawa, N. Sano
    • Organizer
      International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2006)
    • Place of Presentation
      Montley, USA
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Device Simulation of Random Dopant Effects in Ultra- small MOSFETs Based on Advanced Physical Models2006

    • Author(s)
      S.Toriyama, D.Hagishima, K.Matsuzawa and N.Sano
    • Organizer
      International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2006)
    • Place of Presentation
      Montley (Proc. SISPAD, pp.145-146 (2006))
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures2006

    • Author(s)
      H. Kusaka, N. Sano
    • Organizer
      International Conference on Solid State Materials and Devices (SSDM-2006)
    • Place of Presentation
      Yokohama
    • Data Source
      KAKENHI-PROJECT-18063004
  • [Presentation] Hot Electrons Associated with the Long-Range Coulomb Interaction under the High-Density Regime2006

    • Author(s)
      T.Uechi and N.Sano
    • Organizer
      2006 VLSI-TSA Technology Symposium
    • Place of Presentation
      Hsinshu, Taiwan (Proc. 2006 VLSI-TSA, pp.141-142 (2006))
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures2006

    • Author(s)
      H.Kusaka and N.Sano
    • Organizer
      International Conference on Solid State Materials and Devices (SSDM-2006)
    • Place of Presentation
      Yokohama (Proc. SSDM, pp.356-357 (2006))
    • Data Source
      KAKENHI-PROJECT-18360160
  • [Presentation] Screening Effect on Si Junctionless Nanowire Transistors

    • Author(s)
      A. Ueda, M. Luisier, K. Yoshida, S. Honda, and N. Sano
    • Organizer
      Computational Science Workshop 2014 (CSW2014)
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2014-08-20 – 2014-08-22
    • Data Source
      KAKENHI-PROJECT-24360130
  • [Presentation] Effect of Impurity Scattering on Mobility in Si Nanowire Junctionless FETs

    • Author(s)
      A. Ueda, M. Luisier, and N. Sano
    • Organizer
      2014 International Workshop on Computational Electronics (IWCE-17)
    • Place of Presentation
      Paris, France
    • Year and Date
      2014-06-03 – 2014-06-06
    • Data Source
      KAKENHI-PROJECT-24360130
  • [Presentation] Monte Carlo Study of the long-range Coulomb interaction for Junctionless Transistors

    • Author(s)
      K. Yoshida, and N. Sano
    • Organizer
      2014 International Workshop on Computational Electronics (IWCE-17)
    • Place of Presentation
      Paris, France
    • Year and Date
      2014-06-03 – 2014-06-06
    • Data Source
      KAKENHI-PROJECT-24360130
  • [Presentation] Conduction and Spin Transport via Edge States in Randomly Hydrogenated Graphene Nano-Ribbon

    • Author(s)
      K. Inuzuka, S. Honda, and N. Sano
    • Organizer
      Computational Science Workshop 2014 (CSW2014)
    • Place of Presentation
      Tsukuba, Ibaraki
    • Year and Date
      2014-08-20 – 2014-08-22
    • Data Source
      KAKENHI-PROJECT-24360130
  • [Presentation] Role of Coulomb Interaction in Nanoscale MOSFETs: A Theoretical Viewpoint

    • Author(s)
      Nobuyuki Sano and Katsuhisa Yoshida
    • Organizer
      International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2014) Workshop
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2014-09-08 – 2014-09-11
    • Invited
    • Data Source
      KAKENHI-PROJECT-24360130
  • 1.  NATORI Kenji (20241789)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 2.  NAKANISHI Kohei
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 3 results
  • 3.  中村 淳 (50277836)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  山部 紀久夫 (10272171)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  SHIBANO Nozomi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 6.  YOSHIDA Katsuhisa
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 7.  KARASAWA Takahiko
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 8.  上地 忠良
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  福井 貴之
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  本多 周太
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 11.  岡田 至崇
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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