Mori Masayuki 森雅之

… Alternative Names

MORI Masayuki 森雅之

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Researcher Number	90303213
Other IDs
Affiliation (Current)	2025: 富山大学, 学術研究部工学系, 教授
Affiliation (based on the past Project Information) *help	2024: 富山大学, 学術研究部工学系, 教授 2019 – 2021: 富山大学, 学術研究部工学系, 准教授 2018: 富山大学, 大学院理工学研究部(工学), 准教授 2016: 富山大学, 理工学研究部(工学), 准教授 2016: 富山大学, 大学院理工学研究部, 准教授 … More 2015 – 2016: 富山大学, 大学院理工学研究部(工学), 准教授 2014: 富山大学, その他の研究科, 准教授 2012 – 2013: 富山大学, 大学院理工学研究部(工学), 准教授 2012: 富山大学, 大学院・理工学研究部, 准教授 2010 – 2011: 富山大学, 理工学研究部(工学), 准教授 2010: 富山大学, 大学院・理工学研究部, 助教 2009: University of Toyama 2009: University of Toyama, 理工学研究部, 助教 2008: University of Toyama, 理工学研究部(工学), 助教 2007: University of Toyama, 理工学研究部, 助教 Less
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Electron device/Electronic equipment
Keywords	Principal Investigator InSb / 表面再構成制御成長法 / MOSFET / GaSb / Al2O3 / ALD / ヘテロエピタキシャル / 界面準位 / ゲート絶縁膜 / ヘテロエピタキシャル成長 … More / CMOS / 双晶 / 低成長レート / pMOSFET / 積層順 / GaSb単分子層 / Heteroepitaxy / Surface reconstruction / MBE / ナノスフィアリソグラフィー / マニピュレータ / MOSFETs / SOI基板 / オーバーラップ構造 / 選択成長 / 表面再構成 / 短チャネル化 / InGaSb / Si(111) / Si(111)基板 / FET / MOSダイオード / Al_2O_3 / SOI / ヘテロエピタキシー / quasi-pseudomorphic QW-MOSFETs / KOH / AIInSb / 量子井戸 / ラインアンドスペース / リソグラフィー / Si / 電子デバイス・集積回路 … More Except Principal Investigator 共鳴トンネル / InP / 発振器 / 異種材料デバイス集積技術 / マイクロ・ナノデバイス / パルス / 異種材料集積 / サンプリング / MEMS / テラヘルツ / FM信号 / ΔΣ変調 / 振動センサ / 変位センサ / エアブリッジ / 増幅器 / THz / 分布定数線路 Less

Si基板上へのInSb系超高速・超低消費電力デバイスの作製と評価Principal Investigator
- Principal Investigator
  
  森雅之
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  University of Toyama
Study of InSb-related CMOS on Si substrate with surface reconstruction controled epitaxyPrincipal Investigator
- Principal Investigator
  
  Mori Masayuki
- Project Period (FY)
  2018 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  University of Toyama
Frequency delta sigma modulation position snsors based on a reflected electromagnetic wave resonance
- Principal Investigator
  
  Koichi Maezawa
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Toyama
Study of InSb-CMOS on Si subustrate by using surface reconstruction controlled epitaxyPrincipal Investigator
- Principal Investigator
  
  Mori Masayuki
- Project Period (FY)
  2013 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Toyama
Studies on THz sampling and signal generation technologies based on MEMS/resonant tunneling diode integration
- Principal Investigator
  
  Maezawa Koichi
- Project Period (FY)
  2013 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Toyama
Fabrication of InSb-based high-speed and low power devices on Si by using surface reconstruction controlled epitaxyPrincipal Investigator
- Principal Investigator
  
  MORI Masayuki
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Toyama
Active Transmission Lines Loaded with Resonant Tunneling Diodes and Their Application to THz Signal Generation and Processing
- Principal Investigator
  
  MAEZAWA Koichi
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Toyama
Fabrication of InSb quantum well on Si using surface reconstruction Assisted growth method and its application for ultra-fast FETPrincipal Investigator
- Principal Investigator
  
  MORI Masayuki
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Toyama

[Journal Article] Effect of flux ratio on GaSb films grown at a low temperature on Si(111)2019
- Author(s)
  A. A. Md. Monzur-Ul-Akhir, Masayuki Mori, Koihci Maezawa
- Journal Title
  
  Proceedings of ICIEV-&-ICIVPR 2019
  
  Volume: 1 Pages: 312-317
- DOI
  10.1109/iciev.2019.8858576
- Data Source
  KAKENHI-PROJECT-18H01496
[Journal Article] An investigation of the crystalline nature for GaSb films on Si(111) at varied growthtemperature and growth rate2019
- Author(s)
  A. A. Md. Monzur-Ul-Akhir, Masayuki Mori, Koihci Maezawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58
- NAID
  210000156699
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18H01496
[Journal Article] Experimental demonstration of strain detection using resonant tunneling delta-sigma modulation sensors2017
- Author(s)
  Takumi Tajika, Yuichiro Kakutani, Masayuki Mori and Koichi Maezawa
- Journal Title
  
  Phys. Status Solidi A
  
  Volume: 214 Issue: 3 Pages: 1600548-1600548
- DOI
  10.1002/pssa.201600548
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25249042
[Journal Article] Heteroepitaxial growth of InGaSb on GaSb/Si(111)-√3x√3-Ga surface phase with two step growth method to investigate the impact of high-quality GaSb buffer layer2016
- Author(s)
  A.A.Mohammad Monzur-Ul-Akhir, Masayuki Mori and Koichi Maezawa
- Journal Title
  
  Phys. Status Solidi B
  
  Volume: 254 Issue: 2
- DOI
  10.1002/pssb.201600528
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25289099
[Journal Article] Resonant Tunneling Super Regenerative Detectors Detecting Higher Frequency Signals than Their Free-Running Oscillation Frequency2015
- Author(s)
  J. Pan, Y. Kakutani, T. Nakayama, M. Mori, K. Maezawa
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: E98.C Issue: 3 Pages: 260-266
- DOI
  10.1587/transele.E98.C.260
- NAID
  130004841713
- ISSN
  0916-8524, 1745-1353
- Language
  English
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25249042
[Journal Article] 溶融Gaバンプを用いたFluidic Self-Assemblyで配置された微小デバイスの熱的信頼性2014
- Author(s)
  中野純、柴田知明、森田弘樹、坂本宙、森雅之、前澤宏一
- Journal Title
  
  電子情報通信学会論文誌 C
  
  Volume: J97-C Pages: 124-125
- NAID
  110009798392
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249042
[Journal Article] Possibility of THz detection with resonant tunneling super regenerative detectors based on extremely high order harmonics2013
- Author(s)
  K. Maezawa, J. Pan, D. Wu, Y. Kakutani, J. Nakano, M. Mori
- Journal Title
  
  IEICE Electron. Express
  
  Volume: 10 Issue: 20 Pages: 20130676-20130676
- DOI
  10.1587/elex.10.20130676
- NAID
  130003383464
- ISSN
  1349-2543
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249042
[Journal Article] Fluidic Self-Assembly Using Molten Ga Bumps and Its Application to Resonant Tunneling Diodes2013
- Author(s)
  J. Nakano, T. Shibata, H. Morita, H. Sakamoto, M. Mori, K. Maezawa
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 11R Pages: 116501-116501
- DOI
  10.7567/jjap.52.116501
- NAID
  210000143078
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249042
[Journal Article] Effective mobility enhancement in Al2O3/InSb/Si quantum well MOSFETs for thin InSb channel layer.2013
- Author(s)
  T. Ito, A. Kadoda, K. Nakayama, Y. Yasui, M. Mori, K. Maezawa, E. Miyazaki, T. Mizutani
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: Vol.52 Issue: 4S Pages: 04CF01-04CF01
- DOI
  10.7567/jjap.52.04cf01
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560323
[Journal Article] Effective mobility enhancement in Al2O3/InSb/Si quantum well MOSFETs for thin InSb channel layer2013
- Author(s)
  T. Ito, A. Kadoda, K. Nakayama, Y. Yasui, M. Mori, K. Maezawa, E. Miyazaki, T. Mizutani
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 52
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560323
[Journal Article] Characterization of Al2O3/InSb/Si MOS diode having an various InSb thicknesses grown on Si(111) substrate2012
- Author(s)
  A. Kadoda, T. Iwasugi, K. Nakatani, K. Nakayama, M. Mori, K. Maezawa, E. Miyazaki, T. Mizutani
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: Vol.27 Issue: 4 Pages: 045007-045007
- DOI
  10.1088/0268-1242/27/4/045007
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560323
[Journal Article] Characterization of Al2O3/InSb/Si MOS diode having various InSb thicknesses grown on Si(111) substrates2012
- Author(s)
  A. Kadoda, T. Iwasugi, K. Nakatani, K. Nakayama, M. Mori, K. Maezawa, E. Miyazaki, T. Mizutani
- Journal Title
  
  Semiconducter Science and Technology
  
  Volume: 27
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560323
[Journal Article] Effect of initial In coverage for preparation of InSb bilayer on electrical properties of InSb films grown by surface reconstruction controlled epitaxy2012
- Author(s)
  M. Mori, Y. Yasui, K. Nakayama, K. Nakatani, K. Maezawa
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 51
- NAID
  210000140253
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560323
[Journal Article] The effects of deposition conditions of InSb first layer on electrical properties of n-type InSb films grown with two step growth method via InSb bilayer2011
- Author(s)
  S. Khamseh, Y. Yasui, K. Nakayama, K. Nakatani, M. Mori, K. Maezawa
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560323
[Journal Article] The effect of initial In coverage for preparation of InSb bilayer on electrical properties of InSb films grown by surface reconstruction ontrolled epitaxy2011
- Author(s)
  M.Mori, Y.Yasui, K.Nakayama, K.Nakatani, K.Maezawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 2S Pages: 02BH03-02BH03
- DOI
  10.1143/jjap.51.02bh03
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560323
[Journal Article] Step hall measurement of InSb films grown on Si(111) substrate using InSb bi-layer2011
- Author(s)
  K. Nakayama, K. Nakatani, S. Khamseh, M. Mori, K. Maezawa
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560323
[Journal Article] The effects of deposition conditions of InSb first layer on electrical properties of n-type InSb films grown with two step growth method via InSb bilayer2011
- Author(s)
  S.Khamseh, Y.Yasui, K.Nakayama, K.Nakatani, M.Mori, K.Maezawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 4S Pages: 04DH13-04DH13
- DOI
  10.1143/jjap.50.04dh13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560323
[Journal Article] InSb films grown on the V-grooved Si(001) substrate with InSb bi-layer2010
- Author(s)
  M. Mori, S. Khamseh, T. Iwasugi, K. Nakatani, K. Murata, M. Saito, K. Maezawa
- Journal Title
  
  Physics Procedia 3
  
  Pages: 1335-1339
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] InSb films grown on the V-grooved Si(001) substrate with InSb bi-layer2010
- Author(s)
  M.Mori, S.Khamseh, T.Iwasugi, K.Nakatani, K.Murata, M.Saito, K.Maezawa
- Journal Title
  
  Physics Procedia 3
  
  Pages: 1335-1339
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] InSb films grown on the V-grooved Si(001) substrate with InSb bi-layer2010
- Author(s)
  M. Mori, S. Khamseh, T. Iwasugi, K. Nakatani, K. Murata, M. Saito, K. Maezawa
- Journal Title
  
  Physics Procedia
  
  Volume: 3 Pages: 1335-1339
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560323
[Journal Article] Heteroepitaxial growth of InSb films on the patterned Si(001) substrate2010
- Author(s)
  T. Iwasugi, M. Mori, H. Igarashi, K. Murata, M. Saito, K. Maezawa
- Journal Title
  
  Physics Procedia 3
  
  Pages: 1329-1333
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] Step hall measurement of InSb films grown on Si (111) substrate using InSb bi-layer2010
- Author(s)
  K.Nakayama, K.Nakatani, S.Khamash, M.Mori, K.Maeiawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560323
[Journal Article] A Third order harmonic oscillator based on coupled resonant tunneling diode pair oscillators2010
- Author(s)
  K.Maezawa, T.Ohe, K.Kasahara, M.Mori
- Journal Title
  
  IEICE Transactions Electronics
  
  Volume: E93-C Pages: 1290-1294
- NAID
  10027365925
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360155
[Journal Article] Heteroepitaxial growth of InSb films on the patterned Si(001) substrate2010
- Author(s)
  T.Iwasugi, M.Mori, H.Igarashi, K.Murata, M.Saito, K.Maezawa
- Journal Title
  
  Physics Procedia 3
  
  Pages: 1329-1333
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] A Third order harmonic oscillator based on coupled resonant tunneling diode pair oscillators2010
- Author(s)
  前澤宏一, T.Ohe, K.Kasahara, M.Mori
- Journal Title
  
  IETCE Transactions Electronics Vol.E93-C, No.8
  
  Pages: 1290-1294
- NAID
  10027365925
- Data Source
  KAKENHI-PROJECT-20360155
[Journal Article] Heteroepitaxial growth of rotate AlInSb layer mediated by InSb bi-layer on Si(111) substrate2009
- Author(s)
  M.Saito, M.Mori, K.Ueda, K.Maezawa
- Journal Title
  
  Physica Status Solidi (c) 6
  
  Pages: 1497-1500
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] Heteroepitaxial growth of InSb films on V-grooved Si(001) substrate2009
- Author(s)
  M.Mori, H.Igarashi, T.Iwasugi, K.Murata, K.Maezawa, M.Saito
- Journal Title
  
  e-Journal of Surface Science and Nano technology 7
  
  Pages: 669-672
- NAID
  130004934077
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] Heteroepitaxial growth of rotate AlInSb layer mediated by InSb bi-layer on Si(111) substrate2009
- Author(s)
  M. Saito, M. Mori, K. Ueda, K. Maezawa
- Journal Title
  
  Phys. Stat. Sol. (c) 6,No.6
  
  Pages: 1497-1500
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] Possibility of Terahertz Amplification by Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs2009
- Author(s)
  K.Maezawa, T.Sakamoto, K.Kasahara, M.Mori
- Journal Title
  
  Jpn.J.Appl.Phys. 48
  
  Pages: 124503-124503
- NAID
  40016890502
- Data Source
  KAKENHI-PROJECT-20360155
[Journal Article] Heteroepitaxial growth of InSb films on V-grooved Si(001) substrate2009
- Author(s)
  M. Mori, H. Igarashi, T. Iwasugi, K. Murata, K. Maezawa, M. Saito
- Journal Title
  
  e-Journal of Surface Science and Nano Technology 7
  
  Pages: 669-672
- NAID
  130004934077
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] High-temperature growth of heteroepitaxial InSb films on Si(111) substrate via the InSb bi-layer2009
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, K. Maezawa
- Journal Title
  
  J. Cryst. Growth 311
  
  Pages: 1692-1695
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] High quality InSb films grown on Si(111) substrate via InSb bi-layer2009
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, C. Tatsuyama, K. Maezawa
- Journal Title
  
  e-Journal of Surface Science and Nano Technology Vol.7
  
  Pages: 145-148
- NAID
  130004439133
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] High quality InSb films grown on Si(111) substrate via InSb bi-layer2009
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, C. Tatsuyama, K. Maezawa
- Journal Title
  
  e-J. Surf. Sci. Nanotech 7
  
  Pages: 145-148
- NAID
  130004439133
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] eteroepitaxial InSb films grown via Si(111)-√7x√3-In surface reconstruction2008
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, Y. Yamashita, C. Tatsuyama, T. Tambo, K. Maezawa
- Journal Title
  
  Phys. Stat. Sol. (c) 5,No.9
  
  Pages: 2772-2774
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] Crystal orientations of InSb films on a Si(111) substrate by inserting AlSb buffer layer2008
- Author(s)
  K. Murata, N.B. Ahmad, M. Mori, T. Tambo, K. Maezawa
- Journal Title
  
  Phys. Stat. Sol. (c) 5,No.9
  
  Pages: 2778-2780
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] Heteroepitaxial InSb films grown via Si(111)-√<7>×√<3>-In surface reconstruction2008
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, Y. Yamashita, C. Tatsuyama, T. Tamho K. Maezawa
- Journal Title
  
  Phys. Stat. Sol. (c) 5
  
  Pages: 2772-2774
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] Crystal orientations of InSb films on a Si(111) substrate by inserting AISb buffer layer2008
- Author(s)
  K. Murata, N. B. Ahmad, M. Mori, T. Tambo, K. Maezawa
- Journal Title
  
  Phys. Stat. Sol. (c) 5
  
  Pages: 2778-2780
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate2008
- Author(s)
  M. Saito, M. Mori, K. Maezawa
- Journal Title
  
  Appl. Surf. Sci. 254
  
  Pages: 6052-6054
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] Effect of the AlSb buffer layer thickness on heteroepitaxial growth of InSb films on a Si (001) substrate2007
- Author(s)
  M. Mori, K. Murata, N. Fujimoto, C. Tatsuyama. T. Tambo
- Journal Title
  
  Thin Solid Films 515
  
  Pages: 7861-7865
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760233
[Journal Article] Heteroepitaxial growth of InSb films on the patterned Si(001) substrate
- Author(s)
  T. Iwasugi, M. Mori, H. Igarashi, K. Murata, M. Saito, K. Maezawa
- Journal Title
  
  Physics Procedia
  
  Volume: 3 Pages: 1329-1333
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Influence of Areal Ratio of InSb and GaSb bi-layers on Growth of InGaSb Thin Films on Si(111) Substrate2021
- Author(s)
  Masayuki MORI, Jotaro INOUE, Koichi MAEZAWA
- Organizer
  The Eighth International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01496
[Presentation] InSb/Si(111)上へのGaSb薄膜成長における基板温度と膜厚の依存性2020
- Author(s)
  橋本拓磨、森雅之、前澤宏一
- Organizer
  令和2年度(2020年)応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-18H01496
[Presentation] Si(111) 基板上へのGaSb薄膜成長における基板温度依存性2020
- Author(s)
  白山綾輔、森雅之、前澤宏一
- Organizer
  令和2年度(2020年)応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-18H01496
[Presentation] 表面再構成制御成長法を用いたSi(111)基板上へのIn0.2Ga0.8Sbエピタキシャル成長に関する研究2020
- Author(s)
  井上丈太朗、森雅之、前澤宏一
- Organizer
  令和2年度(2020年)応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-18H01496
[Presentation] Effect of flux ratio on GaSb films grown at a low temperature on Si(111)2019
- Author(s)
  A.A. Md. Monzur-Ul-Akhir, Masayuki Mori, and Koichi Maezawa
- Organizer
  8th International Conference on Informatics, Electronics & Vision (ICIEV)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01496
[Presentation] 表面再構成制御法を用いたSi(111)基板上へのIn0.2Ga0.8Sbエピタキシャル成長2018
- Author(s)
  五十嵐廉、森雅之、前澤宏一
- Organizer
  2018年第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H01496
[Presentation] Effect of Flux Ratio on GaSb Films Grown at Low Temperature on Si(111)2018
- Author(s)
  A. A. M. Monzur-Ul-Akhir, M. Mori and K. Maezawa
- Organizer
  14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01496
[Presentation] GaSb/Si(111)基板上へのInSbのエピタキシャル薄膜の作製と評価2018
- Author(s)
  長橋栄臣、森雅之、前澤宏一
- Organizer
  第4回有機・無機エレクトロニクスシンポジウム
- Data Source
  KAKENHI-PROJECT-18H01496
[Presentation] Effect of Growth Rate and Temperature on GaSb Films on Si(111) Substrate2018
- Author(s)
  A. A. M. Monzur-Ul-Akhir, M. Mori and K. Maezawa
- Organizer
  14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01496
[Presentation] A Study of Flux Ratio Effeting GaSb Growth at Low Temperature2018
- Author(s)
  A. A. M. Monzur-Ul-Akhir, M. Mori and K. Maezawa
- Organizer
  平成30年度応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-18H01496
[Presentation] A Study of Growth Rate and Temperature Effecting GaSb Growth2018
- Author(s)
  A. A. M. Monzur-Ul-Akhir, M. Mori and K. Maezawa
- Organizer
  平成30年度応用物理学会北陸・信越支部学術講演会
- Data Source
  KAKENHI-PROJECT-18H01496
[Presentation] Growth of high quality InSb channel layer with InxGa1-xSb heteroepitaxial film on Si2018
- Author(s)
  A.A. Mohammad Monzur-Ul-Akhir、森　雅之、前澤宏一
- Organizer
  電子情報通信学会、電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-18H01496
[Presentation] 共鳴トンネル素子を装荷した伝送線路発振器の高調波生成に関する線形モデル解析2017
- Author(s)
  前澤宏一、岸　拓郎、森　雅之
- Organizer
  電子情報通信学会、電子デバイス研究会
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] Fluidic Self-Assembly高効率化実験のためのダミーブロック作製2016
- Author(s)
  高山一希、中野友寛、水戸俊宏、森雅之、前澤宏一
- Organizer
  平成28年応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  富山
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] 周波数ΔΣ変調方式を用いた共鳴トンネル歪センサ2016
- Author(s)
  前澤宏一，角谷祐一郎，田近拓巳，森雅之
- Organizer
  集積化 MEMSシンポジウム
- Place of Presentation
  平戸
- Year and Date
  2016-10-24
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] Heteroepitaxial growth of InGaSb on GaSb/Si(111)-√3x√3-Ga surface phase with two step growth method2016
- Author(s)
  A.A.Md.Monzur-Ul-Akhir, Masayuki Mori, and Koichi Maezawa
- Organizer
  43rd International Symposium on Compound Semiconductors (ISCS)
- Place of Presentation
  富山国際会議場
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] Experimental Demonstration of Strain Detection Using Resonant Tunneling Delta-Sigma Modulation Sensors2016
- Author(s)
  Takumi Tajika, Yuichiro Kakutani, Masayuki Mori and Koichi Maezawa
- Organizer
  43rd International Symposium on Compound Semiconductors (ISCS)
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] Impulse sensitivity function study of the phase noise in resonant tunneling diode oscillators2016
- Author(s)
  K. Maezawa and M. Mori
- Organizer
  2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016)
- Place of Presentation
  Hakodate, Japan
- Year and Date
  2016-06-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] 周波数ΔΣ変調方式センサに対する位相ノイズの効果2016
- Author(s)
  前澤宏一、藤野舜也、山岡昂博、森雅之
- Organizer
  2016年電子情報通信学会総合大会
- Place of Presentation
  九州大学伊都キャンパス
- Year and Date
  2016-03-15
- Data Source
  KAKENHI-PROJECT-26630154
[Presentation] Ge(111)基板上へのInSb薄膜のエピタキシャル成長2016
- Author(s)
  三枝孝彰、森雅之、前澤宏一
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  首都大学東京
- Year and Date
  2016-07-23
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] 共鳴トンネル素子装荷伝送線路を用いた高次高調波発振器の設計指針と注入同期2016
- Author(s)
  前澤宏一、岸拓郎、森雅之
- Organizer
  2016年電子情報通信学会ソサイエティ大会
- Place of Presentation
  札幌
- Year and Date
  2016-09-20
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] 周波数ΔΣ変調器のデジタル出力センサへの応用2016
- Author(s)
  前澤宏一、藤野舜也、山岡昂博、山川雅暉、島田知輝、角谷祐一郎、田近拓巳、森　雅之
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  機械振興会館
- Year and Date
  2016-08-09
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] HEMTと空洞共振器を用いたΔΣ型マイクロフォンセンサ2016
- Author(s)
  山岡昂博、藤野舜也、山岸凌、山川雅暉、島田知輝、森雅之、前澤宏一
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  北海道大学
- Year and Date
  2016-03-03
- Data Source
  KAKENHI-PROJECT-26630154
[Presentation] Effect of growth condition of buffer layer for heteroepitaxial InSb films grown on Ge(111) substrate2016
- Author(s)
  Takaaki Mitsueda, Masayuki Mori, and Koichi Maezawa
- Organizer
  43rd International Symposium on Compound Semiconductors (ISCS)
- Place of Presentation
  富山国際会議場
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] Injection Locking and High Order Harmonic Generation in Transmission Line Oscillators Loaded with Resonant Tunneling Diodes2016
- Author(s)
  Koichi Maezawa, Takuro Kishi and Masayuki Mori
- Organizer
  40th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe(WOCSDICE)
- Place of Presentation
  Aveiro, Portugal
- Year and Date
  2016-06-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] Heteroepitaxial growth of InGaSbon HQ GaSb on Si(111) by two step growth method2016
- Author(s)
  A.A.Md. Monzur-Ul-Akhir, Masayuki Mori, Koichi Maezawa
- Organizer
  平成28年応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  富山県民会館
- Year and Date
  2016-12-10
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] Ga溶融バンプを用いたFluidic Self Assemblyによる異種材料集積化技術2015
- Author(s)
  前澤宏一、中野　純、柴田知明、森田弘樹、坂本宙、山田悟史、森雅之
- Organizer
  電子情報通信学会信頼性(R)研究会
- Place of Presentation
  青森
- Year and Date
  2015-08-27
- Invited
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] ΔΣ型歪センサのためのRTD装荷カンチレバーの検討2015
- Author(s)
  角谷祐一郎、森雅之、前澤宏一
- Organizer
  2015年電子情報通信学会ソサイエティ大会
- Place of Presentation
  東北大学川内北キャンパス
- Year and Date
  2015-09-08
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] InP HEMT micro blocks transplanted on Si substrates using Ga micro bumps2015
- Author(s)
  Satoshi Yamada, Hiroshi Sakamoto, Jun Nakano, Masayuki Mori and Koichi Maezawa
- Organizer
  Topical Workshop on Heterostructure Microelectronics 2015 (TWHM 2015)
- Place of Presentation
  Takayama, Gifu
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] A resonant tunneling delta-sigma modulator and its application to strain sensors2015
- Author(s)
  K. Maezawa, Y. Kakutani, T. Nakayama, T. Tajika, M. Mori
- Organizer
  2015 Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2015)
- Place of Presentation
  Smolenice, Slovakia
- Year and Date
  2015-06-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26630154
[Presentation] MOSFETs Based on InSb/Si (111) Heterostructures Having Various Oxide Layers2015
- Author(s)
  F. Shimizu, K. Hosotani, T. Ito, M. Mori, K. Maezawa
- Organizer
  2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)
- Place of Presentation
  Jeju Island, Korea
- Year and Date
  2015-06-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] Heteroepitaxial Growth of GaSb Films on Si(111)-√3×√3-Ga Surface Phase2015
- Author(s)
  H. Shimoyama, M. Mori, K. Maezawa
- Organizer
  International Conference on Solid State Devices and Materials(SSDM 2015)
- Place of Presentation
  Sapporo, Hokkaido
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] Proposal of a Simple MEMS Phase Shifter Based on Effective Dielectric Constant Modulation2015
- Author(s)
  D. Nakano, M. Mori, K. Maezawa, H. Ishii, H. Andoh
- Organizer
  International Conference on Solid State Devices and Materials(SSDM 2015)
- Place of Presentation
  Sapporo, Hokkaido
- Year and Date
  2015-09-27
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] Heteroepitaxial growth of InSb films on Si(100) substrate with micro facet structures2015
- Author(s)
  E. Umemura, M. Mori, T. Sakamoto, H. Shimoyama, K. Maezawa
- Organizer
  The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
- Place of Presentation
  Toki-messe, Niigata
- Year and Date
  2015-06-16
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] A Resonant Tunneling Super Regenerative Detector with Input/Output Isolation and Improved Sensitivity2015
- Author(s)
  K. Hu, J. Pan, M. Mori, K. Maezawa
- Organizer
  International Conference on Solid State Devices and Materials(SSDM 2015)
- Place of Presentation
  Sapporo, Hokkaido
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] 共鳴トンネル素子を用いたΔΣ型歪みセンサ2015
- Author(s)
  前澤宏一、角谷祐一郎、中山大周、田近拓巳、森雅之
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  金沢市
- Year and Date
  2015-07-25
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] ΔΣ型歪センサのためのRTD装荷カンチレバーの検討2015
- Author(s)
  角谷祐一郎、森雅之、前澤宏一
- Organizer
  2015年電子情報通信学会ソサイエティ大会
- Place of Presentation
  東北大学川内北キャンパス
- Year and Date
  2015-09-08
- Data Source
  KAKENHI-PROJECT-26630154
[Presentation] 共鳴トンネル素子を用いたΔΣ型歪みセンサ2015
- Author(s)
  前澤宏一、角谷祐一郎、中山大周、田近拓巳、森雅之
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  金沢市
- Year and Date
  2015-07-25
- Data Source
  KAKENHI-PROJECT-26630154
[Presentation] 共鳴トンネル発振器のセンサー応用2014
- Author(s)
  前澤宏一、潘　杰、角谷祐一郎、中野　純、森　雅之
- Organizer
  電子情報通信学会　電子デバイス研究会
- Place of Presentation
  北海道大学
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] 高性能共鳴トンネルダイオードのための溶融ガリウムバンプを用いたFluidic Self-Assembly2013
- Author(s)
  中野純、柴田知明、森田弘樹、坂本宙、森雅之、前澤宏一
- Organizer
  電子情報通信学会、電子デバイス研究会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction2013
- Author(s)
  X. Wang, M. Mori, K. Maezawa
- Organizer
  The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013)
- Place of Presentation
  Ishikawa Ongakudo, Kanazawa, Ishikawa
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] Low resistance ohmic contacts to n-InSb employing Sn-alloys2013
- Author(s)
  K. Hosotani, T. Ito, Y. Yasui, K. Nakayama, A. Kadoda, M. Mori, K. Maezawa
- Organizer
  The 2013 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Kansai Univ. Centenary Memorial Hall, Osaka
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] Growth of InSb thin films on a V-grooved Si(001) substrate2013
- Author(s)
  H. Shimoyama, Y. Yasui, T. Sakamoto, M. Mori, K. Maezawa
- Organizer
  The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013)
- Place of Presentation
  Ishikawa Ongakudo, Kanazawa, Ishikawa
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] 異種材料デバイス集積化のための低融点金属バンプの信頼性2013
- Author(s)
  坂本宙、中野純、柴田知明、森田弘樹、森雅之、前澤宏一
- Organizer
  応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  金沢工業大学
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] 溝(111)面を形成したSi(100)基板上へのInSb薄膜の成長2013
- Author(s)
  下山浩哉、森雅之、前澤宏一.
- Organizer
  2013年（平成25年）秋季第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] Selective growth of InSb using Sb-induced surface reconstruction on Si(111) substrate by molecular beam epitaxy2013
- Author(s)
  M. Mori, X. Wang, K. Maezawa
- Organizer
  12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-12)
- Place of Presentation
  Tsukuba International Congress Center, Tukuba
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] Heteroepitaxial growth of InSb thin films on a Silicon-on-Insulator substrate2013
- Author(s)
  T. Sakamoto, H. Shimoyama, Y. Yasui, M. Mori, K. Maezawa
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM 2013)
- Place of Presentation
  Hilton Fukuoka Sea Hawk, Fukuoka
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] 共鳴トンネルダイオードを用いた極短パルス生成器の高出力化2013
- Author(s)
  呉東坡、水牧勝太郎、潘杰、森雅之、前澤宏一
- Organizer
  電子情報通信学会、電子デバイス研究会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] Si(111)上のSb再構成構造を利用したInSbの選択成長2013
- Author(s)
  王昕、森雅之、前澤宏一
- Organizer
  電子情報通信学会、電子デバイス研究会(ED)
- Place of Presentation
  富山大学工学部
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] Fabrication and characterization of micromachined cantilever loaded with a resonant tunneling diode for delta-sigma type strain sensor applications2013
- Author(s)
  Y. Kakutani, Dongpo Wu, J. Pan, J. Nakano, M. Mori, K. Maezawa
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] Si基板上に直接成長した極薄InSb膜をチャネルとしたAl2O3/InSb MOSFET2013
- Author(s)
  前澤宏一、伊藤泰平、角田梓、中山幸二、安井雄一郎、森雅之、宮崎英志、水谷孝
- Organizer
  電子情報通信学会、電子デバイス研究会
- Place of Presentation
  北海道大学
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] RF large signal characterization of active transmission lines loaded with InGaAs/AlAs resonant tunneling diode pairs2013
- Author(s)
  J. Pan, D. Wu, M. Mori, K. Maezawa
- Organizer
  Topical Workshop on Heterostructure Microelectronics
- Place of Presentation
  Hakodate
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] Heteroepitaxial growth of InSb on Si by using surface reconstruction controlled epitaxy2012
- Author(s)
  M. Mori
- Organizer
  Collaborative Conference on Crystal Growth (3CG 2012)
- Place of Presentation
  Orland, USA
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Heteroepitaxial growth of AlInSb on a Si(111) substrate using surface reconstruction controlled epitaxy2012
- Author(s)
  M. Mori, Y. Yasui, N. Nakayama, M. Miura, K. Maezawa
- Organizer
  the 17thInternational Conference on Molecular Beam Epitaxy (MBE2012)
- Place of Presentation
  Nara Prefectural New Public Hall, Japan
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Al2O3/InSb/Si quantum well MOSFETs having ultra-thin InSb layer2012
- Author(s)
  K. Maezawa, T. Ito, A. Kadoda, K. Nakayama, Y. Yasui, M.Mori, E. Miyazaki, T. Mizutani
- Organizer
  Device research conference 2012 (DRC)
- Place of Presentation
  Penn State Univ. PA (USA)
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Heteroepitaxial growth of InSb on Si by using surface reconstruction controlled epitaxy.2012
- Author(s)
  M. Mori
- Organizer
  Collaborative Conference on Crystal Growth (3CG2012)
- Place of Presentation
  Orland, FL (USA)
- Invited
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] High electron mobility InSb film on Si grown by surface reconstruction controlled epitaxy and its application for MOSFETs2012
- Author(s)
  M. Mori, Y. Yasui, K. Nakayama, A. Kadoda, T. Ito, K. Maezawa, C. Tatsuyama
- Organizer
  the 10thJapan-Russia Seminar on Semiconductor Surfaces (JRSSS-10)
- Place of Presentation
  Univ. of Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Heteroepitaxial growth of AlInSb on a Si(111) substrate using surface reconstruction controlled epitaxy2012
- Author(s)
  M. Mori, Y. Yasui, K. Nakayama, M. Miura, K. Maezawa
- Organizer
  The 17th International Conference on Molecular Beam Epitaxy (MBE2012)
- Place of Presentation
  Nara Prefectural New PublicHall, Nara
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] High electron mobility InSb film on Si grown by surface reconstruction controlled epitaxy and its application for MOSFETs.2012
- Author(s)
  M. Mori, Y. Yasui, K. Nakayama, A. Kadoda, T. Ito, K. Maezawa, C. Tatsuyama
- Organizer
  The 10th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS10)
- Place of Presentation
  Univ. of Tokyo, Hongo
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Al2O3/InSb/MOS diodes with an ultrathin InSb layer grown directly on Si(111) substrate using surface reconstruction controlled epitaxy.2012
- Author(s)
  K. Maezawa, A. Kadoda, T. Ito, Y. Yasui, M. Mori, E. Miyazaki, T. Mizutani
- Organizer
  11th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC)
- Place of Presentation
  Island of Porquerolles (FRANCE)
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Al2O3/InSb/Si quantum well MOSFETs having ultra-thin InSb layer2012
- Author(s)
  K. Maezawa, T. Ito, A. Kadoda, N. Nakayama, Y. Yasui, M. Mori, E. Miyazaki, T. Mizutani
- Organizer
  Device Research Conference (DRC)
- Place of Presentation
  Penn State Univ. (USA)
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] n-InSbに対するSn系オーミック電極の検討2012
- Author(s)
  細谷耕右、伊藤泰平、安井雄一郎、中山幸二、角田梓、森雅之、前澤宏一
- Organizer
  応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  富山県民会館
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Effective mobility enhanement in Al2O3/InSb/Si quantum well MOSFETs2012
- Author(s)
  T. Ito, A. Kadoda, K. Nakayama, Y. Yasui, M. Mori, K. Maezawa, E. Miyazaki, T. Mizutani
- Organizer
  2012 International Conference on Solid State Devices and Materials
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Effective mobility enhancement in Al2O3/InSb/Si quantum well MOSFETs for thin InSb channel layer2012
- Author(s)
  T. Ito, A. Kadoda, K. Nakayama, Y. Yasui, M. Mori, K. Maezawa, E. Miyazaki, T. Mizutani
- Organizer
  2012 International Conference on Solid State Devices and Materials (SSDM 2012)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Al2O3/InSb/Si MOS diodes with an ultrathin InSb layer grown directly on Si(111) substrates using surface reconstruction controlled epitaxy2012
- Author(s)
  K. Maezawa, A. Kadoda, T. Ito, Y. Yasui, M. Mori, E. Miyazaki, T. Mizutani
- Organizer
  11thExpart Evaluation & Control of Compound Seiconductors Materials & Technologies (EXMATEC)
- Place of Presentation
  Island of Porquerolles (France)
- Year and Date
  2012-05-30
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] n-InSbに対するSn系オーミック電極の検討2011
- Author(s)
  細谷耕右、伊藤泰平、安井雄一郎、中山幸二、角田梓、森雅之、前澤宏一
- Organizer
  平成24年応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  富山県民会館
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] 表面再構成制御成長法を用いたSi(111)基板上のInSb MOSダイオードの作製2011
- Author(s)
  角田梓、岩杉達矢、中谷公彦、中山幸二、森雅之、前澤宏一
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  長岡技術科学大学
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] High Frequency Oscillators based on Active Trahsmission Lines Loaded with Resonant Tunnehng Diode Pairs2011
- Author(s)
  潘杰、森雅之、前澤宏一
- Organizer
  2011年電子情報通信学会総合大会
- Place of Presentation
  東京都立大学
- Data Source
  KAKENHI-PROJECT-20360155
[Presentation] 表面再構成制御成長法を用いた高移動度InSb薄膜の成長2011
- Author(s)
  森雅之、中山幸二、中谷公彦、安井雄一郎、前澤宏一
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  名古屋大学
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] InSb単分子層を介したSi基板上への高移動度InSb薄膜の作製2011
- Author(s)
  中山浩二、安井雄一郎、中谷公彦、森雅之、前澤宏一
- Organizer
  2011年電気学会電子・情報システム部門大会
- Place of Presentation
  富山大
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] An Al2O3/InSb/Si MOS diode having an ultra-thin InSb layer2011
- Author(s)
  A. Kadoda, T. Iwasugi, K. Nakatani ,K. Nakayama, M. Mori, K. Maezawa
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM 2011)
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] 共鳴トンネルダイオードペアを装荷した右手/左手系複合伝送線路における信号増幅2011
- Author(s)
  前澤宏一、笠原康司、播杰、森雅之
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  北海道大学
- Data Source
  KAKENHI-PROJECT-20360155
[Presentation] An Al2O2/InSb/Si MOS diode having an ultra-thin InSb layer2011
- Author(s)
  A.Kadoda, T.Iwasugi, L, Nakatani, K.Nakayama, M.Mori, K.Maezawa, E.Miyazaki, T.Mizutani
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM 2011)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2011-09-29
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Si上高移動度InSb薄膜のためのInSb単分子層形成条件の最適化2011
- Author(s)
  安井雄一郎、中山幸二、中谷公彦、森雅之、前澤宏一
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Effect of initial In coverage for preparation of InSb bilayer on electrical properties of InSb films grown by surface reconstruction controlled epitaxy2011
- Author(s)
  M. Mori, Y. Yasui , K. Nakayama, K. Nakatani, K. Maezawa
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM 2011)
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] 表面再構成制御成長法を用いたSi上への高移動度InSb薄膜の成長とその応用2011
- Author(s)
  森雅之、中谷公彦、中山幸二、安井雄一郎、角田梓、岩杉達矢、前澤宏一、宮崎英志、水谷孝
- Organizer
  電気学会「シリコンナノデバイス集積化技術」調査専門委員会、「クラウド時代のユビキタス電子デバイス」調査専門委員会合同委員会
- Place of Presentation
  法政大大学
- Year and Date
  2011-11-22
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] 表面再構成制御成長法を用いた高移動度InSb薄膜の成長2011
- Author(s)
  中山幸二、中谷公彦、安井雄一郎、サラカマセ、森雅之、前澤宏一
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] 化合物半導体上におけるInSbナノワイヤーの成長2011
- Author(s)
  大川一成、河合太宮人、中谷祐介、橋本将視、森雅之、前澤宏一
- Organizer
  2011年電気学会電子・情報システム部門大会
- Place of Presentation
  富山大
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] InSb単分子層を介したSi基板上への高移動度InSb薄膜の作製2011
- Author(s)
  中山幸二、安井雄一郎、中谷公彦、森雅之、前澤宏一
- Organizer
  2011年電気学会電子・情報・システム部門大会
- Place of Presentation
  富山大学五福キャンパス
- Year and Date
  2011-09-08
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Characterization of InSb MOS diodes on Si substrates prepared by surface reconstruction controlled epitaxy2011
- Author(s)
  K.Maezawa, A.Kadoda, T.Iwasugi, K.Nakatani, K.Nakayama, K.Imaizumi, M.Mori, E.Miyazaki, T.Mizutani
- Organizer
  35^<th> Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2011)
- Place of Presentation
  Catania, Italy
- Year and Date
  2011-05-29
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] 化合物半導体上におけるInSBなのワイヤーの成長2011
- Author(s)
  大川一成、河合太宮人、中谷裕介、橋本将視、森雅之、前澤宏一
- Organizer
  2011年電気学会電子・情報・システム部門大会
- Place of Presentation
  富山大学五福キャンパス
- Year and Date
  2011-09-08
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Characterization of InSb MOS diodes on Si substrate prepared by surface reconstruction controlled epitaxy2011
- Author(s)
  K. Maezawa, A. Kadoda, T. Iwasugi, K. Nakatani, K. Nakayama, K. Imaizumi, M. Mori, E. Miyazaki, T. Mizutani
- Organizer
  35thWorkshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2011)
- Place of Presentation
  Catania, Italy
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Si上高移動度InSb薄膜のためのInSb単分子層形成条件の最適化2011
- Author(s)
  安井雄一郎、中山幸二、中谷公彦、森雅之、前澤宏一
- Organizer
  2011年秋季第72回応用物理学会学術講演開
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] 共用共振器を省略した共鳴トンネル3次高調波発信器2011
- Author(s)
  早野一起、森雅之、前澤宏一
- Organizer
  2011年電子情報通信学会総合大会
- Place of Presentation
  東京都立大学
- Data Source
  KAKENHI-PROJECT-20360155
[Presentation] High Speed Circuits Based on Resonant Tunneling Diodes and Their Application to Analog Digital Converters2010
- Author(s)
  K.Maezawa, S.Shibata, K.Takaoka, M.Mori
- Organizer
  2010 Asia-Pacific Radio Science Conference (AP-RASC' 10)
- Place of Presentation
  Toyama, Japan
- Data Source
  KAKENHI-PROJECT-20360155
[Presentation] InSb noanowires grown on a GaAs substrate using Au catalyst2010
- Author(s)
  T.Kawai, M.Mori, I.Ookawa, Y.Nakaya, K.Maezawa
- Organizer
  The 37^<th> International Symposium on Compound Semiconductors (ISCS2010)
- Place of Presentation
  高松シンボルタワー
- Year and Date
  2010-05-31
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] A Traveling Wave Amplifier Based on Composite Right/Left Handed (CRLH) Transmission Lines Periodically Loaded with Resonant Tunneling Diode Pairs2010
- Author(s)
  K.Maezawa, K.Kasahara, M.Mori
- Organizer
  22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
- Place of Presentation
  Takamatsu, Japan
- Data Source
  KAKENHI-PROJECT-20360155
[Presentation] InSb単分子層を用いた高移動度InSb薄膜のヘテロエピタキシャル成長2010
- Author(s)
  中山幸二、中谷公彦、安井雄一郎、サラカマセ、森雅之、前澤宏一
- Organizer
  平成22年度応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  金沢大学
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] GaAs基板上におけるInSbナノワイヤーの作製2010
- Author(s)
  大川一成、河合太宮人、中谷祐介、真屋和幸、橋本将視、森雅之、前澤宏一
- Organizer
  平成22年度応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  金沢大学
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Step hall measurement of InSb films grown on Si(111) with InSb bi-layer2010
- Author(s)
  K. Nakayama, Kn Nakatani, S. Tsuji, M. Mori, K. Maezawa
- Organizer
  The 3rdInternational Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2010)
- Place of Presentation
  Toyama, Japan
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] High electron mobility InSb films grown on Si(111) substrate via √7x√3-In and 2x2-In surface reconstruction2010
- Author(s)
  S. Khamseh, K. Nakatani, K. Nakayama, M. Mori, K. Maezawa
- Organizer
  2010 International Conference on Solid State Devices and Materials (SSDM 2010)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] InSb単分子層を用いた高移動度InSb薄膜のヘテロエピタキシャル成長2010
- Author(s)
  中山幸二、中谷公彦、安井雄一郎、サラカマセ、森雅之、前澤宏一
- Organizer
  平成22年度応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  金沢大学角間キャンパス
- Year and Date
  2010-11-20
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] InSb nanowires grown on a GaAs substrate using Au catalyst2010
- Author(s)
  T. Kawai, M. Mori, I. Ookawa, Y. Nakaya, K. Maezawa
- Organizer
  the 37thInternational Symposium on Compound Semiconductors (ISCS 2010)
- Place of Presentation
  Takamatsu, Japan
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Step hall measurement of InSb films grown on Si(111) with InSb bi-layer2010
- Author(s)
  K.Nakayama, K.Nakatani, S.Tsuji, M.Mori, K.Maezawa
- Organizer
  The 3^<rd> International Symposium on Organic and Inorganic Electronic Materials and Related Nano technologies (EM-NANO2010)
- Place of Presentation
  富山国際会議場
- Year and Date
  2010-06-24
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Growth of InSb films on a Si(001) substrate with V-shaped grooves via the InSb bi-layer2010
- Author(s)
  S. Khamseh, K. Nakatani, T. Iwasugi, K. Nakayama, A. Kadota, M. Mori, K. Maezawa
- Organizer
  2009年(平成21年)秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] High electron mobility InSb films grown on Si(111) with InSb bi-layer2010
- Author(s)
  K. Nakatani, K. Nakayama, S. Khamseh, M. Mori, K. Maezawa
- Organizer
  The 3rdInternational Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2010)
- Place of Presentation
  Toyama, Japan
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] High Speed Circuits Based on Resonant Tunneling Diodes and Their Application to Analog Digital Converters2010
- Author(s)
  K.Maezawa, S.Shibata, K.Takaoka, M.Mori
- Organizer
  2010 Asia-Pacific Radio Science Conference (AP-RASC'10)
- Place of Presentation
  Toyama, Japan
- Data Source
  KAKENHI-PROJECT-20360155
[Presentation] InSb MOS diode on a Si(111) substrate grown by surface reconstruction controlled epitaxy2010
- Author(s)
  A. Kadoda, T. Iwasugi, K. Nakatani, K. Nakayama, M. Mori, K. Maezawa
- Organizer
  2010 International Conference on Solid State Devices and Materials (SSDM 2010)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] InSb noanowires grown on a GaAs substrate using Au catalyst2010
- Author(s)
  T.Kawai, M.Mori, I.Ookawa, Y.N akaya, K.Maezawa
- Organizer
  GaAs基板上におけるInSbナ"イヤーの作製
- Place of Presentation
  金沢大学角間キャンパス
- Year and Date
  2010-11-20
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] 表面再構成制御成長法を用いて作製したSi上AlInSb層の特性評価2010
- Author(s)
  辻成介、中谷公彦、上田広司、森雅之、前澤宏一
- Organizer
  平成21年度応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  富山県立大学
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Highelectron mobilityInSbfilms grown on Si(111) substrate Inand2x2-In surface reconstruction2010
- Author(s)
  S.Khamseh, K.Nakatani, K.Naka vama. M.Mori. K.Maezawa
- Organizer
  2010 International Conference on Solid State Dev ices and Materials (SSDM2010)
- Place of Presentation
  東京大学本郷キャンパス
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] 表面再構成制御成長法で成長したSi(111)基板上のlnSbMosダイオードの作製2010
- Author(s)
  角田梓、岩杉達矢、中谷公彦、中山幸二、森雅之、前澤宏一
- Organizer
  平成22年度応用物群会北陸・信越支部学術講演会
- Place of Presentation
  金沢大学角間キャンパス
- Year and Date
  2010-11-20
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] InSb MOS diode on a Si(111) substrate grown by surface reconstructon controlled epitaxy2010
- Author(s)
  A.Kadoda, T.Iwasugi, K.Nakatani, K.Nakayama, M.Mori, K.Maezawa
- Organizer
  2010 International Conference on Solid State Dey ices and Materials (SSDM2010)
- Place of Presentation
  東京大学本郷キャンパス
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] 表面再構成制御成長法で成長したSi(111)基板上のInSbMOSダイオードの作製2010
- Author(s)
  角田梓、岩杉達矢、中谷公彦、中山幸二、森雅之、前澤宏一
- Organizer
  平成22年度応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  金沢大学
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] A Traveling Wave Amplifier Based on Composite Right/Left Handed (CRLH) Transmission Lines Periodically Loaded with Resonant Tunneling Diode Pairs2010
- Author(s)
  K.Maezawa, K.Kasahara, M. Mori
- Organizer
  22nd International Conferene on Indium Phosphide and Related Materials (IPRM2010)
- Place of Presentation
  Takamatsu, Japan
- Data Source
  KAKENHI-PROJECT-20360155
[Presentation] High electron mobility InSb films grownon Si (111) with InSb bi-layer2010
- Author(s)
  K.Nakatani, K.Nakavama, S.Khamaeh, M.Mori, K.Maezawa
- Organizer
  The 3^<rd> International Symposium on Organic and Inorganic Electronic Materials and Related Nano technologies (EM-NANO2010)
- Place of Presentation
  富山国際会議場
- Year and Date
  2010-06-23
- Data Source
  KAKENHI-PROJECT-22560323
[Presentation] Surface reconstruction assisted growth of InSb films on V-grooved Si(001) substrate2009
- Author(s)
  M.Mori, S.Khamseh, T.Iwasugi, K.Nakatani, K.Maezawa
- Organizer
  International Symposium on Quantum Nanophotonics and Nanoelecttronics (ISQNN2009)
- Place of Presentation
  東京大学駒場キャンパス
- Year and Date
  2009-11-18
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Au catalyst assisted MBE growth of InSb nanowires on GaAs(001) subs trate2009
- Author(s)
  T.Kawai, M.Mori, M.Hashimoto, I.Ookawa, Y.Nakaya, K.Maezawa
- Organizer
  International Symposium on Quantum Nanophotonics and Nanoelecttronics (ISQNN2009)
- Place of Presentation
  東京大学駒場キャンパス
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] InSb films grown the V-grooved Si(001) substrate with InSb bi-layer2009
- Author(s)
  M. Mori, S. Khamseh, T. Iwasugi, K. Nakatani, K. Murata, M. Saito, K. Maezawa
- Organizer
  14th International Conference on Narrow Gap Semiconductors and Systems (NGSS-14)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] 表面再構成制御成長法を用いて作製したSi上AlInSb層の特性評価2009
- Author(s)
  辻成介、中谷公彦、上田広司、森雅之、前澤宏一
- Organizer
  平成21年度応用物理学会北陸・信越支部学術演会
- Place of Presentation
  富山県立大学
- Year and Date
  2009-11-21
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Heteroepitaxial growth of InSb films on the patterned Si(001) substrate2009
- Author(s)
  T. Iwasugi, M. Mori, H. Igarashi, K. Murata, M. Saito, K. Maezawa
- Organizer
  14th International Conference on Narrow Gap Semiconductors and Systems (NGSS-14)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Growth of InSb films on a Si(001) substrate with V-shaped grooves via the InSb bi-layer2009
- Author(s)
  S.Khamseh, K.Nakatani, T.Iwasugi, K.Nakayama, A.Kadotda, M.Mori, K.Maezawa
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学五福キャンパス
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] RF small signal characterization of active transmission lines loaded by InGaAs/A1As resonant tunneling diodes2009
- Author(s)
  K.Kasahara, T.Ohe, M.Mori, K.Maezawa
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2009)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-20360155
[Presentation] Surface reconstruction assisted growth of InSb films on V-grooved Si(001) substrate International Symposium on Quantum Nanophotonics2009
- Author(s)
  M. Mori, S. Khamseh, T. Iwasugi, K. Nakatani, K. Maezawa
- Organizer
  ISQNN2009
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] RF small signal characterization of active transmission lines loaded by InGaAs/AlAs resonant tunneling diodes2009
- Author(s)
  K.Kasahara, T.Ohe, M.Mori, K.Maezawa
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2009)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-20360155
[Presentation] V字型の(111)面パターンを形成したSi(100)基板上へのInSb薄膜のヘテロエピタキシャル成長2009
- Author(s)
  岩杉達矢、森雅之、斉藤光史、五十嵐弘樹、N.B. Ahmad、村田和範、前澤宏一
- Organizer
  平成20年度応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  金沢工業大学
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] InSb films grown on the V-grooved Si(001) substrate with InSb bi-layer2009
- Author(s)
  M.Mori, S.Khamseh, T.Iwasugi, K.Nakatani, K.Murata, M.Saito, K.Maezawa
- Organizer
  14^<th> International Conference on Narrow Gap Semiconductors and Systems (NGSS-14)
- Place of Presentation
  東北大学片平キャンパス
- Year and Date
  2009-07-14
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] A third harmonic oscillator using coupled RTD pair oscillators2009
- Author(s)
  K.Maezawa T.Ohe, K.Kasahara, M.Mori
- Organizer
  Topical Workshop on Heterostructure Microelectronics (TWHM2009)
- Place of Presentation
  Nagano, Japan
- Data Source
  KAKENHI-PROJECT-20360155
[Presentation] GaAs基板上におけるInSbナノワイヤーの作製2009
- Author(s)
  河合太宮人、大川一成、中谷祐介、橋本将視、森雅之、前澤宏一
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学五福キャンパス
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜のヘテロエピタキシャル成長2009
- Author(s)
  上田広司、斉藤光史、中谷公彦、森雅之、前澤宏一
- Organizer
  平成20年度応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  金沢工業大学
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Heteroepitaxial growth of InSb films on the patterned Si(001) substrate2009
- Author(s)
  T.Iwasugi, M.Mori, H.Igarashi, K.Murata, M.Saito, K.Maezawa
- Organizer
  14^<th> International Conference on Narrow Gap Semiconductors and Systems (NGSS-14)
- Place of Presentation
  東北大学片平キャンパス
- Year and Date
  2009-07-16
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Heteroepitaxial growth of InSb films on V-grooved Si(001) substrate2008
- Author(s)
  M. Mori, M. Saito, H. Igarashi, T. Iwasugi, N.B. Ahmad, K. Maezawa
- Organizer
  5th International Symposium on Surface Science and Nanotechnology (ISSS-5)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] InSb単分子層を介したSi(111)基板上のAIInSb膜のヘテロエピタキシャル成長2008
- Author(s)
  上田広司、斉藤光史、中谷公彦、森雅之、前澤宏一
- Organizer
  平成20年度応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  金沢工業大学石川県石川郡野々市
- Year and Date
  2008-11-22
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Heteroepitaxial growth of InSb films on a Si(111) substrate via InSb bi-layer2008
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, Y. Shinmura, K. Maezawa
- Organizer
  15th International Conference on Molecular Beam Epitaxy (MBE2008)
- Place of Presentation
  Vancouver, Canada
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Si(111)基板上での30°回転InSb薄膜層形成に対するIn及びSb層の効果2008
- Author(s)
  斉藤光史、森雅之、上田広司、前澤宍一
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  金沢大学角間キャンパス
- Year and Date
  2008-06-14
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Improvement of rotated InSb films by additional In adsorption onto initial InSb bi-layer2008
- Author(s)
  M. Saito, M. Mori, C. Tatsuyama, K. Maezawa
- Organizer
  8^<th> Japan-Russia Seminar on Semiconductor Surfaces
- Place of Presentation
  Tohoku University Sendai. Japan
- Year and Date
  2008-10-21
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] High quality InSb films grown on Si(111) substrate via InSb bi-layer2008
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, C. Tatsuyama, K. Maezawa
- Organizer
  8th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-8)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Si(111)-√<7>×√<3>-In再構成構造を介したInSb薄膜のヘテロエピタキシャル成長2008
- Author(s)
  森雅之、斉藤光史、長島恭兵、上田広司、吉田達雄、前澤宏一
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  金沢大学角間キャンパス
- Year and Date
  2008-06-14
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] High quality InSb films grown on Si(111) substrate via InSb bi-layer2008
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, C. Tatsuyama, K. Maezawa
- Organizer
  8^<th> Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-8)
- Place of Presentation
  Tohoku University Sendai, Japan
- Year and Date
  2008-10-21
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] V字型の(111)面パターンを形成したSi(100)基板上へのlnSb薄膜のヘテロエピタキシャル成長2008
- Author(s)
  岩杉達矢、森雅之、斉藤光史、五十嵐弘樹、N.B. Ahmad、村田和範、前澤宏一
- Organizer
  平成20年度応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  金沢工業大学石川県石川郡野々市
- Year and Date
  2008-11-22
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] ノルスルヤティビンティアハマド、前澤宏一, (111)面パターンを形成したSi(100)基板上へのInSb薄膜のヘテロエピタキシャル成長2008
- Author(s)
  五十嵐弘樹、森雅之、斉藤光史、岩杉達矢
- Organizer
  2008年(平成20年)秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] (111)面パターンを形成したsi(100)基板上へのInSb薄膜のヘテロエピタキシャル成長2008
- Author(s)
  五十嵐弘樹、森雅之、斉藤光史、岩杉達矢、N.B. Ahmad、前澤宏一
- Organizer
  平成20年秋期応用物理学会学術講演会
- Place of Presentation
  中部大学春日井キャンパス
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜のヘテロエピタキシャル成長2008
- Author(s)
  中谷公彦、斉藤光史、上田広司、森雅之、前澤宏一
- Organizer
  2008年(平成20年)秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Heteroepitaxial growth of InSb films on a Si(111) Substrate via InSb bi-layer2008
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, Y. Shinmura, K. Maezawa
- Organizer
  15^<th> International Conference on Molecular Beam Epitaxy (MBE2008)
- Place of Presentation
  UBC, Vancouver, Canada
- Year and Date
  2008-08-04
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] InSb単分子層を介したSi(111)基板上めAIInSb薄膜のヘテロエピタキシャル成長2008
- Author(s)
  中谷公彦、斉藤光史、上田広司、森雅之、前澤宏一
- Organizer
  平成20年秋期応用物理学会学術講演会
- Place of Presentation
  中部大学春日井キャンパス
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] 共鳴トンネルダイオードペアを分散配置したアクティブ伝送線路2008
- Author(s)
  前澤宏一, 藤城翔, 笠原康司, 坂本智哉, 森雅之
- Organizer
  2008年電子情報通信学会ソサイエティ大会
- Place of Presentation
  明治大学生田キャンパス
- Year and Date
  2008-09-17
- Data Source
  KAKENHI-PROJECT-20360155
[Presentation] Heteroepitaxial growth of rotated AlInSb layer mediated by InSb bi-laver2008
- Author(s)
  M. Saito, M. Mori, K. Ueda, K. Nagashima. K. Maezawa
- Organizer
  35^<th> International Symposium on Compound Semiconductors (ISCS2008)
- Place of Presentation
  Europa-Park, Rust. Germany
- Year and Date
  2008-09-23
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Heteroepitaxial growth of rotated AlInSb layer mediated by InSb bi-layer on Si(111) substrate2008
- Author(s)
  M. Saito, M. Mori, K. Ueda, K. Nakatani, K. Maezawa
- Organizer
  35th International Symposium on Compound Semiconductors (ISCS2008)
- Place of Presentation
  Rust, Germany
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Si(111)-√7×√3-In表面再構成を介したInSb薄膜のヘテロエピタキシャル成長とその結晶性及び配向性の評価2008
- Author(s)
  長島恭兵、上田広司、斉藤光史、森雅之、丹保豊和、前澤宏一
- Organizer
  平成19年度応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  富山大学工学部
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Inprovement of rotated InSb films by additional In adsorption onto initial InSb bi-layer2008
- Author(s)
  M. Saito, M. Mori, C. Tatsuyama, K. Maezawa
- Organizer
  8th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-8)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Heteroepitaxial growth of InSb films on V-grooved Si(001) substrate2008
- Author(s)
  M. Mori, M. Saito, H. Igarashi, T. Iwasugi, N.B. Ahmad, K. Maezawa
- Organizer
  5^<th> International Symposium on Surface Science and Nanotechnology (ISSS-5)
- Place of Presentation
  Waseda University, Tokyo, Japan
- Year and Date
  2008-11-12
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] InSb単分子層/Si(111)上へのAlSb層の成長2008
- Author(s)
  新村康成、水谷文也、吉田達雄、上田広司、斉藤光史、森雅之、前澤宏一
- Organizer
  平成19年度応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  富山大学工学部
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] InSb単分子層/Si (111)上へのAlsb層の成長2007
- Author(s)
  新村康成、水谷文也、吉田達雄、上田広司、斉藤光史、森雅之、前澤宏一
- Organizer
  平成19年度応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  富山大学工学部
- Year and Date
  2007-12-01
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Si (111)-√7×√3-In表面再構成を介したInSb薄膜のヘテロエピタキシャル成長2007
- Author(s)
  長島恭兵、斉藤光史、森雅之、丹保豊和、前澤宏一
- Organizer
  2007年(平成19年)秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Domain structure of InSb films grown on Si(111) substrate2007
- Author(s)
  K. Murata, N.B. Ahmad, M. Mori, T. Tambo, K. Maezawa
- Organizer
  th International Symposium on Control of Semiconductor Interfaces (ISCSI-5)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Si(111)-√7×√3-In表面再構成を介したInSb薄膜のヘテロエピタキシャル成長2007
- Author(s)
  長島恭兵、斉藤光史、森雅之、丹保豊和、前澤宏一
- Organizer
  2007年(平成19年)秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Domain structure of InSb films grown on Si (111) substrate2007
- Author(s)
  K. Murata, N.B. Ahmad, M. Mori, T. Tambo, K. Maezawa
- Organizer
  5th International Symposium on Control of Semic onductor Interfaces (ISCSI-5)
- Place of Presentation
  首都大学東京
- Year and Date
  2007-11-13
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Heteroepitaxial growth of InSb films on a Si (111) substrate with √7x√3-In surface reconstruction2007
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Tambo, C. Tatsuyama, K. Maezawa
- Organizer
  2007 International Symposium on Organic and in organic Electronic Materials and Related Nanotechnologies (EM-NANO2007)
- Place of Presentation
  メルパルク長野
- Year and Date
  2007-06-21
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Heteroepitaxial InSb films grown via Si(111)-√7x√3-In surface reconstruction2007
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, Y. Yamashita, C. Tatsuyama, T. Tambo, K. Maezawa
- Organizer
  34th International Symposium on Compound Semiconductors (ISCS2007)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Si (111)-√7×√3-In表面再構成を介したInSb薄膜のヘテロエピタキシャル成長とその結晶性及び配向性の評価2007
- Author(s)
  長島恭兵、上田広司、斉藤光史、森雅之、丹保豊和、前澤宏一
- Organizer
  平成19年度応用物理学会北陸・信越支部学術講演会
- Place of Presentation
  富山大学工学部
- Year and Date
  2007-11-30
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate2007
- Author(s)
  M. Saito, M. Mori, K. Maezawa
- Organizer
  5th International Symposium on Control of Semiconductor Interfaces (ISCSI-5)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Heteroepitaxial growth of InSb films on a Si(111) substrate by inserting AlSb buffer layer2007
- Author(s)
  K. Murata, N.B. Ahmad, M. Mori, T. Tambo, K. Maezawa
- Organizer
  34th International Symposium on Compound Semiconductors (ISCS2007)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Heteroepitaxial growth of InSb films on a Si(111) substrate with√7x√3-In surface reconstruction2007
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Tambo, C. Tatsuyama, K. Maezawa
- Organizer
  2nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2007)
- Place of Presentation
  Nagano, Japan
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Heteroepitaxial growth of InSb films on a Si (111) substrate by inserting AISb buffer layer2007
- Author(s)
  K. Murata, N.B. Ahmad, M. Mori, T. Tambo, K. Maezawa
- Organizer
  34th International Symposium on Compound Semiconductors (ISCS2007)
- Place of Presentation
  京都大学
- Year and Date
  2007-09-18
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Effect of In and Sb monolayers to form rotated InSb films on Si (111) substrate2007
- Author(s)
  M. Saito, M. Mori, K. Maezawa
- Organizer
  5th International Symposium on Control of Semic onductor Interfaces (ISCSI-5)
- Place of Presentation
  首都大学東京
- Year and Date
  2007-11-13
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Heteroepitaxial InSb films grown via Si (111)-√7x√3-In surface reconstruction2007
- Author(s)
  M. Mori, M. Saito, K. Nagashima, K. Ueda, Y. Yamashita, C. Tatsuyama, T. Tambo, K. Maezawa
- Organizer
  34th International Symposium on Compound Semiconductors (ISCS2007)
- Place of Presentation
  京都大学
- Year and Date
  2007-09-18
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] 共鳴トンネルダイオードを用いたサンプリング回路の作製と評価
- Author(s)
  中山大周、呉東坡、角谷祐一郎、潘杰、森雅之、前澤宏一
- Organizer
  電子情報通信学会ソサイエティ大会
- Place of Presentation
  徳島大学
- Year and Date
  2014-09-23 – 2014-09-26
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜の成長
- Author(s)
  斉藤光史、森雅之、上田広司、吉田達雄、新村康成、前澤宏一
- Organizer
  春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋キャンパス
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] 共鳴トンネル超再生検波回路における基本波を超える高周波信号の検波
- Author(s)
  前澤宏一、潘杰、角谷祐一郎、中山大周、森雅之
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  北海道大学
- Year and Date
  2015-02-05 – 2015-02-06
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] Ge(111)基板上InSb薄膜の作製
- Author(s)
  三枝孝彰、森雅之、前澤宏一
- Organizer
  2014年(平成26年)第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] THz帯域を目指した新構造可変位相シフタ
- Author(s)
  中野大輔、森雅之、前澤宏一、石井仁、安藤浩哉
- Organizer
  2015年電子情報通信学会総合大会
- Place of Presentation
  立命館大学びわこ・くさつキャンパス
- Year and Date
  2015-03-10 – 2015-03-13
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] Thermal Reliability of Transplanted Devices by Fluidic Self-Assembly Using Molten Ga Bumps
- Author(s)
  K. Maezawa, J. Nakano, T. Shibata, H. Morita, H. Sakamoto, M. Mori
- Organizer
  2014 Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2014)
- Place of Presentation
  Delphi, Greece
- Year and Date
  2014-06-18 – 2014-06-20
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] Experimental Demonstration of Resonant Tunneling Super Regenerative Detectors Detecting High Order Harmonic Signals on Si substrate
- Author(s)
  J. Pan, Y. Kakutani, T. Nakayama, M. Mori and K. Maezawa
- Organizer
  2014 International Conference on Solid State Devices and Materials　(SSDM 2014)
- Place of Presentation
  つくば
- Year and Date
  2014-09-08 – 2014-09-14
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] Ultra short pulse generators using a resonant tunneling diode transplanted on Si substrate
- Author(s)
  H. Sakamoto, S. Yamada, J. Nakano, H. Morita, M. Mori and K. Maezawa
- Organizer
  2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced　Semiconductor Devices (AWAD 2014)
- Place of Presentation
  金沢
- Year and Date
  2014-06-01 – 2014-06-03
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] Electrical Characterization of n+-InSb/p-Si Heterojunctions Grown by Surface Reconstruction Controlled Epitaxy
- Author(s)
  K. Kimura, K. Hosotani, T. Ito, H. Shimoyama, T. Sakamoto, M. Mori, and K. Maezawa
- Organizer
  2014 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2014)
- Place of Presentation
  Ryukoku University Avanti Kyoto Hall, Kyoto
- Year and Date
  2014-06-19 – 2014-06-20
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] Heteroepitaxial Growth of InSb thin films on a Ge(111) substrate
- Author(s)
  T. Mitsueda, T. Sakamoto, H. Shimoyama, M. Mori, and K. Maezawa
- Organizer
  2014 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2014)
- Place of Presentation
  Ryukoku University Avanti Kyoto Hall, Kyoto
- Year and Date
  2014-06-19 – 2014-06-20
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] RTD装荷微小カンチレバーを用いたΔΣ型歪みセンサーのための発振回路の検討
- Author(s)
  角谷祐一郎、中山大周、潘杰、森雅之、前澤宏一
- Organizer
  電子情報通信学会ソサイエティ大会
- Place of Presentation
  徳島大学
- Year and Date
  2014-09-23 – 2014-09-26
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] Si(111)基板上へのGaSbエピタキシャル成長と膜質の評価
- Author(s)
  下山裕哉、森雅之、前澤宏一
- Organizer
  2014年(平成26年)第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] V字型(111)面パターンを形成したSi(100)基板上へのInSb薄膜のヘテロエピタキシャル成長
- Author(s)
  岩杉達矢、森雅之、斉藤光史、五十嵐弘樹、村田和範、前澤宏一
- Organizer
  春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-19760233
[Presentation] Si(111)基板上へのInxGa1-xSbエピタキシャル成長と膜質の評価
- Author(s)
  下山裕哉、森雅之、前澤宏一
- Organizer
  第2回有機・無機エレクトロニクスシンポジウム
- Place of Presentation
  信州大学長野(工学)キャンパス
- Year and Date
  2014-07-11 – 2014-07-12
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] 溶融Gaバンプを用いたFluidic Self-Assemblyで配置された微小デバイスの熱的信頼性
- Author(s)
  中野純、柴田知明、森田弘樹、坂本宙、森雅之、前澤宏一
- Organizer
  電子情報通信学会ソサイエティ大会
- Place of Presentation
  徳島大学
- Year and Date
  2014-09-23 – 2014-09-26
- Invited
- Data Source
  KAKENHI-PROJECT-25249042
[Presentation] SOI(Silicon-on-Insulator)基板上へのInSbヘテロエピタキシャル成長
- Author(s)
  坂本大地、森雅之、前澤宏一
- Organizer
  2014年(平成26年)第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25289099
[Presentation] HEMTと空洞共振器を用いたデジタルマイクロフォンセンサ
- Author(s)
  藤野舜也、水野雄太、山岡昂博、森雅之、前澤宏一
- Organizer
  2014年電子情報通信学会ソサイエティ大会
- Place of Presentation
  徳島大学
- Year and Date
  2014-09-23 – 2014-09-26
- Data Source
  KAKENHI-PROJECT-26630154
[Presentation] InSb単分子層を介したV溝加工したSi(001)基板上へのInSb薄膜の成長
- Author(s)
  岩杉達矢、カマセ・サラ、角田梓、中谷公彦、森雅之、前澤宏一
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  北陸先端科学技術大学院大学
- Data Source
  KAKENHI-PROJECT-22560323

1. MAEZAWA Koichi (90301217)

# of Collaborated Projects: 5 results

# of Collaborated Products: 128 results
2. 石井仁 (20506175)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
3. 安藤浩哉 (30212674)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

Mori Masayuki 森 雅之

MORI Masayuki 森 雅之

Research Projects

Research Products

Co-Researchers

Si基板上へのInSb系超高速・超低消費電力デバイスの作製と評価Principal Investigator

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Study of InSb-related CMOS on Si substrate with surface reconstruction controled epitaxyPrincipal Investigator

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Frequency delta sigma modulation position snsors based on a reflected electromagnetic wave resonance

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Study of InSb-CMOS on Si subustrate by using surface reconstruction controlled epitaxyPrincipal Investigator

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Studies on THz sampling and signal generation technologies based on MEMS/resonant tunneling diode integration

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Fabrication of InSb-based high-speed and low power devices on Si by using surface reconstruction controlled epitaxyPrincipal Investigator

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Active Transmission Lines Loaded with Resonant Tunneling Diodes and Their Application to THz Signal Generation and Processing

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Fabrication of InSb quantum well on Si using surface reconstruction Assisted growth method and its application for ultra-fast FETPrincipal Investigator

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[Journal Article] Effect of flux ratio on GaSb films grown at a low temperature on Si(111)2019

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[Journal Article] An investigation of the crystalline nature for GaSb films on Si(111) at varied growthtemperature and growth rate2019

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[Journal Article] Experimental demonstration of strain detection using resonant tunneling delta-sigma modulation sensors2017

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[Journal Article] Heteroepitaxial growth of InGaSb on GaSb/Si(111)-√3x√3-Ga surface phase with two step growth method to investigate the impact of high-quality GaSb buffer layer2016

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[Journal Article] Resonant Tunneling Super Regenerative Detectors Detecting Higher Frequency Signals than Their Free-Running Oscillation Frequency2015

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Mori Masayuki 森雅之

MORI Masayuki 森雅之