HATAYAMA Tomoaki 畑山智亮

Researcher Number	90304162
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2007 – 2014: Nara Institute of Science and Technology, Graduate School of Materials Science, Assistant Professor 2003 – 2006: 奈良先端科学技術大学院大学, 物質創成科学研究科, 助手
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Electron device/Electronic equipment / Applied materials science/Crystal engineering / Science and Engineering
Keywords	Principal Investigator 半導体 / シリコンカーバイド / 転位 / 炭化ケイ素 / electron beam induced current / crystal growth / dislocation / silicon carbide / 電子線起電流 / 結晶成長 / 結晶工学 / 炭化珪素 / エッチング … More Except Principal Investigator … More バイオミネラリゼーション / フェリチンタンパク / バイオナノプロセス / ボトムアップ / ディスプレイ / 自己組織化 / bio-mineralization / self assemble / bottom-up / Bio-nano process / 薄膜トランジスタ / 量子ドット / 結晶化 / シリコン薄膜 / Ni catalyst / Nano Particle / System On Panel / Display / Metal Induced Crystalization / Poly silicon film / Thin Film Transistor / Ferritin Protein / シリサイド / 固相成長 / ニッケル / Ni触媒 / ナノ粒子 / システムオンパネル / 金属誘起結晶化法 / 多結晶シリコン薄膜 / floating gate transistor / Quntum dot / フローティグゲートトランジスタ / フローティングゲートトランジスタ / plasma treatment / ferritin protein / バイオナノ / プラズマ / バイオメネラリゼーション / 積層シリコン薄膜 / ファイバー / 多結晶 / 三次元素子 / グリーンレーザ / フォトダイオード / 非二次元基板 / 多結晶シリコン / 三次元デバイス / 薄膜フォトダイオード / レーザ結晶化 / トンネル現象 / 電子デバイス・集積回路 / コバルト / MOSデバイス / 走査型トンネル顕微鏡 / ケルビンプローブ顕微鏡 / 走査型プローブ顕微鏡 / クーロンブロケード / 単電子 / MOSトランジスタ / 配置制御 / ナノドット / 不揮発 / フェリチン / 自己組織化材料 / バイオテクノロジー / 微細加工 / 半導体 / 低温結晶化 / 抵抗変化型メモリ / タンパク / メモリ / 半導体デバイス / 生体超分子 Less

電力変換損失の低減へ向けた特異な結晶面による炭化ケイ素デバイスPrincipal Investigator
- Principal Investigator
  
  畑山智亮
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nara Institute of Science and Technology
二次元核発生頻度の制御による双晶が無い立方晶の炭化ケイ素成長Principal Investigator
- Principal Investigator
  
  畑山智亮
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nara Institute of Science and Technology
Laser Crystallization of non two-dimensional Si substrates and their device application
- Principal Investigator
  
  URAOKA Yukiharu
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nara Institute of Science and Technology
Research of dislocation-free silicon-carbide growthPrincipal Investigator
- Principal Investigator
  
  HATAYAMA Tomoaki
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nara Institute of Science and Technology
Nano structure fabrication by Self-assembling ability
- Principal Investigator
  
  YUKIHARU Uraoka (URAOKA Yukiharu)
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nara Institute of Science and Technology
Random Tunneling Conduction in 2 Dimensional Bio-nano Dot Arrays and Application to Stochastic Resonant Tunneling Devices
- Principal Investigator
  
  FUYUKI Takashi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nara Institute of Science and Technology
Surface Modification and High-Resolution Nondistractive Analysis toward Dislocation-free SiC GrowthPrincipal Investigator
- Principal Investigator
  
  HATAYAMA Tomoaki
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nara Institute of Science and Technology
Research of Bio-nano Display using Ferritin Protein
- Principal Investigator
  
  URAOKA Yukiharu
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nara Institute of Science and Technology
Two dimensional crystallization of ferritin protein for nano-scale process in semiconductor fabrication
- Principal Investigator
  
  URAOKA Yukiharu
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nara Institute of Science and Technology
Self assembly of quantum dot and application to electron device using bio-nano process
- Principal Investigator
  
  FUYUKI Takashi
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nara Institute of Science and Technology

All 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 Other

All Journal Article Presentation

[Journal Article] Comparison of etch pit shapes on off-oriented 4H-SiC using different halogen gases2013
- Author(s)
  T. Hatayama, T. Tamura, H. Yano and T. Fuyuki
- Journal Title
  
  Materials Science Forum
  
  Volume: 740-742 Pages: 589-592
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560367
[Journal Article] Single etch-pit shape on off-angled 4H-SiC(0001) Si-face formed by chlorine trifluoride2012
- Author(s)
  T. Hatayama, T. Tamura, H. Yano, and T. Fuyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51
- NAID
  210000072509
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560367
[Journal Article] 塩素系ガスによるSiCのプラズマレス・エッチング2012
- Author(s)
  畑山智亮、堀良太、田村哲也、矢野裕司、冬木隆
- Journal Title
  
  信学技報
  
  Volume: 116 Pages: 7-12
- Data Source
  KAKENHI-PROJECT-23560367
[Journal Article] Shape control of trenched 4H-SiC C face by thermal chlorine etching2012
- Author(s)
  H. Koketsu, T.Hatayama, H. Yano, and T. Fuyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 5R Pages: 051201-051201
- DOI
  10.1143/jjap.51.051201
- NAID
  40019280119
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560367
[Journal Article] Control of inclined sidewall angles of 4H-SiC mesa and trench structures2011
- Author(s)
  H.Koketsu, T.Hatayama
- Journal Title
  
  Materials Science Forum
  
  Volume: 679 Pages: 485-488
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560301
[Journal Article] Control of inclined sidewall angles of 4H-SiC mesa and trench structures2011
- Author(s)
  H.Koketsu, T.Hatayama, 他3名
- Journal Title
  
  Mat.Sci.Forum 679巻
  
  Pages: 485-488
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560301
[Journal Article] Hexagonality and stacking sequence dependence of etching properties in Cl_2-O_2-SiC system2010
- Author(s)
  T.Hatayama
- Journal Title
  
  Materials Science Forum 645(in press)
  
  Pages: 771-774
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560301
[Journal Article] Self-formation of specific pyramidal planes in 4H-SiC formed by chlorine based ambience2010
- Author(s)
  H.Koketsu, T.Hatayama
- Journal Title
  
  Materials Science Forum 645(in press)
  
  Pages: 775-777
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560301
[Journal Article] Hexagonality and stacking sequence dependence of etching properties in Cl_2-O_2-SiC system2010
- Author(s)
  T.Hatayama, 他3名
- Journal Title
  
  Mat.Sci.Forum 645巻
  
  Pages: 771-774
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560301
[Journal Article] Comprehensive study of electroluminescence in multicrystalline silicon solar cells2009
- Author(s)
  A.Kitiyanan, A.Ogane, A.Tani, T.Hatayama, H.Yano, Y.Uraoka, T.Fuyuki
- Journal Title
  
  J.Appl.Phys 106
  
  Pages: 43717-43717
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Thermal Etching of 4H-SiC(0001) Si Faces in the Mixed Gas of Chlorine and Oxygen2009
- Author(s)
  T.Hatayama, T.Shimizu, 他4名
- Journal Title
  
  Jpn.J.Appl.Phys. 48巻
- NAID
  40016627223
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560301
[Journal Article]2009
- Author(s)
  A. Kitiyanan, A. Ogane, A. Tani, T. Hatayama, H. Yano, Y. Uraoka, T. Fuyuki
- Journal Title
  
  J. Appl. Phys. 106
  
  Pages: 43717-43717
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Thermal Etching of 4H-SiC(0001) Si Faces in the Mixed G as of Chlorine and Oxygen2009
- Author(s)
  T. Hatayama
- Journal Title
  
  Japanese Journal of Applied Phys ics in press
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560301
[Journal Article] Anisotropic etching of SiC in the mixed gas of chlorine and oxygen2009
- Author(s)
  T. Hatayama
- Journal Title
  
  Materials Science Forum 600-603
  
  Pages: 659-662
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560301
[Journal Article] Anisotropic etching of SiC in the mixed gas of chlorine and oxygen2009
- Author(s)
  T.Hatayama, 他3名
- Journal Title
  
  Mat.Sci.Forum 600巻
  
  Pages: 659-662
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560301
[Journal Article] Thermal Etching of 4H-SiC(0001) Si Faces in the Mixed Gas of Chlorine and Oxygen2009
- Author(s)
  T.Hatayama
- Journal Title
  
  Japanese Journal of Applied Physics 48
- NAID
  40016627223
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560301
[Journal Article] Analysis of Anomalous Charge-Pumping Characteristics on 4H-SiC MOSFETs2008
- Author(s)
  D. Okamoto, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki
- Journal Title
  
  IEEE Transaction Electron Device Vol.55,No.8
  
  Pages: 2013-2020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article]2008
- Author(s)
  M. Fujii, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, J. Sim Jung
- Journal Title
  
  J. Yeon Kwon, Jpn. J. Appl. Phys. Vol.47,No.8
  
  Pages: 6236-6240
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen2008
- Author(s)
  Tomoaki Hatayama
- Journal Title
  
  Materials Science Forum (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560305
[Journal Article] Thermal analysis of degradation in Ga_2O_3-In_2O_3-ZnO thin film transistors2008
- Author(s)
  M.Fujii, H.Yano, T.Hatayama, Y.Uraoka, T.Fuyuki, J.Sim Jung, J.Yeon Kwon
- Journal Title
  
  Japanese Journal of Applied Physics Vol.47
  
  Pages: 6236-6240
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20246006
[Journal Article] Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System2007
- Author(s)
  Tomoaki Hatayama
- Journal Title
  
  Materials Science Forum (in press)
- Data Source
  KAKENHI-PROJECT-18560305
[Journal Article] Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System2007
- Author(s)
  T. Hatayama, S. Takenami, H. Yano, Y. Uraoka, T. Fuyuki
- Journal Title
  
  Mat. Sci. Forum Vols. 556-557
  
  Pages: 283-286
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560305
[Journal Article] Fabrication of Poly-Si Thin-Film Transistors on Quartz Fiber2007
- Author(s)
  Yuta Sugawara, Yukiharu Uraoka, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki
- Journal Title
  
  Aplied Physics Ltter 91
  
  Pages: 203518-203518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Low temperature poly-Si Thin Film Transistors flash memory with Si nanocrystal dot2007
- Author(s)
  Kazunori Ichikawa, Yukiharu Uraoka, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki, Eiji Takahashi, Tsukasa Hayashi, Kiyoshi Ogata
- Journal Title
  
  Jpn. J. Appl. Phys. Lett. Vol.46,No.27
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Low-temperature poly-Si TFT flash memory w ith ferritin2007
- Author(s)
  Kazunori Ichikawa, Yukiharu Uraoka, Prakaipetch, Punchaipetch, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki, Ichiro Yamashita
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.46,No.34
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing2007
- Author(s)
  Yuta Sugawara, Yukiharu Uraoka, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki, A, Mimura
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 46,No. 8
- NAID
  10018902932
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System2007
- Author(s)
  T. Hatayama, et. al.
- Journal Title
  
  Materials Science Forum 556-557
  
  Pages: 283-286
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560305
[Journal Article] Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl_2-O_2 Thermal Etching2007
- Author(s)
  S. Takenami, T. Hatayama, H. Yano, Y. Uraoka, T. Fuyuki
- Journal Title
  
  Mat. Sci. Forum Vols. 556-557
  
  Pages: 733-736
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560305
[Journal Article] Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing for High Performance Thin Film Transistors2007
- Author(s)
  Yuta Sugawara, Yukiharu Uraoka, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki, Akio Mimura
- Journal Title
  
  IEEE EDL Vol.28,No.5
  
  Pages: 395-395
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Reliability of low temperature poly-Si Thin Film Transistors with ultrathin gate oxide2007
- Author(s)
  Hitoshi Ueno, Yuta Sugawara, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Tadashi Serikawa
- Journal Title
  
  pn. J. Appl. Phys. Vol.46,No.7A
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Low Temperature Poly-Si TFT Flash Memory with Si Nano crystal Dot2007
- Author(s)
  K.Ichikawa, H.Yano, T.Hatayama, Y.Uraoka, T.Fuyuki
- Journal Title
  
  The proceeding of the 3^<rd> International TFT Conference
  
  Pages: 340-340
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Reliability Analysis of Ultra-Low-Temperature Poly-Si Thin Film Transistors2007
- Author(s)
  Hitoshi Ueno, Yuta Sugawara, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 46,No. 3B
  
  Pages: 1303-1303
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System2007
- Author(s)
  Tomoaki Hatayama
- Journal Title
  
  Materials Science Forum 556-557
  
  Pages: 283-286
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560305
[Journal Article] Low-temperature poly-Si TFT flash memory with ferritin2007
- Author(s)
  Kazunori Ichikawa, Yukiharu Uraoka, Prakaipetch, Punchaipetch, H.iroshi Yano, Tomoaki Hatayama, Takashi Fuyuki, Ichiro Yamashita
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 1804-806
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] Fabrication of Poly-Si Thin-Film Transistors on Quartz Fiber2007
- Author(s)
  Yuta Sugawara, Yukiharu Uraoka^*, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki
- Journal Title
  
  Applied Physics Letters 91
  
  Pages: 203518-13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063015
[Journal Article] 3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method2006
- Author(s)
  Y. Yanagisawa, T. Hatayama, H. Yano, Y. Uraoka, T. Fuyuki
- Journal Title
  
  Mat. Sci. Forum Vols. 527-529
  
  Pages: 423-426
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560305
[Journal Article] High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH_3SiH_3 and C_3H_8 Sources2006
- Author(s)
  T. Hatayama, et. al.
- Journal Title
  
  Materials Science Forum 527-529
  
  Pages: 203-206
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560305
[Journal Article] Analysis of Minority Carrier Diffusion Length in SiC toward High Quality Epitaxial Growth2006
- Author(s)
  T. Hatayama, et. al.
- Journal Title
  
  Journal of Microelectronic Engineering 83
  
  Pages: 30-33
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560305
[Journal Article] Evaluation of Crystallinity in 4H-SiC {0001} Epilayers Thermally Etched by Chlorine and Oxygen System2006
- Author(s)
  Tomoaki Hatayama
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10017653486
- Data Source
  KAKENHI-PROJECT-18560305
[Journal Article] High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH_3SiH_3 and C_3H_8 Sources2006
- Author(s)
  T. Hatayama, H. Yano, Y. Uraoka, T. Fuyuki
- Journal Title
  
  Mat. Sci. Forum Vols. 527-529
  
  Pages: 203-206
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560305
[Journal Article] Evaluation of Crystallinity in 4H-SiC{0001} Epilayers Thermally Etched by Chlorine and Oxygen System2006
- Author(s)
  T. Hatayama, H. Yano, Y. Uraoka, T. Fuyuki
- Journal Title
  
  Jpn. J. Appl. Phys Vol. 45
- NAID
  10017653486
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560305
[Journal Article] Analysis of Minority Carrier Diffusion Length in SiC toward High Quality Epitaxial Growth2006
- Author(s)
  T. Hatayama, H. Yano, Y. Uraoka, Takashi, Fuyuki
- Journal Title
  
  J. Microelect. Eng Vol. 83
  
  Pages: 30-33
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560305
[Journal Article] Evaluation of Crystallinity in 4H-SiC {0001} Epilayers Thermally Etched by Chlorine and Oxygen System2006
- Author(s)
  T. Hatayama, et. al.
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10017653486
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560305
[Journal Article] Electron Injection into Si nanodot by side-wall type plasma enhanced chemical vapor deposition2005
- Author(s)
  K.Ichikawa, P.Punchaipetch, H.Yano, T.Hatayama, Y.Uraoka, T.Fuyuki
- Journal Title
  
  2005 International Meeting for Future of Electron Device, Kansai P-D7
  
  Pages: 97-97
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360013
[Journal Article] シリコンナノクリスタルドット形成プロセスの低温化2005
- Author(s)
  向正人, 市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第50回応用物理学関係連合講演会 1a-P6-17
  
  Pages: 988-988
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] シリコンナノクリスタルドット形成プロセスの低温化2005
- Author(s)
  向正人, 市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第50回応用物理学関係連合講演会 1a-p6-17(未定)
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Electron Injection into Si nano dot fabricated by side-wall type plasma enhanced chemical vapor deposition2005
- Author(s)
  市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  International Meeting of Future Electron Device in Kansai P-D7
  
  Pages: 97-97
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Siナノドットメモリにおけるート酸化膜厚依存性2005
- Author(s)
  P.Punchaipetch, 市川和典, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第50回応用物理学関係連合講演会 1a-P6-19
  
  Pages: 988-988
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Electron Injection into Si nano dot fabricated by Side-wall type plasma enhanced chemical vapor deposition2005
- Author(s)
  Kazunori Ichikawa, Masato Mukai, P.Punchaipetch, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Eiji Takahashi, Tsukasa Hayashi, Kiyoshi Ogata
- Journal Title
  
  IEEE/International Meeting for Future Electron Devices, Kansai P-D7
  
  Pages: 97-97
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Siナノドットメモリにおける-ト酸化膜厚依存性2005
- Author(s)
  p.punchaipetch, 市川和典, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第50回応用物理学関係連合講演会 1a-p6-18(未定)
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] 積層型Siナノドットフローティングゲートメモリにおける充放電特性評価2005
- Author(s)
  市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第50回応用物理学関係連合講演会 1a-P6-19
  
  Pages: 988-988
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] 積層型Siナノドットフローティングゲートメモリにおける充放電特性評価2005
- Author(s)
  市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第50回応用物理学関係連合講演会 1a-p6-19(未定)
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Electron Injection into Si nano dot fabricated by side-wall type plasma enhanced chemical vapor deposition2005
- Author(s)
  市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  International Meeting of Future Electron Device in Kansai (未定)
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Electron Injection into Si nano dot fabricated by Side-wall type plasma enhanced chemical vapor deposition2005
- Author(s)
  Kazunori Ichikawa, Masato Mukai, P.Punchaipetch, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Eiji Takahashi, Tsukasa Hayashi, Kiyoshi Ogata
- Journal Title
  
  IEEE/International Meeting for Future Electron Devices, Kansai P-D7
  
  Pages: 97-97
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360013
[Journal Article] Si nano-crystal dot memory fabricated by Side-wall Typed PECVD2004
- Author(s)
  Kazunori Ichikawa, Masato Mukai, P.Punchaipetch, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Eiji Takahashi, Tsukasa Hayashi, Kiyoshi Ogata
- Journal Title
  
  Technical Report of IEICE SDM2004-206
- NAID
  110003311202
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Si-Wall電極型PECVDによるSiナノドットにおける充放電特性評価2004
- Author(s)
  市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第65回応用物理学関係連合講演会 1a-L-lO
  
  Pages: 754-754
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] Side-Wall電極型PECVDによるSiナノドットメモリ2004
- Author(s)
  市川和典, 向正人, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆
- Journal Title
  
  電子情報通信学会信学技報 SDM2004-206
  
  Pages: 81-81
- NAID
  110003311202
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360013
[Journal Article] Side-Wall電極型PECVDによるSiナノドットメモリ2004
- Author(s)
  市川和典, 向正人, p.punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆
- Journal Title
  
  電子情報通信学会信学技報 SDM2004-206
  
  Pages: 81-81
- NAID
  110003311202
- Data Source
  KAKENHI-PROJECT-15360013
[Journal Article] Si-Wall電極型PECVDによるSiナノドットにおける充放電特性評価2004
- Author(s)
  市川和典, P.Punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第65回応用物理学関係連合講演会 1a-L-10
  
  Pages: 754-754
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] リモートプラズマ法によるPLCVDHfSiO膜への窒素プロファイルの制御2004
- Author(s)
  P.Punchaipetch, 中村秀碁, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 堀井貞義
- Journal Title
  
  第65回応用物理学関係連合講演会 1p_C-7
  
  Pages: 679-679
- Data Source
  KAKENHI-PROJECT-15360013
[Journal Article] Si nano-crystal dot memory fabricated by Side-wall Typed PECVD2004
- Author(s)
  Kazunori Ichikawa, Masato Mukai, P.Punchaipetch, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Eiji Takahashi, Tsukasa Hayashi, Kiyoshi Ogata
- Journal Title
  
  Technical Report of IEICE SDM2004-206
- NAID
  110003311202
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360013
[Journal Article] シリコン窒化膜に埋め込まれたSiナノドットへの電子注入2004
- Author(s)
  P.Punchaipetch, 市川和典, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第65回応用物理学関係連合講演会 1a-L-10
  
  Pages: 754-754
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] シリコン窒化膜に埋め込まれたSiナノドットへの電子注入2004
- Author(s)
  P.Punchaipetch, 市川和典, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 高橋英治, 林司
- Journal Title
  
  第65回応用物理学関係連合講演会 1a-L-11
  
  Pages: 754-754
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360191
[Journal Article] 窒素励起活性種を用いたPLD-HfSixOy膜への窒素導入2004
- Author(s)
  中村秀碁, p.punchaipetch, 矢野裕司, 畑山智亮, 浦岡行治, 冬木隆, 堀井貞義
- Journal Title
  
  電子情報通信学会信学技報 SDM2004-45
  
  Pages: 57-57
- Data Source
  KAKENHI-PROJECT-15360013
[Journal Article] プラズマ援用化学気相堆積法を用いて堆積したSiナノドットへの電子注入2004
- Author(s)
  市川和典, 猪飼順子, 彦野太樹夫, 矢野裕司, 畑山智亮, 冬木隆, 林司
- Journal Title
  
  第51回応用物理学会関係連合講演会 28p-ZH-2
  
  Pages: 959-959
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360013
[Presentation] 光学的および回折法によるSiC結晶多形の解析2013
- Author(s)
  畑山智亮、矢野裕司、冬木隆
- Organizer
  SiC及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館、埼玉県さいたま市
- Data Source
  KAKENHI-PROJECT-23560367
[Presentation] 熱エッチング速度のSiC結晶面方位依存性2011
- Author(s)
  田村哲也、畑山智亮、纐纈英典、矢野裕司、冬木隆
- Organizer
  第20回SiC及び関連ワイドギャップ半導体研究会
- Place of Presentation
  愛知県産業労働センター
- Data Source
  KAKENHI-PROJECT-23560367
[Presentation] 塩素ガス熱エッチングにおける結晶面異方性を活用したSiCトレンチ底部の形状制御2011
- Author(s)
  纐纈英典, 畑山智亮, 他3名
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] Surface treatments of 4H-SiC evaluated by contact angle measurement2010
- Author(s)
  畑山智亮, 他4名
- Organizer
  European Conference of Silicon Carbide and Related Materials
- Place of Presentation
  Norway
- Year and Date
  2010-09-01
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] SiCにおけるエッチピット形状オフ角度およびポリタイプ依存性2010
- Author(s)
  畑山
- Organizer
  シリコンカーバイド及び関連ワイドギャップ半導体研究会第19回講演会
- Place of Presentation
  つくば国際会議場
- Year and Date
  2010-10-21
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] 熱エッチングによるマイクロメータサイズのSiC円錐状構造の自己形成2010
- Author(s)
  網嶋、畑山
- Organizer
  シリコンカーバイド及び関連ワイドギャップ半導体研究会第19回講演会
- Place of Presentation
  つくば国際会議場
- Year and Date
  2010-10-21
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] 塩素ガス熱エッチングによる4H-SiCサブトレンチの解消2010
- Author(s)
  纐纈英典, 畑山智亮, 他3名
- Organizer
  シリコンカーバイド及び関連ワイドギャップ半導体研究会第19回講演会
- Place of Presentation
  茨城県
- Year and Date
  2010-10-21
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] 熱エッチングによるマイクロメータサイズのSiC円錐状構造の自己形成2010
- Author(s)
  網嶋健人, 畑山智亮, 他3名
- Organizer
  シリコンカーバイド及び関連ワイドギャップ半導体研究会第19回講演会
- Place of Presentation
  茨城県
- Year and Date
  2010-10-21
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] 塩素ガス熱エッチングによる4H-SiCサブトレンチの解消2010
- Author(s)
  纐纈、畑山
- Organizer
  シリコンカーバイド及び関連ワイドギャップ半導体研究会第19回講演会
- Place of Presentation
  つくば国際会議場
- Year and Date
  2010-10-21
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] SiCにおけるエッチピット形状オフ角度およびポリタイプ依存性2010
- Author(s)
  畑山智亮, 纐纈英典, 矢野裕司, 冬木隆
- Organizer
  シリコンカーバイド及び関連ワイドギャップ半導体研究会第19回講演会
- Place of Presentation
  茨城県
- Year and Date
  2010-10-21
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] 熱エッチングで形成した4H-SiCメサ構造のオフ角度と方位依存性2009
- Author(s)
  纐纈英典, 畑山智亮, 他3名
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] Hexagonality and stacking sequence dependence of etching properties in Cl_2-O_2-SiC system2009
- Author(s)
  畑山智亮, 他3名
- Organizer
  International Conference of Silicon Carbide and Related Materials
- Place of Presentation
  Germany
- Year and Date
  2009-10-14
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] 塩素ガスでの熱エッチングによる4H-SiC{11-2-m}および{1-10-n}面の形成2009
- Author(s)
  纐纈英典, 畑山智亮, 他2名
- Organizer
  シリコンカーバイド及び関連ワイドギャップ半導体研究会第18回講演会
- Place of Presentation
  神戸市
- Year and Date
  2009-12-17
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] Pulsed Green Laser Anneling Crystallization of Double-Layered Silicon Thin Films2009
- Author(s)
  Y. Sugawara, H. Yano, T, Hatayama, Y. Uraoka, T. Fuyuki
- Organizer
  The 5^<th> International TFT Conference
- Place of Presentation
  Paris, France
- Year and Date
  2009-05-03
- Data Source
  KAKENHI-PROJECT-20246006
[Presentation] Improvement of interface properties by NH3 pretreatment for 4H-SiC(000-1) MOS structure2009
- Author(s)
  Y.Iwasaki, H.Yano, T.Hatayama, Y.Uraoka, T.Fuyuki
- Organizer
  Solid State Device Meeting
- Place of Presentation
  Sendai
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Hexagonality and stacking sequence dependence of etching properties in Cl_2-O_2-SiC system2009
- Author(s)
  T Hatayama
- Organizer
  International Conference of Silicon Carbide and Related Materials
- Place of Presentation
  国際会議場(Nurnberg, Germany)
- Year and Date
  2009-10-14
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] 4H-SiC (000-1)C面の熱エッチング特性2009
- Author(s)
  網嶋、畑山
- Organizer
  シリコンカーバイド及び関連ワイドギャップ半導体研究会第18回講演会
- Place of Presentation
  神戸国際会議場(兵庫県)
- Year and Date
  2009-12-17
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] 塩素ガスでの熱エッチングによる4H-Sic {11-2-m}および{1-10-n}面の形成2009
- Author(s)
  網嶋、畑山
- Organizer
  シリコンカーバイド及び関連ワイドギャップ半導体研究会第18回講演会
- Place of Presentation
  神戸国際会議場(兵庫県)
- Year and Date
  2009-12-17
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] Self-formation of specific pyramidal planes in 4H-SiC formed by chlorine based ambience2009
- Author(s)
  H.Koketsu, T.Hatayama
- Organizer
  International Conference of Silicon Carbide and Related Materials
- Place of Presentation
  国際会議場(Nurnberg, Germany)
- Year and Date
  2009-10-14
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] 4H-SiC (000-1)C面の熱エッチング特性2009
- Author(s)
  網嶋健人, 畑山智亮, 他3名
- Organizer
  シリコンカーバイド及び関連ワイドギャップ半導体研究会第18回講演会
- Place of Presentation
  神戸市
- Year and Date
  2009-12-17
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] Pulsed Green Laser Anneling Crystallization of Double-Layered Silicon Thin Films2009
- Author(s)
  Y. Sugawara, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki
- Organizer
  5th International TFT Conference
- Place of Presentation
  Paris France
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Self-formation of specific pyramidal planes in 4H-SiC formed by chlorine based ambience2009
- Author(s)
  H.Koketsu T.Hatayama, 他3名
- Organizer
  International Conference of Silicon Carbide and Related Materials
- Place of Presentation
  Germany
- Year and Date
  2009-10-14
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] 塩素ガスを使った熱エッチングにおける4H-SiCメサ側壁傾斜角度の制御2009
- Author(s)
  纐纈英典, 畑山智亮, 他2名
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] Interface Properties of C-face 4H-SiC Metal-Oxide-Semiconductor Structures Prepared by Direct Oxidation in Nitric Oxide2009
- Author(s)
  D.Okamoto, H.Yano, Y.Oshiro, T.Hatayama, Y.Uraoka, T.Fuvuki
- Organizer
  Solid State Device Meeting
- Place of Presentation
  Sendai
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation]2009
- Author(s)
  Y. Iwasaki, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki
- Organizer
  SSDM
- Place of Presentation
  Sendai
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Acceleration of Crystal Growth by Pulse Rapid Anneaking using Ni ferritin2008
- Author(s)
  M. Ochi, Y. Sugawara, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, I. Yamashita
- Organizer
  The 4th International TFT Conference
- Place of Presentation
  Seoul Korea
- Year and Date
  2008-01-25
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation]2008
- Author(s)
  Mami Fujii, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Ji Sim Jung, Jang Yeon Kwon, Takashi Nakanishi, Mutsumi Kimura
- Organizer
  IMFEDK
- Place of Presentation
  Osaka
- Year and Date
  2008-05-23
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] 熱エッチングによる4H-SiC高指数面の形成とショットキーバリアダイオードへの応用2008
- Author(s)
  纐纈英典, 畑山智亮, 他2名
- Organizer
  シリコンカーバイド及び関連ワイドギャップ半導体研究会第17回講演会
- Place of Presentation
  東京都
- Year and Date
  2008-12-08
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] Improvement in Al2O3/Si Interfacial Characteristics by High Pressure Water Annealing2008
- Author(s)
  H. Itoh, Y, Sugawara, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki
- Organizer
  The 4th International TFT Conference
- Place of Presentation
  Seoul Korea
- Year and Date
  2008-01-25
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Threshold Voltage Shift in Ga2O3-In2O3-ZnO(ZIGO) Thin Film Transitors under Constant Voltage Stress2008
- Author(s)
  M. Fujii, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, J. Jung, J. Kwon, T. Nakanishi, M. Kimura
- Organizer
  SSDM
- Place of Presentation
  Tsukuba
- Year and Date
  2008-09-08
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Low temperature poly-Si TFT flash memory with Ferritin Protein2008
- Author(s)
  K. Ichikawa, P. Punchaipetch, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, I. Yamashita, T. Yaegashi, S. Kawabata, M. Yoshimau
- Organizer
  AMFPD
- Place of Presentation
  Tokyo(招待講演)
- Year and Date
  2008-07-02
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Characterization of 4H-SiC analyzed by cathodeluminescence and electron-beam induced current methods2008
- Author(s)
  畑山智亮, 他3名
- Organizer
  European conference of silicon carbide and related materials
- Place of Presentation
  Spain
- Year and Date
  2008-09-07
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] Green Laser Anneling Double-Layered X'tallization for System on Panerl2008
- Author(s)
  Y. Sugawara, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, A, Mimura
- Organizer
  The 4th International TFT Conference
- Place of Presentation
  Seoul Korea
- Year and Date
  2008-01-25
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] New Synthesis Method using Microwave Thermo Catalysis for Inorganic EL Displays2008
- Author(s)
  Mami Fujii, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Nobuyoshi Taguchi, R. Sugie, N. Muraki
- Organizer
  AMFPD
- Place of Presentation
  Tokyo
- Year and Date
  2008-07-02
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Pulsed Green Laser Anneling Crystallization of Double-Layered Silicon Thin Films2008
- Author(s)
  Y.Sugawara, H.Yano, T.Hatayama, Y.Uraoka, T.Fuyuki
- Organizer
  The 5^<th> International TFT Conference
- Place of Presentation
  Paris, France
- Year and Date
  2008-03-05
- Data Source
  KAKENHI-PROJECT-20246006
[Presentation] Characterization of 4H-SiC Analyzed by Cathodeluminescenee and Electron-Beam Induced Current Methods2008
- Author(s)
  T. Hatayama
- Organizer
  European Conference of Si 1 icon Carb ideand Related Materials
- Place of Presentation
  Axa Audi torium ( Bacelona, SPAIN )
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] 接触角度の測定と素子特性によるSiC表面処理の評価2008
- Author(s)
  鈴木啓之, 畑山智亮, 他4名
- Organizer
  シリコンカーバイド及び関連ワイドギャップ半導体研究会第17回講演会
- Place of Presentation
  東京都
- Year and Date
  2008-12-08
- Data Source
  KAKENHI-PROJECT-20560301
[Presentation] Degradation in Ga2O3-In2O3-ZnO Thin Film Transistors under Constant Voltage Stress2008
- Author(s)
  M. Fujii, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, J. Jung, J. Kwon, T. Nakanishi, M. Kimura
- Organizer
  AMFPD
- Place of Presentation
  Tokyo
- Year and Date
  2008-07-02
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] 熱エッチングを用いた異なるポリタイプにおけるSiC(0001)面エッチピットの解析2007
- Author(s)
  畑山智亮, 他
- Organizer
  秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学(北海道)
- Year and Date
  2007-09-04
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560305
[Presentation] Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen2007
- Author(s)
  T. Hatayama, et. al.
- Organizer
  International Conference of Silicon Carbide and Related Materials
- Place of Presentation
  Otsu prince hotel(滋賀県)
- Year and Date
  2007-10-15
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560305
[Presentation] Low Temperature poly-Si TFT Flash memory with Si nano crystal dot2007
- Author(s)
  K. Ichikawa, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki
- Organizer
  The proceeding of the 3rd International TFT Conference
- Place of Presentation
  Rome
- Year and Date
  2007-01-25
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] micro-PCD Measurement of Double-Layered poly-Si Thin Films Crystallization by Solid Green Lazer Annealing2007
- Author(s)
  Y. Sugawara, Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki
- Organizer
  The proceeding of the 3rd International TFT Conference
- Place of Presentation
  Rome
- Year and Date
  2007-01-25
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Crystallization of Double-Layerd silicon Thin Film by Solid Green Laser Annealing for High Performance Thin Film Transistor2007
- Author(s)
  Y. Sugawara, Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki, A, Mimura
- Organizer
  AMFPD '07
- Place of Presentation
  Hyogo
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] Low Temperature poly-Si TFT Flash memory with Si nano crystal dot2007
- Author(s)
  K.Ichikawa, H.Yano, T.Hatayama, Y.Uraoka(他1名、4番目)
- Organizer
  The proceeding of the 3rd International TFT Conference
- Data Source
  KAKENHI-PROJECT-18063015
[Presentation] 塩素と酸素の混合ガス雰囲気によるSiCの熱エッチング2007
- Author(s)
  畑山智亮, 他
- Organizer
  第17回SiC及び関連ワイドバンドギャップ半導体研究会
- Place of Presentation
  ウィルあいち(愛知県名古屋市)
- Year and Date
  2007-11-29
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560305
[Presentation] Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen2007
- Author(s)
  T. Hatayama, T. Shimizu, H. Yano, Y. Uraoka, T. Fuyuki
- Organizer
  International Conference of Silicon Carbide and Related Materials
- Place of Presentation
  Ohtsu, Japan
- Year and Date
  2007-10-15
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560305
[Presentation] Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System2006
- Author(s)
  T. Hatayama, et. al.
- Organizer
  European Conference of Silicon Carbide and Related Materials
- Place of Presentation
  Newcastle upon Tyne, UK
- Year and Date
  2006-09-06
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560305
[Presentation] Non-destructive analyses of crystal defects in SiC by planar electron-beam-induced current method2006
- Author(s)
  T. Hatayama, H. Yano, Y. Uraoka, T. Fuyuki
- Organizer
  GIST/NAIST Joint Symposium on Advanced Materials
- Place of Presentation
  Nara Institute of Science and Technology (Nara, Japan)
- Year and Date
  2006-11-21
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560305
[Presentation] 塩素と酸素による4H-SiCの熱エッチング2006
- Author(s)
  畑山智亮, 他
- Organizer
  秋季第67回応用物理学会学術講演会
- Place of Presentation
  立命館大学(滋賀県)
- Year and Date
  2006-08-30
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560305
[Presentation] Non-destructive analyses of crystal defects in SiC by planar electron-beam-induced current method2006
- Author(s)
  T. Hatayama, et. al.
- Organizer
  GIST/NAIST Joint Symposium on Advanced Materials
- Place of Presentation
  奈良先端科学技術大学院大学(奈良県)
- Year and Date
  2006-11-21
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560305
[Presentation] 塩素と酸素の熱エッチングを使ったSiC結晶性評価と素子プロセスへの応用2006
- Author(s)
  畑山智亮, 他
- Organizer
  第16回SiC及び関連ワイドバンドギャップ半導体研究会
- Place of Presentation
  高崎シティーギャラリ(群馬県)
- Year and Date
  2006-11-09
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560305
[Presentation] 塩素系ガスによるSiCのプラズマレス・エッチング
- Author(s)
  畑山智亮、堀良太、田村哲也、矢野裕司、冬木隆
- Organizer
  シリコン材料・デバイス研究会 (SDM)
- Place of Presentation
  京都大学桂キャンパス、京都市西京区
- Data Source
  KAKENHI-PROJECT-23560367
[Presentation] 異なるﾊﾛｹﾞﾝｶﾞｽを用いたSiCの熱エッチング特性
- Author(s)
  畑山　智亮、堀　良太、矢野　裕司、冬木　隆
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同支社大学、京都府京田辺市
- Data Source
  KAKENHI-PROJECT-23560367
[Presentation] ハロゲン系ガスにより熱エッチングされた炭化ケイ素の表面形状
- Author(s)
  畑山智亮、田村哲也、矢野裕司、冬木隆
- Organizer
  第73回応用物理学学術講演会
- Place of Presentation
  愛媛大学、愛媛県松山市
- Data Source
  KAKENHI-PROJECT-23560367
[Presentation] フッ素系および塩素ガスを用いた炭化ケイ素の熱エッチング
- Author(s)
  畑山智亮、堀良太、田村哲也、矢野裕司、冬木隆
- Organizer
  第21回SiC及び関連ワイドギャップ半導体研究会
- Place of Presentation
  大阪市中央公会堂、大阪市北区中之島1-1-27
- Data Source
  KAKENHI-PROJECT-23560367

1. YANO Hiroshi (40335485)

# of Collaborated Projects: 8 results

# of Collaborated Products: 55 results
2. YUKIHARU Uraoka (20314536)

# of Collaborated Projects: 5 results

# of Collaborated Products: 54 results
3. FUYUKI Takashi (10165459)

# of Collaborated Projects: 5 results

# of Collaborated Products: 25 results
4. IKEDA Atsuchi (90274505)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. YAMASHITA Ichiro

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. YAMAMOTO Shin-Ichi (70399260)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. KIMURA Mutsumi (60368032)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

HATAYAMA Tomoaki 畑山 智亮

Research Projects

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電力変換損失の低減へ向けた特異な結晶面による炭化ケイ素デバイスPrincipal Investigator

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二次元核発生頻度の制御による双晶が無い立方晶の炭化ケイ素成長Principal Investigator

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Laser Crystallization of non two-dimensional Si substrates and their device application

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Research of dislocation-free silicon-carbide growthPrincipal Investigator

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Nano structure fabrication by Self-assembling ability

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Random Tunneling Conduction in 2 Dimensional Bio-nano Dot Arrays and Application to Stochastic Resonant Tunneling Devices

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Surface Modification and High-Resolution Nondistractive Analysis toward Dislocation-free SiC GrowthPrincipal Investigator

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Research of Bio-nano Display using Ferritin Protein

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Two dimensional crystallization of ferritin protein for nano-scale process in semiconductor fabrication

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Self assembly of quantum dot and application to electron device using bio-nano process

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[Journal Article] Comparison of etch pit shapes on off-oriented 4H-SiC using different halogen gases2013

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[Journal Article] Single etch-pit shape on off-angled 4H-SiC(0001) Si-face formed by chlorine trifluoride2012

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NAID

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[Journal Article] 塩素系ガスによるSiCのプラズマレス・エッチング2012

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[Journal Article] Shape control of trenched 4H-SiC C face by thermal chlorine etching2012

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HATAYAMA Tomoaki 畑山智亮