Satake Akihiro 佐竹昭泰

… Alternative Names

SATAKE Akihiro 佐竹昭泰

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Researcher Number	90325572
Other IDs
Affiliation (Current)	2025: 九州工業大学, 大学院工学研究院, 准教授
Affiliation (based on the past Project Information) *help	2004 – 2006: 九州工業大学, 工学部, 助手 2000: Kyushu Institute of Technology, Dept.of Electrical Engineering, Assistant, 工学部・電気工学科, 助手
Review Section/Research Field	Except Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering
Keywords	Except Principal Investigator InGaN / photoluminescence / quantum well / GaAs / フォトルミネッセンス / Stark effects / carrier capture / electroluminescence / light-emitting diode / III-nitride semiconductors … More / フォトルミネッサンス / 発行ダイオード / 量子井戸構成 / シュタルク電界効果 / キャリアー捕獲 / エレクトロルミネッセンス / 発光ダイオード / 窒化ガリウム系半導体 / 量子井戸構造 / radiative recombination lifetime / emission dynamics / time-resolved emission / quantum capture / exciton / 発光再結合寿命 / 発光ダイナミクス / 時間分解発光 / 量子捕獲 / 励起子 / 量子井戸 Less

Carrier quantum capture and escape mechanisms in semiconductor quantum structures
- Principal Investigator
  
  FUJIWARA Kenzo
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  KYUSHU INSTITUTE OF TECHNOLOGY
Quantum capture dynamics between different semiconductor quantum structures
- Principal Investigator
  
  FUJIWARA Kenzo
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  KYUSHU INSTITUTE OF TECHNOLOGY

All 2007 2006 2005 2004

All Journal Article

[Journal Article] Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes2007
- Author(s)
  T.Inada, A.Satake, K.Fujiwara
- Journal Title
  
  Physica Status Solidi (c) 4[7]
  
  Pages: 2768-2771
- NAID
  120002440609
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes2007
- Author(s)
  T.Inada, A.Satake, K.Fujiwara
- Journal Title
  
  Physica Status Solidi (c) (In print)
- NAID
  120002440609
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes2007
- Author(s)
  T.Inada, A.Satake, K.Fujiwara
- Journal Title
  
  Physica Status Solidi (c)4[7]
  
  Pages: 2768-2771
- NAID
  120002440609
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Carrier capture and escape processes in (In,Ga)N single-quantum-well diode under forward bias condition by photoluminescence spectroscopy2006
- Author(s)
  A.Satake, K.Soejima, H.Aizawa, K.Fujiwara
- Journal Title
  
  Physica Status Solidi(b) (in print)
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Internal and external field effects on radiative recombination efficiency in InGaN quantum well diodes2006
- Author(s)
  H.Aizawa, K.Soejima, A.Hori, A.Satake, K.Fujiwara
- Journal Title
  
  Physica Status Solidi(c) 3・3
  
  Pages: 589-593
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Carrier capture and escape processes in (In,Ga)N single-quantum-well diode under forward bias condition by photoluminescence spectroscopy2006
- Author(s)
  A.Satake, K.Soejima, H.Aizawa, K.Fujiwara
- Journal Title
  
  Physica Status Solidi (c) 3[6]
  
  Pages: 2203-2206
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Internal and external field effects on radiative recombination efficiency in InGaN quantum well diodes2006
- Author(s)
  H.Aizawa, K.Soejima, A.Hori, A.Satake, K.Fujiwara
- Journal Title
  
  Physica Status Solidi (c) 3[3]
  
  Pages: 589-593
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Carrier capture and escape processes in (In, Ga)N single-quantum-well diode under forward bias condition by photoluminescence spectroscopy2006
- Author(s)
  A.Satake, K.Soejima, H.Aizawa, K.Fujiwara
- Journal Title
  
  Physica Status Solidi (c)3[6]
  
  Pages: 2203-2206
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes2006
- Author(s)
  H.Aizawa, K.Soejima, A.Hori, A.Satake, K.Fujiwara
- Journal Title
  
  Physica Status Solidi (c)3[3]
  
  Pages: 589-593
- NAID
  120002440526
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Impact of the forward bias on the radiative recombination efficiency in blue (In,Ga)N/GaN quantum-well diodes with an electron reservoir layer2005
- Author(s)
  N.Otsuji, Y.Takahashi, A.Satake, K.Fujiwara, J.K.Shue, U.Jahn, H.Kostial, H.T.Grahn
- Journal Title
  
  Proceedings of 13th International Semiconducting and Insulating Materials Conference (Beijing, China, September 20-24, 2004) (印刷中)
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Impact of the forward bias on the radiative recombination efficiency in blue (In, Ga)N/GaN quantum-well diodes with an electron reservoir layer2004
- Author(s)
  N.Otsuji, Y.Takahashi, A.Satake, K.Fujiwara, J.K.Shue, U.Jahn, H.Kostial, H.T.Grahn
- Journal Title
  
  Proceedings of 13th International Semiconducting and Insulating Materials Conference (Bejin, China, September 20-24, 2004)
  
  Pages: 276-280
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360157
[Journal Article] Impact of the forward bias on the radiative recombination efficiency in blue (In,Ga)N/GaN quantum-well diodes with an electron reservoir layer2004
- Author(s)
  N.Otsuji, Y.Takahashi, A.Satake, K.Fujiwara, J.K.Shue, U.Jahn, H.Kostial, H.T.Grahn
- Journal Title
  
  Proceedings of 13th International Semiconducting and Insulating Materials Conference (Beijing, China, September 20-24, 2004)
  
  Pages: 276-280
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360157

1. FUJIWARA Kenzo (90243980)

# of Collaborated Projects: 2 results

# of Collaborated Products: 12 results

Satake Akihiro 佐竹 昭泰

SATAKE Akihiro 佐竹 昭泰

Research Projects

Research Products

Co-Researchers

Carrier quantum capture and escape mechanisms in semiconductor quantum structures

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Quantum capture dynamics between different semiconductor quantum structures

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes2007

Author(s)

Journal Title

NAID

Description

Data Source

[Journal Article] Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes2007

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Significance of vertical carrier capture for electroluminescence efficiency in InGaN multiple-quantum well diodes2007

Author(s)

Journal Title

NAID

Description

Data Source

[Journal Article] Carrier capture and escape processes in (In,Ga)N single-quantum-well diode under forward bias condition by photoluminescence spectroscopy2006

Author(s)

Journal Title

Data Source

[Journal Article] Internal and external field effects on radiative recombination efficiency in InGaN quantum well diodes2006

Author(s)

Journal Title

Data Source

[Journal Article] Carrier capture and escape processes in (In,Ga)N single-quantum-well diode under forward bias condition by photoluminescence spectroscopy2006

Author(s)

Journal Title

Description

Data Source

[Journal Article] Internal and external field effects on radiative recombination efficiency in InGaN quantum well diodes2006

Author(s)

Journal Title

Description

Data Source

[Journal Article] Carrier capture and escape processes in (In, Ga)N single-quantum-well diode under forward bias condition by photoluminescence spectroscopy2006

Author(s)

Journal Title

Description

Data Source

[Journal Article] Interplay of external and internal field effects on radiative recombination efficiency in InGaN quantum well diodes2006

Author(s)

Journal Title

NAID

Description

Data Source

[Journal Article] Impact of the forward bias on the radiative recombination efficiency in blue (In,Ga)N/GaN quantum-well diodes with an electron reservoir layer2005

Author(s)

Journal Title

Data Source

[Journal Article] Impact of the forward bias on the radiative recombination efficiency in blue (In, Ga)N/GaN quantum-well diodes with an electron reservoir layer2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Impact of the forward bias on the radiative recombination efficiency in blue (In,Ga)N/GaN quantum-well diodes with an electron reservoir layer2004

Author(s)

Journal Title

Description

Data Source

Satake Akihiro 佐竹昭泰

SATAKE Akihiro 佐竹昭泰