Saraya Takuya 更屋拓哉

… Alternative Names

SARAYA Takuya 更屋拓哉

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Researcher Number	90334367
Other IDs
Affiliation (Current)	2025: 東京大学, 生産技術研究所, 助手
Affiliation (based on the past Project Information) *help	2013 – 2016: 東京大学, 生産技術研究所, 助手 2004 – 2009: 東京大学, 生産技術研究所, 助手
Review Section/Research Field	Except Principal Investigator Electron device/Electronic equipment / Microdevices/Nanodevices / Science and Engineering
Keywords	Except Principal Investigator MOSFET / 大規模集積回路 / 半導体物性 / CMOS / ナノワイヤトランジスタ / MOSトランジスタ / 特性ばらつき / 単電子トランジスタ / 電子デバイス・機器 / 低消費電力 … More / VLSI / 規模集積回路 / しきい値電圧自己調整 / ナノワイヤ / クーロンブロッケード振動 / 集積回路 / Beyond CMOS / Analog Pattern Matching Circuit / Functional Device / Coulomb Blockade / Quantum Effect Device / Single-Electron Transistor / Nanoelectronics / 室温動作 / 量子効果 / CMOS回路 / ナノテクノロジー / 量子效果デバイス / アナログパターンマッチング回路 / 新機能デバイス / クーロンブロッケード / 量子効果デバイス / ナノエレクトロニクス / 統計分布 / 単一不純物 / 離散不純物ゆらぎ / シリコンナノワイヤトランジスタ / サブスレッショルド / 超低消費電力 / 超低エネルギー / 電子デバイス・集積回路 / 不純物ゆらぎ / 基板バイアス効果 / 半導体超微細化 / 正規分布 / ランダムテレグラフノイズ / 微細化 / 不純物揺らぎ / 半導体 / SRAM / SOI / しきい値電圧 Less

Ultra-Low Voltage Operating Silicon Nanowire Transistors with Threshold Voltage Self-Adjusting Mechanism
- Principal Investigator
  
  Hiramoto Toshiro
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Basic research on influence of single impurity atom on statistics of nanoscale transistor characteristics
- Principal Investigator
  
  HIRAMOTO Toshiro
- Project Period (FY)
  2014
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Basic research on ultra-low voltage MOS transistors aiming at sub-100mV operation
- Principal Investigator
  
  HIRAMOTO Toshiro
- Project Period (FY)
  2013
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Creation of New Functionalities by Integration of Room-Temperature Operating Single Electron Transistors and Large-Scale CMOS Circuits
- Principal Investigator
  
  Hiramoto Toshiro
- Project Period (FY)
  2011 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Nano MOSFET Fluctuations and Device Integrity
- Principal Investigator
  
  HIRAMOTO Toshiro
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
A research on silicon nano-devices for single-electron, quantum, CMOS integrated circuits operating at room temperature
- Principal Investigator
  
  HIRAMOTO Toshiro
- Project Period (FY)
  2004 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  The University of Tokyo

All 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005

All Journal Article Presentation

[Journal Article] Peak Position Control of Coulomb Blockade Oscillations in Silicon Single-Electron Transistors with Floating Gate Operating at Room Temperature2014
- Author(s)
  Yuma Tanahashi, Ryota Suzuki, Takuya Saraya, Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 4S Pages: 04EJ08-04EJ08
- DOI
  10.7567/jjap.53.04ej08
- NAID
  210000143664
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-23246064
[Journal Article] Integration of Complementary Metal-Oxide-Semiconductor 1-Bit Analog Selectors and Single-Electron Transistors Operating at Room Temperature2013
- Author(s)
  Ryota Suzuki, Motoki Nozue, Takuya Saraya, and Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 4S Pages: 04CJ05-04CJ05
- DOI
  10.7567/jjap.52.04cj05
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10J07824, KAKENHI-PROJECT-23246064
[Journal Article] Experimental Observation of Quantum Confinement Effect in (110) and (100) Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature2013
- Author(s)
  Ryota Suzuki, Motoki Nozue, Takuya Saraya, and Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 10R Pages: 104001-104001
- DOI
  10.7567/jjap.52.104001
- NAID
  40022765823
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-23246064
[Journal Article] Variable Body-Factor SOI MOSFET with Ultrathin Buried Oxide for Adaptive Threshold Voltage and Leakage Control2008
- Author(s)
  Tetsu Ohtou, Takuya Saraya, and Toshiro Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices 54
  
  Pages: 40-46
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Variable Body-Factor SOI MOSFET with Ultrathin Buried Oxide for Adaptive Threshold Voltage and Leakage Control2008
- Author(s)
  T. Ohtou, T. Saraya, and T. Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices(Invited) vol. 54, no. 1
  
  Pages: 40-46
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Variable Body-Factor SOI MOSFET with Ultrathin Buried Oxide for Adaptive Threshold Voltage and Leakage Control2008
- Author(s)
  T.Ohtou, T.Saraya, T.Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices vol.54, no.1
  
  Pages: 40-46
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Experimental Study on Breakdown of Mobility Universality in <100>-directed (110)-oriented pMOSFETs2007
- Author(s)
  K. Shimizu, G Tsutsui, D. Januar, T. Saraya, T. Hiramoto
- Journal Title
  
  IEEE Transactions on Nanotechnology Vol. 6, No. 3
  
  Pages: 358-361
- NAID
  10018234140
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Experimental Study on Breakdown of Mobility Universality in <100>-directed (110)-oriented pMOSFETs2007
- Author(s)
  K. Shimizu, G. Tsutsui, D. Januar, T. Saraya, T. Hiramoto
- Journal Title
  
  IEEE Transactions on Nanotechnology Vol. 6, No. 3
  
  Pages: 358-361
- NAID
  10018234140
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] 浮遊ゲートを有する室温動作シリコン単電子トランジスタにおけるクーロンブロッケード振動のピーク位置制御2014
- Author(s)
  棚橋裕麻，鈴木龍太，更屋拓哉，平本俊郎
- Organizer
  2014年第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] Ultra-Low Voltage (0.1V) Operation of Vth Self-Adjusting MOSFET and SRAM Cell2014
- Author(s)
  Akitsugu Ueda, Seung-Min Jung, Tomoko Mizutani, Anil Kumar, Takuya Saraya, and Toshiro Hiramoto
- Organizer
  VLSI Symposium on Technology
- Place of Presentation
  Hilton Hawaiian Village, Honolulu, HI. USA
- Year and Date
  2014-06-12
- Data Source
  KAKENHI-PROJECT-25630135
[Presentation] Ultra-Low Voltage (0.1V) Operation of Vth Self-Adjusting MOSFET and SRAM Cell2014
- Author(s)
  Akitsugu Ueda, Seung-Min Jung, Tomoko Mizutani, Anil Kumar, Takuya Saraya, and Toshiro Hiramoto
- Organizer
  VLSI Symposium on Technology
- Place of Presentation
  Honolulu, HI. USA
- Data Source
  KAKENHI-PROJECT-25630135
[Presentation] Peak Position Control of Coulomb Oscillations in Silicon Single-Electron Transistors with Floating Gate Operating at Room Temperature2013
- Author(s)
  Yuma Tanahashi, Ryota Suzuki, Takuya Saraya, and Toshiro Hiramoto
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Fukuoka
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] Integration of Room-Temperature Operating Single-Electron Transistors with CMOS Circuits2013
- Author(s)
  Toshiro Hiramoto, Ryota Suzuki, and Takuya Saraya
- Organizer
  Sweden-Japan Workshop on Quantum Nano-Physics and Electronics (QNANO2013)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] 単電子トランジスタとCMOS回路の集積化に関する研究2013
- Author(s)
  鈴木龍太，野末喬城，更屋拓哉，平本俊郎
- Organizer
  固体エレクトロニクス・光エレクトロニクス研究会
- Place of Presentation
  東京大学
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] 室温動作シリコン単電子トランジスタとCMOSアナログセレクタ回路の集積化2013
- Author(s)
  鈴木龍太，野末喬城，更屋拓哉，平本俊郎
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] Integration of Room-Temperature Operating Silicon Single-Electron Transistors and CMOS Circuits for Novel Information Processing2013
- Author(s)
  Toshiro Hiramoto, Ryota Suzuki, and Takuya Saraya
- Organizer
  9th International Nanotechnology Conference on Communication and Cooperation (INC9)
- Place of Presentation
  Berlin, Germany
- Year and Date
  2013-05-16
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] 室温動作単電子トランジスタとCMOS 1-bitアナログセレクタの集積化2013
- Author(s)
  鈴木龍太，野末喬城，更屋拓哉，平本俊郎
- Organizer
  電子情報通信学会シリコンデバイス・材料(SDM)研究会
- Place of Presentation
  北海道大学
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] シリコンナノワイヤチャネルを有する室温動作単電子/単正孔トランジスタにおけるドット形成メカニズム2012
- Author(s)
  鈴木龍太，野末喬城，更屋拓哉，平本俊郎
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] Reinvestigation of Dot Formation Mechanisms in Silicon Nanowire Channel Single-Electron/Hole Transistors Operating at Room Temperature2012
- Author(s)
  Ryota Suzuki, Motoki Nozue, Takuya Saraya, and Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  Honolulu, HI. USA
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] Fully CMOS-Compatible Fabrication Process of Room-Temperature Operating Silicon Single-Electron Transistors2012
- Author(s)
  Ryota Suzuki, Motoki Nozue, Takuya Saraya, and Toshiro Hiramoto
- Organizer
  8th International Nanotechnology Conference on Communication and Cooperation (INC8)
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] Integration of 1-bit CMOS Address Decoders and Single-Electron Transistors Operating at Room Temperature2012
- Author(s)
  Ryota Suzuki, Motoki Nozue, Takuya Saraya, and Toshiro Hiramoto
- Organizer
  2012 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] Statistical Comparison of Random Telegraph Noise (RTN) in Bulk and Fully Depleted SOI MOSFETs2011
- Author(s)
  J.Nishimura, T.Saraya, T.Hiramoto
- Organizer
  Ultimate Integration of Silicon (ULIS)
- Place of Presentation
  Cork, Ireland
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Simultaneously improvement of Write and Static Noise Margins in SRAM by Post-Fabrication Self-Convergence Technique2010
- Author(s)
  M.Suzuki, T.Saraya, K.Shimizu, T.Sakurai, T.Hiramoto
- Organizer
  Workshop "The Fruits of Variability Research in Europe", Design, Automation & Test in Europe (DATE)
- Place of Presentation
  International Congress Centre in Dresden, Dresden, Germany
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs2010
- Author(s)
  T.Hiramoto, T.Saraya, C.Lee
- Organizer
  International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE)
- Place of Presentation
  Tokyo Institute of Technology
- Year and Date
  2010-06-03
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Silicon Nanowire FETs and Single-Electron/Hole Transistors under Uniaxial Strain at Room Temperature2009
- Author(s)
  Toshiro Hiramoto, Jiezhi Chen, YeonJoo Jeong, Takuya Saraya (Invited)
- Organizer
  International Symposium on Nanoscale Transport and Technology (NTT2009) (p. 99)
- Place of Presentation
  NTT Atsugi R&C Center, Kanagawa
- Year and Date
  2009-01-22
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Silicon Nanowire FETs and Single-Electron/Hole Transistors under Uniaxial Strain at Room Temperature2009
- Author(s)
  Toshiro Hiramoto, Jiezhi Chen, Yeon Joo Jeong, Takuya Saraya (Invited)
- Organizer
  International Symposium on Nanoscale Transport and, Technology (NTT2009)
- Place of Presentation
  厚木
- Year and Date
  2009-01-22
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Improvement of Static Noise Margin in SRAM by Post-Fabrication Self-Convergence Technique2009
- Author(s)
  M.Suzuki, T.Saraya, K.Shimizu, T.Sakurai, T.Hiramoto
- Organizer
  International Semiconductor Device Research Symposium (ISDRS), TP7-03
- Place of Presentation
  University of Maryland, MD, USA
- Year and Date
  2009-12-10
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Post-Fabrication Self-Convergence Scheme for Suppressing Variability in SRAM Cells and Logic Transistors2009
- Author(s)
  M.Suzuki, T.Saraya, K.Shimizu, T.Sakurai, T.Hiramoto
- Organizer
  Symposium on VLSI Technology, pp.148-149
- Place of Presentation
  Kyoto
- Year and Date
  2009-06-16
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Experimental Study of Mobility in [110]- and[100]-Directed Multiple Silicon Nanowire GAA MOSFETs on (100) SOI2008
- Author(s)
  Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Ken Shimizu, Toshiro Hiramoto
- Organizer
  Symposium on VLSI Technology
- Place of Presentation
  米国ハワイ
- Year and Date
  2008-06-17
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Investigation on the Origin of Direction Dependence of Si (110) Hole Mobility Utilizing Ultra-Thin Body pMOSFETs2008
- Author(s)
  Ken Shimizu, Takuya Saraya, Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM)
- Place of Presentation
  米国サンフランシスコ
- Year and Date
  2008-12-15
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Study of Mobility in [110]- and [100]-Directed Multiple Silicon Nanowire GAA MOSFETs on (100) SOI2008
- Author(s)
  Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Ken Shimizu, Toshiro Hiramoto
- Organizer
  Symposium on VLSI Technology (pp. 32 - 33)
- Place of Presentation
  Hilton Hawaiian Village. HI. USA
- Year and Date
  2008-06-17
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Nanowire Channel Nanocrystal Memory with P-Doped Silicon Nanocrystals2008
- Author(s)
  Toshiro Hiramoto, Yuji Takahashi, Kousuke Miyaji, Takuya Saraya
- Organizer
  IEEE Nanotechnology Materials and Devices Conference (p. 57)
- Place of Presentation
  Kyoto University
- Year and Date
  2008-10-20
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Nanowire Channel Nanocrystal Memory with P-Doped Silicon Nanocrystals2008
- Author(s)
  Toshiro Hiramoto, Yuji Takahashi, Kousuke Miyaji, Takuya Saraya
- Organizer
  IEEE Nanotechnology Materials and Devices Conference
- Place of Presentation
  京都
- Year and Date
  2008-10-20
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Uniaxial Strain Effects on Silicon Nanowire pMOSFET and Single-Hole Transistor at Room Temperature2008
- Author(s)
  YeonJoo Jeong, Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM) (pp. 761 - 764)
- Place of Presentation
  San Francisco, CA. USA
- Year and Date
  2008-12-17
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Electron Mobility in Multiple Silicon Nanowires GAA nMOSFETs on (110) and (100) SOI at Room and Low Temperature2008
- Author(s)
  Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM) (pp. 757 - 760)
- Place of Presentation
  San Francisco, CA, USA
- Year and Date
  2008-12-17
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Uniaxial Strain Effects on Silicon Nanowire pMOSFET and Single-Hole Transistor at Room Temperature2008
- Author(s)
  Yeon Joo Jeong, Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM)
- Place of Presentation
  米国サンフランシスコ
- Year and Date
  2008-12-17
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Investigation on the Origin of Direction Dependence of Si (110) Hole Mobility Utilizing Ultra-Thin Body pMOSFETs2008
- Author(s)
  Ken Shimizu, Takuya Saraya, Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM) (pp. 67 - 70)
- Place of Presentation
  San Francisco. CA, USA
- Year and Date
  2008-12-15
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Electron Mobility in Multiple Silicon Nanowires GAA nMOSFETs on (110) and (100) SOI at Room and Low Temperature2008
- Author(s)
  Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM)
- Place of Presentation
  米国サンフランシスコ
- Year and Date
  2008-12-17
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Demonstrations of Superior Characteristics of Variable Body-Factor (γ) Fully-Depleted SOI MOSFETs with Extremely Thin BOX of 10nm2006
- Author(s)
  T.Ohtou, T.Saraya, K.Shimokawa, Y.Doumae, Y.Nagatomo, J.Ida, T.Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM), pp.877-880
- Place of Presentation
  San Francisco, CA, USA
- Year and Date
  2006-12-13
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Mobility Enhancement in (110)-Oriented Ulta-Thin-Body Single-Gate and Double-Gate SOI MOSFETs2006
- Author(s)
  T. Hiramoto, G. Tsutsui, M. Saitoh, T. Nagumo, T. Saraya
- Organizer
  International Workshop on Nano CMOS
- Place of Presentation
  静岡
- Year and Date
  2006-01-30
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility Enhancement in (110)-Oriented Ulta-Thin-Body Single-Gate and Double-Gate SOI MOSFETs2006
- Author(s)
  T. Hiramoto, G. Tsutsui, M. Saitoh, T. Nagumo, T. Saraya
- Organizer
  International Workshop on Nano CMOS (pp. 14-15)
- Place of Presentation
  Toray Sougou Kensyu Center, Mishima, Shizuoka
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Study on Breakdown of Mobility Universality in <100>-Directed (110)-Oriented pMOSFETs2006
- Author(s)
  K. Shimizu, G. Tsutsui, D. Januar, T. Saraya, T. Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  米国ホノルル
- Year and Date
  2006-06-11
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Study on Breakdown of Mobility Universality in <100>-Directed (110)-Oriented pMOSFETs2006
- Author(s)
  K. Shimizu, G. Tsutsui, D. Januar. T. Saraya, T. Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop (pp. 11-12)
- Place of Presentation
  Hilton Hawaiian Village, Honolulu, HI, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility Enhancement due to Volume Inversion in (110)-oriented Ultra-thin Body Double-gate nMOSFETs with Body Thickness less than 5 nm2005
- Author(s)
  Gen Tsutsui, Masumi Saitoh, Takuya Saraya, Toshiharu Nagumo, Toshiro Hiramoto
- Organizer
  International Electron Devices Meeting (IEDM)
- Place of Presentation
  米国ワシントン
- Year and Date
  2005-12-07
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility Enhancement due to Volume Inversion in (110)-oriented Ultra-thin Body Double-gate nMOSFETs with Body Thickness less than 5 nm2005
- Author(s)
  Gen Tsutsui, Masumi Saitoh, Takuya Saraya, Toshiharu Nagumo, Toshiro Hiramoto
- Organizer
  International Electron Devices Meeting (1EDM) (pp. 747-750)
- Place of Presentation
  Washington D. C., USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029

1. HIRAMOTO Toshiro (20192718)

# of Collaborated Projects: 6 results

# of Collaborated Products: 44 results
2. SAKURAI Takayasu (90282590)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. Masaharu Kobayashi (40740147)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 川口博 (00361642)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Saraya Takuya 更屋 拓哉

SARAYA Takuya 更屋 拓哉

Research Projects

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Ultra-Low Voltage Operating Silicon Nanowire Transistors with Threshold Voltage Self-Adjusting Mechanism

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Basic research on influence of single impurity atom on statistics of nanoscale transistor characteristics

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Basic research on ultra-low voltage MOS transistors aiming at sub-100mV operation

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Creation of New Functionalities by Integration of Room-Temperature Operating Single Electron Transistors and Large-Scale CMOS Circuits

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Nano MOSFET Fluctuations and Device Integrity

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A research on silicon nano-devices for single-electron, quantum, CMOS integrated circuits operating at room temperature

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[Journal Article] Peak Position Control of Coulomb Blockade Oscillations in Silicon Single-Electron Transistors with Floating Gate Operating at Room Temperature2014

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[Journal Article] Integration of Complementary Metal-Oxide-Semiconductor 1-Bit Analog Selectors and Single-Electron Transistors Operating at Room Temperature2013

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[Journal Article] Experimental Observation of Quantum Confinement Effect in (110) and (100) Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature2013

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[Journal Article] Variable Body-Factor SOI MOSFET with Ultrathin Buried Oxide for Adaptive Threshold Voltage and Leakage Control2008

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[Journal Article] Variable Body-Factor SOI MOSFET with Ultrathin Buried Oxide for Adaptive Threshold Voltage and Leakage Control2008

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[Journal Article] Variable Body-Factor SOI MOSFET with Ultrathin Buried Oxide for Adaptive Threshold Voltage and Leakage Control2008

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[Journal Article] Experimental Study on Breakdown of Mobility Universality in <100>-directed (110)-oriented pMOSFETs2007

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Description

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[Journal Article] Experimental Study on Breakdown of Mobility Universality in <100>-directed (110)-oriented pMOSFETs2007

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Saraya Takuya 更屋拓哉

SARAYA Takuya 更屋拓哉