Gozu Shinichirou 牛頭信一郎

… Alternative Names

Shin-ichiro Gozu 牛頭信一郎

GOZU Shin-ichro 牛頭信一郎

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Researcher Number	90392729
Other IDs
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Affiliation (based on the past Project Information) *help	2017: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 2015 – 2016: 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 2014: 独立行政法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 2008: 独立行政法人産業技術総合研究所, ネットワークフォトニクス研究センター, 産総研特別研究員 2008: 産業技術総合研究所, ネットワークフォトニクス研究センター, 特別研究員 2007: 産業技術総合研究所, 超高速光信号処理デバイス研究ラボ, 一号職員
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment Except Principal Investigator Science and Engineering
Keywords	Principal Investigator 光吸収 / 漏れ電流 / 吸収線幅 / ＭＢＥ / ＱＷＩＰ / 暗電流 / 相互拡散 / 分子線エピタキシ / サブバンド間遷移 / 光検出器 … More Except Principal Investigator … More ドーピング濃度 / 不均一広がり / 均一広がり / 位相緩和時間 / 歪補償 / 光閉じ込め / AlAsSb / AlAs / InGaAs / サブバンド間遷移スイッチ / 屈折率 / フォトリフレクタンス / 超高速全光スイッチ / 超高速光信号処理 / ピコ秒 / 周期構造 / 有効質量 / バンドオフセット / 歪補償量子井戸構造 / 超薄膜結合量子井戸 / 超高速ゲートスイッチ / MBE / 全光位相変調効果 / サブバンド間遷移 / 量子井戸 Less

Development of photodetector using intersubband transition for the communication wavelength bandPrincipal Investigator
- Principal Investigator
  
  Shin-ichiro Gozu
- Project Period (FY)
  2014 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Low-energy operation of ultrafast all-optical gate switch for all-optical signal processing
- Principal Investigator
  
  ISHIKAWA Hiroshi
- Project Period (FY)
  2005 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  National Institute of Advanced Industrial Science and Technology

All 2016 2014 2009 2008 2007

All Journal Article Presentation

[Journal Article] Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled double quantum wells with extremely thin AlAs-center-barrier2009
- Author(s)
  S. Gozu, T. Mozume, and H. Ishikawa
- Journal Title
  
  J. Crystal Growth vol.311
  
  Pages: 1700-1702
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068013
[Journal Article] Cross Phase modulation efficiency enhancement in In_<0.8>Ga_<0.2>As/Al_<0.5>Ga_<0.5>As/AlAs_<0.56>Sb_<0.44> coupled double quantum wells by tailoring interband transition wavelength2009
- Author(s)
  S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa
- Journal Title
  
  Applied Physics Express vol.2
- NAID
  10025085733
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068013
[Journal Article] Cross phase modulation efficiency enhancement in In_<0.8>Ga_<0.2>As/Al_<0.5>Ga_<0.5>As/AlAs_<0.56>Sb_<0.44> coupled double quantum wells by tailoring interband transition wavelength2009
- Author(s)
  S. Gozu, et al.
- Journal Title
  
  Appl. Physics Express 2
  
  Pages: 42201-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068013
[Journal Article] Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled double quantum wells with extremely thin AlAs-center-barrier2009
- Author(s)
  S. Gozu et al.
- Journal Title
  
  J. Crystal Growth 311
  
  Pages: 1700-1702
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] InGaAs/AlAs/InAlAs結合量子井戸の光吸収特性の成長温度依存性2016
- Author(s)
  牛頭信一郎
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-26420333
[Presentation] Growth Temperature Dependence of Optical Absorption Feature of Coupled Double Quantum Wells2016
- Author(s)
  牛頭信一郎
- Organizer
  The 32nd North American Conference on Molecular Beam Epitaxy
- Place of Presentation
  Gideon Putnam Hotel, Saratoga Springs, New York, USA
- Year and Date
  2016-09-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420333
[Presentation] ミニバンド構造を有する結合量子井戸のサブバンド間遷移光吸収特性2014
- Author(s)
  牛頭信一郎, 物集照夫
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-26420333
[Presentation] 薄いAlAs 層を有するIn0.8Ga0.2As/AlAs/AlAs0.56Sb0.44結合量子井戸のMBE成長 (査読無し)2009
- Author(s)
  牛頭信一郎, 他
- Organizer
  第69回応用物理学会秋季学術講講演会
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] サブバンド・バンド間遷移波長を制御したIn_<0.8>Ga_<0.2>As/AlGaAs/AlAs_<0.56>Sb_<0.44>結合量子井戸 (査読なし)2009
- Author(s)
  牛頭信一郎, 他
- Organizer
  第56回応用物理学関係連合講演
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] サブバンド・バンド間遷移波長を制御したIn0.8Ga0.2As/AlGaAs/Al0.56Sb0.44結合量子井戸2009
- Author(s)
  牛頭信一郎, 他
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学、つくば市
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] Plasma reflection from highly Si-doped InGaAs/AlAsSb quantum wells (査読あり)2008
- Author(s)
  S. Gozu, T. Mozume, and H. Ishikawa
- Organizer
  The Int. Conf. on the Physics of Semiconductors 29
- Place of Presentation
  Rio de Janeiro
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] Refractive index study of n-type InGaAs grown on InP substrate (査読あり)2008
- Author(s)
  S. Gozu T. Mozume and H. Ishikawa
- Organizer
  International Conference on Indium Phosphide and Related Materials
- Place of Presentation
  Versailles France
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] Interband transitions in strained InGaAs/AlAsSb multiple-quantum-well structures (査読あり3)2008
- Author(s)
  T. Mozume and S. Gozu
- Organizer
  International Conference on Physics of Semiconductors
- Place of Presentation
  Rio de Janeiro, Brazil
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled quantum wells with extremely thin AlAs-center-barrier2008
- Author(s)
  S. Gozu
- Organizer
  International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2008-08-05
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] Room temperature photoreflectance study of InGaAs/AlAsSb quantum wells (査読あり)2008
- Author(s)
  T. Mozume and S. Gozu
- Organizer
  International Conference on Indium Phosphide and Related Materials
- Place of Presentation
  Versailles France
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] n 型キャリヤ密度依存InGaAs 屈折率変化の解析 (査読なし)2008
- Author(s)
  牛頭信一郎, 他
- Organizer
  第55回応用物理学関係連合講演会
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled quantum wells with extremely thin AlAs-center-barrier (査読あり)2008
- Author(s)
  S. Gozu et al.
- Organizer
  Int. Conf. on Molecular Beam Epitaxy
- Place of Presentation
  Vancouver, Canada
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] Refractive index study of n-type InGaAs grown on InP substrates2008
- Author(s)
  S. Gozu, et al.
- Organizer
  International Conference on Indium Phosphide and Related Materials
- Place of Presentation
  Versailles, France
- Year and Date
  2008-05-28
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] 薄いAlAs層を有するIn0.8Ga0.2As/AlAs/AlAs0.56Sb0.44結合量子井戸のMBE成長2008
- Author(s)
  牛頭信一郎, 他
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学愛知県
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] n型キャリア密度依存InGaAs屈折率変化の解析2008
- Author(s)
  牛頭信一郎
- Organizer
  第68回応用物理学会秋季学術講演会
- Place of Presentation
  札幌
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] InGaAs屈折率のn型キャリア濃度依存性2007
- Author(s)
  牛頭信一郎
- Organizer
  InGaAs屈折率のn型キャリア濃度依存性
- Place of Presentation
  札幌
- Year and Date
  2007-09-08
- Data Source
  KAKENHI-PROJECT-17068013
[Presentation] InGaAs屈折率のn型キャリヤ濃度依存性 (査読なし)2007
- Author(s)
  牛頭信一郎, 他
- Organizer
  第68回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17068013

1. ISHIKAWA Hiroshi (50392585)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
2. MOZUME Teruo (20399497)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
3. NAGASE Masanori (80399500)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. KAWASHIMA Hitoshi (90356840)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. SUGIMOTO Yoshimasa (60415784)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. IKEDA Noki (10415771)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. AKIMOTO Ryoichi (30356349)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
8. HAZAMA Toshifumi (90357765)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. KUWATSUKA Haruhiko (40417150)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. AKITA Kazumichi (50470050)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
11. OGASAWAR Takeshi (00392598)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. GUAN Lim Cheng (10470048)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Gozu Shinichirou 牛頭 信一郎

Shin-ichiro Gozu 牛頭 信一郎

GOZU Shin-ichro 牛頭 信一郎

Research Projects

Research Products

Co-Researchers

Development of photodetector using intersubband transition for the communication wavelength bandPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Low-energy operation of ultrafast all-optical gate switch for all-optical signal processing

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled double quantum wells with extremely thin AlAs-center-barrier2009

Author(s)

Journal Title

Data Source

[Journal Article] Cross Phase modulation efficiency enhancement in In_<0.8>Ga_<0.2>As/Al_<0.5>Ga_<0.5>As/AlAs_<0.56>Sb_<0.44> coupled double quantum wells by tailoring interband transition wavelength2009

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Cross phase modulation efficiency enhancement in In_<0.8>Ga_<0.2>As/Al_<0.5>Ga_<0.5>As/AlAs_<0.56>Sb_<0.44> coupled double quantum wells by tailoring interband transition wavelength2009

Author(s)

Journal Title

Data Source

[Journal Article] Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled double quantum wells with extremely thin AlAs-center-barrier2009

Author(s)

Journal Title

Data Source

[Presentation] InGaAs/AlAs/InAlAs結合量子井戸の光吸収特性の成長温度依存性2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Growth Temperature Dependence of Optical Absorption Feature of Coupled Double Quantum Wells2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] ミニバンド構造を有する結合量子井戸のサブバンド間遷移光吸収特性2014

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] 薄いAlAs 層を有するIn0.8Ga0.2As/AlAs/AlAs0.56Sb0.44結合量子井戸のMBE成長 (査読無し)2009

Author(s)

Organizer

Data Source

[Presentation] サブバンド・バンド間遷移波長を制御したIn_<0.8>Ga_<0.2>As/AlGaAs/AlAs_<0.56>Sb_<0.44>結合量子井戸 (査読なし)2009

Author(s)

Organizer

Year and Date

Data Source

[Presentation] サブバンド・バンド間遷移波長を制御したIn0.8Ga0.2As/AlGaAs/Al0.56Sb0.44結合量子井戸2009

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Plasma reflection from highly Si-doped InGaAs/AlAsSb quantum wells (査読あり)2008

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Refractive index study of n-type InGaAs grown on InP substrate (査読あり)2008

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Interband transitions in strained InGaAs/AlAsSb multiple-quantum-well structures (査読あり3)2008

Author(s)

Gozu Shinichirou 牛頭信一郎

Shin-ichiro Gozu 牛頭信一郎

GOZU Shin-ichro 牛頭信一郎