Hosoi Takuji 細井卓治

… Alternative Names

細井卓治ホソイタクジ

HOSOI TAKUJI 細井卓治

HOSOI Takuji 細井卓治

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Researcher Number	90452466
Other IDs
Affiliation (Current)	2025: 国立研究開発法人物質・材料研究機構, ナノアーキテクトニクス材料研究センター, グループリーダー
Affiliation (based on the past Project Information) *help	2024: 関西学院大学, 工学部, 准教授 2021 – 2022: 関西学院大学, 工学部, 准教授 2020: 大阪大学, 工学研究科, 助教 2016 – 2017: 大阪大学, 大学院工学研究科, 助教 2014: 大阪大学, 大学院工学研究科, 助教 … More 2013 – 2014: 大阪大学, 工学(系)研究科(研究院), 助教 2011 – 2012: 大阪大学, 大学院・工学研究科, 助教 2009 – 2010: Osaka University, 工学研究科, 助教 Less
Review Section/Research Field	Principal Investigator Basic Section 29020:Thin film/surface and interfacial physical properties-related / Thin film/Surface and interfacial physical properties / Applied materials science/Crystal engineering Except Principal Investigator Electronic materials/Electric materials / Thin film/Surface and interfacial physical properties / Quantum beam science / Microdevices/Nanodevices
Keywords	Principal Investigator MOSFET / パワーデバイス / SiC / パワーエレクトロニクス / CMOS / 赤外線光学素子 / 赤外光学素子 / 薄膜トランジスタ / センシング / 赤外センシング … More / レーザー / 結晶化 / 赤外線 / GeSn / MOSトランジスタ / ショットキー接合 / ゲート絶縁膜 / GOI (Germanium On Insulator) / GOI(Germanium On Insulator) / SiGe(シリコンゲルマニウム) / 半導体基板 / 液相エピタキシャル成長 / SGOI基板 / GOI基板 / ゲルマニウム … More Except Principal Investigator ゲルマニウム / 電子・電気材料 / 半導体 / 作成・評価技術 / パワーエレクトロニクス / エピタキシャル成長 / 電気・電子材料 / 結晶成長 / 電子デバイス / 結晶工学 / シリコンフォトニクス / 表面・界面物性 / 光電子融合デバイス / Ⅳ族混晶半導体 / 界面反応 / 界面物性 / 量子ビーム / 光源技術 / X線 / 画像回復計算 / 超解像 / イメージング / Ｘ線 / 格子歪み / メタルナノドット / 不揮発性メモリ / ナノ粒子 / 自己組織化 / バックゲートトランジスタ / 選択成長 / シリコンゲルマニウム / 急速昇温加熱 / 液相エピタキシャル成長 / Ge on insulator Less

Development of Ideal SiO2/SIC interface by surface-and-reaction-controlled thermal oxidationPrincipal Investigator
- Principal Investigator
  
  細井卓治
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Kwansei Gakuin University
Development of GeSn-based NIR sensing devicesPrincipal Investigator
- Principal Investigator
  
  Hosoi Takuji
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Kwansei Gakuin University
  Osaka University
Development of Super-resolution Technique in Transmission X-ray Imaging using Embedded X-ray Targets
- Principal Investigator
  
  Shimura Takayoshi
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Quantum beam science
- Research Institution
  Osaka University
Improvement of SiO2/SiC interface properties with beam induced interface reactions and subsequent defect passivation
- Principal Investigator
  
  WATANABE HEIJI
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Fabrication of tensile-strained single-crystalline GeSn wires on an insulator by lateral liquid-phase epitaxy towards electronic and opto-electronic device applications
- Principal Investigator
  
  Shimura Takayoshi
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Improvement of SiO2/SiC interface quality by beam induced interface reactions
- Principal Investigator
  
  WATANABE HEIJI
- Project Period (FY)
  2013 – 2014
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Development of new functional semiconductors by utilizing novel liquid-phase crystallization technique and understanding of their optoelectronic properties
- Principal Investigator
  
  WATANABE HEIJI
- Project Period (FY)
  2013 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Osaka University
Fabrication of vertical strained-Ge MOSFETs by channel-last process and the electrical characterization
- Principal Investigator
  
  SHIMURA Takayoshi
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Development of SiC-based plasmonic transistors with Schottky source/drainPrincipal Investigator
- Principal Investigator
  
  HOSOI Takuji
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Osaka University
Fabrication and electrical characterization of GOI structures by rapid melt growth
- Principal Investigator
  
  SHIMURA Takayoshi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
二重接合自己組織化金属ナノ粒子単電子フラッシュメモリの開発
- Principal Investigator
  
  是津信行
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  Osaka University
Selective formation of germanium-on-insulator structures based on liquid phase epitaxy by laser annealingPrincipal Investigator
- Principal Investigator
  
  HOSOI Takuji
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Osaka University

All 2023 2022 2021 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 Other

All Journal Article Presentation Patent

[Journal Article] Fabrication and Luminescence Characterization of Ge Wires with Uniaxial Tensile Strains Applied using Internal Stresses in Deposited Metal Thin Films2023
- Author(s)
  Shimura Takayoshi、Tanaka Shogo、Hosoi Takuji、Watanabe Heiji
- Journal Title
  
  Journal of Electronic Materials
  
  Volume: － Issue: 8 Pages: 5053-5058
- DOI
  10.1007/s11664-023-10309-w
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02620, KAKENHI-PROJECT-23K22798
[Journal Article] Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates2023
- Author(s)
  T. Shimura, R. Yamaguchi, N. Tabuchi, M. Kondoh, M. Kuniyoshi, T. Hosoi, T. Kobayashi and H. Watanabe
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SC Pages: SC1083-SC1083
- DOI
  10.35848/1347-4065/acb9a2
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K04880, KAKENHI-PROJECT-20H02620, KAKENHI-PROJECT-23K22798
[Journal Article] Lightly doped n-type tensile-strained single-crystalline GeSn-on-insulator structures formed by lateral liquid-phase crystallization2018
- Author(s)
  H. Oka, T. Tomita, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 1 Pages: 011304-011304
- DOI
  10.7567/apex.11.011304
- NAID
  210000136058
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25246028, KAKENHI-PROJECT-15H03975, KAKENHI-PROJECT-16J00819
[Journal Article] Fabrication of tensile-strained single-crystalline GeSn on transparent substrate by nucleation-controlled liquid-phase crystallization2017
- Author(s)
  H. Oka, T. Amamoto, M. Koyama, Y. Imai, S. Kimura, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 110 Issue: 3 Pages: 032104-032104
- DOI
  10.1063/1.4974473
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25246028, KAKENHI-PROJECT-15H03975, KAKENHI-PROJECT-16J00819
[Journal Article] Cathodoluminescence study of SiO2/4H-SiC structures treated with high-temperature post-oxidation annealing2016
- Author(s)
  A. Chanthaphan, Y. Fukushima, K. Yamamoto, M. Aketa, H. Asahara, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Materials Science Forum
  
  Volume: 858 Pages: 445-448
- DOI
  10.4028/www.scientific.net/msf.858.445
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-14F04359, KAKENHI-PROJECT-15K13951
[Journal Article] Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers2015
- Author(s)
  S. Ogawa, R. Asahara, Y. Minoura, H. Sako, N. Kawasaki, I. Yamada, T. Miyamoto, T. Hosoi, T. Shimura and H. Watanabe
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 118 Issue: 23 Pages: 23704-23704
- DOI
  10.1063/1.4937573
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25246028
[Journal Article] Fabrication of High-quality Ge-on-insulator Structures by Lateral Liquid Phase Epitaxy2015
- Author(s)
  T. Shimura, Y. Suzuki, M. Matsue, K. Kajimura, K. Tominaga, T. Amamoto, T. Hosoi, and H. Watanabe
- Journal Title
  
  ECS Transactions
  
  Volume: 69 Issue: 5 Pages: 305-311
- DOI
  10.1149/06905.0305ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03975
[Journal Article] Cathodoluminescence study of radiative interface defects in thermally grown SiO2/4H-SiC(0001) structures2015
- Author(s)
  Y. Fukushima, A. Chanthaphan, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 106 Issue: 26 Pages: 261604-261604
- DOI
  10.1063/1.4923470
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13951, KAKENHI-PROJECT-14F04359
[Journal Article] Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high-k gate stack2015
- Author(s)
  T. Hosoi, Y. Minoura, R. Asahara, H. Oka, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 107 Issue: 25 Pages: 252104-252104
- DOI
  10.1063/1.4938397
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25246028
[Journal Article] Enhancement of photoluminescence from n-type tensile-strained GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy2015
- Author(s)
  T. Shimura, M. Matsue, K. Tominaga, K. Kajimura, T. Amamoto, T. Hosoi, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 107 Issue: 22 Pages: 221109-221109
- DOI
  10.1063/1.4936992
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25246028, KAKENHI-PROJECT-15H03975
[Journal Article] Comprehensive Study and Design of Scaled Metal/High-k/Ge Gate Stacks with Ultrathin Aluminum Oxide Interlayers2015
- Author(s)
  Ryohei Asahara, Iori Hideshima, Hiroshi Oka, Yuya Minoura, Shingo Ogawa, Akitaka, Yoshigoe, Yuden Teraoka, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 106 Issue: 23 Pages: 233503-233503
- DOI
  10.1063/1.4922447
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26420289, KAKENHI-PROJECT-25246028
[Journal Article] Strain-induced direct band gap shrinkage in local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy2014
- Author(s)
  M. Matsue, Y. Yasutake, S. Fukatsu, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 104 Issue: 3 Pages: 31106-31106
- DOI
  10.1063/1.4862890
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22681012, KAKENHI-PROJECT-24360120, KAKENHI-PROJECT-25246021, KAKENHI-PROJECT-25246028, KAKENHI-PROJECT-25600014
[Journal Article] Degradation of SiO2/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing2014
- Author(s)
  A. Chanthaphan, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 778-780 Pages: 541-541
- DOI
  10.4028/www.scientific.net/msf.778-780.541
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14F04359, KAKENHI-PROJECT-24686008
[Journal Article] Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties2014
- Author(s)
  T. Hosoi, I. Hideshima, R. Tanaka, Y. Minoura, A. Yoshigoe, Y. Teraoka, T. Shimura, and H. Watanabe
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 109 Pages: 137-141
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25246028
[Journal Article] Understanding and engineering of NiGe/Ge junction formed by phosphorous ion implantation after germanidation2014
- Author(s)
  H. Oka, Y. Minoura, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 105 Issue: 6 Pages: 062107-062107
- DOI
  10.1063/1.4893152
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25246028
[Journal Article] Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy2014
- Author(s)
  T. Hosoi, Y. Suzuki, T. Shimura, and H. Watanabe
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 105 Issue: 17 Pages: 173502-173502
- DOI
  10.1063/1.4900442
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360120, KAKENHI-PROJECT-25246028
[Journal Article] Retarded oxide growth on 4H-SiC(0001) substrates due to sacrificial oxidation2014
- Author(s)
  細井　卓治、上西　悠介、中野　佑紀、中村　孝、志村　考功、渡部　平司
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 562-565
- DOI
  10.4028/www.scientific.net/msf.778-780.562
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686008
[Journal Article] Improved bias-temperature instability characteristics in SiC metal-oxide-semiconductor devices with aluminum oxynitride dielectrics2014
- Author(s)
  A. Chanthaphan, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 12 Pages: 122105-122105
- DOI
  10.1063/1.4870047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14F04359, KAKENHI-PROJECT-24686008
[Journal Article] Insights into ultraviolet-induced electrical degradation of thermally grown SiO2/4H-SiC(0001) interface2014
- Author(s)
  D. Ikeguchi, T. Hosoi, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 1 Pages: 12107-12107
- DOI
  10.1063/1.4860987
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25630124
[Journal Article] Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics2013
- Author(s)
  Y. Minoura, A. Kasuya, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Applied Physics Letters
  
  Volume: 103 Issue: 3 Pages: 33502-33502
- DOI
  10.1063/1.4813829
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25246028
[Journal Article] Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing2013
- Author(s)
  渡部平司
- Journal Title
  
  Materials Science Forum
  
  Volume: 740-742 Pages: 741-744
- DOI
  10.4028/www.scientific.net/msf.740-742.741
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686008, KAKENHI-PROJECT-25630124
[Journal Article] Dielectric Properties of Thermally Grown S102 0n 4H-SiC (0001) Substrates2013
- Author(s)
  細井卓治
- Journal Title
  
  Materials Science Forum
  
  Volume: 740-742 Pages: 605-608
- DOI
  10.4028/www.scientific.net/msf.740-742.605
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686008
[Journal Article] Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth2010
- Author(s)
  T. Shimura, S. Ogiwara, C. Yoshimoto, T. Hosoi, and H. Watanabe
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 3 Pages: 066502-066502
- DOI
  10.1143/apex.2.066502
- NAID
  10027441491
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360149
[Journal Article] Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth2010
- Author(s)
  T.Shimura, T.Hosoi, et al.
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10027441491
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760009
[Journal Article] Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth2010
- Author(s)
  Takayoshi Shimura, Shimpei Ogiwara, Chiaki Yoshimoto, Takuji Hosoi, Heiji Watanabe
- Journal Title
  
  Appl.Phys.Express Vol.3
- NAID
  10027441491
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760009
[Journal Article] Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth2009
- Author(s)
  T. Hashimoto, C. Yoshimoto, T. Hosoi, T. Shimura, and H. Watanabe
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 2 Issue: 10 Pages: 105501-105501
- DOI
  10.1143/apex.3.105501
- NAID
  10025086916
- Data Source
  KAKENHI-PROJECT-21360149
[Journal Article] Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy : Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth2009
- Author(s)
  Tatsuya Hashimoto, Chiaki Yoshimoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
- Journal Title
  
  Appl.Phys.Express Vol.2
- NAID
  10025086916
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760009
[Patent] 単結晶状GeSn含有材料の製造方法および単結晶状GeSn含有材料基板2012
- Inventor(s)
  志村考功、渡部平司、細井卓治
- Industrial Property Rights Holder
  大阪大学
- Industrial Property Number
  2012-042746
- Filing Date
  2012-02-29
- Data Source
  KAKENHI-PROJECT-21360149
[Patent] 半導体記録素子製造方法2009
- Inventor(s)
  是津信行、細井卓治、山村和也
- Industrial Property Rights Holder
  大阪大学
- Industrial Property Number
  2009-178350
- Filing Date
  2009-07-30
- Data Source
  KAKENHI-PROJECT-21651069
[Presentation] 局所液相成長法によって作製した単結晶GeSn細線の受光・発光特性2022
- Author(s)
  志村考功, 細井卓治, 小林拓真, 渡部平司
- Organizer
  レーザー学会学術講演会第42回年次大会
- Invited
- Data Source
  KAKENHI-PROJECT-20H02620
[Presentation] Fabrication and Luminescence Characterization of Uniaxial Tensile-strained Ge Wires using Internal Stress in Metal Thin Films2022
- Author(s)
  T. Shimura, S. Tanaka, H. Watanabe, T. Hosoi
- Organizer
  The 19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP19)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02620
[Presentation] Fabrication of Tensile-strained Single-crystalline GeSn Wires on Amorphous Quartz Substrates by Local Liquid-phase Crystallization2022
- Author(s)
  T. Shimura, H. Oka, T. Hosoi, Y. Imai, S. Kimura, and H. Watanabe
- Organizer
  The 8th International Symposium on Advanced Science and Technology of Silicon Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02620
[Presentation] Controllability of Luminescence Wavelength from GeSn Wires Fabricated by Laser Zone Melting on Quartz Substrates2022
- Author(s)
  T. Shimura, R. Yamaguchi, N. Tabuchi, M. Kondo, M. Kuniyoshi, T. Hosoi, T. Kobayashi, H. Watanabe
- Organizer
  2022 International Conference on Solid State Devices and Materials(SSDM 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02620
[Presentation] 光吸収層を有する石英基板上GeSn細線のレーザー溶融結晶化2022
- Author(s)
  田淵直人, 山口凌雅, 近藤雅斗, 國吉望月, 細井卓治, 小林拓真, 志村考功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第27回研究会）
- Data Source
  KAKENHI-PROJECT-20H02620
[Presentation] 石英基板上GeSn細線のレーザー溶融結晶化における光吸収層の検討2021
- Author(s)
  田淵直人, 國吉望月, 細井卓治, 小林拓真, 志村考功, 渡部平司
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02620
[Presentation] レーザー溶融結晶化による石英基板上単結晶GeSn作製技術の高度化2021
- Author(s)
  國吉望月, 田淵直人, 細井卓治, 志村考功, 渡部平司
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02620
[Presentation] レーザー溶融結晶化による石英基板上引張歪み単結晶GeSnアレイの作製2018
- Author(s)
  岡博史, 黒木伸一郎, 細井卓治, 志村考功, 渡部平司
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] レーザー溶融結晶化による石英基板上引張歪み単結晶GeSnアレイの作製2018
- Author(s)
  岡博史, 黒木伸一郎, 細井卓治, 志村考功, 渡部平司
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 裏面照射型近赤外イメージセンサーに向けた基板上単結晶GeSnフォトダイオードアレイの開発2018
- Author(s)
  岡博史, 井上慶太郎, Thi Thuy Nguyen, 黒木伸一郎, 細井卓治, 志村考功, 渡部平司
- Organizer
  映像情報メディア学会情報センシング研究会
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 横方向液相エピタキシャル成長により作製した引張歪み高濃度n型Ge細線の低温発光特性と共振器の形成2018
- Author(s)
  冨田崇史, 岡博史, 井上慶太郎, 細井卓治, 志村考功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第23回研究会）
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] 裏面照射型石英基板上GeSnフォトダイオードの近赤外受光特性評価2018
- Author(s)
  岡博史, 細井卓治, 志村考功, 渡部平司
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] High-mobility TFT and enhanced luminescence utilizing ucleation-controlled GeSn growth on transparent substrate for monolithic optoelectronic2018
- Author(s)
  H. Oka, M. Koyama, T. Tomita, T. Amamoto, K. Tominaga, S. Tanaka, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  関西コロキアム電子デバイスワークショップ
- Invited
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 石英基板上単結晶GeSn層形成と光電子デバイス応用2018
- Author(s)
  細井卓治, 岡博史, 井上慶太郎, 志村考功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 横方向液相エピタキシャル成長により作製した引張歪み高濃度n型Ge細線の低温発光特性と共振器の形成2018
- Author(s)
  冨田崇史, 岡博史, 井上慶太郎, 細井卓治, 志村考功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 裏面照射型石英基板上GeSnフォトダイオードの近赤外受光特性評価2018
- Author(s)
  岡博史, 細井卓治, 志村考功, 渡部平司
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 石英基板上単結晶GeSn層形成と光電子デバイス応用2018
- Author(s)
  細井卓治, 岡博史, 井上慶太郎, 志村考功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第23回研究会）
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] Single-Crystalline GeSn Formation on Transparent Substrate and its Optoelectronic Applications2017
- Author(s)
  T. Hosoi
- Organizer
  The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] 横方向液相エピタキシャル成長による高濃度Sbドープ単結晶Ge細線の作製と光学特性評価2017
- Author(s)
  冨田崇史, 岡博史, 小山真広, 田中章吾, 細井卓治, 志村考功, 渡部平司
- Organizer
  応用物理学会　薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」
- Place of Presentation
  東レ研修センター, 静岡県三島市
- Year and Date
  2017-01-19
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Single-crystalline GeSn formation on transparent substrate and its optoelectronic applications2017
- Author(s)
  T. Hosoi
- Organizer
  The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 横方向液相成長により作製したSb ドープ単結晶GeSn n チャネルTFT2017
- Author(s)
  岡博史, 冨田崇史, 細井卓治, 志村考功, 渡部平司
- Organizer
  第64回応用物理学関係連合講演会
- Place of Presentation
  パシフィコ横浜, 神奈川県横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 横方向液相成長によって作製した引張歪み高濃度n 型Ge 細線の光学特性評価2017
- Author(s)
  冨田崇史，岡博史，小山真広，田中章吾，細井卓治，志村考功，渡部平司
- Organizer
  2017年春季第64回応用物理学関係連合講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] 横方向液相成長により作製したSb ドープ単結晶GeSn n チャネルTFT2017
- Author(s)
  岡博史, 冨田崇史, 細井卓治, 志村考功, 渡部平司
- Organizer
  2017年春季第64回応用物理学関係連合講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] 透明基板上単結晶GeSn n+/p接合フォトダイオードの作製と評価2017
- Author(s)
  岡　博史、井上慶太、冨田崇史、和田裕希、細井卓治、志村考功、渡部平司
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] シードレス液相成長による単結晶GeSn超薄膜形成と電気特性評価2017
- Author(s)
  小山真広, 岡博史, 田中章吾, 冨田崇史, 細井卓治, 志村考功, 渡部平司
- Organizer
  応用物理学会　薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」
- Place of Presentation
  東レ研修センター, 静岡県三島市
- Year and Date
  2017-01-19
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 透明基板上単結晶GeSn n+/p接合フォトダイオードの作製と評価2017
- Author(s)
  岡博史、井上慶太、冨田崇史、和田裕希、細井卓治、志村考功、渡部平司
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] Back-side Illuminated GeSn Photodiode Array on Quartz Substrate Fabricated by Laser-induced Liquid-phase Crystallization for Monolithically-integrated NIR Imager Chip2017
- Author(s)
  H. Oka, K. Inoue, T. T. Nguyen, S. Kuroki, T. Hosoi, T. Shimura, H. Watanabe
- Organizer
  63rd IEEE International Electron Devices Meeting (2017 IEDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] Enhancement-mode n-channel TFT and room-temperature near-infrared emission based on n+/p junction in single-crystalline GeSn on transparent substrate2017
- Author(s)
  H. Oka, M. Koyama, T. Hosoi, T. Shimura and H. Watanabe
- Organizer
  Symposium on VLSI Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Back-side illuminated GeSn photodiode array on quartz substrate fabricated by laser-induced liquid-phase crystallization for monolithically-integrated NIR imager chip2017
- Author(s)
  H. Oka, K. Inoue, T. T. Nguyen, S. Kuroki, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  IEEE International Electron Devices Meeting (2017 IEDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Enhancement-Mode N-Channel TFT and Room-Temperature Near-Infrared Emission Based on n+/p Junction in Single-Crystalline GeSn on Transparent Substrate2017
- Author(s)
  H. Oka, M. Koyama, T. Hosoi, T. Shimura and H. Watanabe
- Organizer
  2017 Symposium on VLSI Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] High-mobility GeSn p-MOSFETs on Transparent Substrate Utilizing Nucleation-controlled Liquid-phase Crystallization2016
- Author(s)
  H. Oka, T. Amamoto, T. Hosoi, T. Shimura, H. Watanabe
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  Honolulu, HI, USA
- Year and Date
  2016-06-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] マイクロフォーカスX線源と振幅格子を用いたX線位相イメージングの検討2016
- Author(s)
  細野凌, 森本直樹, 伊藤康浩, 山崎周, 佐野壱成, 土岐貴弘, 佐野哲, 細井卓治, 渡部平司, 志村考功
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京都目黒区
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13408
[Presentation] High-mobility TFT and Enhanced Luminescence Utilizing Nucleation-controlled GeSn Growth on Transparent substrate for Monolithic Optoelectronic Integration2016
- Author(s)
  H. Oka, M. Koyama, T. Tomita, T. Amamoto, K. Tominaga, S. Tanaka, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  IEEE International Electron Devices Meeting
- Place of Presentation
  San Francisco
- Year and Date
  2016-12-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] Photoluminescence from n-type tensile-strained Ge and GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy2016
- Author(s)
  T. Shimura, M. Matsue, K. Tominaga, K. Kajimuira, T. Amamoto, T. Hosoi, and H. Watanabe
- Organizer
  The 7th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, HI, USA
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] SbドープアモルファスGeの局所溶融横方向液相エピタキシャル成長によるn型Ge細線の作製と評価2016
- Author(s)
  冨田崇史, 岡博史, 小山真広, 田中章吾, 細井卓治, 志村考功, 渡部平司
- Organizer
  第77回応用物理学関係連合講演会
- Place of Presentation
  朱鷺メッセ, 新潟県新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Photoluminescence from n-type tensile-strained Ge and GeSn wires on an insulator fabricated by lateral liquid-phase epitaxy2016
- Author(s)
  T. Shimura, M. Matsue, K. Tominaga, K. Kajimuira, T. Amamoto, T. Hosoi, and H. Watanabe
- Organizer
  The 7th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, Hawaii
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] SbドープアモルファスGeの局所溶融横方向液相エピタキシャル成長によるn型Ge細線の作製と評価2016
- Author(s)
  冨田崇史, 岡博史, 小山真広, 田中章吾, 細井卓治, 志村考功, 渡部平司
- Organizer
  2016年秋季第77回応用物理学関係連合講演会
- Place of Presentation
  新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] 光電子集積回路に向けたGeデバイス技術2015
- Author(s)
  細井卓治
- Organizer
  応用物理学会関西支部　支部セミナー「フォトニック信号処理セミナー」
- Place of Presentation
  大阪大学
- Year and Date
  2015-03-11
- Invited
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Cathodoluminescence study of SiO2/4H-SiC structures treated with high-temperature post-oxidation annealing2015
- Author(s)
  A. Chanthaphan, Y. Fukushima, K. Yamamoto, M. Aketa, H. Asahara, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  16th International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Giardini Naxos, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13951
[Presentation] Fabrication of High-quality Ge-on-insulator Structures by Lateral Liquid Phase Epitaxy2015
- Author(s)
  T. Shimura, Y. Suzuki, M. Matsue, K. Kajimura, K. Tominaga, T. Amamoto, T. Hosoi, and H. Watanabe
- Organizer
  The 228th ECS Meeting
- Place of Presentation
  Phoenix, Arizona, USA
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Fabrication of High-quality Ge-on-insulator Structures by Lateral Liquid Phase Epitaxy2015
- Author(s)
  T. Shimura, Y. Suzuki, M. Matsue, K. Kajimura, K. Tominaga, T. Amamoto, T. Hosoi, and H. Watanabe
- Organizer
  The 228th ECS Meeting
- Place of Presentation
  Phoenix, Arizona, USA
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03975
[Presentation] Schottky barrier height modulation at NiGe/Ge interface by phosphorous ion implantation and its application to Ge-based CMOS devices2015
- Author(s)
  T. Hosoi, H. Oka, Y. Minoura, T. Shimura, and H. Watanabe
- Organizer
  The 15th International Workshop on Junction Technology
- Place of Presentation
  Kyoto University Kihada Hall (Uji Campus), Kyoto
- Year and Date
  2015-06-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Engineering of NiGe/Ge Junction by P Ion Implantation after Germanidation for Metal S/D Ge CMOS Technology2015
- Author(s)
  H. Oka, Y. Minoura, R. Asahara, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  第15回関西コロキアム電子デバイスワークショップ
- Place of Presentation
  大阪府大阪市
- Year and Date
  2015-12-15
- Invited
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 横方向液相成長法による石英基板上単結晶GeSn細線の作製と光学特性評価2015
- Author(s)
  天本隆史, 冨永幸平, 田中章吾, 細井卓治, 志村考功, 渡部平司
- Organizer
  第76回応用物理学関係連合講演会
- Place of Presentation
  愛知県名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 横方向液相成長によって作製したGeSn-on-insulator構造のバンドギャップ変調評価2014
- Author(s)
  4.冨永幸平，松江将博，細井卓治，志村考功，渡部平司
- Organizer
  2014年春季第61回応用物理学関係連合講演会
- Place of Presentation
  神奈川県相模原市
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] 極薄EOT high-k/Geゲートスタックの熱安定性及び界面特性改善に向けたプロセス設計2014
- Author(s)
  淺原亮平, 細井卓治, 志村考功, 渡部平司
- Organizer
  電子情報通信学会シリコン材料・デバイス(SDM)研究会
- Place of Presentation
  名古屋大学
- Year and Date
  2014-06-19
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 横方向液相成長法により作製したn型Ge-on-insulator層の直接遷移発光の増強2014
- Author(s)
  梶村恵子，松江将博，細井卓治，志村考功，渡部平司
- Organizer
  2014年春季第61回応用物理学関係連合講演会
- Place of Presentation
  神奈川県相模原市
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] 横方向液相エピタキシャル成長法によりY2O3層上に形成した局所GOI層の電気特性評価2014
- Author(s)
  梶村恵子，松江将博，細井卓治，志村考功，渡部平司
- Organizer
  2014年春季第61回応用物理学関係連合講演会
- Place of Presentation
  神奈川県相模原市
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] 横方向液相成長法で作製した局所GeSn-on-insulator層の優先結晶方位2014
- Author(s)
  3.冨永幸平，松江将博，細井卓治，志村考功，渡部平司
- Organizer
  2014年春季第61回応用物理学関係連合講演会
- Place of Presentation
  神奈川県相模原市
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] 横方向液相エピタキシャル成長によって作製したGeワイヤのフォトルミネッセンス測定によるバンドギャップ変調評価2014
- Author(s)
  梶村恵子, 松江将博, 安武裕輔, 深津晋, 細井卓治, 志村考功, 渡部平司
- Organizer
  ゲートスタック研究会　―材料・プロセス・評価の物理―」(第１９回研究会）
- Place of Presentation
  静岡県熱海市
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] High-k/Ge Gate Stack with an EOT of 0.56 nm by Controlling Interface Reaction Using Ultrathin AlOx Interlayer2013
- Author(s)
  T. Hosoi, I. Hideshima, R. Tanaka, Y. Minoura, A. Yoshigoe, Y. Teraoka, T. Shimura, and H. Watanabe
- Organizer
  The 44th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Arlington, USA
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Effective Hole Mobility of GOI MOSFET Fabricated by Lateral Liquid-Phase Epitaxiay2013
- Author(s)
  T. Hosoi, Y. Suzuki, H. Nishikawa, M. Matsue, T. Shimura, and H. Watanabe
- Organizer
  2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Phosphorous Ion Implantation into NiGe Layer for Ohmic Contact Formation on n-Ge2013
- Author(s)
  Y. Minoura, T. Hosoi, J. Matsugaki, S. Kuroki, T. Shimura, and H. Watanabe
- Organizer
  2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Effective Hole Mobility of GOI MOSFET Fabricated by Lateral Liquid-Phase Epitaxiay2013
- Author(s)
  T. Hosoi, Y. Suzuki, H. Nishikawa, M. Matsue, T. Shimura, and H. Watanabe
- Organizer
  2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF2013),
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] Enhanced direct bandgap photoluminescence from local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy - Material and strain engineering toward CMOS compatible group-IV photonics -2013
- Author(s)
  M. Matsue, Y. Yasutake, S. Fukatsu, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  The 44th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Arlington, USA
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Enhanced direct bandgap photoluminescence from local Ge-on-insulator structures fabricated by lateral liquid-phase epitaxy -Material and strain engineering toward CMOS compatible group-IV photonics-2013
- Author(s)
  M. Matsue, Y. Yasutake, S. Fukatsu, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  The 44th IEEE Semiconductor Interface Specialists Conference (SISC)
- Place of Presentation
  Arlington, VA, USA
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties2013
- Author(s)
  T. Hosoi, I. Hideshima, R. Tanaka, Y. Minoura, A. Yoshigoe, Y. Teraoka, T. Shimura, and H. Watanabe
- Organizer
  The 18th Conference of Insulating Films on Semiconductors
- Place of Presentation
  Cracow, Poland
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 横方向液相成長によって作製したGOI構造のフォトルミネッセンス測定2013
- Author(s)
  松江将博，安武裕輔，深津晋，細井卓治，志村考功，渡部平司
- Organizer
  2013年秋季第74回応用物理学関係連合講演会
- Place of Presentation
  京都府田辺市
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] 犠牲酸化処理が熱酸化Si02/4H-S iC(0001)構造に及ぼす影響2013
- Author(s)
  細井卓治
- Organizer
  第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] Mobile Ions Generated in Thermal Sio_2 on SiC by Hydrogen Passivation and Its Impact on Interface Property2012
- Author(s)
  細井卓治
- Organizer
  43rd IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  サンディエゴ(米国)
- Year and Date
  2012-12-06
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] 横方向液相エピタキシャル成長により作製した単結晶GOI構造の電気特性評価2012
- Author(s)
  鈴木雄一朗, 荻原伸平, 細井卓治, 志村考功, 渡部平司
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-」(第17回研究会)
- Place of Presentation
  静岡県三島市
- Year and Date
  2012-01-20
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] 急速加熱処理によるGe1-xSnx層の低温エピタキシャル成長2012
- Author(s)
  荻原伸平, 片岡伸文, 鈴木雄一朗, 細井卓治, 志村考功, 渡部平司
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] 急速加熱処理によるGe_<1-x>Sn_x層の低温エピタキシャル成長2012
- Author(s)
  荻原伸平, 片岡伸文, 鈴木雄一朗, 細井卓治, 志村考功, 渡部平司
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京都新宿区
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製2011
- Author(s)
  荻原伸平, 鈴木雄一朗, 吉本千秋, 細井卓治, 志村考功, 渡部平司
- Organizer
  第16回ゲートスタック研究会
- Place of Presentation
  東京
- Year and Date
  2011-01-22
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] High-mobility Ge-on-insulator p-channel MOSFETs fabricated by lateral liquid-phase epitaxy2011
- Author(s)
  Y. Suzuki, S. Ogiwara, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  42nd IEEE Semiconductor Interface Specialists Conf.
- Place of Presentation
  Arlington, VA, USA
- Year and Date
  2011-12-01
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] High-mobility Ge-on-insulator p-channel MOSFETs fabricated by lateral liquid-phase epitaxy2011
- Author(s)
  Y.Suzuki, S.Ogiwara, T.Hosoi, T.Shimura, H.Watanabe
- Organizer
  42nd IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Arlington, USA
- Year and Date
  2011-12-01
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] 横方向液相エピタキシャル成長により作製した局所GOI構造の電気特性評価2011
- Author(s)
  鈴木雄一朗, 荻原伸平, 細井卓治, 志村考功, 渡部平司
- Organizer
  第72回応用物理学関係連合講演会
- Place of Presentation
  山形県山形市
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製2011
- Author(s)
  荻原伸平、鈴木雄一朗、吉本千秋、細井卓治, 志村考功, 渡部平司
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-第16回研究会
- Place of Presentation
  東京工業大学
- Year and Date
  2011-01-22
- Data Source
  KAKENHI-PROJECT-21760009
[Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製2011
- Author(s)
  荻原伸平、細井卓治, 他4名
- Organizer
  ゲートスタック研究会第16回研究集会
- Place of Presentation
  東京工業大学(東京都目黒区)
- Year and Date
  2011-01-22
- Data Source
  KAKENHI-PROJECT-21760009
[Presentation] High-quality Single-crystal SiGe Layers on Insulator Formed by Rapid Melt Growth2011
- Author(s)
  S. Ogiwara, Y. Suzuki, C. Yoshimoto, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  International Meeting for Future of Electron Devices, Kansai Osaka. Japan
- Place of Presentation
  Osaka, Japan
- Year and Date
  2011-05-19
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] High-Quality Single-Crystalline Ge-on-Insulator P-Channel MOSFETs Formed by Lateral Liquid-Phase Epitaxy2011
- Author(s)
  T.Suzuki, S.Ogiwara, T.Hosoi, T.Shimura, H.Watanabe
- Organizer
  Fourth International Symposium on Atomically Controlled Fabrication Technology
- Place of Presentation
  Osaka, Japan
- Year and Date
  2011-11-25
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] 横方向液相エピタキシャル成長により作製した局所GOI構造の電気特性評価2011
- Author(s)
  鈴木雄一朗, 荻原伸平, 細井卓治, 志村考功, 渡部平司
- Organizer
  第72回応用物理学関係連合講演会
- Place of Presentation
  山形市
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] High-quality Single-crystal SiGe Layers on Insulator Formed by Rapid Melt Growth2011
- Author(s)
  S.Ogiwara, Y.Suzuki, C.Yoshimoto, T.Hosoi, T.Shimura, H.Watanabe
- Organizer
  2011 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka, Japan
- Year and Date
  2011-05-19
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] Fabrication of High-quality GOI and SGOI Structures by Rapid Melt Growth Method2011
- Author(s)
  H.Watanabe, C.Yoshimoto, T.Hashimoto, S.Ogiwara, Y.Suzuki, T.Hosoi, T.Shimura
- Organizer
  Fourth International Symposium on Atomically Controlled Fabrication Technology
- Place of Presentation
  Osaka, Japan
- Year and Date
  2011-11-26
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method2011
- Author(s)
  H. Watanabe, C. Yoshimoto, T. Hashimoto, S. Ogiwara, T. Hosoi, and T. Shimura
- Organizer
  The 19th Int. Workshop on Active-Matrix Flatpanel Displays and Device
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2011-07-06
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製2010
- Author(s)
  荻原伸平、吉本千秋、細井卓治、志村考功、渡部平司
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21760009
[Presentation] 急速加熱液相エピタキシャル成長法により作製したSGOI構造のGe濃度のアニール温度依存性2010
- Author(s)
  荻原伸平、鈴木雄一朗、吉本千秋、細井卓治、志村考功、渡部平司
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21760009
[Presentation] 自律型自己組織化液体ナノプロセスの開発2010
- Author(s)
  是津信行, 松浦晋, 渡邊暁, 細井卓治, 山村和也
- Organizer
  2010年度精密工学会秋季大会学術講演会
- Place of Presentation
  名古屋,日本
- Year and Date
  2010-09-27
- Data Source
  KAKENHI-PROJECT-21651069
[Presentation] 急速加熱液相エピタキシャル成長法により作製したSGOI構造のGe濃度のアニール温度依存性2010
- Author(s)
  荻原伸平, 吉本千秋, 細井卓治, 志村考功, 渡部平司
- Place of Presentation
  長崎市、長崎
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] 急速加熱液相エピタキシャル成長法により作製したSGOI構造のGe濃度のアニール温度依存性2010
- Author(s)
  荻原伸平、細井卓治, 他4名
- Organizer
  第71回応用物理学関係連合講演会
- Place of Presentation
  長崎大学(長崎県長崎市)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21760009
[Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製2010
- Author(s)
  荻原伸平、細井卓治, 他3名
- Organizer
  第71回応用物理学関係連合講演会
- Place of Presentation
  長崎大学(長崎県長崎市)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21760009
[Presentation] Fabrication of Shape Controlled Metal Nanodot Arrays by Autonomous Liquid-phase Nanoscale Processing as well as Their Charge Injection2010
- Author(s)
  N.Zettsu, S.Matsuura, A.Watanabe, K.Yamamura T.Hosoi, H.Watanabe
- Organizer
  Third International Symposium on Atomically Controlled Fabrication Technology
- Place of Presentation
  Osaka, JAPAN
- Year and Date
  2010-11-24
- Data Source
  KAKENHI-PROJECT-21651069
[Presentation] 自律型液体ナノプロセスを用いたメタルナノドットの高密度集積化と高機能性フローティングナノドットメモリの開発2010
- Author(s)
  松浦晋, 渡辺暁, 細井卓治, 渡部平司, 山村和也, 是津信行
- Organizer
  2010年秋季応用物理学会学術講演会
- Place of Presentation
  長崎,日本
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21651069
[Presentation] 急速加熱液相エピタキシャル成長法による高Ge濃度SGOI構造の作製2010
- Author(s)
  荻原伸平, 吉本千秋, 細井卓治, 志村考功, 渡部平司
- Place of Presentation
  長崎市、長崎
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] Autonomous liquid-phase nanoscale processing for the large-area fabrication of nanoparticle-based parallel device arrays2010
- Author(s)
  N.Zettsu, S.Matsuura, A.Watanabe, K.Yamamura, T.Hosoi, H.Watanabe
- Organizer
  2010 MRS Fall Meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2010-12-02
- Data Source
  KAKENHI-PROJECT-21651069
[Presentation] Fabrication of Non-volatile Au Nanoparticle Memory by Precisely Controlled Colloidal Self-Assembly2009
- Author(s)
  S.Saito, S.Matsuura, T.Hosoi, H.Watanabe, N.Zettsu
- Organizer
  第19回日本MRS学術シンポジウム
- Place of Presentation
  横浜市開港記念会館、横浜市
- Year and Date
  2009-12-07
- Data Source
  KAKENHI-PROJECT-21651069
[Presentation] Fabrication of Single-Crystal Local Germanium-on-Insulator Structures by Lateral Liquid-Phase Epitaxy2009
- Author(s)
  Tatsuya Hashimoto, Chiaki Yoshimoto, Takuji Hosoi
- Organizer
  2009 Material Research Society Fall Meeting
- Place of Presentation
  Boston, USA.
- Year and Date
  2009-11-30
- Data Source
  KAKENHI-PROJECT-21760009
[Presentation] 液体ナノプロセスによる金属ナノドットアレイ作製技術の開発2009
- Author(s)
  斉藤正太, 細井卓治, 渡部平司, 是津信行
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-21651069
[Presentation] Fabrication of Single-Crystal Local Germanium-on-Insulator Structures by Lateral Liquid-Phase Epitaxy2009
- Author(s)
  T. Hashimoto, C. Yoshimoto, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  MRS fall meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2009-11-30
- Data Source
  KAKENHI-PROJECT-21360149
[Presentation] Non-volatile Au Nanoparticle Memory Applications Enabled by Preciously Controlled Colloidal Self-assembly2009
- Author(s)
  S.Uchida, S.Saitoh, T.Hosoi, H.Watanabe, N.Zettsu
- Organizer
  2009 MRS Spring Meeting
- Place of Presentation
  Hynes Convention Center, San Francisco, CA, USA
- Year and Date
  2009-04-13
- Data Source
  KAKENHI-PROJECT-21651069
[Presentation] Fabrication of Ge Nano-Wires on Insulators Using Lateral Liquid-Phase Epitaxy2009
- Author(s)
  Chiaki Yoshimoto, Tatsuya Hashimoto, Takuji Hosoi
- Organizer
  5th Handai Nanoscience and Nanotechnology International Symposium
- Place of Presentation
  Osaka University, JAPAN.
- Year and Date
  2009-09-01
- Data Source
  KAKENHI-PROJECT-21760009
[Presentation] Non-volatile memory applications in a 12nm-sized Au nanoparticle array fabricated by precisely controlled colloidal self-assembly2009
- Author(s)
  S.Saito, T.Hosoi, H.Watanabe, N.Zettsu
- Organizer
  Second International Symposium on Atomically Controlled Fabrication Technology
- Place of Presentation
  Nakanoshima center, Osaka
- Year and Date
  2009-11-25
- Data Source
  KAKENHI-PROJECT-21651069
[Presentation] 先進パワーデバイスにおける新規ゲート絶縁膜開発
- Author(s)
  渡部平司, 細井卓治
- Organizer
  第62回応用物理学関係連合講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Invited
- Data Source
  KAKENHI-PROJECT-25630124
[Presentation] Fabrication of GeSn-on-insulator Structure by Utilizing Lateral Liquid-Phase Epitaxy
- Author(s)
  T. Hosoi, K. Kajimura, K. Tominaga, T. Shimura, and H. Watanabe
- Organizer
  The 45th IEEE Semiconductor Interface Specialists Conference (SISC)
- Place of Presentation
  San Diego, CA, USA
- Year and Date
  2014-12-10 – 2014-12-13
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] Fabrication of GeSn-on-insulator Structure by Utilizing Lateral Liquid-Phase Epitaxy
- Author(s)
  T. Hosoi, K. Kajimura, K. Tominaga, T. Shimura, and H. Watanabe
- Organizer
  IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  San Diego, CA, USA
- Year and Date
  2014-12-10 – 2014-12-13
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] カソードルミネッセンス法による熱酸化SiO2/SiC界面欠陥の検出
- Author(s)
  福島悠太、アランフルカン、樋口直樹、チャンタパンアタウット、細井卓治、志村考功、渡部平司
- Organizer
  先進パワー半導体分科会第１回講演会
- Place of Presentation
  愛知県産業労働センターウインクあいち（愛知県名古屋市）
- Year and Date
  2014-11-19 – 2014-11-20
- Data Source
  KAKENHI-PROJECT-25630124
[Presentation] NOアニールを施したSiC MOSデバイスのフラットバンド電圧安定性
- Author(s)
  勝義仁, 細井卓治, 南園悠一郎, 木本恒暢, 志村考功, 渡部平司
- Organizer
  第62回応用物理学関係連合講演会
- Place of Presentation
  東海大学、平塚市
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] 横方向液相エピタキシャル成長によって作製した絶縁体上GeSnワイヤのフォトルミネッセンス測定によるバンドギャップ変調技術
- Author(s)
  天本隆史, 冨永幸平, 梶村恵子, 松江将博, 細井卓治, 志村孝功, 渡部平司
- Organizer
  応用物理学会　薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会」
- Place of Presentation
  東レ研修センター, 静岡県三島市
- Year and Date
  2015-01-29 – 2015-01-31
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 急速加熱処理により作製したGeSn-on-quartz構造のフォトルミネッセンス測定
- Author(s)
  天本隆史, 冨永幸平, 梶村恵子, 細井卓治, 志村考功, 渡部平司
- Organizer
  第62回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Understanding of Bias-Temperature Instability due to Mobile Ions in SiC Metal-Oxide-Semiconductor Devices
- Author(s)
  チャンタパンアタウット, 中野佑紀, 中村孝, 細井卓治, 志村考功, 渡部平司
- Organizer
  「ゲートスタック研究会　―材料・プロセス・評価の物理―」(第２０回研究会)
- Place of Presentation
  東レ研修センター、三島市
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] カソードルミネッセンス法による熱酸化SiO2/SiC界面欠陥の検出
- Author(s)
  福島悠太, チャンタパンアタウット, 永井大介, 細井卓治, 志村考功, 渡部平司
- Organizer
  第62回応用物理学関係連合講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25630124
[Presentation] Synchrotron radiation photoemission spectroscopy study of SiO2/4H-SiC(0001) interfaces with NO annealing
- Author(s)
  細井卓治, 南園悠一郎, 木本恒暢, 吉越章隆, 寺岡有殿, 志村考功, 渡部平司
- Organizer
  10th European Conference on Silicon Carbide & Related Materials (ECSCRM-2014)
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] 横方向液相エピタキシャル成長法により形成したGeSn-on-insulator層の電気特性評価
- Author(s)
  梶村恵子，細井卓治，志村考功，渡部平司
- Organizer
  第75回応用物理学関係連合講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] Schottky Barrier Height Reduction of NiGe/Ge Junction by P Ion Implantation for Metal Source/Drain Ge CMOS Devices
- Author(s)
  H. Oka, Y. Minoura, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Ryukoku University Avanti Kyoto Hall, Kyoto
- Year and Date
  2014-06-19 – 2014-06-20
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 4H-SiC(0001)面の熱酸化における酸化種と酸化速度の関係
- Author(s)
  永井大介, 福島悠太, 勝義仁, 細井卓治, 志村考功, 渡部平司
- Organizer
  先進パワー半導体分科会第１回講演会
- Place of Presentation
  愛知県産業労働センター、名古屋市
- Year and Date
  2014-11-19 – 2014-11-20
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] Diffusivity of Mobile Ions Inherent to Thermal SiO2/SiC Structures in Deposited SiO2 Gate Dielectrics
- Author(s)
  チャンタパン　アタウット、中野佑紀、中村孝、細井卓治、志村考功、渡部平司
- Organizer
  第74回応用物理学関係連合講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] 横方向液相エピタキシャル成長法により形成したGeSn-on-insulator層の電気特性評価
- Author(s)
  梶村恵子，細井卓治，志村考功，渡部平司
- Organizer
  第75回応用物理学関係連合講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] 横方向液相成長法で作製したSi基板上GeSn細線の初期結晶方位とその安定性
- Author(s)
  冨永幸平，梶村恵子，天本隆史，細井卓治，志村考功，渡部平司
- Organizer
  第75回応用物理学関係連合講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 急速加熱処理により作製したGeSn-on-quartz構造のフォトルミネッセンス測定
- Author(s)
  天本隆史, 冨永幸平, 梶村恵子, 細井卓治, 志村考功, 渡部平司
- Organizer
  第62回応用物理学関係連合講演会
- Place of Presentation
  東海大学（神奈川県）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] 横方向液相成長法で作製したSi基板上GeSn細線の初期結晶方位とその安定性
- Author(s)
  冨永幸平，梶村恵子，天本隆史，細井卓治，志村考功，渡部平司
- Organizer
  第75回応用物理学関係連合講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360120
[Presentation] Sub-1-nm EOT Schottky Source/Drain Germanium CMOS Technology with Low-temperature Self-aligned NiGe/Ge Junctions
- Author(s)
  T. Hosoi, Y. Minoura, R. Asahara, H. Oka, T. Shimura, and H. Watanabe
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  Honolulu, HI, USA
- Year and Date
  2014-06-08 – 2014-06-09
- Data Source
  KAKENHI-PROJECT-25246028
[Presentation] 4H-SiC(0001)面のウェット酸化における水分子の役割
- Author(s)
  永井大介, 細井卓治, 志村考功, 渡部平司
- Organizer
  第75回応用物理学関係連合講演会
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] Electrical and physical properties of SiO2 gate dielectrics grown on 4H-SiC
- Author(s)
  細井　卓治、上西　悠介、チャンタパン　アタウット、池口　大輔、中野　佑紀、中村　孝、志村　考功、渡部　平司
- Organizer
  The 8th international conference on advanced materials upon the proven concept and continues the tradition of its seven predecessors (THERMEC2013)
- Place of Presentation
  Las Vegas, NV, USA
- Invited
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] カソードルミネッセンス法による熱酸化 SiO2 /SiC 構造の評価
- Author(s)
  福島悠太，Furkan Alan，樋口直樹，Atthawut Chanthaphan，細井卓治，志村考功，渡部平司
- Organizer
  第75回応用物理学関係連合講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25630124
[Presentation] AlON/SiO2積層ゲート絶縁膜によるSiC MOSデバイスのBTI特性改善
- Author(s)
  チャンタパン　アタウット、中野佑紀、中村孝、細井卓治、志村考功、渡部平司
- Organizer
  SiC及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館
- Data Source
  KAKENHI-PROJECT-24686008
[Presentation] Engineering of NiGe/Ge Junction by P Ion Implantation after Germanidation for Metal S/D Ge CMOS Technology
- Author(s)
  H. Oka, Y. Minoura, R. Asahara, T. Hosoi, T. Shimura, and H. Watanabe
- Organizer
  IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  San Diego, CA, USA
- Year and Date
  2014-12-10 – 2014-12-13
- Data Source
  KAKENHI-PROJECT-25246028

1. WATANABE Heiji (90379115)

# of Collaborated Projects: 8 results

# of Collaborated Products: 108 results
2. SHIMURA Takayoshi (90252600)

# of Collaborated Projects: 8 results

# of Collaborated Products: 0 results
3. 是津信行 (10432519)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
4. YASUTAKE Yuhsuke

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
5. 志村孝功

# of Collaborated Projects: 0 results

# of Collaborated Products: 102 results
6. CHANTHAPHAN Atthawut

# of Collaborated Projects: 0 results

# of Collaborated Products: 9 results
7. 國吉望月

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
8. 吉越章隆

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
9. 寺岡有殿

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Hosoi Takuji 細井 卓治

細井 卓治 ホソイ タクジ

HOSOI TAKUJI 細井 卓治

HOSOI Takuji 細井 卓治

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Development of Ideal SiO2/SIC interface by surface-and-reaction-controlled thermal oxidationPrincipal Investigator

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Development of GeSn-based NIR sensing devicesPrincipal Investigator

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Development of SiC-based plasmonic transistors with Schottky source/drainPrincipal Investigator

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Selective formation of germanium-on-insulator structures based on liquid phase epitaxy by laser annealingPrincipal Investigator

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[Journal Article] Fabrication and Luminescence Characterization of Ge Wires with Uniaxial Tensile Strains Applied using Internal Stresses in Deposited Metal Thin Films2023

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[Journal Article] Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates2023

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Hosoi Takuji 細井卓治

細井卓治ホソイタクジ

HOSOI TAKUJI 細井卓治

HOSOI Takuji 細井卓治