Nishinaga Jiro 西永慈郎

… Alternative Names

NISHINAGA Jiro 西永慈郎

Less

Researcher Number	90454058
Other IDs
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 主任研究員
Affiliation (based on the past Project Information) *help	2020 – 2024: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 主任研究員 2015 – 2016: 国立研究開発法人産業技術総合研究所, 太陽光発電研究センター, 研究員 2014: 独立行政法人産業技術総合研究所, 太陽光発電研究センター, 研究員 2014: 早稲田大学, 理工学術院, 准教授 2013: 早稲田大学, 付置研究所, 准教授 … More 2012 – 2013: 早稲田大学, 高等研究所, 准教授 2010 – 2011: Waseda University, 高等研究所, 助教 2008 – 2009: 早稲田大学, 理工学術院, 助教 2008: Waseda University, 理工学術院, 助手 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 30010:Crystal engineering-related Except Principal Investigator Electronic materials/Electric materials / Basic Section 15020:Experimental studies related to particle-, nuclear-, cosmic ray and astro-physics / Nanomaterials engineering
Keywords	Principal Investigator MBE / 太陽電池 / 結晶成長 / 量子ドット / GaAs / フラーレン / 低温成長 / 多元系化合物半導体 / 有機・無機半導体ヘテロ界面 / MEE … More / 量子井戸 / I-III-VI2族化合物半導体 / III-V族化合物半導体 / 量子デバイス / 低温結晶成長 / ヘテロ界面 / 分子線エピタキシー / 光デバイス / 電子デバイス / 深い準位 / 光スイッチ / HEMT / 化合物半導体 / 有機半導体 / 電子トラップ / 有機・無機ヘテロ界面 / 有機半導体デバイス / ナノ表面界面 / 薄膜・量子材料 / 電気・電子材料 / RHEED … More Except Principal Investigator 半導体 / フラーレン / 重イオンビーム / 素粒子実験 / 放射線耐性 / CIGS半導体 / 半導体検出器 / 表面・界面 / ナノチューブ / シリコン空隙 / 半導体物性 / 表面・界面物性 / ナノチューブ・フラーレン / ナノ材料 / ナノ炭素物質 / ナノ界面物性 / カーボンナノチューブ / ナノ界面 / ヘテロ構造 / 結晶評価 / エピタキシャル成長 / 界面 / 表面 / 作成・評価技術 / 薄膜・量子構造 / Si/SiO2 / 解放電圧 / AlGaAs/GaAs / 励起子吸収 / タンデム太陽電池 / 超格子 / スパッタリング / Si/SiO2超格子 / AlGaAs/GaAs超格子 / 超格子太陽電池 / 分子線エピタキシー / 励起子吸収効果 / 温度安定性 / 太陽電池 / 希薄磁性半導体 / ナノチャネル / 選択エピタキシャル成長 / 高周波デバイス / 巨大磁気抵抗 / バリスティック / MEE / MBE / 弾道電子デバイス / 半導体ナノ構造 / III-V族化合物半導体 / マイグレーション・エンハンストエピタキシー(MEE) / 分子線エピタキシー(MBE) Less

Epitaxial growth of multinary compound semiconductors for new quantum systemsPrincipal Investigator
- Principal Investigator
  
  西永慈郎
- Project Period (FY)
  2024 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Development of CIGS semiconductor particle detectors with recovery mechanisms from radiation damage
- Principal Investigator
  
  外川学
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 15020:Experimental studies related to particle-, nuclear-, cosmic ray and astro-physics
- Research Institution
  High Energy Accelerator Research Organization
Epitaxial abrupt interfaces of multinary compound semiconductorsPrincipal Investigator
- Principal Investigator
  
  Nishinaga Jiro
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Electronic properties of nanoscale interfaces consisting of nanocarbon materials and inorganic semiconductors
- Principal Investigator
  
  OKADA Susumu
- Project Period (FY)
  2013 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Nanomaterials engineering
- Research Institution
  University of Tsukuba
Memory devices using heterointerfaces of fullerene and GaAsPrincipal Investigator
- Principal Investigator
  
  Nishinaga Jiro
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute of Advanced Industrial Science and Technology
  Waseda University
Development of solar cells with high stability at elevated temperatures
- Principal Investigator
  
  HORIKOSHI Yoshiji
- Project Period (FY)
  2011 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Waseda University
Crystal growth and electronic structures of fullerene / GaAs heterostructuresPrincipal Investigator
- Principal Investigator
  
  NISHINAGA Jiro
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Waseda University
Development of new devices using fullerene and GaAs heterostructures.Principal Investigator
- Principal Investigator
  
  NISHINAGA Jiro
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Waseda University
Development of new high-speed electronic devices using 1D quantum structures
- Principal Investigator
  
  HORIKOSHI , Yoshiji
- Project Period (FY)
  2005 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Waseda University

[Book] Crystal Growth: Theory, Mechanism, and Morphology2012
- Author(s)
  J. Nishinaga
- Total Pages
  27
- Publisher
  Nova Science Publishers
- Data Source
  KAKENHI-PROJECT-23760293
[Book] Molecular beam epitaxy2012
- Author(s)
  Jiro Nishinaga
- Total Pages
  19
- Publisher
  Growth and characterization of fullerene/GaAs interfaces and C60 doped GaAs and AlGaAs layers
- Data Source
  KAKENHI-PROJECT-23360163
[Book] Molecular Beam Epitaxy: From Quantum Wells to Quantum Dots, From Research to Mass Production2012
- Author(s)
  J. Nishinaga
- Publisher
  Elsevier
- Data Source
  KAKENHI-PROJECT-23760293
[Book] Molecular Beam Epitaxy2012
- Author(s)
  J. Nishinaga
- Total Pages
  20
- Publisher
  Elsevier
- Data Source
  KAKENHI-PROJECT-23760293
[Book] Growth and characterization of fullerene/GaAs interfaces and C_<60> doped GaAs and AlGaAs layers, Molecular Beam Epitaxy: From Quantum Wells to Quantum Dots, From Research to Mass Production (Editor: M. Henini)2012
- Author(s)
  J. Nishinaga
- Data Source
  KAKENHI-PROJECT-23760293
[Book] Growth and characterization of fullerene/GaAs interfaces and C_<60> doped GaAs layers, Crystal Growth: Theory, Mechanism, and Morphology (Editors: N. A. Mancuso and J. P. Isaac)2012
- Author(s)
  J. Nishinaga and Y. Horikoshi
- Data Source
  KAKENHI-PROJECT-23760293
[Book] Growth and characterization of fullerene/GaAs interfaces and C <60> doped GaAs layers, Crystal Growth : Theory, Mechanism, and Morphology (Editors : N.A.Mancuso and J.P.Isaac)2011
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Publisher
  Nova Science Publishers (printing)
- Data Source
  KAKENHI-PROJECT-20760203
[Book] Crystal Growth : Theory, Mechanism, and Morphology2011
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Total Pages
  30
- Publisher
  Nova Science Publishers
- Data Source
  KAKENHI-PROJECT-20760203
[Book] Progress in Fullerene Research2007
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Total Pages
  21
- Publisher
  Nova Science Publishers
- Data Source
  KAKENHI-PROJECT-17206031
[Book] "Epitaxial growth of undoped and multivalent impurity-doped C60 films by molecular beam epitaxy", Progress in Fullerene Research2007
- Author(s)
  J. Nishinaga and Y. Horikoshi(分担執筆)
- Publisher
  Nova Science Publishers
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Comparison of polycrystalline and epitaxial Cu(In, Ga)Se2 solar cells with conversion efficiencies of more than 21%2024
- Author(s)
  Nishinaga Jiro、Kamikawa Yukiko、Sugaya Takeyoshi、Ishizuka Shogo
- Journal Title
  
  Solar Energy Materials and Solar Cells
  
  Volume: 269 Pages: 112791-112791
- DOI
  10.1016/j.solmat.2024.112791
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05354
[Journal Article] Degradation of vertical GaN diodes during proton and xenon-ion irradiation2023
- Author(s)
  Okumura Hironori、Ogawara Yohei、Togawa Manabu、Miyahara Masaya、Isobe Tadaaki、Itabashi Kosuke、Nishinaga Jiro、Imura Masataka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: 6 Pages: 064001-064001
- DOI
  10.35848/1347-4065/acddb4
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K25887
[Journal Article] On the Origin of Tail States and Open Circuit Voltage Losses in Cu(In,Ga)Se22023
- Author(s)
  Ramirez Omar、Nishinaga Jiro、Dingwell Felix、Wang Taowen、Prot Aubin、Wolter Max Hilaire、Ranjan Vibha、Siebentritt Susanne
- Journal Title
  
  Solar RRL
  
  Volume: 7 Issue: 13 Pages: 2300054-2300054
- DOI
  10.1002/solr.202300054
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05354
[Journal Article] Annealing effects on Cu(In,Ga)Se2 solar cells irradiated by high-fluence proton beam2023
- Author(s)
  Nishinaga Jiro、Togawa Manabu、Miyahara Masaya、Itabashi Kosuke、Okumura Hironori、Imura Masataka、Kamikawa Yukiko、Ishizuka Shogo
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SK Pages: SK1014-SK1014
- DOI
  10.35848/1347-4065/acc53b
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K18635, KAKENHI-PROJECT-20K05354, KAKENHI-PROJECT-23K25887
[Journal Article] 分子線エピタキシー法によるIII-V、I-III-VI族化合物半導体の結晶成長2022
- Author(s)
  西永慈郎
- Journal Title
  
  真空ジャーナル
  
  Volume: 181 Pages: 13-17
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05354
[Journal Article] Effects of alkali-metal incorporation into epitaxial Cu(In,Ga)Se2 solar cells prepared by molecular beam epitaxy2022
- Author(s)
  Nishinaga Jiro、Ishizuka Shogo
- Journal Title
  
  Thin Solid Films
  
  Volume: 741 Pages: 139034-139034
- DOI
  10.1016/j.tsf.2021.139034
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05354
[Journal Article] Cu(In,Ga)Se2太陽電池の放射線耐性2022
- Author(s)
  西永慈郎、外川学、宮原正也
- Journal Title
  
  応用物理学会結晶工学分科会第156回研究会テキスト
  
  Volume: 156 Pages: 42-49
- Data Source
  KAKENHI-PROJECT-20K05354
[Journal Article] Impacts of KF Post-Deposition Treatment on the Band Alignment of Epitaxial Cu(In,Ga)Se2 Heterojunctions2022
- Author(s)
  Nagai Takehiko、Nishinaga Jiro、Tampo Hitoshi、Kim Shinho、Hirayama Kazuhiro、Matsunobe Tatsuo、Chen Guanzhong、Ide Yuya、Ishizuka Shogo、Shibata Hajime、Niki Shigeru、Terada Norio
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 14 Issue: 14 Pages: 16780-16790
- DOI
  10.1021/acsami.1c21193
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05354
[Journal Article] Optoelectronic Inactivity of Dislocations in Cu(In,Ga)Se2 Thin Films2021
- Author(s)
  Abou-Ras Daniel、Nikolaeva Aleksandra、Krause Maximilian、Korte Lars、Stange Helena、Mainz Roland、Simsek Sanli Ekin、van Aken Peter A.、Sugaya Takeyoshi、Nishinaga Jiro
- Journal Title
  
  Physica Status Solidi Rapid Research Letters
  
  Volume: 15 Issue: 7 Pages: 2100042-2100042
- DOI
  10.1002/pssr.202100042
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05354
[Journal Article] Efficient Narrow Band Gap Cu(In,Ga)Se2 Solar Cells with Flat Surface2020
- Author(s)
  Kamikawa Yukiko、Nishinaga Jiro、Shibata Hajime、Ishizuka Shogo
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 12 Issue: 40 Pages: 45485-45492
- DOI
  10.1021/acsami.0c11203
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05354
[Journal Article] A comparative study of the effects of light and heavy alkali-halide postdeposition treatment on CuGaSe2 and Cu(In,Ga)Se2 thin-film solar cells2020
- Author(s)
  S. Ishizuka, N. Taguchi, J. Nishinaga, Y. Kamikawa, H. Shibata
- Journal Title
  
  Solar Energy
  
  Volume: 211 Pages: 1092-1101
- DOI
  10.1016/j.solener.2020.10.048
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05282, KAKENHI-PROJECT-20K05354
[Journal Article] Crystalline Characterisitics of Epitaxial Cu(In,Ga)Se2 Layers on GaAs (001) Substrates2020
- Author(s)
  Nishinaga Jiro、Sugaya Takeyoshi
- Journal Title
  
  Proceedings of 47th IEEE Photovoltaic Specialists Conference (PVSC)
  
  Volume: 2020 Pages: 2251-2257
- DOI
  10.1109/pvsc45281.2020.9300962
- Data Source
  KAKENHI-PROJECT-20K05354
[Journal Article] Degradation mechanism of CIGS solar cells induced by exposure to air2016
- Author(s)
  J. Nishinaga, Y. Kamikawa, T. Koida, H. Shibata, and S. Niki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420299
[Journal Article] High absorption efficiency of AlGaAs/GaAs superlattice solar cells2015
- Author(s)
  Jiro Nishinaga, Atsushi Kawaharazuka and Yoshiji. Horikoshi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54
- NAID
  210000145127
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-23360163
[Journal Article] High absorption efficiency of AlGaAs/GaAs superlattice solar cells2015
- Author(s)
  Jiro Nishinaga, Atsushi Kawaharazuka and Yoshiji Horikoshi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 5 Pages: 052301-052301
- DOI
  10.7567/jjap.54.052301
- NAID
  210000145127
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420298, KAKENHI-PROJECT-25420299
[Journal Article] Recombination current in AlGaAs/GaAs superlattice solar-cells grown by molecular beam epitaxy2015
- Author(s)
  A. Kawaharazuka, J. Nishinaga, Y. Horikoshi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: in press Pages: 326-329
- DOI
  10.1016/j.jcrysgro.2015.03.047
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420298, KAKENHI-PROJECT-25420299
[Journal Article] Optical properties of AlxGa1-xAs/GaAs superlattice solar cells2015
- Author(s)
  40.Makoto Kuramoto, Hiroyuki Urabe, Tomohiro Nakano, Atsushi Kawaharazuka, Jiro Nishinaga, Toshiki Makimoto and Yoshiji Horikoshi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: in print Pages: 22770-22770
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-23360163
[Journal Article] Optical properties of AlxGa1−xAs/GaAs superlattice solar cells2015
- Author(s)
  Makoto Kuramoto, Hiroyuki Urabe, Tomohiro Nakano, Atsushi Kawaharazuka, Jiro Nishinaga, Toshiki Makimoto, Yoshiji Horikoshi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: in press Pages: 333-336
- DOI
  10.1016/j.jcrysgro.2015.03.024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420298, KAKENHI-PROJECT-25420299
[Journal Article] Selective area growth of InAs nanostructures on faceted GaAs microstructure by migration enhanced epitaxy2013
- Author(s)
  M. Zander, J. Nishinaga, and Y. Horikoshi
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 378 Pages: 480-484
- DOI
  10.1016/j.jcrysgro.2012.12.089
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360163, KAKENHI-PROJECT-23760293, KAKENHI-PROJECT-25420299
[Journal Article] Crystalline and electrical characteristics of C60 uniformly doped GaAs layers2013
- Author(s)
  J. Nishinaga and Y. Horikoshi
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 378 Pages: 81-84
- DOI
  10.1016/j.jcrysgro.2012.12.044
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360163, KAKENHI-PROJECT-23760293, KAKENHI-PROJECT-25420299
[Journal Article] Controlled nucleation and optical properties of InAs quantum dots grown on faceted GaAs microstructures2013
- Author(s)
  M. Zander, J. Nishinaga, H. Gotoh, and Y. Horikoshi
- Journal Title
  
  Phys. Status Solidi
  
  Volume: C 10, Issue: 11 Pages: 1500-1504
- DOI
  10.1002/pssc.201300274
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360163, KAKENHI-PROJECT-25420299
[Journal Article] High Absorption Efficiency Superlattice Solar Cells by Excitons2013
- Author(s)
  J. Nishinaga, A. Kawaharazuka, K. Onomitsu, and Y. Horikoshi
- Journal Title
  
  J. Appl. Phys. 52
  
  Volume: 52 Issue: 11R Pages: 112302-112302
- DOI
  10.7567/jjap.52.112302
- NAID
  40019883484
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360163, KAKENHI-PROJECT-25420298, KAKENHI-PROJECT-25420299
[Journal Article] Electrical properties of C_<60> and Si codoped GaAs layers2012
- Author(s)
  J. Nishinaga and Y. Horikoshi
- Journal Title
  
  J. Vac. Sci. Technol. B
  
  Volume: 30 Issue: 2
- DOI
  10.1116/1.3678205
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760293
[Journal Article] Excitonic absorption on AlGaAs/GaAs superlattice solar cells2012
- Author(s)
  J.Nishinaga, A.Kawaharazuka, K.Onomitsu, K.H.Ploog, Y.Horikoshi
- Journal Title
  
  Physica Status solidi C
  
  Volume: 9 Issue: 2 Pages: 330-333
- DOI
  10.1002/pssc.201100276
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760233, KAKENHI-PROJECT-23760293
[Journal Article] Area selective epitaxy of InAs on GaAs(001) and GaAs(111) A by migration enhanced epitaxy2011
- Author(s)
  M.Zander, J.Nishinaga, K.Iga, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth
  
  Volume: (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Effect of excitons in AlGaAs/GaAs superlattice solar cells2011
- Author(s)
  J.Nishinaga, A.Kawaharazuka, K.Onomitsu, K.H.Ploog, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: (in press)
- NAID
  40018812632
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy2011
- Author(s)
  A.Kawaharazuka, K.Onomitsu, J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth
  
  Volume: (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Growth of CuGaSe2 Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy2011
- Author(s)
  M.FUJITA, A.KAWAHARAZUKA, J.NISHINAGA, K.H.PLOOG, Y.HORIKOSHI
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50 Issue: 12R Pages: 125502-125502
- DOI
  10.1143/jjap.50.125502
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760233, KAKENHI-PROJECT-23360163
[Journal Article] Growth and characterization of C60/GaAs interfaces and C60 doped GaAs2011
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth
  
  Volume: (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Growth and characterization of C60/GaAs interfaces and C60 doped GaAs2011
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Cryst.Growth
  
  Volume: 323 Issue: 1 Pages: 135-139
- DOI
  10.1016/j.jcrysgro.2010.11.068
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360163, KAKENHI-PROJECT-23760293
[Journal Article] Effect of excitons in AlGaAs/GaAs superlattice solar cells2011
- Author(s)
  J.Nishinaga, A.Kawaharazuka, K.Onomitsu, K.H.Ploog, Y.Horikoshi
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50 Issue: 5R Pages: 052302-052302
- DOI
  10.1143/jjap.50.052302
- NAID
  40018812632
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760233, KAKENHI-PROJECT-23360163, KAKENHI-PROJECT-23760293
[Journal Article] Excitonic absorption on AlGaAs/GaAs superlattice solar cells2011
- Author(s)
  J.Nishinaga, A.Kawaharazuka, K.Onomitsu, K.H.Ploog, Y.Horikoshi
- Journal Title
  
  Physica Status solidi
  
  Volume: C9(2) Pages: 330-333
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360163
[Journal Article] Electrical properties of C60 delta-doped CaAs and AlGaAs layers grown by MBE2010
- Author(s)
  J.Nishinaga, T.Hayashi, K.Hishida, Y.Horikoshi
- Journal Title
  
  Physica Status solidi C (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Electrical properties of C60 delta-doped GaAs and AlGaAs layers grown by MBE2010
- Author(s)
  J.Nishinaga, T.Hayashi, K.Hishida, Y.Horikoshi
- Journal Title
  
  Physica Status solidi C
  
  Volume: 7 Pages: 2486-2489
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Electrical properties of C <60> delta-doped GaAs and AlGaAs layers grown by MBE2010
- Author(s)
  J.Nishinaga, T.Hayashi, K.Hishida, Y.Horikoshi
- Journal Title
  
  Physica Status solidi C 7
  
  Pages: 2486-2489
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Structural properties of C60-multivalent metal composite layers grown by molecular beam epitaxy2010
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] GaAs基板上フラーレンC60の結晶成長とC60 doped GaAsの電気的特性2010
- Author(s)
  西永慈郎、堀越佳治
- Journal Title
  
  表面科学
  
  Volume: 31 Pages: 632-636
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Structural properties of C <60> multivalent metal composite layers grown by molecular beam epitaxy2010
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B 28
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] GaAs基板上フラーレンC <60>の結晶成長とC <60> doped GaAsの電気的特性2010
- Author(s)
  西永慈郎、堀越佳治
- Journal Title
  
  表面科学 31
  
  Pages: 632-636
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Structural properties of C60-multivalent metal composite layers grown by molecular beamepitaxy2010
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Journal Title
  
  J.Vac.Sci.Technol.B
  
  Volume: 28
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] RHEED intensity oscillation of C60 layer epitaxial growth2009
- Author(s)
  J. Nishinaga, A. Kawaharazuka, Y. Honikoshi
- Journal Title
  
  Journal of Crystal Growth (in press)
- NAID
  120001351265
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Crystallne and electrical characteristics of C60-doped GaAs films2009
- Author(s)
  J. Nishinaga, T. Takada, T. Hayashi, Y. Horikoshi
- Journal Title
  
  J. Cryst. Growth 311
  
  Pages: 2232-2235
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] RHEED intensity oscillation of C60 layer epitaxial growth2009
- Author(s)
  J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
- Journal Title
  
  J. Cryst. Growth 311
  
  Pages: 2227-2231
- NAID
  120001351265
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Investigation of C60 Epitaxial Growth Mechanism on GaAs Substrates2009
- Author(s)
  J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
- Journal Title
  
  Japanese Journal of Applied Physics 48
- NAID
  120001351264
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] Investigation of C60 Epitaxial Growth Mechanism on GaAs Substrates2009
- Author(s)
  J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
- Journal Title
  
  Jpn. J. Appl. Phys. 48
- NAID
  120001351264
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Crystalline and electrical characteristics of C60?doped GaAs films2009
- Author(s)
  J. Nishinaga, T. Takada, T. Hayashi, Y. Horikoshi
- Journal Title
  
  Journal of Crystal Growth (in press)
- NAID
  120001351266
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] RHEED intensity oscillations of C60 growth on GaAs substrates2008
- Author(s)
  J. Nishinaga, A. Kawaharazuka, Y. Honkoshi
- Journal Title
  
  Applied Surface Science 255
  
  Pages: 682684-682684
- NAID
  120001351263
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760203
[Journal Article] RHEED intensity oscillations of C60 growth on GaAs substrates2008
- Author(s)
  J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
- Journal Title
  
  Appl. Surf. Sci. 255
  
  Pages: 682-684
- NAID
  120001351263
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Characteristics of multvalent impurity doped C60 films grown by MBE2007
- Author(s)
  J.Nishinaga
- Journal Title
  
  J.Crystal Growth 301-302
  
  Pages: 687-691
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Nanoscale selective area epitaxy of C60 crystals on GaAs by molecular beam epitaxy2006
- Author(s)
  J.Nishinaga, T.Aihara, T.Toda, F.Matsutani, Y.Horikoshi
- Journal Title
  
  J. Vac. Sci. Technol. B. Vol. 24(3)
  
  Pages: 1587-1590
- NAID
  120001351262
- Data Source
  KAKENHI-PROJECT-17206031
[Journal Article] Mechanical and optical characteristics of Al-doped C60 films2005
- Author(s)
  J.Nishinaga, T.Aihara, H.Yamagata, Y.Horikoshi
- Journal Title
  
  J.Crystal Growth 278
  
  Pages: 633-637
- NAID
  120001351261
- Data Source
  KAKENHI-PROJECT-17206031
[Patent] 太陽電池の製造方法2015
- Inventor(s)
  西永慈郎、柴田肇、仁木栄
- Industrial Property Rights Holder
  西永慈郎、柴田肇、仁木栄
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2015-056603
- Filing Date
  2015-03-19
- Data Source
  KAKENHI-PROJECT-25420299
[Patent] 太陽電池2013
- Inventor(s)
  小野満恒二、山口浩司、河原塚篤、藤田実樹、西永慈郎、堀越佳治
- Industrial Property Rights Holder
  小野満恒二、山口浩司、河原塚篤、藤田実樹、西永慈郎、堀越佳治
- Filing Date
  2013-03-18
- Data Source
  KAKENHI-PROJECT-23760293
[Patent] 太陽電池2013
- Inventor(s)
  小野満恒二、山口浩司、河原塚篤、藤田実樹、西永慈郎、堀越佳治
- Industrial Property Rights Holder
  小野満恒二、山口浩司、河原塚篤、藤田実樹、西永慈郎、堀越佳治
- Industrial Property Rights Type
  特許
- Filing Date
  2013-03-18
- Data Source
  KAKENHI-PROJECT-23760293
[Patent] 太陽電池2013
- Inventor(s)
  堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
- Industrial Property Rights Holder
  堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
- Industrial Property Rights Type
  特許
- Filing Date
  2013-03-18
- Data Source
  KAKENHI-PROJECT-23360163
[Patent] 太陽電池2013
- Inventor(s)
  小野満恒二、山口浩司、河原塚篤、藤田実樹、西永慈郎、堀越佳治
- Industrial Property Rights Holder
  小野満恒二、山口浩司、河原塚篤、藤田実樹、西永慈郎、堀越佳治
- Filing Date
  2013-03-25
- Data Source
  KAKENHI-PROJECT-23760293
[Patent] 太陽電池2013
- Inventor(s)
  小野満恒二、山口浩司、河原塚篤、藤田実樹、西永慈郎、堀越佳治
- Industrial Property Rights Holder
  小野満恒二、山口浩司、河原塚篤、藤田実樹、西永慈郎、堀越佳治
- Industrial Property Rights Type
  特許
- Filing Date
  2013-03-25
- Data Source
  KAKENHI-PROJECT-23760293
[Patent] CIS-CGS 太陽電池2013
- Inventor(s)
  堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
- Industrial Property Rights Holder
  堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
- Industrial Property Rights Type
  特許
- Filing Date
  2013-03-25
- Overseas
- Data Source
  KAKENHI-PROJECT-23360163
[Patent] 太陽電池2012
- Inventor(s)
  堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
- Industrial Property Rights Holder
  堀越佳治、河原塚篤、西永慈郎、山口浩司、小野満恒二
- Industrial Property Rights Type
  特許
- Filing Date
  2012-07-27
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] 高Ga組成Cu(In,Ga)Se2太陽電池の結晶成長2024
- Author(s)
  西永慈郎、上川由紀子、Daniel Abou-ras、石塚尚吾
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] High radiation tolerance of 10um thick Cu(In,Ga)Se2 diodes2023
- Author(s)
  西永慈郎、外川学、石塚尚吾
- Organizer
  第42回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] The role of grain boundaries and dislocations in various solar-cell materials on the corresponding device performance2023
- Author(s)
  Daniel Abou-ras, Sinju Thomas, Dan Wargulski, Jiro Nishinaga
- Organizer
  Horizons symposium: Electronic & Energy materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] Widegap Cu(In,Ga)Se2 エピタキシャル成長に関する考察2023
- Author(s)
  西永慈郎
- Organizer
  第52回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] Microstructure-property relationships in epitaxial Cu(In,Ga)Se2 solar cell absorbers2023
- Author(s)
  Daniel Abou-ras, Jiro Nishinaga, Ulrike Bloeck, Henrik Prell, Sinju Thomas, Michael Tovar, Dan R. Wargulski, Harvey Guthrey, Pat Trimby, Aimo Winkelmann, Yukiko Kamikawa, Takeyoshi Sugaya, Shogo Ishizuka
- Organizer
  IEEE PVSC 50th
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] Cu(In,Ga)Se2 detectors with high radiation tolerance2023
- Author(s)
  Jiro Nishinaga
- Organizer
  The 25th Takayanagi Kenjiro Memorial Symposium
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] Chalcogenide semiconductor detector with high radiation tolerance2022
- Author(s)
  Jiro Nishinaga
- Organizer
  Physics in LHC and Beyond, Matsue (Japan)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] Radiation tolerance of Cu(In,Ga)Se2 solar cells irradiated by proton beam2022
- Author(s)
  Jiro Nishinaga, Manabu Togawa, Shogo Ishizuka,
- Organizer
  PVSEC-33, Nagoya (Japan)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] Cu(In,Ga)Se2太陽電池の放射線耐性2022
- Author(s)
  西永慈郎
- Organizer
  応用物理学会結晶工学分科会第156回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] Effects of alkali-metal doping on epitaxial Cu(In,Ga)Se2 solar cells2021
- Author(s)
  Jiro Nishinaga, Shogo Ishizuka
- Organizer
  E-MRS 2021 Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] 多元系化合物半導体ヘテロ界面の結晶成長2020
- Author(s)
  西永慈郎
- Organizer
  第49回日本結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] Epitaxial Cu(In,Ga)Se2太陽電池のアルカリ金属添加効果2020
- Author(s)
  西永慈郎、石塚尚吾
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] 多元系化合物半導体ヘテロ構造の結晶成長2020
- Author(s)
  西永慈郎
- Organizer
  第12回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] Crystalline and electrical properties of epitaxial Cu(In,Ga)Se2 layers on GaAs substrates2020
- Author(s)
  Jiro Nishinaga, Takeyoshi Sugaya
- Organizer
  2020 IEEE PVSE-47
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] Ag添加によるCu(In,Ga)Se2太陽電池の高効率化2020
- Author(s)
  西永慈郎、石塚尚吾、上川由紀子、鯉田崇、柴田肇
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] High efficiency epitaxial CIGS solar cells grown on p-type GaAs substrates2020
- Author(s)
  Jiro Nishinaga, Takeyoshi Sugaya
- Organizer
  Virtual Chalcogenide PV Conference 2020
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05354
[Presentation] 大気下におけるCIGS太陽電池の効率劣化の解析2016
- Author(s)
  西永慈郎、上川由紀子、柴田肇、仁木栄
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] Cu2ZnSn(S,Se)4薄膜のCdS層製膜前における表面処理の効果2016
- Author(s)
  西永慈郎、反保衆志、酒井紀行、加藤拓也、杉本広紀、柴田肇、仁木栄
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] Influence on recombination process of CIGS solar cells induced by air exposure2015
- Author(s)
  J. Nishinaga, Y. Kamikawa, H. Shibata, and S. Niki
- Organizer
  25th International Photovoltaic Science and Engineering Conference (PVSEC)
- Place of Presentation
  Busan, Korea
- Year and Date
  2015-11-15
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] CIGS太陽電池の劣化機構の解析2015
- Author(s)
  西永慈郎、上川由紀子、崔誠佑、柴田肇、仁木栄
- Organizer
  第12回「次世代の太陽光発電システム」シンポジウム
- Place of Presentation
  ホテル華の湯、郡山
- Year and Date
  2015-05-28
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] Influence on carrier recombination of Cu(In,Ga)Se2 solar cells induced by device processing2015
- Author(s)
  J. Nishinaga
- Organizer
  Collaborative Conference on Crystal Growth (3CG) 2015
- Place of Presentation
  Hong Kong
- Year and Date
  2015-12-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] 高温時における超格子太陽電池の吸収係数2015
- Author(s)
  西永慈郎、河原塚篤、堀越佳治
- Organizer
  第3４回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖
- Year and Date
  2015-07-15
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] C60 doped GaAsダイオードの容量電圧特性2014
- Author(s)
  西永慈郎
- Organizer
  第６１回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] フラーレン添加GaAsダイオードの接合容量について2013
- Author(s)
  西永慈郎
- Organizer
  第７４回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] Crystalline and electrical characteristics of C60 doped GaAs layers2013
- Author(s)
  J. Nishinaga
- Organizer
  第３２回電子材料シンポジウム
- Place of Presentation
  滋賀
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] Excitonic absorption on AlGaAs/GaAs superlattice solar cells2013
- Author(s)
  J. Nishinaga
- Organizer
  40th International Symposium on Compound Semiconductors
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] Excitonic absorption on AlGaAs/GaAs superlattice solar cells2013
- Author(s)
  J. Nishinaga
- Organizer
  40th International Symposium on Compound Semiconductors
- Place of Presentation
  Kobe, JapanMay
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] Electrical properties of fullerene doped GaAs pin diodes grown by MBE2013
- Author(s)
  J. Nishinaga
- Organizer
  Collaborative Conference on Crystal Growth (3CG)
- Place of Presentation
  Cancun, Mexico
- Invited
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] Excitonic absorption on AlGaAs/GaAs superlattice solar cells2013
- Author(s)
  J. Nishinaga
- Organizer
  2013 MRS Fall Meeting
- Place of Presentation
  Boston, Massachusetts, USA
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] Excitonic absorption on AlGaAs/GaAs superlattice solar cells2013
- Author(s)
  J. Nishinaga
- Organizer
  40th International Symposium on Compound Semiconductors
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] フラーレン添加GaAs pinダイオードの電気的特性2013
- Author(s)
  西永慈郎
- Organizer
  第６０回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] Electrical properties of fullerene doped GaAs pin diodes grown by MBE2013
- Author(s)
  . J. Nishinaga
- Organizer
  Collaborative Conference on Crystal Growth (3CG)
- Place of Presentation
  Cancun, Mexico
- Invited
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] Electrical properties of fullerene doped GaAs pin diodes grown by MBE2013
- Author(s)
  J. Nishinaga
- Organizer
  Collaborative Conference on Crystal Growth (3CG)
- Place of Presentation
  The Westin Resort & Spa, Cancun, Mexico
- Invited
- Data Source
  KAKENHI-PROJECT-25246010
[Presentation] Crystalline and electrical properties of fullerene doped GaAs pin diodes2013
- Author(s)
  J. Nishinaga
- Organizer
  Solid State Devices and Materials
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] Electrical properties of fullerene doped GaAs pin diodes grown by MBE2013
- Author(s)
  J. Nishinaga
- Organizer
  Collaborative Conference on Crystal Growth (3CG)
- Place of Presentation
  Cancun, Mexico
- Invited
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] Excitonic absorption on AlGaAs/GaAs superlattice solar cells2013
- Author(s)
  J. Nishinaga
- Organizer
  30th North American Molecular Beam Epitaxy Conference
- Place of Presentation
  Banff, Canada
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] Electronic band structures of fullerene / GaAs heterointerfaces and their applications2013
- Author(s)
  J. Nishinaga
- Organizer
  2013 Energy Materials Nanotechnology Meeting
- Place of Presentation
  Houston, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] Crystalline and electrical characteristics of C60 doped GaAs layers2013
- Author(s)
  西永慈郎
- Organizer
  第３２回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] Excitonic absorption on AlGaAs / GaAs superlattice solar cells2013
- Author(s)
  J. Nishinaga
- Organizer
  30th North American Molecular Beam Epitaxy Conference
- Place of Presentation
  Banff, Canada
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] GaAsの低温MBE成長について2012
- Author(s)
  西永慈郎
- Organizer
  結晶成長の数理第７回研究会
- Place of Presentation
  学習院大学
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] フラーレン添加GaAs薄膜の結晶学的特性2012
- Author(s)
  西永慈郎
- Organizer
  第43回フラーレン・ナノチューブ・グラフェン総合シンポジウム
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] フラーレン添加GaAs薄膜の光学的特性2012
- Author(s)
  西永慈郎
- Organizer
  第７３回応用物理学会学術講演会
- Place of Presentation
  愛媛大学
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] フラーレン添加GaAs薄膜の電気的特性2012
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] Crystal Growth of fullerene/GaAs interfaces and their applications2012
- Author(s)
  J. Nishinaga
- Organizer
  2012 Energy Materials Nanotechnology Meeting
- Place of Presentation
  Orlando, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] Crystal growth and structural characteristics of fullerene / GaAs interfaces2012
- Author(s)
  J. Nishinaga
- Organizer
  Collaborative Conference on Crystal Growth (3CG)
- Place of Presentation
  Orlando, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] フラーレン・GaAsヘテロ構造の結晶成長と物性評価2012
- Author(s)
  西永慈郎
- Organizer
  第１回結晶工学未来塾
- Place of Presentation
  学習院大学
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] Crystal growth and structural characteristics of fullerene2012
- Author(s)
  J. Nishinaga
- Organizer
  GaAs interfaces, Collaborative Conference on Crystal Growth (3CG)
- Place of Presentation
  Orlando, USA
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] フラーレン添加GaAs薄膜の電気的特性2012
- Author(s)
  西永慈郎
- Organizer
  第５９回応用物理学関係連合講演会(招待講演)
- Place of Presentation
  早稲田大学、東京
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] Electrical characteristics of C60 doped GaAs layers grown by MEE2012
- Author(s)
  J. Nishinaga
- Organizer
  17th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Nara, Japan
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] Electrical characteristics of C60, Si codoped GaAs layers grown by MEE2012
- Author(s)
  西永慈郎
- Organizer
  第３１回電子材料シンポジウム
- Place of Presentation
  修善寺
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] Electrical characteristics of C_<60> doped GaAs layers grown by MEE2012
- Author(s)
  J. Nishinaga and Y. Horikoshi
- Organizer
  17th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Nara, Japan
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] Electrical properties of C60 and Si codoped GaAs layers2011
- Author(s)
  J.Nishinaga, Y.Horikoshi
- Organizer
  28th North American Molecular Beam Epitaxy
- Place of Presentation
  San Diego, USA
- Year and Date
  2011-08-14
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] C60, Si codoped GaAsの光電流スペクトル2011
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Excitonic Effect on the Semiconductor Solar-Cells with AlGaAs/GaAs Superlattices2011
- Author(s)
  A.Kawaharazuka, J.Nishinaga, Y.Horikoshil
- Organizer
  21st International Photovoltaic Science and Engineering Conference (PVSEC-21)
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2011-12-02
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] Excitonic absorption on AlGaAs/GaAs superlattice solar cells2011
- Author(s)
  J.Nishinaga, A.Kawaharazuka, K.Onomitsu, K.H.Ploog, Y.Horikoshi
- Organizer
  38th International Symposium on Compound Semiconductors
- Place of Presentation
  Berlin, Germany
- Year and Date
  2011-05-22
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] Excitonic absorption on AlGaAs / GaAs superlattice solar cells2011
- Author(s)
  J. Nishinaga
- Organizer
  38th International Symposium on Compound Semiconductors
- Place of Presentation
  Berlin, Germany
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] AlGaAs/GaAs超格子太陽電池における励起子吸収2011
- Author(s)
  西永慈郎、河原塚篤、小野満恒二、クラウスプローク、堀越佳治
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] AlGaAs/GaAs超格子太陽電池の吸収効率の評価(31pH-12)2011
- Author(s)
  河原塚篤、西永慈郎、堀越佳治
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] 励起子吸収を利用したAlGaAs/GaAs超格子太陽電池(31pH-11)2011
- Author(s)
  西永慈郎、河原塚篤、小野満恒二、クラウスプローク、堀越佳治
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] C60, Si codoped GaAs薄膜の結晶学的・電気的特性2011
- Author(s)
  西永慈郎
- Organizer
  第７２回応用物理学会学術講演会
- Place of Presentation
  山形大学、山形
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] 選択成長したInAs微細構造とGaAs(001)、(111)A基板の界面特性2011
- Author(s)
  マレーネツァンダー、西永慈郎、堀越佳治
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Electrical properties of C60 and Si codoped GaAs layers2011
- Author(s)
  西永慈郎
- Organizer
  第３０回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖、滋賀県
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] Electrical properties of C60 and Si codoped GaAs layers2011
- Author(s)
  J. Nishinaga
- Organizer
  28th North American Molecular Beam Epitaxy
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] Structural properties of InAs-basad nanostructures on GaAs(001) and GaAs(111) A grown by area selective epitaxy2011
- Author(s)
  M.Zander, J.Nishinaga, K.Iga, Y.Horikoshi
- Organizer
  38th International Symposium on Compound Semiconductors
- Place of Presentation
  Berlin, Germany
- Year and Date
  2011-05-22
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] Electrical properties of C60 delta-doped GaAs, AlGaAs layers2011
- Author(s)
  J. Nishinaga
- Organizer
  Villa Conference on Interactions among Nanostructures(招待講演)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PROJECT-23760293
[Presentation] 太陽電池における励起子吸収について2010
- Author(s)
  西永慈郎、菱田清、小野満恒二、堀越佳治
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] C60 -doped GaAs, AlGaAsのトラップ準位2010
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  応用物理学会結晶工学分科会主催年末講演会
- Place of Presentation
  学習院大学
- Year and Date
  2010-12-27
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Electrical properties of C60 delta-doped GaAs layers grown by MBE2010
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  第29回電子材料シンポジウム
- Place of Presentation
  修善寺、静岡県
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Migration-enhanced epitaxyによるGaAs(001)上のInAs選択成長2010
- Author(s)
  マレーネツァンダー、西永慈郎、堀越佳治
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Growth and characterization of C <60>/GaA sinterfaces and C <60> doped GaAs2010
- Author(s)
  J.Nishinaga
- Organizer
  16th International Conference on Molecular Beam Epitaxy (Invited)
- Place of Presentation
  Berlin, Germany
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Growth and characterization of C60/GaAs interfaces and C60 doped GaAs2010
- Author(s)
  J.Nishinaga
- Organizer
  16th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Berlin, Germany(招待講演)
- Year and Date
  2010-08-22
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] C60 delta-doped Be-GaAsの電気的特性2010
- Author(s)
  西永慈郎、菱田清、堀越佳治
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Area-selective epitaxy of InAs by migration enhanced epitaxy (MEE)2010
- Author(s)
  M.Zander, J.Nishinaga, Y.Horikoshi
- Organizer
  16th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Berlin, Germany
- Year and Date
  2010-08-22
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] C60・Ge複合体薄膜を用いた有機薄膜太陽電池2010
- Author(s)
  林剛史、西永慈郎、菱田清、堀越佳治
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] C60 doped GaAs, AlGaAsのトラップ準位2010
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] GaAs(111)A基板上InAs薄膜成長のヒロック形成抑制2010
- Author(s)
  伊賀一貴、西永慈郎、マレーネツァンダー、堀越佳治
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] AiGaAs/GaAs超格子構造太陽電池における励起子吸収の効果2010
- Author(s)
  河原塚篤、小野満恒二、西永慈郎、堀越佳治
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] 学生実験「太陽電池の光照射強度依存性」2009
- Author(s)
  竹内登志男, 佐藤道夫, 西永慈郎, 河原塚篤, 堀越佳治
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] Electrical properties of C <60>δ-doped GaAs layers grown by MBE2009
- Author(s)
  J.Nishinaga, T.Hayashi, K.Hishida, Y.Horikoshi
- Organizer
  36th International Symposium on Compound Semiconductor
- Place of Presentation
  Santa Barbara, USA
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] AlGaAs中へのフラーレンC60添加による電子トラップセンターの解析2009
- Author(s)
  西永慈郎、林剛史、菱田清、堀越佳治
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] 透過電子顕微鏡による多価金属・フラーレン複合体の構造解析2009
- Author(s)
  西永慈郎
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学、日本
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Electrical properties of C60-delta-doped GaAs layers grown by MBE2009
- Author(s)
  J.Nishinaga, T.Hayashi, K.Hishida, Y.Horikoshi
- Organizer
  36th International Symposiun on Compound Semiconductor
- Place of Presentation
  Santa Barbara, USA
- Year and Date
  2009-08-30
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] GaAs結晶中へのC60ドーピングによる電子トラッピング効果2009
- Author(s)
  西永慈郎, 林剛史, 菱田清, 堀越佳治
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] 透過電子顕微鏡による多価金属・フラーレン複合体の構造解析2009
- Author(s)
  西永慈郎, 杉本敬哉, 堀越佳治
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] GaAs基板上フラーレンC60の核形成2009
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  計算機センター特別研究プロジェクト「結晶成長の数理」第4回研究会
- Place of Presentation
  学習院大学
- Year and Date
  2009-12-26
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] GaAs結晶中へのC60ドーピングによる電子トラッピング効果2009
- Author(s)
  西永慈郎
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学、日本
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Structural propert ies of C60-multivalent matal composite layers grown by MBE2009
- Author(s)
  J.Nishinaga, T.Hayashi, K.Nishida, Y.Horikoshi
- Organizer
  26th North American Molecular Beam Epitaxy
- Place of Presentation
  Princeton, USA
- Year and Date
  2009-08-11
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] 多価金属・フラーレン複合体を用いた有機薄膜太陽電池2009
- Author(s)
  林剛史、西永慈郎、菱田清、堀越佳治
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Structural properties of C <60>-multivalent metal composite layers grown by MBE2009
- Author(s)
  J.Nishinaga, T.Hayashi, K.Hishida, Y.Horikoshi
- Organizer
  26th North American Molecular Beam Epitaxy
- Place of Presentation
  Princeton, USA
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] RHEED強度振動によるGaAs(001)基板上C60結晶成長の解析2008
- Author(s)
  西永慈郎
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] RHEED intensity oscillation of C60 growth on GaAs substrates2008
- Author(s)
  J. Nishinaga, A. Kawaharazuka, Y. Horikoshi
- Organizer
  15th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Vancouver, Canada
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] GaAs高指数面基板上C60結晶薄膜のX線回折測定2008
- Author(s)
  西永慈郎, 林剛史, 河原塚篤, 堀越佳治
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] C60-doped GaAs薄膜の成長と結晶学的特性2008
- Author(s)
  西永慈郎
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] Crystalline and electrical characteristics of C60?doped GaAs films2008
- Author(s)
  J. Nishinaga
- Organizer
  Crystalline and electrical characteristics of C60?doped GaAs films
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2008-08-04
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] GaAs高指数面基板上C60結晶薄膜のX線回折測定2008
- Author(s)
  西永慈郎
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学、日本
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] RHEED intensity oscillation of C60 growth on GaAs substrates2008
- Author(s)
  J. Nishinaga
- Organizer
  15th International Conference on Molecular Beam Epitaxv
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2008-08-04
- Data Source
  KAKENHI-PROJECT-20760203
[Presentation] Crystalline and electrical characteristics of C60-doped GaAs films2008
- Author(s)
  J. Nishinaga, T. Takada, T. Hayashi, Y. Horikoshi
- Organizer
  15th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Vancouver, Canada
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] RHEED intensity oscillations of C60 growth2007
- Author(s)
  J. Nishinaga
- Organizer
  11th International Conference on the Formation of Semiconductor Interfaces
- Place of Presentation
  Brazil
- Data Source
  KAKENHI-PROJECT-17206031
[Presentation] Electrical characteristics of C60 doped HEMT structures
- Author(s)
  J. Nishinaga, Y. Horikoshi
- Organizer
  18th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Flagstaff, USA
- Year and Date
  2014-09-07 – 2014-09-12
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] Excitonic absorption on AlGaAs/GaAs superlattice solar cells
- Author(s)
  J. Nishinaga
- Organizer
  Materials Challenges in Alternative & Renewable Energy 2015
- Place of Presentation
  Jeju, Korea
- Year and Date
  2015-02-24 – 2015-02-27
- Invited
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] Optical Properties of AlGaAs/GaAs superlattice solar cells
- Author(s)
  M. Kuramoto, H. Urabe, T. Nakano, A. Kawaharazuka, J. Nishinaga, T. Makimoto, and Y. Horikoshi
- Organizer
  18th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Flagstaff, USA
- Year and Date
  2014-09-07 – 2014-09-12
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] フラーレン添加GaAs pinダイオードの電気的特性
- Author(s)
  西永慈郎
- Organizer
  第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] High-absorption-efficiency superlattice solar cells by excitons
- Author(s)
  J. Nishinaga, A. Kawaharazuka, and Y. Horikoshi
- Organizer
  Grand Renewable Energy 2014
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2014-07-27 – 2014-08-01
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] Excitonic absorption on AlGaAs/GaAs superlattice solar cells
- Author(s)
  J. Nishinaga
- Organizer
  Materials Challenges in Alternative & Renewable Energy 2015
- Place of Presentation
  Jeju, Korea
- Year and Date
  2015-02-24 – 2015-02-27
- Invited
- Data Source
  KAKENHI-PROJECT-25246010
[Presentation] ナノカーボン・GaAsヘテロ界面の結晶成長と基礎物性
- Author(s)
  西永慈郎
- Organizer
  第44回結晶成長国内会議
- Place of Presentation
  学習院大学、日本
- Year and Date
  2014-11-06 – 2014-11-08
- Invited
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] Recombination current in AlGaAs/GaAs superlattice solar cells grown by molecular beam epitaxy
- Author(s)
  A. Kawaharazuka, J. Nishinaga, and Y. Horikoshi
- Organizer
  18th International Conference on Molecular Beam Epitaxy,
- Place of Presentation
  Flagstaff, USA
- Year and Date
  2014-09-07 – 2014-09-12
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] AlxGa1-xAs/GaAs超格子太陽電池における障壁層厚さの効果
- Author(s)
  20.倉本真，浦部宏之，中野朋洋，河原塚篤，西永慈郎，牧本俊樹，堀越佳治
- Organizer
  第７５回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-23360163
[Presentation] Electrical characteristics of C60 doped HEMT structures
- Author(s)
  西永慈郎、堀越佳治
- Organizer
  第33回電子材料シンポジウム
- Place of Presentation
  修善寺、日本
- Year and Date
  2014-07-09 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] I-V curves of superlattice solar cells at high temperatures
- Author(s)
  J. Nishinaga, A. Kawaharazuka, and Y. Horikoshi
- Organizer
  6th World Conference on Photovoltaic Energy Conversion
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2014-11-23 – 2014-11-27
- Data Source
  KAKENHI-PROJECT-25420299
[Presentation] ナノカーボン・GaAsヘテロ界面の結晶成長と基礎物性
- Author(s)
  西永慈郎
- Organizer
  第44回結晶成長国内会議
- Place of Presentation
  学習院大学
- Year and Date
  2014-11-06 – 2014-11-08
- Invited
- Data Source
  KAKENHI-PROJECT-25246010

1. HORIKOSHI , Yoshiji (60287985)

# of Collaborated Projects: 4 results

# of Collaborated Products: 72 results
2. KAWAHARAZUKA Atsushi (40329082)

# of Collaborated Projects: 3 results

# of Collaborated Products: 21 results
3. OHDOMARI Iwao (30063720)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. MIURA Michiko (70291482)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. SHINADA Takahiro (30329099)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. MATSUDA Kazunari (40311435)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. FUJITA Miki (60386729)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. OKADA Susumu (70302388)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 小野満恒二 (30350466)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 山本貴博 (30408695)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 外川学 (50455359)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
12. 石塚尚吾

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Nishinaga Jiro 西永 慈郎

NISHINAGA Jiro 西永 慈郎

Research Projects

Research Products

Co-Researchers

Epitaxial growth of multinary compound semiconductors for new quantum systemsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of CIGS semiconductor particle detectors with recovery mechanisms from radiation damage

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Epitaxial abrupt interfaces of multinary compound semiconductorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Electronic properties of nanoscale interfaces consisting of nanocarbon materials and inorganic semiconductors

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Memory devices using heterointerfaces of fullerene and GaAsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of solar cells with high stability at elevated temperatures

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Crystal growth and electronic structures of fullerene / GaAs heterostructuresPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of new devices using fullerene and GaAs heterostructures.Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of new high-speed electronic devices using 1D quantum structures

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Book] Crystal Growth: Theory, Mechanism, and Morphology2012

Author(s)

Total Pages

Publisher

Data Source

[Book] Molecular beam epitaxy2012

Author(s)

Total Pages

Publisher

Data Source

[Book] Molecular Beam Epitaxy: From Quantum Wells to Quantum Dots, From Research to Mass Production2012

Author(s)

Publisher

Data Source

[Book] Molecular Beam Epitaxy2012

Author(s)

Total Pages

Publisher

Data Source

[Book] Growth and characterization of fullerene/GaAs interfaces and C_<60> doped GaAs and AlGaAs layers, Molecular Beam Epitaxy: From Quantum Wells to Quantum Dots, From Research to Mass Production (Editor: M. Henini)2012

Author(s)

Nishinaga Jiro 西永慈郎

NISHINAGA Jiro 西永慈郎