Sasaki Takuo 佐々木拓生

Researcher Number	90586190
Other IDs
Affiliation (Current)	2025: 国立研究開発法人量子科学技術研究開発機構, 関西光量子科学研究所放射光科学研究センター, 上席研究員
Affiliation (based on the past Project Information) *help	2025: 国立研究開発法人量子科学技術研究開発機構, 関西光量子科学研究所放射光科学研究センター, 上席研究員 2023 – 2024: 国立研究開発法人量子科学技術研究開発機構, 関西光量子科学研究所放射光科学研究センター, 主幹研究員 2021 – 2022: 国立研究開発法人量子科学技術研究開発機構, 関西光科学研究所放射光科学研究センター, 主幹研究員 2019 – 2020: 国立研究開発法人量子科学技術研究開発機構, 関西光科学研究所放射光科学研究センター, 主幹研究員(定常) 2016 – 2018: 国立研究開発法人量子科学技術研究開発機構, 関西光科学研究所放射光科学研究センター, 主任研究員(定常) … More 2015: 国立研究開発法人日本原子力研究開発機構, 原子力科学研究部門量子ビーム応用研究センター, 研究員 2015: 国立研究開発法人日本原子力研究開発機構, 原子力科学研究部門量子ビーム応用研究センター, 研究員 2014: 独立行政法人日本原子力研究開発機構, 原子力科学研究部門量子ビーム応用研究センター, 任期付研究員 Less
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Thin film/Surface and interfacial physical properties / Nanomaterials engineering Except Principal Investigator Basic Section 30010:Crystal engineering-related / Medium-sized Section 21:Electrical and electronic engineering and related fields
Keywords	Principal Investigator X線回折 / 分子線エピタキシー / 放射光 / 窒化物半導体 / 放射光X線 / コヒーレントX線 / 結晶成長 / その場観察 / Ｘ線回折 / 窒化ガリウム … More / その場X線回折 / グラフェン / 窒化物 / MBE成長 / 放射光利用 / MBE / Ｘ線 / 格子欠陥 / 転位 / ナノ構造 / コアシェル / III-V族半導体 / インジウムガリウム砒素 / その場測定 / 放射光X線回折 / ナノワイヤ … More Except Principal Investigator ナノコラム / 薄膜 / 量子構造 / 赤色発光 / InGaN / 電子顕微鏡 / ScAlMgO4 / 分子線エピタキシー / 窒化物半導体 / 極性制御 / CMOS / GaN / 窒化アルミニウム / ワイドギャップ半導体 / 極性反転 / 2次元正孔ガス / 2次元電子ガス / 窒化ガリウム / 分子線エピタキシー（MBE） / 赤色LED / X線その場観察 / MBE / ヘテロ界面 / ヘテロエピタキシャル成長 / In系窒化物半導体 Less

Development of in-situ real-space X-ray observation technique for crystal growthPrincipal Investigator
- Principal Investigator
  
  佐々木拓生
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  National Institutes for Quantum Science and Technology
Study on three-dimensional lattice-matched epitaxy in nitride semiconductor crystal growth
- Principal Investigator
  
  荒木努
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Ritsumeikan University
赤色発光素子応用に資するInGaNマトリクスの構造制御
- Principal Investigator
  
  山口智広
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Kogakuin University
Development of GaN CMOS Monolithic Integrated Circuits Technology Using Crystal Hetero-Polarity Control
- Principal Investigator
  
  林侑介
- Project Period (FY)
  2022 – 2025
- Research Category
  
  Fund for the Promotion of Joint International Research (Fostering Joint International Research (B))
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Osaka University
Control of heterointerface region in the heteroepitaxial growth of In-based nitride semiconductors
- Principal Investigator
  
  Yamaguchi Tomohiro
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Kogakuin University
Development of free-standing nitride substrates using graphenePrincipal Investigator
- Principal Investigator
  
  SASAKI TAKUO
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  National Institutes for Quantum Science and Technology
Development of dislocation propagation tracking method in nitride semiconductors by synchrotron micro-beam X-raysPrincipal Investigator
- Principal Investigator
  
  Sasaki Takuo
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  National Institutes for Quantum and Radiological Science and Technology
Analysis of lattice strain and controlling of interfacial characteristics in heterostructured-nanowires by synchrotron X-raysPrincipal Investigator
- Principal Investigator
  
  Sasaki Takuo
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Nanomaterials engineering
- Research Institution
  Japan Atomic Energy Agency

All 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014

All Journal Article Presentation Patent

[Journal Article] Real-time observation of liquid-gallium ordering on epitaxially-grown GaN(0001) by X-ray scattering measurements2024
- Author(s)
  Sasaki Takuo、Iwata Takuya、Sugitani Kanya、Takahasi Masamitu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 2 Pages: 020901-020901
- DOI
  10.35848/1347-4065/ad1f08
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22KK0055
[Journal Article] Temperature dependence of liquid-gallium ordering on the surface of epitaxially grown GaN2024
- Author(s)
  Sasaki Takuo、Iwata Takuya、Sugitani Kanya、Kawamura Takahiro、Akiyama Toru、Takahasi Masamitu
- Journal Title
  
  Applied Physics Express
  
  Volume: 17 Issue: 2 Pages: 025502-025502
- DOI
  10.35848/1882-0786/ad237b
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22KK0055
[Journal Article] In-situ X-ray diffraction analysis of GaN growth on graphene-covered amorphous substrates2020
- Author(s)
  Fuke Seiya、Sasaki Takuo、Takahasi Masamitu、Hibino Hiroki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 7 Pages: 070902-070902
- DOI
  10.35848/1347-4065/ab9760
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05298
[Journal Article] In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN2019
- Author(s)
  Yamaguchi Tomohiro、Sasaki Takuo、Fujikawa Seiji、Takahasi Masamitu、Araki Tsutomu、Onuma Takeyoshi、Honda Tohru、Nanishi Yasushi
- Journal Title
  
  Crystals
  
  Volume: 9 Issue: 12 Pages: 631-631
- DOI
  10.3390/cryst9120631
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K05298, KAKENHI-PROJECT-19H00874, KAKENHI-PROJECT-17H02778
[Journal Article] Real-time structural analysis of InGaAs/InAs/GaAs(1 1 1)A interfaces by in situ synchrotron X-ray reciprocal space mapping2019
- Author(s)
  Takuo Sasaki and Masamitu Takahasi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 512 Pages: 33-36
- DOI
  10.1016/j.jcrysgro.2019.02.007
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02778, KAKENHI-PROJECT-16K17522
[Journal Article] 放射光その場X線逆格子マッピングによる化合物半導体の結晶成長ダイナミクス2018
- Author(s)
  佐々木　拓生, 高橋　正光
- Journal Title
  
  応用物理
  
  Volume: 87 Pages: 409-415
- NAID
  130007715777
- Data Source
  KAKENHI-PROJECT-16K17522
[Journal Article] その場X線回折による窒化物半導体薄膜の結晶成長観察2017
- Author(s)
  佐々木　拓生, 高橋　正光
- Journal Title
  
  SPring-8/SACLA利用者情報
  
  Volume: 22 Pages: 306-309
- Open Access
- Data Source
  KAKENHI-PROJECT-16K17522
[Journal Article] Nitride-MBE system for in situ synchrotron X-ray measurements2016
- Author(s)
  Takuo Sasaki, Fumitaro Ishikawa, Tomohiro Yamaguchi, and Masamitu Takahasi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FB05-05FB05
- DOI
  10.7567/jjap.55.05fb05
- NAID
  210000146496
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26790020, KAKENHI-PROJECT-16K17522
[Journal Article] In situ X-ray diffraction study on the influence of growth conditions on polytypes in gold-catalyzed GaAs nanowires2016
- Author(s)
  Masamitu Takahasi, Miwa Kozu, and Takuo Sasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26790020
[Journal Article] Mechanisms Determining the Structure of Gold-Catalyzed GaAs Nanowires Studied by in Situ X-ray Diffraction2015
- Author(s)
  M. Takahasi, M. Kozu, T. Sasaki, W. Hu
- Journal Title
  
  Crystal Growth & Design
  
  Volume: 15 Issue: 10 Pages: 4979-4985
- DOI
  10.1021/acs.cgd.5b00915
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PUBLICLY-15H01054, KAKENHI-PROJECT-26790020
[Journal Article] その場放射光X線回折によるIII-Vエピ成長のひずみ解析2015
- Author(s)
  佐々木拓生、高橋正光
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 15 Pages: 210-217
- Data Source
  KAKENHI-PROJECT-26790020
[Patent] データ取得装置、データ補正装置、データ補正方法、プログラム及び記録媒体2022
- Inventor(s)
  佐々木拓生、高橋正光
- Industrial Property Rights Holder
  佐々木拓生、高橋正光
- Industrial Property Rights Type
  特許
- Filing Date
  2022
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] その場XRD-RSMを用いたGaN上GaInN Buffer層挿入GaInN RF-MBE成長における格子緩和過程観察2023
- Author(s)
  竹内丈、佐々木拓生、横山晴香、尾沼猛儀、本田徹、山口智広、名西やすし
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] CVD法を用いたサファイア基板上h-BNの合成制御2022
- Author(s)
  原田哲匡、八木龍斗、川合良知、佐々木拓生、日比野浩樹
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] その場XRD-RSM を用いたRF-MBE GaInNヘテロエピタキシャル成長における緩和過程観察2022
- Author(s)
  竹内丈、佐々木拓生、藤川誠司、横山晴香、尾沼猛儀、本田徹、山口智広、名西やすし
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] Structural analysis in epitaxial growth of GaInN by RF-MBE using XRD-RSM2022
- Author(s)
  J. Takeuchi, T. Sasaki, H. Yokoyama, T. Onuma, T. Honda, T. Yamaguchi
- Organizer
  The 21st International Symposium on Advanced Technology (ISAT-21)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] Impact of Ga1-xInxN underlayer for growth of Ga1-yInyN/Ga1-xInxN MQW structure2022
- Author(s)
  T. Yamaguchi, K. Tahara, J. Yamada, T. Sasaki, H. Yokoyama, T. Onuma, T. Honda, Y. Nanishi, and K. Kishino
- Organizer
  The 9th Advanced Functional Materials & Devices (AFMD) & The 4th Symposium for Collaborative Research on Energy Science and Technology (SCREST)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] RF-MBE成長赤色発光MQWにおけるGaInN下地層挿入の効果2022
- Author(s)
  山口智広、山田純平、富樫理恵、田原開悟、赤川広海、佐々木拓生、村上尚、尾沼猛儀、本田徹、名西やすし、岸野克巳
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] c面サファイア上に成長させたグラフェン上におけるGaNリモートエピタキシーのその場XRD解析2022
- Author(s)
  福家聖也、佐々木拓生、川合良知、日比野浩樹
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] III-Nitride growth dynamics studied by in situ X-ray diffraction2021
- Author(s)
  Takuo Sasaki and Masamitu Takahasi
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] In situ XRD RSM measurements in MBE growth of GaInN film with low-temperature GaInN buffer layer2021
- Author(s)
  T. Yamaguchi, T. Sasaki, T. Kiguchi, S. Ohno, H. Hirukawa, R. Yoshida, T. Onuma, T. Honda, M. Takahasi, T. Araki, Y. Nanishi
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] Study on DERI growth of InGaN/InN heterostructures using in situ XRD RSM measurements2021
- Author(s)
  T. Araki, N. Goto, H. Tachibana, A. Fukuda, S. Kayamoto, R. Nakamura, K. Matsushima, R. Moriya, S. Yabuta, S. Mouri, T. Sasaki, M. Takahashi, T. Yamaguchi
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] グラフェンを用いたGaNリモートエピタキシーのその場XRD解析2021
- Author(s)
  福家聖也、佐々木拓生、川合　良知、日比野浩樹
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] グラフェン/SiC基板上GaN成長におけるAlNバッファ層の影響2021
- Author(s)
  福家聖也、佐々木拓生、川合良知、日比野浩樹
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] In-situ X-ray diffraction analysis of GaN growth on epitaxial graphene with AlN buffer layer2021
- Author(s)
  S. Fuke, T. Sasaki, Y. Kawai and H. Hibino
- Organizer
  The 9th International Symposium on Surface Science (ISSS9)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] In situ synchrotron X-ray diffraction during III-Nitride semiconductor growth2021
- Author(s)
  Takuo Sasaki and Masamitu Takahasi
- Organizer
  SemiconNano2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] GaN上GaInN膜成長初期のSi層挿入数に対する格子緩和過程の変化2021
- Author(s)
  横山晴香、山口智広、佐々木拓生、大野颯一朗、木口賢紀、比留川大輝、藤川誠司、高橋正光、尾沼猛儀、本田徹
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] In situ XRD RSM measurements in MBE growth of GaInN film with low-temperature GaInN buffer layer2021
- Author(s)
  Tomohiro Yamaguchi, Takuo Sasaki, Takanori Kiguchi, Soichiro Ohno, Hiroki Hirukawa, Ryosuke Yoshida, Takeyoshi Onuma, Tohru Honda, Masamitu Takahasi, Tsutomu Araki, Yasushi Nanishi
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] GaN上GaInN膜成長初期のSi層挿入数に対する格子緩和過程の変化2021
- Author(s)
  横山晴香、山口智広、佐々木拓生、大野颯一朗、木口賢紀、比留川大輝、藤川誠司、高橋正光、尾沼猛儀、本田徹
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] AlNバッファ層を用いたグラフェン/SiC基板上におけるGaN成長2021
- Author(s)
  福家聖也、佐々木拓生、川合良知、日比野浩樹
- Organizer
  応用物理学会関西支部2021年度第２回講演会
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] 二次元物質上でのGaN成長のその場観察2020
- Author(s)
  日比野浩樹、福家聖也、佐々木拓生
- Organizer
  JAEA物質科学センターシンポジウム2020
- Invited
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] 放射光による結晶成長のオペランド計測と「次世代」の方向性2020
- Author(s)
  佐々木　拓生
- Organizer
  科学技術未来戦略ワークショップ
- Invited
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] 放射光X線散乱による窒化物薄膜成長表面のその場構造解析2020
- Author(s)
  佐々木　拓生、高橋　正光
- Organizer
  第81回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] GaInN/GaN成長時の格子緩和に対するSiアンチサーファクタントの効果2020
- Author(s)
  横山晴香、山口智広、佐々木拓生、大野颯一朗、木口賢紀、比留川大輝、藤川誠司、高橋正光、尾沼猛儀、本田徹
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05348
[Presentation] ヘテロエピ薄膜成長の放射光その場 X 線逆格子マッピング2020
- Author(s)
  佐々木　拓生、高橋　正光
- Organizer
  第67回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] グラフェン上GaN成長へのAlNバッファ層の影響2020
- Author(s)
  福家聖也、佐々木拓生、牧野竜市、日比野浩樹
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] GaInN/GaN成長時の格子緩和過程に対するSiアンチサーファクタント効果2020
- Author(s)
  横山晴香、山口智広、佐々木拓生、大野颯一朗、木口賢紀、比留川大輝、藤川誠司、高橋正光、尾沼猛儀、本田徹
- Organizer
  第81回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] サファイア上GaN成長に対する単層二硫化モリブデンバッファ層の影響2019
- Author(s)
  小松直人、高橋正光、佐々木拓生、高田匡平、牧野竜市、日比野浩樹
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05298
[Presentation] N極性GaN上の液体Ga層のその場X線構造解析2019
- Author(s)
  佐々木　拓生, 高橋　正光
- Organizer
  第６６回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17522
[Presentation] GaN表面上Ga吸着層の秩序構造2018
- Author(s)
  佐々木　拓生, 岩田　卓也, 高橋　正光
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17522
[Presentation] GaN表面上Ga吸着層の構造解析2018
- Author(s)
  佐々木　拓生, 岩田　卓也, 高橋　正光
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17522
[Presentation] MBE成長GaNナノワイヤにおけるイエロールミネッセンスの抑制2018
- Author(s)
  上杉　智洋, 佐々木　拓生, 高橋　正光
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17522
[Presentation] GaN表面上Ga吸着層の構造解析2018
- Author(s)
  佐々木　拓生, 岩田　卓也, 高橋　正光
- Organizer
  第１０回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-16K17522
[Presentation] 窒化物半導体成長のその場X線回折測定2018
- Author(s)
  高橋　正光, 佐々木　拓生, 山口　智広
- Organizer
  第47回結晶成長国内会議(JCCG-47)
- Invited
- Data Source
  KAKENHI-PROJECT-16K17522
[Presentation] Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping2018
- Author(s)
  佐々木　拓生, 高橋　正光
- Organizer
  The 20th International Conference on Molecular Beam Epitaxy (ICMBE 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17522
[Presentation] GaN表面のX線CTR散乱測定2018
- Author(s)
  佐々木　拓生, 岩田　卓也, 高橋　正光
- Organizer
  第31回日本放射光学会年会・放射光科学合同シンポジウム
- Data Source
  KAKENHI-PROJECT-16K17522
[Presentation] Ga-bilayer/GaN表面の X線CTR散乱測定2017
- Author(s)
  佐々木　拓生, 高橋　正光
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17522
[Presentation] 窒化ガリウム結晶成長表面のCTR散乱測定2017
- Author(s)
  佐々木　拓生, 高橋　正光
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-16K17522
[Presentation] GaN 上およびInN 上GaInN 成長における成長初期過程の観察2017
- Author(s)
  山口智広, 佐々木　拓生, 高橋　正光, 尾沼猛儀, 本田徹, 荒木努, 名西やすし
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17522
[Presentation] Strain Relaxation Analysis Using In-situ X-ray Reciprocal Space Mapping Measurements in RF-MBE Growth of GaInN2016
- Author(s)
  T. Yamaguchi, T. Sasaki, M. Takahasi, T. Honda, T. Onuma, Y. Nanishi
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya Congress Center
- Year and Date
  2016-08-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17522
[Presentation] その場放射光X線回折によるMBE成長窒化物半導体のひずみ緩和観測2016
- Author(s)
  佐々木拓生、出来亮太、石川史太郎、山口智広、高橋正光
- Organizer
  第63回応用物理学会秋季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス（東京都目黒区）
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-26790020
[Presentation] 窒化物半導体結晶成長の放射光その場X線回折2016
- Author(s)
  佐々木拓生、高橋正光
- Organizer
  第29回日本放射光学会
- Place of Presentation
  東京大学柏の葉キャンパス駅前サテライト（千葉県柏市）
- Year and Date
  2016-01-11
- Data Source
  KAKENHI-PROJECT-26790020
[Presentation] In situ studies of strain evolution iIn molecular beam epitaxial growth of GaN using synchrotron X-ray diffraction2015
- Author(s)
  Takuo Sasaki and Masamitu Takahasi
- Organizer
  第34回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖（滋賀県守山市）
- Year and Date
  2015-07-15
- Data Source
  KAKENHI-PROJECT-26790020
[Presentation] In situ synchrotron X-ray diffraction during GaN/SiC(0001) heteroepitaxy2015
- Author(s)
  Takuo Sasaki, Ryota Deki and Masamitu Takahasi
- Organizer
  第6回窒化物半導体結晶成長国際会議（ISGN-6)
- Place of Presentation
  アクトシティ浜松（静岡県浜松市）
- Year and Date
  2015-09-14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26790020
[Presentation] 窒化物半導体結晶成長の放射光その場X線回折2015
- Author(s)
  佐々木拓生、高橋正光
- Organizer
  第７回窒化物半導体結晶成長講演会
- Place of Presentation
  東北大学片平キャンパス（宮城県仙台市）
- Year and Date
  2015-05-08
- Data Source
  KAKENHI-PROJECT-26790020
[Presentation] Au触媒GaAsナノワイヤの構造多形メカニズム2015
- Author(s)
  佐々木拓生、出来亮太、高橋正光
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-26790020
[Presentation] X線小角散乱によるナノワイヤ成長中のAu触媒形状観測2014
- Author(s)
  佐々木拓生、出来亮太、高橋正光
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（札幌市北区）
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-26790020

1. Yamaguchi Tomohiro (50454517)

# of Collaborated Projects: 3 results

# of Collaborated Products: 13 results
2. 日比野浩樹 (60393740)

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results
3. 村上尚 (90401455)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
4. 林侑介 (00800484)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 上杉謙次郎 (40867305)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 宮本恭幸 (40209953)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 三宅秀人 (70209881)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 荒木努 (20312126)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 藤井高志 (60571685)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 出浦桃子 (90609299)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 富樫理恵 (50444112)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. Takahasi Masamitu

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results

Sasaki Takuo 佐々木 拓生

Research Projects

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Co-Researchers

Development of in-situ real-space X-ray observation technique for crystal growthPrincipal Investigator

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Study on three-dimensional lattice-matched epitaxy in nitride semiconductor crystal growth

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赤色発光素子応用に資するInGaNマトリクスの構造制御

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Development of GaN CMOS Monolithic Integrated Circuits Technology Using Crystal Hetero-Polarity Control

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Control of heterointerface region in the heteroepitaxial growth of In-based nitride semiconductors

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Development of free-standing nitride substrates using graphenePrincipal Investigator

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Development of dislocation propagation tracking method in nitride semiconductors by synchrotron micro-beam X-raysPrincipal Investigator

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Analysis of lattice strain and controlling of interfacial characteristics in heterostructured-nanowires by synchrotron X-raysPrincipal Investigator

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[Journal Article] Real-time observation of liquid-gallium ordering on epitaxially-grown GaN(0001) by X-ray scattering measurements2024

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[Journal Article] Temperature dependence of liquid-gallium ordering on the surface of epitaxially grown GaN2024

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[Journal Article] In-situ X-ray diffraction analysis of GaN growth on graphene-covered amorphous substrates2020

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[Journal Article] In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN2019

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[Journal Article] Real-time structural analysis of InGaAs/InAs/GaAs(1 1 1)A interfaces by in situ synchrotron X-ray reciprocal space mapping2019

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Data Source

[Journal Article] 放射光その場X線逆格子マッピングによる化合物半導体の結晶成長ダイナミクス2018

Author(s)

Journal Title

Sasaki Takuo 佐々木拓生