Adachi Masayoshi 安達正芳

… Alternative Names

ADACHI Masayoshi 安達正芳

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Researcher Number	90598913
Other IDs
Affiliation (Current)	2025: 東北大学, 多元物質科学研究所, 講師
Affiliation (based on the past Project Information) *help	2022 – 2023: 東北大学, 多元物質科学研究所, 講師 2012 – 2021: 東北大学, 多元物質科学研究所, 助教
Review Section/Research Field	Principal Investigator Medium-sized Section 30:Applied physics and engineering and related fields / Transformative Research Areas, Section (II) / Basic Section 30010:Crystal engineering-related / Applied physics and engineering and related fields / Crystal engineering / Metal making engineering Except Principal Investigator Medium-sized Section 26:Materials engineering and related fields
Keywords	Principal Investigator 窒化アルミニウム / 結晶成長 / 液相成長 / 気相成長 / エピタキシャル成長 / Ga-Alフラックス / バルクAlN単結晶 / 高温融体物性 / ガスジェット浮遊法 / 電磁浮遊法 … More / 非接触浮遊法 / 融体物性 / バルク結晶 / 液相成長法 / 電子・電気材料 / 蒸発 / 金属生産工学 / 結晶工学 / 融液熱物性 / 窒化アルニミウム / 結晶育成 … More Except Principal Investigator 計算計測融合 / ガス浮遊 / 浮遊測定法 / 表面張力 / 溶融金属 / 高温熱物性 / ガス浮遊法 / 数値流体力学 / 熱物性計測 / ガスジェット浮遊法 Less

バルクAlN結晶の低温気相成長法の開発Principal Investigator
- Principal Investigator
  
  安達正芳
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Tohoku University
Paradigm shift in measurement techniques for thermophysical properties of molten metal using simulation/experiment assimilation approach
- Principal Investigator
  
  Abe Yoshiaki
- Project Period (FY)
  2022 – 2023
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 26:Materials engineering and related fields
- Research Institution
  Tohoku University
High accuracy thermophysical property measurement for high temperature melts over a wide temperature range using levitation techniquesPrincipal Investigator
- Principal Investigator
  
  安達正芳
- Project Period (FY)
  2022 – 2023
- Research Category
  
  Grant-in-Aid for Transformative Research Areas (A)
- Review Section
  
  Transformative Research Areas, Section (II)
- Research Institution
  Tohoku University
Development of novel bulk AlN crystal growth method using Ni-Al solutionPrincipal Investigator
- Principal Investigator
  
  Adachi Masayoshi
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Tohoku University
Development of novel AlN crystal growth method using Al vapor generated from heated Ga-Al soluitonPrincipal Investigator
- Principal Investigator
  
  Adachi Masayoshi
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Research Field
  
  Applied physics and engineering and related fields
- Research Institution
  Tohoku University
Development of AlN growth technique using Ga-Al fluxPrincipal Investigator
- Principal Investigator
  
  Adachi Masayoshi
- Project Period (FY)
  2014 – 2017
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Crystal engineering
- Research Institution
  Tohoku University
Fabrication of single-crystalline AlN layer using a novel LPE technique and discussion of the growth mechanismPrincipal Investigator
- Principal Investigator
  
  ADACHI Masayoshi
- Project Period (FY)
  2012 – 2013
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Metal making engineering
- Research Institution
  Tohoku University

All 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 Other

All Journal Article Presentation Patent

[Journal Article] Temperature dependence of crystal growth behavior of AlN on Ni-Al using electromagnetic levitation and computer vision technique2023
- Author(s)
  Masayoshi Adachi , Sonoko Hamaya , Daisuke Morikawa , Benjamin G. Pierce , Ahmad M. Karimi , Yuji Yamagata , Kenji Tsuda , Roger H. French , Hiroyuki Fukuyama
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 153 Pages: 107167-107167
- DOI
  10.1016/j.mssp.2022.107167
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02633
[Journal Article] Synthesis of AlN single crystal by solution growth method using type 430 ferritic stainless steel flux2023
- Author(s)
  Li Sen、Adachi Masayoshi、Ohtsuka Makoto、Fukuyama Hiroyuki
- Journal Title
  
  AIP Advances
  
  Volume: 13 Issue: 8
- DOI
  10.1063/5.0161962
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21H04609, KAKENHI-PROJECT-20H02633
[Journal Article] In situ observations of the dissolution of an AlN film into liquid Al using a high-temperature microscope2022
- Author(s)
  Adachi Masayoshi、Fujiwara Keigo、Sekiya Ryuta、Kobatake Hidekazu、Ohtsuka Makoto、Fukuyama Hiroyuki
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 142 Pages: 106469-106469
- DOI
  10.1016/j.mssp.2022.106469
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02633
[Journal Article] Composition Dependence of Normal Spectral Emissivity of Liquid Ni–Al Alloys2021
- Author(s)
  Adachi Masayoshi、Yamagata Yuji、Watanabe Manabu、Hamaya Sonoko、Ohtsuka Makoto、Fukuyama Hiroyuki
- Journal Title
  
  ISIJ International
  
  Volume: 61 Issue: 3 Pages: 684-689
- DOI
  10.2355/isijinternational.ISIJINT-2020-233
- NAID
  130007999454
- ISSN
  0915-1559, 1347-5460
- Year and Date
  2021-03-15
- Language
  English
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02633
[Journal Article] In‐situ observation of AlN formation from Ni‐Al solution using an electromagnetic levitation technique2020
- Author(s)
  Adachi Masayoshi、Hamaya Sonoko、Yamagata Yuji、Loach Andrew J.、Fada Justin S.、Wilson Laura G.、French Roger H.、Carter Jennifer L. W.、Fukuyama Hiroyuki
- Journal Title
  
  Journal of the American Ceramic Society
  
  Volume: 103 Issue: 4 Pages: 2389-2398
- DOI
  10.1111/jace.16960
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K19067
[Journal Article] Non-Polar a-Plane AlN Growth on Nitrided r-Plane Sapphire by Ga-Al Liquid-Phase Epitaxy2018
- Author(s)
  Adachi Masayoshi、Fukuyama Hiroyuki
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 印刷中 Issue: 5
- DOI
  10.1002/pssb.201700478
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26706013
[Journal Article] Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy2017
- Author(s)
  Masaoyshi Adachi, Ryuta Sekiya, Hiroyuki Fukuyama
- Journal Title
  
  MATERIALS TRANSACTIONS
  
  Volume: 58 Issue: 3 Pages: 509-512
- DOI
  10.2320/matertrans.M2016413
- NAID
  130005397732
- ISSN
  1345-9678, 1347-5320
- Language
  English
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26706013
[Journal Article] Polarity inversion and growth mechanism of AlN layer grown on nitrided sapphire substrate using Ga-Al liquid-phase epitaxy2015
- Author(s)
  Masayoshi Adachi, Mari Takasugi, Masashi Sugiyama, Junji Iida, Akikazu Tanaka, and Hiroyuki Fukuyama
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 252 Issue: 4 Pages: 743-747
- DOI
  10.1002/pssb.201451426
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26706013
[Journal Article] Ga-Alフラックスを用いたAlNの液相エピタキシャル成長2014
- Author(s)
  福山博之，安達正芳
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 41 Pages: 124-130
- NAID
  130003388700
- Data Source
  KAKENHI-PROJECT-26706013
[Journal Article] High-quality AlN layer homoepitaxially grown on nitrided a-plane sapphire2013
- Author(s)
  Masayoshi Adachi, Kenji Tsuda, Masashi Sugiyama, Junji Iida, Akikazu Tanaka, and Hiroyuki Fukuyama
- Journal Title
  
  Applied Physics Express
  
  Volume: 6 Issue: 9 Pages: 91001-3
- DOI
  10.7567/apex.6.091001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24760611, KAKENHI-PROJECT-25630272
[Journal Article] Analysis of the Dislocation and polarity in an AlN layer grown using Ga-Al flux2012
- Author(s)
  Masayoshi Adachi, Mari Takasugi, Daisuke Morikawa, Kenji Tsuda, Akikazu Tanaka, Hiroyuki Fukuyama
- Journal Title
  
  Applied Physics express
  
  Volume: vol.5 Issue: 10 Pages: 101001-3
- DOI
  10.1143/apex.5.101001
- NAID
  40019455578
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24760611
[Patent] 窒化アルミニウム結晶の製造方法2013
- Inventor(s)
  大保安宏,杉山正史,飯田潤二,福山博之,安達正芳
- Industrial Property Number
  2013-111290
- Filing Date
  2013-05-27
- Data Source
  KAKENHI-PROJECT-24760611
[Patent] 窒化アルミニウム結晶の製造方法2013
- Inventor(s)
  福山博之,安達正芳,飯田潤二,杉山正史,大保安宏
- Industrial Property Number
  2013-261161
- Filing Date
  2013-12-18
- Data Source
  KAKENHI-PROJECT-24760611
[Patent] 窒化アルミニウム結晶の製造方法2013
- Inventor(s)
  福山博之,安達正芳,飯田潤二,杉山正史,大保安宏
- Industrial Property Number
  2013-156766
- Filing Date
  2013-07-29
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] 溶融Fe-Cr-Ni合金を用いた溶液成長法におけるAlN結晶の成長形態に及ぼす温度の影響2024
- Author(s)
  新野田剛, 安達正芳, 大塚誠, 福山博之
- Organizer
  日本金属学会2024年春期(第174回)講演大会
- Data Source
  KAKENHI-PROJECT-20H02633
[Presentation] 溶融Fe-Cr-Ni合金を用いた溶液成長法によるAlN結晶成長に及ぼす冷却速度の影響2024
- Author(s)
  大塚誠, 新野田剛, 安達正芳, 福山博之
- Organizer
  日本金属学会2024年春期(第174回)講演大会
- Data Source
  KAKENHI-PROJECT-20H02633
[Presentation] 電磁浮遊法を用いたTi-Nb合金融液の垂直分光放射率測定2023
- Author(s)
  安達正芳, 小笠原遼, 大塚誠, 福山博之
- Organizer
  日本金属学会2024年春期(第174回)講演大会
- Data Source
  KAKENHI-PUBLICLY-22H05271
[Presentation] Density and surface tension measurement of Ti-Nb melts using electromagnetic levitation technique2023
- Author(s)
  Ryo Ogasawara, Masayoshi Adachi, Makoto Ohtsuka, Hiroyuki Fukuyama
- Organizer
  22nd European Conference on Thermophysical Properties (ECPT2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-22H05271
[Presentation] Solution Growth of AlN single crystal in Fe-Cr flux2023
- Author(s)
  李森, 安達正芳, 大塚誠, 福山博之
- Organizer
  日本金属学会2023年秋期(第173回)講演大会
- Data Source
  KAKENHI-PROJECT-20H02633
[Presentation] 静磁場印加電磁浮遊法によるTi-Nb合金融体の密度測定2023
- Author(s)
  小笠原遼, 安達正芳, 大塚誠, 福山博之
- Organizer
  日本金属学会2023年春期(第172回)講演大会
- Data Source
  KAKENHI-PUBLICLY-22H05271
[Presentation] Thermophysical property measurement of Ti-Nb melts using electromagnetic levitation technique2023
- Author(s)
  Masayoshi Adachi, Ryo Ogasawara, Makoto Ohtsuka, Hiroyuki Fukuyama
- Organizer
  Creation of Materials by Super-Thermal Field (CMSTF2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-22H05271
[Presentation] Surface tension measurement of Cu2S-FeS melts by aerodynamic and electromagnetic levitation techniques2023
- Author(s)
  Masayoshi Adachi, Ryoya Masaoka, Masahito Watanabe, Makoto Ohtsuka, Jun-ichi Takahashi, Hiroyuki Fukuyama
- Organizer
  ECPT2023: 22nd European Conference on Thermophysical Properties
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18898
[Presentation] Ni-Alフラックス法によるAlNの結晶成長挙動に及ぼす坩堝材の影響2023
- Author(s)
  朴珉秀, 大塚誠, 安達正芳, 福山博之
- Organizer
  日本金属学会2023年春期(第172回)講演大会
- Data Source
  KAKENHI-PROJECT-20H02633
[Presentation] Synthesis of AlN Single Crystal by Solution Growth Method in SUS430 Flux2023
- Author(s)
  李森, 福山博之, 大塚誠, 安達正芳
- Organizer
  日本金属学会2023年春期(第172回)講演大会
- Data Source
  KAKENHI-PROJECT-20H02633
[Presentation] 電磁浮遊法によるTi-Nb合金融体の表面張力測定2023
- Author(s)
  小笠原遼, 安達正芳, 大塚誠, 福山博之
- Organizer
  日本金属学会2023年秋期(第173回)講演大会
- Data Source
  KAKENHI-PUBLICLY-22H05271
[Presentation] 溶融Fe-Cr-Ni合金におけるAlN溶解度積の熱力学的検討2023
- Author(s)
  新野田剛, 安達正芳, 大塚誠, 福山博之
- Organizer
  日本金属学会2023年秋期(第173回)講演大会
- Data Source
  KAKENHI-PROJECT-20H02633
[Presentation] Fabrication of AlN Single Crystal by Solution Growth Method using Ferritic Stainless Steel Flux2023
- Author(s)
  Sen LI, Masayoshi Adachi, Makoto Ohtsuka, Hiroyuki Fukuyama
- Organizer
  The 14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02633
[Presentation] Analysis of oscillation behavior of droplet in aerodynamic levitation2023
- Author(s)
  Shingo Ishihara, Yoshiaki Abe, Masayoshi Adachi
- Organizer
  ECPT2023: 22nd European Conference on Thermophysical Properties
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18898
[Presentation] Fe-Al 融液を原料とした針状 AlN 単結晶の気相成長における温度の影響2023
- Author(s)
  飴井千晃, 福山博之, 大塚誠, 安達正芳, 得地悠希
- Organizer
  日本金属学会2023年秋期(第173回)講演大会
- Data Source
  KAKENHI-PROJECT-23K17884
[Presentation] Surface tension and viscosity measurement of molten materials using aerodynamic levitation technique2023
- Author(s)
  Masayoshi Adachi, Masahito Watanabe, Hiroyuki Fukuyama
- Organizer
  International Conference on Materials Science and Engineering (Materials Oceania 2023)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18898
[Presentation] Development of a correction method for surface tension measured by aerodynamic levitation2022
- Author(s)
  Shingo Ishihara, Yoshiaki Abe, Masayoshi Adachi, Junya Kano
- Organizer
  the 13th Asian Thermophysical Properties Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18898
[Presentation] Surface tension measurement of copper matte melts using an aerodynamic levitation technique2022
- Author(s)
  Masayoshi Adachi, Masahito Watanabe, Makoto Ohtsuka, Jun-ichi Takahashi, Hiroyuki Fukuyama
- Organizer
  the 13th Asian Thermophysical Properties Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18898
[Presentation] 高温高反応性溶融金属の熱物性測定に向けたガス浮遊法の数値解析2022
- Author(s)
  阿部圭晃，石原真吾，安達正芳
- Organizer
  日本機械学会年会講演会
- Data Source
  KAKENHI-PROJECT-22K18898
[Presentation] Growth Behavior of AlN on AlN/Sapphire Substrates by Solution Growth Using Molten Ni-Al Alloy2022
- Author(s)
  Minsoo PARK, Makoto OHTSUKA, Masayoshi ADACHI, Hiroyuki FUKUYAMA
- Organizer
  日本金属学会2022年秋期(第171回)講演大会
- Data Source
  KAKENHI-PROJECT-20H02633
[Presentation] Effects of surface temperature on stability of aerodynamic levitation technique2022
- Author(s)
  Yoshiaki Abe, Masayoshi Adachi, Shingo Ishihara
- Organizer
  the 13th Asian Thermophysical Properties Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18898
[Presentation] AlN Growth Behavior on Ni-Al Liquid Solution2019
- Author(s)
  M. Adachi, S. Sonoko, A. Kanbara, L.G. Wilson, B.G. Pierce, A.M. Karimi, R.H. French, J.L.W. Carter, H. Fukuyama
- Organizer
  4th International Workshop on Ultraviolet Materials and Devices (IWUMD4)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K19067
[Presentation] Compositiondependence of normal spectral emissivity of liquid Ni-Al alloys measured by electromagnetic levitation technique2019
- Author(s)
  Masayoshi Adachi, Yuji Yamagata, Makoto Ohtsuka, Hiroyuki Fukuyama
- Organizer
  The 12th Interntional Workshop on Subsecond Thermophysics (IWSSTP-2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K19067
[Presentation] 電磁浮遊法を用いた溶融Ni-AlからのAlN生成とその観察2018
- Author(s)
  安達正芳，浜谷苑子，山片裕司，大塚誠，福山博之
- Organizer
  応用物理学会
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] In-Situ observation of liquid phase epitaxial growth of an AlN layer by optical microscopy2018
- Author(s)
  Masayoshi Adachi, Keigo Fujiwara, Hidekazu Kobatake, Makoto Ohtsuka, and Hiroyuki Fukuyama
- Organizer
  Twentieth Symposium on Thermophysical Properties
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K19067
[Presentation] 静磁場印加電磁浮遊法を用いた溶融Ni-Al合金からのAlN生成挙動観察2017
- Author(s)
  浜谷苑子，佐藤明香輪，安達正芳，福山博之
- Organizer
  日本金属学会春季講演大会
- Place of Presentation
  首都大学東京（東京都，八王子市）
- Year and Date
  2017-03-15
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] 静磁場印加電磁浮遊法を用いた溶融Ni-Al合金からのAlN生成挙動観察2017
- Author(s)
  浜谷苑子，佐藤明香輪，安達正芳，福山博之
- Organizer
  日本金属学会
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] a-plane AlN layer fabricated by Ga-Al liquid phase epitaxy on nitrided r-plane sapphire substrate with off-cut angle2017
- Author(s)
  Masayoshi Adachi, Hiroyuki Fukuyama
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] In-situ observation of AlN formation from Ni-Al melts2017
- Author(s)
  Sonoko Hamaya, Akari Sato, Masayoshi Adachi, Hiroyuki Fukuyama
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] AlN Crystal Growth Using Vaporized Al from Ga-Al flux with Nitrogen Injection2017
- Author(s)
  Keigo Takahashi, Masayoshi Adachi, Hiroyuki Fukuyama
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K19067
[Presentation] Ga-Al融液を用いたAlN結晶気相成長法における炉内圧力が結晶成長に及ぼす影響2017
- Author(s)
  高橋慧伍，安達正芳，福山博之
- Organizer
  日本金属学会春季講演大会
- Place of Presentation
  首都大学東京（東京都，八王子市）
- Year and Date
  2017-03-15
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Ga-Al融液を用いたAlN結晶気相成長法における炉内圧力が結晶成長に及ぼす影響2017
- Author(s)
  高橋慧伍，安達正芳，福山博之
- Organizer
  日本金属学会
- Data Source
  KAKENHI-PROJECT-17K19067
[Presentation] Liquid phase epitaxial growth of AlN layer on nitrided sapphire templates using Ga-Al solution2017
- Author(s)
  Masayoshi Adachi, Hiroyuki Fukuyama
- Organizer
  3rd Intensive Discussion on Growth of Nitride Semiconductors
- Place of Presentation
  東北大学（宮城県，仙台市）
- Year and Date
  2017-01-16
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Ga-Al液相法によるr面サファイア上へのa面AlN膜作製2016
- Author(s)
  安達正芳，福山博之
- Organizer
  応用物理学会　秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県，新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Surface nitridation of r-plane sapphire substrate and Ga-Al solution growth of AlN on the substrate2016
- Author(s)
  Masayoshi Adachi, Hiroyuki Fukuyama
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  名古屋国際会議場（愛知県，名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Ni-Al系溶融合金からのAlN生成挙動のその場観察2016
- Author(s)
  浜谷苑子，佐藤明香輪，安達正芳，福山博之
- Organizer
  日本金属学会秋季講演大会
- Place of Presentation
  大阪大学（大阪府，豊中市）
- Year and Date
  2016-09-21
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] r面サファイアの窒化によるa面AlN薄膜の形成とGa-Al液相法によるその厚膜化2016
- Author(s)
  安達正芳，福山博之
- Organizer
  日本結晶成長学会　ナノ構造エピタキシャル成長分科会　第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学（京都府，京都市）
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Ga-Al融液を原料とする減圧下でのAlN気相成長2016
- Author(s)
  高橋慧伍，安達正芳，福山博之
- Organizer
  日本金属学会秋季講演大会
- Place of Presentation
  大阪大学（大阪府，豊中市）
- Year and Date
  2016-09-21
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Fabrication of a-plane AlN on r-plane sapphire substrate by sapphire nitridation and Ga-Al liquid phase epitaxy2016
- Author(s)
  Masayoshi Adachi, Hiroyuki Fukuyama
- Organizer
  International Workshop on Nitride Semiconductors (IWN2016)
- Place of Presentation
  Orlando, Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Ga-Al 液相法を用いた窒化サファイア基板上へのAlN成長と極性反転2016
- Author(s)
  安達正芳
- Organizer
  日本鉄鋼協会　H27年度高温プロセス部会若手フォーラム研究会
- Place of Presentation
  東京都市大学（東京都，世田谷区）
- Year and Date
  2016-02-12
- Invited
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Nitrogen Solubility Measurement of Ga-Al Melts by a Chemical Equilibrium Method2016
- Author(s)
  Zaka Ruhma, 安達正芳，小畠秀和，福山博之
- Organizer
  日本金属学会秋季講演大会
- Place of Presentation
  大阪大学（大阪府，豊中市）
- Year and Date
  2016-09-21
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Ga-Alを用いたAlN液相成長における成長条件と成長速度2015
- Author(s)
  安達正芳，関谷竜太
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県，名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Wettability measurement of nitrided sapphire substrate by Ga-Al solution using a sessile drop method2015
- Author(s)
  Masayoshi Adachi, Kosuke Yasutake, Noritaka Saito, Kunihiko Nakashima, and Hiroyuki Fukuyama
- Organizer
  19th Symposium on Thermophysical Properties
- Place of Presentation
  Boulder, CO（USA）
- Year and Date
  2015-06-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Effects of growth temperature and solution composition on AlN layer grown by Ga-Al liquid phase epitaxy2015
- Author(s)
  Masayoshi Adachi, Ryuta Sekiya, and Hiroyuki Fukuyama
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
- Place of Presentation
  アクトシティ浜松（静岡県，浜松市）
- Year and Date
  2015-11-08
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Effect of misorientation angles of a-plane sapphire substrates on crystal quality and surface morphorogy of AlN film grown by nitridation method2015
- Author(s)
  Zaka Ruhma, Makoto Ohtsuka, Masayoshi Adachi, and Hiroyuki Fukuyama
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会　2015年春季講演大会　第7回窒化物半導体結晶成長講演会
- Place of Presentation
  東北大学（宮城県，仙台市）
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Ga-Al液相成長法により成長したAlNの極性反転構造2015
- Author(s)
  安達正芳，福山博之
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会　2015年春季講演大会　第7回窒化物半導体結晶成長講演会
- Place of Presentation
  東北大学（宮城県，仙台市）
- Year and Date
  2015-05-07
- Invited
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Al極性AlN膜基板上への低酸素分圧下におけるAlN膜液相成長2014
- Author(s)
  関谷竜太，安達正芳，大塚誠，福山博之
- Organizer
  日本金属学会　2014年春季講演大会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] 固液界面制御による単結晶AlN膜の結晶成長2014
- Author(s)
  福山博之,安達正芳
- Organizer
  日本金属学会
- Place of Presentation
  東京
- Year and Date
  2014-03-22
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Al極性AlN膜基板上への低酸素分圧下におけるAlN膜液相成長2014
- Author(s)
  関谷竜太,安達正芳,大塚誠,福山博之
- Organizer
  日本金属学会
- Place of Presentation
  東京
- Year and Date
  2014-03-22
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Al液相法を用いた窒化サファイア基板上AlN膜成長2014
- Author(s)
  安達正芳，福山博之，杉山正史，飯田潤二
- Organizer
  日本鉄鋼協会　第167回春季講演大会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Al液相法を用いた窒化サファイア基板上AlN膜成長2014
- Author(s)
  安達正芳,福山博之,杉山正史,飯田潤二
- Organizer
  日本鉄鋼協会
- Place of Presentation
  東京
- Year and Date
  2014-03-22
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] 固液界面制御による単結晶AlN膜の結晶成長2014
- Author(s)
  福山博之，安達正芳
- Organizer
  日本金属学会　2014春季講演大会
- Place of Presentation
  東京
- Invited
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Liquid phase epitaxial growth of AlN on nitrided sapphire substrate using Ga-Al solution2013
- Author(s)
  Masayoshi Adachi, Mari Takasugi, Masashi Sugiyama, Junji Iida, Akikazu Tanaka, Hiroyuki Fukuyama
- Organizer
  2013JSAP-MRS Joint Symposia
- Place of Presentation
  京都
- Year and Date
  2013-09-18
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Al液相成長法により成長したAlNの極性と成長メカニズム2013
- Author(s)
  安達正芳,高杉茉里,杉山正史,飯田潤二,田中明和,福山博之
- Organizer
  日本結晶成長学会ナノ構造エピタキシャル成長分科会
- Place of Presentation
  大阪
- Year and Date
  2013-06-21
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Alを用いたAlNの液相成長における結晶極性と成長機構2013
- Author(s)
  安達正芳，杉山正史，飯田潤二，田中明和，福山博之
- Organizer
  日本結晶成長学会　結晶成長国内会議
- Place of Presentation
  長野
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Al solution growth of high-quality AlN on nitrided a-plane sapphire2013
- Author(s)
  Masayoshi Adachi, Kenji Tsuda, Masashi Sugiyama, Junji Iida, Akikazu Tanaka, and Hiroyuki Fukuyama
- Organizer
  The Sixth Asia-Pacific Workshop on Widegap Semiconductors (APWS 2013)
- Place of Presentation
  Tamsui, Taiwan
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Alを用いたAlNの液相成長における結晶極性と成長機構2013
- Author(s)
  安達正芳,杉山正史,飯田潤二,田中明和,福山博之
- Organizer
  日本結晶成長学会
- Place of Presentation
  長野
- Year and Date
  2013-11-07
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Al液相法により成長したAlN膜の極性反転構造2013
- Author(s)
  安達正芳,津田健治,渡邊郁磨,杉山正史,飯田潤二,田中明和,福山博之
- Organizer
  応用物理学会
- Place of Presentation
  神奈川
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] 大気中熱処理によるa面サファイア基板の表面性状の変化と表面窒化に及ぼす影響2013
- Author(s)
  関谷竜太，安達正芳，大塚誠，福山博之
- Organizer
  日本金属学会　2013秋季講演大会
- Place of Presentation
  金沢
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Liquid phase epitaxial growth of AlN on nitirded sapphire substrate using Ga-Al solution2013
- Author(s)
  Masayoshi Adachi, Masashi Sugiyama, Junji Iida, Akikazu Tanaka, and Hiroyuki Fukuyama
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Alフラックスを用いたAlNの液相エピタキシャル成長法の開発2013
- Author(s)
  安達正芳，福山博之，杉山正史，飯田潤二，田中明和
- Organizer
  日本金属学会　2013秋季講演大会
- Place of Presentation
  金沢
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Al solution growth of high-quality AlN on nitrided a-plane sapphire2013
- Author(s)
  Masayoshi Adachi, Kenji Tsuda, Masashi Sugiyama, Junji Iida, Akikazu Tanaka, Hiroyuki Fukuyama
- Organizer
  The Sixth Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  台湾,淡水
- Year and Date
  2013-05-14
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Al液相法により成長したAlN膜の極性反転構造2013
- Author(s)
  安達正芳，津田健治，渡邊郁磨，杉山正史，飯田潤二，田中明和，福山博之
- Organizer
  2013年春季　第60回応用物理学会学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Polarity inversion and growth mechanism of AlN layer grown on nitrided sapphire using Ga-Al flux2013
- Author(s)
  Masayoshi Adachi,Mari Takasugi,Masashi Sugiyama, Junji Iida, Akikazu Tanaka, Hiroyuki Fukuyama
- Organizer
  10th International Conference on Nitrided Semiconductors
- Place of Presentation
  アメリカ,ワシントンDC
- Year and Date
  2013-08-28
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Growth of high quality AlN layer and its polarity control by LPE using Ga-Al flux2013
- Author(s)
  Hiroyuki Fukuyama, Masayoshi Adachi, Mari Takasugi, Masashi Sugiyama, Junji Iida, Akikazu Tanaka
- Organizer
  Photonics West-OPTO
- Place of Presentation
  アメリカ,サンフランシスコ
- Year and Date
  2013-02-04
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Growth of high quality AlN layer and its polarity control by LPE using Ga-Al flux2013
- Author(s)
  Hiroyuki Fukuyama, Masayoshi Adachi, Mari Takasugi, Masashi Sugiyama, Junji Iida, and Akikazu Tanaka
- Organizer
  Photonics West-OPTO
- Place of Presentation
  San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Polarity inversion and growth mechanism of AlN layer grown on nitrided sapphire using Ga-Al flux2013
- Author(s)
  Masayoshi Adachi, Mari Takasugi, Masashi Sugiyama, Junji Iida, Akikazu Tanaka, and Hiroyuki Fukuyama
- Organizer
  10th International Conference on Nitride Semiconductors
- Place of Presentation
  Washington, DC, USA
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] 大気中熱処理によるa面サファイア基板の表面性状の変化と表面窒化に及ぼす影響2013
- Author(s)
  関谷竜太,安達正芳,大塚誠,福山博之
- Organizer
  日本金属学会
- Place of Presentation
  金沢
- Year and Date
  2013-09-19
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Alフラックスを用いたAlNの液相エピタキシャル成長法の開発2013
- Author(s)
  安達正芳,福山博之,杉山正史,飯田潤二,田中明和
- Organizer
  日本金属学会
- Place of Presentation
  金沢
- Year and Date
  2013-09-19
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Al液相成長法により成長したAlNの極性と成長メカニズム2013
- Author(s)
  安達正芳，高杉茉里，杉山正史，飯田潤二，田中明和，福山博之
- Organizer
  日本結晶成長学会　ナノ構造・エピタキシャル成長分科会　2013春季講演会
- Place of Presentation
  大阪
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Alフラックスを用いた窒化a面サファイア基板上への高品質AlN成長2012
- Author(s)
  安達正芳,杉山正史,田中明和,福山博之
- Organizer
  応用物理学会
- Place of Presentation
  愛媛
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] High quality AlN layer homoepitaxially grown on nitrided a-plane sapphire using Ga-Al flux2012
- Author(s)
  Masayoshi Adachi, Masashi Sugiyama, Akikazu Tanaka, Hiroyuki Fukuyama
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  札幌
- Year and Date
  2012-10-18
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] High quality AlN layer homoepitaxially grown on nitrided a-plane sapphire using Ga-Al flux2012
- Author(s)
  Masayoshi Adachi, Masashi Sugiyama, Akikazu Tanaka, and Hiroyuki Fukuyama
- Organizer
  International Workshop on Nitride semiconductor (IWN)
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Al液相成長法を用いたAlN成長における酸素分圧の影響2012
- Author(s)
  高杉茉里，安達正芳，杉山正史，田中明和，福山博之
- Organizer
  2012年秋季　第73回応用物理学会学術講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Influence of oxygen partial pressure on the growth of aluminum nitride layer using Ga-Al flux2012
- Author(s)
  Mari Takasugi, Masayoshi Adachi, Masashi Sugiyama, Akikazu Tanaka, and Hiroyuki Fukuyama
- Organizer
  International Workshop on Nitride semiconductor (IWN)
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Effect of oxygen partial pressure on the growth of single-crystalline aluminum nitride layer using liquid phase epitaxy technique2012
- Author(s)
  Mari Takasugi, Masayoshi Adachi, Masashi Sugiyama, Akikazu Tanaka, Hiroyuki Fukuyama
- Organizer
  International Symposium on Growth of III-Nitrides
- Place of Presentation
  サンクトペテルブルグ,ロシア
- Year and Date
  2012-07-17
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Annealing effect for unification of in-plane domain in AlN layers grown from Ga-Al flux2012
- Author(s)
  Masayoshi Adachi, Masashi Sugiyama, Akikazu Tanaka, Hiroyuki Fukuyama
- Organizer
  International Symposium on Growth of III-Nitrides
- Place of Presentation
  サンクトペテルブルグ,ロシア
- Year and Date
  2012-07-17
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Effect of oxygen partial pressure on the growth of single-crystalline aluminum nitride layer using liquid phase epitaxy technique2012
- Author(s)
  Mari Takasugi, Masayoshi Adachi, Masashi Sugiyama, Akikazu Tanaka, and Hiroyuki Fukuyama
- Organizer
  International Symposium On Growth of III-Nitrides (ISGN)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Al液相成長法を用いたAlN成長における酸素分圧の影響2012
- Author(s)
  高杉茉里,安達正芳,杉山正史,田中明和,福山博之
- Organizer
  応用物理学会
- Place of Presentation
  愛媛
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Annealing effect for unification of in-plane domain in AlN layers grown from Ga-Al flux2012
- Author(s)
  Masayoshi Adachi, Masashi Sugiyama, Akikazu Tanaka, and Hiroyuki Fukuyama
- Organizer
  International Symposium On Growth of III-Nitrides (ISGN)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Influence of oxygen partial pressure on the growth of aluminum nitride layer using Ga-Al flux2012
- Author(s)
  Mari Takasugi, Masayoshi Adachi, Masashi Sugiyama, Akikazu Tanaka, Hiroyuki Fukuyama
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  札幌
- Year and Date
  2012-10-18
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Alフラックスを用いた窒化a面サファイア基板上への高品質AlN成長2012
- Author(s)
  安達正芳，杉山正史，田中明和，福山博之
- Organizer
  2012年秋季　第73回応用物理学会学術講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24760611
[Presentation] Ga-Alフラックスを用いた液相成長法による低酸素分圧下でのAl極性AlN膜の作製
- Author(s)
  関谷竜太，安達正芳，大塚誠，杉山正史，飯田潤二，福山博之
- Organizer
  応用物理学会　第75回秋季学術講演会
- Place of Presentation
  札幌
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Ga-Alフラックスを用いたAlN液相成長における炭素添加の影響
- Author(s)
  安達正芳，関谷竜太，杉山正史，飯田潤二，福山博之
- Organizer
  応用物理学会　第75回秋季学術講演会
- Place of Presentation
  札幌
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Ga-Alフラックス法を用いた窒化サファイア基板上AlN膜成長
- Author(s)
  安達正芳，福山博之
- Organizer
  ナノマクロ物質・デバイス・システム創製アライアンス　第2回若手研究交流会
- Place of Presentation
  大阪
- Year and Date
  2014-11-26 – 2014-11-27
- Invited
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Ga-Alフラックスを用いたAlN液相成長におけるフラックス組成の影響
- Author(s)
  関谷竜太，安達正芳，大塚誠，杉山正史，飯田潤二，福山博之
- Organizer
  日本結晶成長学会　ナノ構造エピタキシャル成長分科会　2014窒化物半導体結晶成長講演会
- Place of Presentation
  名古屋
- Year and Date
  2014-07-25 – 2014-07-26
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] 静滴法を用いた窒化サファイア基板のGa-Al融液に対する濡れ角測定
- Author(s)
  安達正芳，安武晃佑，齊藤敬高，中島邦彦，杉山正史，飯田潤二，福山博之
- Organizer
  応用物理学会　第62回春季学術講演会
- Place of Presentation
  神奈川
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] 窒化サファイア基板上Alスパッタ膜の高温窒化挙動のその場観察
- Author(s)
  藤原圭吾，安達正芳，大塚誠，福山博之
- Organizer
  日本金属学会 2014年秋季講演大会
- Place of Presentation
  名古屋
- Year and Date
  2014-09-24 – 2014-09-26
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Ga-Alを用いたAlN液相成長における酸素取り込みと極性反転
- Author(s)
  安達正芳，杉山正史，飯田潤二，福山博之
- Organizer
  結晶成長学会　第44回結晶成長国内会議
- Place of Presentation
  東京
- Year and Date
  2014-11-06 – 2014-11-08
- Invited
- Data Source
  KAKENHI-PROJECT-26706013
[Presentation] Growth model of AlN layer on nitrided sapphire substrate by liquid phase epitaxy using Ga-Al solution
- Author(s)
  Ryuta Sekiya, Mari Takasugi, Masayoshi Adachi, Makoto Ohtsuka, Masashi Sugiyama, Junji Iida, Hiroyuki Fukuyama
- Organizer
  International Workshop on Nitride Semiconductors (IWN2014)
- Place of Presentation
  Wrockawm, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-26706013

1. Abe Yoshiaki (40785010)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
2. 石原真吾 (40760301)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
3. 大塚誠

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
4. 福山博之

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Adachi Masayoshi 安達 正芳

ADACHI Masayoshi 安達 正芳

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バルクAlN結晶の低温気相成長法の開発Principal Investigator

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Paradigm shift in measurement techniques for thermophysical properties of molten metal using simulation/experiment assimilation approach

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High accuracy thermophysical property measurement for high temperature melts over a wide temperature range using levitation techniquesPrincipal Investigator

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Development of novel bulk AlN crystal growth method using Ni-Al solutionPrincipal Investigator

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Development of novel AlN crystal growth method using Al vapor generated from heated Ga-Al soluitonPrincipal Investigator

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Development of AlN growth technique using Ga-Al fluxPrincipal Investigator

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Fabrication of single-crystalline AlN layer using a novel LPE technique and discussion of the growth mechanismPrincipal Investigator

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[Journal Article] Temperature dependence of crystal growth behavior of AlN on Ni-Al using electromagnetic levitation and computer vision technique2023

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[Journal Article] Synthesis of AlN single crystal by solution growth method using type 430 ferritic stainless steel flux2023

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[Journal Article] In situ observations of the dissolution of an AlN film into liquid Al using a high-temperature microscope2022

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[Journal Article] Composition Dependence of Normal Spectral Emissivity of Liquid Ni–Al Alloys2021

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[Journal Article] In‐situ observation of AlN formation from Ni‐Al solution using an electromagnetic levitation technique2020

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[Journal Article] Non-Polar a-Plane AlN Growth on Nitrided r-Plane Sapphire by Ga-Al Liquid-Phase Epitaxy2018

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Adachi Masayoshi 安達正芳

ADACHI Masayoshi 安達正芳