MA BEI ＭＡＢＥＩ

… Alternative Names

Bei Ma 馬ベイ

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Researcher Number	90718420
Other IDs
Affiliation (Current)	2025: 千葉大学, 大学院工学研究院, 助教
Affiliation (based on the past Project Information) *help	2024 – 2025: 千葉大学, 大学院工学研究院, 助教 2017 – 2020: 千葉大学, 大学院工学研究院, 助教 2016: 千葉大学, 大学院工学研究科, 助教
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Crystal engineering Except Principal Investigator Crystal engineering / Basic Section 30010:Crystal engineering-related / Science and Engineering
Keywords	Principal Investigator ダイナミクス / キャリア / 励起子 / ラマン / LOPC / GaN / 半導体 / 窒化物 / フォノン Except Principal Investigator 光物性 … More / 格子欠陥 / 半導体物性 / フォノンダイナミクス / ラマン分光 / 励起子 / LOフォノン / キャリアダイナミクス / 窒化物半導体 / フォノン制御 / フォノン / 縦光学フォノン制御 / 電子散乱 / 発光効率 / テラヘルツ波 / 縦光学フォノン / 電気双極子 / フォノンポラリトン / 金属半導体複合構造 / ファノ効果 / 電磁誘起透明化 / LOフォノン共鳴 / 輻射 / 中赤外 / THz / 量子干渉 / THz吸収 / 界面フォノンポラリトン / THz発光 / フォノン局在制御 / 時間分解計測 / 時間分解PL / 発光デバイス / 太陽電池 / 量子井戸 / 結晶工学 / 結晶欠陥 / フォノンエンジニアリング / 欠陥評価 / 欠陥構造 / エネルギー局在 / 複合材料 / ミスフィット転位 / 共焦点ラマン散乱 / 表面マイクロ構造 / ２波長ラマン分光 / 深い準位 / 赤外分光 / ラマン散乱 / 特異構造 / 励起子ダイナミクス / 中赤外発光 / GaN / フォノン輸送 / 縦光学モード / THz輻射 / 顕微ラマン分光 / 励起子ダイダイナミクス Less

多波長ラマン分光によるAlGaN系HEMTの界面に着目したフォノン解析及び制御Principal Investigator
- Principal Investigator
  
  MA BEI
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Chiba University
Integrated control of optical and acoustic phonons for an inovative design of photonic and electronic devices
- Principal Investigator
  
  石谷善博
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Chiba University
Development of three dimensional spectroscopy of crystal singularity and defects and its application based on phonon science
- Principal Investigator
  
  Ishitani Yoshihiro
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Chiba University
Proposal of improving energy conversion efficiency of solar cell by phonon confinementPrincipal Investigator
- Principal Investigator
  
  MA BEI
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Chiba University
Study on THz light source using quantum interference in phonon system
- Principal Investigator
  
  Yoshihiro Ishitani
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Chiba University
Advanced research on semiconductor optical device materials by controlling phonon transport under non-thermal equilibrium state
- Principal Investigator
  
  Ishitani Yoshihiro
- Project Period (FY)
  2013 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Chiba University

All 2021 2020 2019 2018 2017 2016 2015 2014 2013 Other

All Journal Article Presentation

[Journal Article] Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation2020
- Author(s)
  D. Uehara, M. Kikuchi, B. Ma, H. Miyake, Y. Ishitani
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 6 Pages: 061003-061003
- DOI
  10.35848/1882-0786/ab8c1c
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06425
[Journal Article] Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN2020
- Author(s)
  Ma Bei、Tang Mingchuan、Ueno Kohei、Kobayashi Atsushi、Morita Ken、Fujioka Hiroshi、Ishitani Yoshihiro
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 19 Pages: 192103-192103
- DOI
  10.1063/5.0023112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414, KAKENHI-PLANNED-16H06425
[Journal Article] Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation2020
- Author(s)
  Uehara Daisuke, Kikuchi Moe, Ma Bei, MIYAKE Hideto, Ishitani Yoshihiro
- Journal Title
  
  Applied Physics Express
  
  Volume: Undecided
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06425
[Journal Article] Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers2020
- Author(s)
  Shungo Okamoto, Naomichi Saito, Kotaro Ito, Bei Ma, Ken Morita , Daisuke Iida, Kazuhiro Ohkawa, and　Yoshihiro Ishitani,
- Journal Title
  
  Applied Physics Letters,
  
  Volume: 116 Issue: 14 Pages: 142107-142107
- DOI
  10.1063/5.0003491
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02772, KAKENHI-PLANNED-16H06425
[Journal Article] Local heat energy transport analysis in GaInN/GaN heterostructures by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams2020
- Author(s)
  Shungo Okamoto, Naomichi Saito, Kotaro Ito, Bei Ma, Ken Morita, Daisuke Iida, Kazuhiro Ohkawa, Yoshihiro Ishitani
- Journal Title
  
  IPACK2020-2570
  
  Volume: V001T06A002
- DOI
  10.1115/ipack2020-2570
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06425
[Journal Article] Investigation of the electron-phonon interactions around Ga vacancies in GaN and their role in the first stage of defect reactions2019
- Author(s)
  Masato Oda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 未定
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06425
[Journal Article] Electronic structure of (ZnO)1?x (InN) x alloys calculated by interacting quasi-band theory2019
- Author(s)
  Furuki Ryota、Oda Masato、Shinozuka Yuzo
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 2 Pages: 0210021-8
- DOI
  10.7567/1347-4065/aaf56f
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17K05498, KAKENHI-PLANNED-16H06425, KAKENHI-PUBLICLY-17H05339
[Journal Article] Enhanced photocurrent in InGaN/GaN MQWs solar cells by coupling　plasmonic with piezo-phototronic effect2019
- Author(s)
  3.Chunyan Jiang, Yan Chen, Jiangman Sun, Liang Jing, Mengmeng Liu, Ting Liu,Yan Pan, Xiong Pu, Bei Ma, Weiguo Hu, Zhong Lin Wang
- Journal Title
  
  Nano Energy
  
  Volume: 57 Pages: 300-306
- DOI
  10.1016/j.nanoen.2018.12.036
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Journal Article] Electric-dipole absorption resonating with longitudinal optical phonon;-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures2017
- Author(s)
  Hironori Sakamoto, Eito Takeuchi, Kouki Yoshida, Ken Morita, Bei Ma, and Yoshihiro Ishitani
- Journal Title
  
  Journal of Physics D
  
  Volume: 51
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K13345
[Journal Article] Electric-dipole absorption resonating with longitudinal optical phonon-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structure2017
- Author(s)
  Hironori Sakamoto, Eito Takeuchi, Kouki Yoshida, Ken Morita, Bei Ma, and Yoshihiro Ishitani
- Journal Title
  
  Journal of Physics D
  
  Volume: 51
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K17511
[Journal Article] Population decay and distribution of exciton states analyzed by rate equations based on theoretical phononic and electron-collisional rate coefficients2017
- Author(s)
  Kensuke Oki, Bei Ma, and Yoshihiro Ishitani
- Journal Title
  
  Physical Review B
  
  Volume: 96 Issue: 20
- DOI
  10.1103/physrevb.96.205204
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K17511, KAKENHI-PLANNED-16H06425, KAKENHI-PROJECT-17H02772
[Journal Article] Electric-dipole absorption resonating with longitudinal optical phonon-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures2017
- Author(s)
  Hironori Sakamoto, Eito Takeuchi, Kouki Yoshida, Ken Morita, Bei Ma, and Yoshihiro Ishitani
- Journal Title
  
  Journal of Physics D
  
  Volume: 51
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06425
[Journal Article] Excitation and de-excitation dynamics of excitons in a GaN film based on the analysis of radiation from high-order states2016
- Author(s)
  Yoshihiro Ishitani, Kazuma Takeuchi, Naoyuki Oizumi, Hironori Sakamoto, Bei Ma, and Ken Morita, Hideto Miyake, and Kazumasa Hiramatsu
- Journal Title
  
  Journal of Physics D
  
  Volume: 49 Issue: 24 Pages: 245102-245102
- DOI
  10.1088/0022-3727/49/24/245102
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-16K17511, KAKENHI-PLANNED-16H06415
[Journal Article] Raman study of the quantum interference of multiple discrete states and a continuum of states in the phonon energy region of semiconductors: examples of p-type Ga0.5In0.5P films2016
- Author(s)
  Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
- Journal Title
  
  Journal of Physics D
  
  Volume: 49 Issue: 37 Pages: 375107-375107
- DOI
  10.1088/0022-3727/49/37/375107
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06425, KAKENHI-PROJECT-16K17511
[Journal Article] Interacting quasi-band model for electronic states in compound semiconductor alloys:Wurtzite structure2016
- Author(s)
  Ayaja Kishi, Masato Oda, and Yuzo Shinozuka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5 Pages: 051202-051202
- DOI
  10.7567/jjap.55.051202
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286048
[Journal Article] Raman study of the quantum interference of multiple discrete states and a continuum of states in the phonon energy region of semiconductors: examples of p-type Ga0.5In0.5P films2016
- Author(s)
  Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
- Journal Title
  
  Journal of Physics D
  
  Volume: 49
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13345
[Journal Article] Depth profile characterization technique of electron density in GaN films by infrared reflection spectra2016
- Author(s)
  Takaaki Kamijoh, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FH02-05FH02
- DOI
  10.7567/jjap.55.05fh02
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-15K13345, KAKENHI-PROJECT-16K17511
[Journal Article] Theoretical investigation of non-thermal equilibrium exciton dynamics in GaN based on hydrogen plasma model2016
- Author(s)
  Tomohiro Iwahori, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FM06-05FM06
- DOI
  10.7567/jjap.55.05fm06
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-16K17511
[Journal Article] Dielectric absorption of s-polarized infrared light resonant to longitudinal optical phonon energy incident on lateral (0001)GaN/Ti stripe structures2015
- Author(s)
  Y. Ishitani, K. Hatta, K. Morita, and B. Ma
- Journal Title
  
  Journal of Physics D
  
  Volume: 48
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286048
[Journal Article] Interacting quasi-band model for electronic states in compound semiconductor alloys: Zincblende structure2015
- Author(s)
  Yuzo Shinozuka and Masato Oda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 9 Pages: 091202-091202
- DOI
  10.7567/jjap.54.091202
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286048
[Journal Article] Nonradiative coherent carrier captures and defect reaction at deep-level defects via2014
- Author(s)
  Masaki Wakita, Kei Suzuki, and Yuzo Shinozuka
- Journal Title
  
  AIP Conference Proceedings
  
  Volume: 1583 Pages: 204-204
- DOI
  10.1063/1.4865636
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286048
[Journal Article] Analysis of nouradiative carrier recombination processes in InN films by mid-infrared spectroscopy2013
- Author(s)
  Daichi Imai, Yoshihiro Ishitani, Masayuki Fujiwra, X. Q. Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
- Journal Title
  
  Journal of Electronic Materials
  
  Volume: 42 Issue: 5 Pages: 875-881
- DOI
  10.1007/s11664-013-2550-y
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13J04851, KAKENHI-PROJECT-23246056, KAKENHI-PROJECT-25286048
[Journal Article] RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN2013
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, H. Yaguchi, K. Onabe
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 378 Pages: 307-309
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Analysis of LO phonon properties in III-nitrides: interaction with carriers and microscopic analysis2021
- Author(s)
  Y. Ishitani, K. Oki, M. Chizaki, S. Okamoto, T. Nakayama, B. Lin, B. Ma, K. Morita, H. Miyake , D. Iida , and K. Ohkawa
- Organizer
  SPIE, Photonic West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Characterization of heavily sillion doped GaN using infrared reflectance and Raman spectroscopy2021
- Author(s)
  Bei Ma, Mingchuan Tang, Kohei Ueno, Atsushi Kobayashi, Ken Morita, Hiroshi Fujioka, and Yoshihiro Ishitani
- Organizer
  8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Requirement of phonon control in electronic and photonic devices and mode-separated phonon transport analysis in heterostructures using microscopic Raman scattering measurement using double lasers2021
- Author(s)
  Y. Ishitani, S. Okamoto, M. Chizaki, K. Oki, B. Ma, B.-J. Lin, K. Morita, D. Iida, and K. Ohkawa
- Organizer
  8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Raman scattering of Si-doped GaN film at cross-section2021
- Author(s)
  Bei Ma, Mingchuan Tang, Kohei Ueno, Atsushi Kobayashi, Ken Morita, Hiroshi Fujioka, and Yoshihiro Ishitani
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Longitudinal Optical Phonon Resonant THz- Mid Infrared Radiation from Surface Metal-Semiconductor Microstructures2021
- Author(s)
  Y. Ishitani, Bei Ma, Kensuke Oki, Ken Morita
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Structure dependence of LO phonon radiation using GaAs/metal microstructure stripe structures2020
- Author(s)
  Hnin Lai Lai Aye, K. Hayashi, B. Ma, K. Morita, and Y. Ishitani
- Organizer
  第68回　応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 間接遷移半導体GaP表面マイクロメサストライプ構造における中赤外吸収・輻射スペクトル解析2020
- Author(s)
  林鴻太朗, 関川康太, 折戸春樹, 相原望, 馬ベイ, 森田健, 石谷善博
- Organizer
  第68回　応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Longitudinal Optical Phonon Resonant THz -Mid Infrared Radiation From Surface Metal-Semiconductor Microstructures2020
- Author(s)
  K. Hayashi, D. Tanaka, K. Ebisawa, N. Aihara, T. Yonemoto, H. L. L. Aye, B. Lin, B. Ma, K. Morita, and Y. Ishitani
- Organizer
  IRMMW-THz
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 輻射性励起子減衰寿命の温度依存性への非輻射再結合の影響2020
- Author(s)
  地﨑匡哉，大木健輔，馬ベイ，森田健，石谷善博
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaInN薄膜における膜内フォノン輸送過程の2波長同時照射ラマン分光法による解析2020
- Author(s)
  中山朋哉，伊藤航太郎，岡本駿吾，馬ベイ, 森田健,飯田大輔，大川和宏,石谷善博
- Organizer
  第68回　応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] LO phonon resonant mid-IR emission from surface-metal structures on indirect electronic transition type semiconductors2020
- Author(s)
  K. Hayashi, N. Orito, K. Sekigawa, N. Aihara, M. Bei, K. Morita, Y. Ishitani
- Organizer
  フォノンエンジニアリング研究会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Analysis of phonon transport at GaInN/GaN heterointerfaces by Raman spectroscopy using simultaneous irradiation of two lasers2020
- Author(s)
  S. Okamoto, K. Ito, D. Iizasa, B. Ma, K. Morita, Y. Ishitani
- Organizer
  フォノンエンジニアリング研究会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 高SiドープGaN薄膜の断面ラマン測定2020
- Author(s)
  馬ベイ，湯明川，森田健，上野耕平，小林篤，藤岡洋，石谷善博
- Organizer
  第68回　応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] ｎ型間接遷移半導体GaP表面マイクロストライプ構造による中赤外輻射2020
- Author(s)
  林鴻太朗, 田中大智, 海老澤啓介, 相原　望, 米本拓郎，Hnin Lai Lai Aye, 森田　健, 馬　ベイ, 石谷善博
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] n型間接遷移半導体GaP表面マイクロストライプ構造における中赤外吸収・輻射スペクトル解析2020
- Author(s)
  林鴻太朗, 相原望, 森田健, 馬ベイ, 石谷善博
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Local heat energy transport analysis in GaInN/GaN heterostructure by microscopic imaging exploiting simultaneous irradiation of two laser beams2020
- Author(s)
  S. Okamoto, N. Saito, K. Ito, B. Ma, K. Morita, D. Iida, K. Ohkawa, Y. Ishitani
- Organizer
  InterPack2020
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] unctional metal-GaN micro-stripe structures for infrared and ultraviolet regions2019
- Author(s)
  Tsubasa Yamakawa, Bojin Lin, Kensuke Oki, Bei Ma, Ken Morita, Yusuke Hayashi, Hideto Miyake, Kazuhiro Ohkawa
- Organizer
  International Conference on Nitride Semiconductors-13
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaNの深い準位の直接光励起による発光特性の考察2019
- Author(s)
  菊地　萌，上原大輔，馬ベイ, 森田健,三宅秀人，石谷善博
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaN,AlN,ZnOにおける励起子の非熱平衡解析2019
- Author(s)
  大木健輔，野町健太郎，西川智秀，馬ベイ，森田健，石谷善博
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 赤外及びラマン分光法による高密度SiドープGaN薄膜の評価2019
- Author(s)
  馬ベイ, 湯明川, 上野耕平, 小林篤, 藤岡洋, 石谷善博
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 価電子帯間遷移－2種LOフォノン系における量子干渉の理論解析2019
- Author(s)
  相原望，田中大智，森田健，馬ベイ，石谷善博
- Organizer
  第3回フォノンエンジニアリング研究会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Local phonon analysis in InGaN film by mapping of Raman spectroscopy2019
- Author(s)
  Shungo Okamoto, Naomichi Saito, Bei Ma, Kensuke Oki, and Ken Morita, Kazuhiro Ohkawa, and Yoshihiro Ishitani
- Organizer
  Compound Semiconductor Week
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Analysis of emission characteristics of deep levels in GaN by direct photo excitation2019
- Author(s)
  Moe Kikuchi, Daisuke Uehara, Bei Ma, Ken Morita, Hideto Miyake, and Yoshihiro Ishitani
- Organizer
  Compound Semiconductor Week
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 2LOフォノン-価電子帯間電子遷移系量子干渉の理論解析2019
- Author(s)
  相原　望，田中大智，馬　ベイ，森田　健，石谷善博
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaN,AlN,ZnOにおける励起子の非熱平衡解析2019
- Author(s)
  大木健輔，野町健太郎，西川智秀，馬ベイ，森田健，石谷善博
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Deep level luminescence of HVPE grown GaN by below-bandgap photo-excitation2019
- Author(s)
  Daisuke Uehara, Moe Kikuchi, Bei Ma, Ken Morita, Hideto Miyake, and Yoshihiro Ishitani
- Organizer
  International Conference on Nitride Semiconductors-13
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] aAs-金属ストライプ構造からのLOフォノン共鳴赤外輻射特性の構造依存性2019
- Author(s)
  海老澤啓介，田中大智，森田健，馬ベイ，石谷善博
- Organizer
  第3回フォノンエンジニアリング研究会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] ２波長ラマン分光を用いたフォノン輸送評価における測定モード依存性2019
- Author(s)
  岡本駿吾，伊藤航太郎，馬ベイ，森田健，飯田大輔，大川和宏，石谷善博
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Microscopic analysis of heat transport at GaInN/GaN heterointerface with misfit dislocations by two-wavelength Raman measurements2019
- Author(s)
  Shungo Okamoto, Bei Ma, Ken Morita, Daisuke Iida, Kazuhiro Ohkawa, and Yoshihiro Ishitani
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 濃度SiドープGaNの深さ方向結晶性の赤外およびラマン分光評価2019
- Author(s)
  湯　明川，馬ベイ，森田健,上野耕平,小林　篤，藤岡洋，石谷善博
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaAs-金属ストライプ構造からのLOフォノン共鳴赤外輻射特性の構造依存性2019
- Author(s)
  海老澤啓介，馬ベイ，森田健，大木健輔，石谷善博
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaNの深い準位の直接光励起による発光特性の考察2019
- Author(s)
  菊地萌，上原大輔，馬ベイ, 森田健, 三宅秀人，石谷善博
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Analysis of highly Si-doped GaN using various lattice vibration modes observed by infrared and Raman spectroscopy2019
- Author(s)
  Bei Ma, Ming Chuan Tang, Ken Morita, Yoshihiro Ishitani, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka,
- Organizer
  International Conference on Nitride Semiconductors-13
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Longitudinal Optical Phonon Resonating Dipole Radiation from Metal- Semiconductor Composite Structures and Quantum Interference2019
- Author(s)
  Yoshihiro Ishitani, Keisuke Ebisawa, Daichi Tanaka, Nozomi Aihara, Bei Ma, and Ken Morita
- Organizer
  IRMMW-THz 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] LOフォノン-価電子帯間遷移の量子干渉による結晶評価2019
- Author(s)
  相原望, 田中大智, 森田健, 馬ベイ, 石谷善博
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 高濃度SiドープGaNの深さ方向結晶性の赤外およびラマン分光評価2019
- Author(s)
  湯明川，馬ベイ, 森田健, 上野耕平, 小林篤，藤岡洋，石谷善博
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] GaAs/Auストライプ構造を用いたLOフォノン共鳴の赤外光輻射2018
- Author(s)
  青木伴晋，花田昂樹，坂本裕則，馬ベイ，森田健，石谷善博
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 半導体/金属ストライプ構造における電気双極子形成に伴う誘電関数変化2018
- Author(s)
  坂本裕則，馬ベイ, 森田健, 石谷善博
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] フォノンプロセスを考慮した励起子ダイナミクス解析（PXRモデル）2018
- Author(s)
  石谷善博，大木健輔，野町健太郎，馬ベイ，森田健
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] ワイドギャップ半導体キャリア・フォノンダイナミクス2018
- Author(s)
  石谷善博，大木健輔，野町健太郎，馬ベイ，森田健
- Organizer
  第13回励起ナノプロセス研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Statistics of excitonic energy states based on phonon-exciton-radiation model2018
- Author(s)
  Yoshihiro Ishitani, Kensuke Oki, Tsubasa Yamakawa, Bojin Lin, Bei Ma, and Ken Morita
- Organizer
  International Workshop on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Migration Energy of a N Atom around Ga Vacancy in GaN2018
- Author(s)
  Masato Oda
- Organizer
  7th International Symposium on Growth of III-Nitrides
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Interactions of phonon, electron, and photon in nitride semiconductors2018
- Author(s)
  Yoshihiro Ishitani, Kensuke Oki, Naomichi Saito, Tsubasa Yamakawa, Daisuke Uehara, Shungo Okamoto, Moe Kikuchi, Keisuke Ebisawa, Bojin Lin, Bei Ma, and Ken Morita
- Organizer
  Intensive Discussion on Growth of Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Electronic Structures of a NGa-VN complex defect in GaN2018
- Author(s)
  Masato Oda
- Organizer
  International Workshop on Nitride Semiconductor
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] ワイドギャップ半導体における励起子-フォノン系の非熱平衡解析2018
- Author(s)
  大木健輔, 馬ベイ, 森田健, 石谷善博
- Organizer
  第２回フォノンエンジニアリング研究会
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] 半導体/金属ストライプ構造における電気双極子形成に伴う誘電関数変化2018
- Author(s)
  坂本裕則、馬ベイ、森田健、石谷善博
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] ワイドギャップ半導体キャリア・フォノンダイナミクス2018
- Author(s)
  石谷善博，大木健輔，野町健太郎，馬ベイ，森田健
- Organizer
  第13回励起ナノプロセス研究会
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] GaN,AlN,ZnOにおける励起子の非熱平衡解析2018
- Author(s)
  大木健輔、野町健太郎、西川智秀、馬ベイ、森田健、石谷善博
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Phonon modes Analysis of AlN/InN Superlattice2018
- Author(s)
  Yoshihiro Ihira and Masato Oda
- Organizer
  International Workshop on Nitride Semiconductor
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 半導体/金属ストライプ構造における電気双極子形成に伴う誘電関数変化2018
- Author(s)
  坂本裕則，馬ベイ，森田健, 石谷善博
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Interactions of phonon, electron, and photon in nitride semiconductors2018
- Author(s)
  Yoshihiro Ishitani, Kensuke Oki, Naomichi Saito, Tsubasa Yamakawa, Daisuke Uehara, Shungo Okamoto, Moe Kikuchi, Keisuke Ebisawa, Bojin Lin, Bei Ma, and Ken Morita
- Organizer
  Intensive Discussion on Growth of Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 赤外分光法によるGaNの高電子密度層の空間分布評価2018
- Author(s)
  湯明川,　馬ベイ,　森田健,　石谷善博
- Organizer
  テラヘルツ科学の最先端V
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaN,AlN,ZnOにおける励起子の非熱平衡解析2018
- Author(s)
  大木健輔、野町健太郎、西川智秀、馬ベイ、森田健、石谷善博
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] 赤外分光法によるGaNの高電子密度層の空間分布評価2018
- Author(s)
  湯明川,　馬ベイ,　森田健,　石谷善博
- Organizer
  テラヘルツ科学の最先端V
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Statistics of excitonic energy states based on phonon-exciton-radiation model2018
- Author(s)
  Yoshihiro Ishitani, Kensuke Oki, Tsubasa Yamakawa, Bojin Lin, Bei Ma, and Ken Morita
- Organizer
  International Workshop on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Electronic structure of (ZnO)1-x(InN)x alloys calculated using IQB theory2018
- Author(s)
  Ryota Furuki, Masato Oda, and Yuzo Shinozuka
- Organizer
  Compound Semiconductor Week 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] フォノンプロセスを考慮した励起子ダイナミクス解析（PXRモデル）2018
- Author(s)
  石谷善博、大木健輔、野町健太郎、馬ベイ、森田健
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] ラマン散乱マッピングによるInGaNの局所フォノン場評価2018
- Author(s)
  齋藤直道, 瀧口佳祐, 馬ベイ, 森田健, 飯田大輔, 大川和宏, 石谷善博
- Organizer
  第79回応用物理学会秋季学術講演会名古屋国際会議場
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] ラマン散乱マッピングによるInGaNの局所フォノン場評価2018
- Author(s)
  齋藤直道, 瀧口佳祐, 馬ベイ, 森田健, 飯田大輔, 大川和宏, 石谷善博
- Organizer
  第７９回応用物理学会秋季学術講演会名古屋国際会議場
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaAs/Auストライプ構造を用いたLOフォノン共鳴の赤外光輻射2018
- Author(s)
  青木伴晋、花田昂樹、坂本裕則、馬ベイ、森田健、石谷善博
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] ワイドギャップ半導体における励起子-フォノン系の非熱平衡解析2018
- Author(s)
  大木健輔,　馬ベイ,　森田健,　石谷善博
- Organizer
  第２回フォノンエンジニアリング研究会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaNにおける励起子及び自由キャリアの密度とレート係数の理論計算2017
- Author(s)
  大木健輔, 野町健太郎, 馬ベイ, 森田健, 石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaNにおける定常状態励起子分子準位間遷移過程理論計算2017
- Author(s)
  野町健太郎，大木健輔，馬ベイ，森田健，石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] GaNにおける定常状態励起子分子準位間遷移過程理論計算2017
- Author(s)
  野町健太郎, 大木健輔, 馬ベイ, 森田健, 石谷善博
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] フォノンによるGaN励起子ダイナミクス過程への影響2017
- Author(s)
  馬ベイ, 石谷善博
- Organizer
  第9 回ナノ構造・エピタキシャル成長講演会招待講演
- Invited
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] 磁場下赤外反射分光によるInN電子有効質量の解析2017
- Author(s)
  松本大，馬ベイ，森田健，福井一俊，木村真一，飯塚拓也
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] p型GaNにおける深い準位を介した発光特性の解析2017
- Author(s)
  庄司凌，上原大侑, 馬ベイ, 森田健, 石谷善博 , 塩島謙次
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Theoretical calculation of rate coefficients, densities, and decay time of excitons and free carriers in GaN2017
- Author(s)
  Kensuke Oki, Kentaro Nomachi, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 磁場下赤外反射分光によるInN電子有効質量の解析2017
- Author(s)
  松本大，馬ベイ，森田健，福井一俊，木村真一，飯塚拓也，石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 窒化物半導体における電子‐フォノン相互作用と結晶性2017
- Author(s)
  石谷善博、馬ベイ、大木健輔、坂本裕則、森田健
- Organizer
  第78回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Phononic phenomenon in carrier dynamics and interaction with radiation in III-nitride materials2017
- Author(s)
  Yoshihiro Ishitani, Bei Ma, Kensuke Okim Hironori Sakamoto, and Ken Morita
- Organizer
  Third Intensive Discussion on Crystal Growth of Nitride Semiconductors
- Place of Presentation
  Tohoku University
- Year and Date
  2017-01-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] AlN/金属ストライプ構造における表面、界面ポラリトンモード観測2017
- Author(s)
  坂本裕則，馬ベイ, 森田健, 石谷善博
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 磁場下赤外反射分光によるInN電子有効質量の解析2017
- Author(s)
  松本大，馬ベイ，森田健，福井一俊，木村真一，飯塚拓也
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜. 横浜
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] 窒化物半導体における電子‐フォノン相互作用と結晶性2017
- Author(s)
  石谷善博，坂本裕則，馬ベイ，森田健
- Organizer
  第78回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] フォノンによるGaN励起子ダイナミクス過程への影響2017
- Author(s)
  馬ベイ, 石谷善博
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] AlN/金属ストライプ構造における表面、界面ポラリトンモード観測2017
- Author(s)
  坂本裕則，馬ベイ, 森田健, 石谷善博
- Organizer
  第9 回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Dielectric interaction of infrared light and electron-phonon coupling system in metal/semiconductor composites2017
- Author(s)
  E. Takeuchi, H. Sakamoto, B. Ma, K. Morita, and Y. Ishitani
- Organizer
  Compound Semiconductor Week
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Phononic phenomenon in carrier dynamics and interaction with radiation in III-nitride materials2017
- Author(s)
  Yoshihiro Ishitani, Bei Ma, Kensuke Okim Hironori Sakamoto, and Ken Morita
- Organizer
  3rd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-3)
- Place of Presentation
  Tohoku university, Japan
- Year and Date
  2017-01-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Photonic function based on longitudinal optical phonon modes of semiconductors: infrared absorption control of composite materials and destructive quantum interferences2017
- Author(s)
  Y. Ishitani, H. Sakamoto, B. Ma, and K. Morita
- Organizer
  EMN Optoelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Introduction of biexciton processes into exciton dynamics simulation for GaN based on the phononic-excitonic-radiative model2017
- Author(s)
  Kentaro Nomachi, Ma Bei, Ken Morita, and Yoshihiro Ishitani
- Organizer
  International Workshop on UV materials and devices
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaNにおける励起子及び自由キャリアの密度とレート係数の理論計算2017
- Author(s)
  大木健輔，野町健太郎，馬ベイ，森田健，石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Simulation of transient carrier-exciton-phonon energy transport in GaN2017
- Author(s)
  Bei Ma and Yoshihiro Ishitani
- Organizer
  ICNS 12 - 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] 金属/半導体複合構造におけるLOフォノン-プラズモン結合モード共鳴赤外光吸収とポラリトン損失2017
- Author(s)
  竹内映人、坂本裕則、馬ベイ、森田健、石谷善博
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] AlN薄膜を用いたLOフォノン共鳴電気双極子形成および表面ポラリトン伝搬2017
- Author(s)
  坂本裕則, 馬ベイ, 森田健, 石谷善博
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] AlN/金属ストライプ構造のラマン散乱スペクトルにおける A1-E1選択則の崩れに関する検討2017
- Author(s)
  坂本裕則，馬ベイ, 森田健, 石谷善博
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] 磁場下赤外反射分光によるInN電子有効質量の解析2017
- Author(s)
  松本大、馬ベイ、森田健、福井一俊、木村真一、飯塚拓也、石谷善博
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] AlN/金属ストライプ構造のラマン散乱スペクトルにおけるA1-E1選択則の崩れに関する検討2017
- Author(s)
  坂本裕則，馬ベイ，森田健，石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜. 横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Photonic function based on longitudinal optical phonon modes of semiconductors: infrared absorption control of composite materials and destructive quantum interferences2017
- Author(s)
  Y. Ishitani, H. Sakamoto, B. Ma, and K. Morita
- Organizer
  EMN Optoelectronics
- Invited
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] AlN/金属ストライプ構造のラマン散乱スペクトルにおけるA1-E1選択則の崩れに関する検討2017
- Author(s)
  坂本裕則，馬ベイ, 森田健, 石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Theoretical calculation of rate coefficients, densities, and decay time of excitons and free carriers in GaN2017
- Author(s)
  Kensuke Oki, Kentaro Nomachi, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Introduction of biexciton processes into exciton dynamics simulation for GaN based on the phononic-excitonic-radiative model2017
- Author(s)
  Kentaro Nomachi, Ma Bei, Ken Morita, and Yoshihiro Ishitani
- Organizer
  International Workshop on UV materials and devices (IWUMD) 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Dielectric interaction of infrared light and electron-phonon coupling system in metal/semiconductor composites2017
- Author(s)
  E. Takeuchi, H. Sakamoto, B. Ma, K. Morita, and Y. Ishitani
- Organizer
  Compound Semiconductor Week
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] AlN 薄膜を用いたLOフォノン共鳴電気双極子形成および表面ポラリトン伝搬2017
- Author(s)
  坂本裕則、馬ベイ、森田健、石谷善博
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Photonic function based on longitudinal optical phonon modes of semiconductors: infrared absorption control of composite materials and destructive quantum interferences2017
- Author(s)
  Y. Ishitani, H. Sakamoto, B. Ma, and K. Morita
- Organizer
  EMN Optoelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Interface phonon polariton propagation and LO phonon-resonant absorption of infrared light in AlN/metal-composites2017
- Author(s)
  H. Sakamoto Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Interface phonon polariton propagation and LO phonon-resonant absorption of infrared light in AlN/metal-composites2017
- Author(s)
  Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
- Organizer
  International conference on nitride semiconductors
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Simulation of carrier-exciton-phonon energy transportation in GaN2017
- Author(s)
  Bei Ma, Yoshihiro Ishitani
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Dielectric interaction of infrared light and electron-phonon coupling system in metal/semiconductor composites2017
- Author(s)
  E. Takeuchi, H. Sakamoto, B. Ma, K. Morita, and Y. Ishitani
- Organizer
  Compound Semiconductor Week
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] GaNにおける定常状態励起子分子準位間遷移過程理論計算2017
- Author(s)
  野町健太郎, 大木健輔, 馬ベイ, 森田健, 石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] C exciton and A exciton dynamic of m-plane GaN film2017
- Author(s)
  Bei Ma, Tsubasa Yamakawa, and Yoshihiro Ishitani
- Organizer
  The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] 金属/半導体複合構造におけるLOフォノン-プラズモン結合モード共鳴赤外光吸収とポラリトン損失2017
- Author(s)
  竹内映人，坂本裕則，馬ベイ，森田健，石谷善博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜. 横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] GaNにおける励起子及び自由キャリアの密度とレート係数の理論計算2017
- Author(s)
  大木健輔, 野町健太郎, 馬ベイ, 森田健, 石谷善博
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Phononic phenomenon in carrier dynamics and interaction with radiation in III-nitride materials2017
- Author(s)
  Yoshihiro Ishitani, Bei Ma, Kensuke Okim Hironori Sakamoto, and Ken Morita
- Organizer
  Third Intensive Discussion on Crystal Growth of Nitride Semiconductors
- Place of Presentation
  Sendai, Japan
- Year and Date
  2017-01-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] AlN/金属ストライプ構造における表面、界面ポラリトンモード観測2017
- Author(s)
  坂本裕則，馬ベイ, 森田健, 石谷善博
- Organizer
  第9 回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Interface phonon polariton propagation and LO phonon-resonant absorption of infrared lightin AlN/metal-composites2017
- Author(s)
  H. Sakamoto Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
- Organizer
  ICNS 12 - 12th International Conference on Nitride Semiconducto
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Quantum interference of three LO modes in p-type Ga0.5In0.5P: Contribution of a trigonal phonon mode2016
- Author(s)
  Hironori Sakamoto, Bei Ma, Ken Morita, Yoshihiro Ishitani
- Organizer
  ISCS2016
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Electronic transition dynamics of deep levels in a p-GaN film analysed by time resolved PL measurements using two excitation laser beams2016
- Author(s)
  Hla Myo Tun, Ryo Shouji, Bei Ma, Ken Morita, Kenji Shiojima
- Organizer
  International Conference on Science and Engineering
- Place of Presentation
  Yangon, Myanmar
- Year and Date
  2016-12-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Exciton dynamics and stability of GaN in non-thermal equilibrium state by the analysis taking into account the higher-order exciton states2016
- Author(s)
  Yoshihiro Ishitani, K. Takeuchi, T. Iwahori, K. Oki, K. Nomachi, B. Ma, K. Morita, H. Miyake, and K. Hiramatsu
- Organizer
  International Workshop on Nitride Seiconductors 2016
- Place of Presentation
  Orland, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Phonon Engineering of Semiconductors in THz frequency region2016
- Author(s)
  Yoshihiro Ishitani, Hironori Sakamoto, Eito Takeuchi, Bei Ma, and Ken Morita
- Organizer
  International Conference on Science and Engineering
- Place of Presentation
  Yangon Myanmar
- Year and Date
  2016-12-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] フォノンの吸放出による電子・励起子系エネルギーの励起過程2016
- Author(s)
  馬ベイ,三宅秀人,平松和政,石谷善博
- Organizer
  2016年第78回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] フォノンの吸放出による電子・励起子系エネルギーの励起過程2016
- Author(s)
  馬ベイ，三宅秀人，平松和政，石谷善博
- Organizer
  第７７回秋季応用物理学会学術講演会優秀論文賞受賞記念講演
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Quantum interference of three LO modes in p-type Ga0.5In0.5P: Contribution of a trigonal phonon mode2016
- Author(s)
  Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
- Organizer
  43rd International Symposium on Compound Semiconductors
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Simulation of carrier-exciton-phonon dynamics in GaN in non-equilibrium state2016
- Author(s)
  Bei Ma and Yoshihiro Ishitani
- Organizer
  International Workshop on Nitride Seiconductors 2016
- Place of Presentation
  Orlando, U.S.A.
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 高次励起準位を用いたGaNにおける励起子の励起・脱励起ダイナミクス解析2016
- Author(s)
  竹内和真、馬ベイ、森田健、石谷善博
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Phonon Engineering of Semiconductors in THz frequency region2016
- Author(s)
  Yoshihiro Ishitani, Hironori Sakamoto, Eito Takeuchi, Bei Ma, and Ken Morita
- Organizer
  International Conference on Science and Engineering
- Place of Presentation
  Yangon, Myanmar
- Year and Date
  2016-12-10
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Introducing of Biexciton Processes into Exciton Dynamics Simulation for GaN Based on Collisional Phononic and Radiative Model2016
- Author(s)
  Kentaro Nomachi, Tomohiro Iwahori, Kensuke Oki, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Organizer
  Compound Semiconductor Week
- Place of Presentation
  Toyama
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Growth of InN/GaN Dots on 4H‐SiC(0001) 4° off Vicinal Substrates by Molecular Beam Epitaxy2016
- Author(s)
  K. Matsuoka, S. Yagi, H. Yaguchi
- Organizer
  19th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Montpellier, France
- Year and Date
  2016-09-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] P型Ga0.5In0.5Pにおける複数種LO準位と電子遷移系の量子干渉効果2016
- Author(s)
  坂本裕則、馬ベイ、森田健、石谷善博
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] 赤外反射分光によるGaN薄膜の電子特性深さ分解評価手法2016
- Author(s)
  上條隆明、馬ベイ、森田健、石谷善博
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Exciton dynamics and stability of GaN in non-thermal equilibrium state by the analysis taking into account the higher-order exciton states2016
- Author(s)
  Yoshihiro Ishitani, K. Takeuchi, T. Iwahori, K. Oki, K. Nomachi, B. Ma, K. Morita, H. Miyake, and K. Hiramatsu
- Organizer
  International Workshop on Nitride Seiconductors 2016
- Place of Presentation
  Orlando, U.S.A.
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] 半導体/金属複合構造におけるLOフォノン-プラズモン結合モードでの赤外光吸収2016
- Author(s)
  竹内映人，馬ベイ, 森田健, 石谷善博
- Organizer
  2016年第78回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] 非熱平衡状態におけるGaN励起子ダイナミクスの実験解析及び数値計算2016
- Author(s)
  馬ベイ,竹内和真,三宅秀人,平松和政,石谷善博
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] p-Ga0.5In0.5Pにおける複数種LOフォノン系量子干渉効果および、フォノン系電磁誘起透明化のスペクトル計算2016
- Author(s)
  坂本裕則，馬ベイ，森田健，石谷善博
- Organizer
  第5回結晶成長未来塾
- Place of Presentation
  東京農工大学小金井キャンパス，小金井市
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Introducing of Biexciton Processes into Exciton Dynamics Simulation for GaN Based on Collisional Phononic and Radiative Model2016
- Author(s)
  Kentaro Nomachi, Tomohiro Iwahori, Kensuke Oki, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Organizer
  CSW2016
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] 非熱平衡状態におけるGaN励起子ダイナミクスの実験解析及び数値計算2016
- Author(s)
  馬ベイ，竹内和真，石谷善博，三宅秀人，平松和政
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Exciton dynamics and stability of GaN in non-thermal equilibrium state by the analysis taking into account the higher-order exciton states2016
- Author(s)
  Yoshihiro Ishitani, K. Takeuchi, T. Iwahori, K. Oki, K. Nomachi, B. Ma, K. Morita, H. Miyake, and K. Hiramatsu
- Organizer
  International Workshop on Nitride Seiconductors 2016　（IWN2016)
- Place of Presentation
  Orland, U.S.A.
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] ラマン散乱スペクトルにおけるファノ干渉を用いた窒化物半導体の正孔濃度評価モデルの検討2016
- Author(s)
  坂本裕則，馬ベイ，森田健，石谷善博
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学桂キャンパス，京都市
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] GaNにおける励起子・励起子分子準位間遷移過程の理論計算2016
- Author(s)
  野町健太郎，岩堀友洋，大木健輔，馬ベイ，森田健，石谷善博
- Organizer
  第78回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] GaNにおける励起子・励起子分子準位間遷移過程の理論計算2016
- Author(s)
  野町健太郎, 岩堀友洋, 大木健輔, 馬ベイ, 森田健, 石谷善博
- Organizer
  第78回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] GaNにおける励起子・励起子分子準位間遷移過程の理論計算2016
- Author(s)
  野町健太郎,岩堀友洋, 大木健輔, 馬ベイ, 森田健, 石谷善博
- Organizer
  2016年第78回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] ラマン散乱スペクトルにおけるファノ干渉を用いた窒化物半導体の正孔濃度評価モデルの検討2016
- Author(s)
  坂本裕則、馬ベイ, 森田健, 石谷善博
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Electronic transition dynamics of deep levels in a p-GaN film analysed by time resolved PL measurements using two excitation laser beams2016
- Author(s)
  Hla Myo Tun, Ryo Shouji, Bei Ma, Ken Morita, Kenji Shiojima
- Organizer
  International Conference on Science and Engineering
- Place of Presentation
  Yangon Myanmar
- Year and Date
  2016-12-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] p-Ga0.5In0.5Pにおける複数種LOフォノン系量子干渉効果および、フォノン系電磁誘起透明化のスペクトル計算2016
- Author(s)
  坂本裕則、馬ベイ, 森田健, 石谷善博
- Organizer
  第5回結晶成長未来塾
- Place of Presentation
  東京農工大学小金井キャンパス(東京),
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Phonon Engineering of Semiconductors in THz frequency region2016
- Author(s)
  Yoshihiro Ishitani, Hironori Sakamoto, Eito Takeuchi, Bei Ma, and Ken Morita
- Organizer
  International Conference on Science and Engineering
- Place of Presentation
  Yangon, Myanmar
- Year and Date
  2016-12-10
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] GaNにおける定常状態励起子分子準位間遷移過程理論計算2016
- Author(s)
  野町健太郎,岩堀友洋, 大木健輔, 馬ベイ, 森田健, 石谷善博
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Electronic States of III-V and II-VI Alloys Calculated by IQB theory2016
- Author(s)
  Ayaka Kishi, Masato Oda, and Yuzo Shinozuka
- Organizer
  International Symposium on Compound Semiconductors
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Electronic transition dynamics of deep levels in a p-GaN film analysed by time resolved PL measurements using two excitation laser beams2016
- Author(s)
  Hla Myo Tun, Ryo Shouji, Bei Ma, Ken Morita, Kenji Shiojima
- Organizer
  International Conference on Science and Engineering
- Place of Presentation
  Yangon, Myanmar
- Year and Date
  2016-12-10
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06425
[Presentation] Simulation of carrier-exciton-phonon dynamics in GaN in non-equilibrium state2016
- Author(s)
  Bei Ma and Yoshihiro Ishitani
- Organizer
  Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Hilton Orlando Lake Buena Vista, Orlando, Florida
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] p 型Ga0.5In0.5P における高濃度p型ドープ試料におけるフォノン系電磁誘起透明化のスペクトル計算2016
- Author(s)
  坂本裕則，馬ベイ, 森田健, 石谷善博
- Organizer
  2016年第78回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K17511
[Presentation] Simulation of carrier-exciton-phonon dynamics in GaN in non-equilibrium state2016
- Author(s)
  Bei Ma and Yoshihiro Ishitani
- Organizer
  International Workshop on Nitride Seiconductors 2016
- Place of Presentation
  Orland, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Introducing of Biexciton Processes into Exciton Dynamics Simulation for GaN Based on Collisional Phononic and Radiative Model2016
- Author(s)
  Kentaro Nomachi, Tomohiro Iwahori, Kensuke Oki, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Organizer
  International Symposium on Compound Semiconductors
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] フォノンの吸放出による電子・励起子系エネルギーの励起過程2016
- Author(s)
  馬ベイ，三宅秀人，平松和政，石谷善博
- Organizer
  第78回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] GaNにおける起子分子準位間遷移過程理論計算2016
- Author(s)
  野町健太郎，岩堀友洋，大木健輔，馬ベイ，森田健，石谷善博
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] GaNにおける非熱平衡系励起子遷移過程のフォノン・衝突・輻射モデルに基づく解析2016
- Author(s)
  岩堀友洋、馬ベイ、森田健、石谷善博
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 赤外反射分光によるGaN薄膜の電子特性深さ分解評価手法2016
- Author(s)
  上條隆明、馬ベイ、森田健、石谷善博
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] p 型Ga0.5In0.5P における高濃度ｐ型ドープ試料におけるフォノン系電磁誘起透明化のスペクトル計算2016
- Author(s)
  坂本裕則，馬ベイ，森田健，石谷善博
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ，新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] ELECTRONIC STATES OF ZINC-BLENDE NITRIDE ALLOYS CALCULATED BY IQB MODEL2015
- Author(s)
  Yuzo Shinozuka and Masato Oda
- Organizer
  11th International Symposium on Nitride Semiconductors
- Place of Presentation
  Beijin, China
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Optical and Structural Characterization of GaAs:N δ-Doped2015
- Author(s)
  S. Yagi, Y. Sato, N. Ueyama, T. Suzuki,
- Organizer
  5th International Workshop on Epitaxial Growth and Fundamental
- Place of Presentation
  (Hsinchu, Taiwan
- Year and Date
  2015-09-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] LO フォノン-価電子帯間遷移の量子干渉におけるキャリア分布の影響2015
- Author(s)
  坂本裕則、馬ベイ、森田健、石谷善博
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] GaNにおける非熱平衡系励起子遷移過程の水素プラズマモデルに基づいた計算2015
- Author(s)
  岩堀友洋,竹内和真, 馬ベイ, 森田健, 石谷善博
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 赤外反射分光によるGaNの電子密度深さ不均一性評価手法2015
- Author(s)
  上條隆明, 馬 蓓, 森田健, 石谷善博
- Organizer
  第7回窒化物半導体結晶成長講演会(プレISGN-6)
- Place of Presentation
  東北大学
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] GaNにおけるフォノン-キャリアダイナミクス解析2015
- Author(s)
  馬ベイ, 竹内和真、岩堀友洋、三宅秀人、平松和政、石谷善博
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Interference of 2LO phonon and continuum inter-valence band transition in p-GaInP film2015
- Author(s)
  H. Sakamoto,Y.Ishitani, K. Morita, B. Ma
- Organizer
  40th International Conference on Infrared and Millimeter and Terahertz Waves
- Place of Presentation
  Hong-Kong, China
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Depth profile characterization technique of electron density in GaN films by infrared reflection spectra2015
- Author(s)
  Takaaki Kamijoh, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
- Place of Presentation
  Act City Hamamatsu, Hamamatsu
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Mid-infrared absorption at the LO phonon energy of metal/GaN-composite structure2015
- Author(s)
  Y. Ishitani, K. Hatta, E. Takeuchi, B. Ma, and K. Morita
- Organizer
  11th International Symposium on Nitride Semiconductors
- Place of Presentation
  Beijin, China,
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Theoretical investigation of non-thermal equilibrium exciton dynamics based on hydrogen plasma model in GaN2015
- Author(s)
  Tomohiro Iwahori, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
- Place of Presentation
  Act City Hamamatsu, Hamamatsu
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 赤外反射分光による GaN の電子深さ特性評価手法2015
- Author(s)
  上條隆明、馬ベイ、森田健、石谷善博
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] GaNにおける定常状態励起子遷移過程の水素プラズマモデルに基づいた計算2015
- Author(s)
  岩堀友洋,竹内和真, 馬ベイ, 森田健, 石谷善博
- Organizer
  第7回窒化物半導体結晶成長講演会(プレISGN-6)
- Place of Presentation
  東北大学
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Numerical analysis of ion impurity effect on energy relaxation processes of carriers and excitons in GaN2015
- Author(s)
  B. Ma, K. Morita, and Y. Ishitani
- Organizer
  11th International Symposium on Nitride Semiconductors
- Place of Presentation
  Beijin, China
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 赤外反射分光によるGaNの電子密度深さ不均一性評価手法2015
- Author(s)
  上條隆明, 馬ベイ, 森田健, 石谷善博
- Organizer
  2015年第7回窒化物半導体結晶成長講演会(プレISGN-6)
- Place of Presentation
  東北大学
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] 赤外反射分光による GaN の電子深さ特性評価手法2015
- Author(s)
  條隆明、馬ベイ、森田健、石谷善博
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Effect of impurity on the exciton dynamics of GaN in non-thermal equilibrium state2015
- Author(s)
  Bei Ma, Kazuma Takeuchi, and Yoshihiro Ishitani
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
- Place of Presentation
  Act City Hamamatsu, Hamamatsu
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Infrared absorption at the LO phonon energy of metal/semiconductor/metal composite materials2015
- Author(s)
  Y. Ishitani, E. Takeuchi, B. Ma, and K. Morita
- Organizer
  40th International Conference on Infrared and Millimeter and Terahertz Waves
- Place of Presentation
  Hong-Kong, China
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Depth profile characterization technique of electron density in GaN films by infrared reflection spectra2015
- Author(s)
  Takaaki Kamijoh, Bei Ma, Ken Morita, and Yoshihiro Ishitani
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6),
- Place of Presentation
  Act City Hamamatsu, Hamamatsu, Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13345
[Presentation] Epitaxial relationship of GaN grown on GaAs (110) by RF-molecular beam2015
- Author(s)
  T. Ikarashi, M. Orihara, S. Yagi, S. Kuboya, R. Katayama, and
- Organizer
  11th International Conference on Nitride Semiconductors
- Place of Presentation
  Beijin, China
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] InNの非輻射再結合速度決定機構におけるキャリア・フォノン輸送特性2014
- Author(s)
  今井大地, 森田健, 塚原捷生, 馬蓓, 石谷善博, 王新強, 草部一秀, 吉川明彦
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 縮退型ポンプ-プローブ法によるInN の超高速ダイナミクス観測2014
- Author(s)
  今井大地, 森田健, 塚原捷生, 馬蓓, 石谷善博, 王新強, 草部一秀, 吉川明彦
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Anomalous excitation power dependence of the luminescence from2014
- Author(s)
  Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, H. Yaguchi
- Organizer
  The 41st International Symposium on Compound Semiconductors
- Place of Presentation
  Montpellier, France
- Year and Date
  2014-05-12
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] GaN励起子発光のフォノンレプリカに着目した励起子運動量および再結合過程の解析2014
- Author(s)
  高橋賢治，後藤圭，今井大地，森田健，馬蓓, 石谷善博，三宅秀人，平松和政
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Luminescence and Quenching Properties in GaPN Revealed by Below-Gap2014
- Author(s)
  M. Suetsugu, A. Z. M. Touhidul Islam, T. Hanaoka, T. Fukuda, N. Kamata,
- Organizer
  The 14th International Symposium on the Science and Technology of
- Place of Presentation
  Como, Italy
- Year and Date
  2014-06-23
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Effects of Carrier Transport and Local Lattice Temperature on Nonradiative Recombination processes in InN Films2013
- Author(s)
  Daichi Imai, Yoshihiro Ishitani, X inqiang Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
- Organizer
  10th International Symposium on Nitride Semiconductors
- Place of Presentation
  Washington, U.S.A
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] InNのバンド端発光効率低減過程におけるフォノン輸送特性の影響,今井大地，石谷善博, 王新強, 吉川明彦2013
- Author(s)
  今井大地、石谷善博、森田健、馬王新強、吉川明彦
- Organizer
  第74回秋季応用物理学会学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Exciton-phonon interaction of GaN in non-thermal equilibrium state
- Author(s)
  Y.Ishitani, K. Takahashi, K. Goto, B. Ma, K. Morita, H. Miyake, and K. Hiramatsu
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 励起子励起準位を用いたGaNの励起子ダイナミクスの解析
- Author(s)
  竹内和真 ,大泉尚之 ,馬ベイ ,森田健 ,石谷善博 ,三宅秀人 ,平松和政
- Organizer
  第62回　応用物理学会春季学術講演会
- Place of Presentation
  東海大学、神奈川
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] GaNにおけるキャリア・励起子エネルギー緩和過程の励起条件依存に関する数値解析
- Author(s)
  馬ベイ, 森田健, 石谷善博
- Organizer
  第62回　応用物理学会春季学術講演会
- Place of Presentation
  東海大学、神奈川
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Simulation of exciton and carrier energy excitation and relaxation dynamics in GaN
- Author(s)
  Bei Ma, Kenji Takahashi, K. Takeuchi, T. Iwahori, Ken Morita and Yoshihiro Ishitani
- Organizer
  Nanoenergy and Nanosystems 2014
- Place of Presentation
  Beijing, China
- Year and Date
  2014-12-08 – 2014-12-10
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 赤外反射分光による赤外反射分光による GaN のキャリヤ密度深さ分布解析
- Author(s)
  上條隆明 , 馬ベイ, 森田健, 石谷善博
- Organizer
  第62回　応用物理学会春季学術講演会
- Place of Presentation
  東海大学、神奈川
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] GaN におけるキャリア・励起子エネルギー緩和過程
- Author(s)
  馬　ベイ，山口裕暉，高橋賢治，後藤圭，竹内和真，岩堀友洋，森田健，石谷善博，三宅秀人，平松和政
- Organizer
  第75回　応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 赤外分光によるキャリアダイナミクスおよび結晶特異構造評価
- Author(s)
  石谷善博，森田健，馬　ベイ
- Organizer
  第75回　応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25286048

1. Ishitani Yoshihiro (60291481)

# of Collaborated Projects: 5 results

# of Collaborated Products: 176 results
2. Ken Morita (30448344)

# of Collaborated Projects: 2 results

# of Collaborated Products: 61 results
3. 篠塚雄三 (30144918)

# of Collaborated Projects: 2 results

# of Collaborated Products: 7 results
4. 三宅秀人 (70209881)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
5. 矢口裕之 (50239737)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
6. 渡邉聡 (00292772)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 秋山亨 (40362363)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 岩谷素顕 (40367735)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. Kensuke Oki

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
10. 上野耕平

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

MA BEI ＭＡ ＢＥＩ

Bei Ma 馬 ベイ

Research Projects

Research Products

Co-Researchers

多波長ラマン分光によるAlGaN系HEMTの界面に着目したフォノン解析及び制御Principal Investigator

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Integrated control of optical and acoustic phonons for an inovative design of photonic and electronic devices

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Development of three dimensional spectroscopy of crystal singularity and defects and its application based on phonon science

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Proposal of improving energy conversion efficiency of solar cell by phonon confinementPrincipal Investigator

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Study on THz light source using quantum interference in phonon system

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Advanced research on semiconductor optical device materials by controlling phonon transport under non-thermal equilibrium state

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[Journal Article] Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation2020

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[Journal Article] Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN2020

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[Journal Article] Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation2020

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[Journal Article] Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers2020

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[Journal Article] Local heat energy transport analysis in GaInN/GaN heterostructures by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams2020

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[Journal Article] Investigation of the electron-phonon interactions around Ga vacancies in GaN and their role in the first stage of defect reactions2019

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[Journal Article] Electronic structure of (ZnO)1?x (InN) x alloys calculated by interacting quasi-band theory2019

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[Journal Article] Enhanced photocurrent in InGaN/GaN MQWs solar cells by coupling plasmonic with piezo-phototronic effect2019

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[Journal Article] Electric-dipole absorption resonating with longitudinal optical phonon;-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures2017

MA BEI ＭＡＢＥＩ

Bei Ma 馬ベイ

[Journal Article] Enhanced photocurrent in InGaN/GaN MQWs solar cells by coupling　plasmonic with piezo-phototronic effect2019