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MA BEI  MA BEI

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… Alternative Names

Bei Ma  馬 ベイ

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Researcher Number 90718420
Other IDs
Affiliation (Current) 2025: 千葉大学, 大学院工学研究院, 助教
Affiliation (based on the past Project Information) *help 2024 – 2025: 千葉大学, 大学院工学研究院, 助教
2017 – 2020: 千葉大学, 大学院工学研究院, 助教
2016: 千葉大学, 大学院工学研究科, 助教
Review Section/Research Field
Principal Investigator
Basic Section 30010:Crystal engineering-related / Crystal engineering
Except Principal Investigator
Crystal engineering / Basic Section 30010:Crystal engineering-related / Science and Engineering
Keywords
Principal Investigator
ダイナミクス / キャリア / 励起子 / ラマン / LOPC / GaN / 半導体 / 窒化物 / フォノン
Except Principal Investigator
光物性 … More / 格子欠陥 / 半導体物性 / フォノンダイナミクス / ラマン分光 / 励起子 / LOフォノン / キャリアダイナミクス / 窒化物半導体 / フォノン制御 / フォノン / 縦光学フォノン制御 / 電子散乱 / 発光効率 / テラヘルツ波 / 縦光学フォノン / 電気双極子 / フォノンポラリトン / 金属半導体複合構造 / ファノ効果 / 電磁誘起透明化 / LOフォノン共鳴 / 輻射 / 中赤外 / THz / 量子干渉 / THz吸収 / 界面フォノンポラリトン / THz発光 / フォノン局在制御 / 時間分解計測 / 時間分解PL / 発光デバイス / 太陽電池 / 量子井戸 / 結晶工学 / 結晶欠陥 / フォノンエンジニアリング / 欠陥評価 / 欠陥構造 / エネルギー局在 / 複合材料 / ミスフィット転位 / 共焦点ラマン散乱 / 表面マイクロ構造 / 2波長ラマン分光 / 深い準位 / 赤外分光 / ラマン散乱 / 特異構造 / 励起子ダイナミクス / 中赤外発光 / GaN / フォノン輸送 / 縦光学モード / THz輻射 / 顕微ラマン分光 / 励起子ダイダイナミクス Less
  • Research Projects

    (6 results)
  • Research Products

    (202 results)
  • Co-Researchers

    (10 People)
  •  多波長ラマン分光によるAlGaN系HEMTの界面に着目したフォノン解析及び制御Principal Investigator

    • Principal Investigator
      MA BEI
    • Project Period (FY)
      2025 – 2027
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      Chiba University
  •  Integrated control of optical and acoustic phonons for an inovative design of photonic and electronic devices

    • Principal Investigator
      石谷 善博
    • Project Period (FY)
      2024 – 2026
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      Chiba University
  •  Development of three dimensional spectroscopy of crystal singularity and defects and its application based on phonon science

    • Principal Investigator
      Ishitani Yoshihiro
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Chiba University
  •  Proposal of improving energy conversion efficiency of solar cell by phonon confinementPrincipal Investigator

    • Principal Investigator
      MA BEI
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Crystal engineering
    • Research Institution
      Chiba University
  •  Study on THz light source using quantum interference in phonon system

    • Principal Investigator
      Yoshihiro Ishitani
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Crystal engineering
    • Research Institution
      Chiba University
  •  Advanced research on semiconductor optical device materials by controlling phonon transport under non-thermal equilibrium state

    • Principal Investigator
      Ishitani Yoshihiro
    • Project Period (FY)
      2013 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Crystal engineering
    • Research Institution
      Chiba University

All 2021 2020 2019 2018 2017 2016 2015 2014 2013 Other

All Journal Article Presentation

  • [Journal Article] Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation2020

    • Author(s)
      D. Uehara, M. Kikuchi, B. Ma, H. Miyake, Y. Ishitani
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 6 Pages: 061003-061003

    • DOI

      10.35848/1882-0786/ab8c1c

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06425
  • [Journal Article] Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN2020

    • Author(s)
      Ma Bei、Tang Mingchuan、Ueno Kohei、Kobayashi Atsushi、Morita Ken、Fujioka Hiroshi、Ishitani Yoshihiro
    • Journal Title

      Applied Physics Letters

      Volume: 117 Issue: 19 Pages: 192103-192103

    • DOI

      10.1063/5.0023112

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414, KAKENHI-PLANNED-16H06425
  • [Journal Article] Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation2020

    • Author(s)
      Uehara Daisuke, Kikuchi Moe, Ma Bei, MIYAKE Hideto, Ishitani Yoshihiro
    • Journal Title

      Applied Physics Express

      Volume: Undecided

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Journal Article] Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers2020

    • Author(s)
      Shungo Okamoto, Naomichi Saito, Kotaro Ito, Bei Ma, Ken Morita , Daisuke Iida, Kazuhiro Ohkawa, and Yoshihiro Ishitani,
    • Journal Title

      Applied Physics Letters,

      Volume: 116 Issue: 14 Pages: 142107-142107

    • DOI

      10.1063/5.0003491

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772, KAKENHI-PLANNED-16H06425
  • [Journal Article] Local heat energy transport analysis in GaInN/GaN heterostructures by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams2020

    • Author(s)
      Shungo Okamoto, Naomichi Saito, Kotaro Ito, Bei Ma, Ken Morita, Daisuke Iida, Kazuhiro Ohkawa, Yoshihiro Ishitani
    • Journal Title

      IPACK2020-2570

      Volume: V001T06A002

    • DOI

      10.1115/ipack2020-2570

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Journal Article] Investigation of the electron-phonon interactions around Ga vacancies in GaN and their role in the first stage of defect reactions2019

    • Author(s)
      Masato Oda
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 未定

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Journal Article] Electronic structure of (ZnO)1?x (InN) x alloys calculated by interacting quasi-band theory2019

    • Author(s)
      Furuki Ryota、Oda Masato、Shinozuka Yuzo
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: 2 Pages: 0210021-8

    • DOI

      10.7567/1347-4065/aaf56f

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-17K05498, KAKENHI-PLANNED-16H06425, KAKENHI-PUBLICLY-17H05339
  • [Journal Article] Enhanced photocurrent in InGaN/GaN MQWs solar cells by coupling plasmonic with piezo-phototronic effect2019

    • Author(s)
      3.Chunyan Jiang, Yan Chen, Jiangman Sun, Liang Jing, Mengmeng Liu, Ting Liu,Yan Pan, Xiong Pu, Bei Ma, Weiguo Hu, Zhong Lin Wang
    • Journal Title

      Nano Energy

      Volume: 57 Pages: 300-306

    • DOI

      10.1016/j.nanoen.2018.12.036

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Journal Article] Electric-dipole absorption resonating with longitudinal optical phonon;-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures2017

    • Author(s)
      Hironori Sakamoto, Eito Takeuchi, Kouki Yoshida, Ken Morita, Bei Ma, and Yoshihiro Ishitani
    • Journal Title

      Journal of Physics D

      Volume: 51

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Journal Article] Electric-dipole absorption resonating with longitudinal optical phonon-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structure2017

    • Author(s)
      Hironori Sakamoto, Eito Takeuchi, Kouki Yoshida, Ken Morita, Bei Ma, and Yoshihiro Ishitani
    • Journal Title

      Journal of Physics D

      Volume: 51

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Journal Article] Population decay and distribution of exciton states analyzed by rate equations based on theoretical phononic and electron-collisional rate coefficients2017

    • Author(s)
      Kensuke Oki, Bei Ma, and Yoshihiro Ishitani
    • Journal Title

      Physical Review B

      Volume: 96 Issue: 20

    • DOI

      10.1103/physrevb.96.205204

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K17511, KAKENHI-PLANNED-16H06425, KAKENHI-PROJECT-17H02772
  • [Journal Article] Electric-dipole absorption resonating with longitudinal optical phonon-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures2017

    • Author(s)
      Hironori Sakamoto, Eito Takeuchi, Kouki Yoshida, Ken Morita, Bei Ma, and Yoshihiro Ishitani
    • Journal Title

      Journal of Physics D

      Volume: 51

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Journal Article] Excitation and de-excitation dynamics of excitons in a GaN film based on the analysis of radiation from high-order states2016

    • Author(s)
      Yoshihiro Ishitani, Kazuma Takeuchi, Naoyuki Oizumi, Hironori Sakamoto, Bei Ma, and Ken Morita, Hideto Miyake, and Kazumasa Hiramatsu
    • Journal Title

      Journal of Physics D

      Volume: 49 Issue: 24 Pages: 245102-245102

    • DOI

      10.1088/0022-3727/49/24/245102

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-16K17511, KAKENHI-PLANNED-16H06415
  • [Journal Article] Raman study of the quantum interference of multiple discrete states and a continuum of states in the phonon energy region of semiconductors: examples of p-type Ga0.5In0.5P films2016

    • Author(s)
      Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
    • Journal Title

      Journal of Physics D

      Volume: 49 Issue: 37 Pages: 375107-375107

    • DOI

      10.1088/0022-3727/49/37/375107

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06425, KAKENHI-PROJECT-16K17511
  • [Journal Article] Interacting quasi-band model for electronic states in compound semiconductor alloys:Wurtzite structure2016

    • Author(s)
      Ayaja Kishi, Masato Oda, and Yuzo Shinozuka
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5 Pages: 051202-051202

    • DOI

      10.7567/jjap.55.051202

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Journal Article] Raman study of the quantum interference of multiple discrete states and a continuum of states in the phonon energy region of semiconductors: examples of p-type Ga0.5In0.5P films2016

    • Author(s)
      Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
    • Journal Title

      Journal of Physics D

      Volume: 49

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Journal Article] Depth profile characterization technique of electron density in GaN films by infrared reflection spectra2016

    • Author(s)
      Takaaki Kamijoh, Bei Ma, Ken Morita, and Yoshihiro Ishitani
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FH02-05FH02

    • DOI

      10.7567/jjap.55.05fh02

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-15K13345, KAKENHI-PROJECT-16K17511
  • [Journal Article] Theoretical investigation of non-thermal equilibrium exciton dynamics in GaN based on hydrogen plasma model2016

    • Author(s)
      Tomohiro Iwahori, Bei Ma, Ken Morita, and Yoshihiro Ishitani
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FM06-05FM06

    • DOI

      10.7567/jjap.55.05fm06

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-16K17511
  • [Journal Article] Dielectric absorption of s-polarized infrared light resonant to longitudinal optical phonon energy incident on lateral (0001)GaN/Ti stripe structures2015

    • Author(s)
      Y. Ishitani, K. Hatta, K. Morita, and B. Ma
    • Journal Title

      Journal of Physics D

      Volume: 48

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Journal Article] Interacting quasi-band model for electronic states in compound semiconductor alloys: Zincblende structure2015

    • Author(s)
      Yuzo Shinozuka and Masato Oda
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 9 Pages: 091202-091202

    • DOI

      10.7567/jjap.54.091202

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Journal Article] Nonradiative coherent carrier captures and defect reaction at deep-level defects via2014

    • Author(s)
      Masaki Wakita, Kei Suzuki, and Yuzo Shinozuka
    • Journal Title

      AIP Conference Proceedings

      Volume: 1583 Pages: 204-204

    • DOI

      10.1063/1.4865636

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Journal Article] Analysis of nouradiative carrier recombination processes in InN films by mid-infrared spectroscopy2013

    • Author(s)
      Daichi Imai, Yoshihiro Ishitani, Masayuki Fujiwra, X. Q. Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
    • Journal Title

      Journal of Electronic Materials

      Volume: 42 Issue: 5 Pages: 875-881

    • DOI

      10.1007/s11664-013-2550-y

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-13J04851, KAKENHI-PROJECT-23246056, KAKENHI-PROJECT-25286048
  • [Journal Article] RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN2013

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, H. Yaguchi, K. Onabe
    • Journal Title

      Journal of Crystal Growth

      Volume: 378 Pages: 307-309

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Analysis of LO phonon properties in III-nitrides: interaction with carriers and microscopic analysis2021

    • Author(s)
      Y. Ishitani, K. Oki, M. Chizaki, S. Okamoto, T. Nakayama, B. Lin, B. Ma, K. Morita, H. Miyake , D. Iida , and K. Ohkawa
    • Organizer
      SPIE, Photonic West
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Characterization of heavily sillion doped GaN using infrared reflectance and Raman spectroscopy2021

    • Author(s)
      Bei Ma, Mingchuan Tang, Kohei Ueno, Atsushi Kobayashi, Ken Morita, Hiroshi Fujioka, and Yoshihiro Ishitani
    • Organizer
      8th Asian Conference on Crystal Growth and Crystal Technology
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Requirement of phonon control in electronic and photonic devices and mode-separated phonon transport analysis in heterostructures using microscopic Raman scattering measurement using double lasers2021

    • Author(s)
      Y. Ishitani, S. Okamoto, M. Chizaki, K. Oki, B. Ma, B.-J. Lin, K. Morita, D. Iida, and K. Ohkawa
    • Organizer
      8th Asian Conference on Crystal Growth and Crystal Technology
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Raman scattering of Si-doped GaN film at cross-section2021

    • Author(s)
      Bei Ma, Mingchuan Tang, Kohei Ueno, Atsushi Kobayashi, Ken Morita, Hiroshi Fujioka, and Yoshihiro Ishitani
    • Organizer
      Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Longitudinal Optical Phonon Resonant THz- Mid Infrared Radiation from Surface Metal-Semiconductor Microstructures2021

    • Author(s)
      Y. Ishitani, Bei Ma, Kensuke Oki, Ken Morita
    • Organizer
      Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Structure dependence of LO phonon radiation using GaAs/metal microstructure stripe structures2020

    • Author(s)
      Hnin Lai Lai Aye, K. Hayashi, B. Ma, K. Morita, and Y. Ishitani
    • Organizer
      第68回 応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 間接遷移半導体GaP表面マイクロメサストライプ構造 における中赤外吸収・輻射スペクトル解析2020

    • Author(s)
      林鴻太朗, 関川康太, 折戸春樹, 相原望, 馬ベイ, 森田健, 石谷善博
    • Organizer
      第68回 応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Longitudinal Optical Phonon Resonant THz -Mid Infrared Radiation From Surface Metal-Semiconductor Microstructures2020

    • Author(s)
      K. Hayashi, D. Tanaka, K. Ebisawa, N. Aihara, T. Yonemoto, H. L. L. Aye, B. Lin, B. Ma, K. Morita, and Y. Ishitani
    • Organizer
      IRMMW-THz
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 輻射性励起子減衰寿命の温度依存性への非輻射再結合の影響2020

    • Author(s)
      地﨑 匡哉,大木 健輔,馬ベイ,森田 健,石谷 善博
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] GaInN薄膜における膜内フォノン輸送過程の2波長同時照射ラマン分光法による解析2020

    • Author(s)
      中山朋哉,伊藤航太郎,岡本駿吾,馬ベイ, 森田 健,飯田大輔,大川和宏,石谷善博
    • Organizer
      第68回 応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] LO phonon resonant mid-IR emission from surface-metal structures on indirect electronic transition type semiconductors2020

    • Author(s)
      K. Hayashi, N. Orito, K. Sekigawa, N. Aihara, M. Bei, K. Morita, Y. Ishitani
    • Organizer
      フォノンエンジニアリング研究会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Analysis of phonon transport at GaInN/GaN heterointerfaces by Raman spectroscopy using simultaneous irradiation of two lasers2020

    • Author(s)
      S. Okamoto, K. Ito, D. Iizasa, B. Ma, K. Morita, Y. Ishitani
    • Organizer
      フォノンエンジニアリング研究会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 高SiドープGaN薄膜の断面ラマン測定2020

    • Author(s)
      馬ベイ,湯 明川,森田 健,上野 耕平,小林 篤,藤岡 洋,石谷 善博
    • Organizer
      第68回 応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] n型間接遷移半導体GaP表面マイクロストライプ構造による中赤外輻射2020

    • Author(s)
      林鴻太朗, 田中大智, 海老澤啓介, 相原 望, 米本拓郎,Hnin Lai Lai Aye, 森田 健, 馬 ベイ, 石谷善博
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] n型間接遷移半導体GaP表面マイクロストライプ構造における中赤外吸収・輻射スペクトル解析2020

    • Author(s)
      林 鴻太朗, 相原 望, 森田 健, 馬ベイ, 石谷善博
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Local heat energy transport analysis in GaInN/GaN heterostructure by microscopic imaging exploiting simultaneous irradiation of two laser beams2020

    • Author(s)
      S. Okamoto, N. Saito, K. Ito, B. Ma, K. Morita, D. Iida, K. Ohkawa, Y. Ishitani
    • Organizer
      InterPack2020
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] unctional metal-GaN micro-stripe structures for infrared and ultraviolet regions2019

    • Author(s)
      Tsubasa Yamakawa, Bojin Lin, Kensuke Oki, Bei Ma, Ken Morita, Yusuke Hayashi, Hideto Miyake, Kazuhiro Ohkawa
    • Organizer
      International Conference on Nitride Semiconductors-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] GaNの深い準位の直接光励起による発光特性の考察2019

    • Author(s)
      菊地 萌,上原大輔,馬 ベイ, 森田 健,三宅秀人,石谷善博
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] GaN,AlN,ZnOにおける励起子の非熱平衡解析2019

    • Author(s)
      大木 健輔,野町 健太郎,西川 智秀,馬 ベイ,森田 健,石谷 善博
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 赤外及びラマン分光法による高密度SiドープGaN薄膜の評価2019

    • Author(s)
      馬ベイ, 湯明川, 上野耕平, 小林篤, 藤岡洋, 石谷善博
    • Organizer
      第11回 ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 価電子帯間遷移-2種LOフォノン系における量子干渉の理論解析2019

    • Author(s)
      相原望,田中大智,森田健,馬ベイ,石谷善博
    • Organizer
      第3回フォノンエンジニアリング研究会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Local phonon analysis in InGaN film by mapping of Raman spectroscopy2019

    • Author(s)
      Shungo Okamoto, Naomichi Saito, Bei Ma, Kensuke Oki, and Ken Morita, Kazuhiro Ohkawa, and Yoshihiro Ishitani
    • Organizer
      Compound Semiconductor Week
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Analysis of emission characteristics of deep levels in GaN by direct photo excitation2019

    • Author(s)
      Moe Kikuchi, Daisuke Uehara, Bei Ma, Ken Morita, Hideto Miyake, and Yoshihiro Ishitani
    • Organizer
      Compound Semiconductor Week
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 2LOフォノン-価電子帯間電子遷移系量子干渉の理論解析2019

    • Author(s)
      相原 望,田中大智,馬 ベイ,森田 健,石谷善博
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] GaN,AlN,ZnOにおける励起子の非熱平衡解析2019

    • Author(s)
      大木健輔,野町健太郎,西川智秀,馬ベイ,森田健,石谷善博
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Deep level luminescence of HVPE grown GaN by below-bandgap photo-excitation2019

    • Author(s)
      Daisuke Uehara, Moe Kikuchi, Bei Ma, Ken Morita, Hideto Miyake, and Yoshihiro Ishitani
    • Organizer
      International Conference on Nitride Semiconductors-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] aAs-金属ストライプ構造からのLOフォノン共鳴赤外輻射特性の構造依存性2019

    • Author(s)
      海老澤啓介,田中大智,森田健,馬ベイ,石谷善博
    • Organizer
      第3回フォノンエンジニアリング研究会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 2波長ラマン分光を用いたフォノン輸送評価における測定モード依存性2019

    • Author(s)
      岡本 駿吾,伊藤航太郎, 馬 ベイ,森田 健, 飯田 大輔,大川 和宏,石谷 善博
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Microscopic analysis of heat transport at GaInN/GaN heterointerface with misfit dislocations by two-wavelength Raman measurements2019

    • Author(s)
      Shungo Okamoto, Bei Ma, Ken Morita, Daisuke Iida, Kazuhiro Ohkawa, and Yoshihiro Ishitani
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 濃度SiドープGaNの深さ方向結晶性の赤外およびラマン分光評価2019

    • Author(s)
      湯 明川,馬 ベイ, 森田 健,上野耕平,小林 篤,藤岡洋,石谷善博
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] GaAs-金属ストライプ構造からのLOフォノン共鳴赤外輻射特性の構造依存性2019

    • Author(s)
      海老澤啓介,馬 ベイ,森田 健,大木 健輔,石谷 善博
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] GaNの深い準位の直接光励起による発光特性の考察2019

    • Author(s)
      菊地萌,上原大輔,馬ベイ, 森田健, 三宅秀人,石谷善博
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Analysis of highly Si-doped GaN using various lattice vibration modes observed by infrared and Raman spectroscopy2019

    • Author(s)
      Bei Ma, Ming Chuan Tang, Ken Morita, Yoshihiro Ishitani, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka,
    • Organizer
      International Conference on Nitride Semiconductors-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Longitudinal Optical Phonon Resonating Dipole Radiation from Metal- Semiconductor Composite Structures and Quantum Interference2019

    • Author(s)
      Yoshihiro Ishitani, Keisuke Ebisawa, Daichi Tanaka, Nozomi Aihara, Bei Ma, and Ken Morita
    • Organizer
      IRMMW-THz 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] LOフォノン-価電子帯間遷移の量子干渉による結晶評価2019

    • Author(s)
      相原望, 田中大智, 森田健, 馬ベイ, 石谷善博
    • Organizer
      第11回 ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 高濃度SiドープGaNの深さ方向結晶性の赤外およびラマン分光評価2019

    • Author(s)
      湯明川,馬ベイ, 森田 健, 上野耕平, 小林篤,藤岡洋,石谷善博
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] GaAs/Auストライプ構造を用いたLOフォノン共鳴の赤外光輻射2018

    • Author(s)
      青木伴晋,花田昂樹,坂本裕則,馬ベイ,森田健,石谷善博
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 半導体/金属ストライプ構造における電気双極子形成に伴う誘電関数変化2018

    • Author(s)
      坂本裕則,馬ベイ, 森田健, 石谷善博
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] フォノンプロセスを考慮した励起子ダイナミクス解析(PXRモデル)2018

    • Author(s)
      石谷善博,大木健輔,野町健太郎,馬ベイ,森田健
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] ワイドギャップ半導体キャリア・フォノンダイナミクス2018

    • Author(s)
      石谷善博,大木健輔,野町健太郎,馬ベイ,森田健
    • Organizer
      第13回励起ナノプロセス研究会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Statistics of excitonic energy states based on phonon-exciton-radiation model2018

    • Author(s)
      Yoshihiro Ishitani, Kensuke Oki, Tsubasa Yamakawa, Bojin Lin, Bei Ma, and Ken Morita
    • Organizer
      International Workshop on Nitride Semiconductors
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Migration Energy of a N Atom around Ga Vacancy in GaN2018

    • Author(s)
      Masato Oda
    • Organizer
      7th International Symposium on Growth of III-Nitrides
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Interactions of phonon, electron, and photon in nitride semiconductors2018

    • Author(s)
      Yoshihiro Ishitani, Kensuke Oki, Naomichi Saito, Tsubasa Yamakawa, Daisuke Uehara, Shungo Okamoto, Moe Kikuchi, Keisuke Ebisawa, Bojin Lin, Bei Ma, and Ken Morita
    • Organizer
      Intensive Discussion on Growth of Nitride Semiconductors
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Electronic Structures of a NGa-VN complex defect in GaN2018

    • Author(s)
      Masato Oda
    • Organizer
      International Workshop on Nitride Semiconductor
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] ワイドギャップ半導体における励起子-フォノン系の非熱平衡解析2018

    • Author(s)
      大木健輔, 馬ベイ, 森田 健, 石谷 善博
    • Organizer
      第2回フォノンエンジニアリング研究会
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] 半導体/金属ストライプ構造における電気双極子形成に伴う誘電関数変化2018

    • Author(s)
      坂本 裕則、馬ベイ、森田 健、石谷 善博
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] ワイドギャップ半導体キャリア・フォノンダイナミクス2018

    • Author(s)
      石谷善博,大木健輔,野町健太郎,馬ベイ,森田健
    • Organizer
      第13回励起ナノプロセス研究会
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] GaN,AlN,ZnOにおける励起子の非熱平衡解析2018

    • Author(s)
      大木健輔、野町健太郎、西川智秀、馬ベイ、森田健、石谷善博
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Phonon modes Analysis of AlN/InN Superlattice2018

    • Author(s)
      Yoshihiro Ihira and Masato Oda
    • Organizer
      International Workshop on Nitride Semiconductor
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 半導体/金属ストライプ構造における電気双極子形成に伴う誘電関数変化2018

    • Author(s)
      坂本裕則,馬ベイ,森田健, 石谷善博
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] Interactions of phonon, electron, and photon in nitride semiconductors2018

    • Author(s)
      Yoshihiro Ishitani, Kensuke Oki, Naomichi Saito, Tsubasa Yamakawa, Daisuke Uehara, Shungo Okamoto, Moe Kikuchi, Keisuke Ebisawa, Bojin Lin, Bei Ma, and Ken Morita
    • Organizer
      Intensive Discussion on Growth of Nitride Semiconductors
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 赤外分光法によるGaNの高電子密度層の空間分布評価2018

    • Author(s)
      湯明川, 馬ベイ, 森田健, 石谷善博
    • Organizer
      テラヘルツ科学の最先端V
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] GaN,AlN,ZnOにおける励起子の非熱平衡解析2018

    • Author(s)
      大木 健輔、野町 健太郎、西川 智秀、馬ベイ、森田 健、石谷 善博
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] 赤外分光法によるGaNの高電子密度層の空間分布評価2018

    • Author(s)
      湯明川, 馬ベイ, 森田健, 石谷善博
    • Organizer
      テラヘルツ科学の最先端V
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Statistics of excitonic energy states based on phonon-exciton-radiation model2018

    • Author(s)
      Yoshihiro Ishitani, Kensuke Oki, Tsubasa Yamakawa, Bojin Lin, Bei Ma, and Ken Morita
    • Organizer
      International Workshop on Nitride Semiconductors
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Electronic structure of (ZnO)1-x(InN)x alloys calculated using IQB theory2018

    • Author(s)
      Ryota Furuki, Masato Oda, and Yuzo Shinozuka
    • Organizer
      Compound Semiconductor Week 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] フォノンプロセスを考慮した励起子ダイナミクス解析(PXRモデル)2018

    • Author(s)
      石谷 善博、大木 健輔、野町 健太郎、馬 ベイ、森田 健
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] ラマン散乱マッピングによるInGaNの局所フォノン場評価2018

    • Author(s)
      齋藤直道, 瀧口佳祐, 馬ベイ, 森田健, 飯田大輔, 大川和宏, 石谷善博
    • Organizer
      第79回応用物理学会秋季学術講演会名古屋国際会議場
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] ラマン散乱マッピングによるInGaNの局所フォノン場評価2018

    • Author(s)
      齋藤 直道, 瀧口 佳祐, 馬 ベイ, 森田 健, 飯田 大輔, 大川 和宏, 石谷 善博
    • Organizer
      第79回応用物理学会秋季学術講演会名古屋国際会議場
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] GaAs/Auストライプ構造を用いたLOフォノン共鳴の赤外光輻射2018

    • Author(s)
      青木 伴晋、花田 昂樹、坂本 裕則、馬ベイ、森田 健、石谷 善博
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] ワイドギャップ半導体における 励起子-フォノン系の非熱平衡解析2018

    • Author(s)
      大木 健輔, 馬 ベイ, 森田 健, 石谷 善博
    • Organizer
      第2回フォノンエンジニアリング研究会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] GaNにおける励起子及び自由キャリアの密度とレート係数の理論計算2017

    • Author(s)
      大木 健輔, 野町健太郎, 馬ベイ, 森田健, 石谷善博
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] GaNにおける定常状態励起子分子準位間遷移過程理論計算2017

    • Author(s)
      野町健太郎,大木健輔, 馬ベイ,森田健,石谷善博
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] GaNにおける定常状態励起子分子準位間遷移過程理論計算2017

    • Author(s)
      野町健太郎, 大木健輔, 馬ベイ, 森田健, 石谷善博
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] フォノンによるGaN励起子ダイナミクス過程への影響2017

    • Author(s)
      馬ベイ, 石谷善博
    • Organizer
      第9 回ナノ構造・エピタキシャル成長講演会 招待講演
    • Invited
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] 磁場下赤外反射分光によるInN電子有効質量の解析2017

    • Author(s)
      松本大,馬ベイ, 森田健,福井一俊,木村真一,飯塚拓也
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] p型GaNにおける深い準位を介した発光特性の解析2017

    • Author(s)
      庄司凌,上原大侑, 馬ベイ, 森田健, 石谷善博 , 塩島謙次
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Theoretical calculation of rate coefficients, densities, and decay time of excitons and free carriers in GaN2017

    • Author(s)
      Kensuke Oki, Kentaro Nomachi, Bei Ma, Ken Morita, and Yoshihiro Ishitani
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 磁場下赤外反射分光によるInN電子有効質量の解析2017

    • Author(s)
      松本大,馬ベイ,森田健,福井一俊,木村真一,飯塚拓也,石谷善博
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] 窒化物半導体における電子‐フォノン相互作用と結晶性2017

    • Author(s)
      石谷 善博、馬 ベイ、大木 健輔、坂本 裕則、森田 健
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Phononic phenomenon in carrier dynamics and interaction with radiation in III-nitride materials2017

    • Author(s)
      Yoshihiro Ishitani, Bei Ma, Kensuke Okim Hironori Sakamoto, and Ken Morita
    • Organizer
      Third Intensive Discussion on Crystal Growth of Nitride Semiconductors
    • Place of Presentation
      Tohoku University
    • Year and Date
      2017-01-16
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] AlN/金属ストライプ構造における表面、界面ポラリトンモード観測2017

    • Author(s)
      坂本裕則,馬ベイ, 森田健, 石谷善博
    • Organizer
      第9回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 磁場下赤外反射分光によるInN電子有効質量の解析2017

    • Author(s)
      松本大,馬ベイ,森田健,福井一俊,木村真一,飯塚拓也
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜. 横浜
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] 窒化物半導体における電子‐フォノン相互作用と結晶性2017

    • Author(s)
      石谷善博,坂本裕則,馬ベイ,森田健
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] フォノンによるGaN励起子ダイナミクス過程への影響2017

    • Author(s)
      馬ベイ, 石谷善博
    • Organizer
      第9回ナノ構造・エピタキシャル成長講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] AlN/金属ストライプ構造における表面、界面ポラリトンモード観測2017

    • Author(s)
      坂本裕則,馬ベイ, 森田健, 石谷善博
    • Organizer
      第9 回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] Dielectric interaction of infrared light and electron-phonon coupling system in metal/semiconductor composites2017

    • Author(s)
      E. Takeuchi, H. Sakamoto, B. Ma, K. Morita, and Y. Ishitani
    • Organizer
      Compound Semiconductor Week
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] Phononic phenomenon in carrier dynamics and interaction with radiation in III-nitride materials2017

    • Author(s)
      Yoshihiro Ishitani, Bei Ma, Kensuke Okim Hironori Sakamoto, and Ken Morita
    • Organizer
      3rd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-3)
    • Place of Presentation
      Tohoku university, Japan
    • Year and Date
      2017-01-16
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Photonic function based on longitudinal optical phonon modes of semiconductors: infrared absorption control of composite materials and destructive quantum interferences2017

    • Author(s)
      Y. Ishitani, H. Sakamoto, B. Ma, and K. Morita
    • Organizer
      EMN Optoelectronics
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Introduction of biexciton processes into exciton dynamics simulation for GaN based on the phononic-excitonic-radiative model2017

    • Author(s)
      Kentaro Nomachi, Ma Bei, Ken Morita, and Yoshihiro Ishitani
    • Organizer
      International Workshop on UV materials and devices
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] GaNにおける励起子及び自由キャリアの密度とレート係数の理論計算2017

    • Author(s)
      大木 健輔,野町健太郎, 馬ベイ,森田健, 石谷善博
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Simulation of transient carrier-exciton-phonon energy transport in GaN2017

    • Author(s)
      Bei Ma and Yoshihiro Ishitani
    • Organizer
      ICNS 12 - 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] 金属/半導体複合構造におけるLOフォノン-プラズモン結合モード共鳴赤外光吸収とポラリトン損失2017

    • Author(s)
      竹内映人、坂本裕則、馬ベイ、森田健、石谷善博
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] AlN薄膜を用いたLOフォノン共鳴電気双極子形成および表面ポラリトン伝搬2017

    • Author(s)
      坂本裕則, 馬ベイ, 森田健, 石谷善博
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] AlN/金属ストライプ構造のラマン散乱スペクトルにおける A1-E1選択則の崩れに関する検討2017

    • Author(s)
      坂本裕則,馬ベイ, 森田健, 石谷善博
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] 磁場下赤外反射分光によるInN電子有効質量の解析2017

    • Author(s)
      松本大、馬ベイ、森田健、福井一俊、木村真一、飯塚拓也、石谷善博
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] AlN/金属ストライプ構造のラマン散乱スペクトルにおけるA1-E1選択則の崩れに関する検討2017

    • Author(s)
      坂本裕則,馬ベイ, 森田健,石谷善博
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜. 横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] Photonic function based on longitudinal optical phonon modes of semiconductors: infrared absorption control of composite materials and destructive quantum interferences2017

    • Author(s)
      Y. Ishitani, H. Sakamoto, B. Ma, and K. Morita
    • Organizer
      EMN Optoelectronics
    • Invited
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] AlN/金属ストライプ構造のラマン散乱スペクトルにおけるA1-E1選択則の崩れに関する検討2017

    • Author(s)
      坂本裕則,馬ベイ, 森田健, 石谷善博
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Theoretical calculation of rate coefficients, densities, and decay time of excitons and free carriers in GaN2017

    • Author(s)
      Kensuke Oki, Kentaro Nomachi, Bei Ma, Ken Morita, and Yoshihiro Ishitani
    • Organizer
      12th International Conference on Nitride Semiconductors (ICNS-12)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Introduction of biexciton processes into exciton dynamics simulation for GaN based on the phononic-excitonic-radiative model2017

    • Author(s)
      Kentaro Nomachi, Ma Bei, Ken Morita, and Yoshihiro Ishitani
    • Organizer
      International Workshop on UV materials and devices (IWUMD) 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Dielectric interaction of infrared light and electron-phonon coupling system in metal/semiconductor composites2017

    • Author(s)
      E. Takeuchi, H. Sakamoto, B. Ma, K. Morita, and Y. Ishitani
    • Organizer
      Compound Semiconductor Week
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] AlN 薄膜を用いたLOフォノン共鳴電気双極子形成および表面ポラリトン伝搬2017

    • Author(s)
      坂本 裕則、馬 ベイ、森田 健、石谷 善博
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Photonic function based on longitudinal optical phonon modes of semiconductors: infrared absorption control of composite materials and destructive quantum interferences2017

    • Author(s)
      Y. Ishitani, H. Sakamoto, B. Ma, and K. Morita
    • Organizer
      EMN Optoelectronics
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Interface phonon polariton propagation and LO phonon-resonant absorption of infrared light in AlN/metal-composites2017

    • Author(s)
      H. Sakamoto Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Interface phonon polariton propagation and LO phonon-resonant absorption of infrared light in AlN/metal-composites2017

    • Author(s)
      Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
    • Organizer
      International conference on nitride semiconductors
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] Simulation of carrier-exciton-phonon energy transportation in GaN2017

    • Author(s)
      Bei Ma, Yoshihiro Ishitani
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Dielectric interaction of infrared light and electron-phonon coupling system in metal/semiconductor composites2017

    • Author(s)
      E. Takeuchi, H. Sakamoto, B. Ma, K. Morita, and Y. Ishitani
    • Organizer
      Compound Semiconductor Week
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] GaNにおける定常状態励起子分子準位間遷移過程理論計算2017

    • Author(s)
      野町健太郎, 大木健輔, 馬ベイ, 森田健, 石谷善博
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] C exciton and A exciton dynamic of m-plane GaN film2017

    • Author(s)
      Bei Ma, Tsubasa Yamakawa, and Yoshihiro Ishitani
    • Organizer
      The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] 金属/半導体複合構造におけるLOフォノン-プラズモン結合モード共鳴赤外光吸収とポラリトン損失2017

    • Author(s)
      竹内映人,坂本裕則,馬ベイ, 森田健,石谷善博
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜. 横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] GaNにおける励起子及び自由キャリアの密度とレート係数の理論計算2017

    • Author(s)
      大木 健輔, 野町健太郎, 馬ベイ, 森田健, 石谷善博
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Phononic phenomenon in carrier dynamics and interaction with radiation in III-nitride materials2017

    • Author(s)
      Yoshihiro Ishitani, Bei Ma, Kensuke Okim Hironori Sakamoto, and Ken Morita
    • Organizer
      Third Intensive Discussion on Crystal Growth of Nitride Semiconductors
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2017-01-16
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] AlN/金属ストライプ構造における表面、界面ポラリトンモード観測2017

    • Author(s)
      坂本裕則,馬ベイ, 森田健, 石谷善博
    • Organizer
      第9 回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Interface phonon polariton propagation and LO phonon-resonant absorption of infrared lightin AlN/metal-composites2017

    • Author(s)
      H. Sakamoto Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
    • Organizer
      ICNS 12 - 12th International Conference on Nitride Semiconducto
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Quantum interference of three LO modes in p-type Ga0.5In0.5P: Contribution of a trigonal phonon mode2016

    • Author(s)
      Hironori Sakamoto, Bei Ma, Ken Morita, Yoshihiro Ishitani
    • Organizer
      ISCS2016
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2016-06-25
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Electronic transition dynamics of deep levels in a p-GaN film analysed by time resolved PL measurements using two excitation laser beams2016

    • Author(s)
      Hla Myo Tun, Ryo Shouji, Bei Ma, Ken Morita, Kenji Shiojima
    • Organizer
      International Conference on Science and Engineering
    • Place of Presentation
      Yangon, Myanmar
    • Year and Date
      2016-12-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Exciton dynamics and stability of GaN in non-thermal equilibrium state by the analysis taking into account the higher-order exciton states2016

    • Author(s)
      Yoshihiro Ishitani, K. Takeuchi, T. Iwahori, K. Oki, K. Nomachi, B. Ma, K. Morita, H. Miyake, and K. Hiramatsu
    • Organizer
      International Workshop on Nitride Seiconductors 2016
    • Place of Presentation
      Orland, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Phonon Engineering of Semiconductors in THz frequency region2016

    • Author(s)
      Yoshihiro Ishitani, Hironori Sakamoto, Eito Takeuchi, Bei Ma, and Ken Morita
    • Organizer
      International Conference on Science and Engineering
    • Place of Presentation
      Yangon Myanmar
    • Year and Date
      2016-12-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] フォノンの吸放出による電子・励起子系エネルギーの励起過程2016

    • Author(s)
      馬ベイ,三宅秀人,平松和政,石谷善博
    • Organizer
      2016年第78回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] フォノンの吸放出による電子・励起子系エネルギーの励起過程2016

    • Author(s)
      馬ベイ,三宅 秀人,平松 和政,石谷 善博
    • Organizer
      第77回秋季応用物理学会学術講演会優秀論文賞受賞記念講演
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Quantum interference of three LO modes in p-type Ga0.5In0.5P: Contribution of a trigonal phonon mode2016

    • Author(s)
      Hironori Sakamoto, Bei Ma, Ken Morita and Yoshihiro Ishitani
    • Organizer
      43rd International Symposium on Compound Semiconductors
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2016-06-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] Simulation of carrier-exciton-phonon dynamics in GaN in non-equilibrium state2016

    • Author(s)
      Bei Ma and Yoshihiro Ishitani
    • Organizer
      International Workshop on Nitride Seiconductors 2016
    • Place of Presentation
      Orlando, U.S.A.
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 高次励起準位を用いたGaNにおける励起子の励起・脱励起ダイナミクス解析2016

    • Author(s)
      竹内和真、馬ベイ、森田健、石谷善博
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Phonon Engineering of Semiconductors in THz frequency region2016

    • Author(s)
      Yoshihiro Ishitani, Hironori Sakamoto, Eito Takeuchi, Bei Ma, and Ken Morita
    • Organizer
      International Conference on Science and Engineering
    • Place of Presentation
      Yangon, Myanmar
    • Year and Date
      2016-12-10
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Introducing of Biexciton Processes into Exciton Dynamics Simulation for GaN Based on Collisional Phononic and Radiative Model2016

    • Author(s)
      Kentaro Nomachi, Tomohiro Iwahori, Kensuke Oki, Bei Ma, Ken Morita, and Yoshihiro Ishitani
    • Organizer
      Compound Semiconductor Week
    • Place of Presentation
      Toyama
    • Year and Date
      2016-06-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Growth of InN/GaN Dots on 4H‐SiC(0001) 4° off Vicinal Substrates by Molecular Beam Epitaxy2016

    • Author(s)
      K. Matsuoka, S. Yagi, H. Yaguchi
    • Organizer
      19th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Montpellier, France
    • Year and Date
      2016-09-05
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] P型Ga0.5In0.5Pにおける複数種LO準位と電子遷移系の量子干渉効果2016

    • Author(s)
      坂本裕則、馬 ベイ、森田健、石谷善博
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] 赤外反射分光によるGaN薄膜の電子特性深さ分解評価手法2016

    • Author(s)
      上條隆明、馬ベイ、森田健、石谷善博
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] Exciton dynamics and stability of GaN in non-thermal equilibrium state by the analysis taking into account the higher-order exciton states2016

    • Author(s)
      Yoshihiro Ishitani, K. Takeuchi, T. Iwahori, K. Oki, K. Nomachi, B. Ma, K. Morita, H. Miyake, and K. Hiramatsu
    • Organizer
      International Workshop on Nitride Seiconductors 2016
    • Place of Presentation
      Orlando, U.S.A.
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] 半導体/金属複合構造におけるLOフォノン-プラズモン結合モードでの赤外光吸収2016

    • Author(s)
      竹内映人,馬ベイ, 森田健, 石谷善博
    • Organizer
      2016年第78回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] 非熱平衡状態におけるGaN励起子ダイナミクスの実験解析及び数値計算2016

    • Author(s)
      馬ベイ,竹内和真,三宅秀人,平松和政,石谷善博
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] p-Ga0.5In0.5Pにおける複数種LOフォノン系量子干渉効果および、フォノン系電磁誘起透明化のスペクトル計算2016

    • Author(s)
      坂本裕則,馬ベイ,森田健,石谷善博
    • Organizer
      第5回結晶成長未来塾
    • Place of Presentation
      東京農工大学小金井キャンパス,小金井市
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] Introducing of Biexciton Processes into Exciton Dynamics Simulation for GaN Based on Collisional Phononic and Radiative Model2016

    • Author(s)
      Kentaro Nomachi, Tomohiro Iwahori, Kensuke Oki, Bei Ma, Ken Morita, and Yoshihiro Ishitani
    • Organizer
      CSW2016
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2016-06-25
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] 非熱平衡状態におけるGaN励起子ダイナミクスの実験解析及び数値計算2016

    • Author(s)
      馬 ベイ,竹内和真,石谷 善博,三宅 秀人,平松 和政
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Exciton dynamics and stability of GaN in non-thermal equilibrium state by the analysis taking into account the higher-order exciton states2016

    • Author(s)
      Yoshihiro Ishitani, K. Takeuchi, T. Iwahori, K. Oki, K. Nomachi, B. Ma, K. Morita, H. Miyake, and K. Hiramatsu
    • Organizer
      International Workshop on Nitride Seiconductors 2016 (IWN2016)
    • Place of Presentation
      Orland, U.S.A.
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] ラマン散乱スペクトルにおけるファノ干渉を用いた窒化物半導体の正孔濃度評価モデルの検討2016

    • Author(s)
      坂本裕則,馬ベイ,森田健,石谷善博
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学桂キャンパス,京都市
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] GaNにおける励起子・励起子分子準位間遷移過程の理論計算2016

    • Author(s)
      野町健太郎, 岩堀友洋,大木健輔,馬ベイ, 森田健,石谷善博
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] GaNにおける励起子・励起子分子準位間遷移過程の理論計算2016

    • Author(s)
      野町健太郎, 岩堀友洋, 大木健輔, 馬ベイ, 森田健, 石谷善博
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] GaNにおける励起子・励起子分子準位間遷移過程の理論計算2016

    • Author(s)
      野町健太郎,岩堀友洋, 大木健輔, 馬ベイ, 森田健, 石谷善博
    • Organizer
      2016年第78回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] ラマン散乱スペクトルにおけるファノ干渉を用いた窒化物半導体の正孔濃度評価モデルの検討2016

    • Author(s)
      坂本裕則、馬ベイ, 森田健, 石谷善博
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Electronic transition dynamics of deep levels in a p-GaN film analysed by time resolved PL measurements using two excitation laser beams2016

    • Author(s)
      Hla Myo Tun, Ryo Shouji, Bei Ma, Ken Morita, Kenji Shiojima
    • Organizer
      International Conference on Science and Engineering
    • Place of Presentation
      Yangon Myanmar
    • Year and Date
      2016-12-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] p-Ga0.5In0.5Pにおける複数種LOフォノン系量子干渉効果および、フォノン系電磁誘起透明化のスペクトル計算2016

    • Author(s)
      坂本裕則、馬ベイ, 森田健, 石谷善博
    • Organizer
      第5回結晶成長未来塾
    • Place of Presentation
      東京農工大学小金井キャンパス(東京),
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Phonon Engineering of Semiconductors in THz frequency region2016

    • Author(s)
      Yoshihiro Ishitani, Hironori Sakamoto, Eito Takeuchi, Bei Ma, and Ken Morita
    • Organizer
      International Conference on Science and Engineering
    • Place of Presentation
      Yangon, Myanmar
    • Year and Date
      2016-12-10
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] GaNにおける定常状態励起子分子準位間遷移過程理論計算2016

    • Author(s)
      野町健太郎,岩堀友洋, 大木健輔, 馬ベイ, 森田健, 石谷善博
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Electronic States of III-V and II-VI Alloys Calculated by IQB theory2016

    • Author(s)
      Ayaka Kishi, Masato Oda, and Yuzo Shinozuka
    • Organizer
      International Symposium on Compound Semiconductors
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2016-06-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Electronic transition dynamics of deep levels in a p-GaN film analysed by time resolved PL measurements using two excitation laser beams2016

    • Author(s)
      Hla Myo Tun, Ryo Shouji, Bei Ma, Ken Morita, Kenji Shiojima
    • Organizer
      International Conference on Science and Engineering
    • Place of Presentation
      Yangon, Myanmar
    • Year and Date
      2016-12-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06425
  • [Presentation] Simulation of carrier-exciton-phonon dynamics in GaN in non-equilibrium state2016

    • Author(s)
      Bei Ma and Yoshihiro Ishitani
    • Organizer
      Nitride Semiconductors (IWN 2016)
    • Place of Presentation
      Hilton Orlando Lake Buena Vista, Orlando, Florida
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] p 型Ga0.5In0.5P における高濃度p型ドープ試料におけるフォノン系電磁誘起透明化のスペクトル計算2016

    • Author(s)
      坂本裕則,馬ベイ, 森田健, 石谷善博
    • Organizer
      2016年第78回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-16K17511
  • [Presentation] Simulation of carrier-exciton-phonon dynamics in GaN in non-equilibrium state2016

    • Author(s)
      Bei Ma and Yoshihiro Ishitani
    • Organizer
      International Workshop on Nitride Seiconductors 2016
    • Place of Presentation
      Orland, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Introducing of Biexciton Processes into Exciton Dynamics Simulation for GaN Based on Collisional Phononic and Radiative Model2016

    • Author(s)
      Kentaro Nomachi, Tomohiro Iwahori, Kensuke Oki, Bei Ma, Ken Morita, and Yoshihiro Ishitani
    • Organizer
      International Symposium on Compound Semiconductors
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2016-06-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] フォノンの吸放出による電子・励起子系エネルギーの励起過程2016

    • Author(s)
      馬 ベイ,三宅 秀人,平松 和政,石谷 善博
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] GaNにおける起子分子準位間遷移過程理論計算2016

    • Author(s)
      野町健太郎,岩堀友洋,大木健輔,馬ベイ, 森田健,石谷善博
    • Organizer
      第8回窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] GaNにおける非熱平衡系励起子遷移過程のフォノン・衝突・輻射モデルに基づく解析2016

    • Author(s)
      岩堀友洋、馬ベイ、森田健、石谷善博
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] 赤外反射分光によるGaN薄膜の電子特性深さ分解評価手法2016

    • Author(s)
      上條隆明、馬ベイ、森田健、石谷善博
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] p 型Ga0.5In0.5P における高濃度p型ドープ試料におけるフォノン系電磁誘起透明化のスペクトル計算2016

    • Author(s)
      坂本裕則,馬ベイ,森田健,石谷善博
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ,新潟
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] ELECTRONIC STATES OF ZINC-BLENDE NITRIDE ALLOYS CALCULATED BY IQB MODEL2015

    • Author(s)
      Yuzo Shinozuka and Masato Oda
    • Organizer
      11th International Symposium on Nitride Semiconductors
    • Place of Presentation
      Beijin, China
    • Year and Date
      2015-08-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Optical and Structural Characterization of GaAs:N δ-Doped2015

    • Author(s)
      S. Yagi, Y. Sato, N. Ueyama, T. Suzuki,
    • Organizer
      5th International Workshop on Epitaxial Growth and Fundamental
    • Place of Presentation
      (Hsinchu, Taiwan
    • Year and Date
      2015-09-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] LO フォノン-価電子帯間遷移の量子干渉におけるキャリア分布の影響2015

    • Author(s)
      坂本裕則、馬 ベイ、森田健、石谷善博
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] GaNにおける非熱平衡系励起子遷移過程の水素プラズマモデルに基づいた計算2015

    • Author(s)
      岩堀 友洋,竹内 和真, 馬ベイ, 森田 健, 石谷 善博
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] 赤外反射分光によるGaNの電子密度深さ不均一性評価手法2015

    • Author(s)
      上條 隆明, 馬 蓓, 森田 健, 石谷 善博
    • Organizer
      第7回窒化物半導体結晶成長講演会(プレISGN-6)
    • Place of Presentation
      東北大学
    • Year and Date
      2015-05-07
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] GaNにおけるフォノン-キャリアダイナミクス解析2015

    • Author(s)
      馬ベイ, 竹内 和真、岩堀 友洋、三宅 秀人、平松 和政、石谷 善博
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Interference of 2LO phonon and continuum inter-valence band transition in p-GaInP film2015

    • Author(s)
      H. Sakamoto,Y.Ishitani, K. Morita, B. Ma
    • Organizer
      40th International Conference on Infrared and Millimeter and Terahertz Waves
    • Place of Presentation
      Hong-Kong, China
    • Year and Date
      2015-08-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] Depth profile characterization technique of electron density in GaN films by infrared reflection spectra2015

    • Author(s)
      Takaaki Kamijoh, Bei Ma, Ken Morita, and Yoshihiro Ishitani
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
    • Place of Presentation
      Act City Hamamatsu, Hamamatsu
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Mid-infrared absorption at the LO phonon energy of metal/GaN-composite structure2015

    • Author(s)
      Y. Ishitani, K. Hatta, E. Takeuchi, B. Ma, and K. Morita
    • Organizer
      11th International Symposium on Nitride Semiconductors
    • Place of Presentation
      Beijin, China,
    • Year and Date
      2015-08-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] Theoretical investigation of non-thermal equilibrium exciton dynamics based on hydrogen plasma model in GaN2015

    • Author(s)
      Tomohiro Iwahori, Bei Ma, Ken Morita, and Yoshihiro Ishitani
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
    • Place of Presentation
      Act City Hamamatsu, Hamamatsu
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] 赤外反射分光による GaN の電子深さ特性評価手法2015

    • Author(s)
      上條隆明、馬ベイ、森田健、石谷善博
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] GaNにおける定常状態励起子遷移過程の水素プラズマモデルに基づいた計算2015

    • Author(s)
      岩堀 友洋,竹内 和真, 馬ベイ, 森田 健, 石谷 善博
    • Organizer
      第7回窒化物半導体結晶成長講演会(プレISGN-6)
    • Place of Presentation
      東北大学
    • Year and Date
      2015-05-07
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Numerical analysis of ion impurity effect on energy relaxation processes of carriers and excitons in GaN2015

    • Author(s)
      B. Ma, K. Morita, and Y. Ishitani
    • Organizer
      11th International Symposium on Nitride Semiconductors
    • Place of Presentation
      Beijin, China
    • Year and Date
      2015-08-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] 赤外反射分光によるGaNの電子密度深さ不均一性評価手法2015

    • Author(s)
      上條 隆明, 馬 ベイ, 森田 健, 石谷 善博
    • Organizer
      2015年 第7回窒化物半導体結晶成長講演会(プレISGN-6)
    • Place of Presentation
      東北大学
    • Year and Date
      2015-05-07
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] 赤外反射分光による GaN の電子深さ特性評価手法2015

    • Author(s)
      條 隆明、馬 ベイ、森田 健、石谷 善博
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] Effect of impurity on the exciton dynamics of GaN in non-thermal equilibrium state2015

    • Author(s)
      Bei Ma, Kazuma Takeuchi, and Yoshihiro Ishitani
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
    • Place of Presentation
      Act City Hamamatsu, Hamamatsu
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Infrared absorption at the LO phonon energy of metal/semiconductor/metal composite materials2015

    • Author(s)
      Y. Ishitani, E. Takeuchi, B. Ma, and K. Morita
    • Organizer
      40th International Conference on Infrared and Millimeter and Terahertz Waves
    • Place of Presentation
      Hong-Kong, China
    • Year and Date
      2015-08-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] Depth profile characterization technique of electron density in GaN films by infrared reflection spectra2015

    • Author(s)
      Takaaki Kamijoh, Bei Ma, Ken Morita, and Yoshihiro Ishitani
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides (ISGN-6),
    • Place of Presentation
      Act City Hamamatsu, Hamamatsu, Japan
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K13345
  • [Presentation] Epitaxial relationship of GaN grown on GaAs (110) by RF-molecular beam2015

    • Author(s)
      T. Ikarashi, M. Orihara, S. Yagi, S. Kuboya, R. Katayama, and
    • Organizer
      11th International Conference on Nitride Semiconductors
    • Place of Presentation
      Beijin, China
    • Year and Date
      2015-08-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] InNの非輻射再結合速度決定機構におけるキャリア・フォノン輸送特性2014

    • Author(s)
      今井大地, 森田健, 塚原捷生, 馬 蓓, 石谷善博, 王 新強, 草部一秀, 吉川明彦
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] 縮退型ポンプ-プローブ法によるInN の超高速ダイナミクス観測2014

    • Author(s)
      今井大地, 森田健, 塚原捷生, 馬 蓓, 石谷善博, 王 新強, 草部一秀, 吉川明彦
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Anomalous excitation power dependence of the luminescence from2014

    • Author(s)
      Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, H. Yaguchi
    • Organizer
      The 41st International Symposium on Compound Semiconductors
    • Place of Presentation
      Montpellier, France
    • Year and Date
      2014-05-12
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] GaN励起子発光のフォノンレプリカに着目した励起子運動量および再結合過程の解析2014

    • Author(s)
      高橋賢治,後藤圭,今井大地,森田健,馬蓓, 石谷善博,三宅秀人,平松和政
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Luminescence and Quenching Properties in GaPN Revealed by Below-Gap2014

    • Author(s)
      M. Suetsugu, A. Z. M. Touhidul Islam, T. Hanaoka, T. Fukuda, N. Kamata,
    • Organizer
      The 14th International Symposium on the Science and Technology of
    • Place of Presentation
      Como, Italy
    • Year and Date
      2014-06-23
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Effects of Carrier Transport and Local Lattice Temperature on Nonradiative Recombination processes in InN Films2013

    • Author(s)
      Daichi Imai, Yoshihiro Ishitani, X inqiang Wang, Kazuhide Kusakabe, and Akihiko Yoshikawa
    • Organizer
      10th International Symposium on Nitride Semiconductors
    • Place of Presentation
      Washington, U.S.A
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] InNのバンド端発光効率低減過程におけるフォノン輸送特性の影響,今井大地,石谷善博, 王新強, 吉川明彦2013

    • Author(s)
      今井大地、石谷善博、森田健、馬王新強、吉川明彦
    • Organizer
      第74回秋季応用物理学会学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Exciton-phonon interaction of GaN in non-thermal equilibrium state

    • Author(s)
      Y.Ishitani, K. Takahashi, K. Goto, B. Ma, K. Morita, H. Miyake, and K. Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2014
    • Place of Presentation
      Wroclaw, Poland
    • Year and Date
      2014-08-24 – 2014-08-29
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] 励起子励起準位を用いたGaNの励起子ダイナミクスの解析

    • Author(s)
      竹内 和真 ,大泉 尚之 ,馬 ベイ ,森田 健 ,石谷 善博 ,三宅 秀人 ,平松 和政
    • Organizer
      第62回 応用物理学会春季学術講演会
    • Place of Presentation
      東海大学、神奈川
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] GaNにおけるキャリア・励起子エネルギー緩和過程の励起条件依存に関する数値解析

    • Author(s)
      馬 ベイ, 森田 健, 石谷 善博
    • Organizer
      第62回 応用物理学会春季学術講演会
    • Place of Presentation
      東海大学、神奈川
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] Simulation of exciton and carrier energy excitation and relaxation dynamics in GaN

    • Author(s)
      Bei Ma, Kenji Takahashi, K. Takeuchi, T. Iwahori, Ken Morita and Yoshihiro Ishitani
    • Organizer
      Nanoenergy and Nanosystems 2014
    • Place of Presentation
      Beijing, China
    • Year and Date
      2014-12-08 – 2014-12-10
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] 赤外反射分光による 赤外反射分光による GaN のキャリヤ密度深さ分布解析

    • Author(s)
      上條 隆明 , 馬ベイ, 森田 健, 石谷 善博
    • Organizer
      第62回 応用物理学会春季学術講演会
    • Place of Presentation
      東海大学、神奈川
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] GaN におけるキャリア・励起子エネルギー緩和過程

    • Author(s)
      馬 ベイ,山口裕暉,高橋賢治,後藤圭,竹内和真,岩堀友洋,森田健,石谷善博,三宅秀人,平松和政
    • Organizer
      第75回 応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学、札幌市
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25286048
  • [Presentation] 赤外分光によるキャリアダイナミクスおよび結晶特異構造評価

    • Author(s)
      石谷善博,森田健,馬 ベイ
    • Organizer
      第75回 応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学、札幌市
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25286048
  • 1.  Ishitani Yoshihiro (60291481)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 176 results
  • 2.  Ken Morita (30448344)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 61 results
  • 3.  篠塚 雄三 (30144918)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 7 results
  • 4.  三宅 秀人 (70209881)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 5 results
  • 5.  矢口 裕之 (50239737)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 3 results
  • 6.  渡邉 聡 (00292772)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  秋山 亨 (40362363)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  岩谷 素顕 (40367735)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  Kensuke Oki
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 7 results
  • 10.  上野 耕平
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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