UENO KOHEI 上野耕平

… Alternative Names

Ueno Kohei 上野耕平

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Researcher Number	90741223
Other IDs
Affiliation (Current)	2025: 東京大学, 生産技術研究所, 助教
Affiliation (based on the past Project Information) *help	2023 – 2024: 東京大学, 生産技術研究所, 助教 2019 – 2021: 東京大学, 生産技術研究所, 助教
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related
Keywords	Principal Investigator トランジスタ / 窒化アルミニウム / スパッタリング / パワーデバイス / 結晶成長 / ダイオード / ドーピング / 高電子移動度トランジスタ / 電子デバイス / 半導体

非平衡プラズマ結晶成長技術による超高耐圧窒化アルミニウム系半導体電子素子の創製Principal Investigator
- Principal Investigator
  
  上野耕平
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  The University of Tokyo
Development of fundamental technologies for fabrication of ultra-high voltage aluminum nitride semiconductor devicesPrincipal Investigator
- Principal Investigator
  
  Ueno Kohei
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  The University of Tokyo

All 2024 2023 2022 2021 2020 2019

All Journal Article Presentation

[Journal Article] Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications2024
- Author(s)
  Maeda Ryota、Ueno Kohei、Fujioka Hiroshi
- Journal Title
  
  Applied Physics Express
  
  Volume: 17 Issue: 1 Pages: 011006-011006
- DOI
  10.35848/1882-0786/ad16ae
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K26557
[Journal Article] Temperature‐Dependent Characteristics of AlN/Al0.5Ga0.5N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts2024
- Author(s)
  Maeda Ryota、Ueno Kohei、Kobayashi Atsushi、Fujioka Hiroshi
- Journal Title
  
  physica status solidi (a)
  
  Volume: ー Issue: 21
- DOI
  10.1002/pssa.202300848
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K26557
[Journal Article] Hole Conduction Mechanism in In-Mg-Codoped GaN Prepared via Pulsed Sputtering Deposition2024
- Author(s)
  Aiko Naito, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
- Journal Title
  
  physica status solidi (a)
  
  Volume: ー Issue: 9
- DOI
  10.1002/pssa.202300806
- Data Source
  KAKENHI-PROJECT-23K26557
[Journal Article] Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering2023
- Author(s)
  Atsushi Kobayashi, Yoshio Honda, Takuya Maeda, Tomoya Okuda, Kohei Ueno, Hiroshi Fujioka
- Journal Title
  
  Applied Physics Express
  
  Volume: 17 Issue: 1 Pages: 011002-011002
- DOI
  10.35848/1882-0786/ad120b
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23KK0094, KAKENHI-PROJECT-23K26557
[Journal Article] Preparation of degenerate n-type AlxGa1-xN (0<x<0.81) with record low resistivity by pulsed sputtering deposition2023
- Author(s)
  Nishikawa Yuto、Ueno Kohei、Kobayashi Atsushi、Fujioka Hiroshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 122 Issue: 23 Pages: 232102-232102
- DOI
  10.1063/5.0144418
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K26557
[Journal Article] Mid-infrared thermal radiation resonating with longitudinal-optical like phonon from n++-doped GaN semi-insulating GaN grating structure2023
- Author(s)
  Lin Bojin、Aye Hnin Lai Lai、Ueno Kohei、Fujioka Hiroshi、Miyake Hideto、Ishitani Yoshihiro
- Journal Title
  
  Journal of Physics D: Applied Physics
  
  Volume: 57 Issue: 3 Pages: 035102-035102
- DOI
  10.1088/1361-6463/ad015e
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K26557
[Journal Article] AlN/Al<sub>0.5</sub>Ga<sub>0.5</sub>N HEMTs with heavily Si-doped degenerate GaN contacts prepared via pulsed sputtering2022
- Author(s)
  Maeda Ryota、Ueno Kohei、Kobayashi Atsushi、Fujioka Hiroshi
- Journal Title
  
  Applied Physics Express
  
  Volume: 15 Issue: 3 Pages: 031002-031002
- DOI
  10.35848/1882-0786/ac4fcf
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K05292
[Journal Article] Reduction of Twin Boundary in NbN Films Grown on Annealed AlN2022
- Author(s)
  Kihira Shunya、Kobayashi Atsushi、Ueno Kohei、Fujioka Hiroshi
- Journal Title
  
  Crystal Growth & Design
  
  Volume: 22 Issue: 3 Pages: 1720-1723
- DOI
  10.1021/acs.cgd.1c01287
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PROJECT-19K05292, KAKENHI-PROJECT-21H01827
[Journal Article] Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes2021
- Author(s)
  Fudetani Taiga、Ueno Kohei、Kobayashi Atsushi、Fujioka Hiroshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 118 Issue: 7 Pages: 072101-072101
- DOI
  10.1063/5.0040500
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Journal Article] Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics2021
- Author(s)
  Ueno Kohei、Shibahara Keita、Kobayashi Atsushi、Fujioka Hiroshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 118 Issue: 2 Pages: 022102-022102
- DOI
  10.1063/5.0036093
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Journal Article] Ultrathin rock-salt type NbN films grown on atomically flat AlN/sapphire substrates2021
- Author(s)
  Kobayashi Atsushi、Ueno Kohei、Fujioka Hiroshi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 572 Pages: 126269-126269
- DOI
  10.1016/j.jcrysgro.2021.126269
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PROJECT-19K05292, KAKENHI-PROJECT-21H01827
[Journal Article] High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High‐Temperature Annealing2021
- Author(s)
  Sakurai Yuya、Ueno Kohei、Kobayashi Atsushi、Uesugi Kenjiro、Miyake Hideto、Fujioka Hiroshi
- Journal Title
  
  physica status solidi (a)
  
  Volume: 218 Issue: 16 Pages: 2100074-2100074
- DOI
  10.1002/pssa.202100074
- Data Source
  KAKENHI-PROJECT-19K05292
[Journal Article] Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN2020
- Author(s)
  Ma Bei、Tang Mingchuan、Ueno Kohei、Kobayashi Atsushi、Morita Ken、Fujioka Hiroshi、Ishitani Yoshihiro
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 19 Pages: 192103-192103
- DOI
  10.1063/5.0023112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414, KAKENHI-PLANNED-16H06425
[Journal Article] Coherent epitaxial growth of superconducting NbN ultrathin films on AlN by sputtering2020
- Author(s)
  Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 6 Pages: 061006-061006
- DOI
  10.35848/1882-0786/ab916e
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Journal Article] Autonomous growth of NbN nanostructures on atomically flat AlN surfaces2020
- Author(s)
  Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 23 Pages: 231601-231601
- DOI
  10.1063/5.0031604
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Journal Article] Growth of InN ultrathin films on AlN for the application to field-effect transistors2020
- Author(s)
  Jeong Dayeon, Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka
- Journal Title
  
  AIP Advances
  
  Volume: 10 Issue: 12 Pages: 125221-125221
- DOI
  10.1063/5.0035203
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Journal Article] Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition2019
- Author(s)
  Kohei Ueno、Taiga Fudetani、Atsushi Kobayashi、Hiroshi Fujioka
- Journal Title
  
  Scientific Reports
  
  Volume: 9 Issue: 1 Pages: 20242-20242
- DOI
  10.1038/s41598-019-56306-0
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Journal Article] Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering2019
- Author(s)
  Kohei Ueno、Atsushi Kobayashi、Hiroshi Fujioka
- Journal Title
  
  AIP Advances
  
  Volume: 9 Issue: 7 Pages: 075123-075123
- DOI
  10.1063/1.5103185
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Journal Article] AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature2019
- Author(s)
  Kyohei Nakamura、Atsushi Kobayashi、Kohei Ueno、Jitsuo Ohta、Hiroshi Fujioka
- Journal Title
  
  Scientific Reports
  
  Volume: 9 Issue: 1 Pages: 6254-6254
- DOI
  10.1038/s41598-019-42822-6
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Presentation] スパッタ法によるAl-rich AlGaNマルチチャネルダイオードの作製2024
- Author(s)
  小坂鷹生, 前田亮太, 上野耕平, 藤岡洋
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] パルススパッタ堆積法によるグラフェン/4H-SiC基板上の窒化物薄膜成長2024
- Author(s)
  全民宰, 上野耕平, 潘テン, 竹本圭佑, 江森健太, 藤岡洋
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] Characteristics of group III-nitride films prepared by pulsed sputtering2024
- Author(s)
  Hiroshi Fujioka, Kohei Ueno
- Organizer
  SPIE OPTO
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] [第45回論文奨励賞受賞記念講演] スパッタ法により作製した縮退GaN再成長コンタクトを有するAlN/AlGaN HEMT2024
- Author(s)
  前田亮太, 上野耕平, 小林篤, 藤岡洋
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] スパッタ法によるAl共添加高濃度n型GaN薄膜の作製と評価2024
- Author(s)
  千葉優太, 内藤愛子, 上野耕平, 藤岡洋
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] Longitudinal optical (LO) and LO-like phonon resonant mid-infrared radiation emission and absorption by surface micro-structures on III-nitrides2024
- Author(s)
  Yoshihiro Ishitani, Bojin Lin, Hnin Lai Lai Aye, Daiki Yoshikawa, Hideto Miyake, Kohei Ueno, Hiroshi Fujioka
- Organizer
  SPIE OPTO
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] スパッタ法による高Al組成AlGaNへの高濃度Geドーピング2024
- Author(s)
  内藤愛子, 上野耕平, 藤岡洋
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] Fabrication of AlN/AlGaN/AlN multi-channel structures with sputtering-regrown highly degenerate n+-GaN ohmic contacts2023
- Author(s)
  Takao Kozaka, Ryota Maeda, Kohei Ueno, Hiroshi Fujioka
- Organizer
  14th International Conference on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] Selectively regrown heavily Si-doped degenerate GaN contact to AlN/AlGaN HEMTs prepared via pulsed sputtering2023
- Author(s)
  Ryota Maeda, Takao Kozaka, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] スパッタ法を用いて作製した高濃度Ge添加n型GaN薄膜の光学特性評価2023
- Author(s)
  内藤愛子, 上野耕平, 藤岡洋
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] スパッタ法によるGe添加AlGaN薄膜の成長と評価2023
- Author(s)
  内藤愛子, 上野耕平, 藤岡洋
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] スパッタ法により作製したAlN/Al0.6Ga0.4N/AlN HEMTの耐圧特性評価2023
- Author(s)
  前田亮太, 小坂鷹生, 上野耕平, 藤岡洋
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] スパッタ法により形成したn型縮退GaNトンネル接合コンタクトLEDの低電圧動作2023
- Author(s)
  Hwang Jeongeui, 上野耕平, 藤岡洋
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] Preparation of heavily Ge-doped GaN and AlGaN by pulsed sputtering2023
- Author(s)
  Aiko Naito, Kohei Ueno, Hiroshi Fujioka
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] AlN/AlGaNマルチチャネル構造ショットキーバリアダイオード2023
- Author(s)
  小坂鷹生, 前田亮太, 上野耕平, 藤岡洋
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] Structural Properties of Epitaxial ScAlN Films Grown by Sputtering: Experimental and Machine Learning Approaches2023
- Author(s)
  Atsushi Kobayashi, Yoshio Honda, Takuya Maeda, Kohei Ueno, Hiroshi Fujioka
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] Growth and characterization of highly Si-doped AlxGa1-xN (0 < x ≦ 0.81) films prepared via pulsed sputtering deposition2023
- Author(s)
  Kohei Ueno, Yuto Nishikawa, Atsushi Kobayashi, Hiroshi Fujioka
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26557
[Presentation] スパッタ法によるN極性GaN薄膜のn型伝導性制御と素子応用2022
- Author(s)
  増田裕介, 上野耕平, 小林篤, 藤岡洋
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] スパッタ再成長高濃度縮退n+-GaNオーミックコンタクトAlN/AlxGa1-xN HEMTの特性評価2022
- Author(s)
  前田亮太, 西川祐人, 上野耕平, 小林篤, 藤岡洋
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] スパッタ法による高濃度縮退 n 型 AlGaN 薄膜の成長と評価2022
- Author(s)
  西川祐人, 前田亮太, 上野耕平, 小林篤, 藤岡洋
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] NbNを利用したAl極性AlN上へのN極性AlNエピタキシャル成長2022
- Author(s)
  紀平俊矢, 小林篤, 上野耕平, 藤岡洋
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] AlN/Al0.5Ga0.5N ヘテロ界面へのスパッタ再成長高濃度縮退n+-GaNオーミックコンタクトの形成2022
- Author(s)
  前田亮太, 西川祐人, 上野耕平, 小林篤, 藤岡洋
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] 表面処理を施したAlN上に成長させたNbNの結晶方位解析2021
- Author(s)
  紀平俊矢、小林篤、上野耕平、藤岡洋
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] 高SiドープGaN薄膜の断面ラマン分光測定2021
- Author(s)
  馬ベイ, 湯明川, 森田健, 上野耕平, 小林篤, 藤岡洋, 石谷善博
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] 表面平坦化処理を施したAlN上へのNbNエピタキシャル成長2021
- Author(s)
  紀平俊矢, 前田亮太, 小林篤, 上野耕平, 藤岡洋
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] AlN原子ステップを利用したNbNナノ構造の自己組織化2021
- Author(s)
  小林篤, 上野耕平, 藤岡洋
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] トンネル接合を用いたモノリシック多色 LED の作製と評価2021
- Author(s)
  森川創一朗、上野耕平、小林篤、藤岡洋
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] スパッタ法による窒化物半導体への不純物ドーピングとデバイス応用2021
- Author(s)
  上野耕平, 小林篤, 藤岡洋
- Organizer
  第13回ナノ構造エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] スパッタ法によるn+-GaN再成長コンタクトAlN/AlGaN HEMTの作製2021
- Author(s)
  前田亮太, 上野耕平, 小林篤, 藤岡洋
- Organizer
  第82回応用物理学会秋季学術講演会 2021年9月10日
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] GaN(0001)上金属窒化物エピタキシャルショットキー接合の形成2021
- Author(s)
  安東依里奈, 上野耕平, 小林篤, 藤岡洋
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] コヒーレントAlN/AlGaNヘテロ構造の作製とトランジスタ応用2021
- Author(s)
  前田亮太、上野耕平、小林篤、藤岡洋
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] パルススパッタ堆積法によるSn添加GaN薄膜成長2021
- Author(s)
  西川祐人, 上野耕平, 小林篤, 藤岡洋
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] 非平衡状態を利用した窒化物結晶の合成と応用2021
- Author(s)
  藤岡洋、上野耕平、小林篤
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] 縦型p型GaN SBD構造を用いたショットキー障壁高さの評価2021
- Author(s)
  青山航平、上野耕平、小林篤、藤岡洋
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] AlN 上にコヒーレント成長したNbN 極薄膜の超伝導特性2020
- Author(s)
  小林篤、上野耕平、藤岡洋
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] トンネル接合を用いた低濃度p型GaN縦型SBD構造の作製2020
- Author(s)
  柴原啓太、上野耕平、小林篤、藤岡洋
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] スパッタ法によるAlN上NbN極薄膜のエピタキシャル成長2020
- Author(s)
  小林篤、上野耕平、藤岡洋
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] スパッタ法による窒化物半導体への不純物添加制御とデバイス2020
- Author(s)
  上野耕平、小林篤、藤岡洋
- Organizer
  第49回結晶成長学会国内会議
- Invited
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] 縦型p型GaN SBDを用いたショットキー障壁高さの評価2020
- Author(s)
  柴原啓太、上野耕平、小林篤、藤岡洋
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] 低濃度p型GaN縦型ショットキーバリアダイオード構造の作製と評価2020
- Author(s)
  上野耕平,柴原啓太,小林篤,藤岡洋
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] AlGaN系透明結晶の欠陥と電気特性の制御2020
- Author(s)
  藤岡洋、上野耕平、小林篤
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] Growth of ultrathin InN films on Al-polar AlN and its application to field-effect transistors2020
- Author(s)
  ジョンダヨン、小林篤、上野耕平、藤岡洋
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] スパッタ法によるGaNへの不純物添加と素子応用2020
- Author(s)
  上野耕平、森川創一朗、柴原啓太、小林篤、藤岡洋
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] Structural and Electrical Properties of AlN Films Prepared on Sapphire Substrates with Sputtering Technique2019
- Author(s)
  Sakurai Yuya, Ueno Kohei, Uesugi Kenjiro, Miyake Hideto, Fujioka Hiroshi
- Organizer
  7th Conference on Light-Emitting Devices and Their Industrial Application (LEDIA’19)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] 高濃度Si添加半極性面GaN(20-21)薄膜の作製と評価2019
- Author(s)
  森川創一朗、上野耕平、小林篤、藤岡洋
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] Ⅳ族結晶配向層を用いたガラス基板上への窒化物半導体成長2019
- Author(s)
  小林篤、中野はるか、上野耕平、藤岡洋
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] Characteristics of GaN Tunnel Junction Contacts for LEDs Prepared by Pulsed Sputtering2019
- Author(s)
  Fudetani Taiga, Ueno Kohei, Kobayashi Atsushi, Fujioka Hiroshi
- Organizer
  7th Conference on Light-Emitting Devices and Their Industrial Application (LEDIA’19)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05292
[Presentation] スパッタ・エピによる半極性面緑色InGaN LED上へのトンネル接合コンタクトの形成2019
- Author(s)
  上野耕平、森川創一朗、小林篤、藤岡洋
- Organizer
  第48回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-19K05292

1. HONDA Yoshio

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
2. 小林篤

# of Collaborated Projects: 0 results

# of Collaborated Products: 9 results
3. 前田拓也

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

UENO KOHEI 上野 耕平

Ueno Kohei 上野 耕平

Research Projects

Research Products

Co-Researchers

非平衡プラズマ結晶成長技術による超高耐圧窒化アルミニウム系半導体電子素子の創製Principal Investigator

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Development of fundamental technologies for fabrication of ultra-high voltage aluminum nitride semiconductor devicesPrincipal Investigator

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[Journal Article] Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications2024

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[Journal Article] Temperature‐Dependent Characteristics of AlN/Al0.5Ga0.5N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts2024

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[Journal Article] Hole Conduction Mechanism in In-Mg-Codoped GaN Prepared via Pulsed Sputtering Deposition2024

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[Journal Article] Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering2023

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[Journal Article] Preparation of degenerate n-type AlxGa1-xN (0<x<0.81) with record low resistivity by pulsed sputtering deposition2023

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[Journal Article] Mid-infrared thermal radiation resonating with longitudinal-optical like phonon from n++-doped GaN semi-insulating GaN grating structure2023

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[Journal Article] AlN/Al<sub>0.5</sub>Ga<sub>0.5</sub>N HEMTs with heavily Si-doped degenerate GaN contacts prepared via pulsed sputtering2022

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[Journal Article] Reduction of Twin Boundary in NbN Films Grown on Annealed AlN2022

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[Journal Article] Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes2021

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[Journal Article] Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics2021

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[Journal Article] Ultrathin rock-salt type NbN films grown on atomically flat AlN/sapphire substrates2021

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[Journal Article] High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High‐Temperature Annealing2021

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[Journal Article] Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN2020

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UENO KOHEI 上野耕平

Ueno Kohei 上野耕平