Muneta Iriya 宗田伊理也

Researcher Number	90750018
Other IDs	https://orcid.org/0000-0001-7620-4948
Affiliation (Current)	2024: 東京科学大学, 工学院, 助教
Affiliation (based on the past Project Information) *help	2024: 東京工業大学, 工学院, 助教 2018 – 2022: 東京工業大学, 工学院, 助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Basic Section 21060:Electron device and electronic equipment-related
Keywords	Principal Investigator スピントロ二クス / 2次元層状物質 / 半導体 / 遷移金属カルコゲナイド / スピントロニクス / バレートロニクス / 強磁性半導体 Except Principal Investigator ナノワイヤ / MISFET / 半導体 … More / P/n vertical integration / Multi-input NOR / Self-heating effect / p/n vertical integration / Nanowire / 自己発熱効果 / FinFET / Nano-wire Less

Electrical control of 4d-orbital edge ferromagnetism in two-dimensional layered semiconductor MoS2Principal Investigator
- Principal Investigator
  
  宗田伊理也
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tokyo Institute of Technology
Ferromagnetism in polycrystalline two-dimensional transition-metal chalcogenides and applicationsPrincipal Investigator
- Principal Investigator
  
  宗田伊理也
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tokyo Institute of Technology
Self-Heating-Effect-Free p/n-Stacked-NW/Bulk-FinFETs and 6T-SRAM
- Principal Investigator
  
  Hitoshi Wakabayashi
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo Institute of Technology
Doping-free ferromagnetic semiconductor based on 2D layered materialsPrincipal Investigator
- Principal Investigator
  
  Muneta Iriya
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tokyo Institute of Technology

All 2022 2020 2019 2018

All Journal Article Presentation

[Journal Article] Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure2022
- Author(s)
  Iriya Muneta; Takanori Shirokura; Pham Nam Hai; Kuniyuki Kakushima; Kazuo Tsutsui; Hitoshi Wakabayashi
- Journal Title
  
  Scientific Reports
  
  Volume: 12 Issue: 1 Pages: 17199-17199
- DOI
  10.1038/s41598-022-22113-3
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K14193
[Journal Article] Self-heating-aware cell design for p/n-vertically-integrated nanowire on FinFET beyond 3 nm technology node2020
- Author(s)
  Tomohiko Yamagishi, Atsushi Hori, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui and Hitoshi Wakabayashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SG Pages: SGGA09-SGGA09
- DOI
  10.35848/1347-4065/ab6d83
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04258
[Journal Article] Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout2019
- Author(s)
  Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui and Hitoshi Wakabayashi
- Journal Title
  
  IEEE, Journal of Electron Device Society
  
  Volume: 6 Pages: 1239-1245
- DOI
  10.1109/jeds.2018.2882406
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04258
[Journal Article] Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing2019
- Author(s)
  Shirokura Takanori、Muneta Iriya、Kakushima Kuniyuki、Tsutsui Kazuo、Wakabayashi Hitoshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 115 Issue: 19 Pages: 192404-192404
- DOI
  10.1063/1.5118913
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K13785
[Presentation] Ferromagnetism and current control of magnetoresistance in two-dimensional polycrystalline MoS22022
- Author(s)
  宗田伊理也, 白倉孝典, PHAM NAM HAI, 角嶋邦之, 筒井一生, 若林整
- Organizer
  第63回フラーレン・ナノチューブ・グラフェン総合シンポジウム
- Data Source
  KAKENHI-PROJECT-21K14193
[Presentation] 強磁性を示す二次元多結晶層状物質MoS2における非対称線形磁気抵抗2022
- Author(s)
  宗田伊理也, 白倉孝典, ファムナムハイ, 角嶋邦之, 筒井一生, 若林整
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K14193
[Presentation] 二次元多結晶二硫化モリブデン原子層状膜における超低電流強磁性変調2022
- Author(s)
  宗田伊理也
- Organizer
  応用物理学会
- Data Source
  KAKENHI-PROJECT-21K14193
[Presentation] Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET2019
- Author(s)
  T. Yamagishi, A. Hori, I. Muneta, K. Kakushima, K. Tsutsui, and H. Wakabayashi
- Organizer
  N-1-02, pp. 557-558, Solid State Devices and Materials, Japan Society of Applied Physics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04258
[Presentation] 横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計2019
- Author(s)
  山岸朋彦、堀敦、宗田伊理也、角嶋邦之、筒井一生、若林整
- Organizer
  2019年第80回応用物理学会秋季学術講演会、18a-B11-4
- Data Source
  KAKENHI-PROJECT-18K04258
[Presentation] Edge induced ferromagnetism in sputtered MoS2 film controlled by annealing2019
- Author(s)
  Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
- Organizer
  The 80th JSAP Autumn meeting
- Data Source
  KAKENHI-PROJECT-18K13785
[Presentation] Ferromagnetic tunnel devices with two-dimensional layered material MoS22019
- Author(s)
  Iriya Muneta, Naoki Hayakawa, Takanori Shirokura, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
- Organizer
  Collaborative Conference on Materials Research (CCMR) 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13785
[Presentation] Magnetic Force Microscopy Image Measured on MoS2 Thin Film Sputtered on CaF2 (111) Substrate2018
- Author(s)
  I. Muneta, Danial B. Z., N. Hayakawa, K. Kakushima, K. Tsutsui and H. Wakabayashi
- Organizer
  10th International School and Conference on Physics and Applications of Spin Phenomena in Solids
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13785
[Presentation] スパッタMoS2薄膜における磁気特性の成膜温度依存性2018
- Author(s)
  白倉孝典，宗田伊理也，角嶋邦之，筒井一生，若林整
- Organizer
  応用物理学会
- Data Source
  KAKENHI-PROJECT-18K13785

1. Hitoshi Wakabayashi (80700153)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results

Muneta Iriya 宗田 伊理也

Research Projects

Research Products

Co-Researchers

Electrical control of 4d-orbital edge ferromagnetism in two-dimensional layered semiconductor MoS2Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Ferromagnetism in polycrystalline two-dimensional transition-metal chalcogenides and applicationsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Self-Heating-Effect-Free p/n-Stacked-NW/Bulk-FinFETs and 6T-SRAM

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Doping-free ferromagnetic semiconductor based on 2D layered materialsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Self-heating-aware cell design for p/n-vertically-integrated nanowire on FinFET beyond 3 nm technology node2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout2019

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing2019

Author(s)

Journal Title

DOI

Data Source

[Presentation] Ferromagnetism and current control of magnetoresistance in two-dimensional polycrystalline MoS22022

Author(s)

Organizer

Data Source

[Presentation] 強磁性を示す二次元多結晶層状物質MoS2における非対称線形磁気抵抗2022

Author(s)

Organizer

Data Source

[Presentation] 二次元多結晶二硫化モリブデン原子層状膜における超低電流強磁性変調2022

Author(s)

Organizer

Data Source

[Presentation] Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET2019

Author(s)

Organizer

Data Source

[Presentation] 横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計2019

Author(s)

Organizer

Data Source

[Presentation] Edge induced ferromagnetism in sputtered MoS2 film controlled by annealing2019

Author(s)

Organizer

Data Source

[Presentation] Ferromagnetic tunnel devices with two-dimensional layered material MoS22019

Author(s)

Organizer

Data Source

[Presentation] Magnetic Force Microscopy Image Measured on MoS2 Thin Film Sputtered on CaF2 (111) Substrate2018

Author(s)

Organizer

Data Source

Muneta Iriya 宗田伊理也