Matsushita Yu-ichiro 松下雄一郎

Researcher Number	90762336
Affiliation (Current)	2022: 東京工業大学, 科学技術創成研究院, 特任准教授
Affiliation (based on the past Project Information) *help	2022: 東京工業大学, 科学技術創成研究院, 特任准教授 2019 – 2021: 東京工業大学, 物質・情報卓越教育院, 特任准教授 2019: 東京工業大学, 科学技術創成研究院, 特任准教授 2018: 東京工業大学, 科学技術創成研究院, 特任講師 2016 – 2017: 東京大学, 大学院工学系研究科(工学部), 助教
Review Section/Research Field	Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Electronic materials/Electric materials Except Principal Investigator Medium-sized Section 29:Applied condensed matter physics and related fields / Basic Section 30010:Crystal engineering-related / Basic Section 21050:Electric and electronic materials-related / Medium-sized Section 21:Electrical and electronic engineering and related fields
Keywords	Principal Investigator DFT / SiC / 第一原理計算 / 界面欠陥 / 単一光子光源 / 界面 / 酸化 / 炭化ケイ素 / 炭素欠陥 / 界面準位 … More / MOSデバイス / POCl3 / 基礎物理学 / 界面物性 / 欠陥 / SiC/SiO2 / 移動度 / α-Ga2O3 / 点欠陥 / Pbcセンタ / ダングリングボンド / 密度汎関数理論 / 電子状態計算 / SiC-MOS / 移動度キラー … More Except Principal Investigator スピン欠陥 / MOS界面 / 炭化ケイ素 / 単一光子源 / コンピューティクス / 密度汎関数理論 / 機械学習 / デバイス界面 / エピタキシャル成長 / 原子反応 / hBN / 窒化ホウ素 / イオン照射 / 二次元物質 / 複合欠陥 / ベリリウム / リチウム / 欠陥 / スピン操作 / 室温 / MOS界面欠陥 / 電子スピン共鳴分光 / 電流検出 / ワイドギャップ半導体 / 電流検出型電子スピン共鳴 / 4H-SiC / MOSFET / ダイヤモンド / BVセンター / 窒化ガリウム / 第一原理計算 / PbCセンター / 炭素ダングリングボンド / 電子スピン共鳴 / IV族系半導体 / GaN / スピン電流 / 偏光 / もつれ光子対 / 炭化ケイ素(SiC)半導体 / 量子暗号通信 Less

Generation of arbitrary polarized single-photons by injection of spin electric current to a silicon carbide MOS device
- Principal Investigator
  
  土方泰斗
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Saitama University
Realization of an entangled photon-pair emitting device using silicon carbide semiconductor
- Principal Investigator
  
  土方泰斗
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Challenging Research (Pioneering)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Saitama University
Elucidation of SiC-MOS interfaces by developing electronic structure calculation methodsPrincipal Investigator
- Principal Investigator
  
  松下雄一郎
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Tokyo Institute of Technology
2次元材料窒化ホウ素への室温でスピン操作・読み出し可能な新規スピン欠陥の創製
- Principal Investigator
  
  山崎雄一
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  National Institutes for Quantum Science and Technology
ワイドギャップ半導体MOS界面欠陥の正体の横断的解明
- Principal Investigator
  
  藤ノ木享英 (梅田享英)
- Project Period (FY)
  2020 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 29:Applied condensed matter physics and related fields
- Research Institution
  University of Tsukuba
Multi-scale calculations for complex correlation appearing in SiC oxidation and its impact on electronic propertiesPrincipal Investigator
- Principal Investigator
  
  Matsushita Yu-ichiro
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Tokyo Institute of Technology
Clarification of interface formation and electronic properties of power semiconductors through quantum theoretical computics
- Principal Investigator
  
  押山淳
- Project Period (FY)
  2018 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 29:Applied condensed matter physics and related fields
- Research Institution
  Nagoya University
Ab-initio study on correlation between SiC/SiO2 interface structures and electronic propertiesPrincipal Investigator
- Principal Investigator
  
  Matsushita Yu-ichiro
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
  The University of Tokyo

All 2022 2021 2020 2019 2018 2017

All Journal Article Presentation Patent

[Journal Article] Effect of magnetocrystalline anisotropy on magnetocaloric properties of an AlFe2B2 compound2022
- Author(s)
  Tran Hung Ba、Momida Hiroyoshi、Matsushita Yu-ichiro、Sato Kazunori、Makino Yukihiro、Shirai Koun、Oguchi Tamio
- Journal Title
  
  Physical Review B
  
  Volume: 105 Pages: 134402-134409
- DOI
  10.1103/physrevb.105.134402
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03770
[Journal Article] Insight into anisotropic magnetocaloric effect of CrI32022
- Author(s)
  Tran Hung Ba、Momida Hiroyoshi、Matsushita Yu-ichiro、Shirai Koun、Oguchi Tamio
- Journal Title
  
  Acta Materialia
  
  Volume: 231 Pages: 117851-117851
- DOI
  10.1016/j.actamat.2022.117851
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03770
[Journal Article] Implementation of quantum imaginary-time evolution method on NISQ devices by introducing nonlocal approximation2021
- Author(s)
  Nishi Hirofumi、Kosugi Taichi、Matsushita Yu-ichiro
- Journal Title
  
  npj Quantum Information
  
  Volume: 7
- DOI
  10.1038/s41534-021-00409-y
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18H03770
[Journal Article] Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces2021
- Author(s)
  Hijikata Yasuto、Komori Shota、Otojima Shunsuke、Matsushita Yu-Ichiro、Ohshima Takeshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 118 Pages: 204005-204005
- DOI
  10.1063/5.0048772
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-20H00355
[Journal Article] Construction of Green's functions on a quantum computer: Quasiparticle spectra of molecules2020
- Author(s)
  Kosugi Taichi、Matsushita Yu-ichiro
- Journal Title
  
  Physical Review A
  
  Volume: 101 Pages: 1-12
- DOI
  10.1103/physreva.101.012330
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03770
[Journal Article] Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface2020
- Author(s)
  Umeda T.、Kobayashi T.、Sometani M.、Yano H.、Matsushita Y.、Harada S.
- Journal Title
  
  Applied Physics Letters
  
  Volume: 116 Pages: 071604-071604
- DOI
  10.1063/1.5143555
- NAID
  120007003559
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-17H02781
[Journal Article] Theoretical prediction of strain-induced carrier effective mass modulation in 4H-SiC and GaN2019
- Author(s)
  Kuroiwa Yuichiro、Matsushita Yu-ichiro、Harada Kou、Oba Fumiyasu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 115 Pages: 112102-112102
- DOI
  10.1063/1.5122215
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01318, KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-18J22930
[Journal Article] Energetics and electronic structure of native point defects in α-Ga2O32019
- Author(s)
 Kobayashi Takuma、Gake Tomoya、Kumagai Yu、Oba Fumiyasu、Matsushita Yu-ichiro
- Journal Title
 
 Applied Physics Express
 
 Volume: 12 Issue: 9 Pages: 091001-091001
- DOI
 10.7567/1882-0786/ab3763
- NAID
 210000156850
- ISSN
 1882-0778, 1882-0786
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-18H03770
[Journal Article] Structure and energetics of carbon defects in SiC (0001)/SiO2 systems at realistic temperatures: Defects in SiC, SiO2, and at their interface2019
- Author(s)
  Kobayashi Takuma、Matsushita Yu-ichiro
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 126 Pages: 145302-145302
- DOI
  10.1063/1.5100754
- NAID
  120007016409
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03770
[Journal Article] First-principles study of oxygen-related defects on 4H-SiC surface: The effects of surface amorphous structure2019
- Author(s)
  Y. Matsushita, Y. Furukawa, Y. Hijikata, T. Ohshima
- Journal Title
  
  Applied Surface Science
  
  Volume: 464 Pages: 451-454
- DOI
  10.1016/j.apsusc.2018.09.072
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-18H03873, KAKENHI-PROJECT-15H03967
[Journal Article] Native point defects and carbon clusters in 4H-SiC: A hybrid functional study2019
- Author(s)
  Kobayashi Takuma、Harada Kou、Kumagai Yu、Oba Fumiyasu、Matsushita Yu-ichiro
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 125 Pages: 125701-125701
- DOI
  10.1063/1.5089174
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03873, KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-18J22930
[Journal Article] Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals2018
- Author(s)
  Y. Hijikata, T. Horii, Y. Furukawa, Y. Matsushita, T. Ohshima
- Journal Title
  
  Journal of Physics Communications
  
  Volume: 2 Pages: 111003-111003
- DOI
  10.1088/2399-6528/aaede4
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-15H03967
[Journal Article] Structural determination of phosphosilicate glass based on first-principles molecular dynamics calculation2018
- Author(s)
  Kobayashi Takuma、Matsushita Yu-ichiro、Kimoto Tsunenobu、Oshiyama Atsushi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: 1 Pages: 011001-011001
- DOI
  10.7567/1347-4065/aae89b
- NAID
  210000135187
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-18H03873
[Journal Article] Structural stability and energy levels of carbon-related defects in amorphous SiO2 and its interface with SiC2018
- Author(s)
 Matsushita Yu-ichiro、Oshiyama Atsushi
- Journal Title
 
 Jpn. J. Appl. Phys.
 
 Volume: 57 Issue: 12 Pages: 125701-125701
- DOI
 10.7567/jjap.57.125701
- NAID
 210000149880
- ISSN
 0021-4922, 1347-4065
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-18H03873
[Journal Article] Microscopic mechanism of carbon annihilation upon SiC oxidation due to phosphorus treatment: Density functional calculations combined with ion mass spectrometry2018
- Author(s)
  Kobayashi Takuma、Matsushita Yu-ichiro、Okuda Takafumi、Kimoto Tsunenobu、Oshiyama Atsushi
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 12 Pages: 121301-121301
- DOI
  10.7567/apex.11.121301
- NAID
  210000136420
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03873
[Journal Article] Unfolding energy spectra of double-periodicity two-dimensional systems: Twisted bilayer graphene and MoS2 on graphene2018
- Author(s)
  Matsushita Yu-ichiro、Nishi Hirofumi、Iwata Jun-ichi、Kosugi Taichi、Oshiyama Atsushi
- Journal Title
  
  Physical Review Materials
  
  Volume: 2 Pages: 010801-010806
- DOI
  10.1103/physrevmaterials.2.010801
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K18075
[Journal Article] First-Principles Prediction of Densities of Amorphous Materials: The Case of Amorphous Silicon2018
- Author(s)
  Furukawa Yoritaka、Matsushita Yu-ichiro
- Journal Title
  
  Journal of the Physical Society of Japan
  
  Volume: 87 Issue: 2 Pages: 024701-024701
- DOI
  10.7566/jpsj.87.024701
- NAID
  40021463317
- ISSN
  0031-9015, 1347-4073
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K18075
[Journal Article] Periodicity-Free Unfolding Method of Electronic Energy Spectra2017
- Author(s)
  Kosugi Taichi、Nishi Hirofumi、Kato Yasuyuki、Matsushita Yu-ichiro
- Journal Title
  
  Journal of the Physical Society of Japan
  
  Volume: 86 Issue: 12 Pages: 124717-124717
- DOI
  10.7566/jpsj.86.124717
- NAID
  210000134639
- ISSN
  0031-9015, 1347-4073
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K18075
[Journal Article] Comprehensive Study on Band-Gap Variations insp3-Bonded Semiconductors: Roles of Electronic States Floating in Internal Space2017
- Author(s)
  Yu-ichiro Matsushita and Atsushi Oshiyama
- Journal Title
  
  Journal of the Physical Society of Japan
  
  Volume: 86 Issue: 5 Pages: 054702-054702
- DOI
  10.7566/jpsj.86.054702
- ISSN
  0031-9015, 1347-4073
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-16K18075
[Journal Article] Mechanisms of initial oxidation of 4H-SiC (0001) and (000-1) surfaces unraveled by first-principles calculations2017
- Author(s)
  Yu-ichiro Matsushita and Atsushi Oshiyama
- Journal Title
  
  arXiv 1612.00189
  
  Volume: 1 Pages: 1-28
- Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-16K18075
[Journal Article] A novel intrinsic interface state controlled by atomic stacking sequence at interfaces of SiC/SiO22017
- Author(s)
  Yu-ichiro Matsushita and A. Oshiyama
- Journal Title
  
  arXiv:1704.07094
  
  Volume: 1 Pages: 1-5
- Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-16K18075
[Journal Article] Microscopic Mechanism of Carbon Annihilation upon SiC Oxidation due to Phosphorous Treatment: Density-Functional Calculations Combined with Ion Mass Spectroscopy2017
- Author(s)
  Takuma Kobayashi, Yu-ichiro Matsushita, Takafumi Okuda, Tsunenobu Kimoto, and Atsushi Oshiyama
- Journal Title
  
  arXiv:1703.08063
  
  Volume: 1 Pages: 1-14
- Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-16K18075
[Journal Article] Analysis of single and composite structural defects in pure amorphous silicon: A first-principles study2017
- Author(s)
  Furukawa Yoritaka、Matsushita Yu-ichiro
- Journal Title
  
  Journal of Non-Crystalline Solids
  
  Volume: 473 Pages: 64-73
- DOI
  10.1016/j.jnoncrysol.2017.07.031
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K18075
[Journal Article] First-Principles Prediction of Densities of Amorphous Materials: The case of Amorphous Silicon2017
- Author(s)
  Yoritaka Furukawa and Yu-ichiro Matsushita
- Journal Title
  
  arXiv:1704.06107
  
  Volume: 1 Pages: 1-5
- NAID
  40021463317
- Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-16K18075
[Journal Article] A Novel Intrinsic Interface State Controlled by Atomic Stacking Sequence at Interfaces of SiC/SiO22017
- Author(s)
  Matsushita Yu-ichiro、Oshiyama Atsushi
- Journal Title
  
  Nano Letters
  
  Volume: 17 Pages: 6458-6463
- DOI
  10.1021/acs.nanolett.7b03490
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K18075
[Journal Article] First-principles calculations that clarify energetics and reactions of oxygen adsorption and carbon desorption on 4H-SiC (11-20) surface2017
- Author(s)
  Han Li, Yu-ichiro Matsushita, Mauro Boero, and Atsushi Oshiyama
- Journal Title
  
  The Journal of Physical Chemistry C
  
  Volume: 121 Pages: 3920-3928
- DOI
  10.1021/acs.jpcc.6b11942
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18075
[Patent] 量子計算機、量子計算方法及びプログラム2021
- Inventor(s)
  西紘史、小杉太一、松下雄一郎
- Industrial Property Rights Holder
  西紘史、小杉太一、松下雄一郎
- Industrial Property Rights Type
  特許
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-18H03770
[Patent] 量子計算機、量子計算方法及びプログラム2020
- Inventor(s)
  松下雄一郎, 小杉太一, 西紘史
- Industrial Property Rights Holder
  松下雄一郎, 小杉太一, 西紘史
- Industrial Property Rights Type
  特許
- Filing Date
  2020
- Overseas
- Data Source
  KAKENHI-PROJECT-18H03770
[Patent] 炭化ケイ素半導体装置及びその製造方法2019
- Inventor(s)
  松下雄一郎
- Industrial Property Rights Holder
  松下雄一郎
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 高温イオン照射によるhBN中ホウ素空孔欠陥形成2022
- Author(s)
  鈴木哲太，山崎雄一，谷口尚，渡邊賢司, 松下雄一郎，増山雄太，土方泰斗，大島武
- Organizer
  春季応用物理学会
- Data Source
  KAKENHI-PROJECT-20K05352
[Presentation] Theoretical study for Reduction of Interface State Density in SiC-MOSFETs2021
- Author(s)
  Yu-ichiro Matsushita
- Organizer
  International Meeting on Thin Film Interfaces and Composite Crystals, Okayama (2021).
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] ２次元薄膜h-BNのスピン欠陥形成及びその光学特性の測定2021
- Author(s)
  鈴木哲太,，山崎雄一，谷口尚，渡邊賢司，松下雄一郎, 針井一哉，圓谷志郎，増山雄太，土方泰斗，大島武
- Organizer
  秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-20K05352
[Presentation] Reduction of interface state density in the SiC MOS structures by a non-oxidation process2021
- Author(s)
  Tsunenobu Kimoto, Keita Tachiki, Takuma Kobayashi, and Yu-ichiro Matsushita
- Organizer
  2021 International Conference on Solid State Devices and Materials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] An-intio studies on SiC/SiO2: identification of interface states and a theoretical approach to reduce the interface-state density2021
- Author(s)
  Yu-ichiro Matsushita
- Organizer
  International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Quantum algorithms for Green’s functions and linear response functions on quantum computers2020
- Author(s)
  Taichi Kosugi, Yu-ichiro Matsushita
- Organizer
  第81回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 量子コンピュータを用いた分子の線形応答関数の計算2020
- Author(s)
  小杉太一, 松下雄一郎
- Organizer
  第75回日本物理学会年次大会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 第一原理計算によるSiC/SiO2界面近傍の炭素関連欠陥の構造同定2019
- Author(s)
  小林拓真、松下雄一郎
- Organizer
  応用物理学会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 結合クラスター理論による準粒子スペクトル計算：古典と量子コンピュータ上での実装と適用2019
- Author(s)
  松下雄一郎
- Organizer
  第29回日本MRS年次大会
- Invited
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] SiC酸化膜中の窒素関連欠陥の構造とその電子状態2019
- Author(s)
  松下雄一郎、小林拓真
- Organizer
  応用物理学会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Room temperature electronic-controllable quantum devices using single-photon sources in SiC crystals2019
- Author(s)
  Y. Hijikata, Y.-i. Matsushita, and T. Ohshima
- Organizer
  2nd The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Ab-initio study on 4H-SiC(0-33-8)/SiO2 interface structures and its electronic structures2019
- Author(s)
  Yuichiro Matsushita, Tetsuo Hatakeyama
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] りん処理によるSiC/SiO2界面の炭素関連欠陥の低減機構2019
- Author(s)
  小林拓真、松下雄一郎、奥田貴史、木本恒暢、押山淳
- Organizer
  応用物理学会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 同位体酸素を用いたSiC表面に形成される単一光子源の構造推定2019
- Author(s)
  土方泰斗，松下　雄一郎，大島武
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Structure identification and characterization of the single-photon sources formed on the surface of silicon carbide crystal2019
- Author(s)
  Y. Hijikata, Y.-i. Matsushita, and T. Ohshima
- Organizer
  2019 Energy Materials and Nanotechnology on Epitaxy (EMN Meeting on Epitaxy 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Structural and Electronic Properties of Native Point Defects in α-Ga2O32019
- Author(s)
  Takuma Kobayashi, Tomoya Gake, Yu Kumagai, Fumiyasu Oba, Yu-ichiro Matsushita
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 結合クラスター法による分子のグリーン関数の解析2019
- Author(s)
  小杉太一, 松下雄一郎
- Organizer
  2019年日本物理学会秋季大会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 第一原理計算によるSiC酸化膜界面の伝導帯端の揺らぎ　-SiC MOS界面の構造特定に向けて2018
- Author(s)
  松下雄一郎
- Organizer
  先進パワー半導体分科会第12回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 結合クラスター理論と自己エネルギー汎関数理論に基づく原子の電子状態の比較2018
- Author(s)
  小杉太一, 西紘史, 古川頼誉, 松下雄一郎
- Organizer
  日本物理学会　第73回年次大会（2018年）
- Data Source
  KAKENHI-PROJECT-16K18075
[Presentation] 角度分解光電子分光と第一原理計算を用いた層状強磁性V1/3NbS2の電子構造の研究2018
- Author(s)
  吉田訓, 松下雄一郎, 岩田潤一, 厳正輝, 坂野昌人, 下志万貴博, 堀場弘司, 小野寛太, 組頭広志, 長鶴徳彦, 高阪勇輔, 井上克也, 秋光純, 石坂香子
- Organizer
  日本物理学会　第73回年次大会（2018年）
- Data Source
  KAKENHI-PROJECT-16K18075
[Presentation] Coupled-cluster理論に基づくグリーン関数による周期系の電子状態計算2018
- Author(s)
  古川頼誉, 小杉太一, 西紘史, 松下雄一郎
- Organizer
  日本物理学会　第73回年次大会（2018年）
- Data Source
  KAKENHI-PROJECT-16K18075
[Presentation] Quasiparticle spectra based on wave function theory: Application of coupled-cluster theory and self-energy functional theory2018
- Author(s)
  Yu-ichiro Matsushita
- Organizer
  21st Asian Workshop on First-Principles Electronic Structure Calculations (ASIAN-21)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Radiation Efficiency Enhancement of Single Photon Source near Stacking Fault in 4H-SiC Epilayer2018
- Author(s)
  Y. Hijikata, Y. Furukawa, Y.-i. Matsushita, and T. Ohshima
- Organizer
  European Materials Research Society (E-MRS) 2018 Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] SiC/SiO2界面における電子状態とそのデバイスへの影響2017
- Author(s)
  松下雄一郎
- Organizer
  第30期CAMMフォーラム
- Place of Presentation
  アイビーホール（東京）
- Invited
- Data Source
  KAKENHI-PROJECT-16K18075
[Presentation] Floating Electron states in SiC and its impact on the SiC electronic devices2017
- Author(s)
  Yu-ichiro Matsushita
- Organizer
  2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES
- Place of Presentation
  総合文化センター（奈良）
- Year and Date
  2017-11-20
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18075
[Presentation] 第一原理計算によるアモルファスの密度決定手法の提案2017
- Author(s)
  古川頼誉, 松下雄一郎
- Organizer
  日本物理学会　2017年秋季大会プログラム
- Data Source
  KAKENHI-PROJECT-16K18075

1. 大島武 (50354949)

# of Collaborated Projects: 4 results

# of Collaborated Products: 7 results
2. 土方泰斗 (70322021)

# of Collaborated Projects: 4 results

# of Collaborated Products: 7 results
3. 押山淳 (80143361)

# of Collaborated Projects: 3 results

# of Collaborated Products: 4 results
4. 藤ノ木享英 (10361354)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. 櫻井鉄也 (60187086)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 洗平昌晃 (20537427)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 吉岡裕典 (60712528)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 山崎雄一 (10595060)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
9. 牧野俊晴 (20360258)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 五十嵐信行 (40771100)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 磯谷順一 (60011756)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 染谷満 (60783644)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 原田信介 (20392649)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
14. 大場史康

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
15. 梅田享英

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Matsushita Yu-ichiro 松下 雄一郎

Research Projects

Research Products

Co-Researchers

Generation of arbitrary polarized single-photons by injection of spin electric current to a silicon carbide MOS device

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Realization of an entangled photon-pair emitting device using silicon carbide semiconductor

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Elucidation of SiC-MOS interfaces by developing electronic structure calculation methodsPrincipal Investigator

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2次元材料窒化ホウ素への室温でスピン操作・読み出し可能な新規スピン欠陥の創製

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ワイドギャップ半導体MOS界面欠陥の正体の横断的解明

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Multi-scale calculations for complex correlation appearing in SiC oxidation and its impact on electronic propertiesPrincipal Investigator

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Clarification of interface formation and electronic properties of power semiconductors through quantum theoretical computics

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Ab-initio study on correlation between SiC/SiO2 interface structures and electronic propertiesPrincipal Investigator

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[Journal Article] Effect of magnetocrystalline anisotropy on magnetocaloric properties of an AlFe2B2 compound2022

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[Journal Article] Insight into anisotropic magnetocaloric effect of CrI32022

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[Journal Article] Implementation of quantum imaginary-time evolution method on NISQ devices by introducing nonlocal approximation2021

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[Journal Article] Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces2021

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[Journal Article] Construction of Green's functions on a quantum computer: Quasiparticle spectra of molecules2020

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[Journal Article] Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface2020

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Matsushita Yu-ichiro 松下雄一郎