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新藤 浩之  シンドウ ヒロユキ

ORCIDConnect your ORCID iD *help
Researcher Number 90870254
Affiliation (Current) 2025: 国立研究開発法人宇宙航空研究開発機構, 研究開発部門, 主幹研究開発員
Affiliation (based on the past Project Information) *help 2020 – 2022: 国立研究開発法人宇宙航空研究開発機構, 研究開発部門, 主幹研究開発員
Review Section/Research Field
Except Principal Investigator
Basic Section 21060:Electron device and electronic equipment-related
Keywords
Except Principal Investigator
パルスレーザ / BOX層構造 / Radiation Effect / SRAM / Buried Oxide / Single Event Effect / Silicon on Insulator / ナノプローブ測定 / シングルイベント耐性 / SOI基板 / BOX層 / シングルイベント効果
  • Research Projects

    (1 results)
  • Co-Researchers

    (2 People)
  •  Degradation mechanism of Single Event tolerance on SOI devices having abnormal BOX layer structure

    • Principal Investigator
      Sakamoto Keita
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Japan Aerospace EXploration Agency
  • 1.  Sakamoto Keita (60867985)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 2.  竹内 浩造 (00870255)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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