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Ohnishi Kazuki  大西 一生

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大西 一生  オオニシ カズキ

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Researcher Number 90963306
Other IDs
Affiliation (Current) 2025: 三重大学, 研究基盤推進機構, 助教
Affiliation (based on the past Project Information) *help 2023: 名古屋大学, 未来材料・システム研究所, 特任助教
Review Section/Research Field
Principal Investigator
Basic Section 30010:Crystal engineering-related
Keywords
Principal Investigator
p型 / 結晶成長 / 半導体 / 窒化ガリウム / ハライド気相成長法 / GaN
  • Research Projects

    (1 results)
  • Research Products

    (8 results)
  •  p型GaN基板の実現に向けたHVPE成長技術の研究開発Principal Investigator

    • Principal Investigator
      大西 一生
    • Project Period (FY)
      2023 – 2025
    • Research Category
      Grant-in-Aid for Early-Career Scientists
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      Nagoya University

All 2024 2023

All Journal Article Presentation

  • [Journal Article] Sn-doped n-type GaN layer with high electron density of 1020 cm-3 grown by halide vapor phase epitaxy2024

    • Author(s)
      Hamasaki Kansuke、Ohnishi Kazuki、Nitta Shugo、Fujimoto Naoki、Watanabe Hirotaka、Honda Yoshio、Amano Hiroshi
    • Journal Title

      Journal of Crystal Growth

      Volume: 628 Pages: 127529-127529

    • DOI

      10.1016/j.jcrysgro.2023.127529

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K13672, KAKENHI-PROJECT-22K18808
  • [Presentation] 低抵抗n型GaN基板作製に向けた高濃度Sn添加GaNのHVPE成長2024

    • Author(s)
      濵﨑 乾輔, 大西 一生, 新田 州吾, 藤元 直樹, 渡邉 浩崇, 本田 善央, 天野 浩
    • Organizer
      第71回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-23K13672
  • [Presentation] Sn添加GaNのHVPE成長に向けた熱力学的検討2023

    • Author(s)
      大西 一生, 濵﨑 乾輔, 藤元 直樹, 新田 州吾, 渡邉 浩崇, 本田 善央, 天野 浩
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K13672
  • [Presentation] High electron density of Sn-doped GaN layer by halide vapor phase epitaxy2023

    • Author(s)
      Kansuke Hamasaki, Kazuki Ohnishi, Shugo Nitta, Naoki Fujimoto, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano
    • Organizer
      International Conference on Crystal Growth and Epitaxy (ICCGE-20)
    • Data Source
      KAKENHI-PROJECT-23K13672
  • [Presentation] Thermodynamic analysis for halide vapor phase epitaxy of Sn-doped n-type GaN2023

    • Author(s)
      Kazuki Ohnishi, Kansuke Hamasaki, Naoki Fujimoto, Shugo Nitta, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano
    • Organizer
      14th International Conference on Nitride Semiconductors 2023 (ICNS-14)
    • Data Source
      KAKENHI-PROJECT-23K13672
  • [Presentation] HVPE growth of thick Sn-doped GaN layers for preparing low-resistivity n-type GaN substrates2023

    • Author(s)
      Kansuke Hamasaki, Kazuki Ohnishi, Shugo Nitta, Naoki Fujimoto, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano
    • Organizer
      14th International Conference on Nitride Semiconductors 2023 (ICNS-14)
    • Data Source
      KAKENHI-PROJECT-23K13672
  • [Presentation] 高電子密度Sn添加GaNのHVPE成長2023

    • Author(s)
      濵﨑 乾輔, 大西 一生, 新田 州吾, 藤元 直樹, 渡邉 浩崇, 本田 善央, 天野 浩
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K13672
  • [Presentation] 縦型パワーデバイス用途に向けたGaNのHVPE成長2023

    • Author(s)
      大西一生, 濵﨑乾輔, 藤元直樹, 新田州吾, 本田善央, 天野浩
    • Organizer
      第15回ナノ構造エピタキシャル成長講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-23K13672

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