Development of high position resolution and radiation tolerant pixel detector for future collider experiment
Project/Area Number |
18K13571
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Research Category |
Grant-in-Aid for Early-Career Scientists
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Allocation Type | Multi-year Fund |
Review Section |
Basic Section 15020:Experimental studies related to particle-, nuclear-, cosmic ray and astro-physics
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Research Institution | Tokyo Metropolitan College of Industrial Technology (2019-2020) High Energy Accelerator Research Organization (2018) |
Principal Investigator |
Yamada Miho 東京都立産業技術高等専門学校, ものづくり工学科, 助教 (90714668)
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Project Period (FY) |
2018-04-01 – 2021-03-31
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Project Status |
Completed (Fiscal Year 2020)
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Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2019: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2018: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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Keywords | ピクセル検出器 / モノリシック型 / SOI / ILC / 放射線耐性 / ヒッグス / 三次元積層化 / CMOS / 崩壊点検出器 / 高位置分解能 / 高時間分解能 / MOSFET / モノリシック型ピクセル検出器 / 高放射線耐性 |
Outline of Final Research Achievements |
High position resolution monolithic pixel detector using Silicon-on-Insulator(SOI) technology have developed for International Liner Collider Experiment. 3 μm of position resolution is required for precise measurement of Higgs boson property.Prototype sensor, SOFIST, have achieved 1.4 μm of position resolution with 3D stacking technology of SOI chips.Double-SOI wafer which has middle Si layer in buried oxide layer and Fowler-Nordheim tunneling performed compensation of radiation damage (1kGy/year at ILC) of SOI wafer and characteristics of transistors of signal readout circuit.
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Academic Significance and Societal Importance of the Research Achievements |
高エネルギー加速器実験で使用可能なモノリシック型CMOSセンサーとして,1.4μmの位置分解能は世界最高レベルである.また,金マイクロバンプを用いたSOIチップの三次元積層化技術の確立により,20μm角程度の領域内にアナログ・デジタル混在の高機能信号処理回路を実装可能とした.さらに,放射線損傷補償機構を備えたCMOSセンサーは加速器実験のみならず,天文学や放射光施設,医療機器など,放射線を扱うデバイスには広く有用である.
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Report
(4 results)
Research Products
(22 results)
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[Journal Article] Development of a monolithic pixel sensor based on SOI technology for the ILC vertex detector2019
Author(s)
Shun Ono, Miho Yamada, Manabu Togawa, Yasuo Arai, Toru Tsuboyama, Ikuo Kurachi, Kazuhiko Hara, Yoichi Ikegami, Taohan Li, Akimasa Ishikawa
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Journal Title
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume: 924
Pages: 431-435
DOI
Related Report
Peer Reviewed
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[Journal Article] A Monolithic Pixel Sensor with Fine Space-Time Resolution Based on Silicon-on-Insulator Technology for the ILC Vertex Detector2018
Author(s)
Shun Ono, Miho Yamada, Yasuo Arai, Toru Tsuboyama, Manabu Togawa, Teppei Mori, Ikuo Kurachi, Kazuhiko Hara, Yoichi Ikegami, Daisuke Sekigawa, Shun Endo, Akimasa Ishikawa
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Journal Title
Springer Proceedings in Physics
Volume: 213
Pages: 370-374
DOI
ISBN
9789811313158, 9789811313165
Related Report
Peer Reviewed
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