山田 省二  Yamada Shoji

Jpn. J. Appl. Phys.

巻: 53 号: 11 ページ: 118002-118002

10.7567/jjap.53.118002

210000144607

AIP Conf. Proc.

巻: 1566 ページ: 219-220

10.1063/1.4848364

AIP Conf. Proc.

巻: 1566 ページ: 329-330

10.1063/1.4848419

Applied Physics Express

巻: 5 号: 11 ページ: 113001-113001

10.1143/apex.5.113001

10031126453

Proc. 28th Int. Conf. on Physics of Semiconductors

Proc. 28^<th> Int Conf. on Physics of Semiconductors (印刷中)

Physica B 376-377

ページ: 579-583

Physica B 376-377

ページ: 579-583

J. Sci. and Tech. Advanced Materials 6

ページ: 406-410

Solid State Communi., 136,

ページ: 479-483

J. Sci. and Tech. Advanced Materials 6

ページ: 406-410

Solid State Communi., 136

ページ: 479-483

Sold State Commun. 136

ページ: 479-483

Proc., I.6, 12^<th> Int Conf. on Narrow Gap Semiconductors

Proc., I.6, 12^<th> Int Conf. on Narrow Gap Semiconductors

Proc. of 27^<th> Int.Conf. on Physics of Semiconductors

Proc. of 27^<th> Int.Conf. on Physics of Semiconductors

Proc. 27^<th> Int. Conf. on Physics of Semiconductors Part B

ページ: 1373-1374

Proc. of 11^<th> Modulated Semiconductor Structures (MSS-11)

Proceedings of 27th Int. Conf. on Semiconductors, Part B

ページ: 1297-1298

J.Sci.and Tech.Advanced Materials 5

ページ: 301-304

Int.J.Sci. and Tech.Advanced Materials 5

ページ: 301-304

Physica E 22

ページ: 464-467

Proceedings of 27th Int. Conf. on Semiconductors, Part B

ページ: 1373-1374

Proc. 27^<th> Int. Conf. on Physics of Semiconductors Part B

ページ: 1297-1298

J. Sci. and Tech. Advanced Materials 5

ページ: 301-304

Int.J.Sci. and Tech.Advanced Materials 4

ページ: 77-80