赤澤 正道  Akazawa Masamichi

Applied Physics Express

巻: 16 号: 9 ページ: 091002-091002

10.35848/1882-0786/acf644

Phys. Status Solidi B

巻: 257 号: 2

10.1002/pssb.201900367

Japanese Journal of Applied Physics

巻: 59 号: 9 ページ: 096502-096502

10.35848/1347-4065/abac41

120007145358

Japanese Journal of Applied Physics

巻: 59 号: 4 ページ: 046506-046506

10.35848/1347-4065/ab8024

120007000858

Jpn. J. Appl. Phys.

巻: 58 号: SC ページ: SCCB10-SCCB10

10.7567/1347-4065/ab09d5

120006841057

Jpn. J. Appl. Phys.

巻: 58 号: 10 ページ: 106504-106504

10.7567/1347-4065/ab3c49

120006887714

Jpn. J. Appl. Phys.

巻: 58 号: 3 ページ: 030902-030902

10.7567/1347-4065/aafd17

210000135371

Physica Status Solidi B

巻: 254 号: 8

10.1002/pssb.201600691

120006491497

J. Appl. Phys.

巻: 120 号: 22

10.1063/1.4971409

Jpn. J. Appl. Phys.

巻: 53 号: 4S ページ: 04EF06-04EF06

10.7567/jjap.53.04ef06

210000143623

e-Journal of Surface Science and Nanotechnology

巻: 12 ページ: 83-88

130004933800

Phys. Status Solidi C

巻: 11 号: 3-4 ページ: 902-905

10.1002/pssc.201300423

Appl. Phys. Lett.

巻: 102

120005315201

IEICE Transactions on Electronics

巻: E96.C 号: 5 ページ: 686-689

10.1587/transele.E96.C.686

10031193914

Jpn. J. Appl. phys.

巻: 52

210000142769

Appl. Phys. Lett.

巻: 101 号: 12

10.1063/1.4754141

ECS Solid State Letters,

巻: 1 号: 1 ページ: P4-P6

10.1149/2.004201ssl

Appl. Phys. Lerr.

巻: 98 号: 14 ページ: 142117-142117

10.1063/1.3578449

J. Appl. Phys.

巻: 109 号: 1 ページ: 13703-13703

10.1063/1.3527058

Appl. Phys. Lett.

巻: 96 号: 13 ページ: 132104-132104

10.1063/1.3368689

Appl.Phys.Lett.

巻: 96

e-Journal of Surface Science and Nanotechnology Vol. 7

ページ: 122-128

130004439129

J. Korean Physical Society 54(印刷中)

e-Journal of Surface Science and Nanotechnology 7

ページ: 122-128

130004439129

e-Journal of Surface Science and Nanotechnology 7

ページ: 122-128

130004439129

J. Korean Physical Society 54(印刷中)

J. Korean Physical Society vol. 54 (in press)

ページ: 10-10

J. Vac. Sci. Technol. B 26

ページ: 1542-1550

Applied Surface Science 255

ページ: 628-632

phys. stat. sol. c 5

ページ: 1959-1961

Proceeding of International Conference on Indium Phosphide and related Materials 20

ページ: 1-4

Proceedings of International Conference on Indium Phosphide and Related Materials 20

ページ: 1-4

Applied Surface Science Vol. 255, No. 3

ページ: 628-632

phys. stat. sol. (c) 5

ページ: 2729-2732

Applied Surface Science 254

ページ: 8005-8015

Applied Surface Science 254(invited)

ページ: 8005-8015

phys. stat. sol. (c) Vol. 5, No. 6

ページ: 1959-1961

Applied Surface Science 254

ページ: 3653-3666

Applied Surface Science 255(invited)

ページ: 628-632

J. Vac. Sci. Technol. B Vol. 26, No. 4

ページ: 1542-1550

accepted for publication in Proceeding of 20th International Conference on Indium Phosphide and related Materials

J. Vac. Sci. Technol. B 26

ページ: 1569-1578

J. Vac. Sci. Technol. B Vol. 26, No. 4

ページ: 1569-1578

accepted for publication in phys. stat. sol. c 5

phys. stat. sol. (c) 5

ページ: 1959-1961

Applied Siuface Science 254

ページ: 3653-3666

Applied Surface Science Vol. 254, No. 24

ページ: 8005-8015

phys. stat. sol. (c) 5

ページ: 2729-2732

Applied Surface Science Vol. 254

ページ: 3653-3666

Applied Surface Science (in press ; available online) 254

phys. stat. sol. (c) 5

ページ: 1959-1961

accepted for publication in Applied Surface Science 254

J. Vac. Sci. Technol. B 26

ページ: 1569-1578

phys. stat. sol. (c) Vol. 5, No. 9

ページ: 2729-2732

J. Vac. Sci. Technol. B 26

ページ: 1542-1550

physica status solidi (a) 204

ページ: 1034-1040

Applied Surface Science (in press)(accepted for publication)

J. Vac. Sci. Technol. B Vol. 25, No. 4

ページ: 1481-1490

phys. stat. sol. (c) 4

ページ: 2629-2633

J. Vac. Sci. Technol. B 25

ページ: 1481-1490

Journal of Crystal Growth Vol.301-302

ページ: 951-954

120000965574

phys. stat. sol. (c) 4

ページ: 2629-2633

J. Vac. Sci. Technol. B 25

ページ: 1481-1490

phys. stat. sol. (c) Vol. 4, No. 7

ページ: 2629-2633

Journal of Crystal Growth 301-302

ページ: 951-954

physica status solidi (a) Vol. 204, No. 4

ページ: 1034-1040

physica status solidi (a) Vol.204, No.4

ページ: 1034-1040

J. Vac. Sci. Technol B Vol.25, No.4(in press)(accepted for publication)

120000955872

J. Vac. Sci. Technol B Vol.25, No.4(in press)(accepted for publication)

physica status solidi (c) (in press)(accepted for publication)

J. Vac. Sci. Technol. B 25

ページ: 1495-1503

120000955872

Journal of Crystal Growth Vol. 301-302

ページ: 951-954

J. Vac. Sci. Technol. B Vol. 25, No. 4

ページ: 1495-1503

120000955872

Journal de Physique IV Vol. 132

ページ: 249-253

Jpn.J.Appl.Phys. 45・5A

ページ: 4058-4063

40007248579

Jpn.J.Appl.Phys. 45・5A(accepted for publication)(印刷中)

40007248579

Journal de Physique IV Vol.132

ページ: 95-99

120000958460

Collected Abstracts of 2006 RCIQE International Seminar (Sapporo, February 9-10,2006)

ページ: 129-130

Journal de Physique IV 1(accepted for publication)(印刷中)

120000958460

Journal de Physique IV 132

ページ: 249-253

120000953027

Journal of Physique IV 132

ページ: 95-99

120000958460

Abstract of 2006 RCIQE International Seminar for 21^<st> Century COE Program", Sapporo, Japan

ページ: 129-129

Journal de Physique IV 132

ページ: 95-99

120000958460

Collected Abstracts of 2006 RCIQE International Seminar (Sapporo, February 9-10) 1

ページ: 129-130

Jpn.J.Appl.Phys. Vol.45, No.5A

ページ: 4058-4063

40007248579

Journal de Physique IV Vol. 132

ページ: 95-99

Collected Abstracts of 2006 RCIQE International Seminar (Sapporo, February 9-10, 2006) 1

ページ: 129-130

Tech. Report of IEICE vol.104, no.693

ページ: 41-46

110003205119

Collected Abstracts of 2005 RCIQE International Seminar (February 8th-10th,2005,Sapporo)

ページ: 144-144

Optics Lett. vol.30, no.10

ページ: 1210-1212

Jpn.J.Appl.Phys. Vol.44, No.49

10016873536

Collected Abstracts of 2005 RCIQE International Seminar (February 8th-10th,2005,Sapporo)

ページ: 145-145

電子情報通信学会技術報告 ED2005-62

ページ: 25-30

110003205129

Abstract of 2005 RCIQE International Seminar for 21^<st> Century COE Program, Sapporo, Japan

ページ: 144-144

Japan J. Appl. Phys. vol. 44, no. 49

10016873536

電子情報通信学会技術報告 MW2005-133

ページ: 41-46

110003205119

Abstract of 2005 RCIQE International Seminar for 21^<st> Century COE Program, Sapporo, Japan

ページ: 145-145

Abstracts of 10th International Conference on the Formation of Semiconductor Interfaces (Aix-en-Provence, July, 2005) 1

120000958460

Collected Abstracts of 2005 RCIQE International Seminar (Sapporo, February 8-10, 2005) 1

ページ: 145-145

Collected Abstracts of 2005 RCIQE International Seminar (Sapporo, February 8-10, 2005) 1

ページ: 144-144

Jpn.J.Appl.Phys. 44・49

10016873536

Abstracts of 10th International Conference on the Formation of Semiconductor Interfaces (Aix-en-Provence, France, ICFSI-10,July 3-8,2005)

120000958460

Collected Abstracts of 2005 RCIQE International Seminar (Sapporo, February 8-10,2005)

ページ: 145-145

Collected Abstracts of 2005 RCIQE International Seminar (Sapporo, February 8-10,2005)

ページ: 144-144

電子情報通信学会技術報告 MW2005

ページ: 61-66

110003205119

Abstract of 2005 RCIQE International Seminar for 21^<st> Century COE Program, Sapporo, Japan

ページ: 143-143

Tech. Report of IEICE vol.109, no.296

ページ: 51-56

110003179773

IEICE Electronics Express vol.1, no.8

ページ: 232-236

130000088075

電子情報通信学会技術報告 MW2004-133

ページ: 51-56

110003179773

Tech. Report of IEICE vol.109, no.296

ページ: 45-49

110003179772

Technical Report of IEICE ED2004-248

ページ: 41-46

110003205119

Technical Report of IEICE MW2004-133

ページ: 51-56

110003179773

Technical Report of IEICE ED2005-62

ページ: 25-30

110003205129

Jpn.J.Appl.Phys. vol.45, no.5A

ページ: 4058-4063

40007248579