東 清一郎  Higashi Seiichiro

Jpn. J. Appl. Phys.

巻: 62 号: SC ページ: SC1075-SC1075

10.35848/1347-4065/acb1bb

Jpn. J. Appl. Phys.

巻: 57 号: 6S2 ページ: 06JH01-06JH01

10.7567/jjap.57.06jh01

210000149213

Jpn. J. Appl. Phys.

巻: 56 号: 6S2 ページ: 06HE05-06HE05

10.7567/jjap.56.06he05

210000147968

Jpn. J. Appl. Phys

巻: 54 号: 4S ページ: 04DA08-04DA08

10.7567/jjap.54.04da08

Jpn. J. Appl. Phys.

巻: 54 号: 8 ページ: 086503-1

10.7567/jjap.54.086503

210000145520

Jpn.J.Appl.Phys.

巻: 50

210000070175

Jpn. J. Appl. Phys.

巻: Vol.50, No.8 号: 8S2 ページ: 08KE06-08KE06

10.1143/jjap.50.08ke06

Jpn. J. Appl. Phys 49

210000068160

Appl.Phys.Express

巻: 3 ページ: 61401-61401

10027015042

Jpn.J.Appl.Phys.

巻: 49

210000068160

Jpn.J.Appl.Phys.

巻: 48

110008001103

Jpn. J. Appl. Phys 49

210000068062

Jpn.J.Appl.Phys.

巻: 49

210000068062

プラズマ・核融合学会誌 85(3)

ページ: 119-123

Trans. of MRS-J Vol.34,No.2

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130005003983

IEICE Trans. on Electronics Vol.E92-C,No.5

ページ: 616-619

Jpn. J. Appl. Phys 48(4)

Jpn. J. Appl. Phys Vol.47, No.4B

ページ: 3103-3106

Institute of Electronics Informatioii and Communication Engineers Transactions on Electronics E91-C

110006343827

Japanese Journal of Applied Physics 47

Thin Solid Films 517

ページ: 306-308

Japanese Journal of Applied Physics 47(in press)

Japanese Journal of Applied Physics 47

Japanese Journal of Applied Physics 47

ページ: 3103-3106

Electrochemical Society Transaction 16

ページ: 255-260

Japanese Journal of Applied Physics 47

ページ: 3103-3106

Jpn. J. Appl. Phys 47(4)

ページ: 2460-2463

10022549196

Institute of Electronics Information and Communication Engineers Transactions on Electronics E91-C(in press)

110006343827

Thin Solid Films 517

ページ: 306-308

Electrochemical Society Transaction 16

ページ: 255-260

Japanese Journal of Applied Physics 47(in press)

Electrochem. Soc. Trans 13(1)

ページ: 31-36

Japanese Journal of Applied Physics 47

ページ: 3099-3102

210000064670

Institute of Electronics, Information and Communication Engineers Trans. on Electronics 91-C

ページ: 712-715

Jpn. J. of Appl. Phys Vol.47, No.4

ページ: 3099-3102

210000064670

Institute of Electronics, Information and Communication Engineers Trans. on Electronics 91-C

ページ: 712-715

Solid State Phenomena 121-123

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Materials Science Forum 561-565

ページ: 1213-1216

Materials Science Forum 561-565

ページ: 1213-1216

Solid State Phenomena 121-123

ページ: 557-560

Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-34]

ページ: 100-101

Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-39]

ページ: 110-111

2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Seoul, Korea, June 28-30, 2005) [A9.4]

ページ: 177-180

Applied Surface Science 244/1-4

ページ: 75-78

Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-40]

ページ: 112-113

Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]

ページ: 32-33

Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [25P2-32]

ページ: 294-295

Ext. Abst. of The 2005 Int. Conf.on Solid State Devices and Materials [G-2-6]

ページ: 174-175

Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials [H-2-4]

ページ: 126-127

Abst. of 12th Int. conf. on Solid Films and Surfaces(Hamamatsu, June 21-25, 2004) [A5-2]

ページ: 137-137

Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-19]

ページ: 54-55

Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-40]

ページ: 100-101

Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-35]

ページ: 90-91

Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004)

110003175633

Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29,2004)

Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-35]

ページ: 90-91

Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-19]

ページ: 54-55

Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29, 2004) [28P-6-68L]

ページ: 216-217

Abst. of The Fourth Int. conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]

ページ: 32-33

Abst. of 12th Int. conf. on Solid Films and Surfaces (Hamamatsu, June 21-25, 2004 ) [A5-2]

ページ: 137-137

Abst. of The Fourth Int. conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [25P2-32]

ページ: 294-295

Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials (Tokyo, September 15-17, 2004) [H-2-4]

ページ: 126-127

Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004) [A10.5]

ページ: 277-280

110003175633

Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-40]

ページ: 100-101

Ext. Abst. of The 2005 Int. Conf. on Solid State Devices and Materials [G-2-6]

ページ: 174-175

2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Seoul, Korea, June 28-30, 2005) [A9.4]

ページ: 177-180