NAKAMURA Tetsuro 中村哲郎

Researcher Number	00126939
Affiliation (based on the past Project Information) *help	1989 – 1993: 豊橋技術科学大学, 工学部, 教授 1990: 豊橋科学技術大学, 第三工学系, 教授 1987: Toyohashi University of Technology, 工学部, 教授 1986: 豊橋技科大, 工学部, 教授
Review Section/Research Field	Principal Investigator 電子材料工学 / 電子デバイス・機器工学 Except Principal Investigator 電力工学 / 電子材料工学
Keywords	Principal Investigator Al_2O_3 / 磁気検出素子 / 磁気センサ / フラックスゲート / マイクロ立体加工 / マイクロ磁気デバイス / SOI構造 / 薄膜トランジスタ / 気相成長法 / ガスソ-スMBE … More / 選択エピタキシャル成長 / 電子線照射 / 選択成長 / Siヘテロエピタキシャル成長 / エピタキシャル絶縁膜 / SOI / Thin film transistor / Gas source MBE / Selective epitaxy / Electron beam irradiation / エピタキシャルAl_2O_3膜 / ガスソース分子線エピタキシー / 紫外光励起 / シリコン基板 / X線光電子分光法 / 絶縁膜 / 超高真空 / XPS分析 / epitaxial growth of Al_2O_3 films / Gas Source MBE / Ultra-Violet irradiation / silicon substrate … More Except Principal Investigator ガスソ-スMBE / Si / Al_2O_3 / マイクロ運動システム / 微小機械 / マイクロマシ-ニング / マイクロマシン / マイクロメカトロニクス / マイクロアクチュエ-タ / マイクロ理工学 / 紫外光励起 / エキシマレ-ザ / ヘテロエピタキシャル成長 / Al_2O_3 on Si / Si選択エピタキシャル成長 / 電子ビーム照射 / SOI構造 / ガスソースMBE / Si構造 / 電子ビーム描画法 / エピタキシャルAl_2O_3膜 / 選択エピタキシャル成長 / 電子ビ-ム照射 / Si Selective Epitaxy / Electron-beam irradiation / SOI structure / Gas source MBE / Si structure / Epitaxial Al_2O_3 / Electron beam graphic / system Less

Research Projects
(6 results)
Co-Researchers
(7 People)

シリコンのマイクロ立体加工による超高感度磁気検出素子Principal Investigator
- Principal Investigator
  
  中村哲郎
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Toyohashi University of Technology
紫外光励起ガスソ-スMBE法によるエピタキシャル絶縁薄膜の超低温形成に関する研究
- Principal Investigator
  
  ISHIDA Makoto
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Toyohashi University of Technology
In-situ Si selective-epitaxial grown SOI structures using Electron beam graphic system
- Principal Investigator
  
  ISHIDA Makoto
- Project Period (FY)
  1991 – 1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Toyohashi University of Technology
マイクロインテリジェント運動システムの工学的基礎
- Principal Investigator
  
  原島文雄
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  電力工学
- Research Institution
  The University of Tokyo
Formation of Ultra-Thin Hetero-Epitaxial SOI Structure and Its Application to Thin Film Transistors.Principal Investigator
- Principal Investigator
  
  NAKAMURA Tetsuro
- Project Period (FY)
  1989 – 1990
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Toyohashi University of Technology
Fundamental Research of Epitaxial Growth of Insulator Films Using Ultra-Violet IrradiationPrincipal Investigator
- Principal Investigator
  
  NAKAMURA Tetsuro
- Project Period (FY)
  1986 – 1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Toyohashi University of Technology

1. ISHIDA Makoto (30126924)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
2. KAWAHITO Shoji (40204763)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
3. 原島文雄 (60013116)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 藤田博之 (90134642)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 林輝 (40016762)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 江刺正喜 (20108468)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. NAMIKI Akira (40126941)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

NAKAMURA Tetsuro 中村 哲郎

Research Projects

Co-Researchers

シリコンのマイクロ立体加工による超高感度磁気検出素子Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

紫外光励起ガスソ-スMBE法によるエピタキシャル絶縁薄膜の超低温形成に関する研究

Principal Investigator

Project Period (FY)

Research Category

Research Institution

In-situ Si selective-epitaxial grown SOI structures using Electron beam graphic system

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

マイクロインテリジェント運動システムの工学的基礎

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Formation of Ultra-Thin Hetero-Epitaxial SOI Structure and Its Application to Thin Film Transistors.Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fundamental Research of Epitaxial Growth of Insulator Films Using Ultra-Violet IrradiationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

NAKAMURA Tetsuro 中村哲郎