NAKAMURA Tetsuro 中村哲郎

Researcher Number	00126939
Affiliation *help	1989 – 1993 : 豊橋技術科学大学, 工学部, 教授 1990 : 豊橋科学技術大学, 第三工学系, 教授 1987 : Toyohashi University of Technology, 工学部, 教授 1986 : 豊橋技科大, 工学部, 教授
Review Section/Research Field	Principal Investigator 電子材料工学 / 電子デバイス・機器工学 Except Principal Investigator 電力工学 / 電子材料工学
Keywords	Principal Investigator Al_2O_3 / ガスソ-スMBE / X線光電子分光法 / 紫外光励起 / Gas source MBE / マイクロ磁気デバイス / 気相成長法 / フラックスゲート / 磁気検出素子 / 選択成長 … More Except Principal Investigator ガスソ-スMBE / Si / Al_2O_3 / 微小機械 / マイクロマシ-ニング / 紫外光励起 / Gas source MBE / SOI structure / マイクロマシン / ガスソースMBE / マイクロメカトロニクス / マイクロ運動システム / 電子ビ-ム照射 / Si structure / system / エキシマレ-ザ / Si選択エピタキシャル成長 / Si Selective Epitaxy / SOI構造 / Si構造 / エピタキシャルAl_2O_3膜 / 電子ビーム照射 / 選択エピタキシャル成長 / ヘテロエピタキシャル成長 / 電子ビーム描画法 / Electron-beam irradiation / Electron beam graphic / マイクロアクチュエ-タ / Epitaxial Al_2O_3 / Al_2O_3 on Si / マイクロ理工学 Less

Research Projects
(6results)
Co-Researchers
(7People)

シリコンのマイクロ立体加工による超高感度磁気検出素子Principal Investigator
- Principal Investigator
  
  中村哲郎
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Toyohashi University of Technology
紫外光励起ガスソ-スMBE法によるエピタキシャル絶縁薄膜の超低温形成に関する研究
- Principal Investigator
  
  ISHIDA Makoto
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Toyohashi University of Technology
In-situ Si selective-epitaxial grown SOI structures using Electron beam graphic system
- Principal Investigator
  
  ISHIDA Makoto
- Project Period (FY)
  1991 – 1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Toyohashi University of Technology
マイクロインテリジェント運動システムの工学的基礎
- Principal Investigator
  
  原島文雄
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Co-operative Research (B)
- Research Field
  
  電力工学
- Research Institution
  The University of Tokyo
Formation of Ultra-Thin Hetero-Epitaxial SOI Structure and Its Application to Thin Film Transistors.Principal Investigator
- Principal Investigator
  
  NAKAMURA Tetsuro
- Project Period (FY)
  1989 – 1990
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Toyohashi University of Technology
Fundamental Research of Epitaxial Growth of Insulator Films Using Ultra-Violet IrradiationPrincipal Investigator
- Principal Investigator
  
  NAKAMURA Tetsuro
- Project Period (FY)
  1986 – 1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  Toyohashi University of Technology

1. ISHIDA Makoto (30126924)

# of Collaborated Projects : 4results

# of Collaborated Products : 0results
2. KAWAHITO Shoji (40204763)

# of Collaborated Projects : 3results

# of Collaborated Products : 0results
3. 原島文雄 (60013116)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
4. 藤田博之 (90134642)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
5. 林輝 (40016762)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
6. 江刺正喜 (20108468)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
7. NAMIKI Akira (40126941)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results

NAKAMURA Tetsuro 中村 哲郎

Research Projects

Co-Researchers

シリコンのマイクロ立体加工による超高感度磁気検出素子Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

紫外光励起ガスソ-スMBE法によるエピタキシャル絶縁薄膜の超低温形成に関する研究

Principal Investigator

Project Period (FY)

Research Category

Research Institution

In-situ Si selective-epitaxial grown SOI structures using Electron beam graphic system

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

マイクロインテリジェント運動システムの工学的基礎

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Formation of Ultra-Thin Hetero-Epitaxial SOI Structure and Its Application to Thin Film Transistors.Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fundamental Research of Epitaxial Growth of Insulator Films Using Ultra-Violet IrradiationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

NAKAMURA Tetsuro 中村哲郎