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NAKAMURA Tetsuro
中村 哲郎
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Researcher Number
00126939
Affiliation (based on the past Project Information)
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1989 – 1993: 豊橋技術科学大学, 工学部, 教授
1990: 豊橋科学技術大学, 第三工学系, 教授
1987: Toyohashi University of Technology, 工学部, 教授
1986: 豊橋技科大, 工学部, 教授
Review Section/Research Field
Principal Investigator
電子材料工学
/
電子デバイス・機器工学
Except Principal Investigator
電力工学
/
電子材料工学
Keywords
Principal Investigator
Al_2O_3 / 磁気検出素子 / 磁気センサ / フラックスゲート / マイクロ立体加工 / マイクロ磁気デバイス / SOI構造 / 薄膜トランジスタ / 気相成長法 / ガスソ-スMBE
…
More
/ 選択エピタキシャル成長 / 電子線照射 / 選択成長 / Siヘテロエピタキシャル成長 / エピタキシャル絶縁膜 / SOI / Thin film transistor / Gas source MBE / Selective epitaxy / Electron beam irradiation / エピタキシャルAl_2O_3膜 / ガスソース分子線エピタキシー / 紫外光励起 / シリコン基板 / X線光電子分光法 / 絶縁膜 / 超高真空 / XPS分析 / epitaxial growth of Al_2O_3 films / Gas Source MBE / Ultra-Violet irradiation / silicon substrate
…
More
Except Principal Investigator
ガスソ-スMBE / Si / Al_2O_3 / マイクロ運動システム / 微小機械 / マイクロマシ-ニング / マイクロマシン / マイクロメカトロニクス / マイクロアクチュエ-タ / マイクロ理工学 / 紫外光励起 / エキシマレ-ザ / ヘテロエピタキシャル成長 / Al_2O_3 on Si / Si選択エピタキシャル成長 / 電子ビーム照射 / SOI構造 / ガスソースMBE / Si構造 / 電子ビーム描画法 / エピタキシャルAl_2O_3膜 / 選択エピタキシャル成長 / 電子ビ-ム照射 / Si Selective Epitaxy / Electron-beam irradiation / SOI structure / Gas source MBE / Si structure / Epitaxial Al_2O_3 / Electron beam graphic / system
Less
Research Projects
(
6
results)
Co-Researchers
(
7
People)
Project Start Year (Newest)
Project Start Year (Oldest)
シリコンのマイクロ立体加工による超高感度磁気検出素子
Principal Investigator
Principal Investigator
中村 哲郎
Project Period (FY)
1993 – 1994
Research Category
Grant-in-Aid for General Scientific Research (C)
Research Field
電子デバイス・機器工学
Research Institution
Toyohashi University of Technology
紫外光励起ガスソ-スMBE法によるエピタキシャル絶縁薄膜の超低温形成に関する研究
Principal Investigator
ISHIDA Makoto
Project Period (FY)
1991
Research Category
Grant-in-Aid for Scientific Research on Priority Areas
Research Institution
Toyohashi University of Technology
In-situ Si selective-epitaxial grown SOI structures using Electron beam graphic system
Principal Investigator
ISHIDA Makoto
Project Period (FY)
1991 – 1992
Research Category
Grant-in-Aid for General Scientific Research (B)
Research Field
電子材料工学
Research Institution
Toyohashi University of Technology
マイクロインテリジェント運動システムの工学的基礎
Principal Investigator
原島 文雄
Project Period (FY)
1990
Research Category
Grant-in-Aid for Co-operative Research (B)
Research Field
電力工学
Research Institution
The University of Tokyo
Formation of Ultra-Thin Hetero-Epitaxial SOI Structure and Its Application to Thin Film Transistors.
Principal Investigator
Principal Investigator
NAKAMURA Tetsuro
Project Period (FY)
1989 – 1990
Research Category
Grant-in-Aid for General Scientific Research (B)
Research Field
電子材料工学
Research Institution
Toyohashi University of Technology
Fundamental Research of Epitaxial Growth of Insulator Films Using Ultra-Violet Irradiation
Principal Investigator
Principal Investigator
NAKAMURA Tetsuro
Project Period (FY)
1986 – 1987
Research Category
Grant-in-Aid for General Scientific Research (B)
Research Field
電子材料工学
Research Institution
Toyohashi University of Technology
# of Projects (Dsc)
# of Projects (Asc)
1.
ISHIDA Makoto
(30126924)
# of Collaborated Projects:
4 results
# of Collaborated Products:
0 results
2.
KAWAHITO Shoji
(40204763)
# of Collaborated Projects:
3 results
# of Collaborated Products:
0 results
3.
原島 文雄
(60013116)
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
4.
藤田 博之
(90134642)
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
5.
林 輝
(40016762)
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
6.
江刺 正喜
(20108468)
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
7.
NAMIKI Akira
(40126941)
# of Collaborated Projects:
1 results
# of Collaborated Products:
0 results
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