ONO Hiroshi 小野洋

Researcher Number	00134867
Other IDs
Affiliation (based on the past Project Information) *help	2011: 電気通信大学, 大学院・情報理工学研究科, 助教 2010 – 2011: 電気通信大学, 情報理工学研究科, 助教 2007 – 2009: The University of Electro-Communications, Faculty of Electro-Communications, Research Associate 2005 – 2006: 電気通信大学, 電気通信学部, 助手 1996 – 2003: 電気通信大学, 電気通信学部, 助手 1992 – 1994: 電気通信大学, 電気通信学部, 助手 1988 – 1990: 電気通信大学, 電気通信学部, 助手
Review Section/Research Field	Except Principal Investigator Electronic materials/Electric materials / Astronomy / 電子材料工学 / Electronic materials/Electric materials / 電子デバイス・機器工学 / Astronomy
Keywords	Except Principal Investigator 星間塵 / 炭素質物質 / 光酸化 / ガス中蒸発法 / プラズマ / 変質 / QCC / 可視領域発光 / 量子サイズ効果 / Siナノ構造 … More / テトラゴナル構造 / フォトルミネッセンス / クラスター / 高圧相 / 低誘電率材料 / クーロンブロッケード / 合成実験 / 星間空間 / 紫外線 / ダイヤモンド / 表面 / diamond / HMDS / plasma / シリコン / 低温酸化膜 / 界面準位 / フレキシブル基板 / ゲート酸化膜 / 真空蒸着 / ナノ粉末 / 低温作製 / quasi-static C-V / 界面準位密度 / シリコン酸化膜 / 紫外光 / MOS / 真空紫外光 / SiOナノ粉末 / C-t / 酸化 / SiO_2 / C-V / ポーラスSi / 発光強度の温度依存性 / 微粒子表面 / 界面 / 人工原子 / クラスタビーム法 / Ge超微粒子 / エレクトロルミネッセンス / SiO_x(x<2) / 多孔質Si / ESR / P_bセンター / SiドープSiO_2ガラス / 化成温度 / 熱分析 / Visible Light Emission / Gas Evaporation Method / Porous Si / Temerature Dependence of Emission lntensity / Quantum Size Effect / Surface / lnterface of Fine Particles / 共役高分子 / 分子線エピタキシ- / 有機半導体 / 分子線エピタキシー / conjugated polymers / MBE / organic semiconductors / ナノ構造新物質 / 高分解能電子顕微鏡 / X線光電子分光法 / Siドープガラス / 多層膜反射鏡 / ダイヤモンドアンビル法 / 価電子帯電子構造 / プラズモンエネルギー / ナノ構造 / クラスタ / Nanostructured New Materials / Cluster / High Resolution TEM / XPS / High Pressure Form / Low dielectric Constant Material / Si-doped Glass / Multi-Layered Reflector / カーボンオニオン / 赤外線スペクトル / 紫外線スペクトル / 炭素質星間塵 / 炭素 / Interstellar Dust / Carbonaceous Material / Carbon Onion / Infrared Spectrum / Ultraviolet Spectrum / Synthesis / Plasma / 220nm吸収 / 赤外未同定バンド / メチレン / 水素付加 / 星間麈 / 紫外線吸収 / 微粒子 / 低温 / 炭素物質 / interestellar dust / 220nm-bump / carbonaceous materials / unidentified infrared band / methylene / addition of hydrogen / SiO_x超微粒子膜 / 低誘電率層間絶縁膜 / 全反射X線 / 多孔質度 / FTIR / カズ中蒸発法 / 空孔率 / 層間絶縁膜 / 酸化シリコンナノポーラス薄膜 / Gas evaporation Technique / Nano-porous SiOx / Low dielectric materials / X-ray total reflection method / Porosity / FT-IR / グリフィス大学 / 半導体位置センサー / MOVPE法 / 粒状金属薄膜 / クラスタービーム蒸発法 / 相転移 / Position Sensitive Detector (PSD) / HBT / 半導体位置センター / ナノ構造デバイス / MEMS / 電子線ソングラフィー / 集積デバイス / Griffith University / Semiconductor Position Sensitive Detector / MOVPE / Granular Metal Film / Coulomb Blockade / Cluster-Beam Evaporation / Phase Transformation / High-Pressure Form / 塵 / 炭素質 / 天体 / 質量分析 / 赤外スペクトル / 実験 / メタン / PAH / 星周塵 / Carbonaceous dust / processing of dusts / infrared spectra / interstellar / mass-spectrum / 星雲 / オリビン / エンスタタイト / シリケート / 光電子放出 / パイロキシン / 水素プラズマ / アモルファス炭素 / X線光電子分光 / マイクロ波 / diffuse cloud / olivine / enstatite / silicate / UV / interstellar dust / carbonaceous material / 半導体微粒子 / 多層薄膜 / イオンビ-ムスパッタ法 / ア-ク放電法 / ガス蒸発法 / イオンビームスパッタ法 / Semiconductor fine particles / Multi-layered Thin films / Ion-beam sputtering / Arc discharge technique / Gasーevaporation technique / Quantumーsize effects / Photoluminescence Less

Fabrication of high-quality gate oxide at low temperature by evaporation of SiO nanopowder for flexible ICs
- Principal Investigator
  
  NOZAKI Shinji
- Project Period (FY)
  2008 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Electro-Communications
Study of dust surface for molecular formation in diffuse cloud
- Principal Investigator
  
  WADA Setsuko
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Astronomy
- Research Institution
  The University of Electro-Communications
Study of Chemical Processing of Carbonaceous Dust
- Principal Investigator
  
  WADA Setsuko
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Astronomy
- Research Institution
  The University of Electro-Communications
Research for the origin of an interstellar 220 nm bump
- Principal Investigator
  
  WADA Setsuko
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Astronomy
- Research Institution
  The University of Electro-Communications
NANO-POROUS SiOx THIN FILMS FOR APPLICATION OF LOW DIELECTRIC MATERIALS
- Principal Investigator
  
  UCHIDA Kazuo
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Electro-Communications
Collaboration of Education/Research on Nano-Structgured Semiconductor Devices
- Principal Investigator
  
  MORISAKI Hiroshi
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  The University of Electro-Communications
Structure of interstellar carbonaceous dusts and their surface.
- Principal Investigator
  
  WADA Setsuko
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Astronomy
- Research Institution
  The University of Electro-Communications
Fabrication of Semiconductor Nanostructured New Materials and Applications to Functional Devices
- Principal Investigator
  
  MORISAKI Hiroshi
- Project Period (FY)
  1996 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Electro-Communications
Molecular beam Epitaxy of conjugated polymers and their application to electronics
- Principal Investigator
  
  NOZAKI Shinji
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Electro-Communications
Optical Properties of Si Ultrafine Particles and the Applications to Light-Emitting Devices
- Principal Investigator
  
  MORISAKI Hiroshi
- Project Period (FY)
  1992 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  The University of Electro-Communications
Electrical and Optical Properties of Granular Semiconductor Thin Films and Their Applications tO Electronic Devices
- Principal Investigator
  
  MORISAKI Hiroshi
- Project Period (FY)
  1988 – 1990
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  The University of Electro-Communications

All 2011 2010 2009 2008

All Journal Article Presentation

[Journal Article] High-quality oxide formed by evaporation of SiO nanopowder : Application to MOSFET's on plastic substrates and GaN epilayers2009
- Author(s)
  S.Nozaki, S.Kimura, A.Koizumi, H.Ono, K.Uchida
- Journal Title
  
  Materials Science in Semiconductor Processing 11
  
  Pages: 384-389
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360137
[Journal Article] High-quality oxideformed by evaporation of SiO nanopowder : Application to MOSFET's on plasticsubstrates and GaN epilayers2009
- Author(s)
  S. Nozaki, S. Kimura, A. Koizumi, H. Onoand K. Onoand K. Uchida
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 11 Pages: 384-389
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360137
[Journal Article] Photoluminescence of Si nanocrystals formed by thephotosynthesis2008
- Author(s)
  S. Nozaki, C. Y. Chen, S. Kimura, H. Ono, K. Uchida
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 50-54
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360137
[Journal Article] Photoluminescence of Si nanocrystals formed by the photosynthesis2008
- Author(s)
  S.Nozaki, C.Y.Chen, S.Kimura, H.Ono, K.Uchida
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 50-54
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360137
[Journal Article] Photoluminescence of Sinanocrystals formed by the photosynthesis2008
- Author(s)
  S. Nozaki, C. Y. Chen, S. Kimura, H. Ono, and K. Uchida
- Journal Title
  
  Thin Solid Films
  
  Volume: 517 Pages: 50-54
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360137
[Presentation] UV酸化による半導体ニッケル酸化物の作製2011
- Author(s)
  張東元、小泉淳、小野洋、内田和男、野崎眞次
- Organizer
  電気通信大学・東京農工大学第8回合同シンポジウム
- Place of Presentation
  東京農工大学
- Year and Date
  2011-12-10
- Data Source
  KAKENHI-PROJECT-20360137
[Presentation] C-t法による低温酸化膜MOSキャパシターの電気的特性評価2010
- Author(s)
  高井伸彰、小池俊平、小野洋、内田和男、野崎眞次
- Organizer
  電子情報通信学会東京支部学生会
- Place of Presentation
  東京電機大学
- Year and Date
  2010-03-13
- Data Source
  KAKENHI-PROJECT-20360137
[Presentation] 真空紫外光照射によるSi/SiO2界面構造の改質2010
- Author(s)
  山崎政宏、小泉淳、小野洋、内田和男、野崎眞次
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-20360137
[Presentation] C-t法による低温酸化膜MOSキャパシターの電気的特性評価2010
- Author(s)
  高井伸彰, 小池俊平, 小野洋, 内田和男, 野崎眞次
- Organizer
  電子情報通信学会東京支部学生会講演論文集
- Place of Presentation
  東京電機大学
- Year and Date
  2010-03-13
- Data Source
  KAKENHI-PROJECT-20360137
[Presentation] SiOナノ粉末への光照射によるSiナノクリスタルの形成機構2010
- Author(s)
  杉本真矩、小泉淳、小野洋、内田和男、野崎眞次
- Organizer
  第30回表面科学学術講演会
- Place of Presentation
  大阪大学
- Year and Date
  2010-11-05
- Data Source
  KAKENHI-PROJECT-20360137
[Presentation] C-t法による低温酸化膜MOSキャパシターの電気的特性評価2010
- Author(s)
  高井伸彰、小池俊平、小野洋、内田和男、野崎眞次
- Organizer
  電子情報通信学会東京支部学生会講演会
- Place of Presentation
  東京電機大学
- Year and Date
  2010-03-13
- Data Source
  KAKENHI-PROJECT-20360137
[Presentation] SiOナノ粒子への光照射によるシリコンナノ結晶の形成機構2009
- Author(s)
  杉本真矩、小泉淳、小野洋、内田和男、野崎真次
- Organizer
  電気通信大学・東京農工大学第6回合同シンポジウム
- Place of Presentation
  東京農工大学
- Year and Date
  2009-12-05
- Data Source
  KAKENHI-PROJECT-20360137
[Presentation] High-quality oxide formed by evaporation of SiO nanopowder : Application to MOSFET's on plastic substrates and GaN epilayers(招待講演)2008
- Author(s)
  S. Nozaki, S. Kimura, A. Koizumi, H. Ono, K. Uchida
- Organizer
  The E-MRS 2008 Spring Meeting, SymposiumJ
- Place of Presentation
  Strasbourg, France
- Year and Date
  2008-05-30
- Data Source
  KAKENHI-PROJECT-20360137
[Presentation] High-quality oxideformed by evaporation of SiO nanopowder : Application to MOSFET's on plasticsubstrates and GaN epilayers2008
- Author(s)
  S. Nozaki, S. Kimura, A. Koizumi, H. Onoand K. Uchida
- Organizer
  The E-MRS2008 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2008-05-30
- Data Source
  KAKENHI-PROJECT-20360137
[Presentation] SiO粉末への光照射によるSiナノ結晶の形成2008
- Author(s)
  李宰盛、野崎真次、小泉淳、内田和男、小野洋
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-20360137
[Presentation] High-quality oxide formed by evaporation of SiO nanopowder : Application to MOSFET's on plastic substrates and GaN epilayers2008
- Author(s)
  S.Nozaki, S.Kimura, A.Koizumi, H.Ono, K.Uchida
- Organizer
  The E-MRS 2008 Spring Meeting
- Place of Presentation
  Strasbourg, France(招待講演)
- Year and Date
  2008-05-30
- Data Source
  KAKENHI-PROJECT-20360137

1. MORISAKI Hiroshi (00029167)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
2. WADA Setsuko (30017404)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
3. NOZAKI Shinji (20237837)

# of Collaborated Projects: 3 results

# of Collaborated Products: 16 results
4. NARISAWA Takatoshi (30143712)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. UCHIDA Kazuo (80293116)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. TAKAHASHI Kiyoshi (10016313)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. MURATA Yoshitada (10080467)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

ONO Hiroshi 小野 洋

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[Journal Article] High-quality oxide formed by evaporation of SiO nanopowder : Application to MOSFET's on plastic substrates and GaN epilayers2009

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[Journal Article] High-quality oxideformed by evaporation of SiO nanopowder : Application to MOSFET's on plasticsubstrates and GaN epilayers2009

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[Journal Article] Photoluminescence of Si nanocrystals formed by thephotosynthesis2008

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[Journal Article] Photoluminescence of Si nanocrystals formed by the photosynthesis2008

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[Journal Article] Photoluminescence of Sinanocrystals formed by the photosynthesis2008

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[Presentation] UV酸化による半導体ニッケル酸化物の作製2011

ONO Hiroshi 小野洋