Watanabe Masahiro 渡辺正裕

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WATANABE Masahiro 渡辺正裕

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Researcher Number	00251637
Other IDs
Affiliation (Current)	2025: 東京科学大学, 工学院, 准教授
Affiliation (based on the past Project Information) *help	2007 – 2008: 東京工業大学, 大学院・総合理工学研究科, 准教授 2006: 東京工業大学, 大学院総合理工学研究科, 助教授 1999 – 2005: 東京工業大学, 大学院・総合理工学研究科, 助教授 2000: Department of Information Processing, Tokyo Institute of Technology. Associate Professor, 大学院・総合理工学研究科・物理情報システム創造専攻, 助教授 1995 – 1998: 東京工業大学, 量子効果エレクトロニクス研究センター, 助教授 1996: Tokyo Institute of Technology, Research Center for Quantum Effect Electronics, A, 量子エレクトロニクス研究センター, 助教授 1994: 東京工業大学, 工学部, 助手
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials Except Principal Investigator 電子デバイス・機器工学 / Electronic materials/Electric materials / Electron device/Electronic equipment / 表面界面物性
Keywords	Principal Investigator 弗化カルシウム / フォトルミネッセンス / 量子閉じこめ効果 / エピタキシャル成長 / シリコン / current injection luminescence / photoluminescence / Calcium fluoride / 電流注入発光 / nanocrystal … More / Ultra violet / epitaxial growth / Zinc oxide / スパッタ法 / 同時ドーピング / 紫外線発光 / 酸化亜鉛 / photonic materal / ナノクリスタルシリコン / 絶縁体半導体ヘテロ構造 / Integrated Circuit / Quantum Cascade Lasers / Resonant Tunneling Diode / Quantum devices / Silicon / CdF_2 / CaF_2 / Heterostructure / ローカルエピタキシー / 微小孔 / サブバンド / 微分負性抵抗 / 弗化カドミウム / 微細加工 / コバルトシリサイド / 量子カスケードレーザ / 共鳴トンネル構造 / 不揮発メモリ / サブバンド間遷移レーザ / 共鳴トンネルダイオード / 量子効果デバイス / シリコン基板 / フッ化カドミウム / フッ化カルシウム / ヘテロ構造 / photonic material / アクセプタ / 紫外発光 / ヘテロエピタキシー / single crystal / quantum confinement / super heterosturcture / nanocrystalline silicon / 絶縁体半導体へテロ構造 / シリコンナノ微結晶 / 金属絶縁体半導体ヘテロ構造 / 可視発光 / シリコンナノ微粒子 / 金属絶縁体ヘテロ構造 … More Except Principal Investigator 金属 / 共鳴トンネルダイオード / フォトンアシストトンネル / 弗化カルシウム / CdF_2 / CaF_2 / 絶縁体 / Metal / 電子波ビート / 量子効果デバイス / 絶縁体超格子 / Si / ナノ領域エピタキシー / semiconductor heterostructures / insulator / Cadmium fluoride / Calcium fluoride / フッ化カドミウム / フッ化カルシウム / 半導体 / 共鳴トンネル構造 / テラヘルツ平面パッチアンテナ / テラヘルツ増幅素子 / イオン化ビーム結晶成長 / コバルトシリサイド / 高調波テラヘルツ発振 / テラヘルツデバイス / terahertz harmonic oscillation / integrated terahertz antennas / nano-area local epitaxy / CoSi2 / CdF2 / CaF2 / metal-insulator-semiconductor quantum structures / resonant tunneling structures / terahertz devices / テラヘルツ三端子素子 / サブバンド間遷移レーザ / ナノ傾城エピタキシー / フッ化物ヘテロ接合 / 半導体ナノ構造 / テラヘルツ増幅・発振素子 / 絶体 / 集積テラヘルツアンテナ / ナノ領城エピタキシー / CoSi_2 / 半導体量子構造 / Integrated high functional devices / drain MOSFET / Schottky source / Vertical MOSFET / Nano-area local epitaxy / Heterostructures with fluoride materials / Resonant tunneling diode / Quantum effect devices / 集積高機能素子 / ドレインMOSFET / ショットキーソース / 縦型MOSFET / フッ化物系ヘテロ接合 / 絶縁体ヘテロ接合 / resonant tunneling diode / Si heterostructures / coherent superradiance / beat of electron waves / photon-assisted tunneling / nanostructures / Triode in optical range / Siヘテロ接合 / コヒーレント超放射 / ナノ構造 / 光領域三端子素子 / Ionized beam epitaxy / Quantum-effect devices / Ultra-small devices / Resonant tunneling diodes / 極微細デバイス / 半導体ヘテロ接合 / insulator superlattice / Semiconductor / Terahertz planar patch antenna / Beating of electron waves / Photon-assisted tunneling / Resonant tunneling structure / Terahertz amplifier device / 半導体超挌子 / 半導体超格子 / Planar Patch Antenna / Photon-Assisted Tunneling / Resonant Tunneling Structure / Ionized-Beam Epitaxy / Calcium Fluoride / Cobalt silicide / Insulator Super lattice / Terahertz Device / lnAlAsヘテロ構造 / GalnAs / 絶緑体多層構造 / テラヘルツ用平面パッチアンテナ / テラヘルツ検波 / イオン化ビーム成長法 / quantum interference transistor / hot electron interference / quantum-effect devices / ion-beam epitaxy / calcium fluoride / cobalt silicide / metal-insulator superlattice / 極微細電子デバイス / 多重微分負性抵抗特性 / ホットエレクトロン / 量子サイズ効果 / 金属-絶縁体ヘテロ接合 / 量子干渉トランジスタ / ホットエレクトロンの干渉 / オフセット給電アンテナ / 電圧制御発振 / InGaAs / 集積スロットアンテナ / アレイ構造 / 発振素子 / InP / AlAs / 集積スロットアンテナInGaAs / シリコン / サブバンド / ナノ領域ローカルエピタキシー / 量子構造 / 微分負性抵抗 / 弗化カドミウム / ホットエレクトロントランジスタ / 電子波 / ホットエレクトロン観測 / 電子ビーム露光法 / 金属絶縁体ヘテロ構造 Less

Study of terahertz electron devices with high power in wide frequency range using quantum nanostructures
- Principal Investigator
  
  ASADA Masahiro
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Interaction between terahertz photons and electron waves in quantum structures and its application to ultra-high frequency devices
- Principal Investigator
  
  ASADA Massahiro
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Fabrication of Super-Heterostructures for Advanced Optoelectronic Quantum DevicesPrincipal Investigator
- Principal Investigator
  
  WATANABE Masahiro
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
絶縁体/半導体異種材料単結晶超格子を用いたサブバンド間遷移レーザの研究
- Principal Investigator
  
  ASADA Masahiro
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo Institute of Technology
A Fundamental Study of Triode Amplifier Devices in the Optical Range
- Principal Investigator
  
  ASADA Masahiro
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo Institute of Technology
A Study of Metal/Insulator/Semiconductor Super-Heterostructure Material Systems for Multifunctional Electron Devices
- Principal Investigator
  
  ASADA Masahiro
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
Fluoride/Oxide Super Hetero-nanostructures for Advanced Photonic DevicesPrincipal Investigator
- Principal Investigator
  
  WATANABE Masahiro
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOKYO INSTITUTE OF TECHNOLOGY
Beating Effect of Traveling Electron Waves bv Terahertz Electromagnetic Wave and Its Application to Ultra-High Speed Three-Terminal Devices
- Principal Investigator
  
  ASADA Masahiro
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo Institute of Technology
A Study of High-Functional Material System for Opto-Electronic Integrated Devices with Metal/Insulator Heterostructure Superlattices
- Principal Investigator
  
  ASADA Masahiro
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
Fundamental study of light emitting devices on silicon substrate using nanocrystalline heterostructures formed in single crystalline insulatorPrincipal Investigator
- Principal Investigator
  
  WATANABE Masahiro
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOKYO INSTITUTE OF TECHNOLOGY
Fundamental Research for Three-Terminal Amplifier Device in the Terahertz Range Using Photon-Assisted Tunneling
- Principal Investigator
  
  ASADA Masahiro
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  TOKYO INSTITUTE OF TECHNOLOGY
Fundamental study for quantum effect devices using nanocrystalline silicon formed in single crystalline insulatorPrincipal Investigator
- Principal Investigator
  
  WATANABE Masahiro
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOKYO INSTITUTE OF TECHNOLOGY
絶縁体中に形成されたナノ微結晶シリコンを用いた量子効果光素子の基礎研究Principal Investigator
- Principal Investigator
  
  渡辺正裕
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
真空電子波デバイスの為のエピタキシャル金属/絶縁体構造平面放出型冷陰極
- Principal Investigator
  
  宮本恭幸
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  表面界面物性
- Research Institution
  Tokyo Institute of Technology
Research on Wave Phenomena of Hot Electron at the Insulator Interface and Its Application to Functional Electron Devices
- Principal Investigator
  
  ASADA Masahiro
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOKYO INSTITUTE OF TECHNOLOGY
絶縁体中に形成された金属ナノメータ微結晶のデバイス応用に関する基礎研究Principal Investigator
- Principal Investigator
  
  渡辺正裕
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology

All 2007 2006 2005 2004 2003

All Journal Article Presentation

[Journal Article] Room temperature negative differential resistance of CdF_2/CaF_2 double-barrier resonant tunneling diode structures grown on Si(100) substrates2007
- Author(s)
  T.Kanazawa, R.Fujii, T.Wada, Y.Suzuki, M.Watanabe, M.Asada
- Journal Title
  
  Applied Physics Letters Vol.90, No.9
  
  Pages: 092101-3
- Data Source
  KAKENHI-PROJECT-18206040
[Journal Article] Suppression of Leakage Current of CdF2/CaF2 Resonant Tunneling Diode Structures Grown on Si (100) Substrates by Nanoarea Local Epitaxy2007
- Author(s)
  T. Kanazawa, A. Morosawa, R. Fujii, T. Wada, Y. Suzuki, M. Watanabe, and M. Asada
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 3388-3390
- NAID
  40015421713
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206040
[Journal Article] Room temperature negative differential resistance of CdF2/CaF2 double-barrier resonant tunneling diode structures grown on Si (100) substrates2007
- Author(s)
  T. Kanazawa, R. Fujii, T. Wada, Y. Suzuki, M. Watanabe, and M. Asada
- Journal Title
  
  Applied Physics Letters 90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206040
[Journal Article] Room-Temperature Electroluminesceace from Single-Period (CdF_2/CaF_2) Inter-Subband Quantum Cascade Structure on Si Substrate2006
- Author(s)
  K.Jinen, T.Kikuchi, M.Watanabe, M.Asada
- Journal Title
  
  Japanese Journal of Applied Physics Vol.45, No.4B
  
  Pages: 3656-3658
- Data Source
  KAKENHI-PROJECT-18206040
[Journal Article] Optically pumped ultraviolet lasing of BeMgZnSe based quan-tum well laser structures2006
- Author(s)
  Y.Niiyama, T.Murata, M.Watanabe
- Journal Title
  
  Phys.Stat.Solid.(c) vol.3, no.4
  
  Pages: 878-880
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Optically pumped ultraviolet lasing of BeMgZnSe based quan-tum well laser structures2006
- Author(s)
  Y.Niiyama, T.Murata, M.Watanabe
- Journal Title
  
  Phys. Stat. Solid. (c) vol.3,No.4
  
  Pages: 878-880
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Room-Temperature Electroluminescence from a Single-Period (CdF_2/CaF_2) Inter-subband Quantum Cascade Structure on Si Substrate2006
- Author(s)
  K.Jinen, T.Kikuchi, M.Watanabe, M.Asada
- Journal Title
  
  Jpn.J.Appl.Phys. vol.45, no.4B
  
  Pages: 3656-3658
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Room-Temperature Electroluminescence from a Single-Period (CdF_2/CaF_2) Inter-subband Quantum Cascade Structure on Si Substrate2006
- Author(s)
  K.Jinen, T.Kikuchi, M.Watanabe, M.Asada
- Journal Title
  
  Jpn. J. Appl. Phys. vol.45,No.4B
  
  Pages: 3656-3658
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Optically pumped ultraviolet lasing of BeMgZnSe based quan-tum well laser structures2006
- Author(s)
  Y.Niiyama, T.Murata, M.Watanabe
- Journal Title
  
  Phys.Stat.Solid.(c) vol.3,No.4
  
  Pages: 878-880
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Room-Temperature Electroluminescence from Single-Period (CdF2/CaF2) Inter-subband Quantum Cascade Structure on Si Substrate2006
- Author(s)
  K.Jinen, T.Kikuchi, M.Watanabe, M.Asada
- Journal Title
  
  Japanese Journal of Applied Physics vol.45, no.4B
  
  Pages: 3656-3658
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206038
[Journal Article] Room-Temperature Electroluminescence from Single-Period (CdF2/CaF2) Inter-subband Quantum Cascade Structure on Si Substrate2006
- Author(s)
  K.Jinen, T.Kikuchi, M.Watanabe, M.Asada
- Journal Title
  
  Japanese Journal of Applied Physics 45・4B
  
  Pages: 3656-3658
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206038
[Journal Article] Room-Temperature Electroluminescence from a Single-Period (CdF_2/CaF_2) Inter-subband Quantum Cascade Structure on Si Substrate2006
- Author(s)
  K.Jinen, T.Kikuchi, M.Watanabe, M.Asada
- Journal Title
  
  Jpn.J.Appl.Phys. vol.45,No.4B(印刷中)
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Improvement of Crystalline Quality of BeZnSe Using Buffer Layer by Migration Enhanced Epitaxy on GaP(001) Substrate2005
- Author(s)
  T.Yokoyama, Y.Niiyama, T.Murata, M.Watanabe
- Journal Title
  
  Jpn.J.Appl.Phys. vol.44, no.2
- NAID
  10014420363
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] BeMgZnSe based ultraviolet lasers2005
- Author(s)
  Y.Niiyama, M.Watanabe
- Journal Title
  
  Semicond. Sci. Tech. vol.20
  
  Pages: 1187-1197
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Improvement of Crystalline Quality of BeZnSe Using Buffer Layer by Migration Enhanced Epitaxy on GaP(001) Substrate2005
- Author(s)
  T.Yokoyama, Y.Niiyama, T Murata, M.Watanabe
- Journal Title
  
  Jpn. J. Appl. Phys. vol.44,No.2
- NAID
  10014420363
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Structural Dependence of the Negative Differential Resistance Characteristics of CdF2/CaF2 Resonant Tunneling Diodes grown on Si using Nanoarea Local Epitaxy2005
- Author(s)
  M.Watanabe, M.Matsuda, H.Fujioka, T.Kanazawa, M.Asada
- Journal Title
  
  IEEE Transactions on Nanotechnology (in press)
- Data Source
  KAKENHI-PROJECT-15206038
[Journal Article] Improvement of Crystalline Quality of BeZnSe Using Buffer Layer by Migration Enhanced Epitaxy on GaP(001) Substrate2005
- Author(s)
  T.Yokoyama, Y.Niiyama, T.Murata, M.Watanabe
- Journal Title
  
  Jpn.J.Appl.Phys. vol.44,No.2
- NAID
  10014420363
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Ultraviolet lasing from optically pumped BeMgZnSe quantum-well laser structures2005
- Author(s)
  Y.Niiyama, T.Murata, M.Watanabe
- Journal Title
  
  Appl. Phys. Lett. vol.87,No.14
  
  Pages: 142106-142106
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Ultraviolet lasing from optically pumped BeMgZnSe quantum-well laser structures2005
- Author(s)
  Y.Niiyama, T.Murata, M.Watanabe
- Journal Title
  
  Appl.Phys.Lett. vol.87,No.14
  
  Pages: 142106-142106
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Ultraviolet lasing from optically pumped BeMgZnSe quantum-well laser structures2005
- Author(s)
  Y.Niiyama, T.Murata, M.Watanabe
- Journal Title
  
  Appl.Phys Lett. vol.87, no.14
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] BeMgZnSe based ultraviolet lasers2005
- Author(s)
  Y.Niiyama, M.Watanabe
- Journal Title
  
  Semicond.Sci.Tech. vol.20
  
  Pages: 1187-1197
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Negative Differential Resistance of CdF_2/CaF_2 Resonant Tunneling Diode Grown on Si(100) Substrate2004
- Author(s)
  M.Watanabe, T.Kanazawa, K.Jinen, M.Asada
- Journal Title
  
  2004 Silicon Nanoelectronics Workshop 9-20
  
  Pages: 145-146
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Improvement of Crystalline Quality of BeZnSe Using Buffer Layer by Migration Enhanced Epitaxy on GaP(001) Substrate2004
- Author(s)
  T.Yokoyama, Y.Niiyama, T.Murata, M.Watanabe
- Journal Title
  
  Jpn.J.Appl.Phys 44巻・2号
- NAID
  10014420363
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Epitaxial growth and optical properties for ultraviolet region of BeMgZnSe on GaP(001) substrate2004
- Author(s)
  Y.Niiyama, T.Yokoyama, M.Watanabe
- Journal Title
  
  Phys.Stat.Solid.(b) vol.241
  
  Pages: 479-482
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Epitaxial growth and optical properties for ultraviolet region of BeMgZnSe on GaP (001) Substrate2004
- Author(s)
  Y.Niiyama, T.Yokoyama, M.Watanabe
- Journal Title
  
  Phys. Stat. Solid. (b) vol.241
  
  Pages: 479-482
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Effect of Buffer Layer for Epitaxial Growth of High Magnesium Content BeMgZnSe Lattice Matched to GaP (001) Substrate2003
- Author(s)
  Y.Niiyama, T.Yokoyama, M.Watanabe
- Journal Title
  
  Jpn.J.Appl.Phys. vol.42, no.6A
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360159
[Journal Article] Effect of Buffer Layer for Epitaxial Growth of High Magnesium Content BeMgZnSe Lattice Matched to GaP (001) Substrate2003
- Author(s)
  Y.Niiyama, T.Yokoyama, M.Watanabe
- Journal Title
  
  Jpn. J. Appl. Phys. vol.42,no.6A
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360159
[Presentation] Mid-infrared (〜4μm)Electroluminescence from CdF2/CaF2 Intersubband transition structures grown on Si (111) substrate2007
- Author(s)
  H. Sano, K. Jinen, S. Kodaira, K. Uchida, M. Kumei, Y. Fujihisa, M. Watanabe, and M. Asada
- Organizer
  International Conference on Nonequilibrium Carrier Dynamics in Semiconductors
- Place of Presentation
  Tokyo
- Year and Date
  2007-07-26
- Data Source
  KAKENHI-PROJECT-18206040
[Presentation] Transmission Electron Microscopy Analysis of CaF2/CdF2/CaF2 Resonant Tunneling Diode Structures Grown on Si(100) Substrate2007
- Author(s)
  M. Watanabe, T. Kanazawa, and M. Asada
- Organizer
  International Symposium on Compound Semiconductors
- Place of Presentation
  Kyoto
- Year and Date
  2007-10-17
- Data Source
  KAKENHI-PROJECT-18206040
[Presentation] Si基板上CdF2/CaF2系サブバンド間遷移レーザに向けたナノエリア微小孔によるリーク電流低減2007
- Author(s)
  藤久雄己, 粂井正也, 梶浦俊祐, 佐々木雄佑, 渡辺正裕, 浅田雅洋
- Organizer
  応用物理学会講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-18206040

1. ASADA Masahiro (30167887)

# of Collaborated Projects: 9 results

# of Collaborated Products: 10 results
2. 宮本恭幸 (40209953)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Watanabe Masahiro 渡辺 正裕

WATANABE Masahiro 渡辺 正裕

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Fabrication of Super-Heterostructures for Advanced Optoelectronic Quantum DevicesPrincipal Investigator

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Fluoride/Oxide Super Hetero-nanostructures for Advanced Photonic DevicesPrincipal Investigator

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Fundamental study of light emitting devices on silicon substrate using nanocrystalline heterostructures formed in single crystalline insulatorPrincipal Investigator

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Fundamental study for quantum effect devices using nanocrystalline silicon formed in single crystalline insulatorPrincipal Investigator

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絶縁体中に形成されたナノ微結晶シリコンを用いた量子効果光素子の基礎研究Principal Investigator

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Watanabe Masahiro 渡辺正裕

WATANABE Masahiro 渡辺正裕