Kaizu Toshiyuki 海津利行

Researcher Number	00425571
Other IDs
Affiliation (Current)	2025: 電気通信大学, 量子未来創生デバイス開発センター, 准教授
Affiliation (based on the past Project Information) *help	2022 – 2023: 京都大学, 産官学連携本部, 特定研究員 2021: 神戸大学, 工学研究科, 助教 2016 – 2020: 神戸大学, 研究基盤センター, 助教
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Electronic materials/Electric materials
Keywords	Principal Investigator 光物性 / MBE / 窒素ドープシーケンス / 発光波長 / GaAsキャップ温度 / 発光強度向上 / InAs量子ドット / 発光強度 / 長波長発光 / キャップ成長温度 / 窒素ドープ / 量子ドット … More Except Principal Investigator … More 量子ドット超格子 / InAs量子ドット / 電気光学効果 / テラヘルツ波検知 / 電界センサ / 電界増強構造 / 光導波路構造 / 電気光学係数 / 光導電型デバイス / THｚ発生・検知 / テラヘルツ波デバイス / テラヘルツ波発生 / 電場増強構造 / 光電流特性 / 光Hall効果 / 超高速キャリア緩和 / 光伝導アンテナ（PCA） / 低温成長GaAs / 薄膜・量子構造 / 光物性 / 電子・電気材料 / 光アンプ / 量子ドット / 量子構造 / 薄膜 Less

Realization of integrated high sensitivity electric field sensor using quantum dot superlattice
- Principal Investigator
  
  和田修
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Kobe University
Photoconductive devices based on quantum dot superlattice for THz generation and detection
- Principal Investigator
  
  Wada Osamu
- Project Period (FY)
  2019 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Kobe University
Emission wavelength extension to 1.5 micrometer of InAs quantum dots grown on nitrogen-doped GaAs(001) surfacesPrincipal Investigator
- Principal Investigator
  
  Kaizu Toshiyuki
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kobe University
Development of high-gain, polarization-insensitive closely-stacked quantum dot optical amplifiers
- Principal Investigator
  
  Kita Takashi
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kobe University

All 2021 2020 2019 2018 2017 2016

All Journal Article Presentation

[Journal Article] Polarization-insensitive fiber-to-fiber gain of semiconductor optical amplifier using closely stacked InAs/GaAs quantum dots2020
- Author(s)
  Kaizu Toshiyuki、Kakutani Tomoya、Akahane Kouichi、Kita Takashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 3 Pages: 032002-032002
- DOI
  10.35848/1347-4065/ab7060
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06352
[Journal Article] Wide-wavelength-range control of photoluminescence polarization in closely stacked InAs/GaAs quantum dots2019
- Author(s)
  Kaizu Toshiyuki、Tajiri Yusuke、Kita Takashi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 125 Issue: 23 Pages: 234304-234304
- DOI
  10.1063/1.5096411
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K04532, KAKENHI-PROJECT-17K06352
[Journal Article] Spatially resolved electronic structure of an isovalent nitrogen center in GaAs2017
- Author(s)
  Plantenga R. C.、Kortan V. R.、Kaizu T.、Harada Y.、Kita T.、Flatte M. E.、Koenraad P. M.
- Journal Title
  
  Physical Review B
  
  Volume: 96 Issue: 15
- DOI
  10.1103/physrevb.96.155210
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06352, KAKENHI-PROJECT-16H04331
[Journal Article] Two-step photon up-conversion solar cells2017
- Author(s)
  Asahi Shigeo、Teranishi Haruyuki、Kusaki Kazuki、Kaizu Toshiyuki、Kita Takashi
- Journal Title
  
  Nature Communications
  
  Volume: 8 Issue: 1 Pages: 14962-14962
- DOI
  10.1038/ncomms14962
- NAID
  120006220826
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17K06352
[Journal Article] Two-step photocurrent generation enhanced by miniband formation in InAs/GaAs quantum dot superlattice intermediate-band solar cells2017
- Author(s)
  Watanabe Sho、Asahi Shigeo、Kada Tomoyuki、Hirao Kazuki、Kaizu Toshiyuki、Harada Yukihiro、Kita Takashi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 110 Issue: 19 Pages: 193104-193104
- DOI
  10.1063/1.4983288
- NAID
  120006318808
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06352
[Journal Article] Efficient two-step photocarrier generation in bias-controlled InAs/GaAs quantum dot superlattice intermediate-band solar cells2017
- Author(s)
  Kada T.、Asahi S.、Kaizu T.、Harada Y.、Tamaki R.、Okada Y.、Kita T.
- Journal Title
  
  Scientific Reports
  
  Volume: 7 Issue: 1 Pages: 5865-5865
- DOI
  10.1038/s41598-017-05494-8
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17K06352, KAKENHI-PROJECT-26246017
[Journal Article] Two-step photocurrent generation enhanced by the fundamental-state miniband formation in intermediate-band solar cells using a highly homogeneous InAs/GaAs quantum-dot superlattice2017
- Author(s)
  Hirao Kazuki、Asahi Shigeo、Kaizu Toshiyuki、Kita Takashi
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 1 Pages: 012301-012301
- DOI
  10.7567/apex.11.012301
- NAID
  210000136065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06352, KAKENHI-PROJECT-16H04331
[Journal Article] Emission-Wavelength Tuning of InAs Quantum Dots Grown on Nitrogen-d-Doped GaAs(001)2016
- Author(s)
  T. Kaizu, K. Taguchi, and T. Kita
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 119 Issue: 19 Pages: 1-8
- DOI
  10.1063/1.4951719
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04331, KAKENHI-PROJECT-15K13953
[Journal Article] Polarization Characteristics of Electroluminescence and Net Modal Gain in Highly Stacked InAs/GaAs Quantum-Dot Laser Devices2016
- Author(s)
  M. Suwa, T. Andachi, T. Kaizu, Y. Harada, and T. Kita
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 120 Issue: 13 Pages: 1-6
- DOI
  10.1063/1.4964446
- NAID
  120006318806
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04331, KAKENHI-PROJECT-15K13953
[Journal Article] Photocarrier Transport Dynamics in InAs/GaAs Quantum Dot Superlattice Solar Cells Using Time-of-Flight Spectroscopy2016
- Author(s)
  T. Tanibuchi, T. Kada, S. Asahi, D. Watanabe, T. Kaizu, Y. Harada, and T. Kita
- Journal Title
  
  Phys. Rev. B
  
  Volume: 94 Issue: 19 Pages: 1-9
- DOI
  10.1103/physrevb.94.195313
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04331, KAKENHI-PROJECT-14F04733, KAKENHI-PROJECT-15K13953
[Presentation] 光伝導アンテナ応用へ向けた多重積層InAs/GaAs量子ドットの光学特性評価2021
- Author(s)
  海津利行, 小濱一晟, 南康夫, 北田貴弘, 原田幸弘, 小島磨, 喜多隆, 和田修
- Organizer
  2021年第68回応用物理学会春季学術講演会(講演予稿集19a-Z23-3, オンライン, 2021年3月19日)
- Data Source
  KAKENHI-PROJECT-19K04532
[Presentation] 光電流マッピング法を用いた多重積層InAs/GaAs量子ドット構造光伝導アンテナの電気特性評価2021
- Author(s)
  南康夫, 中塚玲雄, 北田貴弘, 原田幸弘, 海津利行, 小島磨, 喜多隆, 和田修
- Organizer
  2021年第82回応用物理学会秋季学術講演会, 12p-N303-9, 講演予稿集, p. 12-201, オンライン
- Data Source
  KAKENHI-PROJECT-19K04532
[Presentation] 光伝導アンテナ応用へ向けた多重積層InAs/GaAs量子ドットの電気特性評価2021
- Author(s)
  南康夫, 新免歩, 北田貴弘, 原田幸弘, 海津利行, 小島磨, 喜多隆, 和田修
- Organizer
  2021年第68回応用物理学会春季学術講演会(講演予稿集 p. 12-258, オンライン, 2021年3月19日)
- Data Source
  KAKENHI-PROJECT-19K04532
[Presentation] 多重積層InAs/GaAs量子ドットを用いた光伝導アンテナの作製2020
- Author(s)
  海津利行、北田貴弘、南康夫、原田幸弘、小島磨、喜多隆、和田修
- Organizer
  第67回応用物理学会春季学術講演会(上智大学、2020. 3. 12-15)
- Data Source
  KAKENHI-PROJECT-19K04532
[Presentation] 近接積層InAs/GaAs量子ドット超格子の1次元電子状態の測定温度依存性2019
- Author(s)
  海津利行、喜多隆
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] Polarization-insensitive optical gain of highly stacked InAs/GaAsquantum dot semiconductor optical amplifier2019
- Author(s)
  T. Kaizu, T. Kakutani, T. Kita
- Organizer
  7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures ( Kobe, September 24-27, 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04532
[Presentation] 多重積層InAs/GaAs量子ドット光増幅器の偏波無依存光利得2019
- Author(s)
  海津利行、角谷智哉、喜多隆
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06352
[Presentation] Polarization-insensitive optical gain of highly stacked InAs/GaAs quantum dot semiconductor optical amplifier2019
- Author(s)
  Kaizu Toshiyuki、Kakutani Tomoya、Kita Takashi
- Organizer
  SmiconNano
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06352
[Presentation] One-dimensional electronic states in highly-stacked InAs/GaAs quantum dot superlattices2019
- Author(s)
  Kaizu Toshiyuki、Kita Takashi
- Organizer
  Compound Semiconductor Week
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06352
[Presentation] GaAsキャップ温度による窒素ドープGaAs(001)面上InAs量子ドットの発光波長への影響2018
- Author(s)
  海津利行、上西奈緒人、喜多隆
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] GaAsキャップ温度による窒素ドープGaAs(001)面上InAs量子ドットの発光波長への影響2018
- Author(s)
  海津利行，上西奈緒人，喜多隆
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06352
[Presentation] One-Dimensional Electronic States in Closely Stacked InAs/GaAs Quantum Dots with Different Growth Temperatures2018
- Author(s)
  T. Kaizu, K. Hirao, and T. Kita
- Organizer
  International Conference on Nanophotonics and Nano-optoelectronics 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] Multiple Stacking of Capping Temperature-Controlled InAs/GaAs Quantum Dots with AlGaAs Barrier Layers for Broadband Emission”2018
- Author(s)
  T. Kaizu, T. Koike, and T. Kita
- Organizer
  Compound Semiconductor Week2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] AlGaAs障壁層を挿入した波長制御InAs/GaAs量子ドットの積層成長2018
- Author(s)
  海津利行、小池孝彰、喜多隆
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] Effects of GaAs-Capping Temperature on The Emission Wavelength of InAs Quantum Dots Grown on Nitrogen-Doped GaAs(001)Surfaces2018
- Author(s)
  N. Uenishi, T. Kaizu, T. Kita
- Organizer
  20th International Conference on Molecular Beam Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] Effects of GaAs-capping Temperature on The Emission Wavelength of InAs Quantum Dots Grown on Nitrogen-doped GaAs(001) Surfaces2018
- Author(s)
  Naoto Uenishi, Toshiyuki Kaizu, and Takashi Kita
- Organizer
  The 20th International Conference on Molecular Beam Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06352
[Presentation] GaAs中のエピタキシャル窒素膜における反ストークス発光2017
- Author(s)
  小川泰弘、原田幸弘、海津利行、喜多隆
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜(神奈川県・横浜市)
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] AlGaAs障壁層を挿入した波長制御InAs/GaAs量子ドットの積層成長2017
- Author(s)
  海津利行、小池　孝彰、喜多　隆
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06352
[Presentation] InAs/GaAs量子ドット超格子中間バンド型太陽電池特性のミニバンド形成の効果2017
- Author(s)
  平尾和輝、朝日重雄、海津利行、喜多隆
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜(神奈川県・横浜市)
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] Stokes and Anti-Stokes Photoluminescence in Nitrogen δ-Doped Layer in GaAs2017
- Author(s)
  Y. Harada, Y. Ogawa, T. Kaizu, and T. Kita
- Organizer
  29th International Conference on Defects in Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] One-Dimensional Miniband Formation in InAs/GaAs Quantum Dot Superlattice2017
- Author(s)
  T. Kaizu, and T. Kita
- Organizer
  International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth -Material Research, Characterization and Imaging by In situ/Operando XAFS and X-ray Techniques-
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] Broadband control of polarization characteristics in closely-stacked InAs/GaAs quantum dots2017
- Author(s)
  Kaizu T.、Tajiri Y.、Kita. T
- Organizer
  Compound Semiconductor Week 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06352
[Presentation] 近接積層InAs/GaAs量子ドットの成長温度による電子状態の変化2017
- Author(s)
  海津利行、喜多　隆
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06352
[Presentation] Broadband Control of Polarization Characteristics in Closely-Stacked InAs/GaAs Quantum Dots2017
- Author(s)
  T. Kaizu, Y. Tajiri, and T. Kita
- Organizer
  Compound Semiconductor Week 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] One-dimensional miniband formation in InAs/GaAs Quantum Dot Superlattice2017
- Author(s)
  Kaizu T.、Kita. T
- Organizer
  International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06352
[Presentation] 近接積層InAs/GaAs量子ドットの成長温度による電子状態の変化2017
- Author(s)
  海津利行、喜多隆
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] 近接積層InAs/GaAs量子ドットのGaAsスペーサ層膜厚と成長温度による広帯域偏光特性制御（2）2017
- Author(s)
  海津利行、田尻祐介、喜多隆
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] InAs/GaAs量子ドット超格子を用いた偏波制御型半導体光増幅幅デバイスの基礎特性2017
- Author(s)
  中廣光、海津敏行、喜多隆、赤羽浩一
- Organizer
  平成29年度半導体エレクトロニクス部門委員会第1回研究会
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] Extended Optical Response of Two-Step Photoexcitation in InAs/GaAs Quantum-Dot Superlattice Intermediate Band Solar Cells2017
- Author(s)
  K. Hirao, S. Asahi, T. Kaizu, and T. Kita
- Organizer
  33rd European Photovoltaic Solar Energy Conference and Exhibition
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] Enhancement of Two-Step Photon Absorption Due to Miniband Formation in InAs/GaAs Quantum Dot Superlattice Solar Cell2016
- Author(s)
  S. Watanabe, S. Asahi, T. Kada, T. Kaizu, Y. Harada, and T. Kita
- Organizer
  32nd European Photovoltaic Solar Energy Conference and Exhibition
- Place of Presentation
  Munich（ドイツ）
- Year and Date
  2016-06-20
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] Two-Dimensional Energy Dispersion in Thermally Annealed Epitaxial Nitrogen Atomic Sheet in GaAs2016
- Author(s)
  Y. Ogawa, Y. Harada, T. Kaizu, and T. Kita
- Organizer
  2016 Compound Semiconductor Week
- Place of Presentation
  Toyama International Conference Center（富山県・富山市）
- Year and Date
  2016-06-26
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] Control In-Ga Intermixing in InAs Quantum Dot on Nitrogen d-Doped GaAs2016
- Author(s)
  T. Kaizu, and T. Kita
- Organizer
  19th International Conference on Molecular-Beam Epitaxy
- Place of Presentation
  Montpellier（フランス）
- Year and Date
  2016-09-04
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] Dot-in-Well中間バンド型太陽電池における長い電子寿命の観測2016
- Author(s)
  寺西陽之、朝日重雄、海津利行、喜多隆
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] GaAs中のデルタドーピング窒化層を利用した光によるフォノン制御2016
- Author(s)
  小川泰弘、原田幸弘、海津利行、喜多隆
- Organizer
  第27回光物性研究会(2016)
- Place of Presentation
  神戸大学（兵庫県・神戸市）
- Year and Date
  2016-12-02
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] 近接積層InAs/GaAs量子ドットのGaAsスペーサ層膜厚と成長温度による広帯域偏光特性制御2016
- Author(s)
  海津利行、田尻祐介、喜多隆
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] Spatial Electronic Structure of an Isovalent Nitrogen Center in GaAs2016
- Author(s)
  R. Plantenga, V. Kortan, T. Kaizu, Y. Harada, T. Kita, M. Flatte, and P. Koenraad
- Organizer
  33rd International Conference on the Physics of Semiconductors
- Place of Presentation
  Beijing（中華人民共和国）
- Year and Date
  2016-07-31
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] Thermal Carrier-Escape Process from the Intermediate Band in InAs/GaAs Quantum Dot Solar Cells2016
- Author(s)
  K. Hirao, S. Asahi, S. Watanabe, T. Kaizu, Y. Harada, and T. Kita
- Organizer
  第35回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖（滋賀県・守山市）
- Year and Date
  2016-07-06
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] ヘテロ界面を利用した光アップコンバージョン太陽電池の2段階光吸収による大幅な電流増加2016
- Author(s)
  朝日重雄、寺西陽之、海津利行、喜多隆
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H04331
[Presentation] GaAs First-Spacer-Layer Thickness Dependence of Polarized Photoluminescence Properties of Closely-Stacked InAs/GaAs Quantum Dots with Long-Wavelength Emission2016
- Author(s)
  Y. Tajiri, T. Kaizu, and T. Kita
- Organizer
  2016 Compound Semiconductor Week
- Place of Presentation
  Toyama International Conference Center（富山県・富山市）
- Year and Date
  2016-06-26
- Data Source
  KAKENHI-PROJECT-16H04331

1. 原田幸弘 (10554355)

# of Collaborated Projects: 3 results

# of Collaborated Products: 13 results
2. Wada Osamu (90335422)

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
3. 小島磨 (00415845)

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
4. 南康夫 (60578368)

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
5. Kita Takashi (10221186)

# of Collaborated Projects: 1 results

# of Collaborated Products: 28 results
6. 北田貴弘 (90283738)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
7. AKAHANE koichi

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results

Kaizu Toshiyuki 海津 利行

Research Projects

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Co-Researchers

Realization of integrated high sensitivity electric field sensor using quantum dot superlattice

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Photoconductive devices based on quantum dot superlattice for THz generation and detection

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Emission wavelength extension to 1.5 micrometer of InAs quantum dots grown on nitrogen-doped GaAs(001) surfacesPrincipal Investigator

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Development of high-gain, polarization-insensitive closely-stacked quantum dot optical amplifiers

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[Journal Article] Polarization-insensitive fiber-to-fiber gain of semiconductor optical amplifier using closely stacked InAs/GaAs quantum dots2020

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[Journal Article] Wide-wavelength-range control of photoluminescence polarization in closely stacked InAs/GaAs quantum dots2019

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[Journal Article] Spatially resolved electronic structure of an isovalent nitrogen center in GaAs2017

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[Journal Article] Two-step photon up-conversion solar cells2017

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DOI

NAID

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[Journal Article] Two-step photocurrent generation enhanced by miniband formation in InAs/GaAs quantum dot superlattice intermediate-band solar cells2017

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[Journal Article] Efficient two-step photocarrier generation in bias-controlled InAs/GaAs quantum dot superlattice intermediate-band solar cells2017

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[Journal Article] Two-step photocurrent generation enhanced by the fundamental-state miniband formation in intermediate-band solar cells using a highly homogeneous InAs/GaAs quantum-dot superlattice2017

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NAID

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[Journal Article] Emission-Wavelength Tuning of InAs Quantum Dots Grown on Nitrogen-d-Doped GaAs(001)2016

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[Journal Article] Polarization Characteristics of Electroluminescence and Net Modal Gain in Highly Stacked InAs/GaAs Quantum-Dot Laser Devices2016

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NAID

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[Journal Article] Photocarrier Transport Dynamics in InAs/GaAs Quantum Dot Superlattice Solar Cells Using Time-of-Flight Spectroscopy2016

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Kaizu Toshiyuki 海津利行

[Presentation] GaAsキャップ温度による窒素ドープGaAs(001)面上InAs量子ドットの発光波長への影響2018