KAWAZU Takuya 川津琢也

… Alternative Names

川津琢也カワヅタクヤ

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Researcher Number	00444076
Other IDs	https://orcid.org/0000-0001-8081-4167
Affiliation (Current)	2026: 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主任研究員
Affiliation (based on the past Project Information) *help	2024: 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主任研究員 2018 – 2019: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主任研究員 2016 – 2017: 国立研究開発法人物質・材料研究機構, 機能性材料拠点, 主任研究員 2015 – 2016: 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主任研究員 2015: 国立研究開発法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主任研究員 … More 2014: 独立行政法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主任研究員 2013: 独立行政法人物質・材料研究機構, 先端的共通技術部門先端フォトニクス材料ユニット量子ナノ構造グループ, 主任研究員 2010: 独立行政法人物質・材料研究機構, 量子ドットセンター, 主任研究員 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Electron device/Electronic equipment / Basic Section 30010:Crystal engineering-related / Nano/Microsystems
Keywords	Principal Investigator 量子ドット / 赤外材料・素子 / 量子構造 / 電子デバイス / 電界効果トランジスター / 光起電流 / 半導体 / 高指数面基板 / アルミニウムアンチモン / ガリウムアンチモン … More / 2次元電子 / ショットキバリア光検出器 / n-AlGaAs/GaAsヘテロ接合 / 電界効果トランジスタ … More Except Principal Investigator 赤外検出器 / GaAs / 分子線エピタキシー / 光検出器 / 量子ドット / 転位 / 結晶成長 / 赤外線センサー / 断面SPM / InAs / 中赤外光 / 量子井戸 / メタ表面 / メタマテリアル / マイクロ・ナノデバイス / 光通信波長 / GaSb / 光検出 / 単一光子検出 / 量子ロッド / 三角障壁 / 光伝導 / 1次元電子 / 量子細線 / 量子ナノ構造 / スピンデバイス / 量子デバイス Less

Fabrication of new infrared photodetectors by using defects at lattice-mismatched interface
- Principal Investigator
  
  間野高明
- Project Period (FY)
  2024 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  National Institute for Materials Science
Optical AND operation in semiconductor quantum structurePrincipal Investigator
- Principal Investigator
  
  KAWAZU Takuya
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute for Materials Science
Development of less-toxic mid-infrared photodetectors by merging quantum wells and metasurfaces
- Principal Investigator
  
  Miyazaki Hideki
- Project Period (FY)
  2015 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Nano/Microsystems
- Research Institution
  National Institute for Materials Science
Photogalvanic effects in semiconductor quantum structurePrincipal Investigator
- Principal Investigator
  
  Kawazu Takuya
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute for Materials Science
Electron transport in triangular-barriers with buried type-II quantum dots and their photodetector applications
- Principal Investigator
  
  SAKAKI Hiroyuki
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Toyota Technological Institute
New ways of forming combined quantum wire/dot structures and investigation of their photoconductive functions
- Principal Investigator
  
  SAKAKI Hiroyuki
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Toyota Technological Institute

All 2024 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 Other

All Journal Article Presentation

[Journal Article] Arsenic-flux dependence of surface morphology in InAs homoepitaxy2024
- Author(s)
  Ohtake Akihiro、Kawazu Takuya、Mano Takaaki
- Journal Title
  
  Journal of Vacuum Science ＆ Technology A
  
  Volume: 42 Issue: 6 Pages: 062702-062702
- DOI
  10.1116/6.0003957
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24K01367, KAKENHI-PROJECT-23K04592
[Journal Article] Valence band mixing in GaAs/AlGaAs quantum wells adjacent to self-assembled InAlAs antidots2019
- Author(s)
  Takuya Kawazu
- Journal Title
  
  Journal of Nanomaterials
  
  Volume: 2019 Pages: 1-7
- DOI
  10.1155/2019/5349291
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17K06364
[Journal Article] Temperature dependence of Schottky photocurrent for local gate edge illumination in n-AlGaAs/GaAs/AlGaAs double-heterojunction field-effect transistor2019
- Author(s)
  Kawazu Takuya、Noda Takeshi、Sakuma Yoshiki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SI Pages: SIIB05-SIIB05
- DOI
  10.7567/1347-4065/ab0c76
- NAID
  210000156351
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06364
[Journal Article] Optical AND operation in n-AlGaAs/GaAs heterojunction field effect transistor2018
- Author(s)
  Takuya Kawazu, Takeshi Noda, and Yoshiki Sakuma
- Journal Title
  
  Applied Physics Letters
  
  Volume: 112 Issue: 7
- DOI
  10.1063/1.5010845
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06364
[Journal Article] Optical anisotropy of InGaAs quantum dot arrays aligned along multiatomic steps on vicinal GaAs(111)B2017
- Author(s)
  Kawazu Takuya
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 122 Issue: 20
- DOI
  10.1063/1.4996058
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06364
[Journal Article] Photoinduced current in n-AlGaAs/GaAs heterojunction field-effect transistor driven by local illumination in edge regions of Schottky metal gate2017
- Author(s)
  T. Kawazu, T. Noda, and Y. Sakuma
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 4S Pages: 04CG04-04CG04
- DOI
  10.7567/jjap.56.04cg04
- NAID
  210000147611
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26420288
[Journal Article] Effects of Ga deposition rate and Sb flux on morphology of GaSb quantum dots formed on GaAs2017
- Author(s)
  T. Kawazu, T. Noda, Y. Sakuma, and H. Sakaki
- Journal Title
  
  Physica Status Solidi (c)
  
  Volume: 14 Issue: 1-2
- DOI
  10.1002/pssc.201600109
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26420288
[Journal Article] Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy2016
- Author(s)
  T. Kawazu, T. Noda, Y. Sakuma and H. Sakaki
- Journal Title
  
  AIP Advances
  
  Volume: 6 Issue: 4
- DOI
  10.1063/1.4947464
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26289095, KAKENHI-PROJECT-26420288
[Journal Article] Optical anisotropy of InGaAs quantum wire arrays on vicinal (111)B GaAs2016
- Author(s)
  T. Kawazu
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 120 Issue: 13
- DOI
  10.1063/1.4964338
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26420288
[Journal Article] Growth and optical properties of GaSb/GaAs type-II quantum dots with and without wetting layer2015
- Author(s)
  T. Kawazu, T. Noda, T. Mano, Y. Sakuma, and H. Sakaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54 Issue: 4S Pages: 04DH01-04DH01
- DOI
  10.7567/jjap.54.04dh01
- NAID
  210000145025
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289091, KAKENHI-PROJECT-26289095, KAKENHI-PROJECT-26420288
[Journal Article] Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination2015
- Author(s)
  T. Kawazu, T. Noda, Y. Sakuma, and H. Sakaki
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 106 Issue: 2
- DOI
  10.1063/1.4905661
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289091, KAKENHI-PROJECT-26289095, KAKENHI-PROJECT-26420288
[Journal Article] GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications2014
- Author(s)
  T. Noda, L. M. Otto, M. Elborg, M. Jo, T. Mano, T. Kawazu, L. Han, H. Sakaki
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 104 Issue: 12
- DOI
  10.1063/1.4869148
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360164
[Journal Article] Growth of GaSb quantum dots on GaAs (311)A2013
- Author(s)
  T. Kawazu, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 378 Pages: 475-479
- DOI
  10.1016/j.jcrysgro.2012.11.020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360164, KAKENHI-PROJECT-25289091
[Journal Article] Photo-induced current in n-AlGaAs/ GaAs heterojunction channels driven by local illumination at the edge regions of Hall bar2013
- Author(s)
  T. Kawazu, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 102, 25 Issue: 25 Pages: 252104-252104
- DOI
  10.1063/1.4812293
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360164, KAKENHI-PROJECT-25289091
[Journal Article] Fabrication of InAs nanoscale rings by droplet epitaxy2013
- Author(s)
  T. Noda, M. Jo, T. Mano, T. Kawazu, H. Sakaki
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 378 Pages: 529-531
- DOI
  10.1016/j.jcrysgro.2012.11.036
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360164
[Journal Article] Current-voltage characteristics of GaAs/AlGaAs coupled multiple quantum well solar cells2012
- Author(s)
  Y. Ding, T. Noda, T. Mano, M. Jo, T. Kawazu, L. Han, H. Sakaki
- Journal Title
  
  Jpn.J. Appl. Phys
  
  Volume: 51, 10 Issue: 10S Pages: 10ND08-10ND08
- DOI
  10.1143/jjap.51.10nd08
- NAID
  210000141492
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360164
[Journal Article] Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy2012
- Author(s)
  T. Noda, T. Mano, M. Jo, T. Kawazu, H. Sakaki
- Journal Title
  
  J. Appl. Phys
  
  Volume: 112, 6 Issue: 6
- DOI
  10.1063/1.4752255
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360164
[Journal Article] Anomalous capacitance-voltage characteristics of GaAs/AlGaAs multiple quantum well solar cells2012
- Author(s)
  T. Noda, T. Mano, M. Jo, Y. Ding, T. Kawazu, H. Sakaki
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 51, 10 Issue: 10S Pages: 10ND07-10ND07
- DOI
  10.1143/jjap.51.10nd07
- NAID
  210000141491
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360164
[Journal Article] Effects of Sb/As Interdiffusion on Optical Anisotropy of GaSb Quantum Dots in GaAs Grown by Droplet Epitaxy2012
- Author(s)
  T. Kawazu et al.
- Journal Title
  
  JAPANESE JOURNAL OF APPLIED PHYSICS
  
  Volume: 51 Issue: 11R Pages: 115201-115201
- DOI
  10.1143/jjap.51.115201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360133, KAKENHI-PROJECT-23360164
[Journal Article] Optical Anisotropy of GaSb Type-II Nanorods on Vicinal (111)B GaAs2011
- Author(s)
  T.Kawazu, et al
- Journal Title
  
  Applied Physics Letters
  
  Volume: 99 Issue: 23
- DOI
  10.1063/1.3665394
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360133, KAKENHI-PROJECT-23360164
[Journal Article] Effects of interface grading on electronic states and optical transitions in GaSb type-II quantum dots in GaAs2011
- Author(s)
  T. Kawazu, H. Sakaki
- Journal Title
  
  Japanese J. Appl. Phys
  
  Volume: 50 Issue: 4S Pages: 04DJ06-04DJ06
- DOI
  10.1143/jjap.50.04dj06
- NAID
  210000070360
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360164
[Journal Article] Self-assembled growth of GaSb type- II nanorods aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs2011
- Author(s)
  T. Kawazu, Y. Akiyama, H. Sakaki
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 335, 1 Issue: 1 Pages: 1-3
- DOI
  10.1016/j.jcrysgro.2011.09.016
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360164
[Journal Article] Temperature dependence of magnetocapacitance in n-AlGaAs/GaAs selectively doped heterojunction with InGaAs quantum dots2010
- Author(s)
  T.Kawazu
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- NAID
  40017294699
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal (111)B GaAs2010
- Author(s)
  Y.Akiyama, T.Kawazu, T.Noda, H.Sakaki
- Journal Title
  
  AIP Conf.Proc Vol.1199
  
  Pages: 265-266
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxy2010
- Author(s)
  T.Kawazu
- Journal Title
  
  Physica E-Low-Dimensional Systems & Nano-structures
  
  Volume: 42 Pages: 2742-2744
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Effects of Sb/As intermixing on optical properties of GaSb type-II quantum dots in GaAs grown by droplet epitaxy2010
- Author(s)
  T.Kawazu
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 97
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Temperature dependence of magneto-capacitance in n-AlGaAs/GaAs selectively doped heterojunction with InGaAs quantum dots2010
- Author(s)
  T.Kawazu, H.Sakaki
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.49, 9
  
  Pages: 90205-90205
- NAID
  40017294699
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Effects of antimony flux on morphology and photo-luminescence spectra of GaSb quantum dots formed on GaAs by droplet epitaxy2010
- Author(s)
  T.Kawazu
- Journal Title
  
  J.Nonlinear Optical Physics & Material
  
  Volume: 19 Pages: 819-826
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Two different growth modes of GaSb dots on GaAs(100)by droplet epitaxy2009
- Author(s)
  T.Kawazu
- Journal Title
  
  J.Crystal Growth 311
  
  Pages: 2255-2257
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Growth of GaSb dots on GaAs (100) by droplet epitaxy2009
- Author(s)
  Takuya Kawazu
- Journal Title
  
  Physica status Solidi (b)246, No. 4
  
  Pages: 733-735
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Optical properties of GaSb/GaAs type-II quantum dots grown by droplet epitaxy2009
- Author(s)
  Takuya Kawazu
- Journal Title
  
  Applied Physics Letters 94
  
  Pages: 81911-81911
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Formation of ultra-low density (≦104 cm-2) self-organized InAs quantum dots on GaAs by a modified molecular beam epitaxy method2008
- Author(s)
  M.Ohmori, T.Kawazu, K.Torii, T.Takahashi, H.Sakaki
- Journal Title
  
  Appl.Phys.Exp. Vol.1
- NAID
  10025080675
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Electron scatterings, in selectively doped n-AlGaAs/GaAsheterojunctions with high density self-assembled InAlAs antidots2008
- Author(s)
  Takuya Kawazu
- Journal Title
  
  Applied Physics Letters Vol. 93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Electron scatterings in selectively doped n-AlGaAs/GaAs heterojunctions with high density self-assembled InAlAs antidots2008
- Author(s)
  T.Kawazu, H.Sakaki
- Journal Title
  
  Appl.Phys.Lett. Vol.93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Magneto-capacitance study of an n-AlGaAs/GaAs heterojunction supporting a sizable dc current2008
- Author(s)
  T.Kawazu, H.Sakaki
- Journal Title
  
  Physica Status Solidi, (c) 5 No.9
  
  Pages: 2879-2881
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Magnetocapacitance measurement of selectively doped n-AlGaAs/GaAs heterojunction with InGaAs quantum dots2008
- Author(s)
  T.Kawazu, H.Sakaki
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.47, (5), pt.1
  
  Pages: 3763-3765
- NAID
  10022549917
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Magnetocapacitance measurement of selectively doped n-AlGaAs/GaAs heterojunction with InGaAs quantum dots2008
- Author(s)
  Takuya Kawazu
- Journal Title
  
  Japanese Journal of Applied Physics Part 1, Vol. 47, (5), pt. 1
  
  Pages: 3763-3765
- NAID
  10022549917
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Journal Article] Magneto-capacitance study of an n-AlGaAs/GaAs heterojunction supporting a sizable dc current2008
- Author(s)
  Takuya Kawazu
- Journal Title
  
  Physica Status Solidi (c) 5, No. 9
  
  Pages: 2879-2881
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] Metamaterial quantum well infrared photodetectors based on plasmon-enhanced intersubband transition2019
- Author(s)
  H. T. Miyazaki, T. Mano, T. Kasaya, H. Oosato, K. Watanabe, Y. Sugimoto, T. Kawazu, T. Ochiai, Y. Arai, and A. Shigetou
- Organizer
  the 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02011
[Presentation] Enhancement of Infrared Photo-responses of the Schottky Gate Region of an n-AlGaAs/GaAs Heterojunction FET by a Second Light Illumination2019
- Author(s)
  Kawazu Takuya、Noda Takeshi、Sakuma Yoshiki
- Organizer
  The 46th International Symposium on Compound Semiconductors (ISCS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06364
[Presentation] 局所光照射によるn-AlGaAs/GaAsヘテロ接合電界効果トランジスタのショットキー光電流増強効果2019
- Author(s)
  川津琢也，野田武司, 佐久間芳樹
- Organizer
  第66回応用物理学春季学術講演会(2019年春季)
- Data Source
  KAKENHI-PROJECT-17K06364
[Presentation] n-AlGaAs/GaAsヘテロ接合電界効果トランジスタにおける光AND演算動作2018
- Author(s)
  川津琢也，野田武司, 佐久間芳樹
- Organizer
  第65回応用物理学(2018年春季)
- Data Source
  KAKENHI-PROJECT-17K06364
[Presentation] 微傾斜GaAs(111)B 基板上に作製したInGaAs量子細線列の光学異方性2018
- Author(s)
  川津琢也、野田武司、佐久間芳樹
- Organizer
  第79回応用物理学会秋季学術講演会(2018年春季)
- Data Source
  KAKENHI-PROJECT-17K06364
[Presentation] メタ表面量子井戸赤外線検出器2018
- Author(s)
  宮崎英樹, 間野高明, 笠谷岳士, 大里啓孝, 渡邉一弘, 杉本喜正, 川津琢也, 新井志大, 重藤暁津
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H02011
[Presentation] Temperature Dependence of Schottky Photocurrent for Local Gate Edge Illumination in n-AlGaAs/GaAs/AlGaAs Double-Heterojunction Field-Effect Transistor2018
- Author(s)
  Takuya Kawazu, Takeshi Noda, and Yoshiki Sakuma
- Organizer
  14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06364
[Presentation] n-AlGaAs/GaAsヘテロ接合電界効果トランジスタのショットキーゲート端照射による光電流生成2017
- Author(s)
  川津琢也，野田武司, 佐久間芳樹
- Organizer
  第78回応用物理学(2017年春季)
- Data Source
  KAKENHI-PROJECT-17K06364
[Presentation] Ga堆積速度およびSb分子線圧のGaSb量子ドット形成への影響2016
- Author(s)
  川津琢也、野田武司、佐久間芳樹
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-26420288
[Presentation] Photoinduced current in n-AlGaAs/GaAs heterojunction field-effect transistor driven by local illumination in edge regions of Schottky metal gate2016
- Author(s)
  T. Kawazu, T. Noda, and Y. Sakuma
- Organizer
  2016 International Conference on Sｏｌｉｄ Sｔａｔｅ Dｅｖｉｃｅｓａｎｄ　Mａｔｅｒｉａｌｓ (SSDM2016)
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420288
[Presentation] Effects of Ga deposition rate and antimony flux on morphology of GaSb quantum dots formed on GaAs2016
- Author(s)
  Takuya Kawazu, Takeshi Noda, Yoshiki Sakuma, and Hiroyuki Sakaki
- Organizer
  The 43rd International Symposium on Compound Semiconductor
- Place of Presentation
  Toyama International Conference Center
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420288
[Presentation] 微傾斜GaAs(111)B基板上に作製したGaSbタイプIIナノロッドの光学異方性2016
- Author(s)
  川津琢也、野田武司、佐久間芳樹、榊裕之
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東工大　大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26420288
[Presentation] ショットキバリアゲート光照射によるn-AlGaAs/GaAs(001) ヘテロ接合チャネルの面内電流生成2015
- Author(s)
  川津琢也、野田武司、佐久間芳樹、榊裕之
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26420288
[Presentation] GaSb/GaAs量子ドットの光学異方性における後熱処理の効果2015
- Author(s)
  川津琢也，野田武司，佐久間芳樹，榊　裕之
- Organizer
  第62回応用物理学会（2015年春季)
- Place of Presentation
  東海大学
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-26420288
[Presentation] 高指数面GaAs基板上のGaSbおよびAlSb量子ドットの成長2014
- Author(s)
  川津琢也，野田武司，間野高明，佐久間芳樹，榊　裕之
- Organizer
  第75回応用物理学会（2014年秋季)
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-26420288
[Presentation] Growth of GaSb quantum dots on GaAs (111)A2013
- Author(s)
  T. Kawazu, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
- Organizer
  12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures in conjunction with 21st International Colloquium on Scanning Probe Microscopy(ACSIN-12 & ICSPM21)
- Place of Presentation
  Tsukuba International Congress Center, Tsukuba, Japan
- Year and Date
  2013-11-07
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] Post-growth anealing of GaSb quantum dots in GaAs formed by droplet epitaxy2013
- Author(s)
  T. Kawazu, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
- Organizer
  The 40th International Symposium on Compound Semiconductors
- Place of Presentation
  Kobe Convention Center, Kobe, Japan
- Year and Date
  2013-05-20
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] 液滴エピタキシーで形成したInAs リングの光学特性2012
- Author(s)
  野田武司, 間野高明, 定昌史, 川津琢也, 丁毅, 榊裕之
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] Fabrication of InAs nanoscale rings by droplet epitaxy and their optical properties2012
- Author(s)
  T. Noda, M. Jo, T. Mano, T. Kawazu, H. Sakaki
- Organizer
  The 17th International Conference on Molecular Beam Epitaxy (MBE2012)
- Place of Presentation
  Nara, Japan
- Year and Date
  2012-09-25
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] 微傾斜GaAs(111)B 基板上のGaSb タイプII ナノロッドの自己形成2012
- Author(s)
  川津琢也, 秋山芳広, 野田武司, 間野高明, 佐久間芳樹, 榊裕之
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] GaAs(311)A 基板上のGaSb ドットの成長2012
- Author(s)
  川津琢也, 野田武司, 間野高明, 佐久間芳樹, 榊裕之
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] Growth of GaSb quantum dots on GaAs (311)A2012
- Author(s)
  T. Kawazu, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
- Organizer
  The 17th International Conference on Molecular Beam Epitaxy (MBE2012)
- Place of Presentation
  Nara, Japan
- Year and Date
  2012-09-25
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] 液滴エピタキシー法によるGaSb/GaAs 量子ドットの後熱処理効果2011
- Author(s)
  川津琢也, 野田武司, 間野高明, 佐久間芳樹, 榊裕之
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] Effects of antimony flux on morphology and photoluminescence spectra of GaSb quantum dots formed on GaAs by droplet epitaxy2010
- Author(s)
  T.Kawazu
- Organizer
  The International Conference on Nanophotonics 2010
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2010-05-30
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] GaSb/GaAsタイプII量子ドットにおけるSb/As相互拡散の効果2010
- Author(s)
  川津琢也
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] Effects of interface grading on electronic states and optical transitions in GaSb type-II quantum dots in GaAs2010
- Author(s)
  T.Kawazu
- Organizer
  2010 International Conference on SOLID STATE DEVICES AND MATERIALS (SSDM 2010)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] 自己形成InGaAsドット列における異方的な持続性光電流2010
- Author(s)
  秋山芳広、川津琢也, 野田武司, 榊裕之
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] Growth of GaSb and InSb Quantum dots on GaAs(311)A by droplet epitaxy2010
- Author(s)
  T.Kawazu
- Organizer
  The 37th International Symposium on Compound Semiconductors
- Place of Presentation
  Takamatsu, Japan
- Year and Date
  2010-05-31
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] Effects of interface grading on electronic states and optical transitions in GaSb type-II quantum dots in GaAs2010
- Author(s)
  川津琢也, 榊裕之
- Organizer
  2010 International Conference on SOLID STATE DEVICES AND MATERIALS (SSDM2010)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] 液滴エピタキシー法によるGaSb/GaAs量子ドットの熱アニーリング効果2009
- Author(s)
  川津琢也
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] 微傾斜(111)B面上のInGaAs結合ドット列を介する異方的電子伝導の温度依存性2009
- Author(s)
  秋山芳広, 川津琢也, 野田武司, 榊裕之
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxy2009
- Author(s)
  T.Kawazu
- Organizer
  The 14<th> International Conf. on Modulated Semiconductor Structures(MSS14)
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] 液滴エピタキシー法によるGaSb/GaAs タイプII量子ドットの光学特性2008
- Author(s)
  川津琢也
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] Anisotropic transport of electrons in a novel FET channel with chains of InGaAs nano-islands embedded along quasi-periodic multi-atomic steps on vicinal (111)B GaAs2008
- Author(s)
  秋山芳広, 川津琢也, 野田武司, 榊裕之
- Organizer
  29th International Conference on the Physics of Semiconductors
- Place of Presentation
  Rio de Janeiro, Brazil
- Year and Date
  2008-07-29
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] Optical properties of GaSb/GaAs type-II dots by droplet epitaxy2008
- Author(s)
  Takuya Kawazu
- Organizer
  2008 International Conference on SOLID STATE DEVICES AND MATERIALS (SSDM2008)
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PROJECT-20360163
[Presentation] 結合量子ドット太陽電池における電荷蓄積
- Author(s)
  野田武司、定昌史、間野高明、川津琢也、榊裕之
- Organizer
  2012年秋季　第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] 試料端局所照射によるn-AlGaAs/GaAsヘテロ接合チャネルの光電流
- Author(s)
  川津琢也，野田武司，間野高明，佐久間芳樹，榊　裕之
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] Evidence of charge accumulation in GaAs/AlGaAs coupled quantum well solar cells
- Author(s)
  T. Noda, M. Jo, T. Mano, T. Kawazu, H. Sakaki
- Organizer
  Photovoltaic Science and Engineering Conference
- Place of Presentation
  Hangzhou, China
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] Interface roughness scattering at AlGaN/GaN heterojunctions
- Author(s)
  R. Niwa, Y. Akiyama, H. Murayama, H. Sakashita, T. Kawazu,T. Kachi, M. Sugimoto, H. Sakaki
- Organizer
  International Workshop on Nitride Semiconductors 2012（IWN2012）
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] 液滴エピタキシーで形成したInAsリングの光学特性
- Author(s)
  野田武司、間野高明、定昌史、川津琢也、丁　　毅、榊裕之
- Organizer
  2012年春季　第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] 量子井戸太陽電池を用いた二段階光吸収によるフォトカレント生成
- Author(s)
  野田武司，間野高明，Martin Elborg，川津琢也，Liyuan Han，榊裕之
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] Post-growth anealing of GaSb quantum dots in GaAs formed by droplet epitaxy
- Author(s)
  T. Kawazu, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
- Organizer
  The 40th International Symposium on Compound Semiconductors
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] GaAs/AlGaAs多重量子井戸太陽電池のCV特性
- Author(s)
  野田武司、間野高明、定昌史、川津琢也、丁　　毅、韓礼元、榊裕之
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] GaAs(311)A基板上のGaSbドットの成長
- Author(s)
  川津琢也、野田武司、間野高明、佐久間芳樹、榊裕之
- Organizer
  2012年秋季　第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] 液滴エピタキシー法によるGaSb/GaAs量子ドットの後熱処理効果
- Author(s)
  川津琢也、野田武司、間野高明、佐久間芳樹、榊裕之
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] Anomalous capacitance-voltage characteristics of GaAs/AlGaAs multiple quantum well solar cells
- Author(s)
  T. Noda, T. Mano, M. Jo, Y. Ding, T. Kawazu, H. Sakaki
- Organizer
  21st International Photovoltaic Science and Engineering Conference
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] Current-voltage characteristics and their wavelength dependences of GaAs/AlGaAs coupled quantum well solar cells
- Author(s)
  T. Noda, Y. Ding, M. Jo, T. Mano, T. Kawazu, L. Han, H. Sakaki
- Organizer
  1st International Conference on Emerging Advanced Nanomaterials (ICEAN)
- Place of Presentation
  Brisbane, Australia
- Invited
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] 微傾斜GaAs(111)B基板上のGaSbタイプIIナノロッドの自己形成
- Author(s)
  川津琢也、秋山芳広、野田武司、間野高明、佐久間芳樹、榊裕之
- Organizer
  2012年春季　第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] AlGaN/GaN HEMTにおける界面凹凸散乱
- Author(s)
  丹羽亮介、秋山芳広、村山裕明、坂下大樹、川津琢也、加地徹、杉本雅裕、榊裕之
- Organizer
  2012年秋季　第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] InP(111)A基板上のInAsドットの液滴エピタキシー
- Author(s)
  野田武司，間野高明，川津琢也，榊　裕之
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] Growth of GaSb quantum dots on GaAs (111)A
- Author(s)
  T. Kawazu, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
- Organizer
  ACSIN-12 & ICSPM21
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-23360164
[Presentation] Photocurrent studies of GaAs/AlGaAs coupled quantum well solar cells
- Author(s)
  T. Noda, M. Jo, T. Mano, T. Kawazu, H. Sakaki
- Organizer
  EP2DS-20 & MSS-16 (20th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-20) and 16th International Conference on Modulated Semiconductor Structures(MSS-16)
- Place of Presentation
  Wroclaw, Poland
- Data Source
  KAKENHI-PROJECT-23360164

1. OHMORI Masato (70454444)

# of Collaborated Projects: 3 results

# of Collaborated Products: 1 results
2. AKIYAMA Yoshihiro (60469773)

# of Collaborated Projects: 3 results

# of Collaborated Products: 9 results
3. VITUSHINSKIY Pavel (30545330)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. SAKAKI Hiroyuki (90013226)

# of Collaborated Projects: 2 results

# of Collaborated Products: 45 results
5. NODA Takeshi (90251462)

# of Collaborated Projects: 2 results

# of Collaborated Products: 34 results
6. Miyazaki Hideki (10262114)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
7. 間野高明 (60391215)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
8. 石田暢之 (10451444)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 大竹晃浩 (30267398)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
10. KASAYA Takeshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
11. SAKUMA Yoshiki

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

KAWAZU Takuya 川津 琢也

川津 琢也 カワヅ タクヤ

Research Projects

Research Products

Co-Researchers

Fabrication of new infrared photodetectors by using defects at lattice-mismatched interface

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Optical AND operation in semiconductor quantum structurePrincipal Investigator

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Development of less-toxic mid-infrared photodetectors by merging quantum wells and metasurfaces

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Photogalvanic effects in semiconductor quantum structurePrincipal Investigator

Principal Investigator

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Electron transport in triangular-barriers with buried type-II quantum dots and their photodetector applications

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New ways of forming combined quantum wire/dot structures and investigation of their photoconductive functions

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[Journal Article] Arsenic-flux dependence of surface morphology in InAs homoepitaxy2024

Author(s)

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DOI

Data Source

[Journal Article] Valence band mixing in GaAs/AlGaAs quantum wells adjacent to self-assembled InAlAs antidots2019

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DOI

Data Source

[Journal Article] Temperature dependence of Schottky photocurrent for local gate edge illumination in n-AlGaAs/GaAs/AlGaAs double-heterojunction field-effect transistor2019

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DOI

NAID

Data Source

[Journal Article] Optical AND operation in n-AlGaAs/GaAs heterojunction field effect transistor2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Optical anisotropy of InGaAs quantum dot arrays aligned along multiatomic steps on vicinal GaAs(111)B2017

Author(s)

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DOI

Data Source

[Journal Article] Photoinduced current in n-AlGaAs/GaAs heterojunction field-effect transistor driven by local illumination in edge regions of Schottky metal gate2017

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DOI

NAID

Data Source

[Journal Article] Effects of Ga deposition rate and Sb flux on morphology of GaSb quantum dots formed on GaAs2017

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Journal Title

DOI

Data Source

[Journal Article] Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy2016

Author(s)

KAWAZU Takuya 川津琢也

川津琢也カワヅタクヤ