KAKIUCHI Takuhiro 垣内拓大

… Alternative Names

垣内拓大カキウチタクヒロ

Kakiuchi Takuhiro 垣内拓大

Less

Researcher Number	00508757
Other IDs
Affiliation (Current)	2025: 愛媛大学, 理工学研究科(理学系), 准教授
Affiliation (based on the past Project Information) *help	2023: 愛媛大学, 理工学研究科(理学系), 准教授 2022: 愛媛大学, 理工学研究科(理学系), 講師(特任准教授) 2021: 愛媛大学, 理工学研究科(理学系), 講師 2017 – 2019: 愛媛大学, 理工学研究科(理学系), 講師 2015: 愛媛大学, 理工学研究科, 講師 … More 2014: 愛媛大学, 大学院理工学研究科, 助教 2011 – 2014: 愛媛大学, 理工学研究科, 助教 2012: 愛媛大学, 大学院・理工学研究科, 助教 Less
Review Section/Research Field	Principal Investigator Basic Section 29020:Thin film/surface and interfacial physical properties-related / Device related chemistry / Condensed matter physics I / Thin film/Surface and interfacial physical properties Except Principal Investigator Thin film/Surface and interfacial physical properties
Keywords	Principal Investigator 高誘電体材料 / 局所価電子状態 / 表面界面 / 二酸化ハフニウム / 表面界面反応 / シンクロトロン放射光 / Si半導体 / 光電子分光法 / 超薄膜 / 光電子分光 … More / Si(110) / コインシデンス分光 / シリコン半導体 / 金属薄膜酸化 / 放射光軟X線光電子分光 / 表面界面酸化反応 / 高誘電率ゲート絶縁膜材料 / 酸化反応 / ヘテロ界面 / 分子ビーム / X線光電子分光法 / ゲート絶縁膜 / 酸窒化反応 / 量子閉じ込め / 高誘電率材料 / マイクロ・ナノデバイス / オージェ電子分光法 / 光電子-オージェ電子コインシデンス分光法 / 酸化ハフニウム超薄膜 / 酸化ダイナミクス / ハフニウムシリサイド / 時間分解光電子分光法 / 表面界面反応追跡 / 金属酸化物半導体電界効果トランジスタ / 表面化学反応 / 酸化反応ダイナミクス / コインシデンス分光法 / 金属半導体ヘテロ界面 / 酸化ハフニウム / 表面界面物性 / シングルドメイン / MOS-FET / 高誘電体 / 半導体 / 界面物性 / 表面物性 / 薄膜 / photoelectron / Auger electron / HfO2 / coincidence spectroscopy / 微細加工 / 省エネルギー / 水素 / ハフニウム / 高誘電体超薄膜 / オージェ電子-光電子コインシデンス分光 / シリコン … More Except Principal Investigator 電子励起誘起イオン脱離 / 半導体表面 / 吸着分子 / 半導体 / コインシデンス分光 / オージェ電子分光 / 光電子分光 / 電子励起ダイナミクス / 局所電子状態 / 表面 Less

金属（Hf・Zr）／Si半導体表面界面局所構造中シリサイドの酸化反応理解と制御Principal Investigator
- Principal Investigator
  
  垣内拓大
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Ehime University
Growth processes and low-dimensional physical properties on ultrathin high-k materials film fabricated on concave-convex Si surface by spectroscopic observationPrincipal Investigator
- Principal Investigator
  
  Kakiuchi Takuhiro
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Device related chemistry
- Research Institution
  Ehime University
Fabrication of High Dielectric Ultrathin-Film Utilizing Inactivated Si(110) Single Domain Surface and Evaluation of Its Physical PropertyPrincipal Investigator
- Principal Investigator
  
  Kakiuchi Takuhiro
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Condensed matter physics I
- Research Institution
  Ehime University
Atomic-site-selective study of local electronic states and electronic-excitation-induced dynamics of molecules adsorbed on semiconductor surfaces
- Principal Investigator
  
  MASE Kazuhiko
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  High Energy Accelerator Research Organization
Quantitative Measurements of Local Valence Electronic States at Specific Surface and Interface of Ultrathin Metals and Metal Oxides High Dielectric FilmsPrincipal Investigator
- Principal Investigator
  
  KAKIUCHI Takuhiro
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Ehime University

All 2023 2022 2021 2020 2019 2018 2016 2015 2014 2013 2012 2011 Other

All Journal Article Presentation

[Journal Article] Oxidation Mechanisms of Hafnium Overlayers Deposited on an Si(111) Substrate2022
- Author(s)
  Kakiuchi Takuhiro、Matoba Tomoki、Koyama Daisuke、Yamamoto Yuki、Yoshigoe Akitaka
- Journal Title
  
  Langmuir
  
  Volume: 38 Issue: 8 Pages: 2642-2650
- DOI
  10.1021/acs.langmuir.1c02711
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05338, KAKENHI-PROJECT-21K04882
[Journal Article] Initial oxidation processes of ultrathin hafnium film and hafnium disilicide islands on Si(100)-2 × 1 surfaces studied using core-level X-ray photoelectron spectroscopy2020
- Author(s)
  Takuhiro Kakiuchi、Hideki Yamasaki、Chie Tsukada、Akitaka Yoshigoe
- Journal Title
  
  Surface Science
  
  Volume: 693 Pages: 121551-121551
- DOI
  10.1016/j.susc.2019.121551
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06030
[Journal Article] Local valence electronic states of silicon (sub)oxides on HfO_(2)/Si-(sub)oxide/Si(110) and HfSi_(2)/Si-(sub)oxide/Si(110) Islands2019
- Author(s)
  Takuhiro Kakiuchi, Kyouhei Ikeda, Kazuhiko Mase, Shin-ichi Nagaoka
- Journal Title
  
  Surface Science
  
  Volume: 681 Pages: 9-17
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06030
[Journal Article] Decay Processes of Si 2s Core Holes in Si(111)-7×7 Revealed by Si Auger Electron Si 2s Photoelectron Coincidence Measurements2014
- Author(s)
  K. Mase, K. Hiraga, S. Arae, R. Kanemura, Y. Takano, K. Yanase, Y. Ogashiwa, N. Shohata, N. Kanayama, T. Kakiuchi, S. Ohno, D. Sekiba, K. K. Okudaira, M. Okusawa and M. Tanaka
- Journal Title
  
  J. Phys. Soc. Jpn.
  
  Volume: 83 Issue: 9 Pages: 094704-094704
- DOI
  10.7566/jpsj.83.094704
- NAID
  210000133259
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360021
[Journal Article] Site-specific ion desorption from condensed F3SiCD2CH2Si(CH3)3 induced by Si-2p core-level ionizations studied with photoelectron photoion coincidence (PEPICO) spectroscopy, Auger photoelectron coincidence spectroscopy (APECS) and Auger electron photoion coincidence (AEPICO) spectroscopy2013
- Author(s)
  Kazuhiko Mase, Eiichi Kobayashi, Akira Nambu, Takuhiro Kakiuchi, Osamu Takahashi, Kiyohiko Tabayashi, Joji Ohshita, Shogo Hashimoto, Masatoshi Tanaka, Shin-ichi Nagaoka
- Journal Title
  
  Surf. Sci.
  
  Volume: 607 Pages: 174-180
- DOI
  10.1016/j.susc.2012.09.003
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540476, KAKENHI-PROJECT-24360021
[Journal Article] Attempts to Improve the Sensitivity and the Energy Resolution of an Analyzer for Auger Photoelectron Coincidence Spectroscopy and Electron Ion Coincidence Spectroscopy2013
- Author(s)
  Sadanori Arae, Rui Kanemura, Kenta Hiraga, Yosuke Ogashiwa, Kohtaro Yanase, Noritsugu Kanayama, Shinya Ohno, Takuhiro Kakiuchi, Kazuhiko Mase, Koji K. Okudaira, Makoto Okusawa, Masatoshi Tanaka
- Journal Title
  
  Journal of the Vacuum Society of Japan
  
  Volume: 56 Issue: 12 Pages: 507-510
- DOI
  10.3131/jvsj2.56.507
- NAID
  130004512908
- ISSN
  1882-2398, 1882-4749
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360021
[Presentation] ハフニウムが吸着したSi(111)基板の局所/全域で進行する酸化反応機構～Hfの蒸着量に依存した表面界面酸化状態の違い～2023
- Author(s)
  垣内拓大、津田泰孝、吉越章隆
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04882
[Presentation] 超音速酸素分子線照射による非平衡ハフニウム吸着シリコン(111) 表面界面での酸化反応2022
- Author(s)
  垣内拓大、穴井亮太、佐伯大殊、津田泰孝、吉越章隆
- Organizer
  第16回分子科学討論会
- Data Source
  KAKENHI-PROJECT-21K04882
[Presentation] 内殻光電子分光法によるHf/Si(111)超薄膜表面界面の酸化ダイナミクス2021
- Author(s)
  垣内拓大、的場友希、小山大輔、山本優貴、吉越章隆
- Organizer
  第15回分子科学討論会
- Data Source
  KAKENHI-PROJECT-21K04882
[Presentation] 超音速酸素分子線照射によるHfSi2/Si(111)表面の酸化と反応障壁高さ2021
- Author(s)
  垣内拓大、白石朗、山根亮太郎、矢野貴大、津田泰孝、吉越章隆
- Organizer
  2021年日本表面真空学会学術講演会
- Data Source
  KAKENHI-PROJECT-21K04882
[Presentation] Initial oxidation process of ultrathin hafnium film on Si(111) surface studied by Hf 4f, Si 2p, and O 1s core-level spectroscopy2019
- Author(s)
  Takuhiro Kakiuchi, Daisuke Koyama, Akitaka Yoshigoe
- Organizer
  日本表面真空学会学術講演会
- Data Source
  KAKENHI-PROJECT-17K06030
[Presentation] HfO2/Si超薄膜からのハフニウムジシリサイド形成とその表面局所電子状態2019
- Author(s)
  垣内拓大、小山大輔、間瀬一彦
- Organizer
  2018年度量子ビームサイエンスフェスタ
- Data Source
  KAKENHI-PROJECT-17K06030
[Presentation] Si-(sub)oxides selective local valence electronic states of HfSi_(2)/Si-(sub)oxides/Si(110) and HfO_(2)/Si-(sub)oxides/Si(110)2018
- Author(s)
  Takuhiro Kakiuchi, Kyohei Ikeda, Kazuhiko Mase, Shin-ichi Nagaoka
- Organizer
  The International Conference on Many Particle Spectroscopy of Atoms, Molecules, Clusters and Surfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06030
[Presentation] Influence of hafnium chemical state difference on initial silicon oxidation at interface between hafnium deposition and Si(100) substrate2018
- Author(s)
  Takuhiro Kakiuchi, Hideki Yamasaki, Chie Tsukada, Akitaka Yoshigoe
- Organizer
  2018年日本表面真空学会学術講演会
- Data Source
  KAKENHI-PROJECT-17K06030
[Presentation] Thickness Dependency of Local Valence Electronic State at Surface/Interface of Ultrathin HfSi2/Si(110) Film2018
- Author(s)
  Daisuke Koyama, Masahiro Yamasaki, Takuhiro Kakiuchi, Shin-ichi Nagaoka, Kazuhiko Mase
- Organizer
  日本化学会第98春季年会 (2018)
- Data Source
  KAKENHI-PROJECT-17K06030
[Presentation] Si(100)-2×1清浄表面に作製したハフニウム超薄膜の酸素吸着と脱離2018
- Author(s)
  垣内拓大、山崎英輝、塚田千恵、吉越章隆
- Organizer
  第12回分子科学討論会2018福岡
- Data Source
  KAKENHI-PROJECT-17K06030
[Presentation] Si(110)-16x2シングルドメイン表面上に作製したSiO2超薄膜の膜厚に依存した表面局所価電子状態の変化2016
- Author(s)
  垣内拓大、池田恭平、長岡伸一、間瀬一彦
- Organizer
  2015年度量子ビームサイエンスフェスタ（第33回PFシンポジウム）
- Place of Presentation
  つくば国際会議場、茨城県つくば市
- Year and Date
  2016-03-15
- Data Source
  KAKENHI-PROJECT-26870416
[Presentation] Si(110）-16x2シングルドメイン表面上に作製したHfおよびHfO2超薄膜の界面を選別した局所価電子状態2016
- Author(s)
  垣内拓大、池田恭平、長岡伸一、間瀬一彦
- Organizer
  2015年度量子ビームサイエンスフェスタ（第33回PFシンポジウム）
- Place of Presentation
  つくば国際会議場、茨城県つくば市
- Year and Date
  2016-03-15
- Data Source
  KAKENHI-PROJECT-26870416
[Presentation] Hafnium adsorption to clean Si(110)-16x2 single domain surface studied with photoelectron spectroscopy2015
- Author(s)
  Takuhiro Kakiuchi, Takuma Katsuragi, Yuji Nakano, Shin-ichi Nagaoka, Kazuhiko Mase
- Organizer
  13th International conference on electronic structure and spectroscopy
- Place of Presentation
  Stony Brook University, Stony Brook NY, USA
- Year and Date
  2015-09-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870416
[Presentation] Hydrogen adsorption to clean Si(110)-16x2 single domain surface and its chemical states2015
- Author(s)
  Takuhiro Kakiuchi, Yuji Nakano, Shin-ichi Nagaoka, Kazuhiko Mase
- Organizer
  13th International conference on electronic structure and spectroscopy
- Place of Presentation
  Stony Brook University, Stony Brook NY, USA
- Year and Date
  2015-09-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870416
[Presentation] 低速電子回折と光電子分光法によるHf蒸着Si(110)-16x2シングルドメイン表面の研究2015
- Author(s)
  垣内拓大、桂木拓磨、中納佑二、長岡伸一、間瀬一彦
- Organizer
  2015年真空・表面科学合同講演会
- Place of Presentation
  つくば国際会議場、茨城県つくば市
- Year and Date
  2015-12-01
- Data Source
  KAKENHI-PROJECT-26870416
[Presentation] X線光電子分光法、光電子-オージェ電子分光法による水素吸着Si(110)-16x2シングルドメイン表面の研究2015
- Author(s)
  垣内拓大、中納佑二、長岡伸一、間瀬一彦
- Organizer
  2015年真空・表面科学合同講演会
- Place of Presentation
  つくば国際会議場、茨城県つくば市
- Year and Date
  2015-12-01
- Data Source
  KAKENHI-PROJECT-26870416
[Presentation] Au-N6,7VVオージェ電子－Au-4f光電子コインシデンス分光測定によるAu-4f内殻正孔緩和過程の研究2015
- Author(s)
  小玉開，田中正人，大野真也，垣内拓大，間瀬一彦，奥平幸司，田中正俊，田中慎一郎
- Organizer
  第3回物構研サイエンスフェスタ
- Place of Presentation
  茨城県つくば市
- Year and Date
  2015-03-17
- Data Source
  KAKENHI-PROJECT-24360021
[Presentation] Decay Processes of Si 2s Core Holes in Si(111)-7×7 Revealed by Si Auger Electron Si 2s Photoelectron Coincidence Measurements2014
- Author(s)
  K. Mase, K. Hiraga, S. Arae, R. Kanemura, Y. Takano, K. Yanase, Y. Ogashiwa, N. Shohata, N. Kanayama, T. Kakiuchi, S. Ohno, D. Sekiba, K. Okudaira, M. Okusawa, M, Tanaka
- Organizer
  Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014)
- Place of Presentation
  Hawaii, USA
- Year and Date
  2014-12-09
- Data Source
  KAKENHI-PROJECT-24360021
[Presentation] Construction and Evaluation of Auger-photoelectron Coincidence Apparatus at BL13 of HiSOR2012
- Author(s)
  T. Kakiuchi, Y. Sato, S. Hanaoka, S. Kajikawa, H. Hayashita, M. Ogawa, S. Arae, S. Wada, T. Sekitani, M. Tanaka, and K. Mase
- Organizer
  The 16th Hiroshima International Symposium on Synchrotron Radiation
- Place of Presentation
  Hiroshima University
- Year and Date
  2012-03-01
- Data Source
  KAKENHI-PROJECT-23760035
[Presentation] Local Valence Electronic States of Si(110)-16×2 Clean Surface Studied Using Auger-photoelectron Coincidence spectroscopy2012
- Author(s)
  T Kakiuchi, Y. Sato, S. Hanaoka, R. Sakao, S. Arae, M. Tanaka, S. Nagaoka and K. Mase
- Place of Presentation
  Epochal Tsukuba
- Data Source
  KAKENHI-PROJECT-23760035
[Presentation] オージェ電子-光電子コインシデンス分光法による Si(110)-16×2 清浄表面の局所価電子状態の観測2012
- Author(s)
  垣内拓大、佐藤勇輝、花岡咲、長岡伸一、間瀬一彦
- Organizer
  第6回分子科学討論会2012東京
- Place of Presentation
  東京大学本郷キャンパス
- Year and Date
  2012-09-19
- Data Source
  KAKENHI-PROJECT-23760035
[Presentation] APECSを用いたSi(110)-16×2清浄表面の局所価電子状態の研究2012
- Author(s)
  垣内拓大、佐藤勇輝、花岡咲、坂尾諒、新江定憲、田中正俊、長岡伸一、間瀬一彦
- Organizer
  第29回　PF Symposium
- Place of Presentation
  つくば国際会議場エポカル
- Data Source
  KAKENHI-PROJECT-23760035
[Presentation] Construction and Evaluation of APECS at BL13 HiSOR2012
- Author(s)
  T. Kakiuchi, S. Nagaoka, and K. Mase
- Organizer
  The 16th 広島放射光国際シンポジウム
- Place of Presentation
  Hiroshima University Faculty Club
- Data Source
  KAKENHI-PROJECT-23760035
[Presentation] オージェ電子-光電子コインシデンス分光法による SiO_2/Si 超薄膜の表面界面基板を選別した局所価電子状態の研究2012
- Author(s)
  垣内拓大
- Organizer
  第32回表面科学学術講演会
- Place of Presentation
  東北大学さくらホール
- Year and Date
  2012-11-22
- Data Source
  KAKENHI-PROJECT-23760035
[Presentation] オージェ電子-光電子コインシデンス分光法によるSi(110)-16×２清浄表面の局所価電子状態の観測2012
- Author(s)
  垣内拓大
- Organizer
  第６回分子科学討論会
- Place of Presentation
  東京大学
- Data Source
  KAKENHI-PROJECT-23760035
[Presentation] Si(110)-16×2 清浄表面の最安定構造モデル2011
- Author(s)
  垣内拓大、久保田裕之、田原雅士、間瀬一彦、長岡伸一
- Organizer
  第5回分子科学討論会2011年札幌
- Place of Presentation
  札幌コンベンションセンター
- Year and Date
  2011-09-20
- Data Source
  KAKENHI-PROJECT-23760035
[Presentation] 水の解離吸着によるSi(110)-16×2清浄面の表面構造と局所価電子状態の変化
- Author(s)
  垣内拓大，西浦伸吾，川本淳滋，長岡伸一，間瀬一彦
- Organizer
  第34回表面科学学術講演会
- Place of Presentation
  くにびきメッセ（島根県・松江市）
- Year and Date
  2014-11-06 – 2014-11-08
- Data Source
  KAKENHI-PROJECT-26870416
[Presentation] Surface Structure and Local Valence Electronic States of Si(110)-16×2 Surface after Exposure to Water: XPS and Auger-Photoelectron Coincidence Study
- Author(s)
  T. Kakiuchi, S. Nishiura1, J. Kawamoto1, S. Nagaoka, K. Mase
- Organizer
  Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2014)
- Place of Presentation
  Hapuna Beach Prince Hotel （Kohala coast, Hawaii, USA)
- Year and Date
  2014-12-07 – 2014-12-11
- Data Source
  KAKENHI-PROJECT-26870416
[Presentation] Si(110)-16×2シングルドメイン清浄表面への水素吸着過程とその表面物性
- Author(s)
  垣内拓大，中納佑二，長岡伸一，間瀬一彦
- Organizer
  第3回物構研サイエンスフェスタ（第32回PFシンポジウム）
- Place of Presentation
  つくば国際会議場（茨城県・つくば市）
- Year and Date
  2015-03-17 – 2015-03-18
- Data Source
  KAKENHI-PROJECT-26870416
[Presentation] Si(110)-16×2清浄表面へのH2O解離吸着：表面物性と表面１次元構造の変化
- Author(s)
  垣内拓大，西浦伸吾，川本淳滋，長岡伸一，間瀬一彦
- Organizer
  第8回分子科学討論会
- Place of Presentation
  広島大学（広島県・東広島市）
- Year and Date
  2014-09-21 – 2014-09-24
- Data Source
  KAKENHI-PROJECT-26870416

1. MASE Kazuhiko (40241244)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
2. OZAWA Kenichi (00282822)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. NAGAOKA Shin-ichi (30164403)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. OKUDAIRA Koji (50202023)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
5. TANAKA Masatoshi (90130400)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
6. OKUSAWA Makoto (50112537)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
7. 高橋修

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
8. 吉越章隆

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

KAKIUCHI Takuhiro 垣内 拓大

垣内 拓大 カキウチ タクヒロ

Kakiuchi Takuhiro 垣内 拓大

Research Projects

Research Products

Co-Researchers

金属（Hf・Zr）／Si半導体表面界面局所構造中シリサイドの酸化反応理解と制御Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Growth processes and low-dimensional physical properties on ultrathin high-k materials film fabricated on concave-convex Si surface by spectroscopic observationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fabrication of High Dielectric Ultrathin-Film Utilizing Inactivated Si(110) Single Domain Surface and Evaluation of Its Physical PropertyPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Atomic-site-selective study of local electronic states and electronic-excitation-induced dynamics of molecules adsorbed on semiconductor surfaces

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Quantitative Measurements of Local Valence Electronic States at Specific Surface and Interface of Ultrathin Metals and Metal Oxides High Dielectric FilmsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Oxidation Mechanisms of Hafnium Overlayers Deposited on an Si(111) Substrate2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Initial oxidation processes of ultrathin hafnium film and hafnium disilicide islands on Si(100)-2 × 1 surfaces studied using core-level X-ray photoelectron spectroscopy2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Local valence electronic states of silicon (sub)oxides on HfO_(2)/Si-(sub)oxide/Si(110) and HfSi_(2)/Si-(sub)oxide/Si(110) Islands2019

Author(s)

Journal Title

Data Source

[Journal Article] Decay Processes of Si 2s Core Holes in Si(111)-7×7 Revealed by Si Auger Electron Si 2s Photoelectron Coincidence Measurements2014

Author(s)

Journal Title

DOI

NAID

Data Source

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Attempts to Improve the Sensitivity and the Energy Resolution of an Analyzer for Auger Photoelectron Coincidence Spectroscopy and Electron Ion Coincidence Spectroscopy2013

Author(s)

Journal Title

DOI

NAID

ISSN

Language

Data Source

[Presentation] ハフニウムが吸着したSi(111)基板の局所/全域で進行する酸化反応機構 ～Hfの蒸着量に依存した表面界面酸化状態の違い～2023

Author(s)

Organizer

Data Source

[Presentation] 超音速酸素分子線照射による非平衡ハフニウム吸着シリコン(111) 表面界面での酸化反応2022

Author(s)

Organizer

Data Source

[Presentation] 内殻光電子分光法によるHf/Si(111)超薄膜表面界面の酸化ダイナミクス2021

Author(s)

Organizer

Data Source

KAKIUCHI Takuhiro 垣内拓大

垣内拓大カキウチタクヒロ

Kakiuchi Takuhiro 垣内拓大

[Presentation] ハフニウムが吸着したSi(111)基板の局所/全域で進行する酸化反応機構～Hfの蒸着量に依存した表面界面酸化状態の違い～2023