KANBE Hiroshi 神戸宏

Researcher Number	10299373
Other IDs
Affiliation (based on the past Project Information) *help	2012: 高知工科大学, 名誉教授 2002 – 2006: 高知工科大学, 工学部, 教授 1999 – 2000: 高知工科大学, 工学部, 教授
Review Section/Research Field	Principal Investigator Applied optics/Quantum optical engineering Except Principal Investigator Physical properties of metals / Physical properties of metals / 表面界面物性
Keywords	Principal Investigator InGaAs / ウェハーボンディング / ヘテロ接合 / アバランシフォトダイオード Except Principal Investigator GaSb / イオン照射 / ボイド / 自己組織化 / GaN / TLM … More / FIB / ナノ構造 / 半導体 / 点欠陥 / イオンビーム / ナノセル / ナノファブリケイション / semiconductor / surface / nano fabrication / cellular structure / point defect / void / ion implantation / セル構造 / ナノテクノロジー / 照射損傷 / TEM / 表面 / ナノファブリケーション / セル状構造 / イオン注入 / Tetrahedral amorphous C / X-ray lens / MeV ion scattering / Widegap semiconductors / Contact resistivity / semiconductor interface / Metal / イオン散乱法 / 水素検出 / ダイヤモンド / GaN(チッ化ガリウム) / 金属-半導体界面 / 局所蛍光X線分析 / ガラスキャピラリー / 電子エミッター / テトラヘドラル・アモルファス・カーボン / カーボン系材料 / X線収束 / MeVイオン散乱法 / ワイドギャップ半導体 / 接触抵抗 / 半導体界面 / 金属 / InSb / 電子顕微鏡 / 半導体超微細化 / 格子間原子 / 原子空孔 / 格子欠陥 Less

Establishment of nanocell fabrication on semiconductor surface utilizing self-organizational movement of point defects
- Principal Investigator
  
  TANIWAKI Masafumi
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Physical properties of metals
- Research Institution
  Kochi University of Technology
超微細セル状表面構造を高機能デバイスに利用するための基礎的研究
- Principal Investigator
  
  TANIWAKI Masafumi
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Physical properties of metals
- Research Institution
  Kochi University of Technology
Formation of honeycomb structure by ion implantation- clarification of the mechanism and its application to nano-fabrication
- Principal Investigator
  
  TANIWAKI Masafumi
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Physical properties of metals
- Research Institution
  Kochi University of Technology
光通信用高性能Si基板ヘテロ接合アバランシフォトダイオードPrincipal Investigator
- Principal Investigator
  
  神戸宏
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  Kochi University of Technology
Study of Metal/Semiconductor Interfaces
- Principal Investigator
  
  NARUSAWA Tadashi
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  表面界面物性
- Research Institution
  Kochi University of Technology

All 2013 2011 2010

All Journal Article Presentation

[Journal Article] Investigation of Wafer-Bonded InAs/Si Heterojunction by Transmission Electron Microscopy2013
- Author(s)
  Hiroshi Kanbe, Masanori Tada, Takuya Kochigahama, Masafumi Taniwaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 1R Pages: 11201-11201
- DOI
  10.7567/jjap.52.011201
- NAID
  210000141720
- Data Source
  KAKENHI-PROJECT-22360268
[Journal Article] Investigation of Wafer-Bonded InAs/Si Heterojunction by Transmission Electron Microscopy2013
- Author(s)
  H. Kanbe, M. Tada, T. Kochigahama and M. Taniwaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52
- NAID
  210000141720
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360268
[Journal Article] Pulsed laser excitation power dependence of photoluminescence peak energies in bulk ZnO2011
- Author(s)
  Giang T.Dang, Hiroshi Kanbe, Toshiyuki Kawaharamura, Masafumi Taniwaki
- Journal Title
  
  J.Appl.Phys.
  
  Volume: 110 Issue: 8
- DOI
  10.1063/1.3653273
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360268
[Journal Article] Crystallographic Properties of Ge/Si Heterojunctions Fabricated by Wet Water Bonding2010
- Author(s)
  H.Kanbe, M.Hirose, T.Ito, M.Taniwaki
- Journal Title
  
  J.Electronic Materials
  
  Volume: 39 Pages: 1248-1254
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360268
[Journal Article] Crystallographic Properties of Ge/Si Heterojunctions Fabricated by Wet Wafer Bonding2010
- Author(s)
  H. Kanbe, M. Hirose, T. Ito and M. Taniwaki
- Journal Title
  
  Journal of Electronic Materials
  
  Volume: Volume 39, Issue 8 Pages: 1248-1255
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360268
[Presentation] Photoluminescence mechanisms of an Al0.5Ga0.5As/GaAs multiple quantum well in the temperature range from 5 K to 296 K2011
- Author(s)
  Giang T. Dang, Hiroshi Kanbe and Masafumi Taniwaki
- Organizer
  日本材料科学会四国支部第20回講演大会
- Place of Presentation
  高知工科大学
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-22360268

1. TANIWAKI Masafumi (20133712)

# of Collaborated Projects: 3 results

# of Collaborated Products: 6 results
2. YOSHIIE Toshimasa (20124844)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
3. MAEDA Toshihiko (50399169)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. NITTA Noriko (80412443)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. XU Qiu (90273531)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. NARUSAWA Tadashi (30299383)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. HATTA Akimitsu (50243184)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. SATOH Yuhki (20211948)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

KANBE Hiroshi 神戸 宏

Research Projects

Research Products

Co-Researchers

Establishment of nanocell fabrication on semiconductor surface utilizing self-organizational movement of point defects

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

超微細セル状表面構造を高機能デバイスに利用するための基礎的研究

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Formation of honeycomb structure by ion implantation- clarification of the mechanism and its application to nano-fabrication

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

光通信用高性能Si基板ヘテロ接合アバランシフォトダイオードPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study of Metal/Semiconductor Interfaces

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Investigation of Wafer-Bonded InAs/Si Heterojunction by Transmission Electron Microscopy2013

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Investigation of Wafer-Bonded InAs/Si Heterojunction by Transmission Electron Microscopy2013

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Pulsed laser excitation power dependence of photoluminescence peak energies in bulk ZnO2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Crystallographic Properties of Ge/Si Heterojunctions Fabricated by Wet Water Bonding2010

Author(s)

Journal Title

Data Source

[Journal Article] Crystallographic Properties of Ge/Si Heterojunctions Fabricated by Wet Wafer Bonding2010

Author(s)

Journal Title

Data Source

[Presentation] Photoluminescence mechanisms of an Al0.5Ga0.5As/GaAs multiple quantum well in the temperature range from 5 K to 296 K2011

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

KANBE Hiroshi 神戸宏