OGAWA Masaki 小川正毅

Researcher Number	10377773
Other IDs
Affiliation (based on the past Project Information) *help	2007 – 2009: 名古屋大学, エコトピア科学研究所, 教授 2006: 名古屋大学, 先端技術共同研究センター, 教授
Review Section/Research Field	Except Principal Investigator Thin film/Surface and interfacial physical properties / Science and Engineering
Keywords	Except Principal Investigator IV族半導体 / 格子欠陥 / 結晶工学 / 半導体工学 / ひずみ / 酸化現象 / エピタキシャル成長 / 走査トンネル顕微鏡 / 表面・界面物理 / 水素 … More / 錫 / ゲルマニウム / 歪ゲルマニウム / ゲートスタック構造 / ポストスケーリング / 表面・界面物性 / 半導体物性 / ナノ材料 / デバイス設計・製造プロセス / 半導体超微細化 Less

Construction of High-k Gate/Strain-engineered Germanium channel Structures with Functional Nano-system
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Creation of tensile-strained Ge high-mobility-channel by thermal nonequilibrium process
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University

All 2010 2009 2008 2007 2006

All Journal Article Presentation Patent

[Journal Article] Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor2010
- Author(s)
  H. Kondo, S. Sakurai, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima
- Journal Title
  
  Appl. Phys. Lett. 96
  
  Pages: 12105-12105
- NAID
  120002414452
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor2010
- Author(s)
  H.Kondo, S.Sakurai, M.Sakashita, A.Sakai, M.Ogawa, S.Zaima
- Journal Title
  
  Appl.Phys.Lett. 96
- NAID
  120002414452
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Microstructures in directly bonded Sisubstrates2009
- Author(s)
  Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori
- Journal Title
  
  Solid-State Electronics 53
  
  Pages: 837-840
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si_<1-x>Ge_x Structures on Si(001) Substrates2009
- Author(s)
  T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa, S. Zaima
- Journal Title
  
  Solid-State Electronics 53(11)
  
  Pages: 1198-1201
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System2008
- Author(s)
  O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa, S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys. 47(4)
  
  Pages: 2402-2406
- NAID
  10022551560
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors2008
- Author(s)
  K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 2420-2424
- NAID
  10022549067
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Growth of highly strain-relaxed Ge_<1-x>Sn_x/virtual Ge by a Sn precipitation controlled compositionally step-graded method2008
- Author(s)
  S.Takeuchi, Y.Shimura, O.Nakatsuka, S.Zaima, M.Ogawa, and A.Sakai
- Journal Title
  
  Appl.Phys.Lett. 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Growth of highly strain-relaxed Ge_<1-x>Sn_x/virtual Ge by a Sn precipitation controlled compositionally step-graded method2008
- Author(s)
  S. Takeuchi, Y. Shimura, O. Nakatsuka, S. Zaima, M. Ogawa, A. Sakai
- Journal Title
  
  Appl. Phys. Lett. 92
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge_<1-x>Sn_x Layers on Ge (001) Substrates2008
- Author(s)
  M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima
- Journal Title
  
  Appl. Surf. Sci. (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206005
[Journal Article] Silicide and germanide technology for contacts and gates in MOSFET applications2008
- Author(s)
  S.Zaima, O.Nakatsuka, H.Kondo, M.Sakashita, A.Sakai, M.Ogawa
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 80-83
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Growth of highly strain-relaxed Ge_<1-x> Sn_x/virtual Ge by a Sn precipitation controlled compositionally step-graded method2008
- Author(s)
  S.Takeuchi, Y.Shimura, O.Nakatsuka, S.Zaima, M.Ogawa, A.Sakai
- Journal Title
  
  Appl.Phys.Lett. 92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge_<1-x>Sn_x Layers on Ge(001) Substrates2008
- Author(s)
  M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima
- Journal Title
  
  Appl. Surf. Sci 254(19)
  
  Pages: 6048-60651
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206005
[Journal Article] Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors2008
- Author(s)
  K.Furumai, H.Kondo, M.Sakashita, A.Sakai, M.Ogawa and S.Zaima
- Journal Title
  
  Jpn.J.Appl.Phys. 47(4)
  
  Pages: 2420-2424
- NAID
  10022549067
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors2008
- Author(s)
  K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys. 47(4)
  
  Pages: 2420-2424
- NAID
  10022549067
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Silicide and germanide technology for contacts and gates in MOSFET applications2008
- Author(s)
  S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa
- Journal Title
  
  Thin Solid Films 517(1)
  
  Pages: 80-83
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Tensile strained Ge layers on strain-relaxed Ge_<1-x>Sn_x/virtual Ge substrates2008
- Author(s)
  S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima
- Journal Title
  
  Thin Solid Films 517(1)
  
  Pages: 159-162
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Tensile strained Ge layers on strain-relaxed Ge_<1-x>Sn_x/virtual Ge substrates2008
- Author(s)
  S.Takeuchi, A.Sakai, O.Nakatsuka, M.Ogawa, and S.Zaima
- Journal Title
  
  Thin Solid Films 517(1)
  
  Pages: 159-162
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Characterization of bonding structures of directly bonded hybrid crystal orientation substrates2008
- Author(s)
  E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, M. Ogawa, S. Zaima
- Journal Title
  
  Thin Solid Films 517(1)
  
  Pages: 323-326
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Dependence of Electrical Characteristics on Interfacial Structure of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System2008
- Author(s)
  O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 2402-2406
- NAID
  10022551560
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Tensile strained Ge layers on strain-relaxed Ge_<1-x> Sn_x/virtual Ge substrates2008
- Author(s)
  S.Takeuchi, A.Sakai, O.Nakatsuka, M.Ogawa, S.Zaima
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 159-162
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Ge(001)表面の酸素エッチングおよび初期酸化過程の原子スケール評価2007
- Author(s)
  山崎理弘, 若園恭伸, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明
- Journal Title
  
  特別研究会研究報告"ゲートスタック研究会-材料・プロセス・評価の物理-"(第12回研究会)
  
  Pages: 197-202
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206005
[Journal Article] Growth and structure evaluation of strain-relaxed Ge_1-xSn_x buffer layers grown on various types of substrates2007
- Author(s)
  S.Takeuchi, A.Sakai, K.Yamamoto, O.Nakatsuka, M.Ogawa, S.Zaima
- Journal Title
  
  Semiconductor Science and Technology 22 (1)
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] パルスレーザー蒸着法によるGe基板上へのPr酸化膜の作製とその構造及び電気的特性評価2007
- Author(s)
  鬼頭伸幸, 坂下満男, 酒井朗, 中塚理, 近藤博基, 小川正毅, 財満鎭明
- Journal Title
  
  特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"(第12回研究会)
  
  Pages: 251-256
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Composition dependence of work function in metal (Ni, Pt)-germanide gate electrode2007
- Author(s)
  D. Ikeno, Y. Kaneko, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima
- Journal Title
  
  Jpn. J. Appl. phys. 46(4B)
  
  Pages: 1865-1869
- NAID
  10022545673
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Scanning Tunneling Microscopy Study on the Reaction of Oxygen with Clean Ge(001) Surfaces2007
- Author(s)
  A. Sakai, Y. Wakazono, O. Nakatsuka, S. Zaima, and M. Ogawa
- Journal Title
  
  ECS Trans 3(7)
  
  Pages: 1197-1203
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206005
[Journal Article] Growth and structure evaluation of strain-relaxed Ge_<1-x>Sn_x buffer layers grown on various types of substrates2007
- Author(s)
  S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, S. Zaima
- Journal Title
  
  Semicond. Sci. Technol. 22(1)
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Pt-germanideゲート電極の結晶構造及び電気的特性の評価2007
- Author(s)
  池野大輔, 古米孝平, 近藤博基, 坂下満男, 酒井朗, 小川正毅, 財満鎭明
- Journal Title
  
  特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"(第12回研究会)
  
  Pages: 277-282
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Comparison Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes2007
- Author(s)
  D.Ikeno, K.Furumai, H.Kondo, M.Sakashita, A.Sakai, M.Ogawa, S.Zaima
- Journal Title
  
  Japanese Journal of Applied Physics 46 (4B)
  
  Pages: 1865-1869
- Data Source
  KAKENHI-PROJECT-18063012
[Patent] 多層膜構造体の形成方法2008
- Inventor(s)
  中塚理、酒井朗、小川正毅, (他4名)
- Industrial Property Rights Holder
  名古屋大学
- Industrial Property Number
  2008-122891
- Filing Date
  2008
- Data Source
  KAKENHI-PROJECT-18063012
[Patent] 多層膜構造体の形成方法2007
- Inventor(s)
  中塚理、酒井朗、小川正毅、財満鎭明、近藤博基、湯川勝規、水谷卓也
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Filing Date
  2007
- Data Source
  KAKENHI-PROJECT-18063012
[Patent] 伸張歪ゲルマニウム薄膜の作製方法、伸張歪ゲルマニウム薄膜、及び多層膜構造体2007
- Inventor(s)
  竹内正太郎, 酒井朗, 中塚理, 小川正毅, 財満鎭明
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Filing Date
  2007-05-17
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] New insights into flatband voltage shift and minority carrier generation in GeO_2/Ge MOS devices2009
- Author(s)
  T. Hosoi, M. Saito, I. Hideshima, G. Okamoto, K. Kutsuki, T. Shimura, S. Ogawa, T. Yamamoto, H. Watanabe
- Organizer
  40^<th> IEEE Semiconductor Interface Specialist Conference
- Place of Presentation
  Arlington, USA
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Effect of Hydrogen on Initial Growth of Sn and Ge_<1-x>Sn_x on Ge(001) substrates2008
- Author(s)
  M. Yamazaki, O. Nakatsuka, T. Shinoda, A. Sakai, M. Ogawa, and S. Zaima
- Organizer
  The fourth International SiGe Technology and Device Meeting (ISTDM)
- Place of Presentation
  HsinChu, Taiwan
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Formation of Ge_3N_4/Ge structures using nitrogen radicals and their thermal stability2008
- Author(s)
  S. Oda, H. Kondo, M. Ogawa, S. Zaima
- Organizer
  214th ECS meeting
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates2008
- Author(s)
  E. Toyoda, A. Sakai, O. Nakatsuka, S. Zaima, M. Ogawa, H. Isogai, T. Senda, K. Izunome, K. Omote
- Organizer
  The fourth International SiGe Technology and Device Meeting
- Place of Presentation
  HsinChu, Taiwan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Microstructures in Directly Bonded Si Substrates2008
- Author(s)
  A. Sakai, Y. Ohara, T. Ueda, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda
- Organizer
  The fourth International SiGe Technology and Device Meeting
- Place of Presentation
  HsinChu, Taiwan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Metalorganic Chemical Vapor Deposition of High-Dielectric-Constant Praseodymium Oxide Films using a Liquid Cyclopentadienyl Precursor2008
- Author(s)
  H. Kondo, S. Sakurai, A. Sakai, M. Ogawa, S. Zaima
- Organizer
  2008 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Growth and Characterization of Tensile- Strained Ge Layers on Strain Relaxed Ge_<1-x>Sn_x Buffer Layers2007
- Author(s)
  Invited: O. Nakatsuka, S. Takeuchi, A. Sakai, M. Ogawa, S. Zaima
- Organizer
  The 3nd international workshop on new group IV semiconductor nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Surface Treatment of Ge(001) Surface by Radical Nitridation2007
- Author(s)
  H. Kondo, M. Fujita, A. Sakai, M. Ogawa, S. Zaima
- Organizer
  2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Tensile strained Ge layers on strain-relaxed Ge_<1-x>Sn_x/virtual Ge substrates2007
- Author(s)
  S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Strain and dislocations in group IV semiconductor heterostructures(招待講演)2007
- Author(s)
  A.Sakai, O.Nakatsuka, M.Ogawa, and S.Zaima
- Organizer
  Materials Research Society 2007 Spring Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Defect Control for Ge/Si and Ge_<1-x>Sn_x/Ge/Si Heterostructures2007
- Author(s)
  Invited: A. Sakai, S. Takeuchi, O. Nakatsuka, M. Ogawa, S. Zaima
- Organizer
  Fifth International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors2007
- Author(s)
  K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima
- Organizer
  2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge_<1-x>Sn_x Layers on Ge(001) Substrates2007
- Author(s)
  M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima
- Organizer
  Fifth International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Defect Control for Ge/Si and Ge1-xSnx/Ge/Si Heterostructures (Invited)2007
- Author(s)
  A. Sakai, S. Takeuchi, O. Nakatsuka, M. Ogawa, and S. Zaima
- Organizer
  Fifth International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  Tokyo, Japan.
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Ge(001)表面の酸素エッチングおよび酸化過程の走査トンネル顕微鏡による観察評価2007
- Author(s)
  山崎理弘, 若園恭伸, 酒井朗, 中塚理, 小川正毅, 財満鎭明
- Organizer
  第6回・日本表面科学会中部支部・学術講演会
- Place of Presentation
  名古屋大学
- Year and Date
  2007-04-14
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Ge(001)表面の酸素エッチングおよび初期酸化過程の原子スケール評価2007
- Author(s)
  山崎理弘, 若園恭伸, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理-」(第12回研究会)
- Place of Presentation
  三島市
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] canning Tunneling Microscopy Observation of Initial Growth of Sn and Ge_<1-x>Sn_x Layers on Ge(001) Substrates2007
- Author(s)
  M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima
- Organizer
  Fifth International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Ge(001)表面の酸素エッチングおよび酸化過程の走査トンネル顕微鏡による観察評価2007
- Author(s)
  山崎理弘, 若園恭伸, 酒井朗, 中塚理, 小川正毅, 財満鎭明
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Strain and dislocations in group IV semiconductor heterostructures2007
- Author(s)
  Invited: A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima
- Organizer
  Materials Research Society 2007 Spring Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Ge(001)表面の初期酸化およびエッチング過程の走査トンネル顕微鏡評価2006
- Author(s)
  若園恭伸, 山崎理弘, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明
- Organizer
  第67回応用物理学会学術講演会
- Place of Presentation
  立命館大学
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Scanning Tunneling Microscopy Study on the Reaction of Oxygen with Clean Ge(001) Surfaces2006
- Author(s)
  A. Sakai, Y. Wakazono, O. Nakatsuka, S. Zaima, and M. Ogawa
- Organizer
  210th Meeting of The Electrochemical Society
- Place of Presentation
  Cancun, Mexico
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Composition dependence of work function in metal (Ni, Pt)-germanide gate electrodes2006
- Author(s)
  D. Ikeno, K. Furumai, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima
- Organizer
  2006 International Conference on Solid State Devices and Materials
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Growth and structure evaluation of strain-relaxed Ge_<1-x>Sn_x buffer layers on virtual Ge(001) substrates2006
- Author(s)
  S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, S. Zaima
- Organizer
  The Third International SiGe Technology and Device Meeting
- Place of Presentation
  Princeton, USA
- Data Source
  KAKENHI-PROJECT-18063012

1. ZAIMA Shigeaki (70158947)

# of Collaborated Projects: 2 results

# of Collaborated Products: 50 results
2. SAKAI Akira (20314031)

# of Collaborated Projects: 2 results

# of Collaborated Products: 49 results
3. KONDO Hiroki (50345930)

# of Collaborated Projects: 2 results

# of Collaborated Products: 17 results
4. NAKATSUKA Osamu (20334998)

# of Collaborated Projects: 2 results

# of Collaborated Products: 37 results
5. WATANABE Heiji (90379115)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
6. SAKASHITA Mitsuo (30225792)

# of Collaborated Projects: 1 results

# of Collaborated Products: 13 results

OGAWA Masaki 小川 正毅

Research Projects

Research Products

Co-Researchers

Construction of High-k Gate/Strain-engineered Germanium channel Structures with Functional Nano-system

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Review Section

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Creation of tensile-strained Ge high-mobility-channel by thermal nonequilibrium process

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[Journal Article] Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor2010

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NAID

Data Source

[Journal Article] Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor2010

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NAID

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[Journal Article] Microstructures in directly bonded Sisubstrates2009

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[Journal Article] Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si_<1-x>Ge_x Structures on Si(001) Substrates2009

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[Journal Article] Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System2008

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NAID

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[Journal Article] Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors2008

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NAID

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[Journal Article] Growth of highly strain-relaxed Ge_<1-x>Sn_x/virtual Ge by a Sn precipitation controlled compositionally step-graded method2008

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[Journal Article] Growth of highly strain-relaxed Ge_<1-x>Sn_x/virtual Ge by a Sn precipitation controlled compositionally step-graded method2008

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[Journal Article] Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge_<1-x>Sn_x Layers on Ge (001) Substrates2008

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[Journal Article] Silicide and germanide technology for contacts and gates in MOSFET applications2008

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[Journal Article] Growth of highly strain-relaxed Ge_<1-x> Sn_x/virtual Ge by a Sn precipitation controlled compositionally step-graded method2008

Author(s)

Journal Title

Data Source

[Journal Article] Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge_<1-x>Sn_x Layers on Ge(001) Substrates2008

Author(s)

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Data Source

[Journal Article] Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors2008

Author(s)

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NAID

Data Source

[Journal Article] Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors2008

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Silicide and germanide technology for contacts and gates in MOSFET applications2008

Author(s)

OGAWA Masaki 小川正毅