NABATAME Toshihide 生田目俊秀

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NABATAME TOSHIHIDE 生田目俊秀

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Researcher Number	10551343
Other IDs
Affiliation (Current)	2025: 国立研究開発法人物質・材料研究機構, ナノアーキテクトニクス材料研究センター, 特命研究員
Affiliation (based on the past Project Information) *help	2023: 国立研究開発法人物質・材料研究機構, ナノアーキテクトニクス材料研究センター, 特命研究員 2022: 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 特命研究員 2020 – 2021: 国立研究開発法人物質・材料研究機構, 技術開発・共用部門, グループリーダー
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related
Keywords	Principal Investigator Al2O3 / ZrO2 / 電気特性 / 積層膜 / 複合酸化物 / キャパシタ / 巨大誘電率 / 酸素欠損 / ナノラミネート複合機能膜 / 誘電率 … More / MIMキャパシタ / (HfO2)/(ZrO2)膜 / ナノラミネート膜 / GaNパワーデバイス / HfZrOx膜 / HfAlOx膜 / 高誘電率 / 機能性複合酸化物膜 / ナノラミネート構造 / 原子層堆積法 Less

Nanolaminate multifunctional film with the atomic-level oxygen vacancy control and its mechanism of giant dielectric constantPrincipal Investigator
- Principal Investigator
  
  NABATAME TOSHIHIDE
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute for Materials Science

All 2024 2023 2022 2021 2020

All Journal Article Presentation

[Journal Article] 電子デバイスへ向けた原子層堆積法で作製した金属酸化膜の研究2023
- Author(s)
  生田目俊秀
- Journal Title
  
  表面技術
  
  Volume: 74 Pages: 137-140
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02189
[Journal Article] Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1-xO2 thin films2023
- Author(s)
  Onaya Takashi, Nabatame Toshihide, Nagata Takahiro, Tsukagoshi Kazuhito, Kim Jiyoung, Nam Chang-Yong, Tsai Esther H.R., Kita Koji
- Journal Title
  
  Solid-State Electronics
  
  Volume: 210 Pages: 108801-108801
- DOI
  10.1016/j.sse.2023.108801
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04550, KAKENHI-PROJECT-20H02189
[Journal Article] (Invited) Characteristics of GaN/High-k Capacitors Under Positive Bias Stress2023
- Author(s)
  Toshihide Nabatame, Tomomi Sawada, Yoshihiro Irokawa, Yasuo Koide, Kazuhito Tsukagoshi
- Journal Title
  
  ECS Transactions
  
  Volume: 112 Issue: 1 Pages: 109-117
- DOI
  10.1149/11201.0109ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02189
[Journal Article] Wake-up-free properties and high fatigue resistance of HfxZr1-xO2-based metal-ferroelectric-semiconductor using top ZrO2 nucleation layer at low thermal budget (300°C)2022
- Author(s)
  Onaya Takashi、Nabatame Toshihide、Inoue Mari、Sawada Tomomi、Ota Hiroyuki、Morita Yukinori
- Journal Title
  
  APL Materials
  
  Volume: 10 Issue: 5 Pages: 051110-051110
- DOI
  10.1063/5.0091661
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02189, KAKENHI-PROJECT-21J01667
[Journal Article] (Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device2021
- Author(s)
  Nabatame Toshihide、Maeda Erika、Inoue Mari、Hirose Masafumi、Ochi Ryota、Sawada Tomomi、Irokawa Yoshihiro、Hashizume Tamotsu、Shiozaki Koji、Onaya Takashi、Tsukagoshi Kazuhito、Koide Yasuo
- Journal Title
  
  ECS Transactions
  
  Volume: 104 Issue: 4 Pages: 113-120
- DOI
  10.1149/10404.0113ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02189, KAKENHI-PROJECT-21J01667
[Journal Article] Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing2021
- Author(s)
  Hirose Masafumi、Nabatame Toshihide、Irokawa Yoshihiro、Maeda Erika、Ohi Akihiko、Ikeda Naoki、Sang Liwen、Koide Yasuo、Kiyono Hajime
- Journal Title
  
  Journal of Vacuum Science &Technology A
  
  Volume: 39 Issue: 1 Pages: 012401-012401
- DOI
  10.1116/6.0000626
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02189
[Journal Article] Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis2021
- Author(s)
  Onaya Takashi、Nabatame Toshihide、Jung Yong Chan、Hernandez-Arriaga Heber、Mohan Jaidah、Kim Harrison Sejoon、Sawamoto Naomi、Nam Chang-Yong、Tsai Esther H. R.、Nagata Takahiro、Kim Jiyoung、Ogura Atsushi
- Journal Title
  
  APL Materials
  
  Volume: 9 Issue: 3 Pages: 031111-031111
- DOI
  10.1063/5.0035848
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18J22998, KAKENHI-PROJECT-20H02189
[Journal Article] Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress2021
- Author(s)
  Kobayashi Riku、Nabatame Toshihide、Onaya Takashi、Ohi Akihiko、Ikeda Naoki、Nagata Takahiro、Tsukagoshi Kazuhito、Ogura Atsushi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SC Pages: SCCM01-SCCM01
- DOI
  10.35848/1347-4065/abe685
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18J22998, KAKENHI-PROJECT-20H02189
[Journal Article] Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O32021
- Author(s)
  Kobayashi Riku、Nabatame Toshihide、Onaya Takashi、Ohi Akihiko、Ikeda Naoki、Nagata Takahiro、Tsukagoshi Kazuhito、Ogura Atsushi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 3 Pages: 030903-030903
- DOI
  10.35848/1347-4065/abde54
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18J22998, KAKENHI-PROJECT-20H02189
[Journal Article] Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition2021
- Author(s)
  Nabatame Toshihide、Maeda Erika、Inoue Mari、Hirose Masafumi、Irokawa Yoshihiro、Ohi Akihiko、Ikeda Naoki、Onaya Takashi、Shiozaki Koji、Ochi Ryota、Hashizume Tamotsu、Koide Yasuo
- Journal Title
  
  Journal of Vacuum Science &Technology A
  
  Volume: 39 Issue: 6 Pages: 062405-062405
- DOI
  10.1116/6.0001334
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02189, KAKENHI-PROJECT-21J01667
[Journal Article] Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZ1-xO2-Based Metal-Ferroelectric Semiconductor2021
- Author(s)
  Onaya Takashi、Nabatame Toshihide、Inoue Mari、Sawada Tomomi、Ota Hiroyuki、Morita Yukinori
- Journal Title
  
  ECS Transactions
  
  Volume: 104 Issue: 4 Pages: 129-135
- DOI
  10.1149/10404.0129ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02189, KAKENHI-PROJECT-21J01667
[Journal Article] Importance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures2021
- Author(s)
  Sawada Tomomi、Nabatame Toshihide、Onaya Takashi、Inoue Mari、Ohi Akihiko、Ikeda Naoki、Tsukagoshi Kazuhito
- Journal Title
  
  ECS Transactions
  
  Volume: 104 Issue: 4 Pages: 121-128
- DOI
  10.1149/10404.0121ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02189, KAKENHI-PROJECT-21J01667
[Journal Article] Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1-xO2/ZrO2 bilayer by atomic layer deposition2020
- Author(s)
  Onaya Takashi、Nabatame Toshihide、Inoue Mari、Jung Yong Chan、Hernandez-Arriaga Heber、Mohan Jaidah、Kim Harrison Sejoon、Sawamoto Naomi、Nagata Takahiro、Kim Jiyoung、Ogura Atsushi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 23 Pages: 232902-232902
- DOI
  10.1063/5.0029709
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18J22998, KAKENHI-PROJECT-20H02189
[Journal Article] Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1-XO2/ZrO2 Bi-layer2020
- Author(s)
  Onaya Takashi、Nabatame Toshihide、Inoue Mari、Jung Yong Chan、Hernandez-Arriaga Heber、Mohan Jaidah、Kim Harrison Sejoon、Sawamoto Naomi、Nagata Takahiro、Kim Jiyoung、Ogura Atsushi
- Journal Title
  
  ECS Transactions
  
  Volume: 98 Issue: 3 Pages: 63-70
- DOI
  10.1149/09803.0063ecst
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18J22998, KAKENHI-PROJECT-20H02189
[Presentation] SiO2ダミープロセスを用いたc及びm面のGaN/Al2O3/PtキャパシタのPBS特性の改善2024
- Author(s)
  生田目俊秀, 澤田朋実, 色川芳宏, 宮本真奈美, 三浦博美, 小出康夫, 塚越一仁
- Organizer
  第29回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] 強誘電体HfxZr1－xO2/TiNの界面反応に起因する分極疲労抑制メカニズムに関する考察2024
- Author(s)
  女屋崇, 生田目俊秀, 長田貴弘, 山下良之, 塚越一仁, 喜多浩之
- Organizer
  第29回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] 原子層堆積技術がリードする電子デバイス2023
- Author(s)
  生田目俊秀
- Organizer
  日本電子材料技術協会　2023年第60回秋期講演大会
- Invited
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Characteristics of GaN/High-k capacitors under positive bias stress2023
- Author(s)
  Toshihide NABATAME, Tomomi SAWADA, Yoshihiro IROKAWA, Yasuo KOIDE, Kazuhito TSUKAGOSHI
- Organizer
  244th ECS Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Impact of ALD-ZrO2 nucleation layers on leakage current properties and dielectric constant of ferroelectric HfxZr1－xO2 thin films2023
- Author(s)
  Onaya Takashi, Toshihide NABATAME, Kazuhito TSUKAGOSHI, Kita Koji
- Organizer
  36th International Microprocesses and Nanotechnology Conference (MNC 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Origin of Fatigue Properties Induced by Oxygen Vacancies Originating from Ferroelectric-HfxZr1－xO2/TiN Interface Reaction During Field Cycling2023
- Author(s)
  Takashi ONAYA, Takahiro NAGATA, Toshihide NABATAME, Yoshiyuki YAMASHITA, Kazuhito TSUKAGOSHI, Koji KITA
- Organizer
  023 International Workshop on Dielectric Thin Films For Future Electron Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] 酸化物半導体デバイスにおける原子層堆積技術の最前線.2023
- Author(s)
  生田目俊秀
- Organizer
  2023年　第70回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] 原子層堆積法で作製したInOxチャネルを用いた酸化物トランジスタの特性2023
- Author(s)
  生田目俊秀, 小林陸, 塚越一仁.
- Organizer
  第87回半導体・集積回路技術シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] TiN下部電極の表面酸化による強誘電体TiN/HfxZr1－xO2/TiNキャパシタの分極疲労の抑制2023
- Author(s)
  女屋崇, 生田目俊秀, 森田行則, 太田裕之, 右田真司, 喜多浩之, 長田貴弘, 塚越一仁, 松川貴
- Organizer
  第28回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Improvement of Fatigue Properties of Ferroelectric HfxZr1－xO2 Thin Films Using Surface Oxidized TiN Bottom-Electrode2023
- Author(s)
  Takashi ONAYA, Toshihide NABATAME, Takahiro NAGATA, Yoshiyuki YAMASHITA, Kazuhito TSUKAGOSHI, Yukinori Morita, Hiroyuki Ota, Shinji Migita, Koji Kita
- Organizer
  54th IEEE Semiconductor Interface Specialists Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Crystalline structure of Ga2O3 films on GaN(0001) and sapphire(0001) substrates after annealing process2023
- Author(s)
  Tomomi SAWADA, Toshihide NABATAME, Makoto TAKAHASHI, Kazuhiro ITO, Yoshihiro IROKAWA, Yasuo KOIDE, Kazuhito TSUKAGOSHI
- Organizer
  THERMEC 2023 International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Ga diffusion profile and electrical properties of GaN capacitors with high-k gate insulators2023
- Author(s)
  Toshihide NABATAME, Tomomi SAWADA, Yoshihiro IROKAWA, Hideyuki YASUFUKU, Mitsuaki NISHIO, Satoshi KAWADA, Yasuo KOIDE, Kazuhito TSUKAGOSHI
- Organizer
  THERMEC 2023 International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] GaN(0001)基板上でのアモルファスGa2O3膜の熱処理による高配向結晶成長2023
- Author(s)
  澤田朋実, 生田目俊秀, 高橋誠, 伊藤和博, 女屋崇, 色川芳宏, 小出康夫, 塚越一仁
- Organizer
  第28回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Improvement of PBS properties for c- and m-GaN/Al2O3/Pt capacitors using a dummy SiO2 layer2023
- Author(s)
  Toshihide NABATAME, Tomomi SAWADA, Yoshihiro IROKAWA, Manami Miyamoto, Hiromi Miura, Yasuo KOIDE, Kazuhito TSUKAGOSHI
- Organizer
  54th IEEE Semiconductor Interface Specialists Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Role of interface reaction layer between ferroelectric HfxZr1－xO2 thin film and TiN electrode on endurance properties2023
- Author(s)
  Takashi ONAYA, Toshihide NABATAME, Takahiro NAGATA, Kazuhito TSUKAGOSHI, Jiyoung Kim, Chang-Yong Nam, Esther H.R. Tsai, Koji Kita
- Organizer
  INFOS2023 23rd CONFERENCE ON INSULATING FILMS ON SEMICONDUCTORS
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Characteristics of oxide TFT using atomic-layer deposited InOx-based metal oxide channel2023
- Author(s)
  Toshihide NABATAME, Riku KOBAYASHI, Kazuhito TSUKAGOSHI
- Organizer
  2023 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] 分極疲労時の強誘電体HfxZr1－xO2/TiN界面反応に起因した酸素欠損生成の起源2023
- Author(s)
  女屋崇, 長田貴弘, 生田目俊秀, 山下良之, 塚越一仁, 森田行則, 太田裕之, 右田真司, 喜多浩之
- Organizer
  2023年　第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Improvement of characteristics for n-GaN/Al2O3/Pt capacitor with the GaN surface modified by the dummy SiO2 process2023
- Author(s)
  Toshihide NABATAME, Yoshihiro IROKAWA, Tomomi SAWADA, Manami MIYAMOTO, Hiromi MIURA, Yasuo KOIDE, Kazuhito TSUKAGOSHI
- Organizer
  2023 International Workshop on Dielectric Thin Films For Future Electron Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] 異なる酸化剤を用いた原子層堆積法により作製した強誘電体HfxZr1－xO2/TiNの構造評価2022
- Author(s)
  女屋崇, 生田目俊秀, 長田貴弘, 上田茂典, Y. C. Jung, H. Hernandez-Arriaga, J. Mohan, J. Kim, C.-Y. Nam, E. H. R. Tsai, 喜多浩之, 右田真司, 太田裕之, 森田行則
- Organizer
  2022年　第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] 強誘電性の向上へ向けたTiN/HfxZr1-xO2界面のTiOxNy層の重要性2022
- Author(s)
  女屋崇, 生田目俊秀, 長田貴弘, 上田茂典, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Jiyoung Kim, Chang-Yong Nam, Esther H. R. Tsai, 太田裕之, 森田行則
- Organizer
  第27回電子デバイス界面テクノロジー研究会. 2022
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Ferroelectric HfxZr1－xO2-based capacitors with controlled-oxidation surface of TiN bottom-electrode2022
- Author(s)
  Takashi Onaya, Toshihide Nabatame, Yukinori Morita, Hiroyuki Ota, Shinji Migita, Koji Kita, Takahiro Nagata, Kazuhito Tsukagoshi
- Organizer
  MNC 2022, 35th International Microprocesses and Nanotechnology Conference. 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Growth of Ga2O3 films on Si and GaN substrates by atomic layer deposition and post-deposition annealing2022
- Author(s)
  Toshihide Nabatame, Tomomi Sawada, Makoto Takahashi, Kazuhiro Ito, Takashi Onaya, Yoshihiro Irokawa, Yasuo Koide, Kazuhiro Tsukagoshi
- Organizer
  Visual-JW 2022 & DEJI2MA-2
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Study of gate insulator for GaN power device using atomic layer deposition2022
- Author(s)
  Toshihide Nabatame
- Organizer
  MNC 2022, 35th International Microprocesses and Nanotechnology Conference. 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Structural change of Ga2O3 film on GaN(0001) substrate by atomic layer deposition and post-deposition annealing2022
- Author(s)
  Tomomi Sawada, Toshihide Nabatame, Makoto Takahashi, Kazuhiro Ito, Takashi Onaya, Yoshihiro Irokawa, Yasuo Koide, Kazuhiro Tsukagoshi
- Organizer
  MNC 2022, 35th International Microprocesses and Nanotechnology Conference. 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] 放射光X線による低温形成したHfxZr1－xO2薄膜の直方晶相同定の検討2021
- Author(s)
  女屋崇, 生田目俊秀, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, 澤本直美, Chang-Yong Nam, Esther H. R. Tsai, 長田貴弘, Jiyoung Kim, 小椋厚志
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Study of HfO2-based High-k gate insulators for GaN power device2021
- Author(s)
  Nabatame Toshihide、Maeda Erika、Inoue Mari、Hirose Masafumi、Ochi Ryota、Sawada Tomomi、Irokawa Yoshihiro、Hashizume Tamotsu、Shiozaki Koji、Onaya Takashi、Tsukagoshi Kazuhito、Koide Yasuo
- Organizer
  240th ECS Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Study on Ferroelectric Switching Properties and Fatigue Mechanism of Low-Temperature Fabricated HfxZr1－xO2 Thin Films using Pulse Measurement2021
- Author(s)
  女屋崇, 生田目俊秀, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, 澤本直美, 長田貴弘, Jiyoung Kim, 小椋厚志
- Organizer
  第26回電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－ (EDIT26). 2021
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Investigation of HfSiOx gate insulator formed by changing fabrication process conditions for GaN power device2021
- Author(s)
  Toshihide Nabatame, Erika Maeda, Mari Inoue, Masashi Hirose, Ryota Ochi, Yasuhiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Yasuo Koide
- Organizer
  2021 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Control of ferroelectric phase formation in HfxZr1－xO2 thin films using nano-ZrO2 nucleation layer technique2021
- Author(s)
  Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura
- Organizer
  MANA International Symposium 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] mportance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures2021
- Author(s)
  Sawada Tomomi、Nabatame Toshihide、Onaya Takashi、Inoue Mari、Ohi Akihiko、Ikeda Naoki、Tsukagoshi Kazuhito
- Organizer
  240th ECS Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] TiN/HfxZr1-xO2/Si-MFS作製におけるSiO2界面層成長の抑制2021
- Author(s)
  女屋崇, 生田目俊秀, 井上万里, 澤田朋実, 太田裕之, 森田行則
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Effect of Ti Scavenging Layer on Ferroelectricity of HfxZr1-xO2 Thin Films Fabricated by Atomic Layer Deposition Using Hf/Zr Cocktail Precursor2021
- Author(s)
  Takashi Onaya, Toshihide Nabatame, Naomi, Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura
- Organizer
  AVS 21st International Conference on Atomic Layer Deposition (ALD 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1-xO2-Based Metal-Ferroelectric-Semiconductor2021
- Author(s)
  Takashi Onaya, Toshihide Nabatame, Mari Inoue, Tomomi Sawada, Hiroyuki Ota, Yukinori Morita
- Organizer
  240th ECS Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Study of HfSiOx film as gate insulator for GaN power device2021
- Author(s)
  Toshihide Nabatame, Erika Maeda, Mari Inoue, Ryota Ochi, Yasuhiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Yasuo Koide
- Organizer
  20th International Workshop on Junction Technology 2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Study of SiO2 growth mechanism between a single SiO2 and (HfO2)/(SiO2) nanolaminate formation by ALD using TDMAS and H2O gas2021
- Author(s)
  Toshihide Nabatame, Mari Inoue, Erika Maeda, Takashi Onaya, Masashi Hirose, Riku Kobayashi, Akihiko Ohi, Naoki Ikeda, Kazuhito Tsukagoshi
- Organizer
  21st International Conference on Atomic Layer Deposition. 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] HfxZr1－xO2/ZrO2積層構造による強誘電体厚膜の強誘電性の向上2020
- Author(s)
  女屋崇, 生田目俊秀, 井上万里, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S. Kim, 澤本直美, 長田貴弘, Jiyoung Kim, 小椋厚志
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Study of ALD HfO2-based high-k for GaN power devices and Ferroelectric devices2020
- Author(s)
  Toshihide Nabatame, Takashi Onaya, Erika Maeda, Masashi Hirose, Yoshihiro Irokawa, Koji Shiozaki, Yasuo Koide
- Organizer
  20th International conference on Atomic Layer Deposition (ALD/ALE 2020)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1－xO2/ZrO2 Bi-layer2020
- Author(s)
  Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison S Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-State Science 2020 (PRiME 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Air及びN2雰囲気のバイアスストレスによるアモルファスCarbon-doped In2O3TFTのトランジスタ特性2020
- Author(s)
  小林陸, 生田目俊秀, 女屋崇, 大井暁彦, 池田直樹, 長田貴弘, 塚越一仁, 小椋厚志
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] GaNパワーデバイス用HfAlOx、HfSiOx、AlSiOx、Al2O3及びHfO2 絶縁膜の特性比較2020
- Author(s)
  前田瑛里香, 生田目俊秀, 廣瀨雅史, 井上万里, 大井暁彦, 池田直樹, 塩崎宏司, 橋詰保, 清野肇
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Characteristic of flexible ReRAM with Al2O3/TiO2 active layer by ALD and PDA process at low temperature2020
- Author(s)
  Toshihide Nabatame, Tomoji Oishi, Mari Inoue, Makoto Takahashi, Kazuhiro Ito, Naoki Ikeda, Akihiko Ohi
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-State Science 2020 (PRiME 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] nfluence of Adsorbed O2 on The Gate-Bias Stress Stability of Back-Gate-Type TFT with Carbon-Doped In2O3 Channel2020
- Author(s)
  Riku Kobayashi, Toshihide Nabatame, Takahsi Onaya, Akihiko Ohi,Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsusi Ogura
- Organizer
  33rd International Microprocesses and Nanotechnology Conference 2020
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189
[Presentation] Possibility of Above 20-nm-Thick HfxZr1－xO2/ZrO2 and HfxZr1－xO2/HfO2 Bilayers for High Polarization and Breakdown Voltage2020
- Author(s)
  Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura
- Organizer
  51th IEEE Semiconductor Interface Specialists Conference. 2020
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02189

1. 池田直樹 (10415771)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
2. 大井暁彦 (20370364)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
3. 塚越一仁 (50322665)

# of Collaborated Projects: 1 results

# of Collaborated Products: 27 results
4. 喜多浩之

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

NABATAME Toshihide 生田目 俊秀

NABATAME TOSHIHIDE 生田目 俊秀

Research Projects

Research Products

Co-Researchers

Nanolaminate multifunctional film with the atomic-level oxygen vacancy control and its mechanism of giant dielectric constantPrincipal Investigator

Principal Investigator

Project Period (FY)

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Research Institution

[Journal Article] 電子デバイスへ向けた原子層堆積法で作製した金属酸化膜の研究2023

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[Journal Article] Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric HfxZr1-xO2 thin films2023

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[Journal Article] (Invited) Characteristics of GaN/High-k Capacitors Under Positive Bias Stress2023

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[Journal Article] Wake-up-free properties and high fatigue resistance of HfxZr1-xO2-based metal-ferroelectric-semiconductor using top ZrO2 nucleation layer at low thermal budget (300°C)2022

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[Journal Article] (Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device2021

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[Journal Article] Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing2021

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[Journal Article] Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis2021

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[Journal Article] Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress2021

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[Journal Article] Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O32021

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[Journal Article] Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition2021

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[Journal Article] Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZ1-xO2-Based Metal-Ferroelectric Semiconductor2021

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[Journal Article] Importance of Annealing Step on Dielectric Constant of ZrO2 Layer of MIM Capacitors with Al2O3/ZrO2 and ZrO2/Al2O3 Stack Structures2021

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[Journal Article] Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1-xO2/ZrO2 bilayer by atomic layer deposition2020

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[Journal Article] Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1-XO2/ZrO2 Bi-layer2020

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NABATAME Toshihide 生田目俊秀

NABATAME TOSHIHIDE 生田目俊秀

[Presentation] 原子層堆積法で作製したInOxチャネルを用いた酸化物トランジスタの特性2023