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TOKUDA Hirokuni  徳田 博邦

ORCIDConnect your ORCID iD *help
Researcher Number 10625932
Affiliation (based on the past Project Information) *help 2015: 福井大学, 大学院工学研究科, 特命助教
2014 – 2015: 福井大学, 工学(系)研究科(研究院), その他
2012 – 2014: 福井大学, 工学(系)研究科(研究院), 特命助教
Review Section/Research Field
Principal Investigator
Electron device/Electronic equipment
Except Principal Investigator
Electron device/Electronic equipment
Keywords
Principal Investigator
Hall effect measurement / mobility / sheet electron density / barrier height / heterostructure / AlGaN/GaN
Except Principal Investigator
ヘテロ接合 / ゲート電流 / MIS / トランジスタ … More / 表面保護膜 / パワーデバイス / 電流コラプス / 耐圧 / パッシベーション / ゲート絶縁膜 / MOSFET / HEMT / 窒化物半導体 Less
  • Research Projects

    (2 results)
  • Research Products

    (25 results)
  • Co-Researchers

    (2 People)
  •  Study on III-Nitride Based MIS-Transistors with Low-loss and High-breakdown voltage Characteristics

    • Principal Investigator
      Kuzuhara Masaaki
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Fukui
  •  Study on surface barrier height in nitride-based semiconductorsPrincipal Investigator

    • Principal Investigator
      TOKUDA Hirokuni
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Fukui

All 2015 2014 2013 2012 Other

All Journal Article Presentation

  • [Journal Article] ZrO2/Al2O3積層膜をゲート絶縁膜に用いたn-GaN MISダイオードの比誘電率と界面特性2015

    • Author(s)
      樹神 真太郎、徳田 博邦、葛原 正明
    • Journal Title

      電子情報通信学会 和文論文誌C

      Volume: Vol. J98-C Pages: 27-33

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Journal Article] Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications2015

    • Author(s)
      1.M. Kuzuhara, and H. Tokuda
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 62 Issue: 2 Pages: 405-413

    • DOI

      10.1109/ted.2014.2359055

    • NAID

      120005541053

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560399, KAKENHI-PROJECT-25420328
  • [Journal Article] Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing2015

    • Author(s)
      Joel T. Asubar, Yohei Kobayashi, Koji Yoshitsugu, Zenji Yatabe, Hirokuni Tokuda, Masahiro Horita; Yukiharu Uraoka, Tamotsu Hashizume, Masaaki Kuzuhara
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 62 Issue: 8 Pages: 2423-2428

    • DOI

      10.1109/ted.2015.2440442

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013, KAKENHI-PROJECT-25420328
  • [Journal Article] Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility2015

    • Author(s)
      Joel T. Asubar, Yoshiki Sakaida, Satoshi Yoshidai, Zenji Yatabe, Hirokuni Tokuda, Tamotsu Hashizume, Masaaki Kuzuhara
    • Journal Title

      Applied Physics Express

      Volume: 8 Issue: 11 Pages: 1110011-4

    • DOI

      10.7567/apex.8.111001

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013, KAKENHI-PROJECT-25420328
  • [Journal Article] Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3 gate dielectric stack2014

    • Author(s)
      2. M. Hatano, Y. Taniguchi, S. Kodama, H. Tokuda, and M. Kuzuhara
    • Journal Title

      Applied Physics Express

      Volume: 7 Issue: 4 Pages: 44101-44101

    • DOI

      10.7567/apex.7.044101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Journal Article] Over 3000 cm2/Vs room temperature two-dimensional electron gas mobility by annealing Ni/Al deposited on AlGaN/GaN heterostructures2014

    • Author(s)
      H. Tokuda, T. Kojima, and M. Kuzuhara
    • Journal Title

      Applied Physics Express

      Volume: 7 Issue: 4 Pages: 41001-41001

    • DOI

      10.7567/apex.7.041001

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560399
  • [Journal Article] Comparison of 2DEG density and mobility increase by annealing AlGaN/ GaN heterostructures deposited with Ti/Al, Ti/Au, V/Au, and Ni/Au2013

    • Author(s)
      T. Kojima, H. Tokuda, and M. Kuzuhara
    • Journal Title

      Phys. Status Solidi C

      Volume: 10 Issue: 11 Pages: 14051408-14051408

    • DOI

      10.1002/pssc.201300221

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560399
  • [Journal Article] Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures2012

    • Author(s)
      H. Tokuda, T. Kojima, and M. Kuzuhara
    • Journal Title

      Applied Physics Letters

      Volume: 101 Issue: 26

    • DOI

      10.1063/1.4773511

    • NAID

      120005254370

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560399
  • [Journal Article] A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al depositede AlGaN/GaN heterostructures2012

    • Author(s)
      H. Tokuda, T. Kojima, and M. Kuzuhara
    • Journal Title

      Applied Physics Letters

      Volume: 101 Issue: 8 Pages: 082111-082111

    • DOI

      10.1063/1.4748169

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560399
  • [Presentation] Current Collapse in AlGaN/GaN HEMTs with a GaN Cap Layer2015

    • Author(s)
      S. Yoshida, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      IEEE IMFEDK 2015
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2015-06-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] GaN-based Power Devices2015

    • Author(s)
      M. Kuzuhara, J. T. Asubar, and H. Tokuda
    • Organizer
      EM-NANO 2015
    • Place of Presentation
      Niigata, Japan
    • Year and Date
      2015-06-16
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Correlation between Luminescence and Current Collapse in AlGaN/GaN HEMTs2015

    • Author(s)
      S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      CS-MANTECH 2015
    • Place of Presentation
      Arizona, USA
    • Year and Date
      2015-05-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Suppressed Current Collapse in High Pressure Water Vapor Annealed AlGaN/GaN HEMTs2015

    • Author(s)
      Y. Kobayashi, J. T. Asubar, K. Yoshitsugu, H. Tokuda, M. Horita, Y. Uraoka, and M. Kuzuhara
    • Organizer
      CS-MANTECH 2015
    • Place of Presentation
      Arizona, USA
    • Year and Date
      2015-05-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Electrical characterization of stepped AlGaN/GaN heterostructures2015

    • Author(s)
      S. Kodama, J. T. Asubar, H. Tokuda, S. Nakazawa, M. Ishida, T. Ueda, and M. Kuzuhara
    • Organizer
      WOCSDICE 2015
    • Place of Presentation
      Smolenice, Slovakia
    • Year and Date
      2015-06-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Characterization and Reduction of Current Collapse in AlGaN/GaN HEMTs2015

    • Author(s)
      M. Kuzuhara, J. T. Asubar, and H. Tokuda
    • Organizer
      2015 German-Japanese-Spanish Joint Workshop
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2015-07-12
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] GaN-based HEMTs for High-voltage and Low-loss Power Applications2015

    • Author(s)
      M. Kuzuhara, J. T. Asubar, and H. Tokuda
    • Organizer
      46 th IEEE Semiconductor Interface Specialists Conf.
    • Place of Presentation
      Washington D.C., USA
    • Year and Date
      2015-12-02
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Highly Reduced Current Collapse in AlGaN/GaN HEMTs by Combined2015

    • Author(s)
      J. T. Asubar, S. Yoshida, H. Tokuda, and M. Kuzuhara
    • Organizer
      SSDM 2015
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      2015-09-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Improved current collapse in AlGaN/GaN HEMTs by O2 plasma treatment2014

    • Author(s)
      Y. Sakaida, H. Tokuda, and M. Kuzuhara
    • Organizer
      CS-MANTECH
    • Place of Presentation
      米国、コロラド
    • Year and Date
      2014-05-21
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Challenges of GaN-based transistors for power electronics applications2014

    • Author(s)
      M. Kuzuhara, and H. Tokuda
    • Organizer
      AWAD 2014
    • Place of Presentation
      金沢
    • Year and Date
      2014-07-01
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] 熱処理により導入されるAlGaN/GaN界面歪による2DEG移動度の増加2014

    • Author(s)
      川口、徳田、葛原
    • Organizer
      第75回応用物理学会秋季講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-24560399
  • [Presentation] Analysis of time dependent current collapse in AlGaN/GaN HEMTs2014

    • Author(s)
      R. Maeta, H. Tokuda, and M. Kuzuhara
    • Organizer
      ASDAM 2014
    • Place of Presentation
      スロバキア
    • Year and Date
      2014-10-22
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Challenges of GaN-based transistors for power electronics applications2014

    • Author(s)
      M. Kuzuhara, and H. Tokuda
    • Organizer
      2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Kanazawa, Japan
    • Year and Date
      2014-07-01
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560399
  • [Presentation] Enhanced 2DEG mobility by thermally induced strain between deposited metals and AlGaN/GaN heterostructures2014

    • Author(s)
      G. Kawaguchi, T. Kojima, H. Tokuda, and M. Kuzuhara
    • Organizer
      Int'l Symposium on Compound Semiconductors 2014
    • Place of Presentation
      Montpellier, France
    • Data Source
      KAKENHI-PROJECT-24560399
  • [Presentation] Interface Properties of n-GaN MIS Diodes with ZrO2/Al2O3 Laminated Films as a Gate Insulator2014

    • Author(s)
      S. Kodama, H. Tokuda, and M. Kuzuhara
    • Organizer
      IMFEDK2014
    • Place of Presentation
      京都
    • Year and Date
      2014-06-19
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Remarkable increase in 2DEG density by annealing AlGaN/GaN heterostructures deposited with Ti/Al

    • Author(s)
      T. Kojima, H. Tokuda, and M. Kuzuhara
    • Organizer
      Int'l Symposium on Compound Semiconductors 2013
    • Place of Presentation
      Kobe, Japan
    • Data Source
      KAKENHI-PROJECT-24560399
  • 1.  KUZUHARA Masaaki (20377469)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 25 results
  • 2.  ASUBAR JOEL
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 2 results

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