TOKUDA Hirokuni 徳田博邦

Researcher Number	10625932
Affiliation (based on the past Project Information) *help	2015: 福井大学, 大学院工学研究科, 特命助教 2014 – 2015: 福井大学, 工学(系)研究科(研究院), その他 2012 – 2014: 福井大学, 工学(系)研究科(研究院), 特命助教
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment Except Principal Investigator Electron device/Electronic equipment
Keywords	Principal Investigator Hall effect measurement / mobility / sheet electron density / barrier height / heterostructure / AlGaN/GaN Except Principal Investigator ヘテロ接合 / ゲート電流 / ＭＩＳ / トランジスタ … More / 表面保護膜 / パワーデバイス / 電流コラプス / 耐圧 / パッシベーション / ゲート絶縁膜 / MOSFET / HEMT / 窒化物半導体 Less

Study on III-Nitride Based MIS-Transistors with Low-loss and High-breakdown voltage Characteristics
- Principal Investigator
  
  Kuzuhara Masaaki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Fukui
Study on surface barrier height in nitride-based semiconductorsPrincipal Investigator
- Principal Investigator
  
  TOKUDA Hirokuni
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Fukui

All 2015 2014 2013 2012 Other

All Journal Article Presentation

[Journal Article] ZrO2/Al2O3積層膜をゲート絶縁膜に用いたn-GaN MISダイオードの比誘電率と界面特性2015
- Author(s)
  樹神真太郎、徳田博邦、葛原正明
- Journal Title
  
  電子情報通信学会　和文論文誌C
  
  Volume: Vol. J98-C Pages: 27-33
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420328
[Journal Article] Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications2015
- Author(s)
  1.M. Kuzuhara, and H. Tokuda
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 62 Issue: 2 Pages: 405-413
- DOI
  10.1109/ted.2014.2359055
- NAID
  120005541053
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560399, KAKENHI-PROJECT-25420328
[Journal Article] Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing2015
- Author(s)
  Joel T. Asubar, Yohei Kobayashi, Koji Yoshitsugu, Zenji Yatabe, Hirokuni Tokuda, Masahiro Horita; Yukiharu Uraoka, Tamotsu Hashizume, Masaaki Kuzuhara
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 62 Issue: 8 Pages: 2423-2428
- DOI
  10.1109/ted.2015.2440442
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K06013, KAKENHI-PROJECT-25420328
[Journal Article] Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility2015
- Author(s)
  Joel T. Asubar, Yoshiki Sakaida, Satoshi Yoshidai, Zenji Yatabe, Hirokuni Tokuda, Tamotsu Hashizume, Masaaki Kuzuhara
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 11 Pages: 1110011-4
- DOI
  10.7567/apex.8.111001
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K06013, KAKENHI-PROJECT-25420328
[Journal Article] Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3 gate dielectric stack2014
- Author(s)
  2. M. Hatano, Y. Taniguchi, S. Kodama, H. Tokuda, and M. Kuzuhara
- Journal Title
  
  Applied Physics Express
  
  Volume: 7 Issue: 4 Pages: 44101-44101
- DOI
  10.7567/apex.7.044101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420328
[Journal Article] Over 3000 cm2/Vs room temperature two-dimensional electron gas mobility by annealing Ni/Al deposited on AlGaN/GaN heterostructures2014
- Author(s)
  H. Tokuda, T. Kojima, and M. Kuzuhara
- Journal Title
  
  Applied Physics Express
  
  Volume: 7 Issue: 4 Pages: 41001-41001
- DOI
  10.7567/apex.7.041001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560399
[Journal Article] Comparison of 2DEG density and mobility increase by annealing AlGaN/ GaN heterostructures deposited with Ti/Al, Ti/Au, V/Au, and Ni/Au2013
- Author(s)
  T. Kojima, H. Tokuda, and M. Kuzuhara
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: 10 Issue: 11 Pages: 14051408-14051408
- DOI
  10.1002/pssc.201300221
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560399
[Journal Article] Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures2012
- Author(s)
  H. Tokuda, T. Kojima, and M. Kuzuhara
- Journal Title
  
  Applied Physics Letters
  
  Volume: 101 Issue: 26
- DOI
  10.1063/1.4773511
- NAID
  120005254370
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560399
[Journal Article] A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al depositede AlGaN/GaN heterostructures2012
- Author(s)
  H. Tokuda, T. Kojima, and M. Kuzuhara
- Journal Title
  
  Applied Physics Letters
  
  Volume: 101 Issue: 8 Pages: 082111-082111
- DOI
  10.1063/1.4748169
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560399
[Presentation] Current Collapse in AlGaN/GaN HEMTs with a GaN Cap Layer2015
- Author(s)
  S. Yoshida, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
- Organizer
  IEEE IMFEDK 2015
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2015-06-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420328
[Presentation] GaN-based Power Devices2015
- Author(s)
  M. Kuzuhara, J. T. Asubar, and H. Tokuda
- Organizer
  EM-NANO 2015
- Place of Presentation
  Niigata, Japan
- Year and Date
  2015-06-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420328
[Presentation] Correlation between Luminescence and Current Collapse in AlGaN/GaN HEMTs2015
- Author(s)
  S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
- Organizer
  CS-MANTECH 2015
- Place of Presentation
  Arizona, USA
- Year and Date
  2015-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420328
[Presentation] Suppressed Current Collapse in High Pressure Water Vapor Annealed AlGaN/GaN HEMTs2015
- Author(s)
  Y. Kobayashi, J. T. Asubar, K. Yoshitsugu, H. Tokuda, M. Horita, Y. Uraoka, and M. Kuzuhara
- Organizer
  CS-MANTECH 2015
- Place of Presentation
  Arizona, USA
- Year and Date
  2015-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420328
[Presentation] Electrical characterization of stepped AlGaN/GaN heterostructures2015
- Author(s)
  S. Kodama, J. T. Asubar, H. Tokuda, S. Nakazawa, M. Ishida, T. Ueda, and M. Kuzuhara
- Organizer
  WOCSDICE 2015
- Place of Presentation
  Smolenice, Slovakia
- Year and Date
  2015-06-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420328
[Presentation] Characterization and Reduction of Current Collapse in AlGaN/GaN HEMTs2015
- Author(s)
  M. Kuzuhara, J. T. Asubar, and H. Tokuda
- Organizer
  2015 German-Japanese-Spanish Joint Workshop
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2015-07-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420328
[Presentation] GaN-based HEMTs for High-voltage and Low-loss Power Applications2015
- Author(s)
  M. Kuzuhara, J. T. Asubar, and H. Tokuda
- Organizer
  46 th IEEE Semiconductor Interface Specialists Conf.
- Place of Presentation
  Washington D.C., USA
- Year and Date
  2015-12-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420328
[Presentation] Highly Reduced Current Collapse in AlGaN/GaN HEMTs by Combined2015
- Author(s)
  J. T. Asubar, S. Yoshida, H. Tokuda, and M. Kuzuhara
- Organizer
  SSDM 2015
- Place of Presentation
  Sapporo, Japan
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420328
[Presentation] Improved current collapse in AlGaN/GaN HEMTs by O2 plasma treatment2014
- Author(s)
  Y. Sakaida, H. Tokuda, and M. Kuzuhara
- Organizer
  CS-MANTECH
- Place of Presentation
  米国、コロラド
- Year and Date
  2014-05-21
- Data Source
  KAKENHI-PROJECT-25420328
[Presentation] Challenges of GaN-based transistors for power electronics applications2014
- Author(s)
  M. Kuzuhara, and H. Tokuda
- Organizer
  AWAD 2014
- Place of Presentation
  金沢
- Year and Date
  2014-07-01
- Invited
- Data Source
  KAKENHI-PROJECT-25420328
[Presentation] 熱処理により導入されるAlGaN/GaN界面歪による2DEG移動度の増加2014
- Author(s)
  川口、徳田、葛原
- Organizer
  第75回応用物理学会秋季講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-24560399
[Presentation] Analysis of time dependent current collapse in AlGaN/GaN HEMTs2014
- Author(s)
  R. Maeta, H. Tokuda, and M. Kuzuhara
- Organizer
  ASDAM 2014
- Place of Presentation
  スロバキア
- Year and Date
  2014-10-22
- Data Source
  KAKENHI-PROJECT-25420328
[Presentation] Challenges of GaN-based transistors for power electronics applications2014
- Author(s)
  M. Kuzuhara, and H. Tokuda
- Organizer
  2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Kanazawa, Japan
- Year and Date
  2014-07-01
- Invited
- Data Source
  KAKENHI-PROJECT-24560399
[Presentation] Enhanced 2DEG mobility by thermally induced strain between deposited metals and AlGaN/GaN heterostructures2014
- Author(s)
  G. Kawaguchi, T. Kojima, H. Tokuda, and M. Kuzuhara
- Organizer
  Int'l Symposium on Compound Semiconductors 2014
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PROJECT-24560399
[Presentation] Interface Properties of n-GaN MIS Diodes with ZrO2/Al2O3 Laminated Films as a Gate Insulator2014
- Author(s)
  S. Kodama, H. Tokuda, and M. Kuzuhara
- Organizer
  IMFEDK2014
- Place of Presentation
  京都
- Year and Date
  2014-06-19
- Data Source
  KAKENHI-PROJECT-25420328
[Presentation] Remarkable increase in 2DEG density by annealing AlGaN/GaN heterostructures deposited with Ti/Al
- Author(s)
  T. Kojima, H. Tokuda, and M. Kuzuhara
- Organizer
  Int'l Symposium on Compound Semiconductors 2013
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-24560399

1. KUZUHARA Masaaki (20377469)

# of Collaborated Projects: 2 results

# of Collaborated Products: 25 results
2. ASUBAR JOEL

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

TOKUDA Hirokuni 徳田 博邦

Research Projects

Research Products

Co-Researchers

Study on III-Nitride Based MIS-Transistors with Low-loss and High-breakdown voltage Characteristics

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study on surface barrier height in nitride-based semiconductorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] ZrO2/Al2O3積層膜をゲート絶縁膜に用いたn-GaN MISダイオードの比誘電率と界面特性2015

Author(s)

Journal Title

Data Source

[Journal Article] Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications2015

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing2015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility2015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3 gate dielectric stack2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Over 3000 cm2/Vs room temperature two-dimensional electron gas mobility by annealing Ni/Al deposited on AlGaN/GaN heterostructures2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Comparison of 2DEG density and mobility increase by annealing AlGaN/ GaN heterostructures deposited with Ti/Al, Ti/Au, V/Au, and Ni/Au2013

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures2012

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al depositede AlGaN/GaN heterostructures2012

Author(s)

Journal Title

DOI

Data Source

[Presentation] Current Collapse in AlGaN/GaN HEMTs with a GaN Cap Layer2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] GaN-based Power Devices2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Correlation between Luminescence and Current Collapse in AlGaN/GaN HEMTs2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

TOKUDA Hirokuni 徳田博邦