Yajima Takeaki 矢嶋赳彬

Researcher Number	10644346
Other IDs
Affiliation *help	2016 – 2018 : 東京大学, 大学院工学系研究科(工学部), 助教 2015 : 東京大学, 工学(系)研究科(研究院), 助教
Review Section/Research Field	Principal Investigator Thin film/Surface and interfacial physical properties / Electrical and electronic engineering and related fields Except Principal Investigator Medium-sized Section 13:Condensed matter physics and related fields
Keywords	Principal Investigator 電子・電気材料 / 金属絶縁体転移 / 電界効果トランジスタ / 固体イオニクス / モットトランジスタ / 相転移 / 強相関エレクトロニクス / ショットキー接合 / 酸化物ヘテロ構造 / エピタキシャル界面 … More Except Principal Investigator 人工シナプス / 金属絶縁体転移 / 人工ニューロン / SrTiO3 / VO2 Less

Concerted research in physics of anomalous phenomena around metal-insulator transition and development of neuromorphic devicesOngoing
- Principal Investigator
  
  井上公
- Project Period (FY)
  2018 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 13:Condensed matter physics and related fields
- Research Institution
  National Institute of Advanced Industrial Science and Technology
ゲート誘起相転移を用いた低電圧トランジスタのデバイス物理構築Principal InvestigatorOngoing
- Principal Investigator
  
  矢嶋赳彬
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  The University of Tokyo
酸化物中のプロトン制御による人工知能用アナログ電子デバイスの研究Principal InvestigatorOngoing
- Principal Investigator
  
  矢嶋赳彬
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Challenging Research (Exploratory)
- Research Field
  
  Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo
Operation mechanism of VO2-channel Mott transistors and their low-voltage operationPrincipal Investigator
- Principal Investigator
  
  Yajima Takeaki
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  The University of Tokyo

All 2017 2016 2015

All Journal Article Presentation

[Journal Article] Identifying the Collective Length in VO2 Metal/Insulator Transistions2017
- Author(s)
  T. Yajima, T. Nishimura, A. Toriumi
- Journal Title
  
  Small
  
  Volume : 13
- DOI
  10.1002/smll.201603113
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K17466
[Journal Article] Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics.2015
- Author(s)
  T. Yajima, T. Nishimura, A. Toriumi
- Journal Title
  
  Nature Commun.
  
  Volume : 6 Pages : 10104-10104
- DOI
  10.1038/ncomms10104
- Peer Reviewed / Open Access / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K17466
[Journal Article] Drastic change in electronic domain structures via strong elastic coupling in VO2 films.2015
- Author(s)
  T. Yajima, Y. Ninomiya, T. Nishimura, A. Toriumi
- Journal Title
  
  Phys. Rev. B
  
  Volume : 91 Pages : 205102-205102
- DOI
  10.1103/PhysRevB.91.205102
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Time Response Characteristics of the VO2 Mott Transistor.2016
- Author(s)
  T. Yajima
- Organizer
  JSPS MEETING 2016 (C2C Program)
- Place of Presentation
  ユーリッヒ研究センタ（Julich, Germany）
- Int'l Joint Research / Invited
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Collective gate modulation in Mott transistors with ultrathin VO2 channels.2016
- Author(s)
  T. Yajima
- Organizer
  2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  函館国際ホテル（函館市・北海道）
- Int'l Joint Research / Invited
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Time Response to The Gate Voltagein Strongly Correlated TransistorsUsing Epitaxial VO2/TiO2 Stacks2016
- Author(s)
  T. Yajima
- Organizer
  Workshop on Oxide Electronics 23
- Place of Presentation
  Nanjing International Conference Hotel（南京・中国）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Time Response of Gate-Controlled Metal-Insulator Transitions in Ultrathin VO2 Channels2016
- Author(s)
  T. Yajima
- Organizer
  SSDM2016
- Place of Presentation
  つくば国際会議場（つくば・茨城県）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] VO2薄膜への局所的な不純物ドープによる独立フォノンの形成2016
- Author(s)
  T. Yajima
- Organizer
  応用物理学会2016 秋季講演会
- Place of Presentation
  朱鷺メッセ（新潟・新潟県）
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Critical Role of Domain Boundary Parallel to the Interface in the Operation of VO2 Mott Transistors2015
- Author(s)
  Takeaki Yajima, Tomonori Nishimura, Akira Toriumi
- Organizer
  2015 MRS Spring Meeting
- Place of Presentation
  San Francisco（USA）
- Year and Date
  2015-04-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Solid-State Operation of Mott Transistors with Ultra-Thin VO2 Channels2015
- Author(s)
  T. Yajima, T. Nishimura, A, Toriumi
- Organizer
  SSDM 2015
- Place of Presentation
  札幌コンベンションセンター（北海道・札幌市）
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Interaction between 2D electrons and 3D metal-insulator transition in VO2-channel transistors2015
- Author(s)
  T. Yajima, T. Nishimura, and A. Toriumi
- Organizer
  ep2ds-21
- Place of Presentation
  仙台国際センター（宮城県・仙台市）
- Year and Date
  2015-07-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Interaction between 2D Electrons and 3D Metal-Insulator Transitions in VO2-Channel Transistors.2015
- Author(s)
  Takeaki Yajima
- Organizer
  CEMS Topical Meeting on Oxide Interfaces
- Place of Presentation
  理化学研究所（埼玉県・和光市）
- Year and Date
  2015-11-05
- Int'l Joint Research / Invited
- Data Source
  KAKENHI-PROJECT-15K17466

1. 井上公 (00356502)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
2. 山田浩之 (00415762)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
3. 渋谷圭介 (00564949)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
4. 浅沼周太郎 (30409635)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
5. 押川正毅 (50262043)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
6. 白川直樹 (60357241)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
7. 富岡泰秀 (60357572)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
8. Stoliar Pablo (40824545)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results

Yajima Takeaki 矢嶋 赳彬

Research Projects

Research Products

Co-Researchers

Concerted research in physics of anomalous phenomena around metal-insulator transition and development of neuromorphic devicesOngoing

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

ゲート誘起相転移を用いた低電圧トランジスタのデバイス物理構築Principal InvestigatorOngoing

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

酸化物中のプロトン制御による人工知能用アナログ電子デバイスの研究Principal InvestigatorOngoing

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Operation mechanism of VO2-channel Mott transistors and their low-voltage operationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Identifying the Collective Length in VO2 Metal/Insulator Transistions2017

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics.2015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Drastic change in electronic domain structures via strong elastic coupling in VO2 films.2015

Author(s)

Journal Title

DOI

Data Source

[Presentation] Time Response Characteristics of the VO2 Mott Transistor.2016

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Collective gate modulation in Mott transistors with ultrathin VO2 channels.2016

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Time Response to The Gate Voltagein Strongly Correlated TransistorsUsing Epitaxial VO2/TiO2 Stacks2016

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Time Response of Gate-Controlled Metal-Insulator Transitions in Ultrathin VO2 Channels2016

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] VO2薄膜への局所的な不純物ドープによる独立フォノンの形成2016

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Critical Role of Domain Boundary Parallel to the Interface in the Operation of VO2 Mott Transistors2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Solid-State Operation of Mott Transistors with Ultra-Thin VO2 Channels2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

Yajima Takeaki 矢嶋赳彬