YAJIMA TAKEAKI 矢嶋赳彬

… Alternative Names

Researcher Number	10644346
Other IDs
Affiliation (Current)	2022: 九州大学, システム情報科学研究院, 准教授
Affiliation (based on the past Project Information) *help	2020 – 2021: 九州大学, システム情報科学研究院, 准教授 2016 – 2020: 東京大学, 大学院工学系研究科(工学部), 助教 2015: 東京大学, 工学(系)研究科(研究院), 助教
Review Section/Research Field	Principal Investigator Thin film/Surface and interfacial physical properties / Electrical and electronic engineering and related fields / Basic Section 29020:Thin film/surface and interfacial physical properties-related / Medium-sized Section 29:Applied condensed matter physics and related fields Except Principal Investigator Medium-sized Section 13:Condensed matter physics and related fields
Keywords	Principal Investigator 酸化バナジウム / 金属絶縁体転移 / 相転移 / 電界効果トランジスタ / モットトランジスタ / モット転移 / プロトン / 酸化チタン / 電子・電気材料 / スティープスロープ … More Except Principal Investigator 量子臨界点 / 超伝導 / SrTiO3 / ニューロモルフィック / レザバー / 強誘電金属 / 強誘電体 / 強誘電量子臨界点 / リーク付き積分 / ニューラルネットワーク / 電界効果トランジスタ / アトラクタ / チタン酸ストロンチウム / 近藤効果 / 人工ニューロン / 人工シナプス / 強誘電 / 金属絶縁体転移 / VO2 Less

Study on the rate limiting process of the gate-induced phase transition and the speed limit of the phase transition transistorPrincipal Investigator
- Principal Investigator
  
  矢嶋赳彬
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Kyushu University
  The University of Tokyo
Study on 0.1V electronics using proton in solidsPrincipal Investigator
- Principal Investigator
  
  矢嶋赳彬
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Challenging Research (Pioneering)
- Review Section
  
  Medium-sized Section 29:Applied condensed matter physics and related fields
- Research Institution
  Kyushu University
Concerted research in physics of anomalous phenomena around metal-insulator transition and development of neuromorphic devices
- Principal Investigator
  
  井上公
- Project Period (FY)
  2018 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 13:Condensed matter physics and related fields
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Analog devices based on proton control in oxides for future AI hardwarePrincipal Investigator
- Principal Investigator
  
  Yajima Takeaki
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Research Field
  
  Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo
Device physics of low-voltage transistors using gate-induced phase transitionsPrincipal Investigator
- Principal Investigator
  
  Yajima Takeaki
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  The University of Tokyo
Operation mechanism of VO2-channel Mott transistors and their low-voltage operationPrincipal Investigator
- Principal Investigator
  
  Yajima Takeaki
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  The University of Tokyo

All 2020 2019 2018 2017 2016 2015

All Journal Article Presentation Patent

[Journal Article] 金属絶縁体転移材料を利用した回路技術の研究2020
- Author(s)
  矢嶋赳彬
- Journal Title
  
  電子情報通信学会和文論文誌C
  
  Volume: J103-C Pages: 420-427
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03686
[Journal Article] Modulation of VO2 Metal-Insulator Transition by Ferroelectric HfO 2 Gate Insulator2020
- Author(s)
  Yajima Takeaki、Nishimura Tomonori、Tanaka Takahisa、Uchida Ken、Toriumi Akira
- Journal Title
  
  Advanced Electronic Materials
  
  Volume: Early view Pages: 1901356-1901356
- DOI
  10.1002/aelm.201901356
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17H04812, KAKENHI-PROJECT-18H03686
[Journal Article] Regulating phase transformation kinetics via redox reaction in ferroelectric Ge-doped HfO22020
- Author(s)
  Yajima T.、Nishimura T.、Migita S.、Tanaka T.、Uchida K.、Toriumi A.
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Pages: 182902-182902
- DOI
  10.1063/5.0028620
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18H03686
[Journal Article] High-speed low-energy heat signal processing via digital-compatible binary switch with metal-insulator transitions2019
- Author(s)
  Yajima T.、Tanaka T.、Samata Y.、Uchida K.、Toriumi A.
- Journal Title
  
  IEDM
  
  Volume: 19 Pages: 903-906
- DOI
  10.1109/iedm19573.2019.8993502
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H04812
[Journal Article] Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique2018
- Author(s)
  Yajima T.、Oike G.、Yamaguchi S.、Miyoshi S.、Nishimura T.、Toriumi A.
- Journal Title
  
  AIP Advances
  
  Volume: 8 Pages: 115133-115133
- DOI
  10.1063/1.5055302
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K18232, KAKENHI-PROJECT-18H03686, KAKENHI-PROJECT-17K18869, KAKENHI-PROJECT-17H01317
[Journal Article] Analog Spike Processing with High Scalability and Low Energy Consumption Using Thermal Degree of Freedom in Phase Transition Materials2018
- Author(s)
  Yajima T.、Nishimura T.、Toriumi A.
- Journal Title
  
  VLSI Technology
  
  Volume: 2018 Pages: 27-28
- DOI
  10.1109/vlsit.2018.8510649
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03686
[Journal Article] Inhomogeneous barrier heights at dipole-controlled SrRuO3/Nb:SrTiO3 Schottky junctions2018
- Author(s)
  Yajima T.、Minohara M.、Bell C.、Hwang H. Y.、Hikita Y.
- Journal Title
  
  Applied Physics Letters
  
  Volume: 113 Pages: 221603-221603
- DOI
  10.1063/1.5052712
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04946, KAKENHI-PROJECT-18H03686
[Journal Article] Identifying the Collective Length in VO2 Metal/Insulator Transistions2017
- Author(s)
  T. Yajima, T. Nishimura, A. Toriumi
- Journal Title
  
  Small
  
  Volume: 13
- DOI
  10.1002/smll.201603113
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K17466
[Journal Article] Drastic change in electronic domain structures via strong elastic coupling in VO2 films.2015
- Author(s)
  T. Yajima, Y. Ninomiya, T. Nishimura, A. Toriumi
- Journal Title
  
  Phys. Rev. B
  
  Volume: 91 Pages: 205102-205102
- DOI
  10.1103/physrevb.91.205102
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K17466
[Journal Article] Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics.2015
- Author(s)
  T. Yajima, T. Nishimura, A. Toriumi
- Journal Title
  
  Nature Commun.
  
  Volume: 6 Pages: 10104-10104
- DOI
  10.1038/ncomms10104
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K17466
[Patent] 半導体デバイス2019
- Inventor(s)
  矢嶋赳彬, 田中貴久, 内田建, 鳥海明
- Industrial Property Rights Holder
  矢嶋赳彬, 田中貴久, 内田建, 鳥海明
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2019-204806
- Filing Date
  2019
- Data Source
  KAKENHI-PROJECT-17H04812
[Presentation] VO2 Mott Transistors for Low-Voltage ON/OFF Switching.2020
- Author(s)
  Takeaki Yajima
- Organizer
  21th International Symposium on Eco-materials Processing and Design
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04812
[Presentation] VO2 Mott Transistors for Low-Voltage ON/OFF Switching2020
- Author(s)
  Takeaki Yajima
- Organizer
  21th International Symposium on Eco-materials Processing and Design
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04812
[Presentation] Operation Principles of VO2 Mott Transistor: Local Electrostatic Modulation and Global Avalanche Effect2020
- Author(s)
  T. Yajima, T. Tanaka, K. Uchida, A. Toriumi
- Organizer
  International Coference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03686
[Presentation] Impact of Scaling the VO2-Channel Mott Transistor below Material Correlation Length2019
- Author(s)
  Takeaki Yajima
- Organizer
  SSDM2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04812
[Presentation] High-speed low-energy heat signal processing via digital-compatible binary switch with metal-insulator transitions2019
- Author(s)
  Takeaki Yajima
- Organizer
  IEDM2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04812
[Presentation] 材料特性を利用したニューロモルフィック素子の設計2019
- Author(s)
  Takeaki Yajima
- Organizer
  電気情報通信学会ソサイエティ大会
- Invited
- Data Source
  KAKENHI-PROJECT-18H03686
[Presentation] 超急峻スイッチングを可能にするVO2モットトランジスタの特殊な動作モード2019
- Author(s)
  矢嶋赳彬
- Organizer
  SDM研究会
- Data Source
  KAKENHI-PROJECT-17H04812
[Presentation] VO2モットトランジスタにおける微細化の影響2019
- Author(s)
  矢嶋赳彬
- Organizer
  秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-17H04812
[Presentation] Designing Neuron Functionality Based on Phase Transition Materials2019
- Author(s)
  Takeaki Yajima
- Organizer
  Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03686
[Presentation] Integrate-and-Fire of Input Spike Signals with High Scalability and Low Energy Consumption Using VO2 Metal-Insulator Transition.2018
- Author(s)
  T. Yajima, T. Nishimura, and A. Toriumi
- Organizer
  2018 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03686
[Presentation] 相転移材料の熱自由度を利用した低消費電力アナログスパイク処理2018
- Author(s)
  矢嶋赳彬
- Organizer
  シリコンテクノロジー分科会第210回研究集会
- Invited
- Data Source
  KAKENHI-PROJECT-18H03686
[Presentation] Analog Spike Processing with High Scalability and Low Energy Consumption Using Thermal Degree of Freedom in Phase Transition Materials2018
- Author(s)
  T. Yajima, T. Nishimura, A. Toriumi
- Organizer
  2018 Symposia on VLSI Technology and Circuits
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03686
[Presentation] 強誘電性HfO2ゲート３端子素子によるVO2電気伝導度の変調2018
- Author(s)
  矢嶋赳彬、西村知紀、鳥海明
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03686
[Presentation] 相転移材料によって開かれる新しい電子デバイスと回路の可能性2017
- Author(s)
  矢嶋赳彬
- Organizer
  電気学会/ナノエレクトロニクス新機能創出・集積化技術専門員会
- Invited
- Data Source
  KAKENHI-PROJECT-17H04812
[Presentation] 相転移現象によって開かれる新しい電子デバイスと回路の可能性2017
- Author(s)
  矢嶋赳彬
- Organizer
  第6回酸化物研究の新機軸に向けた学際討論会
- Invited
- Data Source
  KAKENHI-PROJECT-17H04812
[Presentation] Hydrogenation of The Buried Interface as A Stable Nano-Doping Technique to Oxide Semiconductors2017
- Author(s)
  Takeaki Yajima
- Organizer
  MRS Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K18869
[Presentation] VO2薄膜への局所的な不純物ドープによる独立フォノンの形成2016
- Author(s)
  T. Yajima
- Organizer
  応用物理学会2016 秋季講演会
- Place of Presentation
  朱鷺メッセ（新潟・新潟県）
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Collective gate modulation in Mott transistors with ultrathin VO2 channels.2016
- Author(s)
  T. Yajima
- Organizer
  2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  函館国際ホテル（函館市・北海道）
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Time Response Characteristics of the VO2 Mott Transistor.2016
- Author(s)
  T. Yajima
- Organizer
  JSPS MEETING 2016 (C2C Program)
- Place of Presentation
  ユーリッヒ研究センタ（Julich, Germany）
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Time Response to The Gate Voltagein Strongly Correlated TransistorsUsing Epitaxial VO2/TiO2 Stacks2016
- Author(s)
  T. Yajima
- Organizer
  Workshop on Oxide Electronics 23
- Place of Presentation
  Nanjing International Conference Hotel（南京・中国）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Time Response of Gate-Controlled Metal-Insulator Transitions in Ultrathin VO2 Channels2016
- Author(s)
  T. Yajima
- Organizer
  SSDM2016
- Place of Presentation
  つくば国際会議場（つくば・茨城県）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Critical Role of Domain Boundary Parallel to the Interface in the Operation of VO2 Mott Transistors2015
- Author(s)
  Takeaki Yajima, Tomonori Nishimura, Akira Toriumi
- Organizer
  2015 MRS Spring Meeting
- Place of Presentation
  San Francisco（USA）
- Year and Date
  2015-04-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Interaction between 2D Electrons and 3D Metal-Insulator Transitions in VO2-Channel Transistors.2015
- Author(s)
  Takeaki Yajima
- Organizer
  CEMS Topical Meeting on Oxide Interfaces
- Place of Presentation
  理化学研究所（埼玉県・和光市）
- Year and Date
  2015-11-05
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Interaction between 2D electrons and 3D metal-insulator transition in VO2-channel transistors2015
- Author(s)
  T. Yajima, T. Nishimura, and A. Toriumi
- Organizer
  ep2ds-21
- Place of Presentation
  仙台国際センター（宮城県・仙台市）
- Year and Date
  2015-07-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17466
[Presentation] Solid-State Operation of Mott Transistors with Ultra-Thin VO2 Channels2015
- Author(s)
  T. Yajima, T. Nishimura, A, Toriumi
- Organizer
  SSDM 2015
- Place of Presentation
  札幌コンベンションセンター（北海道・札幌市）
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17466

1. 井上公 (00356502)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
2. 山田浩之 (00415762)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. 渋谷圭介 (00564949)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 浅沼周太郎 (30409635)

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5. 押川正毅 (50262043)

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6. 白川直樹 (60357241)

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7. 富岡泰秀 (60357572)

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8. Stoliar Pablo (40824545)

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9. MIYOSHI Shogo

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10. 山口周

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11. 簑原誠人

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YAJIMA TAKEAKI 矢嶋 赳彬

Yajima Takeaki 矢嶋 赳彬

Research Projects

Research Products

Co-Researchers

Study on the rate limiting process of the gate-induced phase transition and the speed limit of the phase transition transistorPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study on 0.1V electronics using proton in solidsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Concerted research in physics of anomalous phenomena around metal-insulator transition and development of neuromorphic devices

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Analog devices based on proton control in oxides for future AI hardwarePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Device physics of low-voltage transistors using gate-induced phase transitionsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Operation mechanism of VO2-channel Mott transistors and their low-voltage operationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] 金属絶縁体転移材料を利用した回路技術の研究2020

Author(s)

Journal Title

Data Source

[Journal Article] Modulation of VO2 Metal-Insulator Transition by Ferroelectric HfO 2 Gate Insulator2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Regulating phase transformation kinetics via redox reaction in ferroelectric Ge-doped HfO22020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] High-speed low-energy heat signal processing via digital-compatible binary switch with metal-insulator transitions2019

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Analog Spike Processing with High Scalability and Low Energy Consumption Using Thermal Degree of Freedom in Phase Transition Materials2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Inhomogeneous barrier heights at dipole-controlled SrRuO3/Nb:SrTiO3 Schottky junctions2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Identifying the Collective Length in VO2 Metal/Insulator Transistions2017

Author(s)

Journal Title

DOI

Data Source

YAJIMA TAKEAKI 矢嶋赳彬

Yajima Takeaki 矢嶋赳彬