OKADA NAOYA 岡田直也

Researcher Number	10717234
Other IDs	https://orcid.org/0000-0002-0512-8324
Affiliation (Current)	2024: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Affiliation (based on the past Project Information) *help	2018 – 2024: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Basic Section 28020:Nanostructural physics-related
Keywords	Principal Investigator シリコン / 遷移金属内包シリコンクラスター / クラスター / トランジスタ / シリサイド / CVD / 仕事関数 / MOS / 二次元 / ヘテロ接合 … More / TMDC / 二次元物質 / 磁性半導体 / 磁性 / エピタキシャル成長 / 遷移金属 / スピン / デバイス / Cu / 半導体 / 拡散バリア / 金属接合 / 拡散 / 信頼性 Less

二次元物質とシリコンを用いたヘテロエレクトロニクスの創出Principal Investigator
- Principal Investigator
  
  岡田直也
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Formation of single-crystal Si spin glass with a single W atom as a magnetic dopant and elucidation of its magnetic propertiesPrincipal Investigator
- Principal Investigator
  
  Okada Naoya
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 28020:Nanostructural physics-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Elucidation of Cu diffusion barrier mechanism and control of Cu diffusion coefficient in W-atom-encapsulated Si cage clusters filmPrincipal Investigator
- Principal Investigator
  
  OKADA NAOYA
- Project Period (FY)
  2018 – 2019
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology

All 2024 2023 2019 2018

All Journal Article Presentation Patent

[Journal Article] Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions2024
- Author(s)
  Okada Naoya、Chang Wen Hsin、Hatayama Shogo、Saito Yuta、Irisawa Toshifumi
- Journal Title
  
  Applied Physics Express
  
  Volume: 17 Issue: 3 Pages: 036503-036503
- DOI
  10.35848/1882-0786/ad2d75
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K26151
[Journal Article] Fermi-level depinning in Mo/Si junctions by insertion of amorphous Si-rich Mo silicide film formed via gas-phase reactions of MoF6 with SiH42024
- Author(s)
  Okada Naoya、Uchida Noriyuki、Kanayama Toshihiko
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 2 Pages: 02SP28-02SP28
- DOI
  10.35848/1347-4065/ad0c93
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K26151
[Journal Article] Gas-phase reactions of WF6 with SiH4 for deposition of WSin films free from powder formation2019
- Author(s)
  Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SB Pages: SBBA09-SBBA09
- DOI
  10.7567/1347-4065/ab01d4
- NAID
  210000135447
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K13794
[Journal Article] Cluster-Preforming-Deposited Si-rich W Silicide: A New Contact Material for Advanced CMOS2019
- Author(s)
  Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
- Journal Title
  
  ECS Transactions
  
  Volume: 89 Issue: 3 Pages: 155-164
- DOI
  10.1149/08903.0155ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K13794
[Patent] 半導体装置2023
- Inventor(s)
  岡田直也、張文馨、齊藤雄太、畑山祥吾、入沢寿史
- Industrial Property Rights Holder
  国立研究開発法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2023-125852
- Filing Date
  2023
- Data Source
  KAKENHI-PROJECT-23K26151
[Patent] 半導体装置及びその製造方法2018
- Inventor(s)
  岡田直也、内田紀行、金山敏彦
- Industrial Property Rights Holder
  産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2018
- Overseas
- Data Source
  KAKENHI-PROJECT-18K13794
[Patent] 導電性積層体及び電子素子2018
- Inventor(s)
  岡田直也、内田紀行、小川真一、金山敏彦
- Industrial Property Rights Holder
  産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2018
- Overseas
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] Amorphous Si-rich Mo silicide films for advanced source/drain contacts2023
- Author(s)
  Okada Naoya、Uchida Noriyuki、Kanayama Toshihiko
- Organizer
  SSDM2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26151
[Presentation] アモルファスMoSin挿入層によるMo/n-Si接合のショットキー障壁高さ低減2023
- Author(s)
  岡田直也、内田紀行、金山敏彦
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26151
[Presentation] Low-barrier heterojunction Sb2Te3/n-Si for source/drain contacts2023
- Author(s)
  Okada Naoya、Chang Wen Hsin、Hatayama Shogo、Saito Yuta、Irisawa Toshifumi
- Organizer
  2023 MRS Fall Meeting & Exhibit
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26151
[Presentation] Cu Barrier Properties of Cluster-Preforming-Deposited Amorphous WSin Films Depending on Composition n2019
- Author(s)
  Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
- Organizer
  International interconnect technology conference (IEEE-IITC) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] New Contact Material for Advanced CMOS: Cluster-Preforming-Deposited Amorphous Si-rich W Silicide Film2019
- Author(s)
  Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
- Organizer
  235th ECS Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] Cluster-Preforming-Deposited Si-rich W Silicide: A New Contact Material in CMOS for Edge AI Systems2019
- Author(s)
  Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
- Organizer
  JST-MOST Joint Workshop
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] アモルファスWSin膜の実効仕事関数2019
- Author(s)
  岡田直也、内田紀行、小川真一、金山敏彦
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] 微細CMOS向け新コンタクト材料：クラスター気相合成法で形成したSiリッチWシリサイド膜2019
- Author(s)
  岡田直也
- Organizer
  Siテクノロジ分科会配線研究会
- Invited
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] A New Cobalt Contact Structure Using Amorphous Si-Rich W Silicide Films2019
- Author(s)
  Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
- Organizer
  IEEE-IITC
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] クラスター気相合成法で形成したSiリッチWシリサイド薄膜による微細CMOS向けコンタクト形成技術2018
- Author(s)
  岡田直也
- Organizer
  電気学会「次世代化合物半導体デバイスの機能と応用調査専門委員会」
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] アモルファスWSinバリア膜とCuの反応性：組成比n依存性2018
- Author(s)
  岡田直也、内田紀行、小川真一、金山敏彦
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] Identification of different gas-phase reaction modes of WF6 with SiH4 for deposition of WSin films: powder formation and WSin cluster synthesis2018
- Author(s)
  Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
- Organizer
  International Conference on Solid State Devices and Materials (SSDM) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] 微細CMOS向け新コンタクト材料：クラスター気相合成法で形成したWSin (n=12)膜2018
- Author(s)
  岡田直也
- Organizer
  第８２回半導体集積回路技術シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-18K13794

1. 内田紀行 (60400636)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

OKADA NAOYA 岡田 直也

Research Projects

Research Products

Co-Researchers

二次元物質とシリコンを用いたヘテロエレクトロニクスの創出Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Formation of single-crystal Si spin glass with a single W atom as a magnetic dopant and elucidation of its magnetic propertiesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Elucidation of Cu diffusion barrier mechanism and control of Cu diffusion coefficient in W-atom-encapsulated Si cage clusters filmPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Fermi-level depinning in Mo/Si junctions by insertion of amorphous Si-rich Mo silicide film formed via gas-phase reactions of MoF6 with SiH42024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Gas-phase reactions of WF6 with SiH4 for deposition of WSin films free from powder formation2019

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Cluster-Preforming-Deposited Si-rich W Silicide: A New Contact Material for Advanced CMOS2019

Author(s)

Journal Title

DOI

Data Source

[Patent] 半導体装置2023

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Industrial Property Number

Filing Date

Data Source

[Patent] 半導体装置及びその製造方法2018

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Filing Date

Data Source

[Patent] 導電性積層体及び電子素子2018

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Filing Date

Data Source

[Presentation] Amorphous Si-rich Mo silicide films for advanced source/drain contacts2023

Author(s)

Organizer

Data Source

[Presentation] アモルファスMoSin挿入層によるMo/n-Si接合のショットキー障壁高さ低減2023

Author(s)

Organizer

Data Source

[Presentation] Low-barrier heterojunction Sb2Te3/n-Si for source/drain contacts2023

Author(s)

Organizer

Data Source

[Presentation] Cu Barrier Properties of Cluster-Preforming-Deposited Amorphous WSin Films Depending on Composition n2019

Author(s)

Organizer

Data Source

[Presentation] New Contact Material for Advanced CMOS: Cluster-Preforming-Deposited Amorphous Si-rich W Silicide Film2019

Author(s)

OKADA NAOYA 岡田直也