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OKADA NAOYA  岡田 直也

Researcher Number 10717234
Other IDs
  • ORCIDhttps://orcid.org/0000-0002-0512-8324
Affiliation (Current) 2023: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Affiliation (based on the past Project Information) *help 2018 – 2023: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Review Section/Research Field
Principal Investigator
Basic Section 21050:Electric and electronic materials-related / Basic Section 28020:Nanostructural physics-related
Keywords
Principal Investigator
遷移金属内包シリコンクラスター / クラスター / トランジスタ / シリサイド / ヘテロ接合 / TMDC / 二次元物質 / シリコン / 磁性 / 磁性半導体 … More / 遷移金属 / スピン / デバイス / Cu / 半導体 / 拡散バリア / 金属接合 / 拡散 / 信頼性 / CVD Less
  • Research Projects

    (3 results)
  • Research Products

    (14 results)
  • Co-Researchers

    (1 People)
  •  二次元物質とシリコンを用いたヘテロエレクトロニクスの創出Principal Investigator

    • Principal Investigator
      岡田 直也
    • Project Period (FY)
      2023 – 2025
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
  •  単一W原子を磁性ドーパントとする単結晶Siスピングラスの創出と磁気特性の解明Principal Investigator

    • Principal Investigator
      岡田 直也
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 28020:Nanostructural physics-related
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
  •  Elucidation of Cu diffusion barrier mechanism and control of Cu diffusion coefficient in W-atom-encapsulated Si cage clusters filmPrincipal Investigator

    • Principal Investigator
      OKADA NAOYA
    • Project Period (FY)
      2018 – 2019
    • Research Category
      Grant-in-Aid for Early-Career Scientists
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      National Institute of Advanced Industrial Science and Technology

All 2019 2018

All Journal Article Presentation Patent

  • [Journal Article] Gas-phase reactions of WF6 with SiH4 for deposition of WSin films free from powder formation2019

    • Author(s)
      Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SB Pages: SBBA09-SBBA09

    • DOI

      10.7567/1347-4065/ab01d4

    • NAID

      210000135447

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18K13794
  • [Journal Article] Cluster-Preforming-Deposited Si-rich W Silicide: A New Contact Material for Advanced CMOS2019

    • Author(s)
      Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
    • Journal Title

      ECS Transactions

      Volume: 89 Issue: 3 Pages: 155-164

    • DOI

      10.1149/08903.0155ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18K13794
  • [Patent] 導電性積層体及び電子素子2018

    • Inventor(s)
      岡田直也、内田紀行、小川真一、金山敏彦
    • Industrial Property Rights Holder
      産業技術総合研究所
    • Industrial Property Rights Type
      特許
    • Filing Date
      2018
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18K13794
  • [Patent] 半導体装置及びその製造方法2018

    • Inventor(s)
      岡田直也、内田紀行、金山敏彦
    • Industrial Property Rights Holder
      産業技術総合研究所
    • Industrial Property Rights Type
      特許
    • Filing Date
      2018
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18K13794
  • [Presentation] Cu Barrier Properties of Cluster-Preforming-Deposited Amorphous WSin Films Depending on Composition n2019

    • Author(s)
      Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
    • Organizer
      International interconnect technology conference (IEEE-IITC) 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K13794
  • [Presentation] New Contact Material for Advanced CMOS: Cluster-Preforming-Deposited Amorphous Si-rich W Silicide Film2019

    • Author(s)
      Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
    • Organizer
      235th ECS Meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K13794
  • [Presentation] 微細CMOS向け新コンタクト材料:クラスター気相合成法で形成したSiリッチWシリサイド膜2019

    • Author(s)
      岡田 直也
    • Organizer
      Siテクノロジ分科会配線研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-18K13794
  • [Presentation] アモルファスWSin膜の実効仕事関数2019

    • Author(s)
      岡田 直也、内田 紀行、小川 真一、金山 敏彦
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18K13794
  • [Presentation] Cluster-Preforming-Deposited Si-rich W Silicide: A New Contact Material in CMOS for Edge AI Systems2019

    • Author(s)
      Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
    • Organizer
      JST-MOST Joint Workshop
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K13794
  • [Presentation] A New Cobalt Contact Structure Using Amorphous Si-Rich W Silicide Films2019

    • Author(s)
      Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
    • Organizer
      IEEE-IITC
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K13794
  • [Presentation] 微細CMOS向け新コンタクト材料:クラスター気相合成法で形成したWSin (n=12)膜2018

    • Author(s)
      岡田 直也
    • Organizer
      第82回半導体集積回路技術シンポジウム
    • Invited
    • Data Source
      KAKENHI-PROJECT-18K13794
  • [Presentation] クラスター気相合成法で形成したSiリッチWシリサイド薄膜による微細CMOS向けコンタクト形成技術2018

    • Author(s)
      岡田 直也
    • Organizer
      電気学会「次世代化合物半導体デバイスの機能と応用調査専門委員会」
    • Data Source
      KAKENHI-PROJECT-18K13794
  • [Presentation] アモルファスWSinバリア膜とCuの反応性:組成比n依存性2018

    • Author(s)
      岡田 直也、内田 紀行、小川 真一、金山 敏彦
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18K13794
  • [Presentation] Identification of different gas-phase reaction modes of WF6 with SiH4 for deposition of WSin films: powder formation and WSin cluster synthesis2018

    • Author(s)
      Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM) 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K13794
  • 1.  内田 紀行 (60400636)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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