OKADA NAOYA 岡田直也

Researcher Number	10717234
Other IDs	https://orcid.org/0000-0002-0512-8324
Affiliation (Current)	2022: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Affiliation (based on the past Project Information) *help	2018 – 2022: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Basic Section 28020:Nanostructural physics-related
Keywords	Principal Investigator シリサイド / クラスター / 遷移金属内包シリコンクラスター / CVD / トランジスタ / 信頼性 / 拡散 / 金属接合 / 拡散バリア / 半導体 … More / Cu / デバイス / スピン / 遷移金属 / 磁性半導体 Less

単一Ｗ原子を磁性ドーパントとする単結晶Siスピングラスの創出と磁気特性の解明Principal Investigator
- Principal Investigator
  
  岡田直也
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 28020:Nanostructural physics-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Elucidation of Cu diffusion barrier mechanism and control of Cu diffusion coefficient in W-atom-encapsulated Si cage clusters filmPrincipal Investigator
- Principal Investigator
  
  OKADA NAOYA
- Project Period (FY)
  2018 – 2019
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology

All 2019 2018

All Journal Article Presentation Patent

[Journal Article] Gas-phase reactions of WF6 with SiH4 for deposition of WSi n films free from powder formation2019
- Author(s)
  Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: SB Pages: SBBA09-SBBA09
- DOI
  10.7567/1347-4065/ab01d4
- NAID
  210000135447
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K13794
[Journal Article] Cluster-Preforming-Deposited Si-rich W Silicide: A New Contact Material for Advanced CMOS2019
- Author(s)
  Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
- Journal Title
  
  ECS Transactions
  
  Volume: 89 Pages: 155-164
- DOI
  10.1149/08903.0155ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K13794
[Patent] 導電性積層体及び電子素子2018
- Inventor(s)
  岡田直也、内田紀行、小川真一、金山敏彦
- Industrial Property Rights Holder
  産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2018
- Overseas
- Data Source
  KAKENHI-PROJECT-18K13794
[Patent] 半導体装置及びその製造方法2018
- Inventor(s)
  岡田直也、内田紀行、金山敏彦
- Industrial Property Rights Holder
  産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2018
- Overseas
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] Cu Barrier Properties of Cluster-Preforming-Deposited Amorphous WSin Films Depending on Composition n2019
- Author(s)
  Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
- Organizer
  International interconnect technology conference (IEEE-IITC) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] New Contact Material for Advanced CMOS: Cluster-Preforming-Deposited Amorphous Si-rich W Silicide Film2019
- Author(s)
  Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
- Organizer
  235th ECS Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] 微細CMOS向け新コンタクト材料：クラスター気相合成法で形成したSiリッチWシリサイド膜2019
- Author(s)
  岡田直也
- Organizer
  Siテクノロジ分科会配線研究会
- Invited
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] アモルファスWSin膜の実効仕事関数2019
- Author(s)
  岡田直也、内田紀行、小川真一、金山敏彦
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] Cluster-Preforming-Deposited Si-rich W Silicide: A New Contact Material in CMOS for Edge AI Systems2019
- Author(s)
  Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
- Organizer
  JST-MOST Joint Workshop
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] A New Cobalt Contact Structure Using Amorphous Si-Rich W Silicide Films2019
- Author(s)
  Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
- Organizer
  IEEE-IITC
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] 微細CMOS向け新コンタクト材料：クラスター気相合成法で形成したWSin (n=12)膜2018
- Author(s)
  岡田直也
- Organizer
  第８２回半導体集積回路技術シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] クラスター気相合成法で形成したSiリッチWシリサイド薄膜による微細CMOS向けコンタクト形成技術2018
- Author(s)
  岡田直也
- Organizer
  電気学会「次世代化合物半導体デバイスの機能と応用調査専門委員会」
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] アモルファスWSinバリア膜とCuの反応性：組成比n依存性2018
- Author(s)
  岡田直也、内田紀行、小川真一、金山敏彦
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K13794
[Presentation] Identification of different gas-phase reaction modes of WF6 with SiH4 for deposition of WSin films: powder formation and WSin cluster synthesis2018
- Author(s)
  Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, and Toshihiko Kanayama
- Organizer
  International Conference on Solid State Devices and Materials (SSDM) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K13794

1. 内田紀行 (60400636)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

OKADA NAOYA 岡田 直也

Research Projects

Research Products

Co-Researchers

単一Ｗ原子を磁性ドーパントとする単結晶Siスピングラスの創出と磁気特性の解明Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Elucidation of Cu diffusion barrier mechanism and control of Cu diffusion coefficient in W-atom-encapsulated Si cage clusters filmPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Gas-phase reactions of WF6 with SiH4 for deposition of WSi n films free from powder formation2019

Author(s)

Journal Title

DOI

NAID

ISSN

Data Source

[Journal Article] Cluster-Preforming-Deposited Si-rich W Silicide: A New Contact Material for Advanced CMOS2019

Author(s)

Journal Title

DOI

Data Source

[Patent] 導電性積層体及び電子素子2018

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Filing Date

Data Source

[Patent] 半導体装置及びその製造方法2018

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Filing Date

Data Source

[Presentation] Cu Barrier Properties of Cluster-Preforming-Deposited Amorphous WSin Films Depending on Composition n2019

Author(s)

Organizer

Data Source

[Presentation] New Contact Material for Advanced CMOS: Cluster-Preforming-Deposited Amorphous Si-rich W Silicide Film2019

Author(s)

Organizer

Data Source

[Presentation] 微細CMOS向け新コンタクト材料：クラスター気相合成法で形成したSiリッチWシリサイド膜2019

Author(s)

Organizer

Data Source

[Presentation] アモルファスWSin膜の実効仕事関数2019

Author(s)

Organizer

Data Source

[Presentation] Cluster-Preforming-Deposited Si-rich W Silicide: A New Contact Material in CMOS for Edge AI Systems2019

Author(s)

Organizer

Data Source

[Presentation] A New Cobalt Contact Structure Using Amorphous Si-Rich W Silicide Films2019

Author(s)

Organizer

Data Source

[Presentation] 微細CMOS向け新コンタクト材料：クラスター気相合成法で形成したWSin (n=12)膜2018

Author(s)

Organizer

Data Source

[Presentation] クラスター気相合成法で形成したSiリッチWシリサイド薄膜による微細CMOS向けコンタクト形成技術2018

Author(s)

Organizer

Data Source

[Presentation] アモルファスWSinバリア膜とCuの反応性：組成比n依存性2018

Author(s)

Organizer

Data Source

[Presentation] Identification of different gas-phase reaction modes of WF6 with SiH4 for deposition of WSin films: powder formation and WSin cluster synthesis2018

Author(s)

Organizer

Data Source

OKADA NAOYA 岡田直也